JPS5717187A - Manufacture of semiconductor device for detecting light - Google Patents

Manufacture of semiconductor device for detecting light

Info

Publication number
JPS5717187A
JPS5717187A JP9171680A JP9171680A JPS5717187A JP S5717187 A JPS5717187 A JP S5717187A JP 9171680 A JP9171680 A JP 9171680A JP 9171680 A JP9171680 A JP 9171680A JP S5717187 A JPS5717187 A JP S5717187A
Authority
JP
Japan
Prior art keywords
element chip
light
lead frame
semiconductor device
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9171680A
Other languages
Japanese (ja)
Other versions
JPS6222551B2 (en
Inventor
Toshihiko Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9171680A priority Critical patent/JPS5717187A/en
Publication of JPS5717187A publication Critical patent/JPS5717187A/en
Publication of JPS6222551B2 publication Critical patent/JPS6222551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To shorten a process, and to decrease parts by a method wherein an optical conductive band is formed between a light emitting element chip and a light receiving element chip, which are mounted while being opposed to a lead frame, and a light shielding body is shaped. CONSTITUTION:The optical conductive band 14 is formed between the light emitting element chip 12 and the light receiving element chip 13, which are mounted while being opposed to the lead frame 11, and the light shielding body 15 is shaped. For example, the light emitting element chip 12 and the light receiving element chip 13 are mounted and bonded to the lead frame 11, and molded primarily with transparent resin such as epoxy resin and the optical conductive band 14 is formed. The whole is molded secondarily with black epoxy resin, etc., and the light shielding body 15 is shaped. Accordingly, the light detecting semiconductor device can be obtained in the short process and by few parts.
JP9171680A 1980-07-07 1980-07-07 Manufacture of semiconductor device for detecting light Granted JPS5717187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9171680A JPS5717187A (en) 1980-07-07 1980-07-07 Manufacture of semiconductor device for detecting light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9171680A JPS5717187A (en) 1980-07-07 1980-07-07 Manufacture of semiconductor device for detecting light

Publications (2)

Publication Number Publication Date
JPS5717187A true JPS5717187A (en) 1982-01-28
JPS6222551B2 JPS6222551B2 (en) 1987-05-19

Family

ID=14034228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9171680A Granted JPS5717187A (en) 1980-07-07 1980-07-07 Manufacture of semiconductor device for detecting light

Country Status (1)

Country Link
JP (1) JPS5717187A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195882A (en) * 1983-04-20 1984-11-07 Nec Corp Interrupter
JPS6193682A (en) * 1984-10-15 1986-05-12 Sharp Corp Manufacture of photo-interrupter
US5887444A (en) * 1996-11-06 1999-03-30 Mitsubishi Denki Kabushiki Kaisha Accumlator
US7026654B2 (en) * 2002-04-05 2006-04-11 Canon Kabushiki Kaisha Package for optical semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4969095A (en) * 1972-11-08 1974-07-04
JPS5291769U (en) * 1975-12-29 1977-07-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4969095A (en) * 1972-11-08 1974-07-04
JPS5291769U (en) * 1975-12-29 1977-07-08

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195882A (en) * 1983-04-20 1984-11-07 Nec Corp Interrupter
JPS6193682A (en) * 1984-10-15 1986-05-12 Sharp Corp Manufacture of photo-interrupter
JPH0224388B2 (en) * 1984-10-15 1990-05-29 Sharp Kk
US5887444A (en) * 1996-11-06 1999-03-30 Mitsubishi Denki Kabushiki Kaisha Accumlator
US7026654B2 (en) * 2002-04-05 2006-04-11 Canon Kabushiki Kaisha Package for optical semiconductor

Also Published As

Publication number Publication date
JPS6222551B2 (en) 1987-05-19

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