WO2007020926A1 - 半導体の表面処理法 - Google Patents
半導体の表面処理法 Download PDFInfo
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- WO2007020926A1 WO2007020926A1 PCT/JP2006/316047 JP2006316047W WO2007020926A1 WO 2007020926 A1 WO2007020926 A1 WO 2007020926A1 JP 2006316047 W JP2006316047 W JP 2006316047W WO 2007020926 A1 WO2007020926 A1 WO 2007020926A1
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- Prior art keywords
- temperature
- jig
- gas
- semiconductor
- wafer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 34
- 239000001257 hydrogen Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 38
- 238000002360 preparation method Methods 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000003507 refrigerant Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 70
- 229910001873 dinitrogen Inorganic materials 0.000 description 20
- 239000007924 injection Substances 0.000 description 18
- 238000002347 injection Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 15
- 239000000112 cooling gas Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002826 coolant Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000004071 soot Substances 0.000 description 6
- 239000012267 brine Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Definitions
- the present invention relates to a semiconductor surface treatment method, and more specifically,
- An example of application of dry etching is a process of embedding an electrode material such as poly-Si, doped poly-Si, metal, TiSi, WSi, or TiN in a process of manufacturing a semiconductor device on a silicon wafer.
- This etching removes the natural acid film formed on the silicon exposed in the hole.
- a pretreatment for selective epitaxial growth for example, when making epitaxial growth of three or more layers, which is carried out when making an ultra-high speed SRAM transistor, as well as general epitaxial growth, natural oxidation of the Si substrate surface is performed. It is also effective as dry etching to remove the film.
- Patent Document 1 WO01 / 73832A1 proposed by the present applicant, a batch-type dry etching method having higher productivity than single wafer processing has been disclosed. The essence is that NF, NH, H, while rotating Si woofers arranged in the vertical direction in a reaction chamber kept at 50 ° C or lower
- Etching reaction gas such as N is introduced into the reaction chamber from the chamber with higher pressure than the reaction chamber.
- the lamp heater for heating radiates heat to the reaction chamber through the quartz window, but the stone window is a fluoride complex.
- the lamp heater is installed on the exhaust side because it causes particles.
- the aluminum on the inner surface of the reaction tank that constitutes the reaction chamber is glossed so that the radiant heat of the inner surface force is reflected by the glossy surface and reaches the reaction chamber uniformly, thereby improving temperature uniformity.
- hydrogen termination is performed by heating in an atmosphere containing hydrogen to bond hydrogen to the free arms (dangling bonds) of the Si atoms.
- (4) Move the Si wafer together with the support jig out of the reaction chamber. (5) Remove Si woofer from supporting jig.
- the reaction chamber used in the surface treatment method of Patent Document 1 is made of an aluminum-based material (page 7, lines 11 to 13).
- Aluminum-based materials are subjected to sealing treatment after anodizing of aluminum to give corrosion resistance to fluorine-based complexes. Since the reaction with the fluorine complex stops at 60 ° C or higher, it is desirable to keep the temperature of the reaction tank above this temperature. However, as the temperature rises, the amount of radiant heat to the wafer increases. It is kept at a moderate temperature. Furthermore, Si, SiO, SiO, SiN, SiON, etc. generated when the complex is decomposed
- the temperature of the wall of the reaction chamber is kept at 30 to 60 ° C so that the reaction between the wall and the deposit does not proceed in the next step.
- Patent Document 2 Japanese Patent Application Laid-Open No. 5-275392, NF, H, etc. are used for etching gas.
- a single-wafer process has been proposed that flows through a pipe equipped with a chromowave generator and hits the wafer in a downstream manner.
- a cooling gas such as nitrogen gas is allowed to flow into the susceptor, so that the wafer temperature is set to 100 ° C. or lower and Si is etched against SiO.
- Patent Document 1 WO01 / 73832A1
- Patent Document 2 JP-A-5-275392
- Patent Document 3 Japanese Patent Laid-Open No. 7-121124
- Non-Patent Document l J. Appl. Phys. 74 (2), 15, July, 1993, Damage-free selective etching of Si n ative oxides using NH3 / NF3 and SF6 / H20 down flow etching, page 1347, Fig. 6 Disclosure of the invention
- Patent Document 1 natural oxide film removal and complex decomposition such as (NH) SiF, hydrogen termi
- the first natural acid film removal etching is performed at 20 to 50 ° C, then the heat treatment for hydrogen termination is performed at 200 ° C, and the wafer is removed from the jig. Send to the process.
- a jig heated to around 100-200 ° C is cooled by natural cooling, a considerable amount of time is required to cool it down to room temperature where the residence time at 100-150 ° C is long.
- the following processing was performed without the jigs, particularly the heavy pillars, being cooled sufficiently. For this reason, the temperature of the wafer for the new batch processing becomes high especially at the contact portion with the jig.
- the woofer's peripheral edge of about 3mm is not considered as a product, but the inside is a product, and the removal of the natural oxide film in contact holes affects the product yield.
- Patent Document 1 the power of cooling the wafer with the vaporized gas of liquid nitrogen before removing the natural acid film in the reaction chamber. 'I'm low.
- an object of the present invention is to provide a method capable of stably obtaining a high etching rate when dry etching of an oxide film formed on a semiconductor silicon wafer is repeatedly performed. To do.
- a semiconductor silicon wafer is placed in a reaction chamber made of an aluminum-based material by a jig with a support method in which most of the surface is exposed.
- the present invention relates to a method of performing natural oxide film removal and hydrogen bonding treatment in a reaction chamber by being placed on a jig.
- the first method of the present invention is characterized in that an inert gas having a temperature in the range of 0 to -30 ° C is injected into the reaction chamber after completion of hydrogen bonding treatment (ie, hydrogen termination). .
- the reaction gas is sent to the reaction chamber through the chamber whose pressure is higher than that of the reaction chamber.
- this method may or may not be adopted.
- the semiconductor silicon wafer is moved together with the jig to a processing preparation chamber provided below, above or on the side of the reaction chamber, and the temperature is in the range of 0 to 30 ° C.
- An inert gas having a temperature is injected into the processing preparation chamber.
- a feature common to the first and second methods of the present invention is that, after hydrogen bonding treatment, an inert gas having a temperature of 0 to 1-30 ° C is used to form a semiconductor silicon wafer (hereinafter referred to as "wafer"). And cooling the jig.
- the inert gas nitrogen which does not react with a semiconductor and is inexpensive is preferable. Nitrogen is effective for cooling in the range of 0 to 1-30 ° C, especially 10 to 20 ° C. If the temperature is lower than 30 ° C, the wafer temperature becomes non-uniform.
- Nitrogen is preferably adjusted to the temperature of the liquid by exchanging heat with a liquid having a temperature of 0 to 30 ° C., for example, brine, ethylene glycol, etc. using a double tube, fins, or the like.
- a liquid having a temperature of 0 to 30 ° C. for example, brine, ethylene glycol, etc. using a double tube, fins, or the like.
- a constant temperature treatment apparatus for producing a constant temperature gas is disclosed in Patent Document 3, Japanese Patent Application Laid-Open No. 7-121248, etc., and a commercially available thermo chiller can be used.
- Thermo-chiller is sold by SMC Co., Ltd., and has been used in the past to maintain the etcher reaction tank at a constant temperature of 20 to + 40 ° C with an accuracy of ⁇ 3 ° C.
- the constant temperature treatment apparatus used in the present invention may use an existing etcher cooling chiller by bypassing a part of the cooling gas. Alternatively, the heat exchange may be
- the reaction chamber after the hydrogen bonding treatment has a pressure range of 100 ° C or higher, usually 0.1 to 10 torr.
- a feature of the second method of the present invention is that the cooling of the woofer or the like is performed in a process step separate from the reaction chamber. By performing in the equipment room, woofers and the like are cooled in the treatment preparation room having a temperature lower than that of the reaction chamber described above to further increase the cooling effect, and the temperature of the woofer is 20 ° C. or less, preferably 5 Cooling to ⁇ 10 ° C can be achieved.
- the wafer In the processing preparation chamber, the wafer is charged, and there are cases of vacuum and normal pressure. However, if there is a pressure difference from the processing preparation chamber, the pressure difference is eliminated and the power wafer is prepared. It is preferable to move to the room.
- cooling can be performed to 20 ° C or less in terms of wafer temperature.
- the jig was considered to be several degrees higher than the wafer, especially in the complicated shape. Therefore, the temperature of the jig is slightly over 20 ° C, and the temperature rise of the new Si wafer can be reduced.
- the reaction rate increases by about 6 times with a temperature drop of about 5 ° C (see Non-Patent Document 1). Therefore, even if the temperature drops at first glance, the natural oxide film removal rate significantly increases.
- the etching rate is increased, so that the throughput is stably increased.
- Patent Document 1 in order to microwave-excite gases such as H, N, NH, etc.,
- An applicator with a 2.45 GHz microwave generator attached to the tube through which the gas passes.
- the microwave output can be reduced according to the method of the present invention, so that the quartz applicator is less damaged and the generation amount of quartz particles and the like is reduced. Because the etching rate is increased, the quartz tube can be made of sapphire or alumina, which is less likely to generate particles.
- FIG. 1 is a plan sectional view showing an embodiment of a surface treatment apparatus according to the first method of the present invention.
- FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
- FIG. 3 is a cross-sectional view taken along the line ⁇ - ⁇ in FIG.
- FIG. 4 is a front view of the reaction gas introduction pipe as seen from the reaction chamber side force.
- FIG. 5 is a plan view showing a holding position by a woofer holding jig.
- FIG. 6 is a partially enlarged view showing the claw of the woofer holding jig.
- FIG. 7 is a view showing the arrangement position of the cooling gas injection nozzle.
- FIG. 8 is a front view of a cooling gas spill.
- FIG. 9 is a plan sectional view showing an embodiment of a surface treatment apparatus for carrying out the second method of the present invention.
- FIG. 10 shows a preferred embodiment of the second method and is a horizontal sectional view of the processing preparation chamber.
- FIG. 11 is a partially enlarged view of the inner cylinder shown in FIG.
- FIG. 12 is a cross-sectional plan view showing one embodiment of a surface treatment apparatus for performing single wafer processing by the method of the present invention.
- FIG. 13 is a drawing of a hanging type jig.
- FIG. 14 is a plan view or a rear view of the gas ejector used in FIGS.
- FIG. 15 is a view of a heat exchange type cooling gas injection device provided with a heat insulating part.
- FIG. 16 is a sectional view taken along line XX in FIG.
- FIG. 17 is a graph showing temperature changes when removing a natural acid film by dry etching, complex decomposition, and subsequent cooling.
- FIG. 1 is a horizontal sectional view of a natural oxide film removing apparatus for performing the first method of the present invention on a plurality of wafers
- FIG. 2 is a sectional view taken along line II-II
- Figure 3 is a cross-sectional view taken along line III-III.
- the cooling gas injection nozzle 15 in FIG. 2 is shown as that in FIG. 16 instead of that in FIG.
- Inlet 3 is equipped with a 2.45 GHz microwave generator 4 whose output is 3000 W in the reaction chamber for 8 inch wafers and 6000 W for 12 inch. In the case of 6000W, two 3000W generators are arranged in parallel. This first gas inlet pipe 3 and NF etc.
- the reaction tank 5 is opened at a notch 5a, and the tip is held by a partition plate 5b (see FIG. 1).
- These gas inflow pipes 1, 2, and 3 are formed into a vertically long box-like shape, and gas injection holes 16, 17, and 18 (see Fig. 4) that are almost equal to the number of wafers are formed at the ends. ing. Therefore, most of the gas ejected from these injection holes 16, 17 and 18 reacts in the reaction chamber 30. A very small part may react at the tip of these injection holes and stick around the injection holes. To avoid this, the gas inflow pipes 1, 2, and 3 can be cooled although the structure is complicated.
- an exhaust pipe 13 for discharging the reaction gas and the unreacted gas to the outside of the furnace is formed at a position symmetrical to the gas inflow pipes 1, 2, and 3.
- the exhaust pipe 13 is provided with a valve and a pump (not shown), and the reaction chamber 30 in which the woofer 10 is arranged is sucked into a vacuum.
- the wafer 10 is arranged by the jig 9 (see FIGS. 2 to 3 and 5) so that the wafer surface 10b faces upward and downward.
- the jig 9 is connected to the rotating shaft 11 (Fig. 2), and moves up and down in the reaction chamber 30, and in the state shown in Fig. 2, the bottom plate 8 and the reaction vessel 5 are firmly connected via the 0 ring 29.
- the rotary shaft 11 rotates through the bearing 31 at, for example, about 5 to 10 rpm. This rotation takes place during cooling, natural acid film removal etching and hydrogen bonding processes.
- the jig 9 is fixed between the top plate 26 and the bottom plate 27, which are slightly larger in diameter than the wafer 10, with three vertical columns 28a, b, c (not shown in FIG. 1), and the vertical columns 28a, b , c has a claw 39 sandwiching wafer 10 (Figs. 5 and 6).
- the reaction chamber 30 is closed on the lower side by the bottom plate 8, and when the rotary shaft 11 rotates via the bearing 31 attached to the bottom plate 8, the ueno 10 also rotates together with the jig 9. Further, the reaction chamber 30 and the processing preparation chamber 21 may be turned upside down. 22 is a reaction vessel in the treatment preparation chamber, and 29 is a 0 ring.
- a hollow channel 37 (Fig. 1) meanders in the vertical axis direction, and the reaction tank 5 is eroded by the isothermal gas flowing inside. Does not occur. ⁇ Maintained at an appropriate temperature. The gas that cools the reaction tank 5 is fed from the heat exchange force that is the same as or different from the constant temperature gas ejected from the spray nozzle 15.
- Reference numeral 12 denotes a lamp heater that performs heating to decompose the complex.
- two units are arranged on both sides of the exhaust pipe 13, and each has a large number of lamps 12a arranged in the vertical direction.
- FIGS. 5 and 6 show an example of a jig for supporting the wafer 10 at several places around it.
- 39 is woo 1 This is a claw that sandwiches the vertical force of 0, and is fixed so as to protrude from the vertical column 28. That is, the entire surface area of the wafer 10 is preferably displayed, preferably not less than 95%, without using the susceptor full wafer support system used in Patent Document 2.
- “expressed” means that etching gas or cooling gas flows between the other wafers or other members facing one wafer, for example, dummy wafers, partition members, and the facing surface of the jig. There is enough space for this, and a gap of 2 mm or more is usually sufficient.
- the first gas excited by the microwave is introduced into the reaction chamber by the gas inflow pipe 3. Further, the inner area of the first gas inlet pipe 3 with respect to the sum of the cross-sectional areas of the first gas injection holes 16 (immediately after the microwave generator 4, that is, at the reaction chamber side) is 0.2 to 0.8. If it is double, preferably 0.3 to 0.7, the thickness of the reaction product complex becomes uniform on the wafer surface. As a result, the etching thickness can be made extremely uniform in the processing of a plurality of sheets.
- the pressure of the first gas and the second gas in the gas inlet pipe is about 0.5 to 20 torr.
- the first gas necessary to remove the natural acid film such as N, H, or soot, is added to 2.45G
- the gas excited by the microwave generator 4 excited by the microwave of Hz is ejected from the gas ejection hole 16 into the reaction chamber 30.
- the second gas inflow pipe 3 is made of quartz that is stable against microwaves at the position where the microwave generator 4 is attached, and is made of aluminum at other positions.
- the lamp after removing the natural oxide film at the position shown in FIG. 2, the lamp is heated at this position.
- the complex is decomposed and sucked out of the furnace.
- Hydrogen gas that is not microwave-excited is introduced from the first gas introduction pipe 3
- the free Si arm (dangling bond) of the exposed Si film is removed and hydrogen bonds are formed.
- Nitrogen gas having a temperature of 0 to 30 ° C is fed to the vicinity of the reaction vessel 5 through the heat-insulated introduction pipe 23 (Fig. 1), and from the injection nozzle 15 (Figs. 1 and 2) to the woofer surface. It is ejected so that it may flow.
- jig columns 28a, b, and c are quite thick, so they don't cool down sufficiently, and the reaction rate decreases in the next process. These jig members are also cooled together with wafer 10.
- the injection nozzle 15 is housed in a recess (FIG. 7) formed in the reaction tank 5 so that interference with the rotating wafer 10 and jig 9 does not occur. Further, when viewed from the front, the tip of the injection nozzle 15 has a vertically long tube body in which injection holes 15a (FIG. 8) substantially equal to the number of wafers are arranged vertically.
- the wafer 10 reaches a considerable temperature after the heat treatment for complex decomposition and dangling bond formation, but cooling of the wafer etc. is possible by injecting cooling nitrogen gas from the injection holes 15a.
- FIG. 9 The structure of FIG. 9 is the same as that of the dry etching apparatus described with reference to FIGS. 1 to 8, except that a gas cooling pipe 42 enters the processing preparation chamber 21. Therefore, the etching and decomposition of the complex are performed as described above, and the wafer 10 having a temperature of 200 to 50 ° C. is lowered into the processing preparation chamber 21 together with the jig 9 and the bottom plate 8 as shown in FIG. Yes.
- the cooling nitrogen gas is jetted from the gas cooling pipe 42 to cool the wafer 10 to 5 to 20 ° C. Note that if the wafer 10 is small, i.e. less than 5 inches, wafer rotation is generally unnecessary. Nitrogen gas does not enter the reaction chamber 30, but if the wafer temperature is high, the warm nitrogen gas enters the reaction chamber and raises the natural oxide film removal reaction temperature. It is preferable to provide an openable / closable shutter (not shown) between the chambers 21 to block the rise of the nitrogen gas.
- the tank 22 defining the preparation chamber 21 can be provided with a cooling means (not shown), for example, by forming a cooling medium circulation path therein, so that the temperature of the inner surface can be maintained at 10 to 25 ° C.
- a cooling means (not shown), for example, by forming a cooling medium circulation path therein, so that the temperature of the inner surface can be maintained at 10 to 25 ° C.
- FIGS. 10 and 11 a preferred embodiment of the process preparation chamber is shown. That is, the cylindrical body 22 of the processing preparation chamber 21 is formed with a notch 54 for exhaust and a notch 55 for advancing and retracting a mechanism for taking in and out the woofer. Further, a cooling medium flow path 53 for flowing the cooling medium from the chiller is formed in the cylinder 52, and the inner surface of the cylinder 52 is cooled to a temperature lower than that of the tank 21 in the preparation chamber.
- the preferred cooling temperature is 10-15 ° C.
- the cylindrical body 52 is attached to the inside of the tank 22, and this also cools the inner surface of the cylindrical body preferably at 0 to 15 ° C. by the cooling medium flow path 53.
- the cooling upper and lower meandering pipes may be brought into close contact with the outside of the cylindrical body 52 for cooling.
- the space between the tank 22 and the cylinder 52 of the cooling chamber 21 is a gap or a structure in which a heat insulating material is sandwiched.
- FIG. 43 is a jig part
- support arm 44 is an L-shaped tip fixed to the tip of the support arm
- 45 is a pin extending upward from 44
- 45 a is a contact portion with a wafer having a sharp tip.
- 46 conceptually shows an ejector for the first gas, the second gas, and the entire cooling gas.
- an ejector dedicated to cooling the jig (not shown) is provided, and the jig 9 is similarly cooled.
- the processing of removing the natural acid film from the wafer 10, complex decomposition heating, hydrogen termination, and cooling are sequentially performed. Thereafter, the woofer 10 is lowered to the treatment preparation chamber 21 and nitrogen gas cooling is performed by injecting heat-exchanged nitrogen gas into the woofer 10 or the like from one gas injection pipe 42.
- FIG. 13 shows a jig for suspending the wafer 10, unlike FIG.
- Fig. 14 is a plan view or bottom view of the gas ejector 46.
- Two tubes 48 and 49 are spirally formed.
- the outlet gas force of one of the pipes is ejected from the first gas
- the second gas is ejected from the outlet hole of the other pipe, and either or both of the pipe forces are blown out of nitrogen (cooling) gas. To do.
- FIG. 15 shows a constant temperature treatment device that is a heat exchanger that exchanges heat with brine of the constant temperature treatment device, that is, a chiller.
- a heat exchanger 32 is provided at the outermost part of the cooling gas inflow pipe 35 and is insulated. It is a heat insulator that is filled with a material or vacuum structure, and is located in the reaction chamber 30 as a whole (Fig. 2). Vacuum insulation is preferred at temperatures below 40 ° C. Heat insulation is preferred at higher temperatures.
- the heat insulating part 32 shields nitrogen gas (indicated by dots) from the heat radiated from the jig 9 after the complex decomposition heat treatment. Since the cooling gas pipe 15 shown in FIG.
- a heat exchanger that eliminates the injection hole 15a and has a triple tube structure and sends nitrogen gas into the reaction vessel through the introduction tube is installed outside the reaction vessel in the vicinity thereof, for example, at an interval of about 100 mm. can do.
- Nitrogen gas is supplied from the cooling gas inflow pipe 35.
- the cooling gas inflow pipe is formed in an annular shape in the indirect cooling section, and has a structure indirect contact with the liquid cooling medium from the inside and the outside.
- the liquid coolant guide pipe 33 exits from the conceptually shown brine tank 40 and is divided into two and half (33a, 33b) into an annular flow path, and then merges into one central flow path (33c). Return to brine tank 40 again.
- the dry etching of the natural acid film can be stably performed at a high speed. Furthermore, the dry etching process can be shortened and the number of particles can be reduced.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US11/990,440 US8097541B2 (en) | 2005-08-15 | 2006-08-15 | Method for surface treating semiconductor |
JP2007531000A JP4712806B2 (ja) | 2005-08-15 | 2006-08-15 | 半導体の表面処理法 |
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JP2005235400 | 2005-08-15 | ||
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US (1) | US8097541B2 (ja) |
JP (1) | JP4712806B2 (ja) |
KR (1) | KR100937753B1 (ja) |
WO (1) | WO2007020926A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080819A (ja) * | 2008-09-29 | 2010-04-08 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
JP2011049507A (ja) * | 2009-08-29 | 2011-03-10 | Tokyo Electron Ltd | ロードロック装置及び処理システム |
CN114885450A (zh) * | 2022-07-11 | 2022-08-09 | 中国飞机强度研究所 | 一种空天飞机测试用的极高温极低温热强度循环试验系统 |
Families Citing this family (2)
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JP6000665B2 (ja) * | 2011-09-26 | 2016-10-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
US20210217670A1 (en) * | 2020-01-15 | 2021-07-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001073832A1 (fr) * | 2000-03-29 | 2001-10-04 | F.T.L. Co., Ltd. | Procede de traitement de surface pour semiconducteur |
JP2003124172A (ja) * | 2001-09-25 | 2003-04-25 | Samsung Electronics Co Ltd | ウェーハの処理方法、ウェーハの処理装置、エッチング方法およびエッチング装置 |
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JPH10326771A (ja) * | 1997-05-23 | 1998-12-08 | Fujitsu Ltd | 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法 |
US6597964B1 (en) * | 2002-05-08 | 2003-07-22 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermocoupled lift pin system for etching chamber |
-
2006
- 2006-08-15 JP JP2007531000A patent/JP4712806B2/ja active Active
- 2006-08-15 WO PCT/JP2006/316047 patent/WO2007020926A1/ja active Application Filing
- 2006-08-15 KR KR1020087005789A patent/KR100937753B1/ko active IP Right Grant
- 2006-08-15 US US11/990,440 patent/US8097541B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001073832A1 (fr) * | 2000-03-29 | 2001-10-04 | F.T.L. Co., Ltd. | Procede de traitement de surface pour semiconducteur |
JP2003124172A (ja) * | 2001-09-25 | 2003-04-25 | Samsung Electronics Co Ltd | ウェーハの処理方法、ウェーハの処理装置、エッチング方法およびエッチング装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080819A (ja) * | 2008-09-29 | 2010-04-08 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
JP2011049507A (ja) * | 2009-08-29 | 2011-03-10 | Tokyo Electron Ltd | ロードロック装置及び処理システム |
CN114885450A (zh) * | 2022-07-11 | 2022-08-09 | 中国飞机强度研究所 | 一种空天飞机测试用的极高温极低温热强度循环试验系统 |
CN114885450B (zh) * | 2022-07-11 | 2022-09-20 | 中国飞机强度研究所 | 一种空天飞机测试用的极高温极低温热强度循环试验系统 |
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US20090117747A1 (en) | 2009-05-07 |
KR100937753B1 (ko) | 2010-01-20 |
US8097541B2 (en) | 2012-01-17 |
KR20080063751A (ko) | 2008-07-07 |
JP4712806B2 (ja) | 2011-06-29 |
JPWO2007020926A1 (ja) | 2009-02-26 |
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