WO2008026851A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- WO2008026851A1 WO2008026851A1 PCT/KR2007/004066 KR2007004066W WO2008026851A1 WO 2008026851 A1 WO2008026851 A1 WO 2008026851A1 KR 2007004066 W KR2007004066 W KR 2007004066W WO 2008026851 A1 WO2008026851 A1 WO 2008026851A1
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- WIPO (PCT)
- Prior art keywords
- light emitting
- light
- phosphor
- emitting diode
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- Prior art date
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000010949 copper Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052748 manganese Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052693 Europium Inorganic materials 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 7
- 229910052772 Samarium Inorganic materials 0.000 claims description 7
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 229910052706 scandium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052701 rubidium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 230000005284 excitation Effects 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000000465 moulding Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 19
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77922—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a light emitting device, and more particularly, to a light emitting device in which an energy conversion efficiency can be improved by using an ultraviolet light emitting diode as an excitation source of a phosphor.
- a light emitting diode refers to a device for emitting light through recombination of minority carriers (electrons or holes) as a compound semiconductor having p-n junction structure. Since the light emitting diode has characteristics of low power consumption, long lifespan, installability in a narrow space, and strong resistance against vibration, the light emitting diode has been increasingly used as various illumination devices as well as parts of various information processing and communication applications and has been manufactured as various light emitting devices which are suitable to various applications. In recent years, white light emitting diodes in addition to single color light emitting devices, such as red, blue or green light emitting devices, have been placed on the market. As the white light emitting devices are applied to products for automobiles and illumination, it is expected that their demands will be rapidly increased.
- a yellow phosphor is arranged over a blue light emitting diode, so that blue light emitted from the blue light emitting diode and yellow light emitted from the phosphor which is excited by a portion of the blue light are color-mixed to implement white color.
- phosphors which are excited by ultraviolet ray to emit blue, green and red lights, respectively, are arranged over a light emitting diode for emitting ultraviolet ray.
- the red phosphor which is generally commercialized is sulfide based phosphor.
- the light emitting device easily reacts with water vapor and carbon dioxide in the atmosphere during its operation and therefore the chemical characteristics of the phosphor is distorted. Since the byproduct of such a reaction, H S gas, corrodes metal such as electrodes within the light emitting device, there is a problem in that the reliability of the light emitting diode may be reduced.
- the present invention is conceived to solve the aforementioned problem.
- An object of the present invention is to provide a white light emitting device in which energy conversion efficiency can be improved by effectively using ultraviolet light as an excitation source of phosphors.
- Another object of the present invention is to provide a white light emitting device in which a light emitting diode for emitting light different in wavelength from light ex- citatively emitted from a phosphor can be used to improve reliability against vapor and carbon dioxide to which the light emitting device may be easily exposed.
- a light emitting device comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor.
- the phosphor may be at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor, and contains copper, and the phosphor may further contain lead.
- the phosphor may include at least any one of a first phosphor having its peak wavelength positioned in a range of 410 nm to 500 nm and a second phosphor having its peak wavelength position in a range of 500 nm to 590 nm.
- the phosphor may include a silicate based phosphor represented by Chemical
- M is atf o) • b(M ⁇ 0) • c(M m A) ⁇ d ⁇ o) • e(i 2 Q 3 ) • f(M V 0 O p ) • g(SiO 2 ) • hOUU [15]
- M is at least one element selected from the group containing Cu and Pb;
- M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn,
- M »111 is at least one element selected from the group consisting of Li, Na, K,
- A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 ⁇ a ⁇ 2, 0 ⁇ b ⁇ 8, 0 ⁇ c ⁇ 4, 0 ⁇ d ⁇ 2, 0 ⁇ e ⁇ 2, 0 ⁇ f ⁇ 2, 0 ⁇ g ⁇ 10, 0 ⁇ h ⁇ 5, l ⁇
- the phosphor may include a germanate and/or germanate-silicate based phosphor represented by Chemical Formula 2:
- M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and
- M »111 is at least one element selected from the group consisting of Be, Mg, Ca, Sr,
- M / rIV is at least one element selected from the group consisting of
- M * -v is one or more elements selected from the group consisting of Si, Ti, Zr, Mn, V, Nd, Ta, W and Mo;
- M / rVI is at least one element selected from the group consisting of Bi, Sn, Pr, Sm, Eu, Gd, Dy and Tb;
- A is at least one element selected from the group consisting of F, Cl, Br and I;
- a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 ⁇ a ⁇ 2, 0 ⁇ b ⁇ 2, 0 ⁇ c ⁇ 10, 0 ⁇ d ⁇ 10, 0 ⁇ e ⁇ 14, 0 ⁇ f ⁇ 14, 0 ⁇ g ⁇ 10, 0 ⁇ h ⁇ 2, 1 ⁇ o ⁇ 2, 1 ⁇ p ⁇ 5, 1 ⁇ x ⁇ 2, and 1 ⁇ y
- the second light emitting diode may include a light emitting diode for emitting light having a wavelength longer than the peak wavelength of the light emitted from the phosphor.
- the second light emitting diode may include a light emitting diode for emitting light in a wavelength range of 590 nm to 720 nm.
- the second light emitting diode may further include a light emitting diode for emitting light in a wavelength range of 420 nm to 480 nm which is shorter than the peak wavelength of the light emitted from the phosphor.
- a white light emitting device can be provided in which energy conversion efficiency can be improved by effectively using an ultraviolet light emitting diode as an excitation source of a phosphor.
- a light emitting diode for emitting light different in wavelength from light excitatively emitted from a phosphor can be used to improve reliability against vapor and carbon dioxide to which the light emitting device may be easily exposed.
- FIG. 1 is a sectional view showing a first embodiment of a light emitting device according to the present invention.
- FIG. 2 is a sectional view showing a second embodiment of the light emitting device according to the present invention.
- FIG. 3 is a sectional view showing a third embodiment of the light emitting device according to the present invention.
- FIG. 4 is a sectional view showing a fourth embodiment of the light emitting device according to the present invention.
- FIG. 5 is a sectional view showing a fifth embodiment of the light emitting device according to the present invention.
- a light emitting device of the present invention comprises a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor, thereby implementing white light emission.
- the light emitting device can be configured in the combination of a first light emitting diode for emitting ultraviolet ray in a wavelength range of 250 nm to 410 nm, a first phosphor for emitting blue light in a peak wavelength range of 410 nm to 500 nm, at least one second phosphor for emitting green and yellow lights in a peak wavelength range of 500 nm to 590 nm, and a second light emitting diode for emitting red light in a wavelength range of 590 nm to 720 nm.
- the light emitting device can be configured in the combination of a first light emitting diode for emitting light in a wavelength range of 250 nm to 350 nm, a first phosphor for emitting blue light in a peak wavelength range of 440 nm to 480 nm, a second phosphor for emitting green light in a peak wavelength range of 510 nm to 545 nm; and a second light emitting diode for emitting red light in a wavelength range of 620 nm to 660 nm.
- the phosphor excited by the light having the ultraviolet wavelength includes at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor, which contain copper, and may include a phosphor which further contains lead.
- the phosphor may be a silicate based phosphor which is represented by Chemical
- M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M m is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M v is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o,
- the phosphor may be a germanate and/or germanate-silicate phosphor which is represented by Chemical Formula of chemistry figure 2:
- M 1 is at least one element selected from the group containing Cu and Pb
- M 11 is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag
- M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn
- M is at least one element selected from the group consisting of Sc, Y, B, Al, Ga, In and La
- M is one or more elements selected from the group consisting of Si, Ti, Zr, Mn, V, Nd, Ta, W and Mo
- M VI is at least one element selected from the group consisting of Bi, Sn, Pr, Sm, Eu, Gd, Dy and Tb
- A is at least one element selected from the group consisting of F, Cl, Br and I
- a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 ⁇ a
- the silicate based phosphor is represented by Chemical Formula 3:
- B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
- x is set in a range of 0 to 1; and Eu and B are set in ranges of 0 to 0.2, respectively.
- the phosphor represented by Chemical Formula 4 emits light having a wavelength of 557 nm
- the phosphor represented by Chemical Formula 5 emits light having a wavelength of 467 nm
- the phosphor represented by Chemical Formula 6 emits light having a wavelength of 563 nm.
- the orthosilicate based phosphor can control its wavelength of emission light depending on its elements and compositions.
- the light emitting device comprises a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light with a peak wavelength which is longer than the wavelength of the light emitted from the first light emitting diode, i.e., at least one phosphor for emitting blue, green and yellow lights; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor, i.e., a red light emitting diode, thereby implementing the white light emission.
- a red light emitting diode is used on behalf of the red phosphor which has a lower conversion efficiency and is excited by energy of light in an ultraviolet wavelength region as the excitation light source, thereby improving energy conversion efficiency of the white light emitting device.
- the phosphor for emitting a smaller amount of blue and green lights is used to implement white light with the same intensity, thereby reducing its manufacturing costs.
- the red light emitting diode is used to solve the problem that the generally commercialized sulfide based red phosphor easily reacts with vapor and carbon dioxide in the atmosphere and the optical characteristics is thus reduced.
- Fig. 1 is a sectional view showing a first embodiment of the light emitting device according to the present invention.
- the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10.
- a light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92, which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light, are arranged over the first light emitting diode 50.
- a second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92.
- the first and second light emitting diodes 50 and 60 are commonly and electrically connected to a third electrode (not shown) through wires 100.
- a molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 is provided on the substrate 10, and the first phosphor 91 for emitting blue light and the second phosphor 92 for emitting green light as described above are included in the molding portion 80.
- the substrate 10 may be formed with a predetermined groove around the central region of the substrate 10 through a mechanical processing, and the groove may include a reflection portion (not shown) formed in such a manner that a sidewall surface thereof is inclined at a predetermined slope.
- the first and second light emitting diodes 50 and 60 are mounted on a floor surface of the reflection portion, so that the light emitted from the light emitting diode 20 can be maximally reflected to thereby increase its luminous efficiency.
- the molding portion 80 may be formed through an injection molding process using a mixture of a predetermined transparent epoxy or silicon resin and the aforementioned phosphors 91 and 92. Alternatively, the molding portion 80 may be formed in such a manner that it is manufactured using a separate mold and then pressurized or heat treated. The molding portion 80 may be formed into various shapes such as a convex lens shape, a flat plate shape, and a shape having a predetermined concavo-convex surface.
- At least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor may be used as the first and second phosphors 91 and 92 which are included within the molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 on the substrate 10.
- the phosphors 91 and 92 are uniformly distributed within the molding portion 80 as shown in the drawing, which causes the red light emitted from the second light emitting diode 60 and the blue and green lights emitted from the phosphors 91 and 92 to be uniformly mixed with each other, thereby implementing more uniform white light.
- a phosphor (not shown) for emitting yellow light may be further included within the molding portion 80.
- an excitation light i.e., light in the ultraviolet region is emitted from the light emitting diode 50 and causes the phosphors 91 and 92 to be excited and emit excitation-emitted lights, and another light which is different from the excitation-emitted lights is emitted from the second light emitting diode 60, so that the excitation light, the excitation-emitted lights and the other light may be color-mixed to implement colors in a required spectrum range.
- ultraviolet ray and red light are respectively emitted from the ultraviolet and red light emitting diodes 50 and 60, and the ultraviolet ray allows the first and second phosphors 91 and 92 to emit blue and green lights, respectively, so that the color mixing thereof implements white light emission.
- the red light emitting diode is used to improve an energy conversion efficiency of the white light emitting device on behalf of the red phosphor with a lower conversion efficiency in which the red phosphor is excited by a light energy of the excitation light source.
- the phosphors for emitting a smaller amount of blue and green lights are used to implement white light with the same intensity, thereby reducing its manufacturing costs.
- the red light emitting diode is used to solve the problem that the generally commercialized sulfide based red phosphor easily reacts with vapor and carbon dioxide in the atmosphere to reduce the optical characteristics
- FIG. 2 is a sectional view showing a second embodiment of the light emitting device according to the present invention.
- the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10.
- a light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
- a second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92.
- a molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 is provided on the substrate 10, and the first phosphor 91 for emitting blue light, the second phosphor 92 for emitting green light and a scattering material 70 is contained within the molding portion 80.
- the first and second electrodes 20 and 30 are formed on the substrate 10, and the first and second light emitting diodes 50 and 60 are mounted on the first and second electrodes 20 and 30, respectively. Unlike the first embodiment, the first and second light emitting diodes 50 and 60 may be independently connected to third and fourth electrodes (not shown) through wires 100, respectively.
- the first and second phosphors 91 and 92 and the scattering material 70 which are uniformly distributed are included in the molding portion 80.
- the first and second phosphor 91 and 92 are the first phosphor 91 for emitting blue light and the second phosphor for emitting green light, both of which are excited by the ultraviolet ray used as the excitation source as described above, and at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor may be used as the first and second phosphors 91 and 92.
- the scattering material 70 is added to further facilitate the color mixing of the lights, and particles whose dimension ranges from 0.1 to 20 m are used as the scattering ° material 70. At least any one of SiO 2 , Al 2 O 3 , TiO 2 , Y 2O 3, CaCO 3 and Mg°O may be used as the scattering material 70.
- the light emitting device which includes the scattering material 70 may scatter light emitted from the light emitting diodes 50 and 60 by the scattering material and the other lights from the phosphors 91 and 92, so that an unnecessary light emission pattern may not be formed and the light may be uniformly emitted in a larger area. Accordingly, the lights having wavelengths different from each other are emitted in a larger area to be uniformly mixed with each other, so that the light emitting device can implement the uniform white light.
- Fig. 3 is a sectional view showing a third embodiment of the light emitting device according to the present invention.
- the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10.
- a light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
- a second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92. This is mostly identical with the constitutional features of the first embodiment, and therefore, the overlapping specific descriptions will be omitted.
- the light emitting device includes a first molding portion 81 for encapsulating the first and second light emitting diodes 50 and 60 on the substrate 10, and a second molding portion 82 for covering the first molding portion 81, wherein the first molding portion 81 may be formed of silicon resin having a hardness lower than that of the second molding portion 82. Accordingly, thermal stress applied to the first and second light emitting diodes 50 and 60 and the wires 100 can be reduced.
- the second molding portion 82 may be formed of epoxy resin having relatively high hardness.
- the second phosphor 92 for emitting green light is contained in the first molding portion 81 while the first phosphor 91 for emitting blue light is contained in the second molding portion 82, so that light loss generated due to the re- absorption of the blue light, emitted from the first phosphor 91, into the second phosphor can be prevented.
- FIG. 4 is a sectional view showing a fourth embodiment of the light emitting device according to the present invention.
- the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10.
- a light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
- a second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92. This is mostly identical with the constitutional features of the third embodiment, and therefore, the overlapping specific descriptions will be omitted.
- the light emitting device comprises a first molding portion 81, which includes the first and second phosphors 91 and 92 and covers the first light emitting diode 50 for emitting ultraviolet ray, and a second molding portion 82 for encapsulating the first molding portion 81 and the second light emitting diode 60.
- Fig. 5 is a sectional view showing a fifth embodiment of the light emitting device according to the present invention.
- the light emitting device comprises a substrate 10 and first, second and third electrodes 20, 30 and 40 formed on the substrate 10.
- a light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
- This is mostly identical with the constitutional features of the fourth embodiment, and therefore, the overlapping specific descriptions will be omitted.
- Second light emitting diodes 61 and 62 for emitting blue and red lights are mounted on the second and third electrodes 30 and 40, respectively, wherein the wavelengths of the blue and red lights are different from that of the light emitted from the phosphor 90.
- the light emitting diode whose full width at half maximum (FWHM) is narrow is used to implement a light emitting device with an excellent color reproduction which is significantly required to be used as a back light source for a liquid crystal display (LCD).
- FWHM full width at half maximum
- the present invention is not limited thereto, but the molding portion 80 which includes the phosphor 90 for emitting green light according to this embodiment is formed to cover the second light emitting diode 61 for emitting blue light as well as the first light emitting diode 50 for emitting ultraviolet ray. Accordingly, since the phosphor 90 can emit light by the blue light as well as the ultraviolet ray, the excitation power can be enhanced, thereby increasing green light emitted from the phosphor. [98] As such, the present invention can be adapted to products with various configurations, and the technical features of the present invention are not limited to the aforementioned embodiments but can be variously modified and adjusted.
- a first molding portion which contains a phosphor to cover the ultraviolet light emitting diode is formed and a second molding portion for encompassing the ultraviolet and red light emitting diodes and one end of the lead terminal is formed, in the similar manner as described above, thereby manufacturing the light emitting device according to the present invention.
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Abstract
The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex- cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.
Description
Description LIGHT EMITTING DEVICE
Technical Field
[1] The present invention relates to a light emitting device, and more particularly, to a light emitting device in which an energy conversion efficiency can be improved by using an ultraviolet light emitting diode as an excitation source of a phosphor. Background Art
[2] A light emitting diode (LED) refers to a device for emitting light through recombination of minority carriers (electrons or holes) as a compound semiconductor having p-n junction structure. Since the light emitting diode has characteristics of low power consumption, long lifespan, installability in a narrow space, and strong resistance against vibration, the light emitting diode has been increasingly used as various illumination devices as well as parts of various information processing and communication applications and has been manufactured as various light emitting devices which are suitable to various applications. In recent years, white light emitting diodes in addition to single color light emitting devices, such as red, blue or green light emitting devices, have been placed on the market. As the white light emitting devices are applied to products for automobiles and illumination, it is expected that their demands will be rapidly increased.
[3] In a representative method of implementing a white light emitting device, a yellow phosphor is arranged over a blue light emitting diode, so that blue light emitted from the blue light emitting diode and yellow light emitted from the phosphor which is excited by a portion of the blue light are color-mixed to implement white color. Although such a method of implementing white light provides a simple configuration and an excellent mass-producibility, there is a problem in that the shortages of green and red spectra may reduce color rendering.
[4] In another representative method of implementing a white light emitting device, phosphors, which are excited by ultraviolet ray to emit blue, green and red lights, respectively, are arranged over a light emitting diode for emitting ultraviolet ray.
[5] Since such a method uses ultraviolet ray, which is a higher excitation light source than blue light, to emit light having wavelengths from blue to red regions, there is an advantage in that the color rendering is higher. However, various phosphors, such as blue, green and red phosphors, are used, thereby increasing manufacturing costs.
[6] Specifically, the red phosphor which is generally commercialized is sulfide based phosphor. In this case, there is a problem in that the light emitting device easily reacts with water vapor and carbon dioxide in the atmosphere during its operation and
therefore the chemical characteristics of the phosphor is distorted. Since the byproduct of such a reaction, H S gas, corrodes metal such as electrodes within the light emitting device, there is a problem in that the reliability of the light emitting diode may be reduced.
[7] Further, there is another problem in that the red phosphor has a lower conversion efficiency for the light emitted under the excitation by the excitation energy than blue and green phosphors. Disclosure of Invention Technical Problem
[8] The present invention is conceived to solve the aforementioned problem. An object of the present invention is to provide a white light emitting device in which energy conversion efficiency can be improved by effectively using ultraviolet light as an excitation source of phosphors.
[9] Another object of the present invention is to provide a white light emitting device in which a light emitting diode for emitting light different in wavelength from light ex- citatively emitted from a phosphor can be used to improve reliability against vapor and carbon dioxide to which the light emitting device may be easily exposed. Technical Solution
[10] According to the present invention for achieving the objects, there is provided a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor.
[11] The phosphor may be at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor, and contains copper, and the phosphor may further contain lead.
[12] The phosphor may include at least any one of a first phosphor having its peak wavelength positioned in a range of 410 nm to 500 nm and a second phosphor having its peak wavelength position in a range of 500 nm to 590 nm.
[13] The phosphor may include a silicate based phosphor represented by Chemical
Formula 1:
[14]
atf o) • b(Mπ0) • c(MmA) ■ dΛo) • e(i2Q3) • f(MV 0Op) • g(SiO2) • hOUU
[15] where M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn,
Cd and Mn; M »111 is at least one element selected from the group consisting of Li, Na, K,
Rb, Cs, Au and Ag; M /rlV is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; MVI is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a<2, 0 < b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[16] The phosphor may include a germanate and/or germanate-silicate based phosphor represented by Chemical Formula 2:
[17] i π π i iv v Yi a(M O)b(M 20)c(M A)dGeO2e(M O)f(M 203)g(M 0Op)h(M xwv
[18] where M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and
Ag; M »111 is at least one element selected from the group consisting of Be, Mg, Ca, Sr,
Ba, Zn, Cd and Mn; M /rIV is at least one element selected from the group consisting of
Sc, Y, B, Al, Ga, In and La; M *-v is one or more elements selected from the group consisting of Si, Ti, Zr, Mn, V, Nd, Ta, W and Mo; M /rVI is at least one element selected from the group consisting of Bi, Sn, Pr, Sm, Eu, Gd, Dy and Tb; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a < 2, 0 < b < 2, 0 < c < 10, 0 < d < 10, 0 < e < 14, 0 < f < 14, 0 < g < 10, 0 < h < 2, 1 < o < 2, 1 < p < 5, 1 < x < 2, and 1 < y < 5.
[19] The second light emitting diode may include a light emitting diode for emitting light having a wavelength longer than the peak wavelength of the light emitted from the phosphor.
[20] The second light emitting diode may include a light emitting diode for emitting light in a wavelength range of 590 nm to 720 nm.
[21] The second light emitting diode may further include a light emitting diode for emitting light in a wavelength range of 420 nm to 480 nm which is shorter than the peak wavelength of the light emitted from the phosphor.
Advantageous Effects
[22] According to the present invention, a white light emitting device can be provided in which energy conversion efficiency can be improved by effectively using an ultraviolet light emitting diode as an excitation source of a phosphor.
[23] Further, a light emitting diode for emitting light different in wavelength from light excitatively emitted from a phosphor can be used to improve reliability against vapor and carbon dioxide to which the light emitting device may be easily exposed. Brief Description of the Drawings
[24] Fig. 1 is a sectional view showing a first embodiment of a light emitting device according to the present invention.
[25] Fig. 2 is a sectional view showing a second embodiment of the light emitting device according to the present invention.
[26] Fig. 3 is a sectional view showing a third embodiment of the light emitting device according to the present invention.
[27] Fig. 4 is a sectional view showing a fourth embodiment of the light emitting device according to the present invention.
[28] Fig. 5 is a sectional view showing a fifth embodiment of the light emitting device according to the present invention.
[29] [Explanation of Reference Numerals for Major Portions Shown in Drawings]
[30] 10: Substrate 20, 30, 40: Electrode
[31] 50: First light emitting diode 60: Second light emitting diode
[32] 70: Scattering material 80: Molding portion
[33] 90: Phosphor 100: Wire
Best Mode for Carrying Out the Invention
[34] Hereinafter, a light emitting device according to the present invention will be described in detail with reference to the accompanying drawings.
[35] However, the present invention is not limited to a preferred embodiment set forth herein but can be implemented in various forms. In addition, the embodiments are merely provided to allow the present invention to be completely described herein and to fully convey the scope of the invention to those skilled in the art. Throughout the drawings, like reference numerals are used to designate like elements.
[36] A light emitting device of the present invention comprises a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor, thereby implementing white light emission.
[37] That is, the light emitting device can be configured in the combination of a first light emitting diode for emitting ultraviolet ray in a wavelength range of 250 nm to 410
nm, a first phosphor for emitting blue light in a peak wavelength range of 410 nm to 500 nm, at least one second phosphor for emitting green and yellow lights in a peak wavelength range of 500 nm to 590 nm, and a second light emitting diode for emitting red light in a wavelength range of 590 nm to 720 nm.
[38] More preferably, the light emitting device can be configured in the combination of a first light emitting diode for emitting light in a wavelength range of 250 nm to 350 nm, a first phosphor for emitting blue light in a peak wavelength range of 440 nm to 480 nm, a second phosphor for emitting green light in a peak wavelength range of 510 nm to 545 nm; and a second light emitting diode for emitting red light in a wavelength range of 620 nm to 660 nm.
[39] The phosphor excited by the light having the ultraviolet wavelength includes at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor, which contain copper, and may include a phosphor which further contains lead.
[40] The phosphor may be a silicate based phosphor which is represented by Chemical
Formula of chemistry figure 1 :
[41] Chemistry Figure 1
aOlO) ■ b(Mπ0) • c(MmA) ■ cKM^O) • e (If2O3) • f (MV 0Op) • g(SiO2) • h(M^A)
[42] where M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; Mm is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; Mv is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a<2, 0 < b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[43] The phosphor may be a germanate and/or germanate-silicate phosphor which is represented by Chemical Formula of chemistry figure 2:
[44] ChemistryFigure 2
a(MI 0)b(Mn 20)c(MnA)dGe02e(Mm0)f (Mn'203)g(MV o0p)h(M;'I x0y)
[45] where M1 is at least one element selected from the group containing Cu and Pb; M11 is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of
Sc, Y, B, Al, Ga, In and La; M is one or more elements selected from the group consisting of Si, Ti, Zr, Mn, V, Nd, Ta, W and Mo; MVI is at least one element selected from the group consisting of Bi, Sn, Pr, Sm, Eu, Gd, Dy and Tb; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a < 2, 0 < b < 2, 0 < c < 10, 0 < d < 10, 0 < e < 14, 0 < f < 14, 0 < g < 10, 0 < h < 2, 1 < o < 2, 1 < p < 5, 1 < x < 2, and 1 < y < 5.
[46] Preferably, the silicate based phosphor is represented by Chemical Formula 3:
[47] Chemistry Figure 3
( (Ba- Sr 1Ca1Mg)1-X(Pb 1Cu)J2SiO4 = Eu1B
[48] where B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Mn; x is set in a range of 0 to 1; and Eu and B are set in ranges of 0 to 0.2, respectively.
[49] ChemistryFigure 4
Cu0.05L i o . oo2Sr 1.5Ba0.44sS i O4 : Gd, Eu
[50] ChemistryFigure 5
Cuo .2Ba2Zno .2Mgo .6 S i 2O7 : Eu [51] ChemistryFigure 6
Cuo.02Sro.38Bao.90Cao.6Sio.98Geo.02O4 • Euo.i
[52] The phosphor represented by Chemical Formula 4 emits light having a wavelength of 557 nm, the phosphor represented by Chemical Formula 5 emits light having a wavelength of 467 nm, and the phosphor represented by Chemical Formula 6 emits light having a wavelength of 563 nm. As such, the orthosilicate based phosphor can control its wavelength of emission light depending on its elements and compositions.
[53] As such, the light emitting device according to the present invention comprises a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light with a peak wavelength which is longer than the wavelength of the light emitted from the first light emitting diode, i.e., at least one phosphor for emitting blue, green and yellow lights; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor, i.e., a red light emitting diode, thereby implementing the white light emission.
[54] Accordingly, as compared with a conventional light emitting device which includes an ultraviolet light emitting diode and phosphors for emitting blue, green and red lights, a red light emitting diode is used on behalf of the red phosphor which has a
lower conversion efficiency and is excited by energy of light in an ultraviolet wavelength region as the excitation light source, thereby improving energy conversion efficiency of the white light emitting device.
[55] Further, in comparison with the prior art, the phosphor for emitting a smaller amount of blue and green lights is used to implement white light with the same intensity, thereby reducing its manufacturing costs.
[56] Also, the red light emitting diode is used to solve the problem that the generally commercialized sulfide based red phosphor easily reacts with vapor and carbon dioxide in the atmosphere and the optical characteristics is thus reduced.
[57] Hereinafter, the light emitting device in which the aforementioned phosphors are used according to the present invention will be described with reference to the accompanying drawings.
[58] Fig. 1 is a sectional view showing a first embodiment of the light emitting device according to the present invention.
[59] Referring to the figure, the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10. A light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92, which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light, are arranged over the first light emitting diode 50.
[60] A second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92.
[61] The first and second light emitting diodes 50 and 60 are commonly and electrically connected to a third electrode (not shown) through wires 100.
[62] A molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 is provided on the substrate 10, and the first phosphor 91 for emitting blue light and the second phosphor 92 for emitting green light as described above are included in the molding portion 80.
[63] The substrate 10 may be formed with a predetermined groove around the central region of the substrate 10 through a mechanical processing, and the groove may include a reflection portion (not shown) formed in such a manner that a sidewall surface thereof is inclined at a predetermined slope.
[64] The first and second light emitting diodes 50 and 60 are mounted on a floor surface of the reflection portion, so that the light emitted from the light emitting diode 20 can be maximally reflected to thereby increase its luminous efficiency.
[65] The molding portion 80 may be formed through an injection molding process using a mixture of a predetermined transparent epoxy or silicon resin and the aforementioned
phosphors 91 and 92. Alternatively, the molding portion 80 may be formed in such a manner that it is manufactured using a separate mold and then pressurized or heat treated. The molding portion 80 may be formed into various shapes such as a convex lens shape, a flat plate shape, and a shape having a predetermined concavo-convex surface.
[66] At least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor may be used as the first and second phosphors 91 and 92 which are included within the molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 on the substrate 10.
[67] It is preferable that the phosphors 91 and 92 are uniformly distributed within the molding portion 80 as shown in the drawing, which causes the red light emitted from the second light emitting diode 60 and the blue and green lights emitted from the phosphors 91 and 92 to be uniformly mixed with each other, thereby implementing more uniform white light. In order to improve the color rendering, a phosphor (not shown) for emitting yellow light may be further included within the molding portion 80.
[68] In such a light emitting device according to the present invention, an excitation light, i.e., light in the ultraviolet region is emitted from the light emitting diode 50 and causes the phosphors 91 and 92 to be excited and emit excitation-emitted lights, and another light which is different from the excitation-emitted lights is emitted from the second light emitting diode 60, so that the excitation light, the excitation-emitted lights and the other light may be color-mixed to implement colors in a required spectrum range.
[69] That is, ultraviolet ray and red light are respectively emitted from the ultraviolet and red light emitting diodes 50 and 60, and the ultraviolet ray allows the first and second phosphors 91 and 92 to emit blue and green lights, respectively, so that the color mixing thereof implements white light emission.
[70] Accordingly, the red light emitting diode is used to improve an energy conversion efficiency of the white light emitting device on behalf of the red phosphor with a lower conversion efficiency in which the red phosphor is excited by a light energy of the excitation light source.
[71] Further, using an ultraviolet light emitting diode with high energy as compared with a blue light emitting diode having been used as the conventional excitation light source, the phosphors for emitting a smaller amount of blue and green lights are used to implement white light with the same intensity, thereby reducing its manufacturing costs.
[72] Also, the red light emitting diode is used to solve the problem that the generally commercialized sulfide based red phosphor easily reacts with vapor and carbon
dioxide in the atmosphere to reduce the optical characteristics
[73] Fig. 2 is a sectional view showing a second embodiment of the light emitting device according to the present invention.
[74] Referring to this figure, the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10. A light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
[75] A second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92.
[76] A molding portion 80 for encapsulating the first and second light emitting diodes 50 and 60 is provided on the substrate 10, and the first phosphor 91 for emitting blue light, the second phosphor 92 for emitting green light and a scattering material 70 is contained within the molding portion 80.
[77] This is mostly identical with the constitutional features of the first embodiment, and therefore, the overlapping specific descriptions will be omitted.
[78] The first and second electrodes 20 and 30 are formed on the substrate 10, and the first and second light emitting diodes 50 and 60 are mounted on the first and second electrodes 20 and 30, respectively. Unlike the first embodiment, the first and second light emitting diodes 50 and 60 may be independently connected to third and fourth electrodes (not shown) through wires 100, respectively.
[79] The molding portion 80 for encapsulating the first and second light emitting diodes
50 and 60 is formed on the substrate 10. The first and second phosphors 91 and 92 and the scattering material 70 which are uniformly distributed are included in the molding portion 80.
[80] The first and second phosphor 91 and 92 are the first phosphor 91 for emitting blue light and the second phosphor for emitting green light, both of which are excited by the ultraviolet ray used as the excitation source as described above, and at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor may be used as the first and second phosphors 91 and 92.
[81] The scattering material 70 is added to further facilitate the color mixing of the lights, and particles whose dimension ranges from 0.1 to 20 m are used as the scattering ° material 70. At least any one of SiO 2 , Al 2 O 3 , TiO 2 , Y 2O 3, CaCO 3 and Mg°O may be used as the scattering material 70.
[82] The light emitting device which includes the scattering material 70 may scatter light emitted from the light emitting diodes 50 and 60 by the scattering material and the
other lights from the phosphors 91 and 92, so that an unnecessary light emission pattern may not be formed and the light may be uniformly emitted in a larger area. Accordingly, the lights having wavelengths different from each other are emitted in a larger area to be uniformly mixed with each other, so that the light emitting device can implement the uniform white light.
[83] Fig. 3 is a sectional view showing a third embodiment of the light emitting device according to the present invention.
[84] Referring to this figure, the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10.
[85] A light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50.
[86] A second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92. This is mostly identical with the constitutional features of the first embodiment, and therefore, the overlapping specific descriptions will be omitted.
[87] The light emitting device according to the this embodiment includes a first molding portion 81 for encapsulating the first and second light emitting diodes 50 and 60 on the substrate 10, and a second molding portion 82 for covering the first molding portion 81, wherein the first molding portion 81 may be formed of silicon resin having a hardness lower than that of the second molding portion 82. Accordingly, thermal stress applied to the first and second light emitting diodes 50 and 60 and the wires 100 can be reduced. In order to prevent the first molding portion 81 from being deformed by external force or the like, the second molding portion 82 may be formed of epoxy resin having relatively high hardness.
[88] In this embodiment, the second phosphor 92 for emitting green light is contained in the first molding portion 81 while the first phosphor 91 for emitting blue light is contained in the second molding portion 82, so that light loss generated due to the re- absorption of the blue light, emitted from the first phosphor 91, into the second phosphor can be prevented.
[89] Fig. 4 is a sectional view showing a fourth embodiment of the light emitting device according to the present invention.
[90] Referring to the figure, the light emitting device comprises a substrate 10 and first and second electrodes 20 and 30 formed on the substrate 10. A light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 which are excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are
arranged over the first light emitting diode 50.
[91] A second light emitting diode 60 is mounted on the second electrode 30, and emits red light different in wavelength from lights emitted from the first and second phosphors 91 and 92. This is mostly identical with the constitutional features of the third embodiment, and therefore, the overlapping specific descriptions will be omitted.
[92] The light emitting device according to this embodiment comprises a first molding portion 81, which includes the first and second phosphors 91 and 92 and covers the first light emitting diode 50 for emitting ultraviolet ray, and a second molding portion 82 for encapsulating the first molding portion 81 and the second light emitting diode 60.
[93] Accordingly, it is possible to prevent light loss in which the red light emitted from the second light emitting diode 60 is not emitted to the outside of the first and second molding portions 81 and 82 but disappears due to the first and second phosphor 91 and 92.
[94] Fig. 5 is a sectional view showing a fifth embodiment of the light emitting device according to the present invention.
[95] Referring to this figure, the light emitting device comprises a substrate 10 and first, second and third electrodes 20, 30 and 40 formed on the substrate 10. A light emitting diode 50 for emitting ultraviolet ray is mounted on the first electrode 20, and first and second phosphors 91 and 92 excited by the ultraviolet ray to emit blue and green lights having peak wavelengths longer than the wavelength of the excitation light are arranged over the first light emitting diode 50. This is mostly identical with the constitutional features of the fourth embodiment, and therefore, the overlapping specific descriptions will be omitted.
[96] Second light emitting diodes 61 and 62 for emitting blue and red lights are mounted on the second and third electrodes 30 and 40, respectively, wherein the wavelengths of the blue and red lights are different from that of the light emitted from the phosphor 90. As such, unlike the embodiment in which the phosphor is used as the blue light source, the light emitting diode whose full width at half maximum (FWHM) is narrow is used to implement a light emitting device with an excellent color reproduction which is significantly required to be used as a back light source for a liquid crystal display (LCD).
[97] Of course, the present invention is not limited thereto, but the molding portion 80 which includes the phosphor 90 for emitting green light according to this embodiment is formed to cover the second light emitting diode 61 for emitting blue light as well as the first light emitting diode 50 for emitting ultraviolet ray. Accordingly, since the phosphor 90 can emit light by the blue light as well as the ultraviolet ray, the excitation power can be enhanced, thereby increasing green light emitted from the phosphor.
[98] As such, the present invention can be adapted to products with various configurations, and the technical features of the present invention are not limited to the aforementioned embodiments but can be variously modified and adjusted.
[99] For example, in case of a lamp-type light emitting device with lead terminals, after ultraviolet and red light emitting diodes are mounted on one lead terminal, a first molding portion which contains a phosphor to cover the ultraviolet light emitting diode is formed and a second molding portion for encompassing the ultraviolet and red light emitting diodes and one end of the lead terminal is formed, in the similar manner as described above, thereby manufacturing the light emitting device according to the present invention.
[100] Further, although a single blue light emitting diode chip and a single red light emitting diode chip are used in the above embodiments, a plurality of chips may be used, if necessary.
Claims
[1] A light emitting device, comprising: a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor.
[2] The light emitting device as claimed in claim 1, wherein the phosphor is at least any one of silicate based phosphor, germanate based phosphor and germanate- silicate based phosphor, and contains copper.
[3] The light emitting device as claimed in claim 2, wherein the phosphor further contains lead.
[4] The light emitting device as claimed in claim 1, wherein the phosphor includes at least any one of a first phosphor having its peak wavelength positioned in a range of 410 nm to 500 nm and a second phosphor having its peak wavelength position in a range of 500 nm to 590 nm.
[5] The light emitting device as claimed in any one of claims 1 to 4, wherein the phosphor includes a silicate based phosphor represented by Chemical Formula 1 :
a(M! 0) • b(MEO) • c(Λ) •
• g(SiO2) •
where M is at least one element selected from the group containing Cu and Pb; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a<2, 0 < b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[6] The light emitting device as claimed in any one of claims 1 to 4, wherein the phosphor includes a germanate and/or germanate-silicate based phosphor represented by Chemical Formula 2:
a(MI 0)b(Mπ 20)c(MπA)dGe02e(MπiO)f (MIV 2θ3)g(MV 0Op)h(MV1 χOy)
where M is at least one element selected from the group containing Cu and Pb; Mπ is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; Mff is at least one element selected from the group consisting of Sc, Y, B, Al, Ga, In and La; M is one or more elements selected from the group consisting of Si, Ti, Zr, Mn, V, Nd, Ta, W and Mo; MVI is at least one element selected from the group consisting of Bi, Sn, Pr, Sm, Eu, Gd, Dy and Tb; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a < 2, 0 < b
< 2, 0 < c < 10, 0 < d < 10, 0 < e < 14, 0 < f < 14, 0 < g < 10, 0 < h < 2, 1 < o
< 2, 1 < p < 5, 1 < x < 2, and 1 < y < 5.
[7] The light emitting device as claimed in claim 1, wherein the second light emitting diode includes a light emitting diode for emitting light having a wavelength longer than the peak wavelength of the light emitted from the phosphor.
[8] The light emitting device as claimed in claim 7, wherein the second light emitting diode includes a light emitting diode for emitting light in a wavelength range of 590 nm to 720 nm.
[9] The light emitting device as claimed in claim 7, wherein the second light emitting diode further includes a light emitting diode for emitting light in a wavelength range of 420 nm to 480 nm which is shorter than the peak wavelength of the light emitted from the phosphor.
Priority Applications (2)
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US12/439,052 US8188492B2 (en) | 2006-08-29 | 2007-08-24 | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
US13/461,518 US8674380B2 (en) | 2006-08-29 | 2012-05-01 | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
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US13/461,518 Continuation US8674380B2 (en) | 2006-08-29 | 2012-05-01 | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
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Cited By (4)
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JP6365159B2 (en) * | 2014-09-16 | 2018-08-01 | 日亜化学工業株式会社 | Light emitting device |
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US11887973B2 (en) | 2019-07-09 | 2024-01-30 | Intematix Corporation | Full spectrum white light emitting devices |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002170999A (en) * | 2000-12-04 | 2002-06-14 | Nichia Chem Ind Ltd | Light emitting device and its manufacturing method |
KR20040070870A (en) * | 2003-02-05 | 2004-08-11 | 서울반도체 주식회사 | White light emitting device having high brightness |
KR20050049729A (en) * | 2003-11-24 | 2005-05-27 | 엘지이노텍 주식회사 | Semiconductor-emitting device |
JP2006128456A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Light-emitting device |
US20060138435A1 (en) * | 2003-05-01 | 2006-06-29 | Cree, Inc. | Multiple component solid state white light |
Family Cites Families (169)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2110162A (en) * | 1938-03-08 | Luminescent material | ||
US2402760A (en) * | 1942-06-27 | 1946-06-25 | Rca Corp | Luminescent material |
US2617773A (en) * | 1948-09-10 | 1952-11-11 | Westinghouse Electric Corp | Lead activated calcium tungstate phosphor |
US2570136A (en) * | 1949-12-22 | 1951-10-02 | Du Pont | Infrared phosphors |
US2719128A (en) * | 1950-06-21 | 1955-09-27 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescent material |
US2780600A (en) * | 1955-01-24 | 1957-02-05 | Westinghouse Electric Corp | Lead-and manganese-activated cadmium-sodium fluorophosphate phosphor |
US3143510A (en) * | 1959-06-12 | 1964-08-04 | Philips Corp | Copper and tin activated orthophosphate phosphors |
US3598752A (en) * | 1967-04-14 | 1971-08-10 | Itt | Ultraviolet emitting cathodoluminescent material |
NL7013516A (en) | 1970-09-12 | 1972-03-14 | ||
US3644212A (en) * | 1971-02-18 | 1972-02-22 | Westinghouse Electric Corp | Zinc-magnesium silico-germanate phosphor composition and method of preparing same |
US3893939A (en) * | 1973-01-04 | 1975-07-08 | Us Energy | Activated phosphors having matrices of yttrium-transition metal compound |
US3905911A (en) * | 1974-09-25 | 1975-09-16 | Gte Sylvania Inc | Copper activated hafnium phosphate phosphors and method of making |
NL7807274A (en) | 1978-03-10 | 1979-09-12 | Philips Nv | LUMINESCENT FABRIC, LUMINESCENT DISPLAY WITH SUCH FABRIC AND LOW-PRESSURE MERCURY DISCHARGE LAMP WITH SUCH DISPLAY. |
NL8201943A (en) | 1982-05-12 | 1983-12-01 | Philips Nv | LUMINESCENT SCREEN. |
JPS62218476A (en) * | 1986-03-18 | 1987-09-25 | Murata Mfg Co Ltd | Thin-film el element |
JPH07110941B2 (en) * | 1987-10-19 | 1995-11-29 | 化成オプトニクス株式会社 | Luminescent composition |
US4972086A (en) * | 1989-02-03 | 1990-11-20 | Eastman Kodak Company | X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing erbium to reduce afterglow |
DE69002470T2 (en) | 1989-02-07 | 1994-03-03 | Agfa Gevaert Nv | Reproduction of X-ray images with photostimulable phosphor. |
US5177669A (en) * | 1992-03-02 | 1993-01-05 | Motorola, Inc. | Molded ring integrated circuit package |
US5518808A (en) * | 1992-12-18 | 1996-05-21 | E. I. Du Pont De Nemours And Company | Luminescent materials prepared by coating luminescent compositions onto substrate particles |
KR940019586A (en) * | 1993-02-04 | 1994-09-14 | 휴고 라이히무트, 한스 블뢰흐레 | Elevator display element |
US5958100A (en) * | 1993-06-03 | 1999-09-28 | Micron Technology, Inc. | Process of making a glass semiconductor package |
CA2141646C (en) | 1994-02-04 | 2001-11-06 | Nobuyuki Kuwabara | Leather coloring process, leather coloring apparatus, and colored leather produced by such process |
US5472636A (en) * | 1994-09-14 | 1995-12-05 | Osram Sylvania Inc. | Method of preparing manganese and lead coactivated calcium silicate phosphor |
US5770111A (en) * | 1995-04-14 | 1998-06-23 | Kabushiki Kaisha Tokyo Kagaku Kenkyusho | Phosphor with afterglow characteristic |
DE19539315A1 (en) * | 1995-10-23 | 1997-04-24 | Hoechst Ag | UV-active regenerated cellulose fibers |
DE19638667C2 (en) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5965192A (en) * | 1996-09-03 | 1999-10-12 | Advanced Vision Technologies, Inc. | Processes for oxide based phosphors |
DE69627334T2 (en) * | 1996-10-10 | 2003-12-11 | Agfa-Gevaert, Mortsel | New photo-stimulable phosphor |
US5853614A (en) * | 1996-12-17 | 1998-12-29 | Beijing Hongye Coating Materials Company | Long decay luminescent material |
EP0907970B1 (en) * | 1997-03-03 | 2007-11-07 | Koninklijke Philips Electronics N.V. | White light-emitting diode |
JP2992254B2 (en) | 1997-08-11 | 1999-12-20 | 北京市豊台区宏業塗装輔料廠 | Method for producing high-speed excitation / high-brightness / low-attenuation luminescent material |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
RU2134000C1 (en) | 1997-12-31 | 1999-07-27 | Абрамов Владимир Семенович | Light-emitting diode unit |
US6278832B1 (en) | 1998-01-12 | 2001-08-21 | Tasr Limited | Scintillating substance and scintillating wave-guide element |
JP2907286B1 (en) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
KR100355456B1 (en) * | 1999-07-30 | 2002-10-11 | 한국전자통신연구원 | A red phosphor for fluorescent display and a preparation method thereof |
JP2001144331A (en) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light-emitting device |
US6686691B1 (en) * | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
TWI272299B (en) * | 1999-10-06 | 2007-02-01 | Sumitomo Chemical Co | A process for producing aluminate-based phosphor |
JP2001115157A (en) | 1999-10-15 | 2001-04-24 | Nippon Sheet Glass Co Ltd | Phosphor and its production method |
JP3964590B2 (en) | 1999-12-27 | 2007-08-22 | 東芝電子エンジニアリング株式会社 | Optical semiconductor package |
JP2001223305A (en) | 2000-02-10 | 2001-08-17 | Matsushita Electric Ind Co Ltd | Resin encapsulated semiconductor device |
JP3809760B2 (en) | 2000-02-18 | 2006-08-16 | 日亜化学工業株式会社 | Light emitting diode |
US6517218B2 (en) * | 2000-03-31 | 2003-02-11 | Relume Corporation | LED integrated heat sink |
GB0012377D0 (en) * | 2000-05-22 | 2000-07-12 | Isis Innovation | Oxide based phosphors |
JP2002057376A (en) | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | Led lamp |
US6737801B2 (en) * | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
JP4432275B2 (en) | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | Light source device |
TW459403B (en) * | 2000-07-28 | 2001-10-11 | Lee Jeong Hoon | White light-emitting diode |
DE10036940A1 (en) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescence conversion LED |
US7205256B2 (en) * | 2000-10-17 | 2007-04-17 | Sharp Kabushiki Kaisha | Oxide material, method for preparing oxide thin film and element using said material |
JP2002173677A (en) | 2000-12-04 | 2002-06-21 | Tokin Corp | Vacuum ultraviolet light-excited phosphor and phosphor paste using the same |
KR100392363B1 (en) | 2000-12-26 | 2003-07-22 | 한국전자통신연구원 | Phosphor and method for fabricating the same |
AT410266B (en) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT |
JP2002254273A (en) * | 2001-02-23 | 2002-09-10 | Mori Seiki Co Ltd | Control device for cutting tool, cutting tool and its cutting method |
JP3736366B2 (en) | 2001-02-26 | 2006-01-18 | 日亜化学工業株式会社 | Surface mount type light emitting device and light emitting device using the same |
JP3783572B2 (en) | 2001-03-05 | 2006-06-07 | 日亜化学工業株式会社 | Light emitting device |
JP2002299699A (en) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | Light-emitting device and method of manufacturing the same |
JP2002314139A (en) | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
JP2002314143A (en) | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
JP4101468B2 (en) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | Method for manufacturing light emitting device |
JP3891115B2 (en) * | 2001-04-17 | 2007-03-14 | 日亜化学工業株式会社 | Light emitting device |
KR100419611B1 (en) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
JP4055373B2 (en) | 2001-05-31 | 2008-03-05 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
JP2002368277A (en) | 2001-06-05 | 2002-12-20 | Rohm Co Ltd | Chip semiconductor light-emitting device |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
JP4032682B2 (en) | 2001-08-28 | 2008-01-16 | 三菱化学株式会社 | Phosphor |
US7189340B2 (en) * | 2004-02-12 | 2007-03-13 | Mitsubishi Chemical Corporation | Phosphor, light emitting device using phosphor, and display and lighting system using light emitting device |
JP4045781B2 (en) | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | Light emitting device |
KR100923804B1 (en) * | 2001-09-03 | 2009-10-27 | 파나소닉 주식회사 | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
US6770398B1 (en) * | 2001-09-11 | 2004-08-03 | The United States Of America As Represented By The Secretary Of The Army | Potassium stabilized manganese dioxide for lithium rechargeable batteries |
JPWO2003034508A1 (en) * | 2001-10-12 | 2005-02-03 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
CN1152114C (en) | 2001-10-26 | 2004-06-02 | 中国科学院长春应用化学研究所 | Prepn of bluish voilet or green Si-Al-Zn system long-perisistance luminescent material |
JP2003152229A (en) | 2001-11-16 | 2003-05-23 | Rohm Co Ltd | Semiconductor light emitting device |
JP4092911B2 (en) | 2001-12-21 | 2008-05-28 | 松下電器産業株式会社 | Method for manufacturing plasma display device |
CN1266776C (en) | 2002-01-21 | 2006-07-26 | 诠兴开发科技股份有限公司 | Method for making white colore LED |
US6924514B2 (en) * | 2002-02-19 | 2005-08-02 | Nichia Corporation | Light-emitting device and process for producing thereof |
TWI243339B (en) * | 2002-03-19 | 2005-11-11 | Casio Computer Co Ltd | Image reading apparatus and drive control method |
SG173925A1 (en) * | 2002-03-22 | 2011-09-29 | Nichia Corp | Nitride phosphor and production process thereof, and light emitting device |
JP4280038B2 (en) | 2002-08-05 | 2009-06-17 | 日亜化学工業株式会社 | Light emitting device |
JP2003321675A (en) | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | Nitride fluorophor and method for producing the same |
JP4868685B2 (en) | 2002-06-07 | 2012-02-01 | 日亜化学工業株式会社 | Phosphor |
DE10214119A1 (en) | 2002-03-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Optoelectronic component comprises a casting compound which lets through radiation and consist of silicone or a silicone resin |
JP3822545B2 (en) | 2002-04-12 | 2006-09-20 | 士郎 酒井 | Light emitting device |
JP2003306674A (en) * | 2002-04-15 | 2003-10-31 | Sumitomo Chem Co Ltd | Fluorescent material for white led, and white led using the same |
DE10233050B4 (en) | 2002-07-19 | 2012-06-14 | Osram Opto Semiconductors Gmbh | LED-based light source for generating light using the color mixing principle |
JP2004235261A (en) | 2003-01-28 | 2004-08-19 | Matsushita Electric Works Ltd | Optical system device and its manufacturing method |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
JP4263453B2 (en) * | 2002-09-25 | 2009-05-13 | パナソニック株式会社 | Inorganic oxide and light emitting device using the same |
JP2004127988A (en) | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | White light emitting device |
JP2004134699A (en) | 2002-10-15 | 2004-04-30 | Toyoda Gosei Co Ltd | Light emitting device |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP4072632B2 (en) * | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | Light emitting device and light emitting method |
JP3929885B2 (en) | 2002-12-06 | 2007-06-13 | シーケーディ株式会社 | LED lighting apparatus, LED lighting apparatus manufacturing apparatus, and LED lighting apparatus manufacturing method |
DE10259946A1 (en) | 2002-12-20 | 2004-07-15 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Phosphors for converting the ultraviolet or blue emission of a light-emitting element into visible white radiation with very high color rendering |
US7170151B2 (en) | 2003-01-16 | 2007-01-30 | Philips Lumileds Lighting Company, Llc | Accurate alignment of an LED assembly |
CN2624578Y (en) | 2003-01-21 | 2004-07-07 | 夏志清 | AC-DC dual-purpose LED lamp |
KR100499079B1 (en) * | 2003-02-10 | 2005-07-01 | 엘지전자 주식회사 | Oxide green fluorescent material |
US7320531B2 (en) * | 2003-03-28 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | Multi-colored LED array with improved brightness profile and color uniformity |
KR100574546B1 (en) | 2003-03-28 | 2006-04-27 | 한국화학연구원 | Strontium silicate-based phosphor, fabrication method thereof, and led using the phosphor |
US20040206970A1 (en) * | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
TW200501456A (en) * | 2003-04-23 | 2005-01-01 | Hoya Corp | Light-emitting diode |
CA2523544A1 (en) * | 2003-04-30 | 2004-11-18 | Cree, Inc. | High powered light emitter packages with compact optics |
WO2004102685A1 (en) | 2003-05-14 | 2004-11-25 | Nano Packaging Technology, Inc. | Light emitting device, package structure thereof and manufacturing method thereof |
JP2004342870A (en) * | 2003-05-16 | 2004-12-02 | Stanley Electric Co Ltd | Light emitting diode to be driven with large current |
US6982045B2 (en) * | 2003-05-17 | 2006-01-03 | Phosphortech Corporation | Light emitting device having silicate fluorescent phosphor |
EP1484802B1 (en) | 2003-06-06 | 2018-06-13 | Stanley Electric Co., Ltd. | Optical semiconductor device |
US7391153B2 (en) * | 2003-07-17 | 2008-06-24 | Toyoda Gosei Co., Ltd. | Light emitting device provided with a submount assembly for improved thermal dissipation |
US6987353B2 (en) * | 2003-08-02 | 2006-01-17 | Phosphortech Corporation | Light emitting device having sulfoselenide fluorescent phosphor |
US7026755B2 (en) * | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
CN100395897C (en) | 2003-08-08 | 2008-06-18 | 厦门三安电子有限公司 | Nitride device upside down mounting method |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
KR20050034936A (en) * | 2003-10-10 | 2005-04-15 | 삼성전기주식회사 | Wavelength - converted light emitting diode package using phosphor and manufacturing method |
TWI263356B (en) | 2003-11-27 | 2006-10-01 | Kuen-Juei Li | Light-emitting device |
US7066623B2 (en) * | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
US7321161B2 (en) * | 2003-12-19 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | LED package assembly with datum reference feature |
KR100586944B1 (en) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | High power light emitting diode package and method of producing the same |
US7608200B2 (en) | 2004-01-16 | 2009-10-27 | Mitsubishi Chemical Corporation | Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display |
CN2690724Y (en) | 2004-03-05 | 2005-04-06 | 深圳市蓝科电子有限公司 | High brightness luminous diode lighting device |
KR100655894B1 (en) | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Light Emitting Device |
KR100658700B1 (en) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Light emitting device with RGB diodes and phosphor converter |
CN100397544C (en) | 2004-05-27 | 2008-06-25 | 株式会社日立制作所 | Light emitting device and image display device used said |
JP2006012770A (en) * | 2004-05-27 | 2006-01-12 | Hitachi Ltd | Light-emitting device and image display device using this light-emitting device |
US7456499B2 (en) * | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
KR100665298B1 (en) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Light emitting device |
KR100665299B1 (en) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Luminescent material |
TW200614548A (en) | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
US7601276B2 (en) | 2004-08-04 | 2009-10-13 | Intematix Corporation | Two-phase silicate-based yellow phosphor |
JP5081370B2 (en) | 2004-08-31 | 2012-11-28 | 日亜化学工業株式会社 | Light emitting device |
EP1811009A4 (en) * | 2004-09-07 | 2008-10-22 | Sumitomo Chemical Co | Phosphor, phosphor paste and light-emitting device |
US7855395B2 (en) | 2004-09-10 | 2010-12-21 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins on a light emitting diode die |
KR20040088418A (en) * | 2004-09-15 | 2004-10-16 | 박재익 | Tri-color white light emitted diode |
JP4836429B2 (en) * | 2004-10-18 | 2011-12-14 | 株式会社東芝 | Phosphor and light emitting device using the same |
JP4880892B2 (en) | 2004-10-18 | 2012-02-22 | 株式会社東芝 | Phosphor, phosphor manufacturing method, and light emitting device using the same |
CN1289454C (en) | 2004-11-01 | 2006-12-13 | 厦门大学 | Process for preparing natural benzaldehyde |
US7119422B2 (en) * | 2004-11-15 | 2006-10-10 | Unity Opto Technology Co., Ltd. | Solid-state semiconductor light emitting device |
JP2006173433A (en) | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Light transforming ceramic compound, and light emitting device using the same |
AU2005319965B2 (en) | 2004-12-22 | 2011-02-10 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US7138770B2 (en) * | 2004-12-27 | 2006-11-21 | Top Union Globaltek Inc. | LED driving circuit |
US7541728B2 (en) * | 2005-01-14 | 2009-06-02 | Intematix Corporation | Display device with aluminate-based green phosphors |
DE102005005263A1 (en) | 2005-02-04 | 2006-08-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Yellow emitting phosphor and light source with such phosphor |
US7274045B2 (en) * | 2005-03-17 | 2007-09-25 | Lumination Llc | Borate phosphor materials for use in lighting applications |
JP4868499B2 (en) * | 2005-04-08 | 2012-02-01 | 独立行政法人産業技術総合研究所 | Stress luminescent material, manufacturing method thereof, composite material including the same, and matrix structure of stress luminescent material |
JP4938994B2 (en) | 2005-04-22 | 2012-05-23 | ペンタックスリコーイメージング株式会社 | Silica airgel membrane and manufacturing method thereof |
WO2006126817A1 (en) * | 2005-05-24 | 2006-11-30 | Seoul Semiconductor Co., Ltd. | Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof |
KR100927154B1 (en) * | 2005-08-03 | 2009-11-18 | 인터매틱스 코포레이션 | Silicate-based orange phosphors |
CN1317537C (en) | 2005-09-08 | 2007-05-23 | 上海交通大学 | Critical-cross carbon dioxide refrigerating system restriction sleeve |
KR100666211B1 (en) | 2005-09-22 | 2007-01-09 | 한국화학연구원 | Composition of silicates phosphor for uv and long-wavelength excitation |
KR101258397B1 (en) | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | Copper-Alkaline-Earth-Silicate mixed crystal phosphors |
KR101055772B1 (en) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | Light emitting device |
KR100626272B1 (en) | 2006-01-20 | 2006-09-20 | 씨엠에스테크놀로지(주) | Barium silicate phosphor, manufacturing method of the same, and white light emitting device and emitting film using the same |
KR100875443B1 (en) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | Light emitting device |
KR100968844B1 (en) * | 2006-06-29 | 2010-07-09 | 서울반도체 주식회사 | light emitting device |
US7820075B2 (en) * | 2006-08-10 | 2010-10-26 | Intematix Corporation | Phosphor composition with self-adjusting chromaticity |
KR101258227B1 (en) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | Light emitting device |
KR101396588B1 (en) | 2007-03-19 | 2014-05-20 | 서울반도체 주식회사 | Light emitting apparatus having various color temperature |
JP5521273B2 (en) | 2007-06-01 | 2014-06-11 | 日立化成株式会社 | Single crystal for scintillator, heat treatment method for producing single crystal for scintillator, and method for producing single crystal for scintillator |
CN101784636B (en) * | 2007-08-22 | 2013-06-12 | 首尔半导体株式会社 | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
KR101055769B1 (en) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor |
WO2009028818A2 (en) | 2007-08-28 | 2009-03-05 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
US20110062469A1 (en) | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
DE102009059798A1 (en) | 2009-12-21 | 2011-06-22 | LITEC-LP GmbH, 17489 | An agent for improving the stability against the occurring radiation exposure and resistance to the influence of atmospheric moisture in strontium oxyorthosilicate phosphors |
-
2006
- 2006-08-29 KR KR1020060082501A patent/KR101258227B1/en active IP Right Grant
-
2007
- 2007-08-24 WO PCT/KR2007/004066 patent/WO2008026851A1/en active Application Filing
- 2007-08-24 US US12/439,052 patent/US8188492B2/en not_active Expired - Fee Related
-
2012
- 2012-05-01 US US13/461,518 patent/US8674380B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002170999A (en) * | 2000-12-04 | 2002-06-14 | Nichia Chem Ind Ltd | Light emitting device and its manufacturing method |
KR20040070870A (en) * | 2003-02-05 | 2004-08-11 | 서울반도체 주식회사 | White light emitting device having high brightness |
US20060138435A1 (en) * | 2003-05-01 | 2006-06-29 | Cree, Inc. | Multiple component solid state white light |
KR20050049729A (en) * | 2003-11-24 | 2005-05-27 | 엘지이노텍 주식회사 | Semiconductor-emitting device |
JP2006128456A (en) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | Light-emitting device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2448020A1 (en) * | 2009-06-23 | 2012-05-02 | Koito Manufacturing Co., Ltd. | Light emitting module |
EP2448020A4 (en) * | 2009-06-23 | 2014-04-30 | Koito Mfg Co Ltd | Light emitting module |
WO2012062643A1 (en) * | 2010-11-10 | 2012-05-18 | Osram Ag | Lighting device and method for producing a lighting device |
WO2014030148A3 (en) * | 2012-08-24 | 2014-04-17 | Koninklijke Philips N.V. | A light emitting assembly, a lamp and a luminaire |
US9772071B2 (en) | 2012-08-24 | 2017-09-26 | Philips Lighting Holding B.V. | Light emitting assembly, a lamp and a luminaire |
WO2015091191A1 (en) | 2013-12-17 | 2015-06-25 | Koninklijke Philips N.V. | A solid state light emitter package, a light emission device, a flexible led strip and a luminaire |
US9537062B2 (en) | 2013-12-17 | 2017-01-03 | Philips Lighting Holding B.V. | Solid state light emitter package, a light emission device, a flexible LED strip and a luminaire |
Also Published As
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US8188492B2 (en) | 2012-05-29 |
KR20080019940A (en) | 2008-03-05 |
US20120211781A1 (en) | 2012-08-23 |
KR101258227B1 (en) | 2013-04-25 |
US8674380B2 (en) | 2014-03-18 |
US20090315053A1 (en) | 2009-12-24 |
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