KR100937753B1 - 반도체의 표면 처리법 - Google Patents
반도체의 표면 처리법 Download PDFInfo
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- KR100937753B1 KR100937753B1 KR1020087005789A KR20087005789A KR100937753B1 KR 100937753 B1 KR100937753 B1 KR 100937753B1 KR 1020087005789 A KR1020087005789 A KR 1020087005789A KR 20087005789 A KR20087005789 A KR 20087005789A KR 100937753 B1 KR100937753 B1 KR 100937753B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
번호 | 압력 | 유량 | 배기의 유무 | 온도 강하(℃) |
1 | 대기압 | 175㎥/min | 무 | 5 |
2 | 대기압 | 125㎥/min | 유 | 6 |
3 | 대기압 | 125㎥/min | 유 | 6 |
4 | 7.4×103Pa | 50㎥/min | 무 | 0.5 |
5 | 2.3×104Pa | 50㎥/min | 무 | 0.5 |
6 | 9.8×103Pa | 100㎥/min | 무 | 5.5 |
7 | 6.5×104Pa | 100㎥/min | 무 | 2.3 |
8 | 5.1×104Pa | 85㎥/min | 무 | 2.5 |
Claims (7)
- 반도체 실리콘 웨이퍼를, 표면의 95% 이상이 표출되는 지지 방식으로 지그(jig)에 의해, 내면이 알루미늄계 재료로 이루어지는 반응실 내에 배치하고, 마이크로파 여기(勵起)된 수소 및 질소의 1종 또는 2종을 포함하는 제1 가스와, 탄소 및 산소를 포함하지 않고, 불소를 함유하는 화합물로 이루어지는 제2 가스와의 반응 생성물에 의해, 50℃ 이하의 온도에서 상기 반도체 실리콘 웨이퍼의 표면에 존재하는 자연 산화막을 제거하는 처리를 행하고, 그 후 100℃ 이상의 온도에서 상기 자연 산화막 제거에 의해 표출되는 Si의 댕글링 본드(dangling bond)와 수소를 결합하는 처리를 행하고, 수소 결합 처리 종료 후, 상기 반도체 실리콘 웨이퍼를 상기 지그와 함께 상기 반응실 밖으로 철거하고, 그 후 상기 반도체 실리콘 웨이퍼를 상기 지그로부터 떼어내고, 새로운 반도체 실리콘 웨이퍼를 상기 지그에 배치하여, 상기 반응실 내에서 자연 산화막 제거 및 수소 결합 처리를 행하는 방법에 있어서, 상기 수소 결합 처리 종료 후 0∼-30℃의 범위 내의 온도를 가지는 불활성 가스를 상기 반응실 내의 상기 반도체 실리콘 웨이퍼를 향해 분사함으로써 상기 반도체 실리콘 웨이퍼의 온도를 20℃ 이하보다 더욱 저온으로 온도 강하가 일어나도록 냉각하는 것을 특징으로 하는 반도체의 표면 처리법.
- 제1항에 있어서,상기 불활성 가스가, 액체 냉매와 항온 처리 장치 내에서 열교환되어 상기 0∼-30℃의 범위 내의 온도로 유지되고 있는 것을 특징으로 하는 반도체의 표면 처리법.
- 제1항 또는 제2항에 있어서,상기 반응실의 상기 내면의 온도를, 상기 반응실을 획성하는 반응조 내의 중공유로에 의해 30∼60℃로 보온하는 반도체의 표면 처리법.
- 반도체 실리콘 웨이퍼를, 표면의 95% 이상이 표출되는 지지 방식으로 지그에 의해, 내면이 알루미늄계 재료로 이루어지는 반응실 내에 배치하고, 마이크로파 여기된 수소 및 질소의 1종 또는 2종을 포함하는 제1 가스와, 탄소 및 산소를 포함하지 않고, 불소를 함유하는 화합물로 이루어지는 제2 가스와의 반응 생성물에 의해, 50℃ 이하의 온도에서 상기 반도체 실리콘 웨이퍼의 표면에 존재하는 자연 산화막을 제거하는 처리를 행하고, 그 후 100℃ 이상의 온도에서 상기 자연 산화막 제거에 의해 표출된 Si의 댕글링 본드와 수소를 결합하는 처리를 행하고, 수소 결합 처리 종료 후, 상기 반도체 실리콘 웨이퍼를 상기 지그로부터 떼어내고, 새로운 반도체 실리콘 웨이퍼를 상기 지그에 배치하여, 상기 반응실 내에서 자연 산화막 제거 처리 및 수소 결합 처리를 행하는 방법에 있어서, 상기 반응실의 하방, 상방 또는 측방에 설치된 처리 준비실에, 상기 수소 결합 처리 종료 후에 상기 반도체 실리콘 웨이퍼를 상기 지그와 함께 이동시켜, 0∼-30℃의 범위 내의 온도를 가지는 불활성 가스를 상기 처리 준비실 내의 상기 반도체 실리콘 웨이퍼를 향해 분사함으로써 상기 반도체 실리콘 웨이퍼의 온도를 20℃ 이하보다 더욱 저온으로 온도 강하가 일어나도록 냉각하는 것을 특징으로 하는 반도체의 표면 처리법.
- 제4항에 있어서,상기 처리 준비실의 외측 통체의 내면의 온도를 10∼25℃로 보온하는 것을 특징으로 하는 반도체의 표면 처리법.
- 제4항 또는 제5항에 있어서,상기 처리 준비실보다 내측에 배설된 다른 통체를, 외측 통체보다 저온으로 냉각하는 것을 특징으로 하는 반도체의 표면 처리법.
- 제1항에 기재된 불활성 가스 냉각을 행한 후에 제4항에 기재된 불활성 가스 냉각을 행하는 것을 특징으로 하는 반도체의 표면 처리법.
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JP (1) | JP4712806B2 (ko) |
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JP5185046B2 (ja) * | 2008-09-29 | 2013-04-17 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
JP2011049507A (ja) * | 2009-08-29 | 2011-03-10 | Tokyo Electron Ltd | ロードロック装置及び処理システム |
JP6000665B2 (ja) | 2011-09-26 | 2016-10-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
US12062582B2 (en) * | 2020-01-15 | 2024-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices |
CN114885450B (zh) * | 2022-07-11 | 2022-09-20 | 中国飞机强度研究所 | 一种空天飞机测试用的极高温极低温热强度循环试验系统 |
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WO2001073832A1 (fr) | 2000-03-29 | 2001-10-04 | F.T.L. Co., Ltd. | Procede de traitement de surface pour semiconducteur |
KR20030026475A (ko) * | 2001-09-25 | 2003-04-03 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
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JPH10326771A (ja) * | 1997-05-23 | 1998-12-08 | Fujitsu Ltd | 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法 |
US6597964B1 (en) * | 2002-05-08 | 2003-07-22 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermocoupled lift pin system for etching chamber |
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- 2006-08-15 JP JP2007531000A patent/JP4712806B2/ja active Active
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---|---|---|---|---|
WO2001073832A1 (fr) | 2000-03-29 | 2001-10-04 | F.T.L. Co., Ltd. | Procede de traitement de surface pour semiconducteur |
KR20030026475A (ko) * | 2001-09-25 | 2003-04-03 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
JP2003124172A (ja) * | 2001-09-25 | 2003-04-25 | Samsung Electronics Co Ltd | ウェーハの処理方法、ウェーハの処理装置、エッチング方法およびエッチング装置 |
Also Published As
Publication number | Publication date |
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KR20080063751A (ko) | 2008-07-07 |
JP4712806B2 (ja) | 2011-06-29 |
WO2007020926A1 (ja) | 2007-02-22 |
US8097541B2 (en) | 2012-01-17 |
US20090117747A1 (en) | 2009-05-07 |
JPWO2007020926A1 (ja) | 2009-02-26 |
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