JP2007088401A - 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 - Google Patents

基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 Download PDF

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Publication number
JP2007088401A
JP2007088401A JP2005349556A JP2005349556A JP2007088401A JP 2007088401 A JP2007088401 A JP 2007088401A JP 2005349556 A JP2005349556 A JP 2005349556A JP 2005349556 A JP2005349556 A JP 2005349556A JP 2007088401 A JP2007088401 A JP 2007088401A
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Japan
Prior art keywords
processing
substrate
film
measurement
chamber
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Pending
Application number
JP2005349556A
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English (en)
Japanese (ja)
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JP2007088401A5 (enExample
Inventor
Hidetada Kanamaru
秀忠 金丸
Takebu Herai
武部 戸來
Moyuru Yasuhara
もゆる 安原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005349556A priority Critical patent/JP2007088401A/ja
Priority to PCT/JP2006/316747 priority patent/WO2007023951A1/ja
Publication of JP2007088401A publication Critical patent/JP2007088401A/ja
Publication of JP2007088401A5 publication Critical patent/JP2007088401A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2005349556A 2005-08-25 2005-12-02 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 Pending JP2007088401A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005349556A JP2007088401A (ja) 2005-08-25 2005-12-02 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
PCT/JP2006/316747 WO2007023951A1 (ja) 2005-08-25 2006-08-25 基板処理装置及び基板処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005244797 2005-08-25
JP2005349556A JP2007088401A (ja) 2005-08-25 2005-12-02 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体

Publications (2)

Publication Number Publication Date
JP2007088401A true JP2007088401A (ja) 2007-04-05
JP2007088401A5 JP2007088401A5 (enExample) 2008-12-25

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ID=37771689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005349556A Pending JP2007088401A (ja) 2005-08-25 2005-12-02 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体

Country Status (2)

Country Link
JP (1) JP2007088401A (enExample)
WO (1) WO2007023951A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158774A (ja) * 2007-12-27 2009-07-16 Tokyo Electron Ltd 基板処理方法、基板処理装置及び記憶媒体
JP2020172706A (ja) * 2020-07-03 2020-10-22 デクセリアルズ株式会社 光学膜の製造方法
KR20200124314A (ko) * 2018-03-20 2020-11-02 도쿄엘렉트론가부시키가이샤 계측 통합형 기판 프로세싱 툴 및 그 이용 방법
JP2021144022A (ja) * 2020-03-10 2021-09-24 東京エレクトロン株式会社 膜厚測定装置および膜厚測定方法、ならびに成膜システムおよび成膜方法
CN114446767A (zh) * 2020-11-06 2022-05-06 应用材料公司 增强材料结构的处置
JP2022097945A (ja) * 2020-12-21 2022-07-01 株式会社アルバック 基板処理装置及び基板処理方法
JP2022549489A (ja) * 2019-09-25 2022-11-25 ベネク・オサケユフティオ 半導体基板の表面を処理するための方法及び装置
JP2023018500A (ja) * 2021-07-27 2023-02-08 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
WO2025053542A1 (ko) * 2023-09-04 2025-03-13 한화정밀기계 주식회사 기판 처리 장치 및 방법
KR20250044562A (ko) * 2023-09-22 2025-04-01 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
JP2001338964A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 試料処理装置および処理方法
JP2003098112A (ja) * 2001-09-25 2003-04-03 Hitachi Ltd 薄膜デバイスの表面画像の検出・出力方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
JP2003297822A (ja) * 2002-03-29 2003-10-17 Tokyo Electron Ltd 絶縁膜の形成方法
JP2004071796A (ja) * 2002-08-06 2004-03-04 Hitachi Kokusai Electric Inc 縦型半導体製造装置
JP2004119635A (ja) * 2002-09-25 2004-04-15 Tokyo Electron Ltd 被処理体の搬送方法
JP2004363316A (ja) * 2003-06-04 2004-12-24 Tokyo Electron Ltd プラズマ処理方法
JP2005039185A (ja) * 2003-06-24 2005-02-10 Tokyo Electron Ltd 被処理体処理装置、その被処理体処理方法、圧力制御方法、被処理体搬送方法、及び搬送装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
JP2001338964A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 試料処理装置および処理方法
JP2003098112A (ja) * 2001-09-25 2003-04-03 Hitachi Ltd 薄膜デバイスの表面画像の検出・出力方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
JP2003297822A (ja) * 2002-03-29 2003-10-17 Tokyo Electron Ltd 絶縁膜の形成方法
JP2004071796A (ja) * 2002-08-06 2004-03-04 Hitachi Kokusai Electric Inc 縦型半導体製造装置
JP2004119635A (ja) * 2002-09-25 2004-04-15 Tokyo Electron Ltd 被処理体の搬送方法
JP2004363316A (ja) * 2003-06-04 2004-12-24 Tokyo Electron Ltd プラズマ処理方法
JP2005039185A (ja) * 2003-06-24 2005-02-10 Tokyo Electron Ltd 被処理体処理装置、その被処理体処理方法、圧力制御方法、被処理体搬送方法、及び搬送装置

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101553075B1 (ko) 2007-12-27 2015-09-14 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 기억 매체
JP2009158774A (ja) * 2007-12-27 2009-07-16 Tokyo Electron Ltd 基板処理方法、基板処理装置及び記憶媒体
KR20200124314A (ko) * 2018-03-20 2020-11-02 도쿄엘렉트론가부시키가이샤 계측 통합형 기판 프로세싱 툴 및 그 이용 방법
KR102655137B1 (ko) 2018-03-20 2024-04-04 도쿄엘렉트론가부시키가이샤 계측 통합형 기판 프로세싱 툴 및 그 이용 방법
JP7395721B2 (ja) 2019-09-25 2023-12-11 ベネク・オサケユフティオ 半導体基板の表面を処理するための方法及び装置
US12421596B2 (en) 2019-09-25 2025-09-23 Beneq Oy Method and apparatus for processing surface of a semiconductor substrate
JP2022549489A (ja) * 2019-09-25 2022-11-25 ベネク・オサケユフティオ 半導体基板の表面を処理するための方法及び装置
JP2021144022A (ja) * 2020-03-10 2021-09-24 東京エレクトロン株式会社 膜厚測定装置および膜厚測定方法、ならびに成膜システムおよび成膜方法
JP2020172706A (ja) * 2020-07-03 2020-10-22 デクセリアルズ株式会社 光学膜の製造方法
JP7146853B2 (ja) 2020-07-03 2022-10-04 デクセリアルズ株式会社 光学膜の製造方法
JP7604570B2 (ja) 2020-11-06 2024-12-23 アプライド マテリアルズ インコーポレイテッド 材料構造を改良するための処理
JP7313414B2 (ja) 2020-11-06 2023-07-24 アプライド マテリアルズ インコーポレイテッド 材料構造を改良するための処理
JP2023164786A (ja) * 2020-11-06 2023-11-14 アプライド マテリアルズ インコーポレイテッド 材料構造を改良するための処理
JP2022077990A (ja) * 2020-11-06 2022-05-24 アプライド マテリアルズ インコーポレイテッド 材料構造を改良するための処理
CN114446767A (zh) * 2020-11-06 2022-05-06 应用材料公司 增强材料结构的处置
JP2022097945A (ja) * 2020-12-21 2022-07-01 株式会社アルバック 基板処理装置及び基板処理方法
JP2023018500A (ja) * 2021-07-27 2023-02-08 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
JP7683383B2 (ja) 2021-07-27 2025-05-27 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
WO2025053542A1 (ko) * 2023-09-04 2025-03-13 한화정밀기계 주식회사 기판 처리 장치 및 방법
KR20250044562A (ko) * 2023-09-22 2025-04-01 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102798048B1 (ko) 2023-09-22 2025-04-24 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법

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