Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B28/00—Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32192—Microwave generated discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32192—Microwave generated discharge
  • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/3065—Plasma etching; Reactive-ion etching
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B6/00—Heating by electric, magnetic or electromagnetic fields
  • H05B6/64—Heating using microwaves
  • H05B6/66—Circuits
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B6/00—Heating by electric, magnetic or electromagnetic fields
  • H05B6/64—Heating using microwaves
  • H05B6/66—Circuits
  • H05B6/68—Circuits for monitoring or control
  • H05B6/686—Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B6/00—Heating by electric, magnetic or electromagnetic fields
  • H05B6/64—Heating using microwaves
  • H05B6/70—Feed lines
  • H05B6/705—Feed lines using microwave tuning

Definitions

• the present invention relates to a plasma processing apparatus for processing an object to be processed such as a semiconductor wafer with plasma generated by microwaves, a microwave generation apparatus, a microwave supply apparatus, and a microwave generation method used therefor.
• various processes such as a film formation process, a modification process, an oxidation diffusion process, and an etching process are performed on an object to be processed such as a semiconductor wafer.
• a thin film having a lower relative dielectric constant to be required for the wiring part due to demands for increasing the operating speed of the device.
• a thin film having a higher relative dielectric constant to be required for the capacitor part. Since these thin films are relatively inferior in heat resistance, plasma processing apparatuses that can perform a predetermined process even at a relatively low temperature tend to be frequently used in order to prevent deterioration of the characteristics of the thin film.
• Such plasma processing apparatuses include a processing apparatus that generates plasma using high-frequency power and a processing apparatus that generates plasma using microwaves.
• a processing apparatus that generates plasma using high-frequency power
• a processing apparatus that generates plasma using microwaves.
• a magnetron equipped with a vacuum tube is conventionally used to generate a high-power microwave of several hundred watts required for plasma processing. Yes.
• a microwave can be generated with good controllability.
• vacuum tubes have been used is because of the power that almost does not exist in semiconductor devices capable of high output as described above in the microwave band of several GHz.
• a magnetron equipped with a vacuum tube has a complicated structure and a high device cost. Therefore, with the aim of reducing the equipment cost, a microwave generator was proposed that can generate high-power microwaves while being composed mainly of semiconductor elements without using a vacuum tube (see JP 2004-128141). ).
• FIG. Figure 7 It is a schematic block block diagram which shows the said microwave generator used for a processor.
• a sine wave (sine wave) in the microwave band of several GHz is generated by the sine wave oscillator 2.
• This sine wave is passed through a variable gain attenuator 4 and then amplified by a class A or class AB amplifier 6.
• the AZAB class amplifier 6 is supplied with a constant voltage from the power supply 8 as a drive voltage!
• the signal amplified by the AZAB class amplifier 6 is distributed to a plurality of signals by the distributor 10, and each distributed signal is further amplified in parallel by the AZA class B semiconductor amplifying element 12.
• the signals amplified by the AZAB class semiconductor amplifying elements 12 are synthesized by a synthesizer 14. Then, the microwave generated by this synthesis is propagated in the waveguide 16, passes through the matching circuit 18 on the way, and reaches the antenna member 20 provided in the plasma processing container. Microwaves are radiated from the antenna unit 20 into the processing container, and plasma is generated in the processing container, and the semiconductor wafer is plasma-processed by the plasma.
• the microwave power output from the synthesizer 14 is detected by the detector 22, and the control unit 24 adjusts the amplification factor of the attenuator 4 based on the detection result.
• a microwave having a desired power is supplied to the processing container.
• the semiconductor amplifying element 12 performs the class A or class AB amplifying operation is that the semiconductor amplifying element 12 is operated up to the upper limit of the operating frequency.
• the reason why the plurality of semiconductor amplifying elements 12 are used is that there is currently no high-power and high-speed power device that performs power amplification at frequencies in the microwave band. Summary of the Invention
• the operating efficiency may be about 25 to 50%.
• the amount of heat generation was also increased correspondingly.
• An object of the present invention is to provide a microwave generation apparatus and a microwave generation method that can reduce the size of an apparatus that has high operating efficiency, is low in cost, and does not require balance adjustment.
• the present invention is based on the switch signal generating unit that generates a square-wave switch signal having a fundamental frequency in the microwave band, and the switch signal!
• a switching power amplification unit that performs switching power amplification and outputs an amplified signal
• a variable voltage supply unit that can variably supply a driving voltage for amplification to the switching power amplification unit, and the amplification signal
• a microwave selector for extracting a sine wave signal having the same frequency as the fundamental frequency of the switch signal and outputting it as a microwave
• an output signal detector for detecting the microwave
• the output signal detection And a drive voltage control unit that controls the variable voltage supply unit based on a detection result of the unit.
• the switching power amplification unit performs the switching power amplification based on the square-wave-like switch signal having the fundamental frequency in the microwave band, and the drive voltage is preferably variable during this amplification operation. Can be controlled.
• the obtained amplification signal force can be extracted as a desired microwave by extracting a sine wave signal having the same frequency as the fundamental frequency of the switch signal in the microwave selection unit. Therefore, the operation efficiency is high compared to the conventional class A or class AB amplification operation.
• the device itself can be miniaturized, the cost is low, and no balance adjustment is required.
• the present invention provides a switch signal generation unit that generates a square-wave switch signal having a fundamental frequency in a microwave band, and outputs a amplified signal by performing switching power amplification based on the switch signal!
• a microwave selection unit for extracting a signal and outputting it as a microwave, a light detection unit for detecting light emission of plasma generated by the microwave, and a detection result V based on the detection result of the light detection unit.
• a drive voltage control unit that controls the variable voltage supply unit.
• a square wave switch signal having a fundamental frequency in the microwave band is also according to the present invention.
• the switching power amplification unit performs the switching power amplification, and the drive voltage can be suitably variably controlled during this amplification operation.
• the obtained amplification signal power can be extracted as a desired microwave by extracting a sine wave signal having the same frequency as the fundamental frequency of the switch signal in the microwave selection unit. Therefore, the operation efficiency is high compared to the conventional class A or class AB amplification operation.
• the microwave selection unit includes a band-pass filter or a resonator having a high Q value.
• the bandpass filter is preferably made of one selected from the group consisting of a surface acoustic wave filter, a tubular filter, a wave guide filter, a ramped element filter, and a cavity filter.
• the present invention provides a switch signal generation unit that generates a square-wave-like switch signal having a fundamental frequency in a microwave band, and outputs an amplified signal by performing switching power amplification based on the switch signal!
• a drive voltage control unit that controls the variable voltage supply unit based on a detection result of the light detection unit.
• the switching power amplification unit performs the switching power amplification based on the square wave-like switch signal having the fundamental frequency in the microwave band.
• the drive voltage can be suitably changed during the amplification operation. Can be controlled.
• the obtained amplification signal can be output as a desired microwave. Therefore, the operation efficiency is high compared to the conventional class A or class AB amplification operation.
• the switching power amplifying unit includes, for example, HEMT and Z or HBT.
• the fundamental frequency is preferably 2.45 GHz.
• the present invention provides a microwave generator having any one of the above characteristics, a matching circuit connected to the microwave generator via a transmission line, and the matching circuit And an antenna unit that radiates microwaves connected via a transmission line to the microwave supply device.
• the antenna unit is set to have a high Q value with respect to the microwave supplied to the microwave generator.
• the present invention provides a processing container that can be evacuated, a mounting table provided in the processing container for mounting an object to be processed, and supplying a predetermined gas into the processing container Gas supply means for performing the above, microwave supply apparatus having the above-described characteristics for generating plasma by introducing microwaves into the processing container, and apparatus control means for controlling the microwave supply apparatus.
• a plasma processing apparatus is provided.
• the present invention provides a switching power amplification of a square wave-like switch signal having a fundamental frequency in the microwave band by an amplification drive voltage to form an amplified signal, and the amplified signal power.
• the fundamental frequency of the switch signal In the microwave generation method of extracting a sine wave signal having the same frequency as that of the output signal and outputting it as a microphone mouth wave, the step of detecting the microwave and the switching power amplification based on the detection value are performed. And a step of variably controlling the drive voltage for amplification.
• FIG. 1 is a schematic configuration diagram showing an embodiment of a plasma processing apparatus using a microwave generator according to the present invention.
• FIG. 2 is a block configuration diagram showing a first embodiment of a microwave generation device (and a microwave supply device) according to the present invention.
• FIG. 3 is a circuit principle diagram showing a main part of the microwave generator of FIG.
• FIG. 4 is a circuit configuration diagram showing an example of a class D amplifier.
• FIG. 5 is a block configuration diagram showing a second embodiment of the microwave generator according to the present invention.
• FIG. 6 is a block configuration diagram showing a third embodiment of the microwave generator according to the present invention.
• FIG. 7 is a schematic block diagram showing a conventional microwave generator used in a plasma processing apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
• FIG. 1 is a schematic configuration diagram showing an embodiment of a plasma processing apparatus using a microwave generator according to the present invention.
• FIG. 2 is a block diagram showing a first embodiment of a microwave generator (and a microwave supply device) according to the present invention.
• FIG. 3 is a circuit principle diagram showing a main part (one example) of the microphone mouth wave generator of FIG.
• the plasma processing apparatus 30 includes an apparatus body 32 that actually performs plasma processing, and a microwave supply apparatus 34 that supplies microwaves into the apparatus body 32. It is mainly composed.
• the microwave supply device 34 includes an antenna connected to the microwave generation device 36 via a microwave generation device 36 and a coaxial waveguide 38 serving as a transmission path.
• the part 40 and the matching circuit 42 interposed in the middle of the coaxial waveguide 38 are mainly configured.
• a mode converter 43 for converting a microwave vibration mode is interposed in the coaxial waveguide 38 between the matching circuit 42 and the antenna unit 40.
• the apparatus main body 32 will be described with reference to FIG.
• the apparatus main body 32 has a cylindrical processing container 44 made of, for example, a corrosion-resistant aluminum.
• a mounting table 46 standing from the bottom of the container is provided.
• the semiconductor wafer W which is the object to be processed, is mounted and held.
• the mounting table 46 may be provided with an electrostatic chuck and Z or heater (not shown) as required.
• an exhaust port 48 is provided at the bottom of the processing container 44.
• the exhaust port 48 is connected to a vacuum exhaust system 50 in which a pressure control valve and a vacuum pump (not shown) are interposed. As a result, the inside of the processing container 44 is evacuated and maintained at a predetermined pressure.
• a gate valve 52 that is opened and closed when the wafer W is loaded and unloaded is provided on the side wall of the processing container 44. Further, an observation window 54 made of, for example, transparent quartz glass is attached to the side wall of the processing container 44 via a seal member 56 for monitoring the condition inside the container.
• a gas supply means 58 for introducing a necessary processing gas into the processing container is provided on the upper part of the side wall of the processing container 44. As a result, the necessary processing gas can be introduced into the processing container 44.
• the gas supply means 58 a force provided with one gas nozzle 58B, a plurality of nozzles may be provided as required, or a shower head structure may be employed.
• an opening is provided in the ceiling of the processing container 44, and a ceiling plate 60 made of, for example, quartz glass that is transparent (transmittable) to the microphone mouth wave is provided in the opening. It is airtightly attached via a seal member 62.
• a disc-shaped antenna unit 40 made of, for example, a copper plate is provided on the upper surface side of the ceiling plate 60.
• the antenna unit 40 is provided with a number of elongated slot-like slots 40A. As will be described later, microwaves are radiated downward from these slots 40A!
• a slow wave material 64 made of O 2 or the like is provided with a predetermined thickness. And microwave supply equipment
• the inner cable 38A of the coaxial waveguide 38 of the device 34 is connected to the center of the antenna portion 40, and the outer tube 38B of the coaxial waveguide 38 is connected to the container side wall and grounded.
• apparatus control means 66 including, for example, a microcomputer including the microwave supply apparatus 34.
• microwave generator 36 will be described with reference to FIGS. 2 and 3.
• the microwave generator 36 has a switch signal generator 68 for generating a square-wave switch signal S1, and a switching power amplification of the switch signal S1 with an amplification drive voltage to output an amplified signal S2.
• a switching power amplifier 70 a variable voltage supply unit 71 that variably supplies a driving voltage to the switching power amplification unit 70, and a basis of the switching signal S1 from the amplification signal S2 output from the switching power amplification unit 70
• a microwave selection unit 72 for extracting a sine wave signal S3 having the same frequency as the frequency and outputting it as a microwave, an output signal detection unit 74 for detecting the output of the microwave selection unit 72, and this output signal detection unit 74
• Drive voltage control composed of, for example, a microcomputer or the like that controls the variable voltage supply unit 71 based on the detection result, that is, the feedback signal Part 76 And is mainly composed of.
• the switch signal generator 68 outputs the square-wave switch signal S1 as described above.
• the switch signal S1 has a fundamental frequency in the microwave band (about 1 to 300 GHz), for example, a fundamental frequency of 2.45 GHz.
• the switching power amplifying unit 70 is a power that amplifies the switching power of the switch signal S1.
• the amplification driving voltage supplied from the variable voltage supply unit 71 is variable, so that it is output.
• the pulse height of the square-wave amplified signal S 2 can be varied.
• a class E amplifier is used as the switching power amplification unit 70.
• the switching power amplifying unit 70 composed of a class E amplifier has, for example, a GaAs-HEMT (High Electron Mobility Transistor) 73 that operates as a switch, and a switch signal SI is supplied to its gate G.
• the drive voltage from the variable voltage supply unit 71 is variably applied to the drain D via the choke coil 78, and the source S is grounded.
• a square wave amplified signal S2 in which the height of the square wave is amplified is output.
• GaAs-HEMT GaN-HEMT ⁇ SiGe-HBT (Hetero-junction Bipolar Transistor), InP-HBT, GaAs-HBT, etc. are also suitable as semiconductor elements used in the switching power amplifier 70. It is.
• the operating condition of the switching power amplifier 70 is that the GaAs-HEMT is turned on when the drain voltage is zero, and when Z or the slope of the drain voltage is zero. At this time, the switching loss is minimized and high-efficiency operation can be realized.
• the principle configuration of the microwave selection unit 72 is a first arrangement arranged in parallel with the GaAs-HEMT interposed between the connection point of the choke coil 78 and the drain D and the ground point. It is composed of a series resonant circuit consisting of one capacitor C1, the second connecting point C2 and the first coil L1 connected in series.
• a resonator having a high Q or a bandpass filter having a high Q can be used.
• These bandpass filters include tubular filters, waveguide filters, ramped element filters, cavity filters, (SPECTRUM FSY MICROWAVE INC Product name), surface elastic filters, etc. Can be used.
• the sine wave signal S3 having the same frequency as the fundamental frequency of the switch signal S1 is generated by the resonance wave or the filter action of the microwave selecting unit 72 configured as described above. Is output as. That is, here, higher-order high-frequency sine signals other than the fundamental wave are cut. Then, it propagates to the antenna unit 40 side through the microwave force coaxial waveguide 38 obtained here.
• microwave selection unit 72 of the present embodiment is configured by a coil and a capacitor, but may be configured by a solid circuit.
• the magnitude of the microwave output is detected by the output signal detector 74. Based on this detected value, the drive voltage control unit 76 controls the variable voltage supply unit 71, and if necessary, controls the magnitude of the drive voltage supplied to the switching power amplification unit 70.
• the microwave generated by the microwave generator 36 is supplied to the flat plate antenna unit 40 provided on the ceiling of the processing vessel 44 via the coaxial waveguide 38. .
• the microwave is introduced from the antenna unit 40 into the processing container 44.
• a predetermined processing gas is supplied into the processing container 44 and maintained in a predetermined vacuum state, and the processing gas is turned into plasma by the microwave.
• a predetermined plasma process is performed on the wafer W on the mounting table 46.
• impedance matching is performed by the operation of the matching circuit 42 so that the reflected wave from the antenna unit 40 becomes zero.
• any processing using plasma such as plasma film forming processing, plasma etching processing, plasma ashing processing, plasma mating processing, and the like can be applied.
• the switch signal generator 68 outputs a square-wave switch signal S1 having a fundamental frequency in the microwave band of 2.45 GHz, for example.
• This switching signal S1 is amplified in switching power by a switching power amplifying unit 70 composed of, for example, a class E amplifier, and becomes a square wave amplified signal S2.
• the driving voltage for amplification at this time is variably supplied from the variable voltage supply unit 71.
• Microwave selection from amplified signal S2 above The sine wave signal S3 having the same frequency as the fundamental frequency of the switch signal SI is output as a microwave by the resonance action or filter action of the section 72.
• the square-wave amplified signal S2 can be represented by harmonics including a fundamental wave that can be expanded by a Fourier series. Therefore, by cutting the harmonics other than the fundamental by the microwave selection unit 72, the sine wave signal S3 can be extracted as described above.
• the microwave consisting of the sine wave signal S3 is propagated to the antenna unit 40 side through the coaxial waveguide 38 as described above.
• the output level of the sine wave signal S3 is detected by the output signal detection unit 74 that performs feedback control.
• the drive voltage control unit 76 controls the variable voltage supply unit 71 to control the magnitude of the drive voltage supplied to the switching power amplification unit 70.
• the power of the microwave supplied to the antenna unit 40 side can always be kept constant.
• about 1 second is required to perform the feedback control.
• the semiconductor wafer and W are subjected to plasma treatment, at least, for example, several seconds are required for each wafer, so that the above feedback control is sufficiently effective.
• the driving voltage is variably controlled while using, for example, a class E amplifier as the switching power amplifying unit 70 made of a semiconductor integrated circuit, a high-power microwave is used.
• the structure of the microwave generator 36 capable of output can be simplified, the apparatus cost is not required, and the operating efficiency can be greatly improved.
• the output of one microwave generator 36 is not enough for the total power required for the plasma processing equipment! In case of rolling, a plurality of microwave generators 36 may be provided in parallel. Even in this case, the number thereof can be greatly reduced as compared with the conventional semiconductor amplifying element 12.
• the switching power amplifying unit 70 is not limited to the force using a class E amplifier as shown in FIG. 3, and for example, a class D amplifier is used as shown in FIG. May be used.
• a class D amplifier instead of the choke coil 78 shown in FIG. 3, the second GaAs—HEMT80 is used as a switch element, and the previous GaAs—HEMT73 and this second Ga are used.
• the first capacitor C1 (see FIG. 3) of the microwave selection unit 72 may not be provided.
• a combination of HEMT and HBT or a combination of HBTs may be adopted.
• FIG. 5 is a block configuration diagram showing a second embodiment of a microwave generation apparatus adopting such a configuration. Note that the same components as those shown in FIG. 2 are denoted by the same reference numerals and description thereof is omitted.
• a photodetector 82 that detects light emission of plasma generated in the processing container 44 is provided. ing.
• the photodetector 82 generates a feedback signal.
• an emission spectroscope is used, and light having a specific wavelength whose emission intensity varies depending on the intensity of plasma can be detected. As a result, the power of the supplied microwave can be indirectly detected.
• Such a photodetector 82 is preferably provided outside the observation window 54 (see FIG. 1), for example.
• FIG. 6 is a block configuration diagram showing a third embodiment of a microwave generator employing such a configuration. Components identical to those shown in FIGS. 2 and 5 are given the same reference numerals, and descriptions thereof are omitted.
• the installation of the microwave selection unit 72 (see FIG. 5) is omitted, and the square wave amplification that is the output from the switching power amplification unit 70 in the previous stage is omitted.
• Signal S2 is propagated to antenna unit 40 via matching circuit 42 and mode converter 43. It is supposed to be.
• the antenna unit 40 is designed in advance to have a high Q value, and a microwave having the same frequency as the fundamental frequency of the switch signal S1 is supplied from the antenna unit 40 into the processing container 44. That is, by designing the antenna unit 40 to have a high Q value with respect to the basic frequency of the switch signal S1, the antenna unit 40 itself has the function of the microwave selection unit 72. In this case, as a design guideline, it is preferable to lower the impedance of the antenna portion with respect to the microwave. According to the present embodiment, since the installation of the microwave selection unit 72 can be omitted, the apparatus cost can be reduced by IJ.
• a semiconductor wafer is used as the object to be processed.
• the object to be processed is not limited to a semiconductor wafer, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.
• microwave generation apparatus and the microwave supply apparatus can be applied not only to a plasma processing apparatus (semiconductor manufacturing apparatus) but also to other apparatuses such as a microwave oven.

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• 2005
  • 2005-04-04 JP JP2005107953A patent/JP2006287817A/ja active Pending
• 2006
  • 2006-03-31 CN CNA2006800112744A patent/CN101156314A/zh active Pending
  • 2006-03-31 WO PCT/JP2006/306895 patent/WO2006106945A1/ja not_active Ceased
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