WO2008023769A1 - Composant passif - Google Patents

Composant passif Download PDF

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Publication number
WO2008023769A1
WO2008023769A1 PCT/JP2007/066377 JP2007066377W WO2008023769A1 WO 2008023769 A1 WO2008023769 A1 WO 2008023769A1 JP 2007066377 W JP2007066377 W JP 2007066377W WO 2008023769 A1 WO2008023769 A1 WO 2008023769A1
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WO
WIPO (PCT)
Prior art keywords
passive component
attenuation pole
pole forming
filter
electrode
Prior art date
Application number
PCT/JP2007/066377
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English (en)
Japanese (ja)
Inventor
Takami Hirai
Yasuhiko Mizutani
Original Assignee
Ngk Insulators, Ltd.
Soshin Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators, Ltd., Soshin Electric Co., Ltd. filed Critical Ngk Insulators, Ltd.
Publication of WO2008023769A1 publication Critical patent/WO2008023769A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters

Definitions

  • the present invention relates to a passive component, for example, a passive component suitable for use in a band-pass filter or the like in which a plurality of resonance circuits are connected in series inside a dielectric substrate.
  • Conventional high frequency filters include multilayer dielectric filters, dielectric filters, SAW filters, BAW filters, and the like, each having advantages and disadvantages.
  • a multilayer dielectric filter is a filter formed by arranging a plurality of 1 / 4 ⁇ stripline resonators inside a dielectric, and is a force resonator that is inexpensive, easy to downsize, and broaden the bandwidth. It is difficult to achieve a steep attenuation characteristic with a low Q value!
  • the SAW filter and BAW filter can obtain a steeper attenuation than a dielectric filter with a very high Q factor of the resonator, but there is a limit to widening the filter bandwidth. In addition, there is a problem that the price is high.
  • the composite filter described in Patent Document 1 has a configuration in which a dielectric notch filter and a surface acoustic wave filter are vertically connected, and the attenuation band of the dielectric notch filter and the attenuation band of the surface acoustic wave filter are It has a substantially matched configuration. This makes it smaller and within the passband A composite filter having low loss and high attenuation outside the passband can be obtained.
  • the composite filter described in Patent Document 2 is formed in a base body in which a plurality of dielectric layers are stacked, a cavity that accommodates a surface acoustic wave filter element formed on the top surface of the base body, and an inner part of the base body. And a low-pass filter force, a surface acoustic wave filter, and a structure electrically connected to the transmission output side of the element.
  • the composite filter described in Patent Document 3 is formed in a base body in which a plurality of dielectric layers are stacked, a cavity that accommodates a surface acoustic wave filter element formed on the top surface of the base body, and an inner part of the base body. And a low-pass filter force, a surface acoustic wave filter, and a structure electrically connected to the transmission input side of the element.
  • the number of connection terminals to the outside is reduced, and the amount of attenuation in the high frequency band can be made larger than the pass band of the surface acoustic wave filter by the low-pass filter.
  • the composite filter described in Patent Document 4 has a configuration in which a ladder type filter and a dual mode type filter (balanced / unbalanced conversion unit) connected to the ladder type filter are provided on a support substrate.
  • the ladder type filter is a force S ladder connection between the first piezoelectric thin film resonator and the second piezoelectric thin film resonator.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2003-179463
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2004-289760
  • Patent Document 3 Japanese Patent Laid-Open No. 2004-254257
  • Patent Document 4 Japanese Unexamined Patent Publication No. 2003 347889
  • the present invention provides a passive component that can further reduce the size, bandwidth, and cost of the composite filter described above, and can also realize a steep attenuation characteristic by further developing the composite filter described above. With the goal.
  • the passive component according to the present invention includes a dielectric substrate formed by laminating a plurality of dielectric layers, a filter formed in the dielectric substrate and having one or more resonance electrodes, and the filter. It has one or more attenuation pole forming elements for forming an attenuation pole in the attenuation characteristic of
  • the filter formed in the dielectric substrate is inexpensive, and can be easily downsized and widened.
  • the filter has one or more attenuation pole forming elements for forming an attenuation pole in the attenuation characteristic of the filter, a steep attenuation characteristic can be obtained.
  • an input terminal is formed on the dielectric substrate, and the one or more attenuation pole forming elements are connected between the input terminal and the input electrode of the filter. May be.
  • an output terminal is formed on the dielectric substrate, and the one or more attenuation pole forming elements are connected between the output terminal and the output electrode of the filter. It ’s good.
  • an input terminal and an output terminal are formed on the dielectric substrate, and between the input terminal and the input electrode of the filter, between the output terminal and the filter.
  • the one or more attenuation pole forming elements may be connected between the output electrodes.
  • the one or more attenuation pole forming elements are connected in parallel between the input terminal and / or the output terminal and the finisher, or are connected in series to the first attenuation pole forming element, You may make it have the 2nd attenuation
  • the one or more attenuation pole forming elements are connected in series or in parallel with the first attenuation pole forming element connected in parallel or in series between the input terminal and / or the output terminal and the filter. It is also possible to have a second attenuation pole forming element and a third attenuation pole forming element connected in parallel or in series! /.
  • an attenuation pole is formed which has two or more inner layer ground electrodes formed so as to sandwich the resonance electrode, and is connected in parallel between the input terminal and / or the output terminal and the filter.
  • the element is connected to the inner layer ground electrode!
  • the attenuation pole forming element may be a SAW (surface acoustic wave) element or a BAW (Balter elastic wave) element.
  • the attenuation pole forming element may be mounted on an upper portion of the dielectric substrate, may be mounted on a lower portion of the dielectric substrate, or the dielectric It is mounted on the side of the board.
  • the attenuation pole forming element may be accommodated in a recess formed in the dielectric substrate.
  • the recess may be a hole surrounded by a side wall, or may be a notched recess with a part of the side wall missing.
  • the passive component of the present invention it is possible to reduce the size, increase the bandwidth, and reduce the cost, and also realize a steep attenuation characteristic.
  • FIG. 1 is a perspective view showing the first passive component with a part thereof omitted.
  • FIG. 2 is an exploded perspective view showing the first passive component with a part thereof omitted.
  • FIG. 3 is a longitudinal sectional view schematically showing a first passive component.
  • FIG. 4 is an equivalent circuit diagram showing a first passive component.
  • FIG. 5 is a diagram showing attenuation characteristics (S (l, 2)) and reflection characteristics (S (l, 1)) of a comparative example.
  • FIG. 6 is a diagram showing attenuation characteristics (S (l, 2)) and reflection characteristics (S (l, 1)) of the first passive component.
  • FIG. 7 is an equivalent circuit diagram showing another circuit configuration of the first passive component.
  • FIG. 8 is a longitudinal sectional view schematically showing a second passive component.
  • FIG. 9 is a longitudinal sectional view schematically showing a third passive component.
  • FIG. 10 is an exploded perspective view in which a part of the third passive component is omitted.
  • FIG. 11 is a longitudinal sectional view schematically showing a fourth passive component.
  • FIG. 12 is a perspective view showing the fifth passive component with a part thereof omitted.
  • FIG. 13 is an exploded perspective view showing the fifth passive component with a part thereof omitted.
  • FIG. 14 is an exploded perspective view with the sixth passive component partially omitted.
  • FIG. 15 is an equivalent circuit diagram showing a passive component according to a first modification.
  • FIG. 16 is an equivalent circuit diagram showing a passive component according to a second modification.
  • FIG. 17 is an equivalent circuit diagram showing a passive component according to a third modification.
  • FIGS. 1 to 3 and FIGS. 8 to 14 the resin coating for protecting the bonding wire is not shown.
  • the passive component according to the first embodiment includes a plurality of dielectric layers (dielectric layers S 1 to S 13: 2) has a dielectric substrate 12 laminated and fired and integrated.
  • the dielectric substrate 12 has, for example, a rectangular parallelepiped shape having an upper surface 14a, a lower surface 14b (see FIG. 3), and a first side surface 16a to a fourth side surface 16d.
  • the dielectric substrate 12 has a recess 18 in which a part of the upper surface 14a is opened, and, as shown in FIG. 2, one input terminal 20, one output terminal 22, Six ground terminals (first ground terminal 24a to sixth ground terminal 24f) are formed.
  • the recess 18 has a structure of a hole 19 having a side wall around it.
  • the dielectric substrate 12 is configured by stacking a first dielectric layer S 1 to a thirteenth dielectric layer S 13 in order from the top.
  • the first to thirteenth dielectric layers S1 to S13 are composed of one or more layers.
  • the dielectric substrate 12 has a filter 26.
  • the filter 26 includes three quarter-resonators (first resonator 28a, second resonator 28b, and third resonator 28c).
  • first resonance electrode 3 Oa constituting the first resonator 28a
  • second resonance electrode 30b constituting the second resonator 28b
  • third resonator A third resonance electrode 30c constituting 28c is formed.
  • the filter 26 includes at least two inner layer ground electrodes (a first inner layer ground electrode 32a and a second inner layer ground electrode 32b) formed so as to sandwich the first resonance electrode 30a to the third resonance electrode 30c. .
  • the first inner layer ground electrode 32a is formed on one main surface of the sixth dielectric layer S6, and the second inner layer ground electrode 32b is formed on one main surface of the twelfth dielectric layer S12.
  • One end of the first resonance electrode 30a (the end near the first side surface 16a of the dielectric substrate 12), one end of the second resonance electrode 30b, and the third resonance electrode
  • One end of 30c is connected to the first via hole 34a, the second via hole 34b, and the third via hole 34c, respectively.
  • the first inner layer ground electrode 32a and the second inner layer ground electrode 32b are electrically connected to each other, and are also electrically connected to the first ground terminal 24a to the third ground terminal 24c. That is, one end of each of the first resonance electrode 30a to the third resonance electrode 30c constitutes a short-circuited end, and each other end forms an open end.
  • the third resonance electrode 30c is formed with a tap electrode 36 from the central portion thereof toward the second side surface 16b of the dielectric substrate 12 (side surface opposite to the first resonance electrode 30a).
  • the tap electrode 36 is electrically connected to the output terminal 22 through the fourth via hole 34d.
  • the first through hole 38a to the fourth through hole 38d constituting the hole 19 are formed, respectively.
  • an input connection electrode 40 electrically connected to the input terminal 20 via a fifth via hole 34e, a first resonance electrode 30a, a sixth via hole 34f, An input electrode 42 electrically connected via the connection electrode 43 and the seventh via hole 34g, and a ground electrode 44 electrically connected via the first inner layer first electrode 32a and the eighth via hole 34h are formed.
  • an input connection electrode 40 electrically connected to the input terminal 20 via a fifth via hole 34e, a first resonance electrode 30a, a sixth via hole 34f, An input electrode 42 electrically connected via the connection electrode 43 and the seventh via hole 34g, and a ground electrode 44 electrically connected via the first inner layer first electrode 32a and the eighth via hole 34h are formed.
  • first attenuation pole forming element 46a and second attenuation pole forming for adding attenuation poles to the attenuation characteristics of the filter 26.
  • Element 46b is mounted on one main surface of the fifth dielectric layer S5.
  • the first attenuation pole forming element 46a is electrically connected to the input connection electrode 40 via the first bonding wire 48a, and is electrically connected to the ground electrode 44 via the second bonding wire 48b.
  • the second attenuation pole forming element 46b is electrically connected to the input electrode 42 and the third bonding wire 48c, and is electrically connected to the input connection electrode 40 and the fourth bonding wire 48d.
  • first dielectric layer S1 to the fourth dielectric layer S4 are laminated on the fifth dielectric layer S5, they are formed on the first dielectric layer S1 to the fourth dielectric layer S4.
  • the first attenuation pole forming element 46a and the second attenuation are formed in the hole 19 having the first main surface of the fifth dielectric layer S5 as the bottom surface, and the first through hole 38a to the fourth through hole 38d.
  • the pole forming element 46b is accommodated.
  • first attenuation pole forming element 46a and the second attenuation pole forming element 46b are accommodated in the hole 19, the first attenuation pole forming element 46a, the second attenuation pole forming element 46b, and the first bonding wires 48a to 3rd are used. Coating of protective resin or the like for protecting the bonding wire 48c becomes easy.
  • a SAW (surface acoustic wave) element or a BAW (Bannolek 1 ⁇ live wave) element can be used as the first attenuation pole forming element 46a and the second attenuation pole forming element 46b.
  • one main surface of the seventh dielectric layer S7 faces the open ends of the first resonance electrode 30a, the second resonance electrode 30b, and the third resonance electrode 30c, and 3 Third inner layer ground electrode 32c (electrode intended to shorten the resonator length used for filter 26) formed close to side surface 16c (side surface opposite to first side surface 16a),
  • the connection electrode 43 described above for electrically connecting the first resonance electrode 30a and the input electrode 42 is formed.
  • the connection electrode 43 is not necessarily formed, but is preferable because it can be used for position adjustment for electrically connecting the input electrode 42 and the substantially central portion in the length direction of the first resonance electrode 30a.
  • a first coupling adjustment electrode 50a for adjusting the degree of coupling between the second resonator 28b and the third resonator 28c is formed on one main surface of the eighth dielectric layer S8, and the tenth dielectric
  • a second coupling adjustment electrode 50b for adjusting the degree of coupling between the first resonator 28a and the second resonator 28b is formed on one main surface of the layer S10! /.
  • the third side surface of the dielectric substrate 12 faces the open ends of the first resonance electrode 30a, the second resonance electrode 30b, and the third resonance electrode 30c.
  • a fourth inner-layer ground electrode 32d (electrode intended to shorten the resonator length used for the filter 26) formed adjacent to 16c is formed! /.
  • the third inner layer ground electrode 32c and the fourth inner layer ground electrode 32d are each provided with a ninth via hole.
  • 34i, 10th via hole 34j, and 1st 1st via hole 34k are electrically connected to 1st inner layer ground electrode 32a and 2nd inner layer ground electrode 32b, and are connected to 4th earth terminal 24d-6th earth terminal 24f Are also electrically connected.
  • the circuit configuration of the first passive component 10A is as follows. First, there are three resonators (first resonator 28a, second resonator) between the input terminal 20 and the output terminal 22. 28b and the third resonator 28c) are connected in parallel, and between the first contact 52a of the first resonator 28a and the second contact 52b of the second resonator 28b, and of the second resonator 28b. A filter 26 to which coupling capacitors Cl and C2 are respectively connected is connected between the second contact 52b and the third contact 52c of the third resonator 28c.
  • the first passive component 10A has a first attenuation between the input terminal 20 and GND (ground).
  • the pole forming element 46a is connected, and the second attenuation pole forming element 46b is connected between the input of the filter 26 (first contact 52a).
  • the frequency characteristics (passband and reflection characteristics) of the circuit configuration (comparative example) in which only the filter 26 is connected between the input terminal 20 and the output terminal 22 are shown in FIG.
  • the force at which the attenuation pole P1 of about 44 dB is formed at the frequency fl on the side shows a gentle curve on the high side, and no attenuation pole exists.
  • the attenuation pole P1 is thought to be due to the first coupling capacitance C1 and the second coupling capacitance C2.
  • the first passive component 10A at the frequency f 2 higher than the above-mentioned frequency fl (near the low band end of the pass band) on the low band side, about 60 dB.
  • a deep attenuation pole P3 of about 55 dB is additionally formed near the high end of the passband (frequency f 3) on the high band side.
  • the broadband dielectric filter is an advantage of the multilayer dielectric filter. The conversion is utilized as it is.
  • the second attenuation pole P2 is due to the first attenuation pole forming element 46a
  • the third attenuation pole P3 is due to the second attenuation pole forming element 46b.
  • the first attenuation pole forming element 46a is connected in parallel to the input terminal 20, and the second attenuation pole forming element 46b is connected in series to the input of the filter 26.
  • steep attenuation characteristics can be obtained as shown in FIG.
  • the filter 26 formed in the dielectric substrate 12 is a multilayer dielectric filter, the advantages of the multilayer dielectric filter, such as low cost, small size, and wide bandwidth can be easily realized.
  • the first passive component 10A it is possible to reduce the size, increase the bandwidth, reduce the cost, and realize a steep attenuation characteristic.
  • the force S is used to eliminate unnecessary coupling between the first attenuation pole forming element 46a and the second attenuation pole forming element 46b and the filter 26.
  • the connection between the first attenuation pole forming element 46a and the second attenuation pole forming element 46b and the filter 26 does not require such a characteristic impedance limitation.
  • the characteristic impedance between the first attenuation pole forming element 46a and the second attenuation pole forming element 46b and the filter 26 can be changed. The same applies to the filter 26 in which a balun and a filter are integrated or a duplexer.
  • the first attenuation pole forming element 46a is connected in parallel to the input terminal 20, and the second attenuation pole forming element 46b is connected in series to the input of the filter 26.
  • the first attenuation pole forming element 46a is connected in parallel to the output terminal 22, and the second attenuation pole forming element 46b is connected in series to the output of the filter 26 (third contact 52c). Good.
  • the input terminal 20 and the output terminal 22 are arranged opposite to the case of the first passive component 10A, and further, the first resonance
  • the arrangement of the electrode 3 Oa and the third resonance electrode 30c may be reversed, and the tap electrode 36 may be formed on the first resonance electrode 30a.
  • the input connection electrode 40 becomes the output connection electrode 52
  • the input electrode 42 becomes the output electrode 54.
  • a passive component (hereinafter referred to as a second passive component 10B) according to the second embodiment will be described with reference to FIG.
  • Components corresponding to the first passive component 10A are denoted by the same reference numerals and redundant description thereof is omitted.
  • the second passive component 10B has substantially the same configuration as the first passive component 10A described above.
  • the recess 18 is formed near the third side surface 16c of the dielectric substrate 12, for example, and has a notch-like recess in which one side wall is missing.
  • the formation position of the first inner layer ground electrode 32a can be brought close to the upper surface of the dielectric substrate 12, and the third inner layer ground electrode 32c exists immediately below the recess 18.
  • the effective thickness hi of the filter 26 is reduced.
  • the ratio of the effective thickness hi of the filter 26 to the total thickness hO of the dielectric substrate 12 hl / h
  • the formation position of the first inner-layer ground electrode 32a can be brought close to the upper surface of the dielectric substrate 12, and the recess 18 A third inner-layer ground electrode 32c is present immediately below, and the third inner-layer ground electrode 32c is used as a shielding electrode for IJ.
  • the effective thickness h2 of the filter 26 is not reduced, that is, the ratio (h2 / h0) of the effective thickness h2 of the filter 26 to the total thickness hO of the dielectric substrate 12 is set to the value of the first passive component 10A.
  • the first attenuation pole forming element 46a and the second attenuation pole forming element 46b without increasing the loss of the filter 26 and the filter 2 can be made larger than the case (hl / hO).
  • a passive component according to the third embodiment (hereinafter referred to as a third passive component 10C) will be described with reference to FIG.
  • Components corresponding to the first passive component 10A are denoted by the same reference numerals and redundant description thereof is omitted.
  • the third passive component 10C has substantially the same configuration as the first passive component 10A described above, but has a recess 18 (in this example, a hole in the lower part of the dielectric substrate 12). 19) is different. That is, the dielectric substrate 12 is formed with a hole 19 having an opening in a part of its lower surface 14b.
  • the first attenuation pole forming element 46 a and the second attenuation pole forming element 46 b are accommodated in the hole 19, and the first attenuation pole forming element 46 a is an input connection electrode exposed through the hole 19. 40 and the ground electrode 44 (see FIG. 10), and the second attenuation pole forming element 46b is electrically connected to the input connection electrode 40 and the input electrode 42 (see FIG. 10) exposed through the hole 19. Is done.
  • the second dielectric layer S 2 The first inner layer ground electrode 32a is formed on one main surface, the third inner layer ground electrode 32c is formed on one main surface of the third dielectric layer S3, and the first inner surface ground electrode 32a is formed on the first main surface of the fourth dielectric layer S4.
  • One coupling adjusting electrode 50a is formed, and the first resonance electrode 30a to the third resonance electrode 30c are formed on one main surface of the fifth dielectric layer S5.
  • the second coupling adjustment electrode 50b is formed on one main surface of the sixth dielectric layer S6, the fourth inner layer ground electrode 32d is formed on one main surface of the seventh dielectric layer S7, and the eighth The second inner layer ground electrode 32b is formed on one main surface of the dielectric layer S8, and the input connection electrode 40, the input electrode 42, and the ground electrode 44 are formed on the other main surface of the ninth dielectric layer S9. ing.
  • the tenth dielectric layer S 10 and the eleventh dielectric layer S 11 are the first dielectric layer S 11 constituting the hole 19 described above.
  • 1 through-hole 38a and 2nd through-hole 38b are respectively formed, and in particular, the other principal surface of the eleventh dielectric layer S11 (a surface that is a frame-like surface and forms the lower surface of the dielectric substrate 12)
  • One input terminal 20, one output terminal 22, and six ground terminals (first ground terminal 24a to sixth ground terminal 24f) are formed! /.
  • the short-circuit ends of the first resonance electrode 30a, the second resonance electrode 30b, and the third resonance electrode 30c are connected to the first inner layer ground via the first via hole 34a, the second via hole 34b, and the third via hole 34c, respectively. It is electrically connected to the electrode 32a and the second inner layer ground electrode 32b, and is also electrically connected to the first ground terminal 24a to the third ground terminal 24c.
  • the third inner-layer ground electrode 32c and the fourth inner-layer ground electrode 32d are connected to the first inner-layer ground electrode 32a and the second via the ninth via hole 34i, the tenth via hole 34j, and the eleventh via hole 34k, respectively. It is electrically connected to the inner layer ground electrode 32b and is also electrically connected to the fourth ground terminal 24d to the sixth ground terminal 24f.
  • the third resonance electrode 30c is electrically connected to the output terminal 22 through the tap electrode 36 and the fourth via hole 34d.
  • the input connection electrode 40 formed on the other main surface of the ninth dielectric layer S9 is provided with a fifth via Honoré.
  • the input electrode 42 is electrically connected to the first resonant electrode 30a via the sixth via hole 34f, the connection electrode 43, and the seventh via hole 34g. 44 is electrically connected to the second inner-layer ground electrode 32b through the eighth via hole 34h.
  • the first attenuation pole forming element 46a is connected between the input terminal 20 and GND (ground) in the same way as the circuit configuration shown in FIG.
  • the second attenuation pole forming element 46b is connected to the 26 inputs (first contact 52a).
  • the first attenuation pole forming element 46a is connected in parallel to the output terminal 22.
  • the first attenuation pole forming element 46a and the first attenuation pole forming element 46a are connected to the input terminal 20 (or the output terminal 22). 2 Wiring distance to the attenuation pole forming element 46b can be shortened, and loss due to wiring can be efficiently reduced. In addition, a steeper attenuation characteristic can be obtained.
  • the force S is used to eliminate unnecessary coupling between the first attenuation pole forming element 46a and the second attenuation pole forming element 46b and the filter 26.
  • a passive component (hereinafter referred to as a fourth passive component 10D) according to the fourth embodiment will be described with reference to FIG. Note that components corresponding to the third passive component 10C are denoted by the same reference numerals, and redundant description thereof is omitted.
  • the fourth passive component 10D has substantially the same configuration as the third passive component 10C described above.
  • the recess 18 is formed, for example, near the third side surface 16c of the dielectric substrate 12, and has a notch-like recess with one side wall missing.
  • the fourth inner layer ground electrode 32d can be used as a shield electrode.
  • the effective thickness of the filter 26 is not reduced, that is, the ratio of the effective thickness h4 of the filter 26 to the total thickness hO of the dielectric substrate 12 (h4 / h0) is the same as that of the third passive component 10C (h3 / h0: Refer to Fig. 9), and the shielding effect between the first attenuation pole forming element 46a and the second attenuation pole forming element 46b and the filter 26 is ensured without increasing the loss of the filter 26. can do.
  • a passive component (hereinafter referred to as a fifth passive component 10E) according to the fifth embodiment will be described with reference to FIG.
  • the fifth passive component 10E is substantially the same as the first passive component 10A described above. However, it is different in that a recess 18 (in this example, a hole 19) is provided on the side of the dielectric substrate 12. That is, the dielectric substrate 12 is provided with a hole 19 having, for example, a part of the first side surface 16a as an opening.
  • the first attenuation pole forming element 46a and the second attenuation pole forming element 46b are accommodated in the hole 19, and the first attenuation pole forming element 46a is an input connection electrode exposed through the hole 19.
  • the second attenuation pole forming element 46 b is electrically connected to the input connection electrode 40 and the input electrode 42 exposed through the hole 19.
  • a seventh ground terminal 24g is formed on the entire upper surface 14a of the dielectric substrate 12, and the lower surface 14b of the dielectric substrate 12 is similar to the first passive component 10A shown in FIG.
  • Six ground terminals first ground terminal 24a to sixth ground terminal 24f
  • input terminal 20, and output terminal 22 are formed! (Hatched).
  • the dielectric substrate 12 is configured by stacking a first dielectric layer S1 to a twelfth dielectric layer S12 in order from the left.
  • These first dielectric layer S1 to twelfth dielectric layer S12 are composed of one or more layers.
  • the first dielectric layer S1 and the second dielectric layer S2 are respectively formed with the first through hole 38a and the second through hole 38b that constitute the hole 19 described above. Yes.
  • the input connection electrode 40, the input electrode 42, and the ground electrode 44 are formed on one main surface of the third dielectric layer S3, and the first inner layer ground electrode 32a is formed on one main surface of the fourth dielectric layer S4.
  • the connection electrode 43 are formed, the first resonance electrode 30a is formed on one main surface of the fifth dielectric layer S5, and the second inner ground electrode 32b and the first coupling are formed on one main surface of the sixth dielectric layer S6.
  • the adjustment electrode 50a is formed, the second resonance electrode 30b is formed on one main surface of the seventh dielectric layer S7, and the second inner layer ground electrode 32c and the second coupling adjustment are formed on one main surface of the eighth dielectric layer S8.
  • the third resonant electrode 30c is formed on one main surface of the ninth dielectric layer S9, and the output electrode 54 is formed on one main surface of the tenth dielectric layer S10.
  • the first inner layer ground electrode 32a to the third inner layer ground electrode 32c are each formed in a straight line, and the seventh ground terminal 24g and the dielectric substrate 12 formed on the upper surface 14a of the dielectric substrate 12.
  • the fourth ground terminal 24d to the sixth ground terminal 24f formed on the lower surface 14b are electrically connected to each other.
  • the first resonance electrode 30a to the third resonance electrode 30c are each formed in a T-shape, and among them, the partial force S extending in the vertical direction of the dielectric substrate 12 and thus extending, the dielectric substrate 12 Are electrically connected to a first ground terminal 24a to a third ground terminal 24c formed on the lower surface 14b of the dielectric substrate 12, respectively.
  • the input connection electrode 40 formed on one main surface of the third dielectric layer S3 is electrically connected to the input terminal 20 formed on the lower surface 14b of the dielectric substrate 12, and the input electrode 42 Is electrically connected to the first resonant electrode 30a through the sixth via hole 34f, the connection electrode 43 and the seventh via hole 34g, and the ground electrode 44 is formed on the lower surface 14b of the dielectric substrate 12.
  • the power terminal 24d is electrically connected.
  • the output electrode 54 formed on one main surface of the tenth dielectric layer S 10 is electrically connected to the third resonance electrode 30c through the fourth via hole 34d.
  • the first attenuation pole forming element 46a is connected between the input terminal 20 and GND (ground) in the same manner as the circuit configuration shown in FIG.
  • the second attenuation pole forming element 46b is connected to the first input (first contact 52a).
  • the first attenuation pole forming element 46a is connected in parallel to the output terminal 22, and the second attenuation pole forming element 46b is connected in series to the output of the filter 26 (third contact 52c). Connect it to the ayoray.
  • the first attenuation pole forming element is connected to the input terminal 20 (or output terminal 22).
  • the wiring distance to 46a and the second attenuation pole forming element 46b can be shortened, and the loss due to wiring can be efficiently reduced. In addition, a steeper attenuation characteristic can be obtained.
  • ground terminals (first ground terminal 24a to sixth ground terminal 24f) that are separated from each other as ground terminals formed on the lower surface 14b of the dielectric substrate 12.
  • the input of the lower surface 14b of the dielectric substrate 12 like the passive component according to the sixth embodiment shown in FIG. 14 (hereinafter referred to as the sixth passive component 10F), is input.
  • One ground terminal (eighth ground terminal 24h) may be formed on almost the entire surface excluding the terminal 20 and the output terminal 22.
  • one end of the first inner layer ground electrode 32a to the third inner layer ground electrode 32c (the end on the lower surface side of the dielectric substrate 12), the first resonance electrode 30a to the first 3
  • the end of the resonant electrode 30c (the end on the lower surface side of the dielectric substrate 12) and the end of the ground electrode 44 (the end on the lower surface side of the dielectric substrate) are electrically connected to the eighth ground terminal 24h, respectively. It is.
  • the arrangement of the electrodes in the dielectric substrate 12 is the same as that of the fifth passive component 10E (see FIG. 13).
  • An inner-layer ground electrode may be formed on the back surface of the twelfth dielectric layer S12.
  • the first attenuation pole forming element 46a and the second attenuation pole forming element 46b may be connected to the input side and the output side of the filter 26, respectively.
  • the first attenuation pole forming element 46a connected in parallel is connected in series between the input terminal 20 and the input of the filter 26. You may make it have the 2nd attenuation pole formation element 46b and the 3rd attenuation pole formation element 46c connected in parallel. In this case, the attenuation band on the low frequency side can be widened by making the resonance frequencies of the first attenuation pole forming element 46a and the third attenuation pole forming element 46c connected in parallel differ.
  • the first attenuation pole forming element 46a connected in series between the input terminal 20 and the input of the filter 26 is used.
  • the resonance frequency of each of the first attenuation pole forming element 46a and the third attenuation pole forming element 46c connected in series is made different by the force S to widen the attenuation band on the high frequency side.
  • the attenuation band on the low frequency side and the high frequency side can be widened.
  • the first attenuation pole forming element 46a to the third attenuation pole forming element 46c may be connected to the output side of the filter 26, or may be connected to the output side in addition to the input side of the filter 26. Do it like that.
  • the attenuation pole forming elements may be connected in series on the input side and / or the output side of the filter 26 by omitting the parallel connection of the attenuation pole forming elements.
  • the configuration of the filter 26 can be a multi-stage resonator, a plurality of resonant electrodes, or a folded structure. In this case, it is possible to further improve the passband characteristics and reduce the size.
  • various terminals are formed on the lower surface 14b of the dielectric substrate 12. By forming various terminals on the side surface of the dielectric substrate 12, wiring loss can be reduced. Of course, various terminals may be formed only on the side surface of the dielectric substrate 12.
  • a plurality of attenuation pole forming elements may be integrated into one chip. In this case, it is possible to reduce the size and mounting man-hours.
  • the attenuation pole forming element may be flip-chip mounted. In this case also, it is possible to reduce the size and the number of mounting steps.
  • the passive component according to the present invention is not limited to the above-described embodiment, but can of course have various configurations without departing from the gist of the present invention.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Dans un filtre (26), un premier résonateur (28a) à un troisième résonateur (28c) sont connectés en parallèle entre une borne d'entrée (20) et une borne de sortie (22), et des capacitances de couplage (C1, C2) sont connectées entre un premier contact (52a) du premier résonateur (28a) et un deuxième contact (52b) du deuxième résonateur (28b), et entre un deuxième contact (52b) du deuxième résonateur (28b) et un troisième contact (52c) du troisième résonateur (28c), respectivement. Dans un premier composant passif (10A), le filtre est connecté et, d'autre part, un premier élément formant pôle d'atténuation (46a) est connecté entre une borne d'entrée (20) et la masse (GND), un second élément formant pôle d'atténuation (46b) est connecté entre la borne d'entrée et l'entrée, c'est-à-dire le premier contact (52a) du filtre (26).
PCT/JP2007/066377 2006-08-23 2007-08-23 Composant passif WO2008023769A1 (fr)

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JP2006226471A JP5016871B2 (ja) 2006-08-23 2006-08-23 受動部品

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WO2013180003A1 (fr) 2012-06-01 2013-12-05 株式会社村田製作所 Module haute fréquence

Citations (7)

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JPH0690102A (ja) * 1992-09-09 1994-03-29 Ngk Insulators Ltd 積層型誘電体フィルタ
JPH1070402A (ja) * 1996-08-28 1998-03-10 Kyocera Corp バンドパスフィルタ
JP2001127504A (ja) * 1999-10-28 2001-05-11 Kyocera Corp 複合フィルタ
JP2001189602A (ja) * 1999-12-28 2001-07-10 Kyocera Corp 高周波部品
JP2003158467A (ja) * 2001-08-27 2003-05-30 Matsushita Electric Ind Co Ltd Ｒｆデバイスおよびそれを用いた通信機器
JP2003198207A (ja) * 2001-12-27 2003-07-11 Ngk Insulators Ltd 共用器
JP2003347889A (ja) * 2002-05-23 2003-12-05 Murata Mfg Co Ltd 圧電フィルタ、およびそれを有する電子部品

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JP2800905B2 (ja) * 1991-10-28 1998-09-21 富士通株式会社 弾性表面波フィルタ
US5254962A (en) * 1992-06-19 1993-10-19 Motorola, Inc. Combined acoustic wave device and ceramic block filter structure
JPH11163218A (ja) * 1997-11-21 1999-06-18 Japan Radio Co Ltd パッケージ構造
JP3916061B2 (ja) * 2002-06-14 2007-05-16 日立金属株式会社 バンドパスフィルタ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0690102A (ja) * 1992-09-09 1994-03-29 Ngk Insulators Ltd 積層型誘電体フィルタ
JPH1070402A (ja) * 1996-08-28 1998-03-10 Kyocera Corp バンドパスフィルタ
JP2001127504A (ja) * 1999-10-28 2001-05-11 Kyocera Corp 複合フィルタ
JP2001189602A (ja) * 1999-12-28 2001-07-10 Kyocera Corp 高周波部品
JP2003158467A (ja) * 2001-08-27 2003-05-30 Matsushita Electric Ind Co Ltd Ｒｆデバイスおよびそれを用いた通信機器
JP2003198207A (ja) * 2001-12-27 2003-07-11 Ngk Insulators Ltd 共用器
JP2003347889A (ja) * 2002-05-23 2003-12-05 Murata Mfg Co Ltd 圧電フィルタ、およびそれを有する電子部品

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