WO2007116887A1 - Capteur d'image en couleurs et son procede de fabrication - Google Patents

Capteur d'image en couleurs et son procede de fabrication Download PDF

Info

Publication number
WO2007116887A1
WO2007116887A1 PCT/JP2007/057483 JP2007057483W WO2007116887A1 WO 2007116887 A1 WO2007116887 A1 WO 2007116887A1 JP 2007057483 W JP2007057483 W JP 2007057483W WO 2007116887 A1 WO2007116887 A1 WO 2007116887A1
Authority
WO
WIPO (PCT)
Prior art keywords
color
layer
imaging device
colored
semiconductor substrate
Prior art date
Application number
PCT/JP2007/057483
Other languages
English (en)
Japanese (ja)
Inventor
Kenzo Fukuyoshi
Satoshi Kitamura
Tadashi Ishimatsu
Original Assignee
Toppan Printing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006102121A external-priority patent/JP4710693B2/ja
Priority claimed from JP2006115901A external-priority patent/JP4821415B2/ja
Application filed by Toppan Printing Co., Ltd. filed Critical Toppan Printing Co., Ltd.
Priority to EP07740919A priority Critical patent/EP2006913B1/fr
Priority to CN2007800178040A priority patent/CN101449381B/zh
Publication of WO2007116887A1 publication Critical patent/WO2007116887A1/fr
Priority to US12/285,367 priority patent/US8049805B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures

Definitions

  • Color imaging device and method of manufacturing color imaging device are described.
  • the present invention relates to a color imaging device and a method for manufacturing a color imaging device.
  • color filters of a plurality of colors are formed adjacent to each other using a photolithographic technique on a plurality of photoelectric conversion devices provided on a semiconductor substrate.
  • the color filter 1 has a thickness of approximately 1 ⁇ m.
  • the color filter also contains a colorless thing.
  • the number of pixels of imaging devices has been increased, and in recent years, the number of pixels has been several million. Also, with the progress of the increase in the number of pixels, the ratio of the area occupied by various wirings and electronic circuits for operating each pixel in each pixel is increasing. As a result, the ratio of the area (aperture ratio) that can be used by the photoelectric conversion element to actually receive light in each pixel at present is about 20 to 40%. This means that the light sensitivity of the imaging device is reduced.
  • JP-A-59-198754 discloses that a hemispherical-shaped colored microlens is used as a color filter.
  • FIG. 8 schematically shows a conventional example in which microlenses are disposed on a color filter in correspondence with photoelectric conversion elements in order to improve the light sensitivity of the imaging element.
  • This conventional in order to improve the photosensitivity of the imaging device 54 in which the plurality of photoelectric conversion devices 52 are provided in the semiconductor substrate 50, the plurality of photoelectric conversion devices 52 are formed on the surface of the semiconductor substrate 50 via the ultraviolet absorbing layer 56.
  • a micro lens 64 is further disposed on the surface of the color filters 58 and 60 of the plurality of colors corresponding to each other via the transparent flat layer 62.
  • color mixing tends to occur in the vicinity of the side surfaces of the color filters 58 and 60 that are adjacent to each other and in close contact with each other without gaps. That is, the partial force of the light ray 66 which also receives diagonal force on the side portion of the color filter 58 close to the micro lens 64, passes through the corner including the side portion of the color filter 58 and passes through the adjacent color filter 60. The light in the vicinity of the side surface of the adjacent color filter 60 is mixed.
  • the photoelectric conversion element 52 in FIG. 8, the photoelectric conversion element corresponding to the color filter indicated by reference numeral 60 in FIG. 8) in which color mixing occurs, the reproducibility of color and the reduction in lightness occur.
  • the color of the entire image sensor 54 is uneven.
  • FIG. 9 in order to improve the light sensitivity, a conventional imaging device 74 in which a plurality of photoelectric conversion devices 72 are provided adjacent to the surface of the semiconductor substrate 70 in the semiconductor substrate 70 is schematically shown. It is shown.
  • color filters 76, 78 of a plurality of colors are arranged on the surface of the semiconductor substrate 70 in correspondence with the plurality of photoelectric conversion elements 72 !.
  • the side surfaces of the plurality of color filters 76 and 78 adjacent to each other and in close contact with each other without gaps are used as in the case described above using the microlens.
  • the partial force of the light beam 80 which also has an oblique direction force incident on the portion close to the surface of the color filter side force of the adjacent color filter (FIG. 9: color filter 78) May enter a color filter.
  • color mixing occurs in the light near the side surface of the adjacent color filter, and the same result as described above is produced.
  • Japanese Patent Application Laid-Open No. 2005-294467 discloses a technology of forming a microlens with a transparent resin placed on the upper surface of a color filter and on the upper surface of the color filter. Have been described. That is, the upper part of the curved surface of the convex microlens is constituted by the transparent resin placed on the upper surface of the color filter, and then the upper part of the curved surface of the convex microlens constituted by the transparent resin.
  • the lower portion of the micro lens is constituted by the upper region of the color filter formed to be continuous with the curvature of.
  • microlenses are formed by dry etching using a lens matrix formed on the surface of a transparent resin as a mask, and the shape of the lens matrix is transferred to the upper region of the transparent resin and the color filter. It is formed by doing.
  • the etching rate is different between the color filters of different colors.
  • dry etching is performed so that the upper regions of the mutually adjacent color filters of different colors have a curvature that follows the curved surface of the convex microlens formed by the transparent resin. There is a difference in curvature between the upper regions of the color filters of different colors when formed.
  • the upper regions of the color filters of different colors formed so as to be continuous with the convex curved surface of the microlens by dry etching have different degrees of roughness of the respective surfaces. Then, the color balance of the light incident on each of the plurality of photoelectric conversion elements corresponding to the color filters of the plurality of colors via the color filters of the plurality of colors is deteriorated, and color unevenness occurs in the entire color imaging element.
  • the central portion and the peripheral portion of the microlens are incident on the microphone lens. There is a difference in the length of the optical path of the light that passes through the microlenses later. When the lengths of the light paths passing through the color filters are different, the coloring of the light rays passing through the respective light paths will differ. As a result of this, a large difference in spectral characteristics occurs in the rays passing through the central portion and the peripheral portion of the microlens.
  • the amount of light passing through the peripheral portion is greater than the amount of light passing through the central portion, so the light passing through the microlens that has been colored so as to serve as a color filter is The color becomes lighter as a whole. This means that the microphone lens colored to double as a color filter has a low color separation ability.
  • the coloring in the microlens which is colored to serve also as a color filter is darkened, the light passing through such a microlens becomes low in lightness. Furthermore, when the amount of coloring agent contained in the micro lens is increased, the smoothness of the surface of the micro lens is impaired and the function as the micro lens is reduced.
  • the present invention is made under the above-mentioned circumstances, and an object of the present invention is to cause color mixture in a plurality of photoelectric conversion elements even when adopting a structure for improving the photosensitivity of an imaging element. Furthermore, the color balance of the light incident on a plurality of photoelectric conversion elements having high color separation ability and corresponding to color filters of a plurality of colors does not deteriorate, and the color unevenness of the entire color imaging element is prevented. It is an object of the present invention to provide a color imaging device, and to provide a color imaging device manufacturing method for easily and reliably manufacturing the color imaging device described above.
  • a color imaging device corresponds to a semiconductor substrate including a plurality of photoelectric conversion devices and a plurality of photoelectric conversion devices of the semiconductor substrate. And a color filter including a plurality of provided colored layers. Then, each of the plurality of colored layers of the force filter has a side surface standing up to the surface of the semiconductor substrate, and the above-mentioned side surface, and an end opposite to the semiconductor substrate to the colored layer.
  • the invention is characterized in that the plurality of colored layers are disposed with their respective side surfaces in close contact with each other without any gaps, including an inclined surface facing toward the end opposite to the body substrate.
  • a color filter including a plurality of colored layers adjacent to each other corresponding to a plurality of photoelectric conversion elements of the semiconductor substrate is formed.
  • the colored layer is a side surface standing up to the surface of the semiconductor substrate, and an end surface colored layer located on the side opposite to the semiconductor substrate on the side surface, opposite to the semiconductor substrate.
  • Each of the plurality of colored layers is formed by including a continuous inclined surface facing the located end, and repeating the color resist layer forming step and the colored layer forming step a plurality of times. It is characterized in that a color filter is formed by arranging the respective side surfaces in contact without any gap.
  • the color imaging device In the color imaging device according to the present invention characterized as described above, photoelectric conversion is performed on the semiconductor substrate of the imaging device to increase the amount of light incident on each of the plurality of photoelectric conversion devices. Even when the conversion element is arranged as close as possible to the surface of the semiconductor substrate, and as a result, the light sensitivity of the color imaging device is improved, the color filter is placed on the side opposite to the semiconductor substrate.
  • the oblique light beams incident on the color filters on the outer side of the end are the outer peripheral area of the end on the side opposite to the semiconductor substrate in the adjacent color filters due to the slopes of the adjacent color filters. It enters each color filter without passing through. Therefore, the oblique light beam does not cause color mixture in the light incident on the respective color filters.
  • each color filter naturally follow the vertical side of each color filter as it is. It does not cause color mixing in the light incident on each color filter because it does not pass through the filter only and does not pass through the adjacent color filter.
  • each of the color filters of a plurality of colors has side surfaces adjacent to each other and in close contact with each other and standing up to the semiconductor substrate. Therefore, even when the microlens is formed on each of the color filters of a plurality of colors so as to increase the amount of light incident on each of the plurality of photoelectric conversion elements, the optical path length is different between the central portion and the peripheral portion
  • the filters can be provided with a sufficient thickness for each color so that they can be sufficiently color separated into the incoming rays of light. That is, each of the color filters of a plurality of colors can have high color separation ability.
  • the color of the color filter is darkened. It is not necessary to reduce the brightness of the light passing through such a micro lens because it does not need to be eliminated. Furthermore, it is possible to eliminate the reduction in the surface smoothness of the color filter due to the large amount of colorant. As a result, a bad balance is not generated between the colors of the color filters of a plurality of colors, and as a result, there is no power to cause color unevenness in the entire color imaging device.
  • FIG. 1A shows a semiconductor substrate including a plurality of photoelectric conversion elements before a color filter is formed by the method for manufacturing a color imaging element according to the first embodiment of the present invention. It is a schematic longitudinal cross-sectional view of the image pickup element.
  • FIG. 1B shows an ultraviolet absorbing layer and a first negative-type color resist on the semiconductor substrate of the imaging device of FIG. 1A in the method for manufacturing a color imaging device according to the first embodiment of the present invention.
  • FIG. 5 is a longitudinal sectional view schematically showing how a layer is formed and exposure processing is further performed using a halftone mask.
  • FIG. 1C the first negative-type color resist layer after exposure processing in FIG. 1B is developed and then hardened to form a first colored layer of a desired cross-sectional shape.
  • FIG. 7 is a longitudinal cross-sectional view schematically showing the contact.
  • FIG. 1D shows a second negative color of the color different from the first negative color resist layer in FIG. 1B on the semiconductor substrate with the first colored layer obtained in FIG. 1C.
  • FIG. 2A is a schematic plan view of the halftone mask used in FIG. 1B.
  • FIG. 2B is purple using the halftone mask shown in FIG. 1B in FIG. 2A.
  • the surface of the negative-working color resist layer on the outer absorption layer is pattern-exposed, and then the negative-working color resist layer is developed and then hardened.
  • the convex hemispherically-colored layer obtained is then subjected to UV absorption.
  • FIG. 3A is a schematic longitudinal sectional view of an imaging device before a color filter is formed by the method for manufacturing a color imaging device according to the second embodiment of the present invention.
  • FIG. 3B shows an ultraviolet absorbing layer and a first negative type color resist layer on the semiconductor substrate of the imaging device of FIG. 3A in the color imaging device manufacturing method according to the second embodiment of the present invention.
  • FIG. 6 is a longitudinal sectional view schematically showing how an exposure process is performed using a halftone mask.
  • FIG. 3C the first negative-type color resist layer after exposure processing in FIG. 3B is developed and then hardened to form a first colored layer of a desired cross-sectional shape.
  • FIG. 7 is a longitudinal cross-sectional view schematically showing the contact.
  • FIG. 3D shows a second negative color of a different color from the first negative color resist layer in FIG. 3B on the semiconductor substrate with the first colored layer obtained in FIG. 3C.
  • FIG. 4A is a schematic plan view of the halftone mask used in FIG. 3B.
  • FIG. 4B shows that after exposing the pattern of the surface of the negative color resist layer on the ultraviolet absorbing layer using the halftone mask shown in FIG. 3B in FIG. 4A, the negative color resist layer
  • FIG. 5 is a side view showing a convex hemispherically shaped colored layer obtained by development treatment and hardening treatment, together with an ultraviolet absorbing layer.
  • FIG. 5A is on the color filter of the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B. Furthermore, a longitudinal view schematically showing a micro lens formation preparation step in a method of manufacturing a color imaging device according to a third embodiment of the present invention, which further forms a micro lens FIG.
  • FIG. 5B shows a method of manufacturing a color imaging device according to a third embodiment of the present invention, according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • FIG. 5B is a longitudinal cross sectional view schematically showing a state in which a microlens is further formed following the microlens formation preparation step of FIG. 5A on the color filter of the color imaging device manufactured by the color imaging device manufacturing method.
  • FIG. 6A is on the color filter of the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • FIG. 14 is a longitudinal sectional view schematically showing a micro lens formation preparation step in the method for manufacturing a color imaging device according to the fourth embodiment of the present invention, in which a micro lens is further formed.
  • FIG. 6B schematically shows a microlens formation intermediate step that is performed subsequently to the microlens formation preparation step shown in FIG. 6A in the color imaging device manufacturing method according to the fourth embodiment of the present invention. It is a longitudinal cross-sectional view shown to.
  • FIG. 6C shows the second embodiment of the present invention described above with reference to FIGS. 3A to 4B through the microlens formation preparation step of FIG. 6A and the microlens formation intermediate step of FIG. 6B.
  • FIG. 10 is a longitudinal sectional view schematically showing a state in which a microlens is further formed on the color filter of the color imaging device manufactured by the color imaging device manufacturing method according to the embodiment of the present invention.
  • FIG. 7A is on the color filter of the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • FIG. 21 is a longitudinal sectional view schematically showing a micro lens formation preparation step in the method for manufacturing a color imaging device according to the fifth embodiment of the present invention, in which a micro lens is further formed.
  • FIG. 7B shows a method of manufacturing a color imaging device according to a fifth embodiment of the present invention, according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B. Further, on the color filter of the color imaging device manufactured by the color imaging device manufacturing method of the present invention, a micro lens is further formed following the micro lens formation preparation step of FIG. It is a longitudinal cross-sectional view which shows a mode schematically.
  • FIG. 8 is a schematic longitudinal sectional view of a conventional color imaging device in which microlenses are arranged on a color filter corresponding to photoelectric conversion devices in order to improve the light sensitivity of the imaging device. .
  • FIG. 9 is a schematic view of a conventional color imaging device in which the photoelectric conversion device is disposed as close as possible to the surface of the semiconductor substrate in the semiconductor substrate of the imaging device in order to improve the light sensitivity of the imaging device.
  • a color filter is formed on the image pickup element by the color filter manufacturing method of a color image pickup element according to the first embodiment of the present invention.
  • the manner in which the color imaging device according to the embodiment is manufactured will be described in detail.
  • FIG. 1A shows a schematic vertical cross-sectional view of an imaging device 14 in which a plurality of CMOS photoelectric conversion devices 12 are provided on a semiconductor substrate 10.
  • the photoelectric conversion element is the CMOS photoelectric conversion element 12, but according to the concept of the present invention, the photoelectric conversion element may be a CD photoelectric conversion element.
  • the configuration of such an imaging device 14 is well known and will not be described in further detail here! ,.
  • the pixel size in plan view to which the present invention can be applied is in the range of approximately 10 ⁇ m to approximately 1 ⁇ m, and in this embodiment is in the range of approximately 2. to approximately 2.2 m. .
  • a UV absorbing layer 16 is formed on the surface of the semiconductor substrate 10 of the imaging device 14 as shown in FIG. 1B, on which a plurality of photoelectric conversion devices 12 are formed.
  • a negative color resist layer 18 is formed.
  • the thickness UVH of the ultraviolet absorbing layer 16 is between about 0.1 ⁇ m and about 0.8 ⁇ m, and the thickness RH of the negative color resist layer 18 is about 0.5 It is between 111 and approximately 1.5 / zm.
  • the negative color resist layer 18 may be, for example, a pigment dispersion obtained by dispersing a coloring material (organic pigment) of a desired color in an alkali-soluble transparent resin and a solvent with a dispersant, a photo initiator, and a photopolymerization property. It is a coloring composition in which a monomer and an organic solvent such as cyclohexane or PGMEA are mixed. [0032]
  • the negative color resist layer 18 is usually prepared in three colors, green, blue and red.
  • the green positive-working color resist layer 18 has, for example, CI pigment yellow 150 and CI pigment green 36 added as coloring materials.
  • the blue negative color resist layer 18 contains, for example, CI pigment blue 15: 6 as a coloring material.
  • the red negative-working color resist layer 18 has, for example, CI pigment red 177, CI pigment red 254, and CI pigment yellow 150 as a coloring material.
  • the molecular weight of the resin is a weight average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).
  • a reaction vessel is charged with 800 parts of cyclohexane, heated to 100 ° C. while nitrogen gas is injected into the reaction vessel, and while maintaining this temperature, 60.0 parts of 2-hydroxyethyl methacrylate, 60.0 parts of methacrylic acid.
  • a polymerization reaction was carried out by dropwise adding a mixture of 65.0 parts of methyl methacrylate, 65.0 parts of butyl methacrylate, and 10.0 parts of azobis isobutyol-tolyl over 1 hour.
  • the reaction was further carried out for 3 hours while maintaining the temperature of 100 ° C.
  • 2.0 parts of azobisisopeptyl-tolyl dissolved with 50 parts of cyclohexanone was added to the reaction vessel, and reaction was carried out for a further 1 hour while maintaining the temperature of 100 ° C. to obtain an acrylic resin solution.
  • the weight average molecular weight of the acrylic resin was about 40000.
  • each of red pigment dispersion R-1, green pigment dispersion G-1 and blue pigment dispersion B-1 is illustrated.
  • Each of these pigment dispersions R-1, G-1 and B-1 is uniformly stirred and mixed with the mixture of the composition for each of the above, and then a large number of glass beads each having an individual diameter of 1 mm. Using a sand mill for 5 hours, and then prepared by filtration through a 5 ⁇ m mesh filter.
  • PR254 is a diketopyrrolopyrrole pigment (C ⁇ Pigment Red 254)
  • PR 177 is an anthraquinone pigment (CI Pigment Red 177)
  • PG36 is a halogenated copper phthalocyanine-based pigment (i. Pigment Green 36)
  • ⁇ 15: 6 is an ⁇ -type copper phthalocyanine pigment (C ⁇ Pigment Blue 15: 6)
  • PY150 is a nickel azo complex pigment (C ⁇ Pigment Yellow 150)
  • the pigment dispersant is “Sol Sparse 20000” manufactured by Japan Lubris Sol.
  • the acrylic resin solution is the acrylic resin solution prepared above;
  • the solvent is cyclohexanone.
  • each of the red pigment dispersion R-1 and the green pigment dispersion G-1 thus prepared and the blue pigment dispersion B-1 is the acrylic resin solution prepared above,
  • the mixture is stirred and mixed uniformly with a photoinitiator, a photopolymerizable monomer, and an organic solvent, and then filtered through a 1 ⁇ m mesh filter to obtain a red negative color resist, a green negative color resist, and A blue negative color resist could be obtained.
  • the photoinitiator is, for example: Oxime ester photopolymerization initiator 1.
  • 2-Otatadione 1 [4 (phenylthio) -l, 2- (0 benzoyloxy)], (Ciba 'Specialty' Chemicals Inc. “Irgacure OXE— 01”); and ⁇ -aminoalkylphenone-based photopolymerization initiator 2- (dimethylamino)-2- 1-(4-methylphenyl) methyl]-1- [4- (4 morpholine-))]-1-butanone (Chino 'specialty' chemicals 'Irgacure 379') is included.
  • the photopolymerizable monomer may be, for example: trimethylolpropane modified triarylate,
  • organic solvent is, for example, cyclohexane.
  • the color of the negative color resist layer 18 initially formed on the ultraviolet absorbing layer 16 is green.
  • the surface of the green negative-type color resist layer 18 is intended to form a green colored layer correspondingly.
  • a plurality of portions corresponding to the plurality of photoelectric conversion elements 12 are pattern-exposed using the halftone mask 20.
  • the halftone mask 20 is a convex hemisphere centered on the center of the corresponding photoelectric conversion element 12 after 1S development of each of a plurality of portions pattern-exposed by the halftone mask 20 in the green negative color resist layer 18. Butterfly that becomes shape It has one tone.
  • FIG. 2A A schematic plan view of the halftone mask 20 used is shown in FIG. 2A.
  • the half tone mask has a size of 4 to 5 times the size of the pattern to be actually formed, and is reduced to 1Z4 to 1Z5 during pattern exposure to perform pattern exposure.
  • the halftone mask changes gradation (gray scale) concentrically.
  • the gradation is changed, for example, by adjusting the number per unit area of fine black dots (or white dots) having dimensions smaller than the wavelength of exposure light, for example, at the time of 1Z5 reduction, on the nose tone mask. I can do it.
  • the number of white dots is increased toward the center of the plurality of concentric circles centered on the center of the photoelectric conversion element 12, and as a result, the center is obtained.
  • the light transmittance increases concentrically as it approaches.
  • Halftone mask 20 of this embodiment is a 4 to 5 times reticle, and a pattern having a size of 4 to 5 times the size of a pattern exposed on the surface of negative color resist layer 18 have. Then, the pattern of the halftone mask 20 is reduced to 1Z4 to 1Z5 and exposed on the surface of the negative color resist layer 18 using a stepper exposure apparatus (not shown).
  • Each of the plurality of portions corresponding to each has a half-convex convex end 24a centered on the center of the corresponding photoelectric conversion element 12 as illustrated in FIG. 1C. It remains as a colored layer 24 of
  • the peripheral portion of the end portion 24a is located on the first colored layer 24 and rises substantially perpendicularly from the ultraviolet absorbing layer 16.
  • the side opposite to the ultraviolet absorbing layer 16 is on the side 24b. From the top to the top of the end portion 24a, it is a sloped surface having a curved surface shape that is continuous on the opposite side to the corresponding photoelectric conversion element 12 and that protrudes to the opposite side.
  • the side 24 b of the first colored layer 24 rising substantially perpendicularly from the ultraviolet absorbing layer 16 has an edge on the opposite side to the ultraviolet absorbing layer 16 from the ultraviolet absorbing layer 16. It has a height BH of approximately 0.7 m, and the hemispherical convex end 24a has a side surface 2
  • the edge force of 4b also has a height ⁇ of approximately 0.5 ⁇ m to the apex.
  • a blue negative color resist layer 18 is formed in this embodiment.
  • the green negative color resist layer 18 described above with reference to FIGS. 1B and 1C is similar to the case of forming the green first colored layer 24.
  • the pattern exposure process, the development process and the hardening process are repeated.
  • each of the plurality of portions corresponding to the plurality of photoelectric conversion elements 12 for which the blue colored layer is to be formed correspondingly is shown in FIG. 1D. It becomes a blue second colored layer 26 having a hemispherical convex end 26 a centered on the center of the corresponding photoelectric conversion element 12.
  • a negative color resist layer 18 of red color in this embodiment is formed on the ultraviolet absorbing layer 16. Also for this red negative color resist layer 18, the green negative color resist layer 18 described above with reference to FIGS. 1B and 1C is the same as when the first colored layer 24 of green is formed. The pattern exposure process, the development process and the hardening process are repeated. As a result, in the red negative color resist layer 18, each of a plurality of portions corresponding to a plurality of photoelectric conversion elements 12 for which a red coloring layer is to be formed correspondingly is a green color shown in FIG. 1D.
  • a red third colored layer having a hemispherical convex end centered on the center of the corresponding photoelectric conversion element 12; Become.
  • the third colored layer in red is not shown in order to avoid complexity of the drawing.
  • the layer 26, and the red third colored layer (not shown) are adjacent to each other without gaps and in contact with the respective side faces 24b, 26b to constitute a color filter !.
  • the negative color resist layer 18 for forming the first to third colored layers 24, 26,... Of mutually different colors has different pigments contained in each other.
  • the three negative color resist layers 18 for the first to third colored layers 24, 26,... Have different sensitivities during exposure and development during development. Therefore, three Three types of halftone masks 20 are used to obtain the first to third colored layers 24, 26,...
  • the gradation level of each of the three halftone masks 20 is adjusted to be optimum for the formation of any of the first to third colored layers 24, 26,... It is natural to
  • each of the first to third colored layers 24, 26,... So as to have the dimensions that can best exhibit the required functions.
  • the colorant to be added to the negative color resist layer 18 is preferably a dye, but is preferably an organic pigment in consideration of heat resistance and light resistance.
  • the solid ratio of the organic pigment in the negative color resist is preferably 10% to 50%, particularly about 20%, in consideration of the quality in various manufacturing processes of the invention. If the solid ratio is less than 10%, the desired sufficient coloring effect on the negative color resist can not be obtained. When the solid ratio exceeds 50%, convex hemispherical shape, that is, hemispherical convex lens shape, and the first to third colored layers 24, 26. The adhesion of any one of them is lowered and it is very likely to drop off from the ultraviolet absorbing layer 16.
  • the residuals based on the corresponding pigments contained in each of the first to third colored layers 24, 26,... Obtained after pattern exposure of the three negative color resist layers 18 and development processing are performed.
  • the residue increases.
  • Such an increase in residue causes color mixing in the light passing through each of the first to third colored layers 24, 26,..., And hence, the first to third colored layers 24, 26,. It is not preferable because light passing through each of the light sources causes noise in the image signal output generated from the photoelectric conversion element 12 which has been incident.
  • the solid ratio of the photoinitiator contained in the negative color resist together with the pigment dispersion is preferably 7% or more. When this solid ratio is 7% or less, the resolution of the negative color resist is lowered due to the lack of sensitivity.
  • a photopolymerizable monomer contained together with a pigment dispersion and a photoinitiator in a negative color resist The solid ratio of 1 is preferably around 20%. When this solid ratio is 15% or less, the polymerization reactivity of the photopolymerizable monomer is lowered, and the negative color resist layer 18 does not have a desired shape. When the solid ratio is 25% or more, the amount of the photopolymerizable monomer which has not reacted by the pattern exposure increases, and as a result, in the hardening process performed after the pattern exposure and the development, the pattern exposure is performed. The volatilized non-reactive photopolymerizable monomers cause the hardened surface to become rough.
  • the IM ratio (I is a photoinitiator; and M is a photopolymerizable monomer) is preferably in the range of 20% to 50%.
  • the IM ratio is less than 20%, the stability of the negative color resist over time and the adhesion of the first to third colored layers 24, 26,. Dropouts are very likely to occur.
  • the IM ratio is 50% or more, the stability over time of the negative color resist is improved.
  • the amount of the photopolymerizable monomer which has not reacted by the pattern exposure increases, and as a result, the pattern exposure is performed.
  • the hardening treatment to be carried out after development and development, when the photopolymerization monomer which has not reacted by pattern exposure is volatilized, the surface of the hardened first to third colored layers 24, 26. Get rough.
  • the IM amount is preferably 4% or more.
  • the adhesion of the first to third colored layers 24, 26,... To the ultraviolet absorbing layer 16 is reduced, and the falling off from the ultraviolet absorbing layer 16 is very likely to occur.
  • the thickness of is about 0.
  • each of the plurality of colored layers of the flat color filter for the conventional color imaging device was about 1 ⁇ m. Therefore, in the color imaging device of this embodiment, the first to third colored layers 24, 26,... Which will perform the same function as the plurality of colored layers of the flat color filter for the conventional color imaging device.
  • the thickness BH (see FIG. 1C) of the portion is 10% of the solid ratio of the organic pigment in the negative color resist described above. If it is within 50%, 0.! ⁇ 1. It is preferable to be within the range of O 2 / zm.
  • the first to third colored layers 24, 26,... The height PH (see FIG. 1C) of the end portions 24a, 26a,... Formed into a convex hemispherical shape and used as a microlens in each of the colored layers 24, 26,. It is preferable to be in the range of 0.1 m.
  • the above-mentioned height PH The depth at which the photoelectric conversion element is provided on the semiconductor substrate of the conventional imaging element is in the range of 5 ⁇ m to 6 ⁇ m; the two documents described above As described in (Japanese Patent Application Laid-Open Nos. 2005-217 439 and 2005-223084), photoelectric conversion in a semiconductor substrate when the photoelectric conversion element is formed as close as possible to the semiconductor substrate in the semiconductor substrate.
  • the depth of the element is in the range of 2 m to 3 m; and the thickness of the ultraviolet absorbing layer 16 and the thickness of the negative color resist layer 18 formed on the photoelectric conversion element 12 in the semiconductor substrate 10 are taken into consideration.
  • the first to third colored layers 24 provided on the surface of the semiconductor substrate 10 via the ultraviolet absorbing layer 16 corresponding to the desired photoelectric conversion device 12.
  • Each of the end portions 24a, 26a, ... of the, 26, ... is shaped in a convex hemispherical shape as shown in Fig. 1D. While each of the end portions 24a, 26a,... Is arranged so as to shift from the center of the corresponding pixel, the corresponding photoelectric conversion element is arranged. In order to allow light to be focused on the 12 sensitivity centers, it is possible to form an asymmetric longitudinal cross-sectional shape as shown by a two-dot chain line in FIG. 1D.
  • the center of sensitivity of the photoelectric conversion element 12 is also shifted from the central force of the corresponding pixel. For example, in order to compensate for the lack of light quantity of the photoelectric conversion element 12 disposed in the peripheral portion of the reaction element 10 in the semiconductor element 10, or with the arrangement of the wiring in each pixel along with the miniaturization of the pixels of the semiconductor element 10. It is done to avoid interference.
  • the first to third colored layers are provided on the surface of the semiconductor substrate 10 via the ultraviolet absorbing layer 16 corresponding to the desired photoelectric conversion device 12. 24, 26, ... were made using negative color resists. However, the first to third colored layers 24, 26,... Can also be formed using positive color resists.
  • the halftone mask used for pattern exposure for forming the first to third colored layers 24, 26,... From the positive type color resist layer comprises the negative type color resist layer 18 to the first to third colored layers 24. , 26,... Are used for pattern exposure.
  • the gradation of black and white is opposite to that of the halftone mask 20. That is, the number of black dots is increased as it approaches the center of the concentric circle, and as a result, the light transmittance decreases concentrically as it approaches the center.
  • the thickness RH of the positive color resist layer is approximately 1.
  • a coloring material of a desired color is added to a positive type photosensitive resin, and an organic solvent such as cyclohexane or PGMEA, an acid decomposable resin, photoacid generation, etc. Made by adding agents, and dispersants! .
  • the positive color resist layer is also usually prepared in three colors, green, blue and red.
  • the green positive-working color resist layer has, for example, CI pigment yellow 150, CI pigment green 36, and CI pigment green 7 as a coloring material.
  • the blue positive-working color resist layer may contain, for example, CI Pigment Blue 1 as a coloring material.
  • the red positive color resist layer may contain, for example, CI pigment red 1 as a coloring material.
  • the positive photosensitive resin is, for example, a combination of novolak resin and quinonediazide compound. It is also possible to further add an alkali-soluble boule polymer to this combination.
  • the positive photosensitive resin may be, in addition, polyvinyl phenol derivatives or acrylics.
  • the color material may be an organic pigment or dye of any other color than those described above.
  • a lactic acid ester may be added to the organic solvent.
  • An acid-degradable resin is a resin having a group that can be converted to an alkali-soluble group (for example, a carboxyl group or a phenolic hydroxyl group) by contacting with an acid.
  • an alkali-soluble group for example, a carboxyl group or a phenolic hydroxyl group
  • the photoacid generator is a compound which generates an acid upon irradiation with light, and one or more of such compounds can be used.
  • a photo-acid generator for example, halogen ions of B, BF ions, PF ions, AsF ions, SbF ions, CF S
  • Sulfonic acid generating compounds can be used.
  • a green positive-type color resist layer, a blue positive-type color resist layer, and a red positive-type color resist layer are applied in this order on the semiconductor substrate 10 through the ultraviolet absorbing layer 16, Pattern exposure, development and hardening are carried out, and a green colored layer, a blue colored layer, and a red colored layer are formed at a plurality of predetermined positions on the semiconductor substrate 10 through the ultraviolet absorbing layer 16. Form and constitute a color filter.
  • Each of the positive green color resist layer, the positive blue color resist layer, and the positive red color resist layer has a force formed green coloring layer, a blue coloring layer, and a red coloring layer.
  • the blue colored layer 26 and the red colored layer can be shaped and the same in shape and size as the respective ones and can perform the same function.
  • the coloring material to be added to the positive type color resist is preferably a dye, but is preferably an organic pigment in consideration of heat resistance and light resistance.
  • the positive The solid ratio of the organic pigment in the mold color resist is preferably 30% to 50%, particularly about 40%. If the solid ratio is less than 30%, the desired sufficient coloring effect to the positive color resist can not be obtained, and if the solid ratio exceeds 50%, the positive hemispherical shape from the positive color resist layer, that is, the convex lens shape It becomes difficult to process it. Furthermore, the pigment-based residue contained in the colored layer produced from the positive color resist layer through pattern exposure and development is increased. Then, the light beams passing through such a colored layer are mixed, and the light beams passing through such a colored layer cause noise in the image signal output generated in the photoelectric conversion element.
  • the solid ratio of the organic pigment in such a positive type color resist is determined by the minimum thickness of each of the green, blue and red colored layers required to obtain the desired spectral characteristics. Is approximately 0.
  • each of the plurality of colored layers of the flat color filter for the conventional color imaging device as described above was about 1 ⁇ m. Therefore, in a color imaging device according to this modification in which a plurality of colored layers of a color filter is formed using a positive color resist, the plurality of colored flat color filters for a conventional color imaging device is used. Thickness BH (Fig. 1C) of the respective portions of the green, blue and red colored layers (that is, the portions surrounded by the side surfaces 24b or 26b rising from the ultraviolet ray absorbing layer 16) that will perform the same function as the layer.
  • Reference should be in the range of 0.4 / ⁇ to 0.9 / zm when the solid ratio of the organic pigment in the positive color resist is in the range of 30% to 50% described above. Furthermore, the range of 0.5 m to 0.7 m is most preferable.
  • each of the plurality of colored layers is in the range of 1.8 / ⁇ ⁇ 0. Is preferred.
  • a color filter is formed on the imaging device by the color imaging device manufacturing method according to the second embodiment of the present invention, and the color imaging device according to the second embodiment of the present invention is manufactured. The situation will be described in detail with reference to FIGS. 3A to 4B.
  • FIG. 3A shows a schematic vertical cross-sectional view of an imaging device 114 in which a plurality of CMOS photoelectric conversion devices 112 are provided on a semiconductor substrate 110.
  • the photoelectric conversion element is the CMOS photoelectric conversion element 112, but according to the concept of the present invention, the photoelectric conversion element may be a CCD photoelectric conversion element.
  • the configuration of such an imaging device 114 is well known and will not be described in further detail here.
  • the configuration of the imaging device 114 is also the same as the configuration of the imaging device 14 used in the method of manufacturing a color imaging device according to the first embodiment of the present invention described above with reference to FIGS. 1A to 2B. It is.
  • the pixel size in a plan view to which the present invention can be applied is in the range of approximately 10 ⁇ m to approximately 1 ⁇ m, and in this embodiment is in the range of approximately 3. to approximately 1.5 m. .
  • an ultraviolet absorbing layer 116 is formed on the surface of the plurality of photoelectric conversion elements 112 in the imaging element 114 as shown in FIG. 3B, and a negative power of a desired color is further formed thereon.
  • a first resist layer 118 is formed.
  • the ultraviolet light absorbing layer 116 and the negative color resist layer 118 of this embodiment are ultraviolet light absorbing formed on the surface of the image pickup device 14 used in the color image pickup device manufacturing method according to the first embodiment described above. Same as layer 16 and negative color resist layer 18.
  • the negative color resist layer 118 is usually prepared in three colors, green, blue and red.
  • the color of the negative-working color resist layer 118 initially formed on the ultraviolet light absorbing layer 116 is green.
  • the surface of the green negative-type color resist layer 118 is exposed 122 using a halftone mask 120 to a plurality of portions corresponding to a plurality of photoelectric conversion elements 112 for which a green colored layer is to be formed correspondingly.
  • the halftone mask 120 is formed on the surface of the semiconductor substrate 110 centering on the corresponding photoelectric conversion element 112 after development on each of a plurality of portions pattern-exposed by the halftone mask 120 in the green negative color resist layer 118.
  • the edge force opposite to the semiconductor substrate 110 and the ultraviolet absorbing layer 116 is also placed on the negative type color resist layer 118, the ultraviolet absorbing layer It has the gradation of the pattern such that a continuous inclined surface is formed toward the end located on the side opposite to 116.
  • FIG. 4A shows a schematic plan view of the halftone mask 120 used.
  • the half tone mask has a size of 4 to 5 times that of the pattern to be actually formed, and is reduced to 1Z4 to 1Z5 for pattern exposure during pattern exposure.
  • the halftone mask 120 has an opening forming portion 120a, which is a large circular light transmitting portion, and a plurality of concentric circles with respect to the opening forming portion 120a centered on the center of the photoelectric conversion element 112. And a tone change portion that changes tone (gray scale) sequentially.
  • Concentric gradations are formed, for example, by adjusting the number of fine black dots (or white dots) per unit area, which become smaller than the wavelength of exposure light, for example, at the time of 1Z5 reduction, on a nose tone mask. .
  • concentric gradations in which the light transmittances are concentrically different can be imparted to the nose mask.
  • the number of white dots is increased as it approaches the center concentrically around the center of photoelectric conversion element 112, and as a result, The light transmittance increases concentrically as it approaches the central opening formation portion 120a.
  • Halftone mask 120 of this embodiment is a 4 to 5 times reticle, and a pattern having a size of 4 to 5 times the size of a pattern exposed on the surface of negative color resist layer 18 have. Then, the pattern of the halftone mask 120 is reduced to 1Z4 to 1Z5 and exposed to the surface of the negative color resist layer 118 using a stepper exposure apparatus (not shown).
  • FIG. 4B is a schematic side view of a colored layer 124 obtained by developing a positive-working color resist layer 118 pattern-exposed with such a halftone mask 120.
  • the first colored layer 124 has a side surface 124 a perpendicular to the surface of the semiconductor substrate 110, and an end force on the side opposite to the semiconductor substrate 110 at the side surface 124 a is also a semiconductor substrate in the first colored layer 124. And an inclined surface 124c which is inclined to approach the periphery of the flat end 124b of the first colored layer 124 as it approaches the flat end 124b opposite to the plate 110. It has a dish shape.
  • the depth GD of the inclined surface 124c from the flat end portion 124b of the first colored layer 24 to the end on the side opposite to the semiconductor substrate 110 in the side surface 124a is approximately 0.
  • the height SH of the side surface 124a up to the ultraviolet absorbing layer 116 at the side surface 124a opposite to the semiconductor substrate 110 at the side surface 124a is approximately 0.5 ⁇ m.
  • a blue negative color resist layer 118 is formed on the ultraviolet absorbing layer 116 in this embodiment. Also for this blue negative color resist layer 118, the same pattern as when forming the green first colored layer 124 from the green negative color resist layer 118 described above with reference to FIGS. 3B and 3C. The exposure process, the development process, and the hardening process are repeated. As a result, in the blue negative color resist layer 118, each of a plurality of portions corresponding to the plurality of photoelectric conversion elements 112 for which the blue colored layer is to be formed correspondingly corresponds as shown in FIG. 3D. The result is a reversed dish-like blue second colored layer 126 having a flat end 126 b centered on the center of the photoelectric conversion element 112.
  • the second colored layer 126 also has a side surface 126 a perpendicular to the surface of the semiconductor substrate 110, and an end force on the side 126 a opposite to the semiconductor substrate 110 in the second colored layer 126 and the semiconductor substrate 110. Are inclined to approach the periphery of the flat end 126b of the second colored layer 126 as they approach the opposite flat end 126b.
  • a red negative color resist layer 118 is formed in this embodiment. Also for this red negative color resist layer 118, the same pattern as when forming the green first colored layer 124 from the green negative color resist layer 118 described above with reference to FIGS. 3B and 3C. The exposure process, the development process, and the hardening process are repeated. As a result, in the red negative color resist layer 118, each of a plurality of portions corresponding to a plurality of photoelectric conversion elements 112 for which a red colored layer is to be formed correspondingly is shown in FIG. 3D. Similar to the first colored layer 124 and the blue second colored layer 126, the back side having a flat end centered on the center of the corresponding photoelectric conversion element 112. It becomes the dish-like red third colored layer returned. The third colored layer in red is not shown in order to avoid complexity of the drawing.
  • the third colored layer also has a side surface perpendicular to the surface of the semiconductor substrate 110 and a side surface on the side surface.
  • the force on the opposite side to the substrate 110 is inclined to approach the periphery of the flat end of the third colored layer as it approaches the flat end on the side opposite to the semiconductor substrate 110 in the third colored layer. And sloped surfaces.
  • a plurality of green first colored layers 124 and a blue second colored layer formed in a desired arrangement on the plurality of photoelectric conversion elements 112 of the imaging element 114 via the ultraviolet light absorbing layer 116. 126, and a red third colored layer (not shown) are adjacent to each other without gaps and in contact with the respective side surfaces 124a and 126a to constitute a color filter !.
  • Each of the green first colored layer 124, the blue second colored layer 126, and the red third colored layer has a flat end 124b, 126b,.
  • Each of the intersections with each of the inclined surfaces 124c, 126c, ... is rounded in the developing step, and each of the inclined surfaces 124c, 126c, ... is also the first colored layer 124, the second colored layer.
  • 126 and the third colored layer often have a curved surface shape projecting on the opposite side to the corresponding photoelectric conversion element 112, but it is intended to achieve the intended purpose of the present invention. It does not matter if you can.
  • the negative color resist layer 118 for forming the first to third colored layers 124, 126,... Of mutually different colors has different pigments contained in each other.
  • the three negative color resist layers 118 for the first to third colored layers 124, 126,... Have different sensitivities during exposure and development during development. Therefore, three types of halftone masks 120 are used to obtain the first to third colored layers 124, 126,... From the three negative color resist layers 118.
  • Each gradation level of three kinds of halftone masks 120 is the first to third colored layers 124, 126, which it is intended to form. Adjusted to be optimal for the formation of ...!
  • each of the first to third colored layers 124, 126, ... So as to have the dimensions that can best perform their respective required functions.
  • the first to third colored layers 124 are also provided to the color imaging device according to the third embodiment. , 126, ... can also be made using a positive color resist.
  • the coloring material to be added to the positive type color resist layer 118 may be a dye, but in consideration of heat resistance and light resistance, an organic pigment is preferred.
  • the positive type color resist layer is The solid ratio of the organic pigment in 118 is preferably 30% to 50%, and particularly about 40%.
  • the minimum thickness of each of the colored layers 124, 126, ... necessary to obtain the desired spectral characteristics is As in the case of the second modification of the first embodiment described above, it becomes approximately 0.
  • each of the plurality of colored layers of the flat color filter for the conventional color imaging device as described above was about 1 ⁇ m. Therefore, when a plurality of colored layers of a color filter are formed by using a positive color resist, the same function as the plurality of colored layers of a flat color filter for a conventional color imaging device can be achieved.
  • the thickness SH (see FIG. 3C) of the respective portions of the green, blue and red colored layers is positive
  • the solid ratio of the organic pigment in the color resist is in the range of 30% to 50% described above, it is preferable that the solid ratio is in the range of 0.4 ⁇ to 0.9 / zm. The range of 5 ⁇ to 0.
  • the semiconductor substrate 100 may be moved away from the surface of the colored layers 124, 126, ... with respect to each of the J faces 124a, 126a, ...
  • the flat end portions 124a, 126a, ... of the plurality of colored layers 124, 126, ... each have a force depth of 0.6 / ⁇ 0.1 / It is preferable to be in the range of zm.
  • the plurality of colored layers 124, 126,... are required to obtain the desired spectral characteristics, in combination with the respective minimum thicknesses of 0.4 m of the side surfaces 124a, 126a,.
  • the thickness of each of the colored layers 124, 126,... Is selected to be equal to or smaller than about 1 m of the thickness of the conventional flat color filter.
  • the imaging device 114 used in this embodiment can be an imaging device having a normal configuration including a CMOS imaging device and a CCD imaging device widely used conventionally. To increase the amount of light incident on the photoelectric conversion element 112, and is closer to the surface of the semiconductor substrate 110 in the semiconductor substrate 110 than the image pickup element having a conventional configuration. It may be an imaging device having a structure in which the photoelectric conversion device 112 is disposed.
  • the plurality of colored layers 124, 126 In the color imaging device according to the second embodiment configured as described above and shown in (D) of FIG. 3, the plurality of colored layers 124, 126,. A light beam obliquely incident on an adjacent portion to the adjacent colored layer, the light beam IL obliquely incident on the adjacent colored layers 124, 126, ... due to the inclined surfaces 124c, 126c, ... of the adjacent colored layers 124, 126, ... It can be incident on the respective colored layers 124 or 126 or ... without passing through the respective peripheral portions of the flat end 124b, 126b, ... of .... Therefore, as described above with reference to FIG. 8 and FIG. Unlike in the case of the conventional color imaging device, color mixing does not occur in the light beams entering the respective colored layers 124 or 126 or.
  • FIGS. 5A and 5B the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • a flat resin layer 130 is formed of transparent resin on the flat ends 124b, 126b,.
  • the planarizing layer 130 has a thickness of about 1 / z m, and is formed of, for example, a thermosetting acrylic transparent resin.
  • the flat surface layer 130 also embeds a groove created between the inclined surfaces 124c, 126c, ... following the side surfaces 124a, 126a, ... of the plurality of colored layers 124, 126, ..., and the plurality of colored layers 124 , 126, ... provide a flat surface.
  • a phenolic resin having heat reflowability is applied by means of, for example, a spin coating method to form a lens matrix layer (not shown).
  • the lens matrix layer (not shown) in this embodiment has a thickness of approximately 0.
  • the lens matrix layer is subjected to pattern exposure and development according to a known photolithography technique to obtain a predetermined pattern.
  • a hemispherical lens matrix 132 is formed on the surface of the flat glass layer 130 in alignment with the centers of the plurality of colored layers 124, 126,.
  • the flat layer 130 is dry
  • the flat layer 130 is processed to form a plurality of colored layers 124, 126, ... as shown in FIG. 5B.
  • Micro-lenses for improving the degree of light collection to the photoelectric conversion elements 12 corresponding to each 34 form.
  • the microlens 134 has a height of approximately 0.5 ⁇ m.
  • dry etching of the flat color layer 130 is a plurality of colored layers 124, 126, ... slopes 12 4c, 126c, ... husband before reaching this lj [tilt, inclination of the plurality of colored layers 124, 126
  • the surfaces 124c, 126c, ... are prevented from being roughened by dry etching.
  • Each of the colored layers 124, 126,... Can sufficiently exhibit their original spectral characteristics.
  • planarizing layer 130 is formed of a resin having a benzene ring as a skeleton or an ultraviolet absorber having a benzene ring or the like is added, the surface becomes rough due to dry etching. Can be suppressed. Consequently, the optical performance of the microlens 134 formed by dry etching from the planarizing layer 130 can be further improved.
  • a plurality of colored layers 124 With respect to each of 126, ..., the light beam IL obliquely incident in the vicinity of the adjacent colored layer is the adjacent colored layer 124 due to the inclined surfaces 124c, 126c, ... of the adjacent colored layers 124, 126, ... , 126 can be incident on each of the plurality of color layers 124, 126,... Without passing through the periphery of the flat end 124 b, 126 b,. Therefore, unlike the case of the conventional color imaging device described above with reference to FIGS. 8 and 9, color mixture does not occur in the light incident on each of the plurality of colored layers 124, 126,.
  • the microlenses 134 formed corresponding to each of the plurality of colored layers 124, 126,... are hemispherically shaped.
  • each of these microphone lens 134 is arranged with the sensitivity center of the corresponding photoelectric conversion element 12 shifted from the center of the corresponding pixel, and in the case where the sensitivity center of the corresponding photoelectric conversion element 12 is In order to concentrate the light, it is possible to make the shape of an asymmetric longitudinal cross section as shown by a two-dot chain line in FIG. 5B.
  • the lens matrix layer force (not shown) formed on the flat surface of the planarizing layer 130 is also subjected to pattern exposure and development according to a known photolithography technique to form the lens matrix 132.
  • Illustrated used for pattern exposure This can be easily achieved by making the distribution of black dots (or white dots) in the noble-metal tone mask asymmetric.
  • the non-symmetrical longitudinal cross-sectional shape of the lens matrix 132 thus produced is shown by a two-dot chain line in FIG. 5A.
  • This shape of the longitudinal section of the lens matrix 132 is the same as the asymmetric longitudinal sectional shape shown by the two-dot chain line in FIG. 5B of the microlens 134 formed from the lens matrix 132.
  • FIGS. 6A to 6C the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • the flat end portions 124b, 126b,... Of the plurality of colored layers 124, 126,... Of the color filters of the color imaging device are as shown in FIG. 6A.
  • a flat resin layer 130 is formed by the transparent resin.
  • the planarizing layer 130 has a thickness of about 1 m and is formed of, for example, a thermosetting acrylic transparent resin.
  • the flat surface layer 130 is continuous to the periphery of the flat end portions 124b, 126b,... Of the edge surfaces of the plurality of colored layers 124, 126,..., J sides 124a, 126a,.
  • the grooves created between the inclined surfaces 124c, 126c, ... are also embedded and provide a flat surface on the plurality of colored layers 124, 126, ....
  • An etching control layer 140 is formed on the planar surface of the planarizing layer 130.
  • the etch control layer 140 has a thickness of approximately 1 ⁇ m and is formed of, for example, photosensitive phenol novolac resin.
  • a phenolic resin having heat reflowability is applied on the etching control layer 140 by means of, for example, a spin coating method to form a lens matrix layer (not shown).
  • the lens matrix layer (not shown) in this embodiment has a thickness of approximately 0.
  • this lens matrix layer is subjected to pattern exposure and development according to a known photolithography technique to obtain a predetermined pattern. Heat and reflow this predetermined pattern Thus, a hemispherical lens matrix 142 is formed on the surface of the etching control layer 140 so as to coincide with the centers of the plurality of colored layers 124, 126,.
  • the etching control layer 140 is formed of a resin having a benzene ring as a skeleton, or when an ultraviolet absorber having a benzene ring or the like is added, surface roughness due to dry etching can be suppressed.
  • the etching control layer 140 can be formed of a thermosetting resin, an alkali developable photosensitive resin.
  • the etching rate of the etching control layer 140 is set to be slower than the etching rate of the lens matrix 142. Therefore, the action of dry etching on the etching control layer 140 can be delayed, and surface roughness of the intermediate lens 144 formed from the etching control layer 140 by dry etching can be suppressed.
  • the etching gas supplied to the known dry etching apparatus is CF only, and the intermediate
  • the planarizing layer 130 is dry etched using the lens 144 as a mask. Then, the shape of the intermediate lens 144 is transferred to the planarizing layer 130 to cover the planarizing layer 130, and the plurality of colored layers 124, 126,... Shown in FIG. 6C. A plurality of microlenses 146 are formed to improve the degree of light collection to the plurality of photoelectric conversion elements 1 12 corresponding to.
  • the microlenses 146 have a height of approximately 0.5 ⁇ m.
  • dry etching of the flat light emitting layer 130 has a plurality of colored layers 124, 126, ... inclined surface 12 4c, 126c, ⁇ ⁇ ⁇ [preceded by lj reaching [multiple stop, multiple colored layers 124, 126, ⁇ ⁇ ⁇ ⁇ ⁇
  • the inclined surfaces 124c, 126c,... Prevent the surface from being roughened by dry etching.
  • the plurality of colored layers 124, 126,... With the inclined surfaces 124c, 126c,... can sufficiently exhibit the spectral characteristics inherent to the color filter.
  • the flat layer 130 is formed of a resin having a benzene ring as a skeleton, or when an ultraviolet absorber having a benzene ring or the like is added, the surface associated with dry etching You can control the As a result, the optical performance of the microlens 134 formed by dry etching from the planarizing layer 130 can be further improved.
  • an etching control layer 140 for suppressing surface roughness by dry etching is formed on the flat surface layer 130, and a lens mold 142 is formed on the surface of the etching control layer 140.
  • the intermediate lens 144 is precisely transferred from the lens matrix 142 to the etching control layer 140 by dry etching.
  • the micro lens 146 is formed by transferring the shape of the intermediate lens 144 to the planarizing layer 130 by dry etching. Therefore, the surface roughness of the microlens 146 due to the dry etching in the fourth embodiment is directly formed on the surface of the flat support layer 130 in the third embodiment described above with reference to FIGS. 5A and 5B.
  • the shape of the lens matrix 132 is significantly smaller than that in the case where the microlens 134 is formed by transferring the shape of the lens matrix 132 to the flat layer 130 by dry etching.
  • the optical performance of the microlens 146 formed in the fourth embodiment is much better than the optical performance of the microlens 134 formed in the third embodiment.
  • the plurality of colored layers 124 With respect to each of 126, ..., the light beam IL obliquely incident in the vicinity of the adjacent colored layer is the adjacent colored layer 124 due to the inclined surfaces 124c, 126c, ... of the adjacent colored layers 124, 126, ... , 126 can be incident on each of the plurality of color layers 124, 126,... Without passing through the periphery of the flat end 124 b, 126 b,. Therefore, unlike the case of the conventional color imaging device described above with reference to FIGS. 8 and 9, color mixture does not occur in the light incident on each of the plurality of colored layers 124, 126,.
  • the microlenses 146 formed corresponding to each of the plurality of colored layers 124, 126,... are formed in a hemispherical shape.
  • each of these microphone lenses 146 is arranged with the center of sensitivity of the corresponding photoelectric conversion element 112 being offset from the center of the corresponding pixel, and in the case where the sensitivity of the corresponding photoelectric conversion element 112 is medium.
  • an asymmetric longitudinal cross-sectional shape as shown by a two-dot chain line in FIG. 6C. It can be
  • the lens matrix layer force (not shown) on the etching control layer 140 is also used for pattern exposure when forming the lens matrix 142 by pattern exposure and development according to known photolithographic techniques. This can be easily achieved by making the distribution of black dots (or white dots) in the halftone mask, not shown, asymmetric.
  • the asymmetric longitudinal cross-sectional force of the lens matrix 142 so created is shown in phantom in FIG. 6A. This shape of the longitudinal section of the lens matrix 142 passes through the intermediate lens 144 formed from the lens matrix 142 to the etching control layer 140 and further to the micro lens 134 shown in FIG. The same as the asymmetrical longitudinal cross-sectional shape shown by the two-dot chain line.
  • FIGS. 7A and 7B the color imaging device manufactured by the color imaging device manufacturing method according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • the flat end portions 124b, 126b,... Of the plurality of colored layers 124, 126,... Of the color filters of the color imaging device are as shown in FIG. 7A.
  • predetermined notches corresponding to flat ends 124b, 126b,... Of the plurality of colored layers 124, 126,. make an exposure 154.
  • the predetermined pattern is a plurality of portions corresponding to flat end portions 124b, 126b,... Of the plurality of colored layers 124, 126,.
  • the halftone mask 152 used here is a negative color of a predetermined color in the method of manufacturing a color imaging device according to the second embodiment of the present invention described above with reference to FIGS. 3A to 4B.
  • the colored layer 24 or 26 or ⁇ ⁇ ⁇ of the specified shape from the mold color resist layer 118 The configuration is the same as that of the halftone mask 120 used when pattern exposure is performed on the negative color resist layer 118 of a predetermined color to be formed by development, and the difference from the halftone mask 120 is that it is formed by development. Only the pattern shape due to the difference in the shape of the target object.
  • the micro lens 156 formed by pattern exposure and development from the negative photosensitive resist layer 150 is a color image pickup according to the third embodiment of the present invention described above with reference to FIGS. 5A and 5B.
  • the processing process is simpler, and The surface roughness is as small as the microlens 46 formed in the fourth embodiment.
  • the optical performance of the microlens 156 formed in the fifth embodiment is the same as that of the third embodiment, similarly to the microlens 46 formed in the fourth embodiment. Better than the optical performance of the formed micro-lens 34.
  • the plurality of colored layers 124, 126 With respect to each of the light beams IL obliquely incident in the vicinity of the adjacent colored layer, the adjacent colored layers 124 and 12 are formed by the inclined surfaces 124c and 126c of the adjacent colored layers 124 and 126.
  • the light can be incident on each of the plurality of colored layers 124, 126,... Without passing through the peripheral portions of the flat end portions 124b, 126b,. Therefore, unlike the case of the conventional color imaging device described above with reference to FIGS. 8 and 9, color mixture does not occur in the light incident on each of the plurality of colored layers 124, 126,.
  • the microlenses 156 respectively formed corresponding to the plurality of colored layers 124, 126,... are hemispherically shaped.
  • the distribution of black dots (or white dots) in the not-shown half tone mask used in forming the microlenses 156 by pattern exposure and development from the negative photosensitive resist layer 150 is made asymmetric. It can easily be achieved by
  • the microlenses 156 formed corresponding to the plurality of colored layers 124, 126,... Have negative photosensitive properties. It was created using a resist. However, the microlenses 156 can also be made using a positive photosensitive resist.
  • a color imaging device is used, for example, in a television camera, a video camera, an electronic still camera, etc., to convert an optical image into an electrical image and produce an electrical signal corresponding to the optical image. Be done.

Abstract

L'invention concerne un capteur d'image en couleurs comprenant un substrat semiconducteur (10) incluant une pluralité d'éléments de conversion photoélectrique (12) et un filtre de couleurs incluant une pluralité de couches colorées (24, 26) utilisées en correspondance avec la pluralité d'éléments de conversion photoélectrique du substrat semiconducteur. Chacune des couches colorées dans le filtre de couleurs inclut des faces latérales (24b, 26b) s'élevant depuis la surface du substrat semiconducteur, ainsi qu'une face inclinée, continue depuis une extrémité située sur le côté opposé au substrat semiconducteur dans la face latérale vers les extrémités (24a, 26a) situées sur le côté opposé au substrat semiconducteur dans la couche colorée. La pluralité de couches colorées est agencée de manière à être en contact serré avec les faces latérales respectives.
PCT/JP2007/057483 2006-04-03 2007-04-03 Capteur d'image en couleurs et son procede de fabrication WO2007116887A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07740919A EP2006913B1 (fr) 2006-04-03 2007-04-03 Capteur d'image en couleurs et son procede de fabrication
CN2007800178040A CN101449381B (zh) 2006-04-03 2007-04-03 彩色摄像元件以及彩色摄像元件制造方法
US12/285,367 US8049805B2 (en) 2006-04-03 2008-10-02 Color imaging device and color imaging device manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006-102121 2006-04-03
JP2006102121A JP4710693B2 (ja) 2006-04-03 2006-04-03 カラー撮像素子及びカラー撮像素子製造方法
JP2006-115901 2006-04-19
JP2006115901A JP4821415B2 (ja) 2006-04-19 2006-04-19 カラー撮像素子製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/285,367 Continuation US8049805B2 (en) 2006-04-03 2008-10-02 Color imaging device and color imaging device manufacturing method

Publications (1)

Publication Number Publication Date
WO2007116887A1 true WO2007116887A1 (fr) 2007-10-18

Family

ID=38581177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057483 WO2007116887A1 (fr) 2006-04-03 2007-04-03 Capteur d'image en couleurs et son procede de fabrication

Country Status (4)

Country Link
US (1) US8049805B2 (fr)
EP (2) EP2482316B1 (fr)
KR (1) KR101114608B1 (fr)
WO (1) WO2007116887A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009204741A (ja) * 2008-02-26 2009-09-10 Toppan Printing Co Ltd 感光性組成物、赤色着色層及びカラーフィルタ
JP2015118353A (ja) * 2013-12-20 2015-06-25 凸版印刷株式会社 半球形状のマイクロレンズ付カラーフィルタ
JP7423908B2 (ja) 2019-05-27 2024-01-30 Ｔｏｐｐａｎホールディングス株式会社 固体撮像装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2482316B1 (fr) 2006-04-03 2013-10-16 Toppan Printing Co., Ltd. Procédé de fabrication d'un dispositif d'imagerie couleur
US8324701B2 (en) * 2010-07-16 2012-12-04 Visera Technologies Company Limited Image sensors
KR20140023953A (ko) 2011-03-30 2014-02-27 가부시키가이샤 니콘 화상 처리 장치, 촬상 장치 및 화상 처리 프로그램
JP5710510B2 (ja) * 2012-01-12 2015-04-30 株式会社東芝 固体撮像装置
US9502453B2 (en) 2013-03-14 2016-11-22 Visera Technologies Company Limited Solid-state imaging devices
TWI612649B (zh) 2013-03-18 2018-01-21 Sony Corp 半導體裝置及電子機器
CN107533205A (zh) * 2015-05-12 2018-01-02 奥林巴斯株式会社 摄像装置、内窥镜系统以及摄像装置的制造方法
US10600833B2 (en) * 2017-03-01 2020-03-24 Himax Technologies Limited Image sensor
CN106773272A (zh) * 2017-03-06 2017-05-31 深圳市华星光电技术有限公司 彩色滤光基板以及液晶显示面板

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59122193A (ja) 1982-12-28 1984-07-14 Nec Corp 固体撮像装置
JPS59198754A (ja) 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
JPS6038989A (ja) 1983-08-12 1985-02-28 Nec Corp 固体撮像装置の製造方法
JPS6053073A (ja) 1983-09-02 1985-03-26 Hitachi Ltd マイクロレンズ付固体撮像素子および製法
WO2004006336A1 (fr) * 2002-07-09 2004-01-15 Toppan Printing Co., Ltd. Generateur d'images a semi-conducteurs et son procede de fabrication
JP2005217439A (ja) 2005-04-01 2005-08-11 Sony Corp 固体撮像素子及びその製造方法
JP2005223084A (ja) 2004-02-04 2005-08-18 Sony Corp 固体撮像装置
JP2005294467A (ja) 2004-03-31 2005-10-20 Canon Inc 固体撮像装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9218610D0 (en) 1992-09-03 1992-10-21 Electro Hydraulic Technology L Linear motor valve
JP3383076B2 (ja) 1994-06-03 2003-03-04 富士通ディスプレイテクノロジーズ株式会社 カラーフィルター及び液晶表示パネル
JPH1123830A (ja) 1997-06-30 1999-01-29 Mitsubishi Chem Corp カラーフィルター
JP3209180B2 (ja) * 1998-05-26 2001-09-17 日本電気株式会社 固体撮像装置の製造方法
KR100399951B1 (ko) * 1998-12-30 2003-12-18 주식회사 하이닉스반도체 칼라이미지센서제조방법
JP2003332547A (ja) * 2002-05-16 2003-11-21 Fuji Film Microdevices Co Ltd 固体撮像素子及びその製造方法
US7084472B2 (en) * 2002-07-09 2006-08-01 Toppan Printing Co., Ltd. Solid-state imaging device and manufacturing method therefor
JP4310093B2 (ja) * 2002-10-09 2009-08-05 キヤノン株式会社 固体撮像素子の製造方法
JP4348062B2 (ja) * 2002-10-15 2009-10-21 京セラ株式会社 固体撮像装置
US6861280B2 (en) * 2002-10-25 2005-03-01 Omnivision International Holding Ltd Image sensor having micro-lenses with integrated color filter and method of making
JP4830306B2 (ja) * 2004-06-23 2011-12-07 凸版印刷株式会社 固体撮像素子の製造方法
US7068432B2 (en) * 2004-07-27 2006-06-27 Micron Technology, Inc. Controlling lens shape in a microlens array
JPWO2006028128A1 (ja) * 2004-09-09 2008-05-08 松下電器産業株式会社 固体撮像素子
US7180044B2 (en) * 2004-12-03 2007-02-20 United Microelectronics Corp. Image sensor device with color filters and manufacturing method thereof
KR100672994B1 (ko) * 2005-01-28 2007-01-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
WO2006085528A1 (fr) * 2005-02-10 2006-08-17 Toppan Printing Co., Ltd. Dispositif d’imagerie à semi-conducteur et procédé de fabrication idoine
US7669085B2 (en) * 2005-04-15 2010-02-23 Microsoft Corporation Method and apparatus for performing wireless diagnostics and troubleshooting
EP2482316B1 (fr) 2006-04-03 2013-10-16 Toppan Printing Co., Ltd. Procédé de fabrication d'un dispositif d'imagerie couleur

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59122193A (ja) 1982-12-28 1984-07-14 Nec Corp 固体撮像装置
JPS59198754A (ja) 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
JPS6038989A (ja) 1983-08-12 1985-02-28 Nec Corp 固体撮像装置の製造方法
JPS6053073A (ja) 1983-09-02 1985-03-26 Hitachi Ltd マイクロレンズ付固体撮像素子および製法
WO2004006336A1 (fr) * 2002-07-09 2004-01-15 Toppan Printing Co., Ltd. Generateur d'images a semi-conducteurs et son procede de fabrication
JP2005223084A (ja) 2004-02-04 2005-08-18 Sony Corp 固体撮像装置
JP2005294467A (ja) 2004-03-31 2005-10-20 Canon Inc 固体撮像装置
JP2005217439A (ja) 2005-04-01 2005-08-11 Sony Corp 固体撮像素子及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2006913A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009204741A (ja) * 2008-02-26 2009-09-10 Toppan Printing Co Ltd 感光性組成物、赤色着色層及びカラーフィルタ
JP2015118353A (ja) * 2013-12-20 2015-06-25 凸版印刷株式会社 半球形状のマイクロレンズ付カラーフィルタ
JP7423908B2 (ja) 2019-05-27 2024-01-30 Ｔｏｐｐａｎホールディングス株式会社 固体撮像装置

Also Published As

Publication number Publication date
KR20080100476A (ko) 2008-11-18
US8049805B2 (en) 2011-11-01
EP2006913A9 (fr) 2009-07-29
EP2482316B1 (fr) 2013-10-16
EP2006913B1 (fr) 2013-01-02
EP2006913A4 (fr) 2011-05-18
US20090040345A1 (en) 2009-02-12
EP2482316A1 (fr) 2012-08-01
KR101114608B1 (ko) 2012-03-05
EP2006913A2 (fr) 2008-12-24

Similar Documents

Publication Publication Date Title
WO2007116887A1 (fr) Capteur d'image en couleurs et son procede de fabrication
EP1855320B1 (fr) Dispositif d'imagerie à semi-conducteur et procédé de fabrication idoine
CN100533749C (zh) 固体摄像元件及其制造方法
TWI278991B (en) Solid image-pickup device and method of manufacturing the same
JP4830306B2 (ja) 固体撮像素子の製造方法
JP4710693B2 (ja) カラー撮像素子及びカラー撮像素子製造方法
JP2008032912A (ja) マイクロレンズの製造方法
JP2007316153A (ja) カラー撮像素子のマイクロレンズ製造方法及びカラー撮像素子のマイクロレンズアレイ
KR102471568B1 (ko) 고체 촬상 소자 및 그 제조 방법
JP2006222291A (ja) 固体撮像素子及びその製造方法
JP2005079344A (ja) 固体撮像装置及びその製造方法
JP2006078766A (ja) カラー固体撮像素子及びそのカラーフィルター
JP4821415B2 (ja) カラー撮像素子製造方法
JP2008153331A (ja) カラー固体撮像素子及びその製造方法
JP2008130732A (ja) カラー固体撮像素子の製造方法
JP5565771B2 (ja) マイクロレンズの製造方法および撮像素子
JP6536005B2 (ja) カラーフィルタの製造方法およびカラーフィルタ
TW200901451A (en) Color photography element and method of manufacturing color photography element
JP6809215B2 (ja) 固体撮像素子およびその製造方法
JP6838394B2 (ja) 固体撮像素子およびその製造方法
JP2005311275A (ja) 固体撮像素子及びその製造方法
JP2005189710A (ja) カラーフィルタの製造方法、固体撮像装置およびカメラ

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780017804.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07740919

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1020087024255

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 8363/DELNP/2008

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2007740919

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE