WO2007119673A1 - 太陽電池、該太陽電池を用いた太陽電池モジュール、及び、該太陽電池モジュールの製造方法 - Google Patents
太陽電池、該太陽電池を用いた太陽電池モジュール、及び、該太陽電池モジュールの製造方法 Download PDFInfo
- Publication number
- WO2007119673A1 WO2007119673A1 PCT/JP2007/057553 JP2007057553W WO2007119673A1 WO 2007119673 A1 WO2007119673 A1 WO 2007119673A1 JP 2007057553 W JP2007057553 W JP 2007057553W WO 2007119673 A1 WO2007119673 A1 WO 2007119673A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- surface electrode
- main body
- electrode
- antireflection film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 49
- 238000003466 welding Methods 0.000 claims abstract description 18
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000013459 approach Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 70
- 239000000463 material Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011888 foil Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 235000007487 Calathea allouia Nutrition 0.000 description 1
- 244000278792 Calathea allouia Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- -1 and seat plate Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the condensing magnification is several tens to several hundreds, and the temperature of the solar cell rises due to the concentrated sunlight. Therefore, this solar cell needs to dissipate heat because the power generation efficiency decreases with increasing temperature. Therefore, a material having a high thermal conductivity such as metal is used for the solar cell holding plate used in the above-described concentrating solar cell module, and the solar cell is bonded to the solar cell holding plate, so that Heat is dissipated through the back of the battery.
- the surface electrode of the solar cell is in a state covered with the antireflection film.
- the surface electrode connection lead wire is connected to the surface electrode by force wire bonding or spot welding. be able to. Therefore, the surface electrode of the solar cell may be covered with the antireflection film! Therefore, the process for exposing the surface electrode involving complicated operations as described above is performed in the production of the solar cell. Can be unnecessary.
- the main body is formed with at least one PN junction formed by overlapping the P layer and the N layer in the front and back directions, and the end face of the PN junction is the main body.
- the predetermined side surface which is a part of the side surface of the slab is formed. If an antireflection film having insulating properties is formed on the predetermined side surface, it is considered that the following situation will occur.
- the surface (and side surfaces) of the surface electrode of the solar cell, the surface of the main body portion excluding the portion where the surface electrode is formed, and the predetermined side surface of the main body portion When an antireflection film having insulating properties covering these surfaces is formed, a conductive best base for fixing the solar cell to the solar cell holding plate when manufacturing a solar cell module using this solar cell. This is because, even if it adheres to the surface electrode of the solar cell, it is possible to prevent leakage current from flowing through the solar cell when the solar cell is used.
- the manufacturing method of the solar cell module of the present invention is the above-described manufacturing method of the solar cell module.
- FIG. 1 is a cross-sectional view of the solar cell in the first embodiment.
- FIG. 5 is a cross-sectional view of another example solar cell in the fourth embodiment.
- step 1 the base layer 2, the emitter layer 3, the window layer 4, and the contact layer 5 are sequentially laminated on the substrate 1 by MOCVD (metal organic chemical vapor deposition) or the like.
- MOCVD metal organic chemical vapor deposition
- a p-type GaAs base layer 2, an n + type GaAs emitter layer 3, an n + InGaP window layer 4 and an n + type GaAs contact layer 5 are formed on a ⁇ + type GaAs substrate 1 having a thickness of about 200 ⁇ m.
- Multi-layer continuous epitaxial growth is performed at a substrate temperature of about 650-700 ° C.
- the raw material gas used in this case is TEG (trimethylgallium), TMI (trimethylindium), AsH (arsine)
- a p-type dopant gas such as (monosilane), DEZn (jetylzinc) or the like is used.
- step 3 the surface electrode 6 is heated in an inert gas atmosphere such as N at 300 to 450 ° C.
- step 4 the surface electrode 6 is masked, and the contact layer 5 where the mask is not formed is removed by etching.
- etching an aqueous solution of ammonia Z hydrogen peroxide and hydrogen peroxide is used.
- the back electrode 7 has not yet been formed, but the surface electrode portion 11 is formed on the surface of the main body portion 12, and the shape of the solar cell 21 is formed.
- step 5 a mesa etching pattern is formed on the surface of the main body portion 12 by a photolithography method, and the compound semiconductor layer in the mesa etching portion is removed by etching to expose the substrate 1.
- a bromo aqueous solution is used as an etching solution for this etching.
- the mesa etching pattern formed by the above process is diced to cut out a predetermined cell shape.
- step 7 the surface and side surfaces of the surface electrode portion 11 of the solar cell 21 and the surface of the main body portion 12 excluding the portion where the surface electrode portion 11 is formed are insulated.
- An antireflective film 10 is formed.
- the antireflection film 10 is formed by sequentially forming a Ti02 film and an A1203 film with thicknesses of about 50 nm and about 85 nm, respectively, by EB evaporation.
- the thickness of these films is set to an appropriate thickness in consideration of the refractive index of these films, the assumed refractive index on the surface of the solar cell 21, and the like.
- FIG. 2 is a cross-sectional view of solar cell 22 in the second embodiment.
- Solar cell 22 in the second embodiment is almost the same as solar cell 21 in the first embodiment.
- the solar cell 22 in the second embodiment is different from the solar cell 21 in the first embodiment in that a highly insulating antireflection film 10 covering the side surface is formed on the side surface of the main body 12. There are other points, which are exactly the same as those of the solar cell 21 in the first embodiment.
- the solar cell 23 is manufactured as follows.
- step 2 of the manufacturing method of solar cell 22 in the second embodiment that is, in step 2 of the manufacturing method of solar cell 21 in the first embodiment, the force for forming the surface electrode 6 by the lift-off method Change to the following method. That is, Au-GeZNiZAu is formed on the surface of the composite semiconductor layer formed in the step 1, and then an electrode pattern is formed on the metal film by photolithography, and a metal such as a KI / I solution is formed. Etching with etchant to form surface electrode 6
- the side surface of the surface electrode 6 can be inclined so as to be narrowed from the surface of the main body portion 12 to the surface of the surface electrode 6.
- the other steps are the same as the manufacturing method of solar cell 22 in the second embodiment.
- FIG. 4 is a cross-sectional view of solar cell 24 in the fourth embodiment.
- Solar cell 24 in the fourth embodiment is almost the same as solar cell 23 in the third embodiment.
- the only difference between the solar cell 24 in the fourth embodiment and the solar cell 23 in the third embodiment is the shape of the side surface of the main body 12, and the other points are the solar cells in the third embodiment 2 3 Is exactly the same.
- Examples of the conductive paste 36 having a high thermal conductivity used for fixing the solar cell element 24 on the solar cell holding plate 35 include gold, silver, copper, aluminum, magnesium, iron, and the like.
- metals containing one or more of metals such as nickel, tin, and stainless steel and carbon, or solder are used.
- a fixing method a method of firing or brazing the conductive paste 36 is used.
- the solar cell 24 force used in the solar cell module 31 is the surface electrode of the surface electrode portion 11 of the solar cell 24 as described above.
- the surface and side surfaces of 6 and the surface of the main body portion 12 excluding the portion where the surface electrode portion 11 is formed, and the predetermined side surface 9 of the main body portion 12 have an insulating antireflection film covering these surfaces. 10 is formed. Therefore, when the solar cell module 31 is manufactured, even if the conductive paste 36 for adhering the solar cell 24 adheres to the surface electrode 6 of the solar cell 24 or the predetermined side surface 9 of the main body 12, It is possible to prevent leakage current from flowing through the solar cell 24 when the solar cell 24 is used.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2007239746A AU2007239746B2 (en) | 2006-04-14 | 2007-04-04 | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
EP07740989A EP2009703A1 (en) | 2006-04-14 | 2007-04-04 | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
US12/297,137 US20090277502A1 (en) | 2006-04-14 | 2007-04-04 | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006112409 | 2006-04-14 | ||
JP2006-112409 | 2006-04-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007119673A1 true WO2007119673A1 (ja) | 2007-10-25 |
Family
ID=38609432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/057553 WO2007119673A1 (ja) | 2006-04-14 | 2007-04-04 | 太陽電池、該太陽電池を用いた太陽電池モジュール、及び、該太陽電池モジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090277502A1 (ja) |
EP (1) | EP2009703A1 (ja) |
AU (1) | AU2007239746B2 (ja) |
WO (1) | WO2007119673A1 (ja) |
Cited By (4)
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JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
JP2010141112A (ja) * | 2008-12-11 | 2010-06-24 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
US20100319768A1 (en) * | 2007-12-14 | 2010-12-23 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V | Thin-film solar cell and process for its manufacture |
WO2017068900A1 (ja) * | 2015-10-20 | 2017-04-27 | 三菱電機株式会社 | 太陽電池の製造方法、太陽電池および太陽電池製造装置 |
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EP1993142A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung |
DE102008038184A1 (de) * | 2008-08-19 | 2010-02-25 | Suss Microtec Test Systems Gmbh | Verfahren und Vorrichtung zur temporären elektrischen Kontaktierung einer Solarzelle |
US20120216847A1 (en) * | 2011-02-28 | 2012-08-30 | Santosh Kumar | Pyroelectric solar technology apparatus and method |
DE102010017180A1 (de) | 2010-06-01 | 2011-12-01 | Solarworld Innovations Gmbh | Solarzelle, Solarmodul, und Verfahren zum Verdrahten einer Solarzelle, und Kontaktdraht |
TWI484648B (zh) * | 2011-06-08 | 2015-05-11 | Fitilite S Pte Ltd | 聚光型太陽電池模組 |
JP6077201B2 (ja) * | 2011-08-11 | 2017-02-08 | 昭和電工株式会社 | 発光ダイオードおよびその製造方法 |
KR101295552B1 (ko) * | 2011-11-16 | 2013-08-12 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
WO2014075060A1 (en) * | 2012-11-12 | 2014-05-15 | The Board Of Trustees Of The Leland Stanford Junior Univerisity | Nanostructured window layer in solar cells |
CN103560176A (zh) * | 2013-11-13 | 2014-02-05 | 山东力诺太阳能电力股份有限公司 | 太阳电池后覆膜制备方法 |
WO2015118592A1 (ja) * | 2014-02-06 | 2015-08-13 | パナソニックIpマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
US20170054045A1 (en) * | 2015-08-21 | 2017-02-23 | Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.O.C. | Method for packaging solar cell device and structure thereof |
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CN110164985A (zh) * | 2019-06-04 | 2019-08-23 | 苏州腾晖光伏技术有限公司 | 一种太阳能电池及其制备方法 |
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CN115020525B (zh) * | 2022-07-12 | 2023-11-07 | 晶澳(扬州)太阳能科技有限公司 | 一种背结太阳能电池及其制备方法 |
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Also Published As
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AU2007239746B2 (en) | 2011-10-06 |
US20090277502A1 (en) | 2009-11-12 |
AU2007239746A1 (en) | 2007-10-25 |
EP2009703A1 (en) | 2008-12-31 |
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