WO2008023954A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- WO2008023954A1 WO2008023954A1 PCT/KR2007/004064 KR2007004064W WO2008023954A1 WO 2008023954 A1 WO2008023954 A1 WO 2008023954A1 KR 2007004064 W KR2007004064 W KR 2007004064W WO 2008023954 A1 WO2008023954 A1 WO 2008023954A1
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- WIPO (PCT)
- Prior art keywords
- light
- light emitting
- emitting device
- based phosphor
- emitting diode
- Prior art date
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 50
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000009877 rendering Methods 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 6
- 229910052693 Europium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 229910052775 Thulium Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052706 scandium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052909 inorganic silicate Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 description 12
- 238000000295 emission spectrum Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 YAG:Ge or (Ba Chemical compound 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a light emitting device, and more particularly, to a light emitting device which can be used as general illuminators as well as flashes, household electronics or business machines by improving its color reproduction range.
- a light emitting diode which is a compound semiconductor having p-n junction structure, emits light through recombination of minority carriers (electrons or holes).
- Light emitting diodes include a red light emitting diode using GaAsP or the like, a green light emitting diode using GaP or the like, a blue light emitting diode using an InGaN/ AlGaN double hetero structure, and the like.
- the light emitting diodes have been employed in various application fields, and are implemented in the form of a variously packaged device appropriate to the respective applications.
- the light emitting devices has characteristics of low power consumption, a long lifespan, installability in a narrow space, and strong resistance against vibration.
- white light emitting devices in addition to single color light emitting devices, such as red, blue or green light emitting devices, have been placed on the market. As the white light emitting devices are applied to products for automobiles and illumination, it is expected that their demands will be rapidly increased.
- the methods of implementing white color can be roughly classified into two types.
- the first one is a method in which red, blue and green light emitting diodes are arranged in a device to be adjacent to one another and colors of light emitted from the respective light emitting diodes are mixed to implement white color.
- the respective light emitting diodes have different thermal or temporal characteristics, there are problems in that uniform color mixing cannot be obtained due to changes in a color tone according to usage environment, particularly, the occurrence of color spots, or the like, and thus, the brightness is not sufficiently high.
- the circuit configurations for operating the respective light emitting diodes are complex, and it is difficult to implement perfect white light since it is difficult to obtain optimal conditions for mixing three color lights depending on the positions of the light emitting diodes due to the package configurations.
- its color rendering index(CRI) is as low as about 40, it is not suitable for the general lighting source or the flash.
- the second one is a method in which a phosphor is disposed on a light emitting diode and the color of a portion of primary light emitted from the light emitting diode and the color of secondary light of which wavelength has been converted by the phosphor are mixed to implement white color.
- a phosphor attached onto a light emitting diode for emitting blue light is a phosphor that emits yellowish green or yellow using a portion of the blue light of the light emitting diode as an excitation source, so that white light can be obtained by mixing the blue light emitted from the light emitting diode and the yellowish green or yellow light emitted from the phosphor.
- a phosphor that absorbs the emitted ultraviolet rays and emits visible light ranging from blue to red may be applied to a light emitting diode for emitting ultraviolet rays to thereby obtain white color.
- the blue light emitting diode with a wavelength of 450 to 470 nm and the yellow phosphor such as YAG:Ge or (Ba,Sr,Ca) SiO ;Eu may be generally used. That is, a portion of the blue light causes the yellow phosphor to be excited and then to emit yellow light, and thus, white light can be obtained by mixing the blue and yellow lights.
- An object of the present invention is to provide a light emitting device which comprises at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions, and orthosilicate based phosphors for respectively emitting light in green and red regions, which are excited by the light emitted from the light emitting diode, wherein the phosphors are mixed and distributed over the light emitting diode, whereby the light emitting device can emit white light with excellent color rendering and thus can be used as lighting sources for flashes, general illuminators, household electronics or business machines.
- a light emitting device comprising: at least one of light emitting diodes for emitting lights in blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region.
- the orthosilicate based phosphor for emitting light in the green region and the orthosilicate based phosphor for emitting light in the red region may be represented by Chemical Formula 1 :
- M is at least one element selected from the group consisting of Cu and Pb;
- M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 ⁇ a ⁇ 2, 0 ⁇
- the orthosilicate based phosphors are represented by Chemical Formula
- B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
- the orthosilicate based phosphor for emitting light in the green region may emit light with a peak wavelength positioned in a range of 510 to 545 nm
- the orthosilicate based phosphor for emitting light in the red region may emit light with a peak wavelength positioned in a range of 590 to 615 nm.
- the blue light emitting diode may emit light with a wavelength of 420 to 480 nm.
- the present invention provides a light emitting device, comprising: at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region, wherein the light emitting device has improved color rendering, thereby being used as lighting sources for flashes, general illuminators, household electronics or business machines.
- a light emitting device includes an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region, and emits excellent green and red lights under the excitation in a long wavelength ultraviolet region and a blue region, so that there is an advantage in that the light emitting device can be applied to various application fields, in which a long wavelength ultraviolet region and a blue region are used as energy sources, such as green, red and yellow light emitting devices for ultraviolet light emitting diode and green, pink and white light emitting devices for blue light emitting diode.
- an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region are mixed and distributed over a blue light emitting diode, so that white light with a continuous spectrum ranging from green to red can be implemented to thereby provide a white light emitting device with excellent color rendering.
- the light emitting device of the present invention can implement the high color rending white light with color rendering index of at least 93 when implementing daylight color whose color temperature is equal to or larger than 6,00OK and with color rendering index of at least 85 when implementing warm white color whose color temperature is equal to or smaller than 3,500K, there is an advantage in that the light emitting device may be employed in various household electronics and business machines requiring white lighting sources as well as flashes for camera and general illuminators.
- Fig. 1 is a sectional view showing a chip-type light emitting device according to the present invention.
- Fig. 2 is a sectional view showing a lamp-type light emitting device according to the present invention.
- Fig. 3 is a graph showing a light emission spectrum according to the composition of an orthosilicate based phosphor used in a light emitting device according the present invention.
- Figs. 4 and 5 are graphs showing light emission spectra of the light emitting devices according to the present invention, which respectively emit daylight colors whose color temperatures are different from each other.
- Figs. 6 and 7 are graphs showing light emission spectra of the light emitting devices according to the present invention, which respectively emit warm white colors whose color temperatures are different from each other.
- Substrate 20 Light emitting diode
- the light emitting device of the present invention comprises an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region, which may be excited by lights in blue and ultraviolet regions to emit green light and red light, respectively.
- the orthosilicate based phosphor for emitting light in the green region and the orthosilicate based phosphor for emitting light in the red region are represented by Chemical Formula of chemistry figure 1:
- M is at least one element selected from the group consisting of Cu and Pb;
- M 11 is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 ⁇ a ⁇ 2, 0
- B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
- the orthosilicate based phosphor represented by Chemical Formula 3 emits light with a wavelength of 527 nm
- the orthosilicate based phosphor represented by Chemical Formula 4 emits light with a wavelength of 592 nm
- the orthosilicate based phosphor represented by Chemical Formula 5 emits light with a wavelength of 605 nm.
- the orthosilicate based phosphor allows its wavelength of emission light to be controlled depending on its elements and compositions.
- Excellent green and red lights can be implemented under the excitation of lights in the long wavelength ultraviolet region and the blue region using the aforementioned phosphors according to the present invention.
- the aforementioned phosphors are separately used or mixed to implement various colors such as green, red and yellow.
- the aforementioned phosphors are separately used or mixed to implement various color such blue lagoon, pink and white.
- both the ultraviolet and blue light emitting diodes which are high energy lighting sources can be used together to implement a white light emitting device with a higher illumination.
- Fig. 1 is a sectional view showing a chip-type light emitting device according to the present invention.
- the light emitting device comprises a substrate 10, first and second electrodes 30 and 35 formed on the substrate 10, a light emitting diode 20 mounted on the first electrode 30, and a molding portion 50 for encapsulating the light emitting diode 20.
- An orthosilicate based phosphor 60 for emitting light in the green region and an orthosilicate based phosphor 70 for emitting light in the red region as described above are uniformly mixed and distributed in the molding portion 50.
- the substrate 10 may be formed with a predetermined groove at its central region in which the light emitting diode 20 is mounted, and the groove may be formed in such a manner that a sidewall surface thereof can be inclined at a predetermined slope.
- the light emitting diode 20 is mounted on a bottom surface of the groove, and the sidewall surface with a predetermined inclination allows the light emitted from the light emitting diode 20 to be effectively reflected whereby light emitting efficiency can be increased.
- the first and the second electrodes 30 and 35 are formed on the substrate 10 and connected to anode and cathode terminals of the light emitting diode 20, respectively.
- the first and the second electrodes 30 and 35 may be formed through a printing method.
- the light emitting diode 20 a GaN, InGaN, AlGaN or AlGaInN based blue light emitting diode for emitting blue light is used.
- a light emitting diode for emitting blue light in the range of 420 to 480 nm is employed.
- the present invention is not limited thereto but may further include a light emitting diode for emitting ultraviolet rays in the range of 250 to 410 nm in addition to the blue light. Only one light emitting diode 20 may be used, or a plurality of light emitting diodes 20 may be used if desired.
- the light emitting diode 20 is mounted on the first electrode 30 and electrically connected to the second electrode 35 through a wire 80.
- a wire 80 may be connected to the first and second electrodes 30 and 35 through two wires 80, respectively.
- the molding portion 50 for encapsulating the light emitting diode 20 is formed on the substrate 10.
- the orthosilicate based phosphor 60 for emitting light in the green region and the orthosilicate based phosphor 70 for emitting light in the red region are uniformly mixed and distributed in the molding portion 50.
- the molding portion 50 may be formed through an injection process using a mixture of a predetermined transparent epoxy or silicon resin and the aforementioned phosphors 60 and 70.
- the molding portion 50 may be formed in such a manner that it is manufactured using a separate mold and then pressurized or heat treated.
- the molding portion 50 may be formed into various shapes, such as an optical lens shape, a flat plate shape, and a shape in which unevenness is formed on its surface.
- primary light is emitted from the light emitting diode 20 and causes the phosphors 60 and 70 to emit secondary lights with wavelengths converted, so that a color in a desired spectrum region can be implemented by mixing the primary and secondary light. That is, the blue light is emitted from the blue light emitting diode and causes the orthosilicate based phosphors 60 and 70 to emit the light in the green region and the light in the red region. Thus, a portion of the blue light, i.e. the primary light, may be mixed with the green and red lights, i.e. the secondary lights, to implement white light. Accordingly, the light emitting device of the present invention can implement white light with a continuous spectrum ranging from green to red such that its color rendering can be improved.
- Fig. 2 is a sectional view showing a lamp-type light emitting device according to the present invention.
- the light emitting device comprises a first lead terminal 90 formed with a reflecting portion 45, and a second lead terminal 95 spaced apart from the first lead terminal 90 by a predetermined interval.
- a light emitting diode 20 is mounted on the reflecting portion 45 of the first lead terminal 90 and electrically connected to the second lead terminal 95 through a wire 80.
- a molding portion 50 containing the phosphors 60 and 70 is formed on the light emitting diode 20, and an outer peripheral molding portion 55 manufactured through a mold is formed on front ends of the lead terminals 90 and 95.
- the orthosilicate based phosphors 60 and 70 which absorb light emitted from the light emitting diode 20 and then convert the absorbed lights into lights with corresponding wavelength to thereby emitting lights in the green and red regions, respectively, are uniformly distributed in the molding portion 50.
- the outer peripheral molding portion 55 is made of a transparent epoxy resin to improve the transmittance of light emitted from the light emitting diode 20.
- the present invention may be applied to articles with various structures, and the technical features of the present invention are not limited to the aforementioned embodiments but may be modified or changed in various ways.
- Fig. 3 is a graph showing a light emission spectrum according to the composition of an orthosilicate based phosphor used in a light emitting device according the present invention.
- the light emission wavelength can be controlled from minimum 505 nm to maximum 605 nm depending on the composition of the host and the concentration of the light emission central element, and the excellent light emission spectrum is represented.
- the orthosilicate based phosphor for emitting light in the green region with a peak wavelength positioned in a range of 510 to 545 nm and the orthosilicate based phosphor for emitting light in the red region with a peak wavelength positioned in a range of 590 to 615 nm are combined with each other to implement white light with high color rendering.
- Table 1 represents color rendering index in x and y coordinates of a light emitting device according to the present invention which implements daylight color with a color temperature being equal to or higher than 6,00OK to be generally used for illumination of factories and offices.
- the light emitting device can implement a higher color rendering with a color rendering index in a range from 93 up to 97.
- Table 2 represents color rendering index in x and y coordinates of a light emitting device according to the present invention which implements warm white color light with a color temperature being equal to or lower than 3,50OK to be generally used for illumination of houses and product displays.
- the light emitting device can implement a higher color rendering with a color rendering index in a range from 85 up to 90.
- a primary light is emitted from a blue light emitting diode, and secondary lights of green and red are emitted from phosphors which are excited by a portion of the primary light, whereby the primary and the secondary lights are color- mixed with each other to implement white color. Therefore, the present invention can implement excellent color rendering as compared with the conventional white light emitting device in which a blue light emitting diode and a yellow phosphor are used.
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- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
The present invention provides a light emitting device, comprising at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions; an or- thosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region. The light emitting device of the present invention can implement white light with a continuous spectrum ranging from green to red to obtain excellent color rendering, and thus there is an advantage in that the light emitting device may be employed as a lighting source for flashes, general illuminators, household electronics or business machines.
Description
Description LIGHT EMITTING DEVICE
Technical Field
[1] The present invention relates to a light emitting device, and more particularly, to a light emitting device which can be used as general illuminators as well as flashes, household electronics or business machines by improving its color reproduction range. Background Art
[2] A light emitting diode (LED), which is a compound semiconductor having p-n junction structure, emits light through recombination of minority carriers (electrons or holes). Light emitting diodes include a red light emitting diode using GaAsP or the like, a green light emitting diode using GaP or the like, a blue light emitting diode using an InGaN/ AlGaN double hetero structure, and the like.
[3] Recently, the light emitting diodes have been employed in various application fields, and are implemented in the form of a variously packaged device appropriate to the respective applications. The light emitting devices has characteristics of low power consumption, a long lifespan, installability in a narrow space, and strong resistance against vibration. In recent years, white light emitting devices in addition to single color light emitting devices, such as red, blue or green light emitting devices, have been placed on the market. As the white light emitting devices are applied to products for automobiles and illumination, it is expected that their demands will be rapidly increased.
[4] In light emitting devices technologies, the methods of implementing white color can be roughly classified into two types. The first one is a method in which red, blue and green light emitting diodes are arranged in a device to be adjacent to one another and colors of light emitted from the respective light emitting diodes are mixed to implement white color. However, since the respective light emitting diodes have different thermal or temporal characteristics, there are problems in that uniform color mixing cannot be obtained due to changes in a color tone according to usage environment, particularly, the occurrence of color spots, or the like, and thus, the brightness is not sufficiently high. Further, the circuit configurations for operating the respective light emitting diodes are complex, and it is difficult to implement perfect white light since it is difficult to obtain optimal conditions for mixing three color lights depending on the positions of the light emitting diodes due to the package configurations. Moreover, since its color rendering index(CRI) is as low as about 40, it is not suitable for the general lighting source or the flash.
[5] The second one is a method in which a phosphor is disposed on a light emitting
diode and the color of a portion of primary light emitted from the light emitting diode and the color of secondary light of which wavelength has been converted by the phosphor are mixed to implement white color. For example, attached onto a light emitting diode for emitting blue light is a phosphor that emits yellowish green or yellow using a portion of the blue light of the light emitting diode as an excitation source, so that white light can be obtained by mixing the blue light emitted from the light emitting diode and the yellowish green or yellow light emitted from the phosphor. Alternatively, a phosphor that absorbs the emitted ultraviolet rays and emits visible light ranging from blue to red may be applied to a light emitting diode for emitting ultraviolet rays to thereby obtain white color.
[6] In order to obtain white light emission, the blue light emitting diode with a wavelength of 450 to 470 nm and the yellow phosphor such as YAG:Ge or (Ba,Sr,Ca) SiO ;Eu may be generally used. That is, a portion of the blue light causes the yellow phosphor to be excited and then to emit yellow light, and thus, white light can be obtained by mixing the blue and yellow lights.
[7] However, there is a problem in that such a light emitting diode has its lower color rendering, which is typically measured using the color rendering index (CRI), due to the shortages of green and red spectra. That is, in a case where the white light emitting device obtained through the combination of the blue light emitting diode and the yellow phosphor is used as a lighting source for general illuminators, flashes for cameras, or household electronics or business machines such as color copier or scanners, there may occur a color distortion phenomenon, in which original colors of respective objects cannot be sufficiently expressed, for lack of green and red spectra in the white light emitting device lacks. Disclosure of Invention Technical Problem
[8] The present invention is conceived to solve the aforementioned problem in the prior art. An object of the present invention is to provide a light emitting device which comprises at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions, and orthosilicate based phosphors for respectively emitting light in green and red regions, which are excited by the light emitted from the light emitting diode, wherein the phosphors are mixed and distributed over the light emitting diode, whereby the light emitting device can emit white light with excellent color rendering and thus can be used as lighting sources for flashes, general illuminators, household electronics or business machines. Technical Solution
[9] According to the present invention for achieving the objects, there is provided a
light emitting device, comprising: at least one of light emitting diodes for emitting lights in blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region.
[10] The orthosilicate based phosphor for emitting light in the green region and the orthosilicate based phosphor for emitting light in the red region may be represented by Chemical Formula 1 :
[H] a(M! 0) ■ b(Mπ0) ■ c(MmA) ■ cKiΛo) ■ e (If2O3) ■ f (MV 0Op) ■ g(SiO2) ■ hCM^Λ)
[12] where M is at least one element selected from the group consisting of Cu and Pb;
M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0< a<2, 0<b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[13] Preferably, the orthosilicate based phosphors are represented by Chemical Formula
2:
[14]
((Ba,Sr ,Ca,Mg)i-x.(Pb,Cu)x)2SiO4:Eu,B
[15] where B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; x is set in a range of 0 to 1 ; and Eu and B are set in ranges of 0 to 0.2.
[16] The orthosilicate based phosphor for emitting light in the green region may emit light with a peak wavelength positioned in a range of 510 to 545 nm, and the orthosilicate based phosphor for emitting light in the red region may emit light with a peak wavelength positioned in a range of 590 to 615 nm.
[17] The blue light emitting diode may emit light with a wavelength of 420 to 480 nm.
[18] The present invention provides a light emitting device, comprising: at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light
emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region, wherein the light emitting device has improved color rendering, thereby being used as lighting sources for flashes, general illuminators, household electronics or business machines.
Advantageous Effects
[19] A light emitting device according to the present invention includes an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region, and emits excellent green and red lights under the excitation in a long wavelength ultraviolet region and a blue region, so that there is an advantage in that the light emitting device can be applied to various application fields, in which a long wavelength ultraviolet region and a blue region are used as energy sources, such as green, red and yellow light emitting devices for ultraviolet light emitting diode and green, pink and white light emitting devices for blue light emitting diode.
[20] Specifically, an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region are mixed and distributed over a blue light emitting diode, so that white light with a continuous spectrum ranging from green to red can be implemented to thereby provide a white light emitting device with excellent color rendering. Since the light emitting device of the present invention can implement the high color rending white light with color rendering index of at least 93 when implementing daylight color whose color temperature is equal to or larger than 6,00OK and with color rendering index of at least 85 when implementing warm white color whose color temperature is equal to or smaller than 3,500K, there is an advantage in that the light emitting device may be employed in various household electronics and business machines requiring white lighting sources as well as flashes for camera and general illuminators. Brief Description of the Drawings
[21] Fig. 1 is a sectional view showing a chip-type light emitting device according to the present invention.
[22] Fig. 2 is a sectional view showing a lamp-type light emitting device according to the present invention.
[23] Fig. 3 is a graph showing a light emission spectrum according to the composition of an orthosilicate based phosphor used in a light emitting device according the present invention.
[24] Figs. 4 and 5 are graphs showing light emission spectra of the light emitting devices according to the present invention, which respectively emit daylight colors whose color
temperatures are different from each other.
[25] Figs. 6 and 7 are graphs showing light emission spectra of the light emitting devices according to the present invention, which respectively emit warm white colors whose color temperatures are different from each other.
[26] [Explanation of Reference Numerals for Major Portions Shown in Drawings]
[27] 10: Substrate 20: Light emitting diode
[28] 30, 35: Electrode 50: Molding portion
[29] 60, 70: Phosphor 80: Wire
[30] 90, 95: Lead terminal
Best Mode for Carrying Out the Invention
[31] Hereinafter, a light emitting device according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to embodiments set forth herein, but can be implemented in different forms. In addition, the embodiments are merely provided to allow the present invention to be completely described herein and to fully convey the scope of the invention to those skilled in the art. Throughout the drawings, like reference numerals are used to designate like elements.
[32] The light emitting device of the present invention comprises an orthosilicate based phosphor for emitting light in a green region and an orthosilicate based phosphor for emitting light in a red region, which may be excited by lights in blue and ultraviolet regions to emit green light and red light, respectively.
[33] The orthosilicate based phosphor for emitting light in the green region and the orthosilicate based phosphor for emitting light in the red region are represented by Chemical Formula of chemistry figure 1:
[34] ChemistryFigure 1 a(M ' θ) ■ b(Mπ0) • c(M%) • dCM^O) • eCM^OO • f (MV 0Op) • g(S iO2) • hCM^OJ
[35] where M is at least one element selected from the group consisting of Cu and Pb;
M11 is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0< a<2, 0<b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[36] The orthosilicate based phosphor is represented by Chemical Formula of chemistry figure 2: [37] ChemistryFigure 2
((Ba,Sr ,Ca,Mg)H(Pb,Cu)x)2Si04:Eu,B
[38] where B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; x is set in a range of 0 to 1 ; and Eu and B are set in ranges of 0 to 0.2.
[39] The representative compositions of the orthosilicate based phosphor are represented by Chemical Formulas of chemistry figure 3 to 5:
[40] ChemistryFigure 3
Pb0 iBan.95Sr0 95SiO4: Eu
[41] ChemistryFigure 4
Cu0 115Sr1 7Ca0 25SiO4: Eu [42] ChemistryFigure 5
[43] The orthosilicate based phosphor represented by Chemical Formula 3 emits light with a wavelength of 527 nm, the orthosilicate based phosphor represented by Chemical Formula 4 emits light with a wavelength of 592 nm, and the orthosilicate based phosphor represented by Chemical Formula 5 emits light with a wavelength of 605 nm. As such, the orthosilicate based phosphor allows its wavelength of emission light to be controlled depending on its elements and compositions.
[44] Excellent green and red lights can be implemented under the excitation of lights in the long wavelength ultraviolet region and the blue region using the aforementioned phosphors according to the present invention. In case of an ultraviolet light emitting diode, the aforementioned phosphors are separately used or mixed to implement various colors such as green, red and yellow. In case of a blue light emitting diode, the aforementioned phosphors are separately used or mixed to implement various color such blue lagoon, pink and white. Further, both the ultraviolet and blue light emitting diodes which are high energy lighting sources can be used together to implement a white light emitting device with a higher illumination.
[45] Hereinafter, the light emitting device according to the present invention in which the aforementioned phosphors are used will be described with reference to the accompanying drawings.
[46] Fig. 1 is a sectional view showing a chip-type light emitting device according to the present invention.
[47] Referring to this figure, the light emitting device comprises a substrate 10, first and second electrodes 30 and 35 formed on the substrate 10, a light emitting diode 20 mounted on the first electrode 30, and a molding portion 50 for encapsulating the light emitting diode 20. An orthosilicate based phosphor 60 for emitting light in the green region and an orthosilicate based phosphor 70 for emitting light in the red region as described above are uniformly mixed and distributed in the molding portion 50.
[48] The substrate 10 may be formed with a predetermined groove at its central region in which the light emitting diode 20 is mounted, and the groove may be formed in such a manner that a sidewall surface thereof can be inclined at a predetermined slope. At this time, the light emitting diode 20 is mounted on a bottom surface of the groove, and the sidewall surface with a predetermined inclination allows the light emitted from the light emitting diode 20 to be effectively reflected whereby light emitting efficiency can be increased.
[49] The first and the second electrodes 30 and 35 are formed on the substrate 10 and connected to anode and cathode terminals of the light emitting diode 20, respectively. The first and the second electrodes 30 and 35 may be formed through a printing method.
[50] As the light emitting diode 20, a GaN, InGaN, AlGaN or AlGaInN based blue light emitting diode for emitting blue light is used. In this embodiment, a light emitting diode for emitting blue light in the range of 420 to 480 nm is employed. However, the present invention is not limited thereto but may further include a light emitting diode for emitting ultraviolet rays in the range of 250 to 410 nm in addition to the blue light. Only one light emitting diode 20 may be used, or a plurality of light emitting diodes 20 may be used if desired.
[51] The light emitting diode 20 is mounted on the first electrode 30 and electrically connected to the second electrode 35 through a wire 80. Alternatively, in a case where anode and cathode electrodes are formed on a top surface of the light emitting diode 20, they may be connected to the first and second electrodes 30 and 35 through two wires 80, respectively.
[52] Further, the molding portion 50 for encapsulating the light emitting diode 20 is formed on the substrate 10. As described above, the orthosilicate based phosphor 60 for emitting light in the green region and the orthosilicate based phosphor 70 for emitting light in the red region are uniformly mixed and distributed in the molding portion 50. The molding portion 50 may be formed through an injection process using a mixture of a predetermined transparent epoxy or silicon resin and the aforementioned phosphors 60 and 70. Alternatively, the molding portion 50 may be formed in such a manner that it is manufactured using a separate mold and then pressurized or heat treated. The molding portion 50 may be formed into various shapes, such as an optical
lens shape, a flat plate shape, and a shape in which unevenness is formed on its surface.
[53] In such a light emitting device according to the present invention, primary light is emitted from the light emitting diode 20 and causes the phosphors 60 and 70 to emit secondary lights with wavelengths converted, so that a color in a desired spectrum region can be implemented by mixing the primary and secondary light. That is, the blue light is emitted from the blue light emitting diode and causes the orthosilicate based phosphors 60 and 70 to emit the light in the green region and the light in the red region. Thus, a portion of the blue light, i.e. the primary light, may be mixed with the green and red lights, i.e. the secondary lights, to implement white light. Accordingly, the light emitting device of the present invention can implement white light with a continuous spectrum ranging from green to red such that its color rendering can be improved.
[54] Fig. 2 is a sectional view showing a lamp-type light emitting device according to the present invention.
[55] Referring to this figure, the light emitting device comprises a first lead terminal 90 formed with a reflecting portion 45, and a second lead terminal 95 spaced apart from the first lead terminal 90 by a predetermined interval. A light emitting diode 20 is mounted on the reflecting portion 45 of the first lead terminal 90 and electrically connected to the second lead terminal 95 through a wire 80. A molding portion 50 containing the phosphors 60 and 70 is formed on the light emitting diode 20, and an outer peripheral molding portion 55 manufactured through a mold is formed on front ends of the lead terminals 90 and 95. The orthosilicate based phosphors 60 and 70, which absorb light emitted from the light emitting diode 20 and then convert the absorbed lights into lights with corresponding wavelength to thereby emitting lights in the green and red regions, respectively, are uniformly distributed in the molding portion 50. The outer peripheral molding portion 55 is made of a transparent epoxy resin to improve the transmittance of light emitted from the light emitting diode 20.
[56] As described above, the present invention may be applied to articles with various structures, and the technical features of the present invention are not limited to the aforementioned embodiments but may be modified or changed in various ways.
[57] Fig. 3 is a graph showing a light emission spectrum according to the composition of an orthosilicate based phosphor used in a light emitting device according the present invention. As shown in the figure, the light emission wavelength can be controlled from minimum 505 nm to maximum 605 nm depending on the composition of the host and the concentration of the light emission central element, and the excellent light emission spectrum is represented. As such, the orthosilicate based phosphor for emitting light in the green region with a peak wavelength positioned in a range of 510
to 545 nm and the orthosilicate based phosphor for emitting light in the red region with a peak wavelength positioned in a range of 590 to 615 nm are combined with each other to implement white light with high color rendering.
[58] Table 1 represents color rendering index in x and y coordinates of a light emitting device according to the present invention which implements daylight color with a color temperature being equal to or higher than 6,00OK to be generally used for illumination of factories and offices.
[59] Referring to following Table 1, it can be seen that the light emitting device according to the present invention can implement a higher color rendering with a color rendering index in a range from 93 up to 97.
[60] Table 1
[61] Fig. 4 is a graph showing a light emission spectrum of a light emitting device for emitting a daylight color light whose color temperature is 6,727K and for implementing a color rendering index of 97 at its color coordinate of x=0.310 and y=0.320.
[62] Fig. 5 is a graph showing a light emission spectrum of a light emitting device for emitting a daylight color light whose color temperature is 6,398K and for implementing a color rendering index of 97 at its color coordinate of x=0.315 and y=0.325.
[63] Table 2 represents color rendering index in x and y coordinates of a light emitting device according to the present invention which implements warm white color light with a color temperature being equal to or lower than 3,50OK to be generally used for illumination of houses and product displays.
[64] Referring to following Table 2, it can be seen that the light emitting device according to the present invention can implement a higher color rendering with a color rendering index in a range from 85 up to 90.
[65] Table 2
[66] Fig. 6 is a graph showing a light emission spectrum of a light emitting device for emitting a warm white color light whose color temperature is 3,177K and for implementing a color rendering index of 90 at its color coordinate of x=0.425 and y=0.400.
[67] Fig. 7 is a graph showing a light emission spectrum of a light emitting device for emitting a daylight color light whose color temperature is 3,088K and for implementing a color rendering index of 89 at its color coordinate of x=0.430 and y=0.400.
[68] Referring to the figures, a primary light is emitted from a blue light emitting diode, and secondary lights of green and red are emitted from phosphors which are excited by a portion of the primary light, whereby the primary and the secondary lights are color- mixed with each other to implement white color. Therefore, the present invention can implement excellent color rendering as compared with the conventional white light emitting device in which a blue light emitting diode and a yellow phosphor are used.
Claims
[1] A light emitting device, comprising: at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region.
[2] The light emitting device as claimed in claim 1, wherein the orthosilicate based phosphor for emitting light in the green region and the orthosilicate based phosphor for emitting light in the red region are represented by Chemical
Formula 1:
3 (M 1 O) ■ b(Mπ 0) ■ C (M11 A,) ■ (1 (M111VO) ■ P (M1V);; ) ■ f (M^O11 ) ■ g( S Ϊ 02) ■ H (M^xO1 ) where M is at least one element selected from the group consisting of Cu and Pb; M is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; M is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; M is at least one element selected from the group consisting of B, Al, Ga and In; M is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf; M is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one element selected from the group consisting of F, Cl, Br and I; a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0 < a<2, 0 < b<8, 0<c<4, 0<d<2, 0<e<2, 0<f<2, 0< g<10, 0<h<5, l≤o<2, l≤p<5, l≤x<2, and l≤y<5.
[3] The light emitting device as claimed in claim 2, wherein the orthosilicate based phosphors are represented by Chemical Formula 2:
((Ba,Sr ,Ca,Mg)i-x(Pb.Cu)x)2SiO4:Eu,B where B is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; x is set in a range of 0 to 1 ; and Eu and B are set in ranges of 0 to 0.2.
[4] The light emitting device as claimed in claim 2 or 3, wherein the orthosilicate based phosphor for emitting light in the green region emits light with a peak wavelength positioned in a range of 510 to 545 nm and the orthosilicate based phosphor for emitting light in the red region emits light with a peak wavelength positioned in a range of 590 to 615 nm.
[5] The light emitting device as claimed in any one of claims 1 to 3, wherein the blue
light emitting diode emits light with a wavelength of 420 to 480 nm. [6] A light emitting device, comprising: at least one of light emitting diodes for emitting lights with wavelengths of blue and ultraviolet regions; an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a green region; and an orthosilicate based phosphor excited by the light emitted from the light emitting diode to emit light in a red region, wherein the light emitting device has improved color rendering, thereby being used as lighting sources for flashes, general illuminators, household electronics or business machines.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0081023 | 2006-08-25 | ||
| KR1020060081023A KR20080018620A (en) | 2006-08-25 | 2006-08-25 | Light emitting device |
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| Publication Number | Publication Date |
|---|---|
| WO2008023954A1 true WO2008023954A1 (en) | 2008-02-28 |
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ID=39106993
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2007/004064 WO2008023954A1 (en) | 2006-08-25 | 2007-08-24 | Light emitting device |
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| Country | Link |
|---|---|
| KR (1) | KR20080018620A (en) |
| TW (1) | TWI354384B (en) |
| WO (1) | WO2008023954A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011069177A1 (en) * | 2009-12-07 | 2011-06-16 | Tridonic Gmbh & Co. Kg | Lighting having led |
| JP2015115506A (en) * | 2013-12-12 | 2015-06-22 | パナソニックＩｐマネジメント株式会社 | Illumination light source |
| CN111133594A (en) * | 2017-09-26 | 2020-05-08 | 京瓷株式会社 | Light emitting device and lighting device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100906010B1 (en) * | 2008-04-08 | 2009-07-06 | (주)썬웨이브 | Power led package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809347B2 (en) * | 2000-12-28 | 2004-10-26 | Leuchtstoffwerk Breitungen Gmbh | Light source comprising a light-emitting element |
| KR20050023990A (en) * | 2003-09-04 | 2005-03-10 | 서울반도체 주식회사 | Light emitting diode |
| JP2005229048A (en) * | 2004-02-16 | 2005-08-25 | Stanley Electric Co Ltd | White light emitting diode |
-
2006
- 2006-08-25 KR KR1020060081023A patent/KR20080018620A/en not_active Application Discontinuation
-
2007
- 2007-08-24 TW TW096131448A patent/TWI354384B/en not_active IP Right Cessation
- 2007-08-24 WO PCT/KR2007/004064 patent/WO2008023954A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809347B2 (en) * | 2000-12-28 | 2004-10-26 | Leuchtstoffwerk Breitungen Gmbh | Light source comprising a light-emitting element |
| US6943380B2 (en) * | 2000-12-28 | 2005-09-13 | Toyoda Gosei Co., Ltd. | Light emitting device having phosphor of alkaline earth metal silicate |
| KR20050023990A (en) * | 2003-09-04 | 2005-03-10 | 서울반도체 주식회사 | Light emitting diode |
| JP2005229048A (en) * | 2004-02-16 | 2005-08-25 | Stanley Electric Co Ltd | White light emitting diode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011069177A1 (en) * | 2009-12-07 | 2011-06-16 | Tridonic Gmbh & Co. Kg | Lighting having led |
| JP2015115506A (en) * | 2013-12-12 | 2015-06-22 | パナソニックＩｐマネジメント株式会社 | Illumination light source |
| CN111133594A (en) * | 2017-09-26 | 2020-05-08 | 京瓷株式会社 | Light emitting device and lighting device |
| CN111133594B (en) * | 2017-09-26 | 2023-10-10 | 京瓷株式会社 | Light emitting device and lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080018620A (en) | 2008-02-28 |
| TW200816526A (en) | 2008-04-01 |
| TWI354384B (en) | 2011-12-11 |
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