WO2006112354A1 - Sonde et méthode pour la fabriquer - Google Patents

Sonde et méthode pour la fabriquer Download PDF

Info

Publication number
WO2006112354A1
WO2006112354A1 PCT/JP2006/307834 JP2006307834W WO2006112354A1 WO 2006112354 A1 WO2006112354 A1 WO 2006112354A1 JP 2006307834 W JP2006307834 W JP 2006307834W WO 2006112354 A1 WO2006112354 A1 WO 2006112354A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact
forming
probe
probe according
beam portion
Prior art date
Application number
PCT/JP2006/307834
Other languages
English (en)
Japanese (ja)
Inventor
Tomohisa Hoshino
Hiroyuki Hashimoto
Muneo Harada
Katsuya Okumura
Original Assignee
Tokyo Electron Limited
Octec Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, Octec Inc. filed Critical Tokyo Electron Limited
Publication of WO2006112354A1 publication Critical patent/WO2006112354A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Definitions

  • the present invention relates to a probe and a method of manufacturing the same, and, for example, to a probe used in performing an electrical property inspection of a semiconductor wafer and a method of manufacturing the same.
  • a probe as described in, for example, Japanese Patent Laid-Open No. 2000-055936, as a contactor, is used to inspect electrical characteristics of IC chips such as memory circuits and logic circuits formed in large numbers on a semiconductor wafer.
  • a card is used. This probe card plays a role of relaying the exchange of the inspection signal between the tester, which is a test device, and the IC chip when it contacts the electrode pad of the wafer at the time of inspection.
  • This probe card has, for example, a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip, and each probe needle and each electrode pad are electrically contacted to generate an IC. It is made to inspect the chip.
  • the probe needle includes a cantilever comprising an apex in contact with the electrode pad and an elastic member.
  • FIGS. 10A to 10H are views showing a manufacturing process of a probe needle
  • FIG. 11 is an external perspective view of a probe needle formed by the manufacturing process of FIGS. 10A to 10H.
  • a conventional probe needle will be described with reference to FIGS. 10A to 1 OH and FIG.
  • a resist film 3 is formed on the surface. After exposing through a photomask (not shown), the resist film 3 is developed to form a square opening groove 4 in the resist film 3. After removing the silicon oxide film 2 in the opening groove 4, anisotropic wet etching is applied to the silicon substrate 1 to form an inverted quadrangular pyramidal groove 5 as shown in FIG. The resist film 3 and the silicon oxide film 2 are removed as shown in FIG.
  • a titanium film 6 to be a seed of plating is formed on the entire surface of the silicon substrate 1.
  • a sacrificial layer 7 shown in FIG. 10F is formed by photolithography except for a portion corresponding to the cantilever 8 and a portion corresponding to the groove 5, as shown in FIG. 10G.
  • the sacrificial layer 7 is removed, and the sacrificial layer 7 is removed as shown in FIG. 10H, for example, at the top of the probe needle.
  • An inverted square frustum 9 and a cantilever 8 are formed.
  • the probe formed in the manufacturing process shown in FIG. 10A to FIG. 10H is in the shape of a rectangular parallelepiped with 8 parts of the punch lever, and has a length of 200 to 500 111 150 ⁇ m, thickness T is 10 to 20 ⁇ m, inverted square frustum 9, the top has a height H of 50 to 100 ⁇ m, and the flat portion of the tip has a width Wt of 10 ⁇ It is about 2 / z m in size.
  • the degree of integration of IC chips has been increased, and the number of electrode pads has increased, and the arrangement pitch of the electrode pads has also become narrower and narrower. For this reason, if the probe needle is not narrowed in width, it contacts the adjacent electrode pad and becomes unresponsive to the pitch of the electrode pad. If the width of the inverted square frustum 9 at the top of the probe needle shown in FIG. 11 is reduced, the height will be reduced.
  • the groove 5 is formed by anisotropic wet etching as shown in FIG. 10C, if the diameter of the groove 5 is reduced, the depth of the groove 5 becomes shallow. If the depth of the groove 5 is increased, the diameter must be increased, the diameter of the top is increased, and the pitch of the electrode pad is narrowed. Can not.
  • the cantilever 8 may contact the electrode pad or another element, or the inverted square frustum 9 may not contact the electrode pad properly. I have problems. Furthermore, if the inverted square frustum 9 is low, the cantilever 8 bends and infects the electrode pad.
  • an object of the present invention is to provide a probe that can reliably contact electrode pads arranged at a narrow pitch by maintaining strength and reducing contacts, and a method of manufacturing the same.
  • the present invention provides a beam portion having a predetermined thickness and having a bent flat shape, and a beam portion And a contact element provided protruding in the extending direction of the tip end beam portion and having a thickness smaller than the thickness of the beam portion to constitute a probe.
  • the contact can securely contact the narrow and pitched electrode pads.
  • the tip of the contact is offset from the center of the cross section of the beam. This makes it possible to reduce the thickness of the contact from the thickness of the beam by a simple manufacturing method.
  • the contact is formed in a plate shape having a substantially uniform thickness, and in another embodiment, the contact has a shape in which the thickness gradually decreases toward the tip. ing. In any of the embodiments, since the tip of the contact can be made thin, contact can be reliably made with the electrode pads arranged at a narrow pitch.
  • the contact is formed with a sharp tip. Sharpening the tip facilitates contacting the electrode pad.
  • the contact has an outer surface that is flush with the outer surface of the beam, and in another embodiment, the contact is formed independently of the beam. , One face of which is in close contact with one face of the beam.
  • the beam extends in the same direction as the contact, and the pillar at one end of which the contact is provided and the other end of the pillar are connected to the other end, and the direction crosses the pillar Including a support extending to the The probe can be attached to the probe card through this support.
  • Another aspect of the present invention is a method of manufacturing a probe, comprising the steps of: forming a beam having an approximately uniform thickness and extending in a bent flat shape; Forming a contact having a thickness smaller than that of the portion and projecting in the direction in which the beam extends
  • the probe can be manufactured by integrally connecting the beam portion and the contactor.
  • both the beam portion may be formed first and the contact may be formed first.
  • the step of forming the contact includes forming an elongated first metal layer having a substantially uniform thickness and a portion of the shape to be the contact at the tip end, and forming the beam portion.
  • the step of forming is a second metal overlapping on the first metal layer except for the tip to be a contact. Including forming a layer.
  • the contact made of the first metal layer and the beam portion made of the second metal layer can be integrally manufactured.
  • the beam portion may be formed first, or the contact may be formed first.
  • the first metal layer is a metal film grown in the thickness direction on the substrate, and in the step of forming the beam, the tip of the metal film to be a contact is a masking material.
  • the step of forming an upper layer metal film on the metal layer, and in another embodiment, the step of forming the contact forms a plate-like contact thinner than the thickness of the beam portion.
  • joining the contact and one end of any surface in the extending direction of the beam includes forming a metal film on one side of the beam portion, and the step of forming the contact includes forming a metal film on one side of the contact, Diffusion bonding of the metal film of the beam portion and the metal film of the contact is included.
  • the step of forming the contact includes grinding the tip of the beam to form the contact so as to have a slope. By polishing, a contact can be formed at the tip of the beam.
  • the step of forming the beam portion includes growing the metal layer with a substantially uniform thickness on the substrate including the portion to be the contact, to form the contact.
  • the process includes etching to form a portion to be a contact while covering the portion to be a beam with a masking material.
  • the tip force of the beam having a predetermined thickness and having a bent planar shape is provided so as to protrude in the direction in which the beam extends, and the thickness is reduced from the thickness of the beam. Since the probe is configured to include the contacts having the [1], the contacts can be made smaller while maintaining the strength, and the contacts can be reliably brought into contact with the electrode pads arranged at a narrow pitch.
  • FIG. 1 is an external perspective view showing a probe of an embodiment of the present invention.
  • FIG. 2 is an external perspective view showing a modified example of the probe shown in FIG.
  • FIG. 3A is a plan view showing a manufacturing process of a probe in an embodiment of the present invention.
  • FIG. 3B is a cross-sectional view taken along line B1-B1 of FIG. 3A.
  • FIG. 3C is a plan view showing a manufacturing process of the probe in one embodiment of the present invention.
  • FIG. 3D is a cross-sectional view taken along line D1-D1 of FIG. 3C.
  • FIG. 3E is a plan view showing a manufacturing process of a probe in an embodiment of the present invention.
  • FIG. 3F is a cross-sectional view taken along line F1-F1 of FIG. 3E.
  • FIG. 3G is a plan view showing a manufacturing process of a probe in an embodiment of the present invention.
  • FIG. 3H is a cross-sectional view taken along line HI-HI in FIG. 3G.
  • FIG. 31 is a plan view showing a manufacturing process of a probe in an embodiment of the present invention.
  • FIG. 3J is a cross-sectional view taken along line 1-J1 of FIG.
  • FIG. 4 is a perspective view showing a groove formed in the manufacturing process shown in FIGS. 3A and 3B.
  • FIG. 5 is an external perspective view of a probe formed in the manufacturing process shown in FIGS. 31 and 3J.
  • FIG. 6A is a plan view showing a manufacturing process of a probe in another embodiment of the present invention.
  • FIG. 6B is a cross-sectional view taken along line B2-B2 of FIG. 6A.
  • FIG. 6C is a plan view showing a manufacturing process of the probe in another embodiment of the present invention.
  • FIG. 6D is a cross-sectional view taken along line D2-D2 of FIG. 6C.
  • FIG. 6E is a plan view showing a manufacturing process of the probe in another embodiment of the present invention.
  • FIG. 6F is a cross-sectional view taken along line F2-F2 of FIG. 6E.
  • FIG. 6G is a view showing a manufacturing process of the probe in another embodiment of the present invention.
  • FIG. 6H is a cross-sectional view taken along line H2-H2 of FIG. 6G.
  • FIG. 61 is a diagram showing a manufacturing process of a probe in another embodiment of the present invention.
  • Fig. 61 is a cross-sectional view taken along line 2-J2 of Fig. 61.
  • FIG. 7A An appearance oblique showing a method of manufacturing a probe in still another embodiment of the present invention.
  • FIG. 7B is an appearance perspective view showing a method of manufacturing a probe in still another embodiment of the present invention.
  • FIG. 8A is an appearance perspective view showing a method for producing a probe in still another embodiment of the present invention.
  • FIG. 8B is an appearance perspective view showing a method of manufacturing a probe in still another embodiment of the present invention.
  • FIG. 9A is an external perspective view showing various modified examples of the probe in still another embodiment of the present invention.
  • FIG. 9B is an appearance perspective view showing various modified examples of the probe in still another embodiment of the present invention.
  • FIG. 10A is a drawing showing a manufacturing process of a conventional probe.
  • FIG. 10B is a view showing a manufacturing process of the conventional probe.
  • FIG. 10C is a view showing a manufacturing process of the conventional probe.
  • FIG. 10D is a view showing a manufacturing process of the conventional probe.
  • FIG. 10E is a drawing showing a manufacturing process of a conventional probe.
  • FIG. 10F is a view showing a manufacturing process of the conventional probe.
  • FIG. 10G A diagram showing a manufacturing process of a conventional probe.
  • FIG. 10H is a view showing a manufacturing process of the conventional probe.
  • FIG. 11 is an external perspective view of a probe formed by the manufacturing process of FIGS. 10A to 10H.
  • FIG. 1 is an external perspective view showing a probe according to an embodiment of the present invention.
  • the probe 10 shown in FIG. 1 extends with a predetermined thickness and is provided so as to project in a direction in which the beam portion 11 having a bent flat shape and the tip force of the beam portion 11 extend.
  • Beam 11 includes a support 12 provided along the surface of a probe substrate (not shown), and a pillar 13 extending in a direction intersecting with support 12 and provided with a contact 14 at one end,
  • the support 12 and the column 13 are formed in an L-shaped planar shape.
  • the tip of the contact 14 is at a position offset from the center force of the cross section of the column 13.
  • Both the support portion 12 and the column portion 13 have a substantially uniform thickness, and are formed in the shape of a rectangular parallelepiped of, for example, about 70 to 80 ⁇ m of nickel or a nickel alloy.
  • the contact 14 is formed in a thin plate having a substantially uniform thickness so that its thickness is reduced as compared to the support 12 and the column 13.
  • the thickness is, for example, about 10 to 20 m of nickel or nickel It is made of alloy and sharpened at the tip.
  • the contacts 14 can be properly electrically contacted to the desired electrode pads that do not contact the adjacent electrode pads while maintaining the strength.
  • the degree of integration of the IC chip can be increased to the extent that the inspection of the electrical characteristics of the semiconductor device is not hindered. It is possible to raise it.
  • FIG. 2 is a perspective view showing a modified example of the probe shown in FIG.
  • the probe 10a shown in FIG. 2 is provided with a pillar 13 so as to extend at a right angle from the middle of the support 15 in the longitudinal direction to form a beam 16 in a T-shaped bent planar shape.
  • a contact 14 is formed at the tip.
  • the strength of the beam 16 can be maintained.
  • FIGS. 3A to 3J, 4 and 5 are views for explaining a method of manufacturing a probe according to an embodiment of the present invention, and in particular, FIG. 3 shows a manufacturing process, and FIG. 3A, FIG. 3C, FIG. 3E, FIG. 3G, FIG. 31 show plan views, and FIG. 3B, FIG. 3D, FIG. 3F, FIG. 3H, FIG. 3J show lines Bl of FIG. 3A, FIG. 3C, FIG. 3E, FIG. -Bl, Dl-Dl, Fl-Fl, HI-HI, Jl-It is a cross section along J1.
  • FIG. 4 is a perspective view showing a groove formed in the process shown in FIGS. 3A and 3B
  • FIG. 5 is an external perspective view of a probe formed in the manufacturing process shown in FIGS. 31 and 3J.
  • a titanium film 2 serving as a seed of plating on the entire surface of the silicon substrate 21.
  • a sacrificial layer 24 is formed by photolithography except for the groove 23 corresponding to the L-shaped planar shape of the probe 10 shown in FIG. The formed grooves 23 and the sacrificial layer 24 are shown in FIG.
  • the groove 23 includes a first groove 26 corresponding to the beam 11 shown in FIG. 1 and a second groove 27 corresponding to the contact 14.
  • nickel or a nickel alloy is plated on the portion corresponding to the support portion 12, the column portion 13 and the contact 14 shown in FIG. To form a plating layer 31 as a first metal layer as shown in FIGS. 3C and 3D.
  • a portion of the groove 23 corresponding to the contact 14 is covered with a resin 25 which is a masking material.
  • a method of covering a portion corresponding to the contact 14 in this manner for example, there is a method of spotting the resin 25 with a spoiler.
  • nickel or a nickel alloy is deposited by plating on the first metal layer 31, and the thickness is thicker than the first metal layer 31 as the upper layer, 2.
  • Form 2 plating layers 32 since the part covered with the resin 25 inhibits the growth of the mesophyll, only the first metal layer 31 is formed in the part corresponding to the contact 14.
  • FIGS. 31 and 3J when the resin 25 is removed and the first and second metal layers 31, 32 are removed from the silicon substrate 21 and the sacrificial layer 24, as shown in FIG.
  • the second plating layer 31, 32 can generate the probe 10 b in which the support 12, the column 13, and the contactor 14 are integrated.
  • the short layer is formed on the long layer in order to form the stack of two layers having different lengths.
  • the long layer is formed on the short layer. You may do so.
  • the metal is stacked by a force or other method in which the support 12, the column 13 and the contactor 14 are formed by the first and second metal layers 31 and 32. You may form.
  • the groove 23 shown in FIG. 4 may be formed in a T-shape in conformity with the entire planar shape of the probe 10a.
  • FIGS. 6A to 6J are views showing a method of manufacturing a probe according to another embodiment of the present invention
  • FIGS. 6A, 6C, 6E, 6G, and 61 show plan views
  • FIGS. Figure 6D, Figure 6F, Figure 6 H, FIG. 6J are cross-sectional views taken along the lines B2-B2, D2-D2, F2-F2, H2-H2, J2-J2 of FIG. 6A, FIG. 6C, FIG. 6E, FIG.
  • a titanium film 22 to be a seed of plating is formed on the entire surface of the silicon substrate 21.
  • a sacrificial layer 24 is formed by photolithography except for the groove 23 corresponding to the L-shaped planar shape of the probe 10 shown in FIG.
  • nickel or a nickel alloy is grown in the thickness direction on the titanium film 22 on the silicon substrate 21 by plating to form a plating layer 34 having a predetermined thickness.
  • FIG. 6E and FIG. 6F masking is performed with the insulating layer 28 which is a masking material except for the portion to be the contact 14 shown in FIG. 1, and wet etching is performed, as shown in FIG.
  • FIG. 6H a cavity 29 is formed above the thin plating layer 35 having a thickness to be the contact 14 and the wet-etched portion is a thick plating layer 36 having a thickness corresponding to the column portion 13 Become.
  • FIGS. 61 and 6J when the plating layer 34 is removed from the silicon substrate 21 and the sacrificial layer 24, the support 12 and the column 13 are integrally laminated by the plating layer 36, and the contactor 14 is formed by the plating layer 35. Can be generated.
  • the material of the plating layers 35 and 36 may be changed in order to stop the etching at the plating layer 35 that should be the contact 14.
  • FIG. 7A and FIG. 7B are perspective views showing a method of manufacturing a probe according to another embodiment of the present invention.
  • the beam having a bent planar shape is used in this embodiment while the support 12, the column 13 and the contact element 14 are integrally formed.
  • the support portion 42 serving as the portion 41 and the pillar portion 43 are integrally formed, and the contactor 44 is formed separately and independently from the beam portion 41, and the contactor 44 is closely attached to the pillar portion 43.
  • the support 42 and the column 43 shown in FIG. It is formed to have a substantially uniform thickness.
  • an Au film 45 as a metal film is formed on the lower surfaces of the support portion 42 and the pillar portion 43.
  • the contactor 44 has a substantially uniform thickness of about 10 to 20 ⁇ m in a pentagonal plate with a pointed tip, for example, as a plating layer such as nickel or nickel alloy. Form separately to have.
  • An Au film 46 is formed on the upper surface of the contactor 44, for example. Then, as shown in FIG.
  • the Au film 46 of the contactor 44 and the Au film 45 of the pillar portion 43 are metal diffusion bonded to bond the contactor 44 to the tip portion of the pillar portion 43 for probe It can generate 10d.
  • the support portion 42 and the column portion 43 and the contactor 44 are formed of nickel or a nickel alloy, but may be formed of another metal material.
  • Au / Sn junction may be used instead of AuZAu junction which is characterized in that the Au film is not easily oxidized.
  • cobalt, molybdenum, manganese or the like may be mixed with nickel to form the support portion 42 and the pillar portion 43 and the contactor 44, and the contactor 44 may be joined to the pillar portion 43.
  • FIG. 8A and FIG. 8B are diagrams showing a method of manufacturing a probe in still another embodiment of the present invention.
  • the probe 10 e is configured such that the contact 54 has an inclined surface 55 which is inclined from the same surface as any of the longitudinally extending surfaces of the column portion 53 to the opposite surface.
  • the support portion 52 to be the beam portion 51 and the pillar portion 53 are integrally formed in a L-shaped planar shape bent as a plating layer with, for example, nickel or a nickel alloy.
  • the front end of the column 53 is polished along the surface indicated by the alternate long and short dash line.
  • a contact 54 having a slope 55 can be formed at the tip of the column 53.
  • the tip of the contact 54 may be sharpened on the inclined surface of the contact 54 by polishing.
  • Figs. 9A and 9B are perspective views showing various modifications of the probe in the embodiment of the present invention.
  • the contactor 64 is formed to have an outer surface which is flush with the outer surface of the beam portion 61.
  • the probe 10f of the example shown in FIG. 9A is provided with a pillar 63 at one end of the support 62 to form a beam 61 in an L-shaped bent planar shape, Of the pillar 63 so that the contact 64 formed so that the tip is sharpened at the same level as the surface on the support 62 side of the pillar 63. It is provided on the other end side of the tip.
  • the probe 10g of the example shown in FIG. 9B is located on one end side of the tip of the pillar 63 so that the contact 64 shown in FIG. 9A is flush with the one end face of the support 62 of the pillar 63. It is provided.
  • the contact 64 By forming the contact 64 to have an outer surface flush with the outer surface of the beam portion 61 in this manner, the contact 64 can be made smaller while maintaining the strength of the contact 64. Reliable contact with electrode pads arranged at pitches.
  • the probe of the present invention can be used for a probe card having a plurality of probe needles corresponding to a plurality of electrode pads formed on an IC chip.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

L'invention concerne une sonde (10) qui est composée d’une section de poutre (11) de forme plane pliée en L avec une section de support (12) et une section de colonne (13), et un contact (14) qui est disposé à une extrémité de la section de colonne (13) pour s’étendre dans la même direction que la direction dans laquelle la section de colonne (13) s’étend. À la fois la section de support (12) et la section de colonne (13) sont, par exemple, constituées de nickel ou d’un alliage de nickel d’une épaisseur pour l’essentiel uniforme d’environ 70 - 80 μm. Le contact (14) a la forme d’une plaque plus fine que la section de poutre (11) et est constitué de nickel ou d’un alliage de nickel d’une épaisseur pour l’essentiel uniforme d’environ 10 - 20 μm. Le contact (14) est mis en forme pour posséder une section d’arête avant aiguisée.
PCT/JP2006/307834 2005-04-18 2006-04-13 Sonde et méthode pour la fabriquer WO2006112354A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-120208 2005-04-18
JP2005120208A JP4954492B2 (ja) 2005-04-18 2005-04-18 プローブおよびその製造方法

Publications (1)

Publication Number Publication Date
WO2006112354A1 true WO2006112354A1 (fr) 2006-10-26

Family

ID=37115077

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/307834 WO2006112354A1 (fr) 2005-04-18 2006-04-13 Sonde et méthode pour la fabriquer

Country Status (3)

Country Link
JP (1) JP4954492B2 (fr)
TW (1) TW200706881A (fr)
WO (1) WO2006112354A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024090359A1 (fr) * 2022-10-28 2024-05-02 株式会社日本マイクロニクス Broche de contact et dispositif de connexion électrique

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920380B1 (ko) 2007-05-30 2009-10-07 (주)엠투엔 프로브 팁의 제조 방법
WO2010038433A1 (fr) * 2008-09-30 2010-04-08 ローム株式会社 Procédé de fabrication d’une carte à pointe, carte à pointe, procédé de fabrication d’un dispositif à semi-conducteurs et procédé de formation d’une sonde
JP2012112652A (ja) * 2009-03-25 2012-06-14 Alps Electric Co Ltd プローブおよびプローブの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271570U (fr) * 1985-10-23 1987-05-07
JP2001021581A (ja) * 1999-07-08 2001-01-26 Micronics Japan Co Ltd プローブ組立体の製造方法
JP2001311746A (ja) * 2000-04-28 2001-11-09 Mitsubishi Materials Corp コンタクトプローブ及びプローブ装置
JP2003227849A (ja) * 2002-02-04 2003-08-15 Micronics Japan Co Ltd プローブ要素及びその製造方法
JP2004186670A (ja) * 1998-12-02 2004-07-02 Formfactor Inc リソグラフィ接触要素
JP2004212148A (ja) * 2002-12-27 2004-07-29 Tokyo Cathode Laboratory Co Ltd プローブカード及びコンタクトプローブの接合固定方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271570U (fr) * 1985-10-23 1987-05-07
JP2004186670A (ja) * 1998-12-02 2004-07-02 Formfactor Inc リソグラフィ接触要素
JP2001021581A (ja) * 1999-07-08 2001-01-26 Micronics Japan Co Ltd プローブ組立体の製造方法
JP2001311746A (ja) * 2000-04-28 2001-11-09 Mitsubishi Materials Corp コンタクトプローブ及びプローブ装置
JP2003227849A (ja) * 2002-02-04 2003-08-15 Micronics Japan Co Ltd プローブ要素及びその製造方法
JP2004212148A (ja) * 2002-12-27 2004-07-29 Tokyo Cathode Laboratory Co Ltd プローブカード及びコンタクトプローブの接合固定方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024090359A1 (fr) * 2022-10-28 2024-05-02 株式会社日本マイクロニクス Broche de contact et dispositif de connexion électrique

Also Published As

Publication number Publication date
JP4954492B2 (ja) 2012-06-13
JP2006300617A (ja) 2006-11-02
TW200706881A (en) 2007-02-16

Similar Documents

Publication Publication Date Title
US7692434B2 (en) Probe and method for fabricating the same
KR100580008B1 (ko) 콘택터, 콘택터의 제조 방법 및 콘택터를 사용한 프로브 카드
CN1762050B (zh) 探头及其制造方法
KR100687027B1 (ko) 프로브와 프로브 카드 구조 및 그 제조 방법
US6651325B2 (en) Method for forming cantilever beam probe card and probe card formed
US7218131B2 (en) Inspection probe, method for preparing the same, and method for inspecting elements
CN101006347A (zh) 叠层针尖悬臂式电连接器
KR101544845B1 (ko) 프로브의 제조방법 및 이 제조방법에 의해 제조된 단일체형 프로브
WO2006112354A1 (fr) Sonde et méthode pour la fabriquer
KR20060058189A (ko) 프로브 구조, 프로브 콘택 기판 및 그 제조 방법
US7316065B2 (en) Method for fabricating a plurality of elastic probes in a row
JP5643477B2 (ja) コンタクトプローブ
KR100980002B1 (ko) 프로브 구조물 및 그 제조방법
JP2010002391A (ja) コンタクトプローブ及びその形成方法
KR100623920B1 (ko) 하이브리드형의 탐침 교체형 프로브카드 및 그 제작 방법
KR100627977B1 (ko) 수직형 프로브 제조방법
JP2009250697A (ja) 半導体集積回路装置の製造方法およびメンブレン型のプローブ・カード
KR102469788B1 (ko) 복합 몰드, 금속 성형물 및 그 제조방법
JP7439338B1 (ja) プローブ、プローブカード、およびプローブの製造方法
JP2001194386A (ja) コンタクトプローブ
JP2009300079A (ja) コンタクトプローブ及びプローブカード
JP2014016371A (ja) コンタクトプローブ
TW202414443A (zh) 金屬產品
JP2001201516A (ja) プローブ要素の製作方法及び装置並びに窪み形成装置
JP2009092532A (ja) プローブの製作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 06731770

Country of ref document: EP

Kind code of ref document: A1