WO2007136956A1 - Procédé de fabrication d'un dispositif électroluminescent à l'aide d'une composition contenant du silicium - Google Patents

Procédé de fabrication d'un dispositif électroluminescent à l'aide d'une composition contenant du silicium Download PDF

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Publication number
WO2007136956A1
WO2007136956A1 PCT/US2007/067266 US2007067266W WO2007136956A1 WO 2007136956 A1 WO2007136956 A1 WO 2007136956A1 US 2007067266 W US2007067266 W US 2007067266W WO 2007136956 A1 WO2007136956 A1 WO 2007136956A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
optical element
silicon
emitting diode
film
Prior art date
Application number
PCT/US2007/067266
Other languages
English (en)
Inventor
Catherine A. Leatherdale
Scott D. Thompson
Larry D. Boardman
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to EP07761165A priority Critical patent/EP2030256A1/fr
Priority to JP2009511138A priority patent/JP2009537991A/ja
Priority to CN2007800177531A priority patent/CN101443926B/zh
Publication of WO2007136956A1 publication Critical patent/WO2007136956A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the invention relates to a method of making a light emitting device, and particularly, to a method of attaching an optical element to a light emitting diode (LED) with a photopolymerizable silicon-containing composition.
  • LED light emitting diode
  • the optical element may comprise a lens, an optical film such as a multilayer optical film or brightness enhancing film, a phosphor- reflector assembly, or a combination thereof.
  • the light emitting device may comprise an LED mounted in a variety of ways such as in a ceramic or polymeric package, or on a circuit board.
  • the optical element may contact the LED or it may be spaced apart from the LED.
  • the method provides a way to attach an optical element to an LED using a photopolymerizable composition with relatively rapid cure mechanisms even at relatively low temperatures.
  • FIG. 2 shows an exemplary light emitting device wherein the optical element is a lens and the LED is in a recessed cavity.
  • FIG. 3 shows exemplary light emitting devices wherein the optical element is a phosphor-reflector assembly.
  • the advantages of using radiation-activated hydrosilylation to cure the photopolymerizable composition include (1) the ability to cure the photopolymerizable composition without subjecting the LED, the substrate to which it is attached, or any other materials present in the package or system, to potentially harmful temperatures, (2) the ability to formulate one-part photopolymerizable compositions that display long working times in the absence of inhibitors (also known as bath life or shelf life), (3) the ability to cure the photopolymerizable composition on demand at the discretion of the user, and (4) the ability to simplify the formulation process by avoiding the need for two-part formulations as is typically required for thermally curable hydrosilylation compositions.
  • the molar ratio of silicon-bonded hydrogen atoms to aliphatic unsaturation in the silicon-containing resin may range from 0.5 to 10.0 mol/mol, preferably from 0.8 to 4.0 mol/mol, and more preferably from 1.0 to 3.0 mol/mol.
  • the phosphor layer may consist of a blend of different types of phosphors in a single layer or a series of layers, each containing one or more types of phosphors.
  • the inorganic phosphor particles in the phosphor layer may vary in size (e.g., diameter) and they may be segregated such that the average particle size is not uniform across the cross-section of the siloxane layer in which they are incorporated.
  • Photoinitiators can optionally be included in the photopolymerizable composition to increase the overall rate of the curing process (or hydrosilylation reaction).
  • Useful photoinitiators include, for example, monoketals of ⁇ -diketones or ⁇ -ketoaldehydes and acyloins and their corresponding ethers (such as those disclosed in U.S. Pat. No. 6,376,569 (Oxman et al.)). If used, such photoinitiators are preferably included in the photopolymerizable composition in an amount of no greater than 50,000 parts by weight, and more preferably no greater than 5000 parts by weight, per one million parts of the composition.
  • Such catalyst inhibitors are preferably included in the photopolymerizable composition in an amount not to exceed the amount of the metal- containing catalyst on a mole basis.
  • the optical element may comprise a lens to control the directionality of light in some way, typically upwards and away and/or at the sides of the light emitting device.
  • Exemplary light emitting devices 10 comprising exemplary lenses 12 are shown in FIG. 1.
  • the lens may comprise a simple lens having a spherical surface such as a hemispherical shape
  • the optical element 12a may also comprise a complex lens having some combination of convex and/or concave surfaces, for example, an aplanatic lens.
  • the lens may also comprise a combination of shapes, for example, it may have sawtooth-like shapes and a cusp shape 12d.
  • the lens comprises a transparent material such as a polymer, glass, quartz, fused silica, ceramic, or the like.
  • the lens may have a refractive index typically in the range of from about 1.4 to about 1.6, preferably about 1.5 to 1.55, depending on the particular lens.
  • the lens is typically prefabricated, and as shown in FIG. 1, it may have a concave underside. In this case, the lens may be placed in contact with the photopolymerizable composition 18 while it is in a deformable state (not completely cured) and positioned relative to the LED such that air and excess composition are expelled. As shown in FIG. 1, it may have a concave underside. In this case, the lens may be placed in contact with the photopolymerizable composition 18 while it is in a deformable state (not completely cured) and positioned relative to the LED such that air and excess composition are expelled. As shown in FIG.
  • a fluorescent material may be incorporated into the light emitting device for converting the color of at least some of the light emitted by the light emitting diode.
  • the fluorescent material may be dispersed throughout the photopolymerizable material or disposed on the underside of the lens that is adjacent the photopolymerizable material.
  • the optical element may comprise an optical film that can manage light such that the light is intentionally enhanced, manipulated, controlled, maintained, transmitted, reflected, refracted, absorbed, etc. Examples of optical films include reflective polarizing films, absorbing polarizing films, retro-reflective films, light guides, diffusive films, brightness enhancement films, glare control films, protective films, privacy films, or a combination thereof.
  • the optical film may comprise any material suitable for use in optical applications. Exemplary properties include optical effectiveness over diverse portions of the ultraviolet, visible, and infrared regions, optical clarity, high index of refraction, durability, and environmental stability. In some cases, the optical film may be substantially specular, absorbing substantially no light over a predetermined wavelength region of interest; i.e., substantially all light over the region that falls on the surface of a first or second optical layer is reflected or transmitted.
  • the optical film comprises a condensation or addition polymer, a blend thereof, or a polymer that is some combination thereof.
  • condensation polymers include polyesters, polycarbonates, cellulose acetate esters, polyurethanes, polyamides, polyimides, poly(meth)acrylates, and the like.
  • addition polymers include poly(meth)acrylates, polystyrenes, polyolefins, polypropylene, cyclic olefins, epoxies, polyvinyl chloride, polyvinylidene fluoride, polyethers, cellulose acetates, polyethersulfone, polysulfone, fluorinated ethylenepropylene (FEP), and the like.
  • the optical films may also comprise polymers derived from metal-catalyzed polymerizations such as polyorganosiloxanes formed by hydros ilylation reactions.
  • the optical film may also comprise a phosphor layer, diffusive layer, matte layer, abrasion resistant layer, layer for chemical or UV protection, support layer, magnetic shield layer, adhesive layer, primer layer, skin layer, dichroic polarizer layer, or combinations thereof.
  • useful support layers include polycarbonate, polyester, acrylic, metal, or glass.
  • the one or more additional layers may be extruded with other layers of the optical film, coated, or laminated.
  • light emitting device 30 comprises a phosphor-reflector assembly 32 as the optical film.
  • the phosphor-reflector assembly comprises a layer of a phosphor material 34 disposed on reflector 36, which may be a short pass reflector or a long pass reflector.
  • the layer of a phosphor material emits visible light when illuminated by light emitted by the LED and transmitted through the reflector.
  • light emitting device 38 comprises a phosphor-reflector assembly 40, the phosphor reflector assembly comprising a layer of phosphor material 42 disposed between two reflectors 44 and 46.
  • Examples include the VikuitiTM BEFII and BEFIII family of prismatic films available from 3 M Company, St. Paul, Minnesota, including BEFII 90/24, BEFII 90/50, BEFIIIM 90/50, and BEFIIIT. Brightness enhancement films can act as retro-reflecting films or elements for use therewith.
  • the layer may be made by coating a flowable composition onto a microstructured tool or liner and then hardening the composition.
  • the flowable composition may be radiation curable and comprise a reactive diluent, oligomer, crosslinker, and an optional photoinitiator which are hardened or cured by application of UV, electron beam, or some other kind of radiation after coating onto the microstructured tool or liner.
  • the flowable composition may be a composition that is made flowable at an elevated temperature and then cooled after coating onto the microstructured tool or liner. Examples of useful radiation curable compositions are described below for a microstructured layer.
  • This polymerizable composition comprises a first monomer comprising a major portion of 2-propenoic acid, (l-methylethylidene)bis[(2,6- dibromo-4,l-phenylene)oxy(2-hydroxy-3,l-propanediyl)] ester; pentaerythritol tri(meth)acrylate; and phenoxyethyl (meth)acrylate.
  • the particular choice of materials used for the polymerizable composition will depend upon the method used to form the microstructured layer, for example, viscosity may be an important factor.
  • the particular application in which the brightness enhancement film will be employed may also be considered, for example, the film needs to have particular optical properties yet be physically and chemically durable over time.
  • the second optical layer in a brightness enhancement film may be described as a base layer. This layer may comprise any material suitable for use in an optical product, i.e., one that is optically clear and designed to control the flow of light. Depending on the particular application, the second optical layer may need to be structurally strong enough so that the brightness enhancement film may be assembled into an optical device.
  • the optical element may also comprise optical elements including those described as extractors or optical concentrators, in U.S. Serial Nos. 10/977577, 10/977225, 10/977248, 10/977241, 11/027404, 11/381324, 11/381329, 11/381332, 11/381984 (Attorney docket nos. 60217, 60218, 60219, 60296, 62044, 62076, 62080, 62081, and 62082), and US 2005/0023545 Al, the disclosures of which are incorporated herein by reference for all that they contain. These optical elements can be used to aid extraction of light from the LED to the surrounding medium as well as to modify the emission pattern of the light. These optical elements typically have a refractive index of about 1.75 or greater and comprise glass, diamond, silicone carbide, sapphire, zirconia, zinc oxide, polymer, or a combination thereof.
  • FIG. 4 shows examples of how an exemplary optical element, ball lens 42, may be attached to LED 44 with photopolymerized composition 46.
  • the ball lens and LED are in contact with each other such that attaching the optical element to the light emitting diode comprises contacting the optical element and light emitting diode.
  • FIG. 4b they are physically close together and spaced apart from each other such that attaching the optical element to the light emitting diode comprises positioning the optical element within 100 nm of the light emitting diode. In both cases, the two are held together by the photopolymerized composition 46.
  • the optical element In most cases, it is desirable for the optical element to be optically coupled to the LED, which is typically the case when the two are physically close together, for example, when they within 100 nm of each other.
  • the optical element 54 and LED 56 are attached by a small amount of the photopolymerized composition 58.
  • the optical element is an extractor 59, and the extractor is attached to LED 56 with photopolymerized composition 58.
  • the photopolymerizable composition may be an encapsulant such that attaching the optical element to the light emitting diode comprises encapsulating the light emitting diode.
  • light emitting device 48 comprises LED 50 encapsulated with photopolymerized composition 52, and embedded in the photopolymerized composition is phosphor-reflector assembly 40.
  • the light emitting device shown in FIG. 3c may be referred to as a phosphor based light source, or PLED, and is described, for example, in US 2004/0145913 Al, US 2004/0145288, and US 2004/0144987, the disclosures of which are incorporated herein by reference.
  • the photopolymerizable composition may also be used to encapsulant an array of LEDs surface mounted on a variety of substrates.
  • the light emitting device described herein comprises an LED that emits light, whether visible, ultraviolet, or infrared. It includes encapsulated semiconductor devices marketed as "LEDs", whether of the conventional or super-radiant variety. Vertical cavity surface emitting laser diodes are another form of LED.
  • An "LED die” is an LED in its most basic form, i.e., in the form of an individual component or chip made by semiconductor wafer processing procedures. The component or chip can include electrical contacts suitable for application of power to energize the device. The individual layers and other functional elements of the component or chip are typically formed on the wafer scale, the finished wafer finally being diced into individual piece parts to yield a multiplicity of LED dies.
  • Useful LEDs include monochrome and phosphor-LEDs (in which blue or UV light is converted to another color via a fluorescent phosphor).
  • the LEDs may be surface mounted or side mounted, in ceramic or polymeric packages either of which may or may not have a reflecting cup, or they may be mounted on circuit boards, or on plastic electronic substrates.
  • LED emission light can be any light that an LED source can emit and can range from the UV to the infrared portions of the electromagnetic spectrum depending on the composition and structure of the semiconductor layers. Where the source of the actinic radiation is the LED itself, LED emission is preferably in the range from 350-500 nm.
  • the photopolymerized composition described herein is resistant to thermal and photodegradation (resistant to yellowing) and thus are particularly useful for white light sources (i.e., white light emitting devices).
  • White light sources that utilize LEDs in their construction can have two basic configurations. In one, referred to herein as direct emissive LEDs, white light is generated by direct emission of different colored LEDs.
  • Examples include a combination of a red LED, a green LED, and a blue LED, and a combination of a blue LED and a yellow LED.
  • LED-excited phosphor-based light sources PLEDs
  • a single LED generates light in a narrow range of wavelengths, which impinges upon and excites a phosphor material to produce visible light.
  • the phosphor can comprise a mixture or combination of distinct phosphor materials, and the light emitted by the phosphor can include a plurality of narrow emission lines distributed over the visible wavelength range such that the emitted light appears substantially white to the unaided human eye.
  • An example of a PLED is a blue LED illuminating a phosphor that converts blue to both red and green wavelengths. A portion of the blue excitation light is not absorbed by the phosphor, and the residual blue excitation light is combined with the red and green light emitted by the phosphor.
  • Another example of a PLED is an ultraviolet (UV) LED illuminating a phosphor that absorbs and converts UV light to red, green, and blue light. It will be apparent to one skilled in the art that competitive absorption of the actinic radiation by the phosphor will decrease absorption by the photoinitiators slowing or even preventing cure if the system is not carefully constructed.
  • the LED package used in the examples comprised a polyphthalamide body injection molded onto an aluminum lead frame.
  • the package had a 9x9 mm square base that was ⁇ 2mm thick and an additional 1.5 mm thick cylindrical section on top that was ⁇ 8 mm in diameter.
  • the package had an internal well that was ⁇ 6 mm in diameter at the top of the well and ⁇ 4 mm at the bottom of the well.
  • the sidewall of the well was sloped at approximately a 70-degree angle and there was a small shelf in the sidewall between the top and bottom section of the well.
  • the aluminum leads in the package were exposed at the bottom of the well, one large aluminum bond pad covering more than half of the base of the well and two smaller aluminum bond pads.
  • the packages were not populated with LEDs.
  • the package described above was filled with the photopolymerizable composition described above to be flush with the top of the well.
  • the polyphthalamide package with photopolymerizable composition was irradiated for 140 seconds under a UVP Blak-Ray Lamp Model XX- 15 fitted with two 16 inch Sylvania F15T8/350BL bulbs emitting primarily at 350nm. After irradiation, the photopolymerizable composition, or encapsulant, had gelled and was very sticky. Onto the surface of the LED package and encapsulant was placed a small ⁇ 9x9mm square piece of a brightness enhancing film BEFII (available from 3 M Company) with the linear prisms facing outward.
  • BEFII brightness enhancing film
  • the film appeared fully wetted with the encapsulant and was placed into a 120 0 C oven for 10 minutes to finish curing the silicone encapsulant. After removing the package from the oven, it was visually inspected and the film was optically coupled to the encapsulant surface. The film was probed with a tweezer and was adhered to the surface of the encapsulant.
  • the film appeared fully wetted with the encapsulant and was placed into a 120 0 C oven for 10 minutes to finish curing the silicone encapsulant. After removing the package from the oven, it was visually inspected and the film was optically coupled to the encapsulant surface. The film was probed with a tweezer and was firmly attached to the surface of the encapsulant.
  • the package described above was filled with the photopolymerizable composition described above to be flush with the top of the well.
  • the polyphthalamide package with photopolymerizable composition was irradiated for 140 seconds under a UVP Blak-Ray
  • Lamp Model XX- 15 fitted with two 16 inch Sylvania F15T8/350BL bulbs emitting primarily at 350nm. After irradiation the encapsulant had gelled and was very sticky.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif électroluminescent. Ledit procédé consiste à préparer une diode électroluminescente, à préparer un élément optique, à fixer l'élément optique sur la diode électroluminescente à l'aide d'une composition photopolymérisable, laquelle composition renferme une résine contenant du silicium et un catalyseur contenant un métal, laquelle résine contient de l'hydrogène lié au silicium et comporte une insaturation aliphatique, puis à appliquer un rayonnement actinique présentant une longueur d'onde inférieure ou égale à 700 nm, afin d'initier une réaction d'hydrosilylation dans la résine contenant du silicium.
PCT/US2007/067266 2006-05-17 2007-04-24 Procédé de fabrication d'un dispositif électroluminescent à l'aide d'une composition contenant du silicium WO2007136956A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07761165A EP2030256A1 (fr) 2006-05-17 2007-04-24 Procédé de fabrication d'un dispositif électroluminescent à l'aide d'une composition contenant du silicium
JP2009511138A JP2009537991A (ja) 2006-05-17 2007-04-24 ケイ素含有組成物を有する発光デバイスの製造方法
CN2007800177531A CN101443926B (zh) 2006-05-17 2007-04-24 利用含硅组合物制备发光器件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/383,916 2006-05-17
US11/383,916 US20070269586A1 (en) 2006-05-17 2006-05-17 Method of making light emitting device with silicon-containing composition

Publications (1)

Publication Number Publication Date
WO2007136956A1 true WO2007136956A1 (fr) 2007-11-29

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US (1) US20070269586A1 (fr)
EP (1) EP2030256A1 (fr)
JP (1) JP2009537991A (fr)
KR (1) KR20090008338A (fr)
CN (1) CN101443926B (fr)
TW (1) TW200802991A (fr)
WO (1) WO2007136956A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP2010047646A (ja) * 2008-08-19 2010-03-04 Momentive Performance Materials Inc 光硬化性オルガノポリシロキサン組成物
WO2010140693A1 (fr) * 2009-06-04 2010-12-09 三洋電機株式会社 Composant électronique
JP2011012264A (ja) * 2009-07-06 2011-01-20 Wacker Chemie Ag 光により架橋可能なシリコーン混合物からシリコーン被覆及びシリコーン成形品を製造する方法
JP2011525298A (ja) * 2008-05-07 2011-09-15 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有光重合可能組成物による光学結合
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US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8940851B2 (en) 2010-10-29 2015-01-27 Wacker Chemie Ag Highly transparent silicone mixtures that can be cross-linked by light
US9018663B2 (en) 2011-04-28 2015-04-28 Asahi Rubber Inc. Lens-equipped optical semiconductor device and method for manufacturing the same
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources

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US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US11210971B2 (en) 2009-07-06 2021-12-28 Cree Huizhou Solid State Lighting Company Limited Light emitting diode display with tilted peak emission pattern
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) * 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
CN101126491B (zh) * 2006-08-18 2011-03-23 鸿富锦精密工业（深圳）有限公司 发光二极管模组
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
EP2080235B1 (fr) * 2006-10-12 2013-12-04 Panasonic Corporation Dispositif électroluminescent
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US20090023234A1 (en) * 2007-07-17 2009-01-22 Hung-Tsung Hsu Method for manufacturing light emitting diode package
US20090065792A1 (en) 2007-09-07 2009-03-12 3M Innovative Properties Company Method of making an led device having a dome lens
US7960192B2 (en) * 2007-09-14 2011-06-14 3M Innovative Properties Company Light emitting device having silicon-containing composition and method of making same
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
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US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
KR101064005B1 (ko) * 2009-03-02 2011-09-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
DE102009034370A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optischen Elements für ein optoelektronisches Bauteil
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8350370B2 (en) 2010-01-29 2013-01-08 Cree Huizhou Opto Limited Wide angle oval light emitting diode package
TWI509838B (zh) * 2010-04-14 2015-11-21 Pang Ming Huang 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構
KR20120008359A (ko) * 2010-07-16 2012-01-30 삼성모바일디스플레이주식회사 봉지 기판 및 유기 발광부 사이에 ｕｖ 차단 성능 등을 가지는 층을 포함하는 유기 발광 소자
JP5775375B2 (ja) * 2010-07-27 2015-09-09 日東電工株式会社 発光ダイオード装置の製造方法
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
CN102468407A (zh) * 2010-11-17 2012-05-23 青岛杰生电气有限公司 一种紫外发光二极管
FR2969311B1 (fr) * 2010-12-20 2013-01-18 Rhodia Acetow Gmbh Module de source lumineuse a led (diode electroluminescente)
KR101220909B1 (ko) * 2011-06-01 2013-01-11 주식회사 아모럭스 형광등형 엘이디 조명등
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
CN103378276B (zh) * 2012-04-19 2016-02-03 展晶科技(深圳)有限公司 发光二极管及其光分配结构
KR101299529B1 (ko) 2012-08-06 2013-08-23 (주)애니캐스팅 발광다이오드용 렌즈, 이를 구비하는 백라이트유닛 및 표시장치
TW201408926A (zh) * 2012-08-24 2014-03-01 Lsq Green Energy Co Ltd 發光二極體燈具及其電路板加工方法
KR102059032B1 (ko) * 2013-01-07 2020-02-11 엘지이노텍 주식회사 발광 소자 패키지
CN104078553A (zh) * 2013-03-28 2014-10-01 新世纪光电股份有限公司 波长转换结构及其制作方法
JP2014216329A (ja) * 2013-04-22 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄの製造方法
DE102013212372A1 (de) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optische Baueinheit
CN104251417A (zh) * 2013-06-28 2014-12-31 展晶科技(深圳)有限公司 光源模组
JP2014216642A (ja) * 2013-08-20 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄ
TWI557370B (zh) * 2013-09-03 2016-11-11 Light emitting device
TWI633157B (zh) 2013-10-18 2018-08-21 Shin-Etsu Chemical Co., Ltd. 紫外線硬化性有機聚矽氧烷組成物及版材之製造方法
US20150311385A1 (en) * 2013-12-02 2015-10-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Luminous Source Utilizing Quantum Dot, and Its Manufacturing Method and Application
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
JP6248881B2 (ja) * 2014-09-22 2017-12-20 トヨタ紡織株式会社 複合膜、及びその製造方法
TW201628218A (zh) * 2015-01-26 2016-08-01 Edison Opto Corp 磷光片與具有磷光片的發光裝置
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils
CN104950518A (zh) * 2015-07-21 2015-09-30 京东方科技集团股份有限公司 量子点膜、量子点膜的制备方法及背光模组
US10128417B2 (en) * 2015-12-02 2018-11-13 Nanosys, Inc. Quantum dot based color conversion layer in display devices
US9938457B1 (en) 2016-09-20 2018-04-10 General Electric Company Methods for fabricating devices containing red line emitting phosphors
CN108574034A (zh) * 2017-03-10 2018-09-25 光宝电子(广州)有限公司 发光装置
US10347806B2 (en) * 2017-04-12 2019-07-09 Luminus, Inc. Packaged UV-LED device with anodic bonded silica lens and no UV-degradable adhesive
JP7165629B2 (ja) 2019-07-12 2022-11-04 Ｄｏｗａエレクトロニクス株式会社 発光素子ランプ及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365920B1 (en) * 1997-03-18 2002-04-02 Korvet Lights Luminescent diode
KR20040021951A (ko) * 2002-09-06 2004-03-11 럭스피아 주식회사 백색 발광다이오드
US6806509B2 (en) * 2003-03-12 2004-10-19 Shin-Etsu Chemical Co., Ltd. Light-emitting semiconductor potting composition and light-emitting semiconductor device
EP1505121A1 (fr) * 2002-04-26 2005-02-09 Kaneka Corporation Composition durcissable, produit durcissant, procede de production correspondant et diode emettrice de lumiere scellee avec le produit durcissant

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553159A (fr) * 1955-12-05
US3220972A (en) * 1962-07-02 1965-11-30 Gen Electric Organosilicon process using a chloroplatinic acid reaction product as the catalyst
US3159662A (en) * 1962-07-02 1964-12-01 Gen Electric Addition reaction
NL131800C (fr) * 1965-05-17
US3410886A (en) * 1965-10-23 1968-11-12 Union Carbide Corp Si-h to c=c or c=c addition in the presence of a nitrile-platinum (ii) halide complex
NL129346C (fr) * 1966-06-23
US3814730A (en) * 1970-08-06 1974-06-04 Gen Electric Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes
US3715334A (en) * 1970-11-27 1973-02-06 Gen Electric Platinum-vinylsiloxanes
US3989666A (en) * 1974-12-02 1976-11-02 Dow Corning Corporation Crosslinker-platinum catalyst-inhibitor and method of preparation thereof
US3933880A (en) * 1974-12-02 1976-01-20 Dow Corning Corporation Method of preparing a platinum catalyst inhibitor
US3989667A (en) * 1974-12-02 1976-11-02 Dow Corning Corporation Olefinic siloxanes as platinum inhibitors
US4256870A (en) * 1979-05-17 1981-03-17 General Electric Company Solventless release compositions, methods and articles of manufacture
US4435259A (en) * 1981-02-02 1984-03-06 Pitney Bowes Inc. Radiation curable composition of vinyl polysiloxane and hydrogen polysiloxane with photosensitizer
US4347346A (en) * 1981-04-02 1982-08-31 General Electric Company Silicone release coatings and inhibitors
US4501637A (en) * 1981-06-12 1985-02-26 Motorola, Inc. LED having self-aligned lens
US4421903A (en) * 1982-02-26 1983-12-20 General Electric Company Platinum complex catalysts
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
USRE33289E (en) * 1983-07-07 1990-08-07 General Electric Company Transparent membrane structures
US4647331A (en) * 1983-07-29 1987-03-03 Motorola, Inc. Method for assembling an electro-optical device
US4504645A (en) * 1983-09-23 1985-03-12 Minnesota Mining And Manufacturing Company Latently-curable organosilicone release coating composition
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4600484A (en) * 1983-12-06 1986-07-15 Minnesota Mining And Manufacturing Company Hydrosilation process using a (η5 -cyclopentadienyl)tri(σ-aliphatic) platinum complex as the catalyst
US4587137A (en) * 1984-09-28 1986-05-06 General Electric Company Novel dual cure silicone compositions
US4585669A (en) * 1984-09-28 1986-04-29 General Electric Company Novel dual cure silicone compositions
US4613215A (en) * 1984-10-09 1986-09-23 Orion Industries, Inc. Mounting bracket for rear view mirror with spring detent
DE3532821A1 (de) * 1985-09-13 1987-03-26 Siemens Ag Leuchtdiode (led) mit sphaerischer linse
US4609574A (en) * 1985-10-03 1986-09-02 Dow Corning Corporation Silicone release coatings containing higher alkenyl functional siloxanes
US4705765A (en) * 1985-12-19 1987-11-10 General Electric Company Hydrosilylation catalyst, method for making and use
US4670531A (en) * 1986-01-21 1987-06-02 General Electric Company Inhibited precious metal catalyzed organopolysiloxane compositions
US4774111A (en) * 1987-06-29 1988-09-27 Dow Corning Corporation Heat-curable silicone compositions comprising fumarate cure-control additive and use thereof
US5145886A (en) * 1988-05-19 1992-09-08 Minnesota Mining And Manufacturing Company Radiation activated hydrosilation reaction
US4916169A (en) * 1988-09-09 1990-04-10 Minnesota Mining And Manufacturing Company Visible radiation activated hydrosilation reaction
US5063102A (en) * 1989-12-01 1991-11-05 Dow Corning Corporation Radiation curable organosiloxane gel compositions
JP2540963B2 (ja) * 1989-12-25 1996-10-09 富士電機株式会社 半導体装置の製造方法
US5310581A (en) * 1989-12-29 1994-05-10 The Dow Chemical Company Photocurable compositions
US6376569B1 (en) * 1990-12-13 2002-04-23 3M Innovative Properties Company Hydrosilation reaction utilizing a (cyclopentadiene)(sigma-aliphatic) platinum complex and a free radical photoinitiator
US6046250A (en) * 1990-12-13 2000-04-04 3M Innovative Properties Company Hydrosilation reaction utilizing a free radical photoinitiator
US5122943A (en) * 1991-04-15 1992-06-16 Miles Inc. Encapsulated light emitting diode and method for encapsulation
US5213864A (en) * 1991-12-05 1993-05-25 At&T Bell Laboratories Silicone encapsulant
US5313365A (en) * 1992-06-30 1994-05-17 Motorola, Inc. Encapsulated electronic package
JPH0629577A (ja) * 1992-07-10 1994-02-04 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
DE4242469A1 (de) * 1992-12-16 1994-06-23 Wacker Chemie Gmbh Katalysatoren für Hydrosilylierungsreaktionen
US5328974A (en) * 1993-05-06 1994-07-12 Wacker Silicones Corporation Platinum catalyst and a curable organopolysiloxane composition containing said platinum catalyst
US5639845A (en) * 1993-06-10 1997-06-17 Shin-Etsu Chemical Co., Ltd. Method for the preparation of a fluorine-containing organopolysiloxane
TW262537B (fr) * 1993-07-01 1995-11-11 Allied Signal Inc
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
US6099783A (en) * 1995-06-06 2000-08-08 Board Of Trustees Operating Michigan State University Photopolymerizable compositions for encapsulating microelectronic devices
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
JP3417230B2 (ja) * 1996-09-25 2003-06-16 信越化学工業株式会社 型取り母型用光硬化性液状シリコーンゴム組成物
US5895228A (en) * 1996-11-14 1999-04-20 International Business Machines Corporation Encapsulation of organic light emitting devices using Siloxane or Siloxane derivatives
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6150546A (en) * 1999-05-03 2000-11-21 General Electric Company Irradiation-curable silicone compositions, photo-active platinum (IV) compounds, and method
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
US6664318B1 (en) * 1999-12-20 2003-12-16 3M Innovative Properties Company Encapsulant compositions with thermal shock resistance
KR20030053472A (ko) * 2000-06-01 2003-06-28 사이픽스 이미징, 인코포레이티드 감열 현상용 감광성 마이크로캡슐을 함유하는 영상화 매체
JP4239439B2 (ja) * 2000-07-06 2009-03-18 セイコーエプソン株式会社 光学装置およびその製造方法ならびに光伝送装置
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6598998B2 (en) * 2001-05-04 2003-07-29 Lumileds Lighting, U.S., Llc Side emitting light emitting device
JP2003234509A (ja) * 2002-02-08 2003-08-22 Citizen Electronics Co Ltd 発光ダイオード
DE10213294B4 (de) * 2002-03-25 2015-05-13 Osram Gmbh Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement
US6679621B2 (en) * 2002-06-24 2004-01-20 Lumileds Lighting U.S., Llc Side emitting LED and lens
US7146106B2 (en) * 2002-08-23 2006-12-05 Amkor Technology, Inc. Optic semiconductor module and manufacturing method
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US6908682B2 (en) * 2002-09-12 2005-06-21 3M Innovative Properties Company Photocured silicone sealant having improved adhesion to plastic
JP2004146554A (ja) * 2002-10-24 2004-05-20 Asahi Rubber:Kk 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
CN102281659B (zh) * 2002-12-26 2014-06-04 株式会社半导体能源研究所 发光装置和制造发光装置的方法
JP4071639B2 (ja) * 2003-01-15 2008-04-02 信越化学工業株式会社 発光ダイオード素子用シリコーン樹脂組成物
US7245072B2 (en) * 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US20040159900A1 (en) * 2003-01-27 2004-08-19 3M Innovative Properties Company Phosphor based light sources having front illumination
US6806658B2 (en) * 2003-03-07 2004-10-19 Agilent Technologies, Inc. Method for making an LED
KR101148332B1 (ko) * 2003-04-30 2012-05-25 크리, 인코포레이티드 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
JP2005020464A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 光半導体装置およびその製造方法
US6921929B2 (en) * 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
JP4586967B2 (ja) * 2003-07-09 2010-11-24 信越化学工業株式会社 発光半導体被覆保護材及び発光半導体装置
TW200509329A (en) * 2003-08-26 2005-03-01 Yung-Shu Yang LED package material and process
JP4908736B2 (ja) * 2003-10-01 2012-04-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2005120228A (ja) * 2003-10-16 2005-05-12 Nitto Denko Corp 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置
JP4503271B2 (ja) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 シリコーン積層体の製造方法
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
JP4300418B2 (ja) * 2004-04-30 2009-07-22 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP2005327777A (ja) * 2004-05-12 2005-11-24 Shin Etsu Chem Co Ltd 発光ダイオード用シリコーン樹脂組成物
US7119018B2 (en) * 2004-07-09 2006-10-10 International Buisness Machines Corporation Copper conductor
US20060035092A1 (en) * 2004-08-10 2006-02-16 Shin-Etsu Chemical Co., Ltd. Resin composition for sealing LED elements and cured product generated by curing the composition
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
US20060186428A1 (en) * 2005-02-23 2006-08-24 Tan Kheng L Light emitting device with enhanced encapsulant adhesion using siloxane material and method for fabricating the device
JP4876426B2 (ja) * 2005-04-08 2012-02-15 日亜化学工業株式会社 耐熱性及び耐光性に優れる発光装置
US20070092736A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20070092737A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
EP1949459A4 (fr) * 2005-10-24 2014-04-30 3M Innovative Properties Co Procede de fabrication d' un dispositif emetteur de lumiere comportant un encapsulant moule

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365920B1 (en) * 1997-03-18 2002-04-02 Korvet Lights Luminescent diode
EP1505121A1 (fr) * 2002-04-26 2005-02-09 Kaneka Corporation Composition durcissable, produit durcissant, procede de production correspondant et diode emettrice de lumiere scellee avec le produit durcissant
KR20040021951A (ko) * 2002-09-06 2004-03-11 럭스피아 주식회사 백색 발광다이오드
US6806509B2 (en) * 2003-03-12 2004-10-19 Shin-Etsu Chemical Co., Ltd. Light-emitting semiconductor potting composition and light-emitting semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10546978B2 (en) 2003-09-18 2020-01-28 Cree, Inc. Molded chip fabrication method and apparatus
US10164158B2 (en) 2003-09-18 2018-12-25 Cree, Inc. Molded chip fabrication method and apparatus
US9105817B2 (en) 2003-09-18 2015-08-11 Cree, Inc. Molded chip fabrication method and apparatus
US9093616B2 (en) 2003-09-18 2015-07-28 Cree, Inc. Molded chip fabrication method and apparatus
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2009147343A (ja) * 2007-12-14 2009-07-02 Cree Inc Ｌｅｄランプにおける遠心分離力を用いる蛍光体の分配
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP2011525298A (ja) * 2008-05-07 2011-09-15 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有光重合可能組成物による光学結合
JP5512515B2 (ja) * 2008-05-30 2014-06-04 シャープ株式会社 発光装置、面光源および液晶表示装置
JP2014064021A (ja) * 2008-05-30 2014-04-10 Sharp Corp 発光装置、面光源および液晶表示装置
JP2010047646A (ja) * 2008-08-19 2010-03-04 Momentive Performance Materials Inc 光硬化性オルガノポリシロキサン組成物
WO2010140693A1 (fr) * 2009-06-04 2010-12-09 三洋電機株式会社 Composant électronique
JP2011012264A (ja) * 2009-07-06 2011-01-20 Wacker Chemie Ag 光により架橋可能なシリコーン混合物からシリコーン被覆及びシリコーン成形品を製造する方法
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8940851B2 (en) 2010-10-29 2015-01-27 Wacker Chemie Ag Highly transparent silicone mixtures that can be cross-linked by light
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9018663B2 (en) 2011-04-28 2015-04-28 Asahi Rubber Inc. Lens-equipped optical semiconductor device and method for manufacturing the same

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