Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/005—Control means for lapping machines or devices
  • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
  • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
  • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B44—DECORATIVE ARTS
  • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
  • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
  • B44C1/22—Removing surface-material, e.g. by engraving, by etching
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09G—POLISHING COMPOSITIONS; SKI WAXES
  • C09G1/00—Polishing compositions
  • C09G1/02—Polishing compositions containing abrasives or grinding agents
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K3/00—Materials not provided for elsewhere
  • C09K3/14—Anti-slip materials; Abrasives
  • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
  • C09K3/1463—Aqueous liquid suspensions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
  • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
  • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Definitions

• the invention relates to improved compositions and methods for polishing sapphire surfaces. More particularly, the invention relates to methods for enhancing the sapphire removal efficiency of abrasive materials such as colloidal silica in a sapphire polishing process by adding a salt compound to the slurry.
• Silica abrasive materials are commonly utilized in chemical mechanical polishing of metals, metal oxides, silicon materials.
• abrasive silica particles are suspended in a liquid medium, such as water, sometimes with the aid of a surfactant as a dispersing agent.
• a surfactant as a dispersing agent.
• Choi et al. Journal of the Electrochemical Society, 151 (3) G185-G189 (2004) have reported that addition of sodium chloride, lithium chloride and potassium chloride to suspensions of silica in a basic aqueous medium can enhance the removal rate of silicon dioxide when added to the suspension at levels in the range of about 0.01 to about 0.1 molar. Choi et al.
• Sapphire is a generic term for alumina (Al 2 O 3 ) single-crystal materials. Sapphire is a particularly useful material for use as windows for infrared and microwave systems, optical transmission windows for ultraviolet to near infrared light, light emitting diodes, ruby lasers, laser diodes, support materials for microelectronic integrated circuit applications and growth of superconducting compounds and gallium nitride, and the like. Sapphire has excellent chemical stability, optical transparency and desirable mechanical properties, such as chip resistance, durability, scratch resistance, radiation resistance, a good match for the coefficient of thermal expansion of gallium arsenide, and flexural strength at elevated temperatures.
• Sapphire wafers are commonly cut along a number of crystallographic axes, such as the C-plane (0001 orientation, also called the 0-degree plane or the basal plane), the A-plane (11-20 orientation, also referred to as 90 degree sapphire) and the R-plane (1-102 orientation, 57.6 degrees from the C-plane).
• R-plane sapphire which is particularly preferred for silicon-on-sapphire materials used in semiconductor, microwave and pressure transducer application, is about 4 times more resistant to polishing than C-plane sapphire, which is typically used in optical systems, infrared detectors, and growth of gallium nitride for light-emitting diode applications.
• polishing and cutting of sapphire wafers is an extremely slow and laborious process. Often, aggressive abrasives, such as diamond must be used to achieve acceptable polishing rates. Such aggressive abrasive materials can impart serious surface damage and contamination to the wafer surface.
• Typical sapphire polishing involves continuously applying a slurry of abrasive to the surface of the sapphire wafer to be polished, and simultaneously polishing the resulting abrasive-coated surface with a rotating polishing pad, which is moved across the surface of the wafer, and which is held against the wafer surface by a constant down-force, typically in the range of about 5 to 20 pounds per square inch (psi).
• the present invention provides an improved composition and method for polishing a sapphire surface.
• the method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material, such as colloidal silica, suspended in an aqueous medium.
• the aqueous medium has a basic pH and includes a dissolved salt compound, as an additive, in an amount sufficient to enhance the sapphire removal rate relative to the rate achievable under the same polishing conditions using the same amount of the same inorganic abrasive material in the absence of the salt compound.
• the salt compound preferably is an alkali metal salt and/or alkaline earth metal salt of a mineral acid, an organic acid, or a combination thereof. »
• Non-limiting examples of preferred salt compounds include alkali metal and alkaline earth metal salts of an acid, such as a mineral acid or an organic acid.
• Sodium chloride is a particularly preferred salt compound.
• a preferred method of polishing a sapphire surface comprises applying a polishing slurry to a surface of a sapphire wafer mounted in a rotating carrier and abrading the sapphire surface with a rotating polishing pad while maintaining at least a portion of the polishing slurry disposed between the polishing surface of the pad and the surface of the sapphire wafer.
• the polishing slurry comprises an abrasive amount of an inorganic abrasive material suspended in an aqueous medium having a pH preferably of at least about 9 and including a sapphire removal rate-enhancing amount of a salt compound dissolved therein.
• the polishing pad has a planar polishing surface that rotates about an axis of rotation perpendicular to the sapphire surface at a selected rotation rate.
• the rotating polishing surface of the pad is pressed against the sapphire surface with a selected level of down-force perpendicular to the sapphire surface.
• the combined action of the rotating polishing pad and polishing slurry removes sapphire from the sapphire surface at a removal rate greater than the sapphire removal rate achievable by abrading the sapphire surface with the same pad, at the same rate of rotation, and the same down-force, utilizing a polishing slurry containing the substantially the same amount of the same inorganic abrasive material, absent the salt compound.
• the polishing slurry is applied to the sapphire surface by continuously supplying the slurry onto the sapphire surface while the rotating polishing pad is urged against the sapphire surface.
• An improved process for polishing a sapphire surface comprises abrading the surface, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material suspended in an aqueous medium having a basic pH, preferably a pH of at least about 9, more preferably about 10 to about 11.
• the aqueous medium includes a dissolved salt compound that enhances the sapphire removal rate relative to the removal rate obtainable by a slurry containing substantially the same concentration of the same abrasive material, but absent the salt compound, when evaluated under substantially the same polishing conditions (e.g., substantially the same temperature, down-pressure, polishing pad, pad rotation rate, carrier rotation rate, and abrasive concentration).
• the salt compound is present in an amount sufficient to enhance the removal rate, preferably by at least about 45 percent relative to the rate obtained using a polishing slurry that does not contain the salt compound.
• the salt compound is present in the slurry in an amount in the range of about 0.1 to about 1.5 percent by weight, more preferably about 0.2 to about 1 percent by weight, based on the weight of the slurry.
• Non-limiting examples of suitable inorganic abrasive materials for use in the methods of the present invention include alumina, colloidal silica, and fumed silica abrasive materials.
• the inorganic abrasive material is a silica material, more preferably colloidal silica.
• the abrasive material preferably has a mean particle size in the range of about 20 to about 200, more preferably 50 to about 150.
• the inorganic abrasive material is suspended in an aqueous medium at a concentration in the range of about 1 to about 50 percent by weight, more preferably about 20 to about 40 percent by weight.
• One or more surfactants such as a cationic surfactant, an anionic surfactant, or a mixture of a nonionic surfactant with either a cationic or anionic surfactant, can be used to maintain the inorganic abrasive material in suspension in the aqueous medium.
• the slurry of inorganic abrasive material is substantially free of surfactants.
• Non-limiting examples of suitable colloidal silica materials useful in the methods of the present invention include the BINDZIL® brand colloidal silica slurries marketed by EKA Chemicals division of Akzo Nobel, such as BINDZIL® CJ2-0 (about 40 weight percent silica, about 110 nm mean particle size), colloidal silica materials marketed by Nalco Chemical Company, such as TXl 1005 (about 30 weight percent by weight silica, about 50 nm mean particle size), and the like.
• the concentration of the colloidal silica can be adjusted to the desired level (e.g., about 20 to about 40 percent solids) by dilution with deionized water, if necessary.
• Preferred salt compounds include alkali metal and alkaline earth metal salts of an acid, such as a mineral acid or an organic acid.
• Preferred mineral acids include hydrochloric acid, hydrobromic acid, hydroiodic acid, sulfuric acid, and nitric acid.
• Preferred organic acids include ascorbic acid, oxalic acid and picolinic acid.
• Preferred alkali metal salts include lithium, sodium, and potassium salts, more preferably sodium and lithium salts.
• Preferred alkaline earth metal salts include calcium and magnesium salts, more preferably calcium salts.
• Other preferred salt compounds are iron salts and aluminum salts.
• Preferred iron and aluminum salts include iron halides (e.g., ferric chloride) and aluminum halides (e.g., aluminum chloride) which when added to a basic aqueous medium such generate iron hydroxides (e.g., ferric hydroxide) and aluminum hydroxides, respectively.
• preferred salt compounds include, without limitation lithium chloride, sodium chloride, sodium bromide, sodium iodide, sodium sulfate, calcium chloride, ferric chloride, and mixtures thereof.
• Sodium chloride is a particularly preferred salt compound.
• the methods of the present invention and provide material removal rates for polishing sapphire surfaces significantly higher than removal rates achievable with conventional abrasive slurries in the absence of the salt compound.
• the methods of the present invention are particularly useful for polishing or planarizing a C-plane or R-plane surface of a sapphire wafer and provide material removal rates for polishing sapphire surfaces significantly higher that removal rates achieved with conventional abrasive slurries in the absence of the salt compound. Removal rates that are at least about 45 percent higher, preferably at least about 60 percent higher, more preferably at least about 70 percent higher than the removal rate, obtainable with a substantially similar slurry, absent the salt compound, are readily achieved under substantially the same polishing conditions.
• the methods of the present invention can be carried out utilizing any abrasive polishing equipment.
• the polishing is accomplished with sapphire wafers mounted in a rotating carrier, using a rotating polishing pad applied to the surface of the wafers at a selected down-force, preferably with a down-force in the range of about 2 to about 20 psi at a pad rotation rate in the range of about 20 to about 150 revolutions per minute (rpm), with the wafers mounted on a carrier rotating at about 20 to about 150 rpm.
• Suitable polishing equipment is commercially available from a variety of sources, such as Logitech Ltd, Glasgow, Scotland, UK and SpeedFam-IPEC Corp., Chandler, AZ, as is well known in the art.
• C-plane sapphire wafers (about 2 inches diameter) were polished for about 10 minutes on a Logitech CDP polisher.
• the wafers were mounted on the carrier, which was rotating at a carrier speed of about 65 rpm.
• a 22.5 inch diameter AlOO polishing pad rotating at a platen speed of about 69 rpm was utilized at an applied down-force of about 11.5 psi.
• the pad was conditioned with about 150 sweeps of deionized water, with 50 sweeps of deionized water between each polishing run.
• a 20 percent by weight slurry of colloidal silica (BINDZIL® CJ2-0, 110 nm mean particle size), adjusted to about pH 10 (i.e., by addition of sodium hydroxide) was applied to the wafers at a slurry feed rate of about 160 milliliters per minute (ml/min).
• a salt compound (calcium chloride or sodium chloride) was added to the silica slurry as a removal-rate-enhancing additive. Without the additive, sapphire removal rates in the range of about 250 to about 400 Angstroms per minute (A/min) were obtained.
• Addition of 0.1 percent by weight of calcium chloride increased the removal rate to about 530 A/min compared to 250 A/min for the control with no added salt compound.
• Addition of about 0.1 percent by weight of sodium chloride to the slurry afforded a sapphire removal rate of about 580 A/min compared to about 390 A/min for the control with no salt.
• R-plane sapphire wafers (about 4 inches diameter) were polished for about 10 minutes on a, IPEC 472 polisher.
• the wafers were mounted on the carrier, which was rotating at a carrier speed of about 57 rpm.
• a 22.5 inch diameter AlOO polishing pad rotating at a platen speed of about 63 rpm was utilized at a down-force of about 16 psi.
• the pad was conditioned with about 150 sweeps of deionized water, with 50 sweeps of deionized water between each polishing run.
• a salt compound sodium chloride
• DEQUEST® 2010 about 60 percent by weight 1 -hydroxy ethylidene-l,l-diphosphonic acid in water, available from Solutia Inc.
• the control removal rate was about 160 A/min, whereas the removal rate in the presence of the salt compound was about 608 A/min.
• Another run utilized a control slurry comprising about 0.5 percent by weight of DEQUEST® 2010 and about 2% hydrogen peroxide, compared to a slurry containing about 1 percent by weight of sodium chloride and 2 percent by weight hydrogen peroxide.
• the control afforded a removal rate of about 170 A/min, whereas addition of the salt compound afforded a removal rate of about 304 A/min.
• C-plane sapphire wafers (about 2 inches diameter) were polished for about 10 minutes on a Logitech CDP polisher.
• the wafers were mounted on the carrier, which was rotating at a carrier speed of about 65 rpm.
• a 22.5 inch diameter AlOO polishing pad rotating at a platen speed of about 69 rpm was utilized at a down-force of about 11.5 psi.
• a 20 percent by weight slurry of colloidal silica (BINDZIL® CJ2-0, 110 nm mean particle size), adjusted to about pH 10 (using sodium hydroxide, except for runs in which potassium chloride was used as an additive, in which case potassium hydroxide was used), was applied to the wafers at a slurry feed rate of about 200 milliliters per minute (ml/min).
• the pad was conditioned with about 150 sweeps of deionized water, with 50 sweeps of deionized water between each polishing run.
• a salt compound (sodium chloride, potassium chloride, sodium bromide, sodium iodide, sodium ascorbate, or sodium sulfate) was added to the silica slurry as a removal- rate-enhancing additive. Without the salt compound additive, sapphire removal rates in the range of about 450 to about 590 A/min were obtained.
• atomic force microscopy of sapphire wafers polished by the methods of the invention using a 40 percent by weight colloidal silica abrasive having a mean particle size of about 110 nm suspended in deionized water adjusted to a pH of about 10 and including about 1 percent by weight sodium chloride dissolved in the deionized water exhibited low surface roughness (i.e., roughness values in the range of about 0.2 to about 0.4 nm, which were just above the noise level of the measurements).
• the observed removal rate enhancements of at least about 45 percent, and often greater than 70 percent, for the methods of the present invention are significantly and surprisingly higher than would be expected due to ionic strength effects, such as those reported by Choi et al.

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• Engineering & Computer Science (AREA)
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• Organic Chemistry (AREA)
• Materials Engineering (AREA)
• Life Sciences & Earth Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
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• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Physics & Mathematics (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)

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• 2006
  • 2006-03-01 US US11/365,155 patent/US20060196849A1/en not_active Abandoned
  • 2006-03-02 KR KR1020077022502A patent/KR20070114800A/ko not_active Withdrawn
  • 2006-03-02 CN CNA2006800070811A patent/CN101511532A/zh active Pending
  • 2006-03-02 JP JP2007558239A patent/JP2008531319A/ja active Pending
  • 2006-03-02 CA CA002599401A patent/CA2599401A1/en not_active Abandoned
  • 2006-03-02 EP EP06784322A patent/EP1868953A4/en not_active Withdrawn
  • 2006-03-02 WO PCT/US2006/007518 patent/WO2006115581A2/en not_active Ceased
  • 2006-03-03 TW TW095107298A patent/TWI287484B/zh not_active IP Right Cessation
• 2007
  • 2007-08-21 IL IL185418A patent/IL185418A0/en unknown

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