WO2007094527A1 - Apparatus and method of manufacturing super conducting tapes using wet chemical process - Google Patents

Apparatus and method of manufacturing super conducting tapes using wet chemical process Download PDF

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Publication number
WO2007094527A1
WO2007094527A1 PCT/KR2006/000646 KR2006000646W WO2007094527A1 WO 2007094527 A1 WO2007094527 A1 WO 2007094527A1 KR 2006000646 W KR2006000646 W KR 2006000646W WO 2007094527 A1 WO2007094527 A1 WO 2007094527A1
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Prior art keywords
superconducting
layer
buffer layer
metal layer
wire
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PCT/KR2006/000646
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English (en)
French (fr)
Inventor
Jai-Moo Yoo
Young-Kuk Kim
Jae-Woong Ko
Kook-Chae Chung
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Korea Institute Of Machinery & Materials
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Publication of WO2007094527A1 publication Critical patent/WO2007094527A1/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0607Wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/22Sheathing; Armouring; Screening; Applying other protective layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1275Process of deposition of the inorganic material performed under inert atmosphere
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1279Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1283Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • C25D5/12Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00Superconductive or hyperconductive conductors, cables, or transmission lines
    • H01B12/02Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
    • H01B12/06Films or wires on bases or cores
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/22Sheathing; Armouring; Screening; Applying other protective layers
    • H01B13/222Sheathing; Armouring; Screening; Applying other protective layers by electro-plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/30Drying; Impregnating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/32Filling or coating with impervious material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00Insulated conductors or cables characterised by their form
    • H01B7/17Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/18Protection against damage caused by wear, mechanical force or pressure; Sheaths; Armouring
    • H01B7/189Radial force absorbing layers providing a cushioning effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming superconductor layers
    • H10N60/0324Processes for depositing or forming superconductor layers from a solution
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming superconductor layers
    • H10N60/0576Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control

Definitions

  • the present invention relates, in general, to the manufacture of superconducting wires, and more particularly, to an apparatus and method for manufacturing a superconducting wire using a wet chemical process, in which a metal layer, a buffer layer and a superconducting layer are sequentially manufactured using only a wet chemical process, without rolling and post- heating processes for conferring biaxial orientation to the metal layer or intermediate layer, thus manufacturing an oxide superconducting wire.
  • oxide superconducting wires have excellent current transport properties and superior critical current properties in strong magnetic fields.
  • oxide superconducting wire is expected to realize small sizes, high efficiencies and high capacitances of large power machines upon application to power cables, industrial motors, power generators, etc.
  • FIG. 1 is a cross-sectional view showing an oxide superconducting wire.
  • the oxide superconducting wire includes a metal substrate A, a buffer layer B, and a superconducting layer C. Since the current transport properties vary greatly depending on the orientation of crystals in a superconductor, the crystals of the superconductor should be arranged to have high biaxial orientation, so as to manufacture a superconducting wire having a high critical current density (Jc). Thus, attempts have been successfully made to induce biaxial orientation of crystals of a superconductor using a highly oriented metal substrate of ⁇ 100 ⁇ l 00>.
  • a technique of forming an intermediate layer having controlled crystal orientation on a long metal tape and then sequentially forming a buffer layer and an oxide superconducting layer on the intermediate layer has been proposed.
  • a typical example of the superconducting tape-shaped wire thus obtained useful is a tape-shaped wire obtained by depositing stable zirconia (YSZ) having crystal orientation controlled using IBAD (Ion Beam-Assisted Deposition) on a Hastelloy tape while maintaining c-axis orientation to the tape and a-axis and b-axis matching (in-plane orientation) to the tape and then forming a Y 123 (YBa 2 Cu 3 0 7 .
  • YSZ stable zirconia
  • IBAD Ion Beam-Assisted Deposition
  • the rolling/post-heating process or IBAD process is mainly adopted to confer biaxial orientation to the metal layer or intermediate layer.
  • a high-vacuum process such as sputtering, laser abrasion, heat deposition or metal-organic chemical vapor deposition, or a wet chemical process such as metal-organic deposition (MOD) may be employed.
  • the wet chemical process such as MOD does not need to be conducted in a high vacuum, and merely consists of coating and heat treatment, hence generating economic benefits.
  • oxide superconducting wires having critical current values of 380 A/cm on a short wire and 160 A/cm or more on a long wire having a length of 85 m, have been developed by forming a superconducting layer on a metal substrate that is prepared through rolling/post-heating processes, using an MOD process. In this way, the MOD process is regarded as excellent from the point of view of economic benefits and wire performance.
  • the oxide superconducting wire is composed of a plurality of highly oriented crystal layers. Such a multilayered wire is manufactured through a plurality of process steps. In the case where the plurality of process steps is required as in manufacturing the superconducting wire, it is preferred that the steps progress continuously without interruption in order to realize excellent productivity and economic benefits.
  • the steps progress continuously without interruption in order to realize excellent productivity and economic benefits.
  • methods of manufacturing oxide superconducting wires developed to date there is big trouble in continuously conducting the process of preparing a substrate and the process of forming a buffer layer or a superconducting layer, so that realizing a continuous superconducting wire manufacturing process is impossible.
  • the metal plated layers are known to have high orientation to the c-axis of the metal lattice but to have no orientation to the a-axis or b-axis thereof.
  • the biaxial orientation may be induced upon application of an external magnetic field during a plating process, which is disclosed in Korean Patent No. 352976 and US Patent No. 6,346,181.
  • This method is novel in that an electroplated layer having biaxial orientation is obtained by appropriately controlling the position of the electrode in the plating bath and the arrangement of a magnetic field, but is disadvantageous because the extent of biaxial orientation is lower than that of a substrate resulting from conventional rolling/heating processes.
  • an object of the present invention is to provide an apparatus and method for manufacturing a superconducting wire using a wet chemical process, in order to enable the continuous manufacture of the superconducting wire, which has been conventionally regarded as unrealizable, by conducting the process of manufacturing an oxide superconducting wire using only a wet chemical process such as electroplating, electroless plating, or MOD.
  • the present invention provides an apparatus for manufacturing a superconducting wire using a wet chemical process, comprising a metal layer formation part for forming a metal layer having biaxial orientation through electroplating; a buffer layer formation part for forming a buffer layer on the metal layer through a wet chemical process while maintaining the biaxial orientation of the metal layer, thus obtaining a wire having a buffer layer; and a superconducting layer formation part for forming a superconducting layer on the wire having a buffer layer through a wet chemical process while maintaining the biaxial orientation of the wire having a buffer layer, thus manufacturing the superconducting wire.
  • the superconducting layer formation part may include a winding portion for winding the superconducting wire.
  • the metal layer formation part may include an electroplating portion, which is composed of a cathode having biaxial orientation, an anode for providing positive potential, a current supply source for supplying current to the cathode and anode, and an electroplating bath containing an electroplating solution in which the cathode and anode are dipped; a water washing bath for washing the metal layer separated from the cathode of the electroplating portion; and a dryer for drying the metal layer washed in the water washing bath.
  • an electroplating portion which is composed of a cathode having biaxial orientation, an anode for providing positive potential, a current supply source for supplying current to the cathode and anode, and an electroplating bath containing an electroplating solution in which the cathode and anode are dipped
  • a water washing bath for washing the metal layer separated from the cathode of the electroplating portion
  • a dryer for drying the metal layer washed in the water washing bath.
  • the buffer layer formation part may include a buffer layer coater for applying a precursor solution on the metal layer formed using the metal layer formation part through a wet chemical process while maintaining the biaxial orientation of the metal layer; and a buffer layer heater for heating the precursor solution applied using the buffer layer coater to cure it.
  • the wet chemical process may be any one selected from among MOD, electroless plating, and electroplating.
  • the buffer layer formation step may be conducted by applying a precursor solution, composed mainly of a metal salt or a chelating agent, on the metal layer and then heating the metal layer, coated with the precursor solution for a buffer layer, to 500-1300°C for a period of time ranging from 10 min to 1 hour in an inert gas atmosphere containing 4-10% hydrogen gas.
  • a precursor solution composed mainly of a metal salt or a chelating agent
  • the superconducting layer formation step may be conducted by applying a precursor solution composed mainly of a superconducting metal and a metal salt on the wire having a buffer layer, heating the wire having a buffer layer coated with the precursor solution for a superconducting layer at 300 ⁇ 600°C in a pure oxygen atmosphere containing moisture to calcine the precursor solution for a superconducting layer so as to form a precursor thin film, and post-heating the wire having a buffer layer on which the precursor thin film is formed at 700 ⁇ 850°C for a period of time ranging from 10 min to 3 hours in an inert gas atmosphere containing 10-10000 ppm oxygen to form the precursor thin film into the superconducting layer.
  • FIG. 2 is a view showing an apparatus for manufacturing a superconducting wire using a wet chemical process, according to the present invention
  • FIG. 3 is a flowchart showing a process of manufacturing a superconducting wire through a wet chemical process using the apparatus of FIG. 2, according to the present invention.
  • the method of preparing a metal plated layer having high biaxial orientation through electroplating is specifically disclosed in Korean Patent No. 10-0516126, related to 'a method of manufacturing a metal plated layer having biaxial texture', and a detailed description thereof is omitted.
  • the method of manufacturing the superconducting wire of the present invention is largely composed of 1) a metal layer formation process (S1 ⁇ S3) of forming a metal layer having excellent biaxial orientation through electroplating,
  • the cathode is washed, dipped in an aqueous solution comprising 0 ⁇ 10 M lithium hydroxide, 0 ⁇ 10 M sodium hydroxide, 0-10 M potassium hydroxide, 0 ⁇ 10 M ammonia water, and 0-10 M hydrogen peroxide for a period of time ranging from ones of seconds to tens of minutes, washed with water, and then dried.
  • a process of smoothing the surface of the cathode through electrolytic polishing may be further carried out (Sl).
  • the metal layer m separated in Sl is transferred to the water washing bath
  • the metal layer formed by the metal layer formation process including Sl -S3 is transferred to the buffer layer formation part 20 via a guide roller R4, coated with the precursor solution for a buffer layer through a wet chemical process using the buffer layer coater 21 (S4), and then heated using the buffer layer heater 22, thus forming the buffer layer (S5).
  • the buffer layer has biaxial orientation and is formed into one or more layers on the biaxially oriented metal layer, using any one wet chemical process selected from among electroplating, electroless plating, and organic chemical deposition.
  • the wet chemical process MOD, electroless plating, or electroplating may be adopted. In particular, the use of MOD is preferable.
  • a high-temperature superconducting wire can be manufactured using only a wet chemical process, such as electroplating or MOD.
  • a wet chemical process such as electroplating or MOD.
  • FIG. 3 is a flowchart showing a process of manufacturing a superconducting wire using a wet chemical process, according to the present invention
  • composition of nickel plating solution 250 g/1 of nickel sulfaminate, 15 g/1 of nickel chloride, and 15 g/1 of boric acid Plating temperature: 50°C Plating time: Nickel - 20 min
  • CeO 2 was formed through MOD under the following conditions:
  • composition of precursor solution 0.2 M Ce-acetylacetonate, 0.1 M triethanolamine
  • YBa 2 Cu 3 O 7-X (YBCO) was formed through MOD under the following conditions: Composition of precursor solution: Y-trifluoroacetate, Ba-trifluoroacetate, Cu-trifluoroacetate
  • Coating process Dip coating Calcination conditions: 400°C, oxygen gas (containing 2% moisture)
  • FIG. 6 is a view showing the critical current properties of the YBCO layer acting as the superconducting layer. As shown in FIG. 6, the critical current of 8 A was measured at a line width of 7 mm. Therefore, it has been confirmed that the superconducting wire can be manufactured using only a wet chemical process, such as electroplating, electroless plating, or MOD.
PCT/KR2006/000646 2006-02-16 2006-02-24 Apparatus and method of manufacturing super conducting tapes using wet chemical process WO2007094527A1 (en)

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KR10-2006-0015146 2006-02-16
KR1020060015146A KR100741726B1 (ko) 2006-02-16 2006-02-16 습식화학공정을 이용한 초전도 선재 제조 장치 및 그 방법

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WO2022032048A1 (en) * 2020-08-06 2022-02-10 American Superconductor Corporation Electro-formed metal foils

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KR101004116B1 (ko) * 2008-03-25 2010-12-27 주식회사 서남 초전도 선재의 전해 도금 장치
KR101316154B1 (ko) 2012-02-29 2013-10-08 주식회사 포스코 전기전도성이 우수한 강심알루미늄연선용 고탄소 강선 및 그의 제조방법
KR101657789B1 (ko) * 2014-12-04 2016-09-20 주식회사 포스코 초전도 적층선재 제조방법
KR102096448B1 (ko) * 2017-01-02 2020-05-28 한양대학교 에리카산학협력단 그래핀 코팅 동박 제조방법 및 제조장치
KR102310583B1 (ko) * 2018-08-17 2021-10-08 한국화학연구원 인라인 연속코팅 페로브스카이트 광활성층 형성방법 및 인라인 연속코팅 장치
WO2021221238A1 (ko) * 2020-04-29 2021-11-04 한국전기연구원 고온초전도 선재 제조장치 및 방법

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