WO2007122225A1 - Process furnace or the like. - Google Patents

Process furnace or the like. Download PDF

Info

Publication number
WO2007122225A1
WO2007122225A1 PCT/EP2007/053973 EP2007053973W WO2007122225A1 WO 2007122225 A1 WO2007122225 A1 WO 2007122225A1 EP 2007053973 W EP2007053973 W EP 2007053973W WO 2007122225 A1 WO2007122225 A1 WO 2007122225A1
Authority
WO
WIPO (PCT)
Prior art keywords
furnace
reactive
heating
zone
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/053973
Other languages
English (en)
French (fr)
Inventor
Laurent Lanvin
Philippe Jouannard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Safran Landing Systems SAS
Original Assignee
Messier Bugatti SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messier Bugatti SA filed Critical Messier Bugatti SA
Priority to JP2009507056A priority Critical patent/JP5567332B2/ja
Priority to CA002649986A priority patent/CA2649986A1/en
Priority to MX2008013643A priority patent/MX2008013643A/es
Priority to BRPI0711411-7A priority patent/BRPI0711411A2/pt
Priority to AU2007242730A priority patent/AU2007242730B2/en
Publication of WO2007122225A1 publication Critical patent/WO2007122225A1/en
Priority to IL194837A priority patent/IL194837A0/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

Definitions

  • the present invention most generally relates to ovens, furnaces, process
  • VI/CVD infiltration/chemical vapor deposition
  • porous brake introduced as part of a process of density ing porous elements, such as porous brake
  • example in this regard is the process of chemical vapor infiltration, in which a
  • a conventional furnace includes an outermost furnace shell, a
  • the reactive gas is caused, in a known manner, to infiltrate the porous
  • the reactive gas can be a hydrocarbon gas, such as
  • a reactive gas is introduced into an interior volume
  • reaction chamber in a furnace.
  • the gas is caused to move from the
  • At least the interior of the reaction chamber is heated by the heating system.
  • the porous structure In the case of a hydrocarbon gas, for example, the
  • decomposition product is pyrolytic carbon, so that a carbon composite material (such as
  • An example of a conventional heating system for such furnaces is an inductive
  • requisite magnetic field such as one or more electrical coils placed operatively
  • Another conventional heating system is resistive heating, in which an electrical
  • the reactive gas is usually a precursor gas
  • a decomposition product such as a carbide or carbon deposit.
  • the present invention contemplates defining a zone in a CVI/CVD
  • the isolated zone (sometimes referred to herein as the
  • resistive heating system within the present invention as contemplated.
  • a susceptor is generally a structure that becomes heated in the
  • conduit 26 that crosses the furnace wall 12 from the exterior.
  • conduit 26 is at least aligned with gas inlet passage 24 and may be fixed thereto or
  • conduit 26 is suggested by the arrow labeled A in Figure 1.
  • furnace defined by shell 12 may be partitioned so as to define the above-mentioned
  • annular "plank” or wall 32 is
  • An inert gas such as argon or nitrogen, is supplied to the heating zone by
  • controller 42 (preferably, an automatic valve controller) so that the inert gas flow D
  • heating zone and more specifically, about +1 to about +2 millibars in favor of the
  • the heating zone particularly at the wall 32. This determination could be used to determine the heating zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PCT/EP2007/053973 2006-04-25 2007-04-24 Process furnace or the like. Ceased WO2007122225A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009507056A JP5567332B2 (ja) 2006-04-25 2007-04-24 Ｃｖｉ／ｃｖｄ炉
CA002649986A CA2649986A1 (en) 2006-04-25 2007-04-24 Process furnace or the like.
MX2008013643A MX2008013643A (es) 2006-04-25 2007-04-24 Horno de proceso o similar.
BRPI0711411-7A BRPI0711411A2 (pt) 2006-04-25 2007-04-24 forno de processo ou congêneres
AU2007242730A AU2007242730B2 (en) 2006-04-25 2007-04-24 Process furnace or the like.
IL194837A IL194837A0 (en) 2006-04-25 2008-10-22 Process furnace or the like

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0651455 2006-04-25
FR0651455A FR2900226B1 (fr) 2006-04-25 2006-04-25 Four de traitement ou analogue

Publications (1)

Publication Number Publication Date
WO2007122225A1 true WO2007122225A1 (en) 2007-11-01

Family

ID=37116170

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/053973 Ceased WO2007122225A1 (en) 2006-04-25 2007-04-24 Process furnace or the like.

Country Status (15)

Country Link
US (1) US20070256639A1 (https=)
EP (1) EP1849889A1 (https=)
JP (1) JP5567332B2 (https=)
KR (1) KR20080111154A (https=)
CN (1) CN101063195A (https=)
AU (1) AU2007242730B2 (https=)
BR (1) BRPI0711411A2 (https=)
CA (1) CA2649986A1 (https=)
FR (1) FR2900226B1 (https=)
IL (1) IL194837A0 (https=)
MX (1) MX2008013643A (https=)
RU (1) RU2421544C2 (https=)
TW (1) TW200746876A (https=)
UA (1) UA94098C2 (https=)
WO (1) WO2007122225A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101178046B1 (ko) * 2009-03-23 2012-08-29 한국실리콘주식회사 폴리실리콘 제조용 화학기상증착 반응기
CN102374780A (zh) * 2010-08-12 2012-03-14 北京大方科技有限责任公司 一种平焰炉的结构设计方案
WO2013055921A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Deposition system
CN102534567B (zh) 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法
FR2993044B1 (fr) * 2012-07-04 2014-08-08 Herakles Dispositif de chargement et installation pour la densification de preformes poreuses tronconiques et empilables
FR2993555B1 (fr) * 2012-07-19 2015-02-20 Herakles Installation d'infiltration chimique en phase vapeur a haute capacite de chargement
CN102889791B (zh) * 2012-09-27 2014-11-19 北京七星华创电子股份有限公司 炉体排风控制装置
CN105862013B (zh) * 2016-06-17 2018-07-06 南京大学 一种应用于小型mocvd系统的高温加热装置
CN107151779B (zh) * 2017-05-27 2019-04-16 西华大学 渗氮可控的零污染离子氮化装置
CN109197927B (zh) * 2018-08-31 2020-12-04 东莞市华美食品有限公司 一种基于物联网控制的食品智能烘烤系统
CN110242969B (zh) * 2019-05-23 2020-12-01 北京科技大学 一种焚硫炉
CN115094402B (zh) * 2022-06-24 2023-04-11 清华大学 一种立式双温区-双通道化学气相沉积设备
CN121023471B (zh) * 2025-10-29 2026-02-13 湖南顶立科技股份有限公司 一种用于cvd沉积设备的复合加热系统、协同控制方法及其在制备碳化钽涂层中的应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995016803A1 (fr) * 1993-12-16 1995-06-22 Societe Europeenne De Propulsion Procede de densification de substrats poreux
US6228174B1 (en) * 1999-03-26 2001-05-08 Ichiro Takahashi Heat treatment system using ring-shaped radiation heater elements
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FR2594119B1 (fr) * 1986-02-10 1988-06-03 Europ Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH07108836B2 (ja) * 1991-02-01 1995-11-22 株式会社日本生産技術研究所 減圧ｃｖｄ装置
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JPH05214540A (ja) * 1992-02-05 1993-08-24 Hitachi Ltd Ｃｖｄ反応のモニタ方法
KR100251873B1 (ko) * 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
RU2173354C2 (ru) * 1994-11-16 2001-09-10 З Би.эФ. Гудрич Кампэни Способ и устройство инфильтрации газовой фазы химического вещества и химического осаждения из газовой фазы (варианты), изделие, получаемое этим способом, устройство для подачи первого газа-реагента в печь для инфильтрации и осаждения из газовой фазы и фрикционный диск
CA2386382A1 (en) * 2000-02-18 2001-08-23 G.T. Equipment Technologies, Inc. Method and apparatus for chemical vapor deposition of polysilicon
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
JP4263024B2 (ja) * 2003-06-05 2009-05-13 株式会社ヒューモラボラトリー 炭素薄膜の製造方法および製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995016803A1 (fr) * 1993-12-16 1995-06-22 Societe Europeenne De Propulsion Procede de densification de substrats poreux
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
US6228174B1 (en) * 1999-03-26 2001-05-08 Ichiro Takahashi Heat treatment system using ring-shaped radiation heater elements

Also Published As

Publication number Publication date
AU2007242730A1 (en) 2007-11-01
RU2008143663A (ru) 2010-05-27
CN101063195A (zh) 2007-10-31
IL194837A0 (en) 2009-08-03
RU2421544C2 (ru) 2011-06-20
EP1849889A1 (en) 2007-10-31
JP5567332B2 (ja) 2014-08-06
TW200746876A (en) 2007-12-16
FR2900226B1 (fr) 2017-09-29
UA94098C2 (ru) 2011-04-11
CA2649986A1 (en) 2007-11-01
US20070256639A1 (en) 2007-11-08
JP2009534541A (ja) 2009-09-24
FR2900226A1 (fr) 2007-10-26
BRPI0711411A2 (pt) 2011-11-01
KR20080111154A (ko) 2008-12-22
MX2008013643A (es) 2008-11-10
AU2007242730B2 (en) 2012-02-23

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