WO2007125756A1 - 微小構造体の検査装置、及び微小構造体の検査方法 - Google Patents

微小構造体の検査装置、及び微小構造体の検査方法 Download PDF

Info

Publication number
WO2007125756A1
WO2007125756A1 PCT/JP2007/058069 JP2007058069W WO2007125756A1 WO 2007125756 A1 WO2007125756 A1 WO 2007125756A1 JP 2007058069 W JP2007058069 W JP 2007058069W WO 2007125756 A1 WO2007125756 A1 WO 2007125756A1
Authority
WO
WIPO (PCT)
Prior art keywords
microstructure
probe
movable part
nozzles
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/058069
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Naoki Ikeuchi
Masami Yakabe
Akiko Kamigori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US12/282,744 priority Critical patent/US20090039908A1/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008513136A priority patent/JPWO2007125756A1/ja
Publication of WO2007125756A1 publication Critical patent/WO2007125756A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00Testing or calibrating of apparatus or devices covered by the preceding groups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0035Testing
    • B81C99/005Test apparatus
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2829Testing of circuits in sensor or actuator systems

Definitions

  • the present invention relates to an inspection apparatus and an inspection method for inspecting a micro structure, for example, MEMS (Micro Electro Mechanical Systems).
  • MEMS Micro Electro Mechanical Systems
  • MEMS which is a device that integrates various functions such as mechanical / electronic 'optical' chemistry, especially using semiconductor microfabrication technology
  • MEMS technologies that have been put to practical use so far include various sensors for automobiles and medical use, and MEMS devices have been mounted on acceleration sensors, pressure sensors, air flow sensors, and the like, which are microsensors.
  • MEMS technology for inkjet printer heads, it is possible to increase the number of nozzles that eject ink and to eject ink accurately, thereby improving image quality and increasing printing speed. It has become.
  • a micromirror array or the like that is used as a reflection type projector is also known as a general MEMS device.
  • Patent Document 1 Japanese Patent Laid-Open No. 5-34371
  • Patent Document 1 The technique of Patent Document 1 is capable of controlling the movement of the movable part with great force because the area from which the air flow is ejected is larger or uncontrolled than the movable part of the measurement target chip. Absent.
  • the back of the movable part is manufactured at the same height as the support part structure, it is necessary to displace the movable part in the upward direction.
  • the conventional technology since the conventional technology only has a spraying function, the movable part is directed upward in the wafer. It cannot be displaced.
  • the present invention has been made in view of such a situation, and for a microstructure having degrees of freedom in multiple directions, a dynamic test of characteristics in each direction of freedom without directly contacting the movable part is performed. It is to provide an inspection apparatus capable of performing the above.
  • a microstructure inspection apparatus is a microstructure inspection apparatus that has a movable part formed on a substrate and evaluates the characteristics of at least one microstructure.
  • a plurality of nodes disposed near the movable portion of the microstructure and ejecting or inhaling gas.
  • a gas flow rate control means for controlling a flow rate of gas ejected or sucked from the plurality of nozzles
  • the displacement of the movable part of the microstructure applied by the gas ejected or sucked from the plurality of nozzles is detected by an electrical signal obtained through the probe, and the characteristics of the microstructure are determined based on the detection result.
  • a probe card connected to the evaluation means,
  • a probe card including
  • One sound wave generating means is provided.
  • the gas flow rate control means may remove foreign matter adhering to the microstructure by controlling the flow rate of gas ejected or sucked from the plurality of nozzles.
  • the probe card further includes foreign matter detection means for detecting foreign matter attached to the microstructure, and the gas flow rate control means is configured to detect the foreign matter when the foreign matter is detected by the foreign matter detection means.
  • the foreign matter adhering to the microstructure may be removed by controlling the flow rate of the gas ejected or sucked from the nozzle.
  • the foreign object detection unit determines the presence and position of the foreign object by, for example, an image analysis unit.
  • the microstructure is an acceleration sensor formed on the substrate.
  • the microstructure is a device formed on a semiconductor wafer.
  • the microstructure inspection method according to the second aspect of the present invention in order to take out an electrical signal of at least one microstructure having a movable portion formed on a substrate, the microstructure is extracted. Contacting the probe with a pad formed on
  • a part of the movable portion has a nozzle force separating direction. Displacement and displacement in the direction approaching the nozzle can be given to the other part of the movable part. As a result, the characteristics of the microstructure can be inspected by changing the direction of displacement of the movable portion without directly contacting the movable portion of the microstructure.
  • FIG. 1 is a schematic configuration diagram of a microstructure inspection apparatus according to an embodiment of the present invention.
  • FIG. 2 is a block diagram showing a configuration of an inspection control unit and a prober unit of the resistance measurement system of FIG.
  • FIG. 3 is a view of the 3-axis acceleration sensor as viewed from the top surface of the device.
  • FIG. 4 is a schematic diagram of a three-axis acceleration sensor.
  • FIG. 5 is a conceptual diagram for explaining deformation of a heavy cone and a beam when subjected to acceleration in each axis direction.
  • FIG. 6 is a circuit configuration diagram of a Wheatstone bridge provided for each axis.
  • FIG. 7 is a diagram for explaining an output response with respect to an inclination angle of a three-axis acceleration sensor.
  • [8] It is a diagram for explaining the relationship between gravitational acceleration (input) and sensor output.
  • FIG. 9 A conceptual diagram showing the configuration of a nozzle and a wafer according to an embodiment of the present invention.
  • FIG. 10 is a conceptual diagram showing an example of the combination of nozzle ejection or suction directions and the direction of displacement of the movable part.
  • FIG. 11 is a conceptual diagram showing an example of the direction of displacement of a movable part when four nozzle forces are ejected.
  • FIG. 12 is a conceptual diagram showing an example of the direction of displacement of the movable part when one nozzle force air is ejected.
  • FIG. 13 is a conceptual diagram showing an example of the direction of displacement of the movable part when two nozzle forces are ejected.
  • FIG. 14 is a conceptual diagram showing an example of the direction of displacement of a movable part when four nozzle forces also suck air.
  • FIG. 15 is a conceptual diagram showing an example of the direction of displacement of a movable part when one nozzle force sucks air.
  • FIG. 16 is a conceptual diagram showing an example of the direction of displacement of a movable part when two nozzle forces also suck air.
  • FIG. 17 is a conceptual diagram showing an example of the combination of nozzle ejection or suction directions and the direction of displacement of the movable part.
  • FIG. 19 is a diagram showing different configurations of a probe and a nozzle.
  • FIG. 20 is a diagram for explaining the structure of a probe card according to the second modification of the embodiment of the present invention.
  • FIG. 22 is a diagram for explaining the structure of a probe card according to the third modification of the embodiment of the present invention.
  • FIG. 23 is a block diagram showing configurations of an inspection control unit and a prober unit of a resistance measurement system according to a third modification of the embodiment of the present invention.
  • FIG. 1 is a schematic configuration diagram of an inspection apparatus 1 according to an embodiment of the present invention.
  • Figure 1 is a schematic configuration diagram of an inspection apparatus 1 according to an embodiment of the present invention.
  • the inspection apparatus 1 includes a loader unit 12 for transferring a test object, for example, a wafer 8, a prober unit 15 for inspecting the electrical characteristics of the wafer 8, and an acceleration sensor formed on the wafer 8 via the prober unit 15. And an inspection control unit 2 for measuring characteristic values.
  • a loader unit 12 for transferring a test object, for example, a wafer 8, a prober unit 15 for inspecting the electrical characteristics of the wafer 8, and an acceleration sensor formed on the wafer 8 via the prober unit 15.
  • an inspection control unit 2 for measuring characteristic values.
  • the loader unit 12 includes, for example, a mounting unit (not shown) for mounting a cassette storing 25 wafers 8 and a wafer transfer for transferring the wafers 8 one by one from the cassette of the mounting unit. And a mechanism.
  • the wafer transfer mechanism moves in the three-axis direction via the X—Y — Z tables 12A, 12B, and 12C, which are three-axis orthogonal (X-axis, Y-axis, and Z-axis) movement mechanisms.
  • a main chuck 14 for rotating the wafer 8 around the Z axis is provided.
  • the Y table 12A that moves in the Y direction
  • the X table 12B that moves in the X direction on the Y table 12A
  • the Z table that is arranged with the center of the X table 12B and the axis aligned.
  • It has a Z table 12C that moves up and down, and moves the main chuck 14 in the X, Y, and ⁇ directions.
  • the main chuck 14 rotates in the forward and reverse directions within a predetermined range via a rotational drive mechanism around the shaft.
  • the prober unit 15 includes a probe card 4 and a probe control unit 13 that controls the probe card 4.
  • the probe card 4 includes an electrode pad 8a (see FIG. 9) formed of a conductive metal such as copper, copper alloy, or aluminum on a wafer 8 and an inspection probe 4a. Using the fritting phenomenon, the contact resistance between the electrode pad 8a and the probe 4a is reduced to make it electrically conductive.
  • the prober unit 15 includes a plurality of nozzles 10 (see FIG. 2) that eject or suck air into the movable unit 16a of the acceleration sensor 16 (see FIG. 9) formed on the wafer 8.
  • the probe control unit 13 controls the nozzle flow rate control unit connected to the probe 4a and the nozzle 10 of the probe card 4, and detects the predetermined displacement in the acceleration sensor 16 formed on the wafer 8, thereby allowing the acceleration sensor 16 to move.
  • the movement of the part 16a is detected as an electrical signal through the probe.
  • the prober unit 15 includes an alignment mechanism (not shown) that aligns the probe 4 a of the probe card 4 and the wafer 8.
  • the prober unit 15 arranges the tips of a plurality of nozzles 10 (see FIG. 9) to face the movable unit 16a of the acceleration sensor 16 of the wafer 8, and ejects or sucks gas from the nozzle 10 force gas. Displace the movable part 16a. Further, the prober unit 15 measures the characteristic value of the acceleration sensor 16 formed on the wafer 8 by bringing the probe 4a of the probe card 4 and the electrode pad 8a of the wafer 8 into electrical contact.
  • FIG. 2 is a block diagram showing configurations of the inspection control unit 2 and the prober unit 15 of the inspection apparatus 1 of FIG.
  • the inspection control unit 2 and the prober unit 15 constitute an acceleration sensor evaluation measurement circuit.
  • the inspection control unit 2 includes a control unit 21, a main storage unit 22, an external storage unit 23, an input unit 24, an input / output unit 25, and a display unit 26.
  • the main storage unit 22, the external storage unit 23, the input unit 24, the input / output unit 25, and the display unit 26 are all connected to the control unit 21 via the internal bus 20.
  • the control unit 21 includes a CPU (Central Processing Unit) and the like, and configures the characteristics of the sensor formed on the wafer 8, such as the resistance value of the resistor and the sensor, according to a program stored in the external storage unit 23. Execute the process to measure the current, voltage, etc. of the circuit.
  • CPU Central Processing Unit
  • the main storage unit 22 is composed of a RAM (Random-Access Memory) or the like, and loads a program stored in the external storage unit 23 and is used as a work area of the control unit 21.
  • RAM Random-Access Memory
  • the external storage unit 23 includes a ROM (Read Only Memory), a flash memory, a hard disk, a DVD-RAM (Digital Versatile Disc Random-Access Memory) DVD—RW (Digit al Versatile Disc Rewritable), which stores a program for causing the control unit 21 to perform the above processing in advance, and controls the data stored by this program according to instructions from the control unit 21 The data supplied to the unit 21 and stored from the control unit 21 are stored.
  • ROM Read Only Memory
  • flash memory a flash memory
  • hard disk a DVD-RAM (Digital Versatile Disc Random-Access Memory) DVD—RW (Digit al Versatile Disc Rewritable)
  • DVD-RAM Digital Versatile Disc Random-Access Memory
  • DVD—RW Digit al Versatile Disc Rewritable
  • the input unit 24 includes a pointing device such as a keyboard and a mouse, and an interface device that connects the keyboard and the pointing device to the internal bus 20.
  • the start of evaluation measurement, selection of measurement method, and the like are input via the input unit 24 and supplied to the control unit 21.
  • the input / output unit 25 includes a serial interface or a LAN (Local Area Network) interface connected to the probe control unit 13 to be controlled by the inspection control unit 2. Via the input / output unit 25, the probe control unit 13 is brought into contact with the electrode pad 8a of the wafer 8, electrical continuity, switching between them, and the gas jetted or sucked into the movable unit 16a of the acceleration sensor 16. Command the flow control. Moreover, the measurement result is input. The frequency response characteristic that is the measurement result is displayed.
  • LAN Local Area Network
  • the probe control unit 13 includes a nozzle flow rate control unit 3, a fritting circuit 5, a characteristic evaluation unit 6 and a switching unit 7.
  • the characteristic evaluation unit 6 supplies the probe card 4 with power for measuring the electrical signal of the acceleration sensor 16 and measures the current flowing through the acceleration sensor 16 and the voltage between the terminals.
  • the nozzle flow rate control unit 3 controls the flow rate of the gas ejected or sucked from the nozzle 10 in order to capture the displacement in the movable part 16a (see Fig. 9) of the acceleration sensor 16 formed on the wafer 8.
  • the A predetermined displacement is applied to the movable portion 16a of the acceleration sensor 16 by controlling the flow rate of the gas ejected or sucked from the plurality of nozzles 10, respectively.
  • the fritting circuit 5 supplies a current to the probe 4a of the probe card 4 brought into contact with the electrode pad 8a of the wafer 8, causing a fritting phenomenon between the probe 4a and the electrode pad 8a. And a circuit for reducing the contact resistance between the electrode pads.
  • the characteristic evaluation unit 6 measures and evaluates the characteristics of the microstructure. For example, by applying a static or dynamic displacement to the moving part 16a, the response of the acceleration sensor 16 is measured, and the designed reference Check if it is within range.
  • the switching unit 7 switches the connection between each probe 4 a of the probe card 4 and the fritting circuit 5 or the characteristic evaluation unit 6.
  • the three-axis acceleration sensor 16 of a microstructure that is a test object will be described first.
  • FIG. 3 is a view of the triaxial acceleration sensor 16 as seen from the top surface of the device.
  • the chip TP formed on the wafer 8 has a plurality of electrode pads PD arranged around it.
  • a metal wiring is provided in order to transmit an electric signal to or from the electrode pad PD.
  • four weights AR forming a clover type are arranged.
  • FIG. 4 is a schematic diagram of the triaxial acceleration sensor 16.
  • the triaxial acceleration sensor 16 shown in FIG. 4 is a piezoresistive type, and a piezoresistive element as a detection element is provided as a diffused resistor.
  • the piezoresistive acceleration sensor 16 can be manufactured by using an inexpensive IC process. Even if the resistance element, which is the detection element, is made small, the sensitivity does not decrease, which is advantageous for downsizing and cost reduction.
  • the central weight body AR is supported by four beams BM.
  • the beam BM is formed so as to be orthogonal to each other in the X-axis and Y-axis directions, and has four piezoresistive elements per axis.
  • the four piezoresistive elements for detecting the Z-axis direction are arranged beside the piezoresistive element for detecting the X-axis direction.
  • the top surface of the weight AR forms a crowbar shape and is connected to the beam BM at the center.
  • this piezoresistive three-axis acceleration sensor 16 is that when the weight AR receives acceleration (inertial force), the beam BM is deformed, and the resistance of the piezoresistive element formed on the surface thereof This is a mechanism for detecting acceleration by a change in resistance value. And this sensor output is set to take out from the output of the Wheatstone bridge incorporated in each of the three axes independently.
  • FIG. 5 is a conceptual diagram for explaining the deformation of the weight body and the beam when the acceleration in each axial direction is received. As shown in Fig.
  • the piezoresistive element has the property that its resistance value changes according to the applied strain (piezoresistive effect) .In the case of tensile strain, the resistance value increases and compressive strain is reduced. If the resistance value decreases.
  • X-axis direction piezoresistive elements Rxl to Rx4 Y-axis direction detecting piezoresistive elements Ryl to Ry4, and Z-axis direction detecting piezoresistive elements Rzl to Rz4 are shown as examples.
  • FIG. 6 is a circuit configuration diagram of a Wheatstone bridge provided for each axis.
  • Fig. 6 (a) is a circuit configuration diagram of the Wheatstone bridge in the X (Y) axis. The output voltages for the X and ⁇ axes are Vxout and Vyout, respectively.
  • Figure 6 (b) is a circuit configuration diagram of the Wheatstone bridge on the Z axis. The Z-axis output voltage is Vzout.
  • each piezoresistive element is, for example, on the X axis and the Y axis.
  • the acceleration component of each output axis of the circuit formed by the stone bridge is detected as an independent output voltage.
  • metal wiring or the like is connected, and an output voltage for each axis is detected from a predetermined electrode pad 8a.
  • the triaxial acceleration sensor 16 can also detect a DC component of acceleration, it can also be used as an inclination angle sensor for detecting gravitational acceleration.
  • the present invention can be applied to any device including the movable portion 16a.
  • it can be used for measurement of dynamic characteristics such as a pressure sensor.
  • a thin film device such as a strain gauge can be used for measuring characteristics by adding displacement.
  • FIG. 7 is a diagram for explaining an output response with respect to the tilt angle of the triaxial acceleration sensor 16.
  • the sensor was rotated around the X, ⁇ , and ⁇ axes, and the bridge output of each of the X, ⁇ ⁇ ⁇ ⁇ , and ⁇ axes was measured with a digital voltmeter.
  • a low-voltage power supply + 5V is used as the power supply for the sensor.
  • Each measurement point shown in Fig. 7 is plotted with the value obtained by arithmetically subtracting the zero point offset of each axis output.
  • FIG. 8 is a diagram illustrating the relationship between gravitational acceleration (input) and sensor output. Shown in Figure 8 The input / output relationship is calculated by calculating the heavy acceleration components related to the X, Y, and ⁇ axes from the cosine of the tilt angle in Fig. 7, and obtaining the relationship between the gravitational acceleration (input) and the sensor output. This is an evaluation of the linearity of the output. In other words, the relationship between acceleration and output voltage is almost linear.
  • an air flow is generated by the nozzle 10 with respect to the triaxial acceleration sensor 16 that is a microstructure.
  • the movement of the movable part 16a of the microstructure based on the air flow is detected and its characteristics are evaluated.
  • FIG. 9 is a conceptual diagram showing the configuration of the nozzle 10 and the wafer 8.
  • the wafer 8 is formed with an acceleration sensor 16 having a movable portion 16a, and an electrode pad 8a for taking out an electric signal of the acceleration sensor 16 is formed on the wafer 8.
  • the probe card 4 includes a plurality of probes 4a connected to the electrode pads 8a (FIG. 2).
  • the prober unit 15 of the inspection apparatus 1 includes a nozzle flow rate control unit 3 that generates an air flow with respect to the movable unit 16a of the acceleration sensor 16, and an air flow of the nozzle flow rate control unit 3 that is disposed near the movable unit 16a.
  • a nozzle 10 for jetting or sucking the movable part 16a of the acceleration sensor 16 is provided (FIG. 9).
  • the electrode pad 8a which is an inspection electrode electrically connected to the probe 4a, is formed in the peripheral region of the sensor. Therefore, the nozzle 10 can be provided in a region surrounded by the probe 4a so that the tip of the nozzle 10 is arranged near the movable portion 16a (weight body) near the center of the sensor.
  • the movable part 16a is a weight body AR or beam BM, or a film when the sensor has a membrane (film) structure.
  • the nozzle 10 is connected to the switching valve 30 of the nozzle flow rate control unit 3 through a tube through which air passes.
  • the nozzle flow rate control unit 3 includes a compressed air source 33 and a vacuum source 34.
  • the compressed air source 33 and the vacuum source 34 are connected to the switching valve 30 via the flow rate controller A31 and the flow rate controller B32, respectively.
  • the flow rate controller A31 controls the flow rate of air ejected from the nozzle 10.
  • the flow rate controller B32 controls the flow rate of air sucked from the nozzle 10.
  • the switching valve 30 is connected to the nozzle 10 by switching between the compressed air source 33 and the vacuum source 34. Compressed air with switching valve 30 When the air source 33 and the nozzle 10 are connected, air is ejected from the nozzle 10. When the switching valve 30 connects the vacuum source 34 and the nozzle 10, air is sucked from the nozzle 10.
  • the plurality of nozzles 10 are connected to different nozzle flow rate control units 3, respectively. Each of the plurality of nozzles 10 is independently controlled by switching between air ejection or suction and its flow rate.
  • the movable part 16a can be displaced in the direction of an arbitrary degree of freedom of the calorie velocity sensor 16 by combining the direction of ejection or suction of each of the plurality of nozzles 10 and the flow rate thereof.
  • the flow of air ejected or drawn from the nozzle 10 may be varied without being limited to a certain amount. For example, for one nozzle 10, ejection and suction can be switched alternately.
  • the movable part 16a can be displaced oscillatingly by changing the flow rate of ejection or suction pulsatingly.
  • FIGS. 10 to 17 are conceptual diagrams showing examples of combinations of ejection or suction directions of the nozzle 10 and displacement directions of the movable portion 16a.
  • FIGS. 10 to 17 show the weight AR with the positive directional force of the Z axis.
  • the black circles surrounded by circles represent the flow of air that is directed toward the surface.
  • the X mark surrounded by a circle represents the flow of air from the front to the back of the page.
  • FIG. 10 shows a case where air is sucked from the two right nozzles 10 and air is ejected from the two left nozzles 10.
  • the left side of the weight AR is displaced in the negative Z-axis direction
  • the right side is displaced in the positive Z-axis direction.
  • the beam BM in the Y-axis direction is twisted counterclockwise when the Y-axis is viewed in the positive direction.
  • FIG. 11 shows a case where air is ejected from the four nozzles 10.
  • the weight body AR When air is evenly ejected from the four nozzles 10, the weight body AR is displaced in the negative Z-axis direction as a whole. In that case, the beam BM is not twisted. If the flow rate from the four nozzles 10 is changed, the weight AR will be displaced in the negative direction of the Z-axis as a whole while tilting.
  • FIG. 12 shows that air is ejected from one nozzle 10, and the flow rate of air from the other three nozzles 10 is Indicates no case.
  • Weight AR is a force that moves in the negative direction of the Z-axis as a whole The force acting on the weight AR is biased, so the beam BM in the Y-axis is counterclockwise when the Y-axis is viewed in the positive direction. Twisting around, the beam BM in the X axis is twisted clockwise with the X axis in the positive direction.
  • FIG. 13 shows a case where air is ejected from the two nozzles 10 and there is no air flow rate of the other two nozzles 10. Since the negative side of the weight body AR is pushed in the negative direction of the Z axis, the weight body AR is displaced in the negative direction of the Z axis as a whole.
  • the beam BM in the Y axis direction looks at the Y axis in the positive direction. Twist counterclockwise.
  • FIG. 14 shows a case where air is sucked from the four nozzles 10.
  • the weight body AR When air is evenly drawn from the four nozzles 10, the weight body AR is displaced in the positive direction of the Z axis as a whole. In that case, the beam BM is not twisted.
  • the weight body AR When a change is made to the flow rate sucked from the four nozzles 10, the weight body AR is displaced in the positive direction of the Z axis as a whole while tilting.
  • the movable part 16a may not be displaced in the lower surface direction of the wafer 8. In that case, the movable part 16a cannot be displaced by the conventional method of inspecting by blowing air. However, in the method of the present invention, the movable part 16a can be displaced by sucking air from the nozzle 10. .
  • FIG. 15 shows a case where air is sucked from one nozzle 10 and there is no air flow rate of the other three nozzles 10.
  • Weight AR is a force that moves in the positive direction of the Z-axis as a whole The force acting on the weight AR is biased, so the beam BM in the Y-axis rotates clockwise when the Y-axis is viewed in the positive direction.
  • the beam BM in the X-axis direction is twisted counterclockwise when the X-axis is viewed in the positive direction.
  • FIG. 16 shows a case where air is sucked from the two nozzles 10 and there is no air flow rate of the other two nozzles 10. Since the negative X-axis side of the weight body AR is attracted in the positive Z-axis direction, the weight body AR as a whole is displaced in the positive Z-axis direction. The beam BM in the Y-axis direction looks at the Y-axis in the positive direction. Twist clockwise.
  • FIG. 17 shows a case where air is ejected from one nozzle and sucked from the other nozzle with two nozzles 10 positioned on the diagonal line of the weight body AR.
  • the beam BM in the Y-axis direction is twisted clockwise when the Y-axis is viewed in the positive direction
  • the beam BM in the X-axis direction is twisted counterclockwise when the X-axis is viewed in the positive direction.
  • the center of gravity of the weight AR is A displacement in the torsional direction can be applied without displacement.
  • FIGS. 10 to 17 are examples of combinations of ejection or suction of the nozzle 10, and are not limited to these combinations. Any other combination is possible. Further, as described above, the direction of ejection or suction from the nozzle 10 may be switched, or the air flow rate may be changed. Note that the number of nozzles 10 is not limited to four for one movable part 16a. Two, three, or five or more nozzles 10 may be provided.
  • the movable portion 16a can be displaced in various directions depending on the combination of the direction in which the gas is ejected or sucked from the plurality of nozzles 10 to the movable portion 16a and the flow rate.
  • the inspection device 1 can inspect the characteristics of the acceleration sensor 16 in each direction of freedom.
  • a fritting phenomenon is used to reduce the needle pressure while keeping the contact resistance low.
  • a pair of two probes 4a is brought into contact with one electrode pad 8a.
  • the probe card 4 is connected to the fritting circuit 5, and current is supplied to the probe 4a of the probe card 4 that is in contact with the electrode pad 8a of the wafer 8.
  • a fritting phenomenon occurs between the probe 4a and the electrode pad 8a to reduce the contact resistance.
  • the switching unit 7 is switched to connect the probe card 4 to the characteristic evaluation unit 6.
  • the inspection control unit 2 of the inspection apparatus 1 controls the alignment mechanism of the prober unit 15 to bring the probe 4 a into contact with the electrode pad 8 a of the wafer 8.
  • the nozzle 10 is disposed in the vicinity of the movable portion 16a of the acceleration sensor 16.
  • the direction and magnitude of the displacement applied to the movable part 16a are controlled to be a predetermined value, and the response of the acceleration sensor 16 is detected.
  • the response characteristic of the acceleration sensor 16 can be examined.
  • a fluctuation component may be added to the displacement received by the movable part 16a.
  • pseudo white noise in a predetermined frequency range may be used as the displacement applied to the movable part 16a. If white noise is regarded as vibration, response characteristics in that frequency range can be examined without examining the response while changing the excitation frequency.
  • FIG. 18 is a flowchart showing an example of the operation of the inspection apparatus 1 according to the embodiment of the present invention.
  • the operation of the inspection control unit 2 is performed by the control unit 21 in cooperation with the main storage unit 22, the external storage unit 23, the input unit 24, the input / output unit 25, and the display unit 26.
  • the inspection control unit 2 first waits for the wafer 8 to be placed on the main chuck 14 and the start of measurement input (step Sl).
  • a measurement start command is input from the input unit 24 and is instructed to the control unit 21, the control unit 21 contacts the probe control unit 13 with the probe 4a via the input / output unit 25 and the electrode pad 8a of the wafer 8.
  • the nozzle 10 is disposed at a predetermined position in the vicinity of the movable portion 16a of the acceleration sensor 16.
  • the probe controller 13 is instructed by the fritting circuit 5 to make the probe 4a and the electrode pad 8a conductive (step S3).
  • the contact resistance between the electrode pad 8a and the probe 4a is reduced using the fritting phenomenon, but a method other than the fritting technique is used as a method for reducing the contact resistance and conducting. May be used.
  • a method of reducing the contact resistance between the electrode pad 8a and the probe 4a by conducting ultrasonic waves to the probe 4a and partially breaking the oxide film on the surface of the electrode node 8a.
  • the selection of the measurement method is input (step S4).
  • the measurement method may be stored in advance in the external storage unit 23 or may be input from the input unit 24 each time measurement is performed.
  • the measurement circuit used by the input measurement method and the movable part 16 Set the direction and magnitude (and frequency, etc.) of the displacement applied to a (Step 5).
  • independent parallel displacement in each direction of freedom of the acceleration sensor 16 independent torsional displacement in each direction of freedom, combined displacement in each direction of freedom, each direction of freedom
  • combination displacement of torsion There is a combination displacement of torsion.
  • frequency sweep inspection frequency scan
  • white noise detection that inspects the response by applying pseudo white noise in a predetermined frequency range
  • linearity test that checks the response by changing the amplitude of the displacement while fixing the frequency to a predetermined value.
  • the nozzle flow rate control unit 3 is controlled by the set measurement method to detect the electric signal that is the response of the acceleration sensor 16 from the probe 4a while displacing the movable unit 16a of the acceleration sensor 16. Then, the response characteristic of the acceleration sensor 16 is inspected (step S6). Then, the detected measurement result is stored in the external storage unit 23, and at the same time, the measurement result is displayed on the display unit 26 (step S7).
  • the movable part 16a of the acceleration sensor 16 is displaced by the flow of gas ejected or sucked from the plurality of nozzles 10 disposed in the vicinity of the acceleration sensor 16, even a sensor having a plurality of degrees of freedom is free. Inspections can be performed at every degree or with a combination of directions of freedom. Also, compared to the method of inspecting the displacement of the movable part 16a by blowing air, the displacement can be controlled in the direction of sucking the movable part 16a. Even if there are restrictions, inspection on the wafer 8 is possible.
  • FIG. 19 is a diagram showing different configurations of the probe 4a and the nozzle 10.
  • the probe card 4 has a plurality of nozzles 10!
  • the arrangement of the probe 4a and the nozzle 10 is adjusted in advance.
  • the nozzle 10 is simultaneously placed at a predetermined position with respect to the movable portion 16a.
  • FIG. 20 is a diagram illustrating the structure of the probe card according to the second modification of the first embodiment of the present invention.
  • a probe card 4 shown in FIG. 20 includes a speaker 9 that outputs test sound waves in addition to the probe card 4 of the first modification.
  • the test sound wave output from the speaker 9 passes through the opening region 4b and is received by the movable part 16a.
  • the test sound wave vibrates the micro structure, for example, the movable part 16a of the calo speed sensor 16. It is possible to inspect the frequency characteristics of the acceleration sensor 16 by detecting the signal of the acceleration sensor 16 while vibrating the movable part 16a with the test sound wave.
  • the frequency characteristics can be inspected continuously from a constant displacement (DC component) to a high frequency.
  • a combined inspection such as inspecting a change in frequency characteristics by monitoring the vibration of the test sound wave of the speaker 9 while giving a constant displacement by the air flow of the nozzle 10.
  • the speaker 9 is supported on the probe card 4 by a support member, and the support member can be formed of a vibration-proof material (vibration-proof material) 70.
  • the nozzle 10 passes between the vibration isolating material 70.
  • the anti-vibration material 70 silicon rubber or grease can be used.
  • a test sound wave applied from the speaker 9 to the acceleration sensor 16 may be detected by providing a microphone (not shown) around the opening region 4b.
  • the test sound wave output from the speaker 9 is controlled so that the acoustic signal detected by the microphone has a predetermined frequency characteristic.
  • a test sound wave having a predetermined frequency characteristic can be applied to the movable part 16a.
  • FIG. 21 is a flowchart showing an example of the operation of the inspection apparatus 1 according to the embodiment of the present invention in Modification 3 of Embodiment 1 of the present invention.
  • This operation is an operation in which foreign matter such as dust or dust adheres to the acceleration sensor 16, and the foreign matter is blown out or sucked by a gas ejected or sucked from the nozzle 10.
  • the operation shown in this flowchart is executed as needed in the microstructure inspection (mainly step 6) shown in the flowchart of FIG.
  • the movable part 16a may not move at all or hardly. At this time, there is a possibility that both the possibility that the sensor is originally a defective product and the possibility that the clogging or the like in the vicinity of the movable portion 16a is merely caused by a foreign matter.
  • the acceleration sensor 16 corresponding to the former will be referred to as an original defective product, and the sensor corresponding to the latter will be referred to as an apparent defective product.
  • the inspection apparatus 1 includes a nozzle 10, and gas is ejected or sucked by the nozzle.
  • the powerful gas ejection or suction is originally performed to give displacement to the movable part 16a.
  • the inspection apparatus 1 has the potential ability to perform a kind of cleaning work, that is, the removal of foreign matters attached to the acceleration sensor 16 in parallel with the inspection. is doing.
  • a kind of cleaning work that is, the removal of foreign matters attached to the acceleration sensor 16 in parallel with the inspection. is doing.
  • apparently defective products for example, those in which very light dust is simply caught in the vicinity of the movable portion 16a, can be avoided from being treated as defective as a result of the removal of the dust.
  • at least a part of the apparently defective products that were conventionally treated as defective products uniformly without being distinguished from the original defective products are treated as defective products. Expected to escape. Therefore, according to this modification, it is expected that the yield in manufacturing the acceleration sensor 16 will be improved.
  • step S13 the displacement is determined using the minimum value as a threshold value (step S13). If the displacement is less than or equal to the threshold value, in principle, it is regarded as a defective product (Step S13; Yes and Step S17; No). On the other hand, when the displacement exceeds the threshold value (step S13; No), at least in this operation, the product can be dealt with as a defective product.
  • step S13 The feature of this modification is in the procedure after it is determined in step S13 that the displacement of the movable portion 16a is equal to or less than a predetermined threshold (step S13; Yes).
  • the test control unit 2 tries to generate a gas flow having a predetermined intensity around the movable unit 16a by the nozzle 10 as a test (step S11).
  • the inspection control unit 2 determines whether or not a displacement corresponding to the strength of the gas flow has occurred in the movable unit 16a via the probe 4a (step S13).
  • a predetermined threshold is used as a criterion for discrimination.
  • Step S13 If it is determined that the displacement of the movable part exceeds the predetermined threshold (Step S13; No), the acceleration of the inspection object is limited only within the range of the foreign object detection and removal operation shown in the flowchart of FIG. The process ends without determining that the sensor 16 is defective.
  • the inspection control unit 2 immediately sets the acceleration sensor 16 to be inspected.
  • the inspection control unit 2 attempts to detect a foreign object using, for example, a camera 81, a camera control unit 85, and an image analysis unit 87 described later (step S15).
  • the inspection control unit 2 determines whether or not the force has detected a foreign object (step S17). If it is determined that the foreign object has not been detected (step S17; No), the inspection control unit 2 determines that the acceleration sensor 16 to be inspected is an original defective product (step S19) and performs processing. Exit.
  • the inspection control unit 2 attempts to remove the foreign object (step S21). Specifically, the inspection control unit 2 attempts to blow off or suck out foreign matter by generating a gas flow with the nozzle 10 based on an analysis result by an image analysis unit 87 described later.
  • the inspection apparatus 1 includes a plurality of nozzles. Therefore, the position of the foreign object is determined by image analysis, and the position of the foreign object is concentrated in that position and in various directions. It is possible to create a gas flow and attempt to remove foreign matter. As a result, the efficiency of removing the foreign matter is improved as compared with a method of simply blowing the gas on the acceleration sensor 16 indiscriminately.
  • step S23 the inspection control unit 2 tries to detect foreign matter. This attempt is essentially a retry of step S15.
  • the inspection control unit 2 determines whether or not a foreign object has been detected as a result of intensive retry (step S25). This determination is the same as step S17.
  • step S25 The case where it is determined that a foreign substance has been detected (step S25; Yes) means that the foreign substance cannot be removed depending on the flow of gas generated by the nozzle 10. Therefore, the inspection control unit 2 determines that the acceleration sensor 16 to be inspected cannot remove foreign matter (step S27), and ends the process.
  • step S27 the acceleration sensor determined to be unable to remove foreign matter in step S27 has foreign matter attached but could not be removed. It has not been concluded whether it is an apparently defective product, and in this sense it can be said to be in a kind of pending state. Therefore, it is reasonable to distinguish it from the conclusion of step S19 that it is an original defective product.
  • the inspection control unit 2 distinguishes in this way, for example, by leaving a record in the external storage unit 23, so that the accelerometer 16 in the above-described holding state will later try to remove the foreign matter again by another method. You can leave room.
  • step S25; No when it is determined that foreign matter is no longer detected (step S25; No), the process returns to step SI1 and tries to give displacement to the movable portion 16a again. Thereafter, in step S13, it is determined whether the displacement is insufficient. If it is determined that the displacement is sufficient (step S13; No), the process is terminated. This means that the foreign matter is actually removed by the foreign matter removal trial (step S21), and as a result, the acceleration sensor 16 operates normally. That is, the sensor was initially an apparently defective product. On the other hand, if it is determined that the displacement is insufficient (step S13; Yes), a third foreign object detection trial and determination (step S15 and step S17) is performed just in case, but the step has already been performed.
  • Step S17 Since it is determined that no foreign matter was detected in S25, no foreign matter should be detected unless there is a special circumstance such as a new foreign matter attached in a very short time from step S25 to step S17. (Step S17; No), and after determining that it is an original defective product (Step S19), the process ends.
  • FIG. 22 schematically shows an example of the installation method of the camera 81 for observing the adhesion state of foreign matter on the acceleration sensor 16a.
  • the camera 81 is installed on the probe card 4 via the support portion 83 in such a manner that the speaker 9 in FIG.
  • FIG. 22 is a schematic diagram to the last, and it is not necessary that the main body of the camera 81 is actually installed as illustrated. What is important is that the acceleration sensor 16 can be observed through the opening region 4b. For example, a fiber scope may be actually connected to the support portion 83. Alternatively, the entire wafer 8 can be observed by the camera 81 independently of the probe card 4.
  • FIG. 23 is a block diagram showing a configuration of the inspection control unit 2 and the prober unit 15 of the inspection apparatus 1 in the present modification. Force for shifting the position of some functional blocks for the sake of drawing Basically, the block diagram shown in Fig. 2 is added with camera 81, camera control unit 85, and image analysis unit 87 It is.
  • the camera control unit 85 is directly connected to the camera 81, and performs positioning of the camera 81, transmission of an imaging command, image acquisition, and the like.
  • the image analysis unit 87 performs image analysis for foreign object detection based on the image acquired by the camera control unit 85 from the camera 81.
  • the camera control unit 85 and the image analysis unit 87 exchange data and commands with the input / output unit 25 in the inspection control unit 2.
  • the image analysis unit 87 is drawn outside the inspection control unit 2, but the image analysis unit 87 may be stored as a program in the external storage unit 23 in the inspection control unit 2. Good. Then, the control unit 21 may function as the image analysis unit 87 by reading and executing the program as necessary.
  • the gas that is ejected or sucked from the nozzle 10 may be a gas necessary for the atmosphere inside the inspection device 1, such as nitrogen, in addition to air.
  • the inspection control unit 2 of the inspection apparatus 1 can be realized by using a normal computer system without depending on a dedicated system.
  • a computer program for executing the above-described operation is recorded on a computer-readable recording medium (flexible disk, CD-ROM,
  • the inspection control unit 2 that executes the above-described processing may be configured by storing and distributing the program on a DVD-ROM or the like and installing the computer program in the computer.
  • the computer program may be stored in a storage device of a server device on a communication network such as the Internet, and the inspection control unit 2 of the present invention may be configured by being downloaded by a normal computer system. ⁇ .
  • the flow of gas can be precisely controlled by using a plurality of nozzles, and the movable part of the microstructure can be freely displaced by the flow to inspect the microstructure in various manufacturing processes. It can also be applied to applications.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
PCT/JP2007/058069 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法 Ceased WO2007125756A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/282,744 US20090039908A1 (en) 2006-04-26 2006-04-12 Microstructure inspecting apparatus and microstructure inspecting method
JP2008513136A JPWO2007125756A1 (ja) 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006122160 2006-04-26
JP2006-122160 2006-04-26

Publications (1)

Publication Number Publication Date
WO2007125756A1 true WO2007125756A1 (ja) 2007-11-08

Family

ID=38655289

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/058069 Ceased WO2007125756A1 (ja) 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法

Country Status (5)

Country Link
US (1) US20090039908A1 (enExample)
JP (1) JPWO2007125756A1 (enExample)
KR (1) KR101019080B1 (enExample)
TW (1) TW200806967A (enExample)
WO (1) WO2007125756A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009071596A1 (de) * 2007-12-08 2009-06-11 X-Fab Semiconductor Foundries Ag Testen von mechanisch-elektrischen eigenschaften mikroelektro-mechanischer sensoren (mems)
JP2022065875A (ja) * 2020-10-16 2022-04-28 株式会社昭和真空 測定装置及び測定方法
US20240125817A1 (en) * 2022-10-17 2024-04-18 The Boeing Company Tilt calibration for probe systems
JP2024116202A (ja) * 2019-10-11 2024-08-27 浜松ホトニクス株式会社 ミラーデバイスの製造方法
JP2024543021A (ja) * 2021-11-02 2024-11-19 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Mems装置の動的パラメータを特定する方法および装置、ならびにmems装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5038191B2 (ja) * 2008-03-04 2012-10-03 有限会社共同設計企画 電子部品検査方法およびそれに用いられる装置
CN102301462A (zh) * 2009-02-12 2011-12-28 株式会社爱德万测试 半导体晶片测试装置
US20130283914A1 (en) * 2011-01-20 2013-10-31 Panasonic Corporation Acceleration sensor
TWI460402B (zh) * 2011-08-17 2014-11-11 Hon Tech Inc Electronic unit testing machine
EP2977811A1 (de) * 2014-07-25 2016-01-27 Trumpf Laser Marking Systems AG System mit einem piezoresistiven Positionssensor
US9527731B2 (en) * 2014-10-15 2016-12-27 Nxp Usa, Inc. Methodology and system for wafer-level testing of MEMS pressure sensors
US10605831B2 (en) * 2017-10-05 2020-03-31 International Business Machines Corporation Tool for automatically replacing defective pogo pins
US11047880B2 (en) 2019-01-16 2021-06-29 Star Technologies, Inc. Probing device
CN114460437A (zh) * 2021-12-23 2022-05-10 苏州伊欧陆系统集成有限公司 一种应用于探针台的自动喷液保护测试系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
JPH0933567A (ja) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd 半導体加速度センサのセンサチップ検査方法及び検査装置
JPH10123172A (ja) * 1996-10-21 1998-05-15 Fuji Electric Co Ltd 物理量センサの校正方法と校正装置
JPH11218548A (ja) * 1998-02-03 1999-08-10 Mitsubishi Electric Corp プローブカード
JP2001033506A (ja) * 1999-07-27 2001-02-09 Hioki Ee Corp 基板検査装置
JP2003273174A (ja) * 2002-03-12 2003-09-26 Seiko Instruments Inc 半導体検査装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232332A (ja) * 1985-08-05 1987-02-12 Toyota Central Res & Dev Lab Inc 圧力検出素子の検定方法及び装置
JPH0439555Y2 (enExample) * 1986-04-21 1992-09-16
JPH0774219A (ja) * 1993-08-31 1995-03-17 Kurisutaru Device:Kk プローブ基板およびその製造方法並びにプローブ装置
US6232790B1 (en) * 1999-03-08 2001-05-15 Honeywell Inc. Method and apparatus for amplifying electrical test signals from a micromechanical device
JP2001264185A (ja) * 2000-03-21 2001-09-26 Nikon Corp レチクルのメンブレンの内部応力測定方法及び装置、並びに半導体デバイスの製造方法
JP4456325B2 (ja) * 2002-12-12 2010-04-28 東京エレクトロン株式会社 検査方法及び検査装置
JP2005286050A (ja) * 2004-03-29 2005-10-13 Sharp Corp 半導体ウエハの検査方法および検査装置
JP4573794B2 (ja) * 2005-03-31 2010-11-04 東京エレクトロン株式会社 プローブカードおよび微小構造体の検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
JPH0933567A (ja) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd 半導体加速度センサのセンサチップ検査方法及び検査装置
JPH10123172A (ja) * 1996-10-21 1998-05-15 Fuji Electric Co Ltd 物理量センサの校正方法と校正装置
JPH11218548A (ja) * 1998-02-03 1999-08-10 Mitsubishi Electric Corp プローブカード
JP2001033506A (ja) * 1999-07-27 2001-02-09 Hioki Ee Corp 基板検査装置
JP2003273174A (ja) * 2002-03-12 2003-09-26 Seiko Instruments Inc 半導体検査装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009071596A1 (de) * 2007-12-08 2009-06-11 X-Fab Semiconductor Foundries Ag Testen von mechanisch-elektrischen eigenschaften mikroelektro-mechanischer sensoren (mems)
JP2024116202A (ja) * 2019-10-11 2024-08-27 浜松ホトニクス株式会社 ミラーデバイスの製造方法
JP7741246B2 (ja) 2019-10-11 2025-09-17 浜松ホトニクス株式会社 ミラーデバイスの製造方法
JP2022065875A (ja) * 2020-10-16 2022-04-28 株式会社昭和真空 測定装置及び測定方法
JP7520356B2 (ja) 2020-10-16 2024-07-23 株式会社昭和真空 測定装置
JP2024543021A (ja) * 2021-11-02 2024-11-19 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Mems装置の動的パラメータを特定する方法および装置、ならびにmems装置
JP7689248B2 (ja) 2021-11-02 2025-06-05 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Mems装置の動的パラメータを特定する方法および装置、ならびにmems装置
US20240125817A1 (en) * 2022-10-17 2024-04-18 The Boeing Company Tilt calibration for probe systems
US12216140B2 (en) * 2022-10-17 2025-02-04 The Boeing Company Tilt calibration for probe systems

Also Published As

Publication number Publication date
KR20080088638A (ko) 2008-10-02
TW200806967A (en) 2008-02-01
TWI331676B (enExample) 2010-10-11
KR101019080B1 (ko) 2011-03-07
US20090039908A1 (en) 2009-02-12
JPWO2007125756A1 (ja) 2009-09-10

Similar Documents

Publication Publication Date Title
WO2007125756A1 (ja) 微小構造体の検査装置、及び微小構造体の検査方法
WO2008053929A1 (en) Apparatus for inspecting fine structure, method for inspecting fine structure and substrate holding apparatus
CN101151540B (zh) 微小结构体的探针卡、微小结构体的检查装置以及检查方法
JP4387987B2 (ja) 微小構造体の検査装置、微小構造体の検査方法および微小構造体の検査プログラム
CN101133320A (zh) 微小结构体的检查装置、检查方法、以及检查程序
JP4573794B2 (ja) プローブカードおよび微小構造体の検査装置
JP2006078435A (ja) 微小構造体の検査装置および微小構造体の検査方法
CN105699695B (zh) 用于测试旋转速率传感器的功能的方法
TWI300844B (enExample)
JP2007147575A (ja) ホイートストンブリッジの抵抗測定システム、抵抗測定回路、抵抗測定方法及びコンピュータプログラム
TWI338138B (enExample)
JP4856426B2 (ja) 微小構造体の検査装置、及び微小構造体の検査方法
JP2010048599A (ja) 微小構造体の検査装置および微小構造体の検査方法
JP2010048597A (ja) 微小構造体の検査装置および微小構造体の検査方法
JPWO2007018186A1 (ja) 微小構造体の検査装置,検査方法および検査プログラム
JP2006284553A (ja) 微小構造体の検査装置、微小構造体の検査方法および微小構造体の検査プログラム
JP2007040704A (ja) 半導体装置、半導体装置の製造方法、半導体装置の製造方法プログラムおよび半導体製造装置
JP2006284552A (ja) 微小構造体の検査装置、微小構造体の検査方法および微小構造体の検査プログラム

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07741505

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008513136

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020087020119

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 12282744

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07741505

Country of ref document: EP

Kind code of ref document: A1