WO2007148457A1 - Appareil pour dépôt chimique en phase vapeur catalytique - Google Patents

Appareil pour dépôt chimique en phase vapeur catalytique Download PDF

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Publication number
WO2007148457A1
WO2007148457A1 PCT/JP2007/055838 JP2007055838W WO2007148457A1 WO 2007148457 A1 WO2007148457 A1 WO 2007148457A1 JP 2007055838 W JP2007055838 W JP 2007055838W WO 2007148457 A1 WO2007148457 A1 WO 2007148457A1
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WO
WIPO (PCT)
Prior art keywords
catalyst body
temperature
wire
tungsten
mixture
Prior art date
Application number
PCT/JP2007/055838
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English (en)
Japanese (ja)
Inventor
Hideki Matsumura
Keisuke Ohdaira
Kazuhiro Honda
Original Assignee
Japan Advanced Institute Of Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Japan Advanced Institute Of Science And Technology filed Critical Japan Advanced Institute Of Science And Technology
Publication of WO2007148457A1 publication Critical patent/WO2007148457A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0238—Impregnation, coating or precipitation via the gaseous phase-sublimation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/20—Carbon compounds
    • B01J27/22—Carbides

Definitions

  • Catalytic Chemical Vapor D osition method Cat_CVD method
  • the invention relating to this thin film deposition technology includes the semiconductor industry such as semiconductor integrated circuits, liquid crystal displays and solar cells, the organic industry such as food packaging films and plastic containers, and the textile industry such as water-repellent finishing of fabrics. Field, machine parts by surface protection film formation etc., automotive industry field, etc., using a thin film in any of the products, it is related to a wide range of industrial fields.
  • the catalytic chemical vapor deposition method may be referred to as “Cat_CVD method”, the catalytic chemical vapor deposition device as “Cat-CVD apparatus”, and tungsten as “W”.
  • the source gas molecules are decomposed by physical collision with electrons in plasma generated by discharge.
  • the plasma enhanced chemical vapor deposition method (PECVD) is known and widely used industrially.
  • the raw material gas is decomposed by a catalytic decomposition reaction with a heated catalyst body, and the decomposition species generated thereby or the species newly generated by the decomposition species are transported to the substrate.
  • the Cat-CVD method for depositing a thin film on the substrate was invented.
  • Fig. 1 (a), (b), and (c) show tungsten (W) wire as catalyst and silane (SiH) gas as source gas.
  • the reaction behavior on the surface of the catalyst body W when a silicon thin film is formed is schematically shown for each temperature of the catalyst body W.
  • the quadruple is adsorbed after dissociating into SiH indicated by symbol 12 and H atom indicated by symbol 13.
  • FIG. 1 (b) schematically shows the case where the temperature of the surface of the tungsten catalyst body 14 has risen to around 600 ° C or higher.
  • SiH is further decomposed on the surface of the tungsten catalyst body 14, and is denoted by SiH as indicated by reference numeral 15.
  • thermal chemical vapor deposition thermal chemical vapor deposition
  • the deposition precursor was said to be SiH when depositing the film by thermal CVD.
  • FIG. 1 (c) schematically shows a case where the temperature of the surface of the tungsten catalyst body 14 further rises to 1000 ° C or higher.
  • SiH is represented by Si indicated by reference numeral 16 and by 4 indicated by reference numeral 4
  • the surface temperature of the tungsten catalyst body 14 is about 1000 ° C, the bond with the silicon (Si) atoms formed on the tungsten catalyst body 14 is not broken, and WSi, Ten 'silicide is formed.
  • the temperature of the catalyst body is further increased to promote thermal desorption of Si atoms from the surface of the tungsten catalyst body 14.
  • the catalyst body temperature is set to 1700 ° C or higher, which is a sufficiently high temperature for the thermal desorption of the S source element to prevent surface modification of the catalyst body such as silicide.
  • the catalyst body heated in the Cat_CVD method is used to suppress the surface modification of the catalyst body such as silicidation rather than thermal decomposition of source gas molecules.
  • the source gas is already decomposed in the process of dissociative adsorption, even at room temperature.
  • the catalyst body uses a metal wire that is easy to heat, and is generally heated by energizing it directly.
  • the heat is fixed from the catalyst body wire at the fixed electrode portion. Conduction to the support part will inevitably lower the catalyst body temperature.
  • the metal catalyst body wire fixing jig 23, which is an electrode fixing portion of the catalyst body wire 21, is covered with a metal cap 22, and the inside of the cap 22
  • Patent Document 1 The idea of filling the gas with another gas that does not react with the catalyst material was born.
  • Patent Document 1 WO2002Z025712 Disclosure of the invention
  • the catalyst body is tungsten and the source gas is a silicon-containing gas such as SiH
  • the temperature-decreasing portion of the catalyst body is likely to be silicided, and the portion that is easily deteriorated mechanically is likely to break.
  • the present invention decomposes a raw material gas by a catalytic cracking reaction with a heated catalyst body, and transports a cracked species generated thereby or a species newly generated by the cracked species to a substrate.
  • a catalytic chemical vapor deposition apparatus Cat-CVD apparatus
  • the catalyst body such as silicidation, caused by the temperature drop in the part of the catalyst body where the temperature falls below the temperature of other parts
  • the purpose is to suppress the occurrence of surface modification.
  • An object of the present invention is to eliminate such a phenomenon.
  • the present invention provides a catalytic body in a Cat_CVD apparatus.
  • a catalytic body in a Cat_CVD apparatus.
  • only the temperature-decreasing part where the temperature is lower than the temperature of the other part in the catalyst body is different from the other part in the catalyst body due to the temperature reduction of the temperature-decreasing part. It is proposed to form a compound or mixture that prevents the formation of the catalyst body at least on the surface of the temperature-decreasing portion.
  • the fixed portion at the end of the catalyst body is an electrode portion for energizing and heating the catalyst body, and the fixed portion that holds the catalyst body in the middle also comes into contact with other members, so that the temperature is lowered by heat conduction. It is possible to cause denaturation of the fixed part due to the influence of the raw material gas caused by this temperature drop.
  • a compound or a mixture is formed on the surface of the catalyst body of the fixed portion so that the catalyst body is hardly modified.
  • the entire catalyst body is made of a compound or a mixture that is difficult to modify, there is a concern that the action of the catalyst body itself may change due to the compounding or mixture. Therefore, only the portion of the catalyst body where the temperature decreases, but only a portion that is so local that it does not affect the properties of the thin film deposited on the substrate, can be compounded or mixed to suppress denaturation. This is the gist of the present invention.
  • any one of tungsten, molybdenum, tantalum, nichrome, inconel, stainless steel, iridium, and rhenium, which is a material suitable for high-temperature heating, is a linear catalyst body wire that can be easily heated, for example. Can be used as
  • the compound or mixture may be a compound or mixture containing an element other than silicon.
  • the compound or mixture may be a metal carbide such as tungsten carbide.
  • the compound or mixture may be a metal compound such as tantalum 'tungsten or a metal mixture.
  • the compound or mixture may be a mixture or metal oxide in which a metal oxide is mixed in the catalyst body.
  • a portion for fixing the catalyst body for example, a fixing portion at the end of the catalyst body and a fixing portion for holding the catalyst body in the middle are covered with a cap of a cylindrical member, and the cap is placed in the cap.
  • the present invention can be applied to a structure in which a gas that does not react with the catalytic medium (for example, an inert gas) is filled to prevent a raw material gas that modifies the catalyst body from entering the fixed portion.
  • the end of the catalyst body is covered with a cap of a cylindrical member, an inert gas is introduced into the cap, the end of the catalyst body extends, and the cap opening on the side that enters the cap Therefore, the present invention can be applied to a structure in which the inert gas is ejected from the gas and a gas that denatures the catalyst body, for example, a raw material gas cannot enter the cap.
  • a compound or mixture that suppresses denaturation is also formed on the surface of the catalyst body located near the outside of the cap, such as the force at the end of the catalyst body in the cap, the force at the opening end of the cap.
  • the temperature of the catalyst body in the vicinity of the outside of the cap opening end is feared to be lowered by the gas blown out from the cap (for example, inert gas), and this portion may also be modified.
  • the range of the catalyst body located in the vicinity of the opening end depends on the temperature of the catalyst body.
  • silane gas is decomposed using a tungsten (W) wire at about 1700 ° C at the center of the catalyst body, an area of 4 cm from the open end of the cap to the outside can be considered.
  • the Cat-CVD apparatus of the present invention in the catalyst body used, silicidation caused by the temperature decrease of the catalyst body portion where the temperature is lower than the temperature in other portions. Thus, the occurrence of catalyst surface modification can be suppressed.
  • the Cat_CVD apparatus of the present invention described above proposes a method for preventing the modification of the catalyst body in the catalytic chemical vapor deposition method. The invention's effect
  • a compound or mixture that suppresses the occurrence of surface modification of the catalyst body, such as silicide, caused by the temperature decrease is formed on at least the surface of the portion of the catalyst body that is lower in temperature than the other parts.
  • Cat—CVD apparatus catalytic chemical vapor deposition apparatus
  • FIG. 3 is a schematic diagram showing a state in which a linear catalyst body is attached to a catalyst body fixing jig
  • Fig. 4 is a schematic diagram of an end fixing portion of the linear catalyst body
  • Fig. 5 is a linear diagram.
  • FIG. 3 is a schematic diagram of a portion that holds and fixes the middle of a catalyst body.
  • the catalyst body illustrated in FIG. 3 is attached to a rectangular frame made up of two opposing rod-shaped catalyst body fixing jigs 32 and two opposing bar-shaped catalyst body fixing jigs 33. Draw a V-shaped catalyst body wire 31 alternately between the two catalyst body fixing jigs 32 multiple times. It was made to go like this.
  • Both ends of the catalyst body wire 31 are hooked and fixed to the catalyst body end fixing portion 34 at the end by a hooking member, and are energized from the power supply line 36. Further, the catalyst body wire 31 is hooked and fixed to the hooking member at the catalyst body fixing portion 35 which is the position of the top of the V shape in the middle.
  • the surface of the catalyst body wire 31 is covered with a compound or mixture that is difficult to modify.
  • the catalyst body wire 31 is in contact with other members, and the temperature is lowered by heat conduction.
  • the portion of the catalyst body wire 31 whose surface is covered with a compound or mixture that is difficult to modify may be collectively referred to as “near catalyst body fixing portion 37”.
  • the catalyst body fixing portion 37 which is a range in which a compound or mixture is formed on the surface of the catalyst body wire 31 in order to prevent modification of the catalyst body wire 31, It is about 4 cm from the fixed part of the catalyst wire.
  • silane (SiH 3) gas is used as the source gas.
  • tungsten carbide is used as the catalyst body wire 31 as a compound or mixture formed on the surface of the tungsten wire, in order to prevent modification of the tungsten wire.
  • Tungsten carbide formed on the surface of the catalyst body wire 31 that is a tungsten wire can be formed by carbonizing the surface of the tungsten wire.
  • the end of the catalyst body wire 41 which is a tungsten (W) wire, is connected to the inside of the metal catalyst body wire fixing jig 44 having a role as an electrode member from the outside. Fastened with fasteners such as screws and nuts.
  • the catalyst body wire fixing jig 44 is inserted into the supporting metal substrate 46 through an insulating member 45.
  • a catalyst body wire 41 is inserted into one end side of the catalyst body wire fixing jig 44, and the other end side is connected as an electrode to a power supply unit (not shown).
  • a metal cap 43 which is a cylindrical hollow body, is detachably attached to the catalyst body wire fixing jig 44 so that the catalyst body wire 41 is disposed therein. The metal cap 43 is exposed through the opening.
  • the metal cap 43 has a large diameter at one end side (lower side in FIG. 4) attached to the catalyst body wire fixing jig 44 and the other end side (upper side in FIG. 4). ) Has a small diameter.
  • the introduced inert gas for example, nitrogen gas
  • the introduced inert gas flows into the metal cap 43 through the flow path penetrating the inside of the catalyst body wire fixing jig 44, and the gold From the small-diameter opening of the genus cap 43, it spouts outward in FIG.
  • tungsten carbide which is a compound or mixture for preventing denaturation formed on the end of catalyst body wire 41 in a portion that may be denatured due to a decrease in temperature, is fastened to jig 44 for fixing catalyst body wire. It is formed about 4cm outside the opening of the metal cap from the end of the metal cap (the range of the thick line indicated by reference numeral 42 in Fig. 4).
  • FIG. 5 is a schematic diagram of a holding and fixing portion that holds the catalyst body wire 41 in the middle of the wiring, and the same reference numerals as those in FIG. 4 denote the same parts.
  • the catalyst body fixing wire is arranged so as to draw a V shape, and the fixed catalyst body line is the top of the V shape as shown in FIG. It is fixed to the catalyst body fixing jig 54.
  • an insulating holding tool 55 is provided, which passes through the two catalyst body wires 41, 41, which are the hypotenuses of the V-shape, in parallel with a predetermined gap therebetween. Pass the catalyst body wire through the metal cap 43, and inside the catalyst body wire fixing jig 54 to which the metal cap 43 is attached, the ends of the two parallel catalyst body wires 41 and 41 are external It is fastened with screws and nuts.
  • the metal cap 43 is the same as that described with reference to FIG. 4, and is a cylindrical hollow body, one end of which is detachably attached to the catalyst body wire fixing jig 54, and the other end is an opening. ing. As in FIG. 4, the metal cap 43 has a large-diameter cylinder on one end and a small-diameter cylinder on the other end.
  • the catalyst wire fixing jig 54 is attached to the supporting metal substrate 46 via the insulating member 51a, and the gas flow member 56 is interposed via the insulating member 5 lb at the opposite position via the supporting metal substrate 46. And attached to the supporting metal substrate 46.
  • the catalyst body wire fixing metal jig 54 and the gas flow member 56 are opposed to each other with a sealed chamber serving as a predetermined gap interposed in the plate thickness portion of the support metal substrate 46.
  • the gas that has flowed through the gas flow member 56 flows into the catalyst body wire fixing jig 54 and the metal cap 43 through the sealed chamber, and flows out from the opening of the metal cap. .
  • the position held by the insulating holder 55 from the portion fastened to the catalyst body wire fixing jig 54, that is, the outside from the opening of the metal cap 43 Tungsten carbide as a compound for preventing modification or as a mixture is formed on the surface of the catalyst body wire 41 up to a position of about 4 cm toward the surface (thick line indicated by reference numeral 42 in FIG. 5).
  • FIG. 6A is an enlarged view of the catalyst body wire fixing jig 44 shown in FIG. 4 and its surroundings
  • FIG. 6B is an enlarged view of the metal cap 43 shown in FIG. 4 and its surroundings.
  • the end of the portion 42 where the tungsten carbide is formed on the surface of the catalyst body wire 41 has a large diameter cylinder at the bottom and a small diameter cylinder at the top.
  • Shaped metal catalyst body wire fixing jig 44 is taken into the inside from the end of the small diameter cylinder. And it is fastened with fasteners such as screws and nuts from the outside.
  • the catalyst body wire fixing jig 44 is attached to the supporting metal substrate 46 via a cylindrical insulating member 45.
  • FIG. 6 (b) a hollow body metal cap having a shape in which a lower diameter cylinder is mounted on the upper part and a small diameter cylinder is placed on the upper part so as to cover the catalyst body wire fixing jig 44. 43 is detachably attached, and the catalyst body wire 42 with tungsten carbide (WC) formed on the surface thereof is exposed through the opening of the metal cap 43 while maintaining a predetermined gap.
  • FIG. 7 is a schematic diagram for explaining an example of a method for forming tungsten carbide (WC) on the surface of a catalyst body wire 41 made of tungsten (W).
  • tungsten carbide (WC) By forming tungsten carbide (WC) on the surface of the catalyst body wire 71 made of tungsten (W), silicidation of the surface of the catalyst body wire 71 is remarkable even if the temperature of the fixed portion of the catalyst body wire 71 decreases. It is suppressed.
  • This carbonized layer is formed by heating the catalyst body wire 71 in methane gas. In order to limit the carbonization region, electricity is supplied only between the catalyst body fixed electrode portion and the portion to be carbonized. Carbonized by heating. This is because the original function of the catalyst is impaired if it is carbonized more than necessary.
  • a clip 75 is attached to the end of the region to be carbonized of the catalyst body wire 71, and the attachment portion and the end of the catalyst body wire 71 are attached.
  • the AC power supply 74 is heated only locally between the two and heated locally, and only the heated portion is carbonized. Therefore, an electric current is passed between the clip 75 and the metal catalyst wire fixing jig 77 serving as an electrode. As a result, tungsten carbide is formed on the surface portion (the portion indicated by reference numeral 72 in FIG. 7) of the catalyst body wire 71 that is energized and heated.
  • the thickness of the carbide layer made of tungsten carbide is only 10 / m as shown in the scanning electron microscope cross-sectional photograph of Fig. 8 in order to maintain the strength of the tungsten (W) medium. Yes.
  • a tungsten catalyst wire having a thickness of 0.5 mm is used.
  • silane (SiH 3) gas is used as the source gas, the fixed portion of the catalyst body wire 41 and the vicinity thereof
  • the metal cap 43 is easily connected to the catalyst body wire end fixing portion and the vicinity thereof, and the catalyst body wire fixing portion and the vicinity thereof.
  • Inactive, inactive Nitrogen gas which is a natural gas, is allowed to flow to suppress intrusion of the raw material gas, silane (SiH) gas.
  • tungsten 'silicide (WSi) formed on the tungsten wire surface is about 5 times larger than that of tungsten itself at room temperature.
  • the resistance of the tungsten wire as a whole seems to increase. In fact, it slightly decreases.
  • the surface layer of the tungsten wire is slightly carbonized by 10 / im as shown in FIG.
  • this 10 ⁇ thick carbide layer alone does not produce a large overall resistance change.
  • the temperature is likely to decrease.
  • the catalyst body wire 41 located inside the metal cap 43 and the outside of the opening of the metal cap 41 have a length of about 4 cm.
  • the surface of the catalyst body wire 41 is preliminarily formed on tungsten carbide, so that denaturation and silicidation due to temperature decrease can be suppressed.
  • FIG. 10 shows the change over time of the resistance of the entire tungsten wire when the tungsten wire is exposed to silane gas at 1650 ° C.
  • the temperature of the tungsten catalyst wire is around 1750 ° C, sometimes about 1800 ° C to avoid silicidation. Therefore, the resistance does not change greatly when observed on the time scale shown in FIG. 10, but here, the phenomenon is accelerated and observed by lowering the catalyst body temperature.
  • reference numeral 101 is a change with time of the resistance of the entire tungsten wire when the tungsten wire is exposed to silane gas at 1650 ° C.
  • reference numeral 102 is the change over time of the resistance of the entire tungsten wire when a tungsten wire having a surface formed of tungsten carbide having a thickness of 10 ⁇ m is exposed to silane gas at 1650 ° C.
  • reference numeral 103 is tanda. This is the change over time in the resistance of the entire tungsten wire when the stainless wire is exposed to silane gas at 1800 ° C.
  • FIG. 10 shows that the resistance of the tungsten catalyst wire decreases after the silane gas is supplied.
  • the result of this study is that the surface of the temperature-decreasing portion of the tungsten catalyst body wire is compounded with carbonization or the like, thereby extending the life of the tungsten catalyst wire by about 5 times or more. Show me.
  • a conventional Cat-CVD device which enabled continuous operation during film deposition for about 3 weeks, was replaced with a compound or mixture that suppresses denaturation on the surface of the catalyst body wire as shown in Figs. 4 and 5 to which the present invention was applied.
  • a compound such as tungsten carbide, it is possible to create a device that can operate continuously for about three months.
  • a silicon film is formed using SiH gas or the like as a raw material.
  • the temperature drop at the end of the catalyst body begins to denature after 3 weeks of continuous use.
  • the lifetime is extended five times or more.
  • the adoption of the present invention realizes a Cat-CVD apparatus that can withstand continuous operation for three months.
  • tungsten carbide is applied to the surface of the tungsten catalyst wire.
  • WC tungsten carbide
  • the catalyst body may be molybdenum, tantalum, nichrome, inconel, stainless steel, iridium, or rhenium in addition to tungsten.
  • the compound or mixture formed on the surface of the catalyst body is a compound or mixture containing an element other than silicon, such as a metal carbide such as tungsten carbide, or a metal compound such as tantalum tungsten.
  • the mixture may be a mixture or a metal oxide in which a metal oxide is mixed in the catalyst body.
  • a part for fixing the catalyst body for example, a fixed part at the end of the catalyst body and a fixed part for holding the contact medium in the middle are covered with a metal cap of a cylindrical member, and the gold
  • the present invention was applied to a structure in which a gas (for example, an inert gas) that does not react with the catalyst body is filled in the metal cap to prevent the raw material gas for modifying the catalyst body from entering the fixed portion.
  • a gas for example, an inert gas
  • the portion to be fixed and the surface of the catalyst body in the vicinity thereof may be formed of a compound or mixture for preventing modification.
  • Fig. 1 is a schematic diagram illustrating the reaction of SiH on the surface of a tungsten catalyst wire.
  • (a) is room temperature
  • (b) is 600 ° C
  • (c) is a schematic diagram illustrating the case of 1000 ° C or higher.
  • FIG. 2 is a diagram illustrating a cap structure used for holding a conventional catalyst body.
  • FIG. 3 is a schematic diagram illustrating a state in which a linear catalyst body is attached to a catalyst body fixing jig.
  • FIG. 4 is a diagram illustrating the present invention, and is a schematic diagram illustrating an end fixing portion of a linear catalyst body
  • FIG. 5 is a diagram for explaining the present invention, and is a schematic diagram for explaining a holding / fixing portion for holding and fixing the middle of a linear catalyst body.
  • FIG. 6 (a) Enlarged view of the catalyst body wire fixing jig shown in FIG. 4 and its surroundings, (b) Enlarged view of the metal cap shown in FIG. 4 and its surroundings.
  • FIG. 7 is a schematic diagram for explaining a method of forming tungsten carbide on the surface of a tungsten catalyst body wire.
  • FIG.8 Cross section SEM of tungsten catalyst wire with tungsten carbide layer formed on the surface image.
  • FIG. 9 An X-ray diffraction pattern of a tungsten catalyst wire with a tungsten carbide layer formed on the [9] surface.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)

Abstract

L'invention concerne un appareil pour dépôt chimique en phase vapeur catalytique (appareil Cat-CVD), selon lequel un gaz d'alimentation est décomposé par contact avec une structure catalytique chauffée et une espèce de décomposition générée par la décomposition ou une espèce nouvellement générée à partir de l'espèce de décomposition est transportée vers un substrat pour déposer un film mince sur le substrat. La partie de la structure catalytique qui a une température inférieure aux autres parties est protégée d'une altération de surface de la structure catalytique attribuable à la température basse, telle que la silicidation. Dans l'appareil Cat-CVD, seule la partie de la structure catalytique qui a une température inférieure aux autres parties est munie, au moins à la surface de la structure catalytique, d'un composé ou mélange empêchant cette partie à température basse de subir une altération différente des altérations ayant lieu dans les autres parties de la structure catalytique, en raison de la température plus basse dans cette partie.
PCT/JP2007/055838 2006-06-22 2007-03-22 Appareil pour dépôt chimique en phase vapeur catalytique WO2007148457A1 (fr)

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