Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
  • H01L21/02046—Dry cleaning only
  • H01L21/02049—Dry cleaning only with gaseous HF
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02057—Cleaning during device manufacture
  • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
  • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Definitions

• the present invention relates to a substrate processing apparatus and a substrate processing method for performing a predetermined process on a substrate to be processed such as a semiconductor wafer.
• a thin film deposition process In general, in the manufacturing process of a semiconductor device, various processes such as a thin film deposition process, an oxidative diffusion process, and an annealing process are performed on a semiconductor wafer (hereinafter also simply referred to as “weno”). Etching treatment and the like are sequentially repeated. Thin films may be formed in multiple layers on a semiconductor wafer.
• a substrate processing apparatus that performs such various processes, for example, a so-called cluster-type substrate processing system configured by commonly connecting a plurality of processing chambers to a single transfer chamber so that processing can be performed continuously. There is a device (see, for example, JP-A-2004-119635).
• a cluster-type substrate processing system wafers are transported as if walking between processing chambers, and the necessary processing is performed continuously and efficiently in each processing chamber each time! / RU
• the cleaned wafer is placed inside the substrate processing apparatus.
• the film forming process is executed.
• the natural acid film on the wafer is removed outside the substrate processing apparatus, the surface of the wafer is not removed when the wafer is taken into the substrate processing apparatus for film formation. If exposed to the atmosphere, a new natural acid film may be formed on the wafer surface. Depending on the thickness of this natural oxide film, the natural oxide film has a significant effect on the characteristics of the semiconductor device that is formed later. For example, a natural acid film with a film thickness of 0.5 nm or more on the wafer surface. When a new film is formed, it becomes a big problem when a gate insulating film with a film thickness of 65 nm or less is formed.
• IPA isopropyl alcohol
• JP-A-2002-166237 isopropyl alcohol
• IPA molecules organic substances such as carbon
• IPA molecules can adversely affect, for example, gate oxide and capsule properties (K. MOTAI, T. Itoga, and T. Me, Extended Abstruct of 1997, International Conference on SolidState Devices and Materials, Hamamatsu, pp 24-25 (1997)).
• an object of the present invention is to include a natural oxide film on a substrate without using a water component and without using plasma. It is an object of the present invention to provide a substrate processing apparatus capable of removing a kimono and subsequently performing measurement processing and film formation processing without exposing the substrate to the atmosphere.
• the present invention provides a plurality of processing chambers for performing a predetermined process on a substrate to be processed, and a plurality of processing chambers commonly connected to each of the plurality of processing chambers. And a common transfer chamber for carrying in and out of the substrate to be processed, and the plurality of processing chambers include deposits including a natural oxide film deposited on the substrate to be processed by plasma.
• a deposit removal chamber for removing the gas component by chemical reaction and heat treatment, a film deposition chamber for performing a film deposition process on the substrate to be processed, and a measurement process for measuring the substrate to be processed
• a substrate processing apparatus including a measurement processing chamber.
• the deposit containing the natural acid film is removed by the chemical reaction with the soot gas component such as plasma and heat treatment, so that the water component is used like wet cleaning. Therefore, it is possible to prevent the occurrence of a watermark on the substrate to be processed.
• plasma since plasma is not used, it is possible to prevent charge-up damage caused by plasma from being applied to the substrate to be processed.
• the measurement process and film formation process can be executed continuously after the deposit removal process in the substrate processing apparatus. It is possible to prevent a natural oxide film from being newly formed on the substrate to be processed immediately before. In this way, since the deposits including the natural acid film can be reliably removed, the adhesion of the film formed on the substrate to be processed can be further improved by the next film formation process, and the strength can be improved. Can be further improved.
• the deposit removal processing chamber includes a product generation processing chamber for generating a product by chemically reacting the deposit on the substrate to be processed with a gas component, and the product generation chamber.
• the processing chamber is composed of two processing chambers, a product removal processing chamber for removing the product generated on the substrate to be processed by heat treatment.
• the film forming chamber is formed in a first film forming chamber for forming a first film on the substrate to be processed and in the first film forming chamber.
• the second film forming process chamber includes a second film forming process chamber for forming a second film on the first film.
• the measurement processing chamber includes a film thickness measurement unit that measures a film thickness of a film formed on the substrate to be processed, and a particle measurement that measures particles on the substrate to be processed.
• a film thickness measurement unit that measures a film thickness of a film formed on the substrate to be processed
• a particle measurement that measures particles on the substrate to be processed.
• a section In this case, both film thickness and particles can be measured in one measurement processing chamber, and throughput can be improved.
• the measurement processing chamber includes an image processing unit for capturing and recognizing a surface image of the substrate to be processed.
• pattern matching on the surface of the substrate to be processed can be performed, and for example, a measurement point on the substrate to be processed for measuring a film thickness or particles can be specified.
• the present invention provides a plurality of processing chambers for performing predetermined processing on a substrate to be processed, a common transfer chamber commonly connected to the plurality of processing chambers, and the common transfer chamber provided in the common transfer chamber.
• a plurality of vacuum processing apparatuses each including a transport mechanism for transporting a substrate to be processed; and a pass unit that connects the plurality of vacuum processing apparatuses to each other.
• the plurality of processing chambers include: The deposit including the natural acid film deposited on the substrate to be processed is caused by plasma! A deposit removal treatment chamber for removal by chemical reaction and heat treatment with gas / gas components, a film formation treatment chamber for performing film formation on the substrate to be processed, and a measurement process for the substrate to be processed. And a measurement processing chamber for performing the substrate processing apparatus.
• the deposit including the natural acid film is converted to a gas component such as plasma. Since it is removed by chemical reaction and heat treatment, water components are not used as in wet cleaning, so that it is possible to prevent the occurrence of watermarks on the substrate to be processed. In addition, since plasma is not used, it is possible to prevent charge-up damage caused by plasma from being applied to the substrate to be processed. In addition, measurement processing and film formation can be performed continuously after the deposit removal process in the substrate processing apparatus, so a natural oxide film is newly formed on the substrate to be processed immediately before the film formation process. Can be prevented. In this way, since the deposits including the natural acid film can be reliably removed, the adhesion of the film formed on the substrate to be processed can be further improved by the next film formation process, and the strength can be improved. Can be further improved.
• a gas component such as plasma
• the deposit removal processing chamber includes a product generation processing chamber for generating a product by chemically reacting the deposit on the substrate to be processed with a gas component, and the product generation chamber.
• the processing chamber is composed of two processing chambers, a product removal processing chamber for removing the product generated on the substrate to be processed by heat treatment.
• the film forming chamber is formed in a first film forming chamber for forming a first film on the substrate to be processed and the first film forming chamber.
• the second film forming process chamber includes a second film forming process chamber for forming a second film on the first film.
• the film forming chamber is formed in a first film forming chamber for forming a first film on the substrate to be processed and the first film forming chamber.
• a plurality of sets of two processing chambers including a second film forming process chamber for forming a second film on the first film are included.
• the film forming process can be executed in parallel in a plurality of film forming process chambers, so that the throughput of the entire apparatus can be greatly improved.
• the film forming chamber is the substrate to be processed.
• a first barrier layer film forming process chamber for forming a first barrier layer inside a contact hole or via hole formed in a processing substrate; and the first barrier film formed in the first barrier layer film forming process chamber
• a second barrier layer deposition processing chamber for depositing the second barrier layer on the upper side of the layer.
• the first barrier layer, the second barrier, etc. are removed after surely removing deposits such as a natural oxide film attached to the contact hole or via hole formed in the substrate to be processed.
• a rear layer can be formed. As a result, the adhesion of these films can be further improved, and the strength can be further improved.
• the film forming chamber has a base oxide film layer formed on the substrate to be processed by oxygen radicals.
• a base oxide film forming process chamber for forming a film and a high dielectric for forming a high dielectric gate oxide film on a substrate on which the base oxide film layer is formed in the base oxide film forming process chamber And a body gate oxide film formation processing chamber.
• the adhesion of these films (layers) can be further improved, and the strength can be further improved.
• the present invention provides a deposit removing step for removing deposits including a natural oxide film deposited on a substrate to be processed by a chemical reaction with a gas component not using plasma and heat treatment, and the deposit removal.
• Substrate processing comprising: a measurement step for performing measurement processing of the substrate to be processed after the step; and a film forming step for performing film formation processing on the substrate to be processed after the measurement step. Is the method.
• the deposition process is performed in a state in which deposits including the natural oxide film are reliably removed by continuously performing the deposit removal step, the measurement step, and the film deposition step. Can be broken. As a result, the adhesion of the film formed on the substrate to be processed can be further improved, and the strength can be further improved.
• the deposit removing step includes a product generating step of generating a product by chemically reacting the deposit on the substrate to be processed with a gas component, and the product generating step. And a product removal step of removing the product generated on the substrate to be processed by heat treatment.
• the film forming step includes a first film forming step of forming a first film on the substrate to be processed and the first film formed in the first film forming step.
• the measurement step is a step of performing an inspection measurement process for inspecting whether or not the attached matter removing step is properly executed.
• the measuring step further includes a film thickness measuring step for measuring a film thickness of the surface of the substrate to be processed on which the deposit removing step has been performed, and the deposit removing step on which the deposit has been removed.
• a deposit measurement step for measuring deposits on the surface of the substrate to be processed, and the film thickness measurement step and the deposit measurement step are preferably performed in one measurement processing chamber. In this way, by measuring both the film thickness and particles (adhered matter), it is possible to reliably inspect whether the adhering material including the natural oxide film has been removed from the substrate to be processed.
• the measurement step includes a process recipe for executing the deposit removal step based on the measurement results measured by the film thickness measurement step and the deposit measurement step. It further has a recipe correction step for correcting.
• the deposit removal step according to the actual processing result can be executed. For this reason, the deposits including the natural acid film can be reliably removed from the substrate to be processed.
• the measurement step determines whether or not to execute the next film formation step based on the measurement results measured by the film thickness measurement step and the deposit measurement step. It further has a judgment step of judging. In this case, for example, if the measurement results measured by the film thickness measurement step and the particle (adhered matter) measurement step are within an allowable range, it is determined that the next film forming step can be performed, while Otherwise, it may be determined that the next film forming step cannot be executed. Thus, the next film forming step can be executed in a state where the deposits including the natural oxide film on the substrate to be processed are always removed. As a result, the uniformity of the film quality of the film formed on the substrate to be processed can be ensured.
• the measurement step includes an inspection measurement step for inspecting whether or not the deposit removal step is properly performed, and a film thickness of a base film on which the next film formation step is performed. And a base film thickness measuring step for measuring.
• the measurement step includes a film thickness measurement step for measuring a film thickness of the surface of the substrate to be processed on which the deposit removal step has been performed, and a deposit removal step.
• the film thickness measurement step, the deposit measurement step, and the base film thickness measurement step are executed in one measurement processing chamber.
• the film thickness measurement for inspecting whether or not the deposit removal step has been properly executed and the film thickness measurement of the underlying film to be subjected to the next film formation process can be performed simultaneously. Processing time can be significantly reduced.
• the present invention provides a deposit removing step for removing deposits including a natural oxide film deposited on a substrate to be processed by a chemical reaction with a gas component not using plasma and heat treatment, A deposition step for performing a deposition process on the substrate to be processed after the deposit removing step; and a measurement step for performing a measurement process for the substrate to be processed after the deposition step.
• This is a substrate processing method.
• the measurement step includes a film thickness measurement step for measuring a film thickness of the film formed by the film formation step.
• a film thickness measurement step for measuring a film thickness of the film formed by the film formation step.
• the measurement step further includes a recipe correction step of correcting a process recipe for executing the film formation step based on the measurement result measured by the film thickness measurement step. .
• a recipe correction step of correcting a process recipe for executing the film formation step based on the measurement result measured by the film thickness measurement step.
• the present invention does not rely on plasma for a measurement step for measuring a substrate to be processed and a deposit including a natural oxide film deposited on the substrate to be processed after the measurement step.
• a deposit removing step for removing the deposit by a chemical reaction with a gas component and a heat treatment; and a deposition step for performing a deposition process on the substrate to be processed after the deposit removing step.
• This is a substrate processing method. In this way, the measurement step of the substrate to be processed may be performed before the deposit removal step.
• the present invention provides a computer with a deposit removal step of removing deposits including a natural oxide film deposited on a substrate to be processed by a chemical reaction with a gas component that does not depend on plasma and a heat treatment; It is a program for executing a measurement step for measuring a substrate to be processed and a film forming step for performing a film forming process on the substrate to be processed after the deposit removing step.
• the present invention provides a computer with a deposit removal step of removing deposits including a natural oxide film deposited on a substrate to be processed by a chemical reaction with a gas component that does not depend on plasma and a heat treatment;
• the deposit removal step, the measurement step, and the film formation step can be continuously performed, and deposits including a natural oxide film can be reliably obtained.
• the film forming process can be performed in the state of being removed. As a result, the adhesion of the film formed on the substrate to be treated can be further improved, and the strength can be further improved.
• FIG. 1 is a cross-sectional view showing a configuration example of a substrate processing apparatus according to a first embodiment of the present invention.
• FIG. 2 is a diagram showing a configuration example of a processing chamber in the substrate processing apparatus shown in FIG.
• FIG. 3 is a block diagram showing a configuration example of a control unit (system controller) shown in FIG.
• FIG. 4 is a block diagram showing a configuration example of an EC (apparatus control unit) according to the first embodiment of the present invention.
• FIG. 5 is a diagram showing another configuration example of the processing chamber in the substrate processing apparatus shown in FIG. 1.
• FIG. 6 is a cross-sectional view showing a configuration example of a substrate processing apparatus according to a second embodiment of the present invention.
• FIG. 7 is a diagram showing a configuration example of a processing chamber in the substrate processing apparatus shown in FIG.
• FIG. 8 is a diagram showing another configuration example of the processing chamber in the substrate processing apparatus shown in FIG.
• FIG. 9 is a diagram showing another configuration example of the processing chamber in the substrate processing apparatus shown in FIG.
• FIG. 10 is a cross-sectional view showing a configuration example of a substrate processing apparatus according to a third embodiment of the present invention.
• FIG. 11 is a block diagram showing a configuration example of the measurement processing chamber shown in FIG.
• FIG. 12 is a block diagram showing a configuration example of an EC (apparatus control unit) according to the third embodiment of the present invention.
• FIG. 13 is a diagram showing a configuration example of a processing chamber in the substrate processing apparatus shown in FIG.
• FIG. 14 is a flowchart showing a specific example of measurement processing in the measurement processing chamber shown in FIG.
• FIG. 1 is a schematic configuration diagram showing an example of a substrate processing apparatus according to the present embodiment.
• this substrate processing apparatus 100 includes one common transfer chamber 102 formed in a substantially polygonal shape (for example, hexagonal shape) and a plurality of (for example, four) processing chambers configured to be evacuated.
• 104 A to 104D the substrate processing apparatus 100 includes one common transfer chamber 102 formed in a substantially polygonal shape (for example, hexagonal shape) and a plurality of (for example, four) processing chambers configured to be evacuated.
• the processing chambers 104A to 104D are connected to the peripheral surface of the common transfer chamber 102 via gate valves 106A to 106D, respectively.
• each of the processing chambers 104A to 104D is provided with mounting tables 105A to 105D on which a substrate to be processed, for example, a semiconductor wafer (hereinafter also simply referred to as “wafer”) W is mounted.
• wafer semiconductor wafer
• Each of the processing chambers 104A to 104D can perform a predetermined process on the wafer W mounted on the mounting tables 105A to 105D, respectively.
• the common transfer chamber 102 is connected to a substantially rectangular loading-side transfer chamber 110 via two load lock chambers 108A and 108B that are configured to be evacuated. Gate valves 107A and 107B are interposed at connecting portions between the load lock chambers 108A and 108B, the common transfer chamber 102, and the transfer-side transfer chamber 110, respectively.
• the transfer-side transfer chamber 110 for example, three introduction ports 112A to 112C on which a cassette capable of holding a plurality of wafers W is placed and the wafer W is rotated to optically determine the amount of eccentricity for alignment.
• the orienter 114 to perform is linked.
• a transfer-side transfer mechanism 116 having two picks 116A and 116B for holding the wafer W and configured to bend, extend, swing, and move linearly is provided.
• a transfer mechanism 118 having two picks 118A and 118B for holding the wafer W and configured to bend and stretch and turn is provided.
• a control unit 200 is connected to the substrate processing apparatus 100. The control unit 200 controls each part of the substrate processing apparatus 100.
• the transfer port 109A of the connecting portion between the common transfer chamber 102 and one of the two load lock chambers, for example, the load lock chamber 108A is configured to transfer the wafer W to the common transfer chamber. Used as a dedicated carry-in port for loading into 102, and used as a dedicated carry-out port for carrying wafer W out of the common transfer chamber 102, using the transfer port 109B at the connection between the common transfer chamber 102 and the other load lock chamber 108B. It is done.
• the substrate processing apparatus 100 removes deposits on the wafer (for example, contamination and natural oxide film) by plasma reaction! / Chemical reaction with soot gas components and heat treatment.
• the process and the film forming process for forming a predetermined thin film on the wafer that has been subjected to the deposit removal process are continuously executed.
• the deposit removal process is performed without using water components and without using plasma.
• This deposit removal processing includes, for example, a product generation process that generates a product by chemically reacting deposits including a natural acid film deposited on a wafer and a gas component, and the generation generated on the wafer. It consists of a two-stage process: a product removal process that removes products by heat treatment.
• the product generation process is, for example, a COR (Chemical Oxide Removal) process.
• the last treatment is, for example, a PHT (Post Heat Treatment) treatment.
• COR processing involves deposits deposited on the wafer, such as oxide films such as natural oxide films, and ammonia (NH), for example.
• gas molecules such as hydrogen fluoride (HF) gas
• products mainly (N H) SiF.
• HF hydrogen fluoride
• wafers with COR processing are used.
• the COR process and the PHT process correspond to the plasmaless etching process and the dry cleaning process (dry cleaning process) (COR process power without using water components and without using plasma). Because it can remove deposits such as natural acid film).
• the selection ratio (removal rate) of the thermal acid film is high. More specifically, COR processing and PHT processing have a high thermal oxide film selectivity, but a low polysilicon selectivity. Therefore, the surface layer of the insulating film made of the SiO film, which is a thermal oxide film, and the pseudo-SiO layer having the same characteristics as the SiO film.
• the growth time of a natural oxide film having a thickness of 3 angstroms is approximately 10 minutes, whereas COR processing and PHT processing are performed.
• the growth time of a 3 ⁇ thick natural oxide film is approximately 2 hours or more. Therefore, in the cleaning process using the COR process and the PHT process, a new watermark is not generated, and the growth of the natural oxide film over time after the cleaning process is suppressed. Reliability can be improved.
• the reaction proceeds in a dry environment. Specifically, water is not used for the reaction in the COR process. Even if water molecules are generated by the COR process, the water is generated in a gas state because the COR process is performed in a substantially vacuum state. Therefore, since water molecules do not adhere to the wafer in the liquid state, a watermark or the like is not generated on the wafer surface. Furthermore, since the PHT process is performed at a high temperature, no water marks or the like are generated on the wafer surface, and OH groups are not arranged on the exposed wafer surface. Therefore, since the wafer surface is not passivated and becomes hydrophilic, the wafer surface does not absorb moisture. For this reason, it is possible to prevent a decrease in wiring reliability of semiconductor devices.
• the amount of product (complex) produced relaxes after a predetermined time. Specifically, after a predetermined time has passed, the amount of product produced will not increase even if the watermark is continuously exposed to a mixture of ammonia gas and hydrogen fluoride gas.
• the amount of product produced is determined by gas mixture parameters such as gas pressure and volumetric flow ratio. Therefore, the amount of watermark removal can be controlled easily.
• a barrier layer having a two-layer structure of, for example, a Ti film as a first film and a TiN film as a second film is formed inside a contact hole or via hole formed in a wafer.
• Membrane processing is performed.
• the extraneous matter removal process is being executed.
• the adhesion and strength of the film can be improved.
• the deposit removal process according to the present embodiment does not use plasma, it is possible to prevent charge-up damage caused by plasma from being applied to the underlying film of the wafer. For this reason, it is possible to perform a wiring force test without damage and to form a film having a good contact resistance.
• the circuit configuration tends to have a multilayer wiring structure in response to the recent demand for higher density and higher integration. For this reason, an embedding technique for electrical connection between layers such as a contact hole which is a connection portion between a lower semiconductor device and an upper wiring layer and a via hole which is a connection portion between upper and lower wiring layers is important. Yes.
• contact holes and via holes are filled with A1 (aluminum), W (tungsten), or alloys based on these.
• a T-type film For example, a Ti film and a TiN film (for example, a TiN film) are formed.
• TiSi is selectively grown in a self-aligned manner on the silicon diffusion layer at the bottom of the contact hole by reacting with the ground silicon substrate to obtain a good ohmic resistance.
• the reaction gas is TiCl gas as described above.
• a process of removing a natural oxide film formed on the base is performed prior to the film formation process.
• a natural acid film is generally removed by dilute hydrofluoric acid, but inductively coupled plasma is formed using hydrogen gas and argon gas, and the natural acid film is removed by the plasma.
• the Si diffusion layer surface was damaged and became non-uniformly amorphous.
• the Ti film was formed by plasma CVD. As a result, the TiSi crystals formed become more uneven.
• a water component is not used and plasma is used, so that it is formed on the wafer by a V-attachment removal process (for example, COR process and PHT process).
• the Ti-based film and TiN-based film are formed after removing the natural oxide film in the contact hole or via hole.
• a V-attachment removal process for example, COR process and PHT process.
• the Ti-based film and TiN-based film are formed after removing the natural oxide film in the contact hole or via hole.
• plasma-induced charge-up damage from being applied to the base before the Ti-based film and TiN-based film are formed. Therefore, even if a Ti film is formed by the plasma CVD method, a damage-free wiring force can be obtained, and a film having a good contact resistance can be formed.
• the adhesion and strength of each of the Ti film and Ti N film can be improved.
• the CVD-Ti film deposition process includes, for example, TiCl gas supply and gas
• the temperature is set to 650 ° C.
• the Ti-based film deposition process is not limited to the above.
• an SFD (Sequential Flow Deposit ion) -Ti film forming process may be executed in which a Ti film is formed by plasma CVD at a temperature lower than 650 ° C. at 400 ° C. to 450 ° C.
• SFD—Ti film deposition process for example, TiCl gas Of TiCl supply, Ar gas supply, H gas supply and plasma generation at the same time
• an ALD-Ti film deposition process using an atomic layered deposition (ALD) technique may be executed.
• the ALD-Ti film deposition process is performed, for example, by supplying only TiCl gas, then supplying Ar gas, supplying H gas, and generating plasma.
• An ALD-Ti film may be formed by performing the process of supplying gas and generating plasma at the same time.
• An ALD-Ti film may be formed by performing the steps described in (5).
• the TiN film forming process as the second film forming process is, for example, as described above.
• the substrate processing apparatus 100 removes deposits such as a natural oxide film on a wafer by using a chemical reaction and a heat treatment with a gas component that does not use a water component and does not depend on a plasma.
• the deposit removal process to be performed and the film formation process for forming a predetermined thin film on the wafer subjected to the deposit removal process are continuously performed.
• one of at least two processing chambers is configured as a deposit removal processing chamber, and the other is configured as a film forming processing chamber.
• the deposit removal processing may be performed in such a manner that a plurality of steps are continuously performed.
• the deposit removal processing chamber is constituted by a plurality of processing chambers. May be.
• the deposit removal processing chamber is configured as the deposit removal processing chamber.
• one processing chamber is configured as a product generation processing chamber, and the other processing chamber is configured as a product removal processing chamber.
• the film formation chamber may be constituted by a plurality of processing chambers. Specifically, when a first film (for example, a Ti-based film) and a second film (for example, a TiN-based film) are continuously formed, two processing chambers 104A to 104D are formed. It can be configured as a membrane treatment chamber. In this case, one processing chamber is configured as a first film deposition processing chamber for depositing the first film, and the other processing chamber is configured as a second film deposition processing chamber for depositing the second film. As described above, the configuration of each of the processing chambers 104A to 104D is determined according to the contents of the deposit removal process and the film forming process performed by the substrate processing apparatus 100.
• a wafer W in which contact holes or via holes are formed is introduced into the substrate processing apparatus 100, and the COR processing and the PHT processing as the deposit removal processing described above are continuously performed on the wafer W.
• Fig. 2 shows a configuration example (arrangement example) of the processing chamber in the substrate processing apparatus 100 when the Ti film forming process and the TiN film forming process as the film forming process are successively executed. .
• the processing chambers 104A, 104B, 104C, and 104D are configured as a COR processing chamber, a PHT processing chamber, a Ti film deposition processing chamber, and a TiN film deposition processing chamber, respectively.
• Processing in each of the processing chambers 104A to 104D is executed based on a process processing program 364 stored in program data storage means 360 provided in an EC (equipment control unit) 300 of the control unit 200 described later.
• the CPU 310 of the EC300 reads a necessary processing program from the process processing program 364 and stores it in the processing data storage means 370. Necessary information is read from the stored process processing information (for example, process recipe information) 374, and each processing is executed. Details of the configuration of the control unit 200 will be described later.
• the wafer W transfer process in the substrate processing apparatus 100 configured as shown in FIG. 2 will be described. Since the processing in the processing chambers 104A to 104D for the wafer W is performed in the order described above, the transfer path of the wafer W is as shown by the solid line arrows in FIG.
• Such wafer transfer processing is executed based on a transfer processing program 362 stored in a program data storage means 360 (described later) provided in an EC (Equipment Control Unit) 300 of the control unit 200. That is, the CPU 310 of the EC 300 reads the necessary information from the transfer processing information (for example, transfer path information) 372 stored in the processing data storage means 370 and executes the transfer processing program 362 to execute the transfer processing of the wafer. To do.
• a pre-process wafer W in which a contact hole or a via hole is formed is taken out from a cassette (including a carrier) installed in the central introduction port 112B.
• a cassette including a carrier
• one of the two load lock chambers 108A and 108B, in this case, the load lock chamber 108A is used for loading the wafer W before processing, and the other load lock chamber 108B is used for processing. Used to carry out used wafer W.
• the wafers W are accommodated in the processing chambers 104A to 104D, respectively, and the force at which each processing is completed or almost finished.
• the transfer process in the carry-in transfer chamber 110 will be described. If the processed wafer W that has been processed in the processing chamber 104D is accommodated in the loading load chamber 108B for unloading, the processed wafer W is transferred by the loading-side transfer mechanism 116. As shown in route XI1, the material is transported to and accommodated in the central introduction port 112B.
• the unprocessed wafer W accommodated in the central introduction port 112B is transferred to the orienter 114 by the loading-side transfer mechanism 116 as shown in the transfer path XI2. Then, the orientation of the unprocessed wafer W is performed by the orienter 114, and then the aligned unprocessed wafer W is loaded by the loading side transfer mechanism 116 as shown in the transfer path X13. It is transported and housed in the load lock chamber 108A. The wafer W before processing waits in the load lock chamber 108A. The above transfer operation advances the processing of wafer W. Repeated every time.
• the processed wafer W accommodated in the processing chamber 104D is taken out by the transfer mechanism 118 and transferred into the empty load lock chamber 108B as shown in the transfer path Yl1.
• the processed wafer W accommodated in the processing chamber 104C is taken out by the transfer mechanism 118, and is transferred into the empty processing chamber 104D as indicated by the transfer path Y12. Thereafter, processing in the processing chamber 104D is started.
• the processed wafer W accommodated in the processing chamber 104B is taken out by the transfer mechanism 118, and is loaded into the empty processing chamber 104C as indicated by the transfer path Y13. Thereafter, processing in the processing chamber 104C is started.
• the processed wafer W accommodated in the processing chamber 104A is taken out by the transfer mechanism 118, and is transferred into the empty processing chamber 104B as indicated by the transfer path Y14. Thereafter, processing in the processing chamber 104B is started.
• the unprocessed UE and W that were waiting in the load lock chamber 108A are taken out by the transfer mechanism 118, and are transferred into the empty process chamber 104A as shown in the transfer path Y15. Is done. Thereafter, processing in the processing chamber 104A is started.
• the configuration (arrangement) of the processing chambers 104A to 104D is not limited to that shown in FIG. Any of the processing chambers 104A to 104D may be configured as a COR processing chamber, a PHT processing chamber, a Ti film deposition processing chamber, or a TiN film deposition processing chamber.
• the wafers are transferred in the order of COR processing chamber ⁇ PHT processing chamber ⁇ Ti film deposition processing chamber ⁇ TiN film deposition processing chamber, so that processing chamber 104A ⁇ processing chamber 104B ⁇ processing The order of the chamber 104C ⁇ the processing chamber 104D is not necessary.
• FIG. 3 is a block diagram illustrating a configuration example of the control unit (system controller) 200.
• the control unit 200 includes an equipment control unit (EC Equipment Controller) 300, a plurality of module controllers (MC) 230A, 230B, 230C ..., EC300, and MC230A, 230B, 230C. And a switching hub (HUB) 220 for connecting the.
• EC Equipment Controller equipment control unit
• MC module controllers
• MC module controllers
• the EC 300 of the control unit 200 is connected to, for example, a MES (Manufacturing Execution System) 204 that manages the manufacturing process of the entire factory where the substrate processing apparatus 100 is installed, via a LAN (Local Area Network) 202. Yes.
• the MES 204 is configured by a computer, for example. In cooperation with the control unit 200, the MES 204 feeds back real-time information on various processes in the factory to the core business system (not shown) and makes decisions on various processes in consideration of the burden of the entire factory (or the determination). Support).
• the EC 300 constitutes a main control unit (master control unit) that controls the overall operation of the substrate processing apparatus 100 by supervising MC 230A, 230B, 230C,.
• the switching hub 220 switches MC230A, 230B, 230C ... as the connection destination of EC300 according to the input signal of EC300 power.
• Each of the MC230A, 230B, 230C,... Has a common transfer chamber 102 of the substrate processing apparatus 100, a processing chamber 104A to 104D, a load lock chamber 108A, 108B, a transfer chamber 110, an orienter 114, etc. Configures the sub-control unit (slave control unit) that controls the operation.
• Each M C230A, 230B, 230C ... has a DIST (Distribution) board 234A, 234B, Each I / O (input / output) module 236A, 236B, 236, for example, via the GHOST network 206 by 234C. ⁇ ⁇ ⁇ [This is connected!
• the GHOST network 206 is a network realized by an LSI called GHOST (General High-Speed Optimum Scalable Transceiver) installed in MC (module control unit). Up to 31 I / O modules can be connected to the GHO ST network 206.
• MC corresponds to the master and the I / O module corresponds to the slave.
• Each I / O module 236A, 236B, 236C ... is a plurality of IZO units connected to each component of each module (hereinafter referred to as "end device") such as the processing chambers 104A to 104D. 238A, 238 ⁇ , 238C... Power, and supply (transmit) control signals to each end device and receive (transmit) output signals from each end device.
• end device such as the processing chambers 104A to 104D.
• examples of the end device of the processing chamber 104 include a mass flow controller that controls the flow rate of the gas introduced into the processing chamber 104 and an APC valve that controls exhaust from the processing chamber 104.
• Each GHOST network 206 is also connected to an IZO board (not shown) that controls input / output of digital signals, analog signals, and serial signals in the I / O units 238A, 238B, 238C,.
• FIG. Fig. 4 is a block diagram showing a configuration example of EC300.
• the EC300 is a RAM (Random Access Memory) with a CPU (Central Processing Unit) 310 that constitutes the EC main unit and a memory area that is used for various data processing performed by the CPU 310.
• RAM Random Access Memory
• CPU Central Processing Unit
• display means 330 composed of a liquid crystal display that displays the operation screen and selection screen, etc., input of various data such as process recipe input and editing by the operator, and process recipe processing to a predetermined storage medium 'Input / output means 340 that can output various data such as log output, and notification means 350 such as an alarm device (for example, a buzzer) that notifies when an abnormality such as leakage occurs in the substrate processing apparatus 100; It is equipped with.
• an alarm device for example, a buzzer
• the EC 300 has a program data storage means 360 for storing processing programs for executing various processes of the substrate processing apparatus 100, and a program data storage means 360 for executing the processing programs.
• Processing data storage means 370 in which information (data) necessary for the storage is stored.
• the program data storage means 360 and the processing data storage means 370 are constructed in a storage area such as a node disk (HDD).
• CPU 310, RAM 320, display means 330, input / output means 340, notification means 350, program data storage means 360, processing data storage means 370, etc. are a bus line such as a control bus or a data bus. Connected by. The nose line is also connected to the switching hub 220 and the like.
• the CPU 310 reads necessary programs and necessary data from the program data storage means 360 and the processing data storage means 370 as necessary, and executes various processing programs.
• each of the processing chambers 104A to 104D for example, when the wafer W is subjected to processing such as the above-described COR processing, PHT processing, Ti film forming processing, TiN film forming processing, etc.
• the CPU 310 reads the process processing program to be executed in the program data storage means 360 and reads out the process recipe information corresponding to the processing to be executed from the process processing information 374 in the processing data storage means 370. Each process is executed based on this.
• the CPU 310 performs a desired end device via the MC230, the GHOST network 206, and the IZO module 236 in the IZO module 236, which control the switching hub 220, the processing chambers 104A to 104D, according to each processing program. Each process is executed by transmitting a control signal to the.
• the CPU 310 sends ammonia gas in the processing chamber 104A by transmitting a control signal to the mass flow controller of the gas introduction system in the processing chamber 104A (for example, the mass flow controller of the ammonia gas supply pipe and the hydrogen fluoride gas supply pipe).
• the volume flow ratio of hydrogen fluoride gas and the volume flow ratio of hydrogen fluoride gas are adjusted to a desired value, while a control signal is sent to the vacuum pump (for example, ⁇ ) and pressure control valve (for example, APC valve) in the exhaust system. Is adjusted to a desired value.
• the pressure gauge sends the pressure value in the processing chamber 104A to the CPU 310 of the EC300 as an output signal.
• the CPU 310 determines (corrects) the mass flow controller of the ammonia gas supply pipe and the hydrogen fluoride gas supply pipe, the control parameters of the APC valve and the TMP, etc., based on the transmitted pressure value in the processing chamber 104A.
• the CPU 310 transmits a control signal to the gas flow system mass flow controller (for example, the mass flow controller of the nitrogen gas supply pipe) and the exhaust system pressure adjustment valve (for example, the APC valve) of the processing chamber 104B. Adjust the pressure in 104B to the desired value.
• the temperature of Ueno and W is adjusted to the desired temperature by sending a control signal to the stage heater.
• the pressure gauge sends the pressure value in the processing chamber 104B to the CPU 310 of the EC300 as an output signal.
• the CPU 310 determines (corrects) the control parameters of the nitrogen gas supply pipe MFC and the APC valve 69 based on the transmitted pressure value in the processing chamber 104B.
• control unit 200 shown in Fig. 3 multiple end devices are not directly connected to EC300, so the IZO unit connected to multiple end devices is modularized to form a ⁇ module. is doing. Because it is connected to EC300 via this module power MC230 and switching knob 220, the communication system can be simplified.
• the control signal transmitted by the CPU 310 of the EC300 includes the address of the collar connected to the desired end device and the address of the module including the collar. Therefore, the switching hub 220 can refer to the address of the input module in the control signal, and the GHOST 206 of the MC230 can also refer to the address of the I / O section in the control signal. That is, there is no need for the switching hub 220 and MC 230 to inquire the CPU 310 about the control signal transmission destination. This enables smooth transmission of control signals.
• the substrate processing apparatus 100 before the film forming process, deposits such as a natural oxide film attached to the wafer do not use plasma.
• deposits such as a natural oxide film attached to the wafer do not use plasma.
• a kimono removal process for example, COR process and dredging process
• film deposition can be performed continuously without exposing the wafer to the atmosphere, the adhesion and strength of the film can be improved.
• the natural oxide film can be removed without using plasma, a wiring force without damage can be achieved, and a film having good contact resistance can be formed.
• the COR process and the PHT process are effective as the previous processes in the process of forming the contact hole or via hole barrier layer.
• the film forming process is not limited to this, and COR processing and PHT processing may be performed as a pre-process of other film forming processes as follows!
• the gate insulating film of MOS devices has recently been required to have a thickness of less than lnm, equivalent to a silicon oxide film. This corresponds to a thickness of 3-4 atomic layers. At such a thin thickness, the silicon oxide film cannot be used due to an increase in tunneling current, diffusion of elements doped in the gate electrode, and a decrease in reliability. For this reason, the development of films with a high dielectric constant (so-called High-K films) is proceeding with great speed. That is, ZrO, HfO
• Transition metal oxide films such as 2 2, rare earth oxide films such as La 2 O, and silicates thereof
• composition transition layer composed of silicate is formed between these high dielectric constant films and the Si substrate, and a composition consisting of an intermediate state of Si intermediate state between the silicate layer and the Si substrate.
• a transition layer is formed. Therefore, in order to prevent these composition transition layers from being formed, it is necessary to first form a base oxide film (for example, an SiO film) as an oxidation prevention layer. like this
• a gate insulating film with such a high dielectric (High-K) material control at the atomic layer level is required. For this reason, before performing the film formation process of the gate insulating film, a deposit removal process (for example, a COR process and a PHT process), which is dry cleaning, is performed without using plasma to perform deposits such as a natural oxide film. By removing the film, the adhesion and strength of the film can be improved.
• a deposit removal process for example, a COR process and a PHT process
• a gate dielectric film (high dielectric gate dielectric film) of such a high dielectric (High-K) material it is very thin, preferably lnm on the wafer, that is, on the silicon substrate. After the base oxide film such as SiO film with the following thickness is formed first, High-K
• a film for example, a silicate film such as HfSiO
• the base oxide film is formed.
• the reason corresponds to the first film forming process
• the High-K film forming process corresponds to the second film forming process.
• the base oxide film deposition process (first film deposition process) is performed, for example, by radical oxidation using an ultraviolet photoexcited oxygen radical.
• a base oxide film having a film thickness equivalent to two to three molecular layers can be formed stably and with good reproducibility by the treatment of a silicon substrate with ultraviolet light-excited radical acid.
• an oxygen atomic layer forms a SiO atom layer of, for example, about 0.5 nm as a base oxide film on the surface of the silicon substrate.
• the processing time is, for example, 300 seconds.
• the high-K film deposition process for example, metalorganic chemical vapor deposition (on the wafer with the base oxide film formed by the base oxide film deposition process (A metal oxide film (for example, a silicate film such as HfSiO) is formed by the MOCVD method.
• a metal oxide film for example, a silicate film such as HfSiO
• MOCVD method Metalorganic chemical vapor deposition
• a source gas When a source gas is introduced onto the substrate in a heated state, the source gas is decomposed to form a thin film of a silicate film such as HfSiO on the substrate. Processing time in this case and
• the substrate processing apparatus 100 continuously performs COR processing, PHT processing, base oxide film forming processing (UV processing), and high-K film forming processing (MOCVD processing).
• At least two of the processing chambers 104A to 104D are configured as deposit removal processing chambers that perform COR processing and PHT processing, respectively, and the other two processing chamber forces are oxidized. It is configured as a film formation chamber that performs film formation (UV treatment) and high-K film formation (MOCVD).
• the processing chamber 104A, 104B, 104C, and 104D forces in the substrate processing apparatus 100 are respectively COR processing chamber, PHT processing chamber, oxide film deposition processing (UV processing) chamber, and High-K film deposition.
• Figure 5 shows an example of a process (MOCVD process) chamber.
• the EC (equipment control unit) 300 program of the control unit 200 described above respectively. It is executed based on the process processing program 364 stored in the data storage means 360.
• the CPU 310 of the EC300 reads out the necessary processing program from the process processing program 364 and reads out the necessary information from the process processing information (for example, process recipe information) 374 stored in the processing data storage means 370 to perform each processing. Execute.
• FIG. 6 is a schematic configuration diagram of a substrate processing apparatus according to the second embodiment. Shown in Figure 6 As described above, in the substrate processing apparatus 101, a plurality of vacuum processing apparatuses having a plurality of processing chambers and a common transfer chamber are connected. The present invention can also be applied to the substrate processing apparatus 101 having such a configuration.
• the common transfer chamber in the substrate processing apparatus 100 shown in FIG. 1 is represented as the first common transfer chamber 102.
• Another second common transfer chamber 120 is interposed between the first common transfer chamber 102 and the two load port chambers 108A and 108B.
• the second common transfer chamber 120 has a substantially polygonal shape (eg, an irregular heptagon), and two processing chambers 104E and 104F are connected to the two sides via gate valves 106E and 106F, respectively.
• the vacuum processing apparatus having the first common transfer chamber 102 and the four processing chambers (process chambers 104A to 104D) connected to the first common transfer chamber 102 is an example of the first vacuum processing apparatus.
• the two processing chambers (processing chambers 104E and 104F) connected thereto are examples of the second vacuum processing apparatus.
• a pass section 122 that allows the two common transfer chambers 102 and 120 to communicate with each other and to temporarily hold the wafer W.
• the wafer W is temporarily held by the pass portion 122.
• the shape of the first common transfer chamber 102 is formed into an irregular heptagon in order to connect the path portion 122.
• a gate valve 126 is provided at the junction between the first common transfer chamber 102 and the pass portion 122. By opening and closing the gate valve 126, communication between the common transfer chambers 102 and 120 can be established and shut off.
• the processing chamber 104E and the processing chamber 104F as with the other processing chambers 104A to 104D, mounting tables 105E and 105F for holding the wafer W are provided.
• the second common transfer chamber 120 similarly to the first common transfer chamber 102, a transfer mechanism 124 having two picks 124A and 124B that can be bent and stretched is provided.
• the transfer mechanism 124 of the second common transfer chamber 120 can efficiently transfer the wafer by the same operation as the transfer mechanism 118 of the first common transfer chamber 102.
• the transfer port 152A at the connecting portion between the second common transfer chamber 120 and one of the two load lock chambers, for example, the load lock chamber 108A, allows the wafer W to pass through the second common transfer chamber 120.
• the transfer port 152B at the connection between the second common transfer chamber 120 and the other load lock chamber 108B is used as a dedicated transfer port for transferring the wafer W out of the second common transfer chamber 120. Used as
• the substrate processing apparatus 101 also removes deposits such as a natural oxide film on the wafer by using a chemical reaction with a gas component such as water and a heat treatment without using a water component.
• a gas component such as water and a heat treatment without using a water component.
• the kimono removal process and the film forming process for forming a predetermined thin film on the wafer that has been subjected to the deposit removal process are continuously executed! / Speak.
• At least one of the two processing chambers is configured as a deposit removal processing chamber, and the other is configured as a film forming processing chamber.
• the deposit removal processing may be performed in such a manner that a plurality of steps are continuously performed.
• the deposit removal processing chamber is constituted by a plurality of processing chambers. May be.
• Two processing chambers may be configured as the deposit removal processing chamber.
• one processing chamber is configured as a product generation processing chamber, and the other processing chamber is configured as a product removal processing chamber.
• the film formation chamber may be constituted by a plurality of processing chambers. Specifically, when a first film (for example, a Ti-based film) and a second film (for example, a TiN-based film) are continuously formed, two processing chambers 104A to 104F are formed. It can be configured as a membrane treatment chamber. In this case, one processing chamber is configured as a first film deposition processing chamber for depositing the first film, and the other processing chamber is configured as a second film deposition processing chamber for depositing the second film. As described above, the configuration of each of the processing chambers 104A to 104F is determined according to the contents of the deposit removal process and the film forming process performed by the substrate processing apparatus 101.
• a wafer W in which contact holes or via holes are formed is introduced into the substrate processing apparatus 101, and the wafer W is subjected to the above-described deposit removal processing.
• Example of configuration of processing chamber in substrate processing apparatus 101 when Ti film forming process and TiN film forming process as film forming process are executed continuously after COR process and PHT process are executed ( Figure 7 shows an arrangement example.
• the processing chambers 104A, 104B, 104C, and 104D are configured as a COR processing chamber, a PHT processing chamber, a Ti film deposition processing chamber, and a TiN film deposition processing chamber, respectively.
• a pre-process wafer W in which a contact hole or a via hole is formed is taken out from a cassette (including a carrier) installed in the central introduction port 112B.
• a cassette including a carrier
• one of the two load lock chambers 108A and 108B, in this case, the load lock chamber 108A is used for loading the wafer W before processing, and the other load lock chamber 108B is used for processing. Used to carry out used wafer W.
• the wafers W are accommodated in the processing chambers 104A to 104D, respectively, and the force at which each processing is completed or almost finished.
• the transfer processing of the wafer W in the transfer-side transfer chamber 110 shown in FIG. 7 is the same as the case shown in FIG. Therefore, detailed description thereof is omitted.
• the transfer paths X21 to X23 shown in FIG. 7 correspond to the transfer paths XI1 to X13 shown in FIG.
• the transfer process of the wafer W in the first common transfer chamber 102 is almost the same as the case shown in FIG. 2, but the transfer process in the first common transfer chamber 102 in FIG. W is conveyed to and from the pass unit 122. This is different from the case of FIG. 2 in which the wafer W is transferred between the load lock chambers 108A and 108B.
• the transport paths Y21 to Y25 shown in FIG. 7 correspond to the transport paths ⁇ 11 to ⁇ 15 shown in FIG.
• the wafer W is also transferred to the pass section 122 by the processing chamber 104D
• the transfer path ⁇ 25 the wafer W is transferred from the pass section 122 to the process chamber 104A.
• the wafer W before processing in which the contact hole or via hole is formed in this way is processed in COR chamber, PHT processing, Ti film deposition processing, TiN film in the processing chamber 104A to processing chamber 104D, respectively.
• the film forming process is continuously performed.
• the processing chamber 104A to the processing chamber 104D connected to the first common transfer chamber 102 are respectively connected to the COR processing chamber and the PHT processing chamber.
• Ti film deposition chamber, and TiN film deposition chamber, the processing chambers 104E and 104F connected to the second common transfer chamber 120 are the processing chambers that perform other processing on the wafer. Can be configured.
• the processing chamber 104E or the processing chamber 104F can be configured as a metal-based film deposition chamber for depositing a tungsten film or the like to be embedded in a contact hole or a via hole.
• the wafer W processed by the processing chamber 104A to the processing chamber 104D is transferred to the processing chamber 104E or 104F, and the tungsten film is formed on the Ti film and TiN film barrier layer formed on the wafer W. Can be formed.
• the plasmaless cleaning process in the contact hole or via hole, the Ti layer and TiN film deposition process, and the tungsten film filling process can be performed in succession.
• the configuration (arrangement) of the processing chamber of the substrate processing apparatus 101 is not limited to the above.
• the base oxide film forming process (UV process) and the high-K film forming process (MOCVD process) are performed as the film forming process, as shown in FIG.
• Each may be configured as a base oxide film deposition process (UV process) chamber and a high-K film deposition process (MOCVD process) chamber. Since the transport process in this case is the same as that shown in FIG. 7, a detailed description thereof will be omitted.
• the processing chamber 104A to the processing chamber 104D connected to the first common transfer chamber 102 are configured as film formation processing chambers, and the processing chambers 104E and 104F connected to the second common transfer chamber 120 are removed from the deposits. It may be configured as a post-processing chamber (for example, a COR processing chamber and a PHT processing chamber). In this case, for example, as shown in FIG. 9, the processing chambers 104A to 104D connected to the first common transfer chamber 102 may be configured as two systems of film forming processing chambers.
• the processing chambers 104A and 104B connected to the first common transfer chamber 102 are connected to the first system, that is, the first ITi film deposition processing chamber and the first ITiN film.
• the film forming chamber is configured, and the processing chambers 104C and 104D are configured as the second system, that is, the second Ti film forming chamber and the second TiN film forming chamber.
• the film forming process may be executed using the same process recipe, or the film forming process may be executed using process recipes having different gas flow rates and pressures, for example. Good.
• the processing chamber 104E and the processing chamber 104F connected to the second common transfer chamber 120 are configured as a COR processing chamber and a PHT processing chamber, respectively.
• the transfer process of the substrate processing apparatus 101 configured as shown in FIG. 9 will be described.
• the wafers W are processed in the order of the processing chambers 104E and 104F and accommodated in the pass unit 122.
• the wafer W is transferred from the pass section 122 to the processing chambers 104A and 104B in that order and processed (first system).
• the wafer W can be transferred from the pass section 122 to the processing chambers 104C and 104D in that order and processed (second system).
• the processing power of these two systems can be selectively executed. These two systems may be executed in parallel, or only one of them may be executed continuously.
• the transfer processing of the wafer W in the transfer-side transfer chamber 110 shown in FIG. 9 is the same as that shown in FIG. Therefore, detailed description thereof is omitted.
• the transfer routes X31 to X33 shown in FIG. 9 correspond to the transfer routes XI1 to X13 shown in FIG.
• the transfer mechanism 124 has already processed the wafer W in the process chamber 104B or the process chamber 104D accommodated in the pass unit 122. Wafer W is taken out and transferred into an empty load lock chamber 108B as shown in transfer path Z31. Next, the wafer W that has been processed in the processing chamber 104F is taken out by the transfer mechanism 124, and is transferred into the empty path unit 122 as indicated by the transfer path Z32. Subsequently, the processed weno and W are taken out in the processing chamber 104E by the transfer mechanism 124, and are transferred into the empty processing chamber 104F as shown in the transfer path Z33. Thereafter, processing in the processing chamber 104F is started.
• the unprocessed wafer W waiting in the load lock chamber 108A is taken out by the transfer mechanism 124 and transferred into the empty process chamber 104E as indicated by the transfer path Z34. Thereafter, processing in the processing chamber 104E is started.
• the processed wafer W accommodated in the processing chamber 104B is taken out by the transfer mechanism 118 and transferred to the transfer path Ya31. As shown in FIG.
• the processed wafer W accommodated in the processing chamber 104A is taken out by the transfer mechanism 118, and is transferred into the empty processing chamber 104B as indicated by the transfer path Ya32. Thereafter, processing in the processing chamber 104B is started.
• the wafer W transferred from the second common transfer chamber 120 into the pass unit 122 is transferred to the transfer mechanism 1.
• processing in the processing chamber 104A is started.
• the processed wafer W accommodated in the processing chamber 104D is taken out by the transfer mechanism 118 and transferred to the transfer path.
• the sheet is transported to an empty path unit 122.
• the processed wafer W accommodated in the processing chamber 104C is taken out by the transfer mechanism 118, and is loaded into the empty processing chamber 104D as indicated by the transfer path Yb32. Thereafter, processing in the processing chamber 104D is started.
• the wafer W transferred from the second common transfer chamber 120 into the pass unit 122 is transferred to the transfer mechanism 1.
• processing chambers 104A and 104B processing chambers 104A and 104B, processing chambers 104C and 104D
• the COR process, the PHT process, the Ti film forming process, and the TiN film forming process are successively performed on the unprocessed wafer W on which the contact holes or via holes are formed.
• the processing chamber 104A to the processing chamber 104D connected to the first common transfer chamber 102 are divided into two systems of Ti film deposition processing chamber and TiN film. Since it is configured as a film formation chamber, the throughput of the entire system can be greatly improved by executing these two systems in parallel. Because the deposition process (Ti film deposition process, TiN film deposition process) is usually more time consuming than the deposit removal process (COR process, PHT process here), If the cleaning process such as the COR process and PHT process is completed while the film forming process is being performed in the processing chamber of one system, the film forming process can be performed immediately in the processing system of the other system. It is.
• the film forming chamber is concentrated on the side of the second common transfer chamber 120 (second vacuum processing apparatus), it can be easily distinguished from the processing chamber of the first common transfer chamber. Yes, that is, the efficiency in cleaning each film forming chamber and the second common transfer chamber 120 is high.
• each vacuum processing apparatus can be cleaned, which is efficient.
• FIG. 10 is a schematic configuration diagram showing an example of a substrate processing apparatus according to the third embodiment.
• a measurement processing chamber 400 capable of measuring the film thickness of the wafer W and measuring particles (including the above deposits) is attached to the substrate processing apparatus 101 shown in FIG. Is.
• the measurement processing chamber 400 may be attached to any position of the sides of the first common transfer chamber 102 and the second common transfer chamber 120 as long as they are vacant. In the configuration example shown in FIG. 10, the measurement processing chamber 400 is attached to the first common transfer chamber 102.
• the measurement processing chamber 400 is controlled by an EC (equipment control unit) 300 of the control unit 200 shown in FIG.
• an MC (module control unit) that controls the measurement processing chamber 400 is connected via the EC 300 and the switching hub 220 of the control unit 200 shown in FIG.
• Each part of the measurement processing chamber 400 is connected to, for example, an IZO module 236K connected to the MC via a DISTC board.
• the measurement processing chamber 400 includes a stage (turn table) 405 for placing and holding the wafer W, and a motor 407 for rotating the stage 405.
• the motor 407 is driven based on a drive signal from a motor drive unit 408 configured by, for example, a motor drive.
• the motor drive unit 408 is connected to the EC 300 via, for example, the I / O module 236 and the MC, and is controlled by a control signal from the MC or EC 300.
• the measurement processing chamber 400 of the present embodiment includes a film thickness measurement unit 410 for measuring the film thickness of a thin film or the like formed on the wafer W, and pattern recognition by capturing a surface image of the wafer W.
• An image processing unit 420 for performing measurement and a particle measurement unit 430 for measuring particles on the wafer W are provided.
• the film thickness measurement unit 410 includes, for example, a light source 414 that emits laser light toward the wafer W, a light receiving unit 416 that receives light emitted from the light source 414 and reflected by the wafer W, and a light receiving unit 416. And a signal processing unit 412 for processing the received light signal.
• the signal processing unit 412 is connected to the EC 300 via, for example, an I / O module 236. As a result, the EC 300 can receive data relating to the film thickness on the wafer W (eg, film thickness data, film thickness evaluation data, etc.) via the signal processing unit 412.
• the film thickness measurement unit 410 measures the film thickness using the laser light from the light source 414, for example, by spectroscopic ellipsometry.
• the spectroscopic ellipso method is an amount in which the amount of change in polarization (amplitude and phase difference) between the incident light of the laser beam and the reflected light from the wafer is proportional to the film thickness X optical constant. Based on the above, the film thickness is measured.
• the image processing unit 420 includes an image sensor 424 such as a CCD (Charge Coupled Devices) that captures a surface image of the wafer W, and a signal processing unit 422 that processes an image signal from the image sensor 424. is doing.
• the signal processing unit 422 is connected to the EC300 via the IZO module 236K. As a result, the EC 300 can receive the data related to the surface image of the wafer W via the signal processing unit 422.
• the particle measuring unit 430 includes, for example, a light source 434 that emits laser light toward the wafer W, a light receiving unit 436 that receives scattered light emitted from the light source 434 and scattered on the wafer W, and a light receiving unit 436. And a signal processing unit 432 for processing the received light signal received at.
• the signal processing unit 432 is connected to the EC 300 via a module 236. As a result, the EC 300 can receive data (for example, pixel data, particle evaluation data, etc.) regarding particles on the wafer W via the signal processing unit 432.
• FIG. 12 is a block diagram illustrating a configuration example of the EC 300 according to the third embodiment.
• the measurement processing program 460 of the measurement processing chamber 400 is added to the program data storage means 360 shown in FIG. 4, and the measurement processing information 470 is added to the processing data storage means 370.
• the film thickness measurement unit 410, the image processing unit 420, and the particle measurement unit 430 are each configured as an optical system unit, and each optical system unit is configured to be movable in the radial direction of the wafer W. Yes.
• the entire wafer surface can be measured by moving each optical system unit to the central force end of the wafer W while holding and rotating the wafer W on the stage 405.
• the moving distance (scanning distance) of the optical system unit can be shortened, and the measurement processing chamber 400 can be saved in space. In other words, the measurement processing chamber 400 itself can be reduced in size.
• the film thickness measurement unit 410, the image processing unit 420, and the particle measurement unit 430 may be configured as a single movable optical system unit.
• the film thickness measurement unit 410 and the particle measurement unit 430 may be configured as a single movable optical system unit, and the image processing unit 420 may be fixed.
• the measurement processing program 460 controls each part of the measurement processing chamber 400, such as the film thickness measurement program 462, the image processing program 464, the particle measurement program 466, and the stage drive program 468, and performs the measurement processing. Various programs for evaluating the measurement results are included.
• the measurement processing information 470 includes film thickness evaluation information 472, particle evaluation information 474, and measurement condition recipe 476.
• the stage drive program 468 is a program that controls the motor 407 of the stage 405 to control the rotation timing, rotation speed, rotation speed, and the like of the wafer W.
• the film thickness measurement program 462 controls each part of the film thickness measurement unit 410 based on the measurement condition recipe 476 to execute the film thickness measurement of Weno and W, and based on the measurement result, the film thickness measurement program 462 An evaluation is performed. Specifically, for example, by moving the film thickness measurement unit 410 while rotating the wafer W, irradiating the wafer W with the laser light from the light source 414 and receiving the light reflected by the wafer W, The film thickness of the wafer W is measured.
• film thickness measurement unit 410 is moved, and a laser beam with a light source of 414 is irradiated toward the measurement point of the wafer W to measure the film thickness of the wafer W. I do. If there are multiple measurement points for Ueno and W, irradiate each measurement point with laser light and measure the film thickness at each measurement point. Thus, for example, film thickness data can be obtained as a measurement result. Based on this film thickness data, for example, film thickness evaluation data for evaluating whether a target film thickness has been formed! / Is obtained and stored as film thickness evaluation information 472.
• the image processing program 464 controls each part of the image processing unit 420 based on the measurement condition recipe 476, captures the surface image of the wafer W by the image sensor 424, and recognizes the pattern based on the imaging result.
• the image processing such as is performed. For example, by performing pattern recognition processing based on the surface image of the wafer W, it is possible to specify a measurement point that is a target for film thickness measurement or particle measurement of the wafer W using pattern matching.
• the particle measurement program 466 is based on the measurement condition recipe 476 and controls each part of the particle measurement unit 430 to execute the particle measurement on the surface of the wafer W and based on the measurement result.
• Particle evaluation is performed. Specifically, for example For example, by moving the particle measuring unit 430 while rotating the wafer W and irradiating the wafer W with the laser light from the light source 434 and receiving the scattered light, the partial measurement of the wafer W is performed.
• a measurement result for example, pixel data associated with the presence or absence of particles is obtained.
• particle evaluation data consisting of binary data corresponding to whether or not the pixel data with a partition exceeds the set value is created. Memorized.
• the substrate processing apparatus 103 also removes deposits such as a natural oxide film on the wafer by using a chemical reaction with a gas component such as a plasma without using a water component and a heat treatment.
• the kimono removal process and the film forming process for forming a predetermined thin film on the wafer that has been subjected to the deposit removal process are continuously executed! / Speak.
• a wafer W on which contact holes or via holes are formed is introduced into the substrate processing apparatus 103, and the COR processing and the PHT processing as the deposit removal processing described above are continuously performed on the wafer W.
• Fig. 13 shows a configuration example (arrangement example) of the processing chamber in the substrate processing apparatus 103 when the Ti film forming process and the TiN film forming process as the film forming process are successively executed. .
• the processing chambers 104A, 104B, 104C, and 104D forces connected to the first common transfer chamber 102 are respectively COR processing chamber, PHT processing chamber, Ti film deposition processing chamber, and TiN film. It is configured as a film formation chamber.
• the wafer W transfer process in the substrate processing apparatus 103 configured as shown in FIG. 13 will be described. Since the processing in the processing chambers 104A to 104D for the wafer W is performed in the order described above, the transfer path of the wafer W is as shown by a solid arrow in FIG.
• a pre-process wafer W in which a contact hole or a via hole is formed is taken out from a cassette (including a carrier) installed in the central introduction port 112B.
• a cassette including a carrier
• One of the two load lock chambers 108A and 108B The other load lock chamber, here the load lock chamber 108A, is used for loading the unprocessed wafer W, and the other load lock chamber 108B is used for unloading the processed wafer.
• the wafer W that has undergone COR processing and PHT processing is subjected to film thickness measurement and particle measurement in the measurement processing chamber 400, and then the next film formation processing (Ti film formation processing and TiN film formation). (Membrane processing).
• the wafers W are accommodated in the processing chambers 104A to 104D and the measurement processing chamber 400, respectively, and the force at which each processing is finished or almost finished.
• the transfer processing of the wafer W in the loading-side transfer chamber 110 and the transfer processing of the wafer W in the second common transfer chamber 120 shown in FIG. 13 are the same as those shown in FIG. Therefore, the detailed explanation is omitted.
• the transport paths X41 to X43, Z41, and Z42 shown in FIG. 13 correspond to the transport paths X21 to X23, Z21, and Z22 shown in FIG. 7, respectively.
• the transfer process of the wafer W in the first common transfer chamber 102 will be described.
• the wafer W is stored in the processing chamber 104D by the transfer mechanism 118, and the processed wafer W is taken out and transferred into the empty path unit 122 as indicated by the transfer path Y41.
• the processed wafer W accommodated in the processing chamber 104C is taken out by the transfer mechanism 118, and is loaded into the empty processing chamber 104D as indicated by the transfer path Y42. Thereafter, processing in the processing chamber 104D is started.
• the wafer W that has been subjected to the measurement processing and stored in the measurement processing chamber 400 is taken out by the transfer mechanism 118, and is loaded into the empty processing chamber 104C as indicated by the transfer path Y43. Thereafter, processing in the processing chamber 104C is started.
• the processed wafer W accommodated in the processing chamber 104B is taken out by the transfer mechanism 118, and is loaded into the empty measurement processing chamber 400 as indicated by the transfer path Y44. Thereafter, measurement processing in the measurement processing chamber 400 is started.
• the processed wafer W accommodated in the processing chamber 104A is taken out by the transfer mechanism 118, and is transferred into the empty processing chamber 104B as indicated by the transfer path Y45. Thereafter, processing in the processing chamber 104B is started.
• processing chamber 104A, 104B, 3 ⁇ 4 processing chamber 400, processing chamber 104C, 104D [trowel, respectively] COR processing, PHT processing, measurement processing, Ti film deposition processing, and TiN film deposition processing are performed in succession.
• deposits such as a natural oxide film are removed from the inner wall and bottom of the contact hole or via hole of the wafer W by COR processing and PHT processing. Then, in the measurement processing chamber 400, film thickness measurement and particle measurement are performed, and it is confirmed whether or not deposits such as natural acid film have been (sufficiently) removed. Then, a barrier layer composed of a Ti film and a TiN film is formed by the following Ti film formation process and TiN film formation process. As a result, the noria layer can be formed in a state where the deposits such as the natural oxide film are reliably removed from the wafer W.
• the measurement processing is performed in the measurement processing chamber 400 continuously after the deposit removal processing (COR processing and PHT processing). Therefore, whether or not the wafer deposit removal process has been properly executed can be reliably inspected by measuring the film thickness and particles (including deposits) of the wafer W concerned. Also, it is possible to expose the wafer to the atmosphere immediately after applying the deposit removal treatment to the wafer. Therefore, the measurement process can be performed continuously in the measurement processing chamber 400, so that the surface on which the deposits on the wafer have been removed (for example, the exposed surface such as the bottom of a contact hole formed on the wafer) is again applied. Inspection can be performed by measuring the film thickness on the wafer and performing the partial measurement without adhering to the natural oxide film. As a result, the effect of the deposit removal treatment can be accurately and reliably inspected.
• the process recipe (process conditions for the deposit removal process) of the deposit removal process (COR process and PHT process) is corrected based on the measurement results of the film thickness measurement and particle measurement of the wafer W. You may do it. In this way, the deposit removal process (COR process and PHT process) can always be performed properly. As a result, the deposit removal process according to the actual processing result can be executed, so that deposits including the natural oxide film can be reliably removed from the wafer W.
• the next film formation process (film formation step) is determined.
• the next film forming process can be performed. It may be determined that execution is impossible.
• the next film forming process can be executed in a state where the deposits including the natural oxide film on the wafer W are always removed. Therefore, the film quality of the film formed on the wafer W is uniform. Sex can be secured.
• the measurement processing in the measurement processing chamber 400 performed after the deposit removal processing includes the following in addition to the measurement for checking whether or not the deposit removal processing as described above is properly performed.
• the film thickness measurement of the base film on which the film forming process is performed may be included.
• the film thickness on the surface of the wafer subjected to the deposit removal process (for example, the exposed surface of the bottom of the contact hole formed on the wafer) is measured, and the following While film thickness measurement is performed on a base film (for example, a base film formed on a wafer) on which film formation processing is performed, adhesion measurement on the surface on which the deposit removal process has been performed is also performed.
• the film thickness measurement for inspecting whether the deposit removal process has been properly executed and the film thickness measurement of the base film to be subjected to the next film formation process are simultaneously executed.
• the time required for the measurement process can be significantly reduced.
• the measurement process in the measurement process chamber 400 may be performed after the film formation process.
• the film thickness of the film formed by the film forming process can be measured.
• the process recipe (process conditions for the film formation process) for executing the film formation process can be corrected.
• the measurement process in the measurement process chamber 400 may be performed before the deposit removal process.
• FIG. 14 is a flowchart illustrating an example of the measurement process.
• a measurement condition recipe is set in step S110.
• conditions such as the rotational speed of the stage 405 and the measurement range are set.
• step S120 the wafer W is loaded into the measurement processing chamber 400, and in step S130, film thickness measurement and particle measurement are performed.
• the wafer is aligned by, for example, notch detection, and the surface image of the wafer W is captured by the image processing unit 420 as necessary to perform pattern recognition. .
• film thickness measurement and particle measurement are performed on a measurement point (or measurement range) obtained by pattern recognition.
• the particle measurement unit 430 measures the particle on the surface of the wafer W while rotating the wafer W. Is done.
• step S140 each evaluation data is created based on the measurement results of the film thickness measurement and the particle measurement.
• step S150 the obtained measurement results and evaluation data are transmitted to EC 300 of control unit 200. Thereafter, in step S140, the wafer W is unloaded.
• film thickness measurement and particle measurement can be performed immediately without changing the wafer state by, for example, forming a natural acid film on the wafer w.
• film thickness measurement and particle measurement can be performed immediately after the COR process and the PHT process without exposing the wafer W to the atmosphere.
• the next film forming process can be executed without, for example, a natural oxide film adhering to the wafer W.
• the measurement processing chamber 400 is configured as one module (unit) of the substrate processing apparatus.
• the measurement processing chamber 400 can be easily attached to an existing substrate processing apparatus.
• the measurement processing can be executed simply by loading the wafer W into the measurement processing chamber 400. In other words, the time and labor required for film thickness measurement and particle measurement can be greatly reduced compared to the case where the measurement processing chamber is configured as a separate device.
• the footprint is greatly increased compared to installing two devices so that each measurement can be performed in another device. Can be reduced. Further, since the measurement processing chamber 400 itself can be made compact, the footprint can be further reduced.
• FIG. 13 shows the case where the natural oxide film is removed by performing the measurement process in the measurement processing chamber 400 after the COR process and the PHT process.
• the present invention is not necessarily limited to this. Even after the film forming process (Ti film forming process, TiN film forming process), a measurement process is performed in the measurement processing chamber 400 to check whether or not a desired film thickness is formed. Good.
• the measurement processing in the measurement processing chamber 400 may perform both the film thickness measurement and the particle measurement, or only V deviation.
• the configuration of the processing chamber of the substrate processing apparatus 103 is not limited to that shown in FIG.
• the processing chambers 104C and 104D are respectively formed in the base oxide film formation processing.
• UV processing UV processing
• MOCVD processing High-K film deposition processing
• the transport process in this case is the same as that shown in FIG.
• the mounting position of the measurement processing chamber 400 is not limited to the case shown in FIG.
• a portion of the first common transfer chamber 102 and the second common transfer chamber 120 where the processing chamber can be attached can be installed anywhere.
• the measurement processing chamber 400 is attached to a substrate processing apparatus of a type in which a plurality of common transfer chambers are connected as shown in FIG. 6, for example. I can't.
• it may be attached to a substrate processing apparatus of a type having a single common transfer chamber as shown in FIG.
• the common transfer chamber 102 is formed in a polygon of a heptagon or more so that the measurement processing chamber 400 can be mounted in addition to the processing chambers 104A to 104D. It is out.
• the present invention may be applied to a system constituted by a plurality of equipment units, or may be applied to an apparatus that has the power of only one equipment.
• a medium such as a storage medium storing software programs for realizing the various functions of the above embodiments is supplied to the system or apparatus, and the computer (CPU or MPU) of the system or apparatus is supplied.
• the computer CPU or MPU
• the various functions of the above-described embodiments can be realized (achieved).
• Examples of media such as storage media for supplying programs include flexible (floppy) disks, hard disks, optical disks, magneto-optical disks, CD-ROMs, CD-Rs, CD-RWs, DVD-ROMs, You can use DVD-RAM, DVD-RW, DVD + RW, magnetic tape, non-volatile memory card, ROM, or network download!

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