WO2022163461A1 - プラズマ処理装置、高周波電力給電回路、およびインピーダンス整合方法 - Google Patents
プラズマ処理装置、高周波電力給電回路、およびインピーダンス整合方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/40—Impedance converters
- H03H11/44—Negative impedance converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- the present disclosure relates to a plasma processing apparatus, a high frequency power supply circuit, and an impedance matching method.
- a plasma processing apparatus supplies high-frequency power to a plasma processing unit having a chamber in which a substrate to be processed is accommodated, generates plasma in the chamber, and performs plasma processing such as etching processing and film forming processing using the plasma.
- the present disclosure provides a technology that can match the impedance on the high frequency power supply side and the impedance on the plasma load side over a wide frequency band.
- a plasma processing apparatus is a plasma processing apparatus that performs plasma processing on a substrate, and includes a processing container in which the substrate is accommodated, and high-frequency power for generating plasma in the processing container.
- a high-frequency power supply for applying high-frequency power to the electrode; and a high-frequency power supply circuit for supplying high-frequency power from the high-frequency power supply to the electrode, wherein the high-frequency power supply circuit receives the high-frequency power from the high-frequency power supply.
- a negative impedance section connected to the power supply line for realizing a negative impedance corresponding to the impedance on the plasma side, wherein the impedance on the high-frequency power supply side and the plasma side that is the load are connected to the electrode. and a matching device for matching the impedance.
- a technology is provided that can match the impedance of the high-frequency power supply side and the impedance of the plasma load in a wide frequency band.
- FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to a first embodiment
- FIG. FIG. 4 is a configuration diagram showing a specific example in which a negative impedance conversion circuit is used as a negative impedance section and a step-up transformer is used as an amplifier in the plasma processing apparatus according to the first embodiment
- 1 is a circuit diagram showing an example of a conventional matching box
- FIG. FIG. 10 is a diagram for explaining impedance matching when a conventional matching box is used
- FIG. 2 is a diagram showing an apparatus configuration when plasma is generated by applying high-frequency power of a plurality of frequencies using a conventional matching technique
- FIG. 4 is a diagram for explaining impedance matching when using the matching box of the first embodiment
- FIG. 3 is a diagram showing a case where high-frequency power of a plurality of frequencies is supplied from high-frequency power sources of a plurality of frequencies using the high-frequency power feeding circuit of the first embodiment; It is a cross-sectional view schematically showing a plasma processing apparatus according to a second embodiment. It is a cross-sectional view schematically showing a plasma processing apparatus according to a third embodiment.
- FIG. 11 is a configuration diagram showing a specific example using a negative impedance conversion circuit as a negative impedance section in the plasma processing apparatus according to the third embodiment; It is a figure which shows the structural example of the operational amplifier used for a negative impedance conversion circuit.
- FIG. 11 is a configuration diagram showing a specific example using a negative impedance conversion circuit as a negative impedance section in the plasma processing apparatus according to the third embodiment. It is a figure which shows the structural example of the operational amplifier used for a negative impedance conversion circuit.
- FIG. 3 is a diagram showing a specific circuit example of an operational amplifier used in a negative impedance conversion circuit; It is a figure which shows the modification of the negative impedance conversion circuit used as a negative impedance part of the plasma processing apparatus which concerns on 3rd Embodiment. It is a sectional view showing roughly the important section of the plasma treatment apparatus concerning a 4th embodiment.
- FIG. 15 is a diagram showing a modification of the high-frequency power supply circuit in the plasma processing apparatus of FIG. 14; It is a sectional view showing roughly the important section of the plasma treatment apparatus concerning a 5th embodiment. It is a sectional view showing roughly the important section of the plasma treatment apparatus concerning a 6th embodiment. It is a sectional view showing roughly the important section of the plasma treatment apparatus concerning a 7th embodiment. It is a figure which shows the voltage waveform at the time of two-frequency superimposition of 10 MHz and 5 MHz.
- FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to the first embodiment.
- the plasma processing apparatus 100 performs plasma processing on the substrate W, and is configured as a capacitively coupled plasma processing apparatus.
- the substrate W include, but are not limited to, a semiconductor wafer.
- the plasma processing apparatus 100 has a substantially cylindrical metal processing container (chamber) 1 .
- the processing container 1 is grounded.
- a substrate mounting table 2 for horizontally mounting a substrate W is provided inside the processing container 1 .
- the substrate mounting table 2 includes a grounded lower electrode.
- the substrate mounting table 2 is made of metal, functions as a lower electrode, and is grounded.
- the substrate mounting table 2 may be made of an insulator. In that case, the substrate mounting table 2 may have a metal grounded lower electrode embedded therein.
- the bottom electrode can be grounded through an impedance adjustment circuit that can have a variable capacitor and/or inductor.
- the substrate mounting table 2 may be provided with a heating mechanism or a cooling mechanism depending on the plasma processing.
- a plurality of elevating pins (not shown) are inserted into the substrate mounting table 2 so as to protrude from the upper surface thereof.
- the substrate W is transferred to and received from the table 2 .
- the showerhead 10 is made of metal, has a cylindrical overall shape, and includes an upper electrode. In the illustrated example, the showerhead 10 itself functions as the upper electrode, but part of the showerhead 10 may also serve as the upper electrode.
- the shower head 10 has a body portion 11 having an opening at the bottom, and a shower plate 12 provided so as to block the opening of the body portion 11, and the internal space therebetween functions as a gas diffusion space. A plurality of gas ejection holes 13 are formed in the shower plate 12 .
- a gas introduction hole 14 is formed in the shower head 10 , and a processing gas for plasma processing supplied from the gas supply unit 20 is introduced into the shower head 10 through the gas introduction hole 14 . Then, the processing gas introduced into the shower head 10 is discharged into the processing container 1 from the gas discharge holes 13, and the processing gas is discharged into the space between the shower head 10 as the upper electrode and the substrate mounting table 2 as the lower electrode. is supplied.
- the gas supply unit 20 is configured to supply a plurality of gases required for plasma processing, such as a processing gas, a plasma generation gas, and a purge gas.
- gases required for plasma processing such as a processing gas, a plasma generation gas, and a purge gas.
- a suitable processing gas is selected according to the plasma processing to be performed.
- the gas supply unit 20 has a plurality of gas supply sources and gas supply pipes, and the gas supply pipes are provided with valves and flow rate controllers such as mass flow controllers.
- An exhaust port 51 is provided on the bottom wall of the processing container 1 , and an exhaust device 53 is connected to the exhaust port 51 via an exhaust pipe 52 .
- the evacuation device 53 has an automatic pressure control valve and a vacuum pump, and can evacuate the inside of the processing container 1 by the evacuation device 53 and maintain the inside of the processing container 1 at a desired degree of vacuum.
- the side wall of the processing chamber 1 is provided with a loading/unloading port for loading/unloading the substrate W to/from the processing chamber 1.
- the loading/unloading port is configured to be opened and closed by a gate valve.
- a high-frequency power supply 30 is connected via a high-frequency power supply circuit 40 to approximately the center of the showerhead 10, which is the upper electrode. High-frequency power is supplied from the high-frequency power supply 30 to the showerhead 10, which is the upper electrode, to generate capacitively coupled plasma between the showerhead 10, which is the upper electrode, and the substrate mounting table 2, which is the lower electrode.
- the frequency of the high frequency power supply 30 is preferably in the range of 0.1-1000 MHz.
- the high-frequency power feed circuit 40 has a feed line 41 from the high-frequency power supply 30 , a negative impedance section 42 as a matching device, and a booster or amplifier section 43 .
- the power supply line 41 is connected from the high frequency power supply 30 to the shower head 10 which is the upper electrode.
- the negative impedance unit 42 is connected to the power supply line 41 and realizes a negative impedance corresponding to the impedance of the plasma (load) generated in the processing container (chamber) 1. It functions as a matching device that matches the impedance of the side. Since the negative impedance section 42 has a negative impedance corresponding to the impedance of the plasma load, it functions to cancel the impedance of the plasma load including the frequency characteristics.
- the negative impedance section 42 may be composed of a negative impedance conversion circuit, or may be composed of a metamaterial.
- a negative impedance conversion circuit is a circuit that realizes negative impedance.
- a metamaterial is an artificial substance in which structures smaller than the wavelength of electromagnetic waves are integrated to artificially manipulate the electromagnetic properties of the substance. Metamaterials can realize behaviors that are not found in substances in the natural world against electromagnetic waves. In this example, it is configured to achieve a negative impedance.
- the boosting or amplifying section 43 is provided downstream of the negative impedance section 42 of the feed line 41 and has a function of outputting the output of the negative impedance section 42 at a high voltage.
- a booster that boosts voltage or an amplifier that amplifies power can be used as the boosting or amplifying unit 43.
- a booster circuit using a step-up transformer can be used as the booster, and an amplifier circuit using a transistor can be used as the amplifier.
- FIG. 2 shows an example in which a negative impedance conversion circuit is used as the negative impedance section 42 and a booster including a step-up transformer is used as the boosting or amplifying section 43 .
- the negative impedance conversion circuit as the negative impedance section 42 has an operational amplifier 44 and two resistors 45 and 46 .
- An inverting input terminal 47 of the operational amplifier 44 is connected to the feed line 41 from the high frequency power supply 30 .
- the output from the output terminal 48 of the operational amplifier 44 is input again to the inverting input terminal 47 via the resistor 45 and is input to the non-inverting input terminal 49 via the resistor 46 .
- a non-inverting input terminal 49 is connected to a step-up transformer of a step-up transformer that constitutes the step-up or amplification section 43 .
- the impedance of the plasma generated between the showerhead 10, which is the upper electrode, and the substrate mounting table 2, which is the lower electrode, is inverted to negative. configured to achieve impedance.
- the sizes of resistors 45 and 46 and operational amplifier 44 are appropriately set to have the intended function. Note that other impedance elements such as capacitors and coils may be used instead of the resistors 45 and 46 .
- the negative impedance conversion circuit is not limited to one using an operational amplifier as shown in FIG. 2, and various conventionally known circuits such as circuits using transistors can be used.
- the control unit 60 controls the valves, the flow rate controller, the high-frequency power source, etc. of the gas supply unit 20 , which are the components of the plasma processing apparatus 100 .
- the control unit 60 has a main control unit having a CPU, an input device, an output device, a display device, and a storage device. Then, the processing of the plasma processing apparatus 100 is controlled based on the processing recipe stored in the storage medium of the storage device.
- a gate valve (not shown) is opened, and a substrate W is carried into the processing container 1 through the loading/unloading port by a transfer device (not shown) and placed on the substrate mounting table 2 . After retracting the transfer device, close the gate valve.
- high-frequency power is supplied from the high-frequency power supply 30 to the shower head 10 as the upper electrode through the high-frequency power supply circuit 40 while introducing the processing gas into the processing chamber 1 .
- a high-frequency electric field is formed between the showerhead 10, which is the upper electrode, and the substrate mounting table 2, which is the lower electrode, and capacitively coupled plasma is generated between them.
- Plasma processing such as film formation is performed.
- the plasma impedance (reactance) including the frequency characteristic can be changed as shown in FIG. can be canceled by Therefore, it is theoretically possible to match the impedance at all frequencies, and it is possible to match the impedance on the power supply side and the load side in a wide frequency band.
- impedance matching is possible in such a wide frequency band, matching is possible even for rectangular waves and sawtooth waves having multiple frequency components. Further, as shown in FIG. 7, when high-frequency power sources 30a to 30c of a plurality of frequencies are provided and high-frequency powers of a plurality of frequencies are supplied to the processing container (chamber), one negative impedance section 42 can be provided. It is sufficient, and the system does not become large and the cost does not increase.
- the negative impedance conversion circuit that constitutes the negative impedance section 42 is known, but all of them are intended for low voltage applications such as the communication field, and there are no examples of application to high voltage applications such as plasma ignition. do not have.
- a negative impedance conversion circuit using an operational amplifier as shown in FIG. Difficult to deal with is known, but all of them are intended for low voltage applications such as the communication field, and there are no examples of application to high voltage applications such as plasma ignition. do not have.
- the high-frequency power supply circuit 40 has a configuration in which the step-up or amplification section 43 is provided after the negative impedance section 42 that constitutes the matching box. Even if the voltage is small, it is possible to secure the voltage necessary for plasma ignition.
- FIG. 8 is a cross-sectional view schematically showing a plasma processing apparatus according to the second embodiment.
- a plasma processing apparatus 100a of the present embodiment combines a matching box having a plurality of negative impedance sections 42 instead of the high-frequency power supply circuit 40 of the first embodiment, and outputs of the plurality of negative impedance sections 42.
- a high frequency power supply circuit 40a having a synthesizer 55 is provided.
- the high frequency power from the high frequency power supply 30 is supplied to the plurality of negative impedance units 42, the outputs from the plurality of negative impedance units 42 are combined by the combiner 55, and the input power is increase. After combining, the output is boosted or boosted by the booster used as the amplifier 43, as in the first embodiment.
- the booster used as the amplifier 43, as in the first embodiment.
- sufficient power can be secured. For example, a voltage of 25 V to 2 kV and a combined power of 0.1 W to 50 kW can be applied to the showerhead 10 . Plasma ignition can be performed more easily by increasing the voltage and power in this way.
- FIG. 9 is a cross-sectional view schematically showing a plasma processing apparatus according to the third embodiment.
- a plasma processing apparatus 100b of this embodiment has a high-frequency power supply circuit 40b obtained by removing the boosting or amplifying section 43 from the high-frequency power supply circuit 40 of the first embodiment.
- the same components as those of the plasma processing apparatus 100 of FIG. 9 are identical components as those of the plasma processing apparatus 100 of FIG.
- the output voltage of the negative impedance section 42 constituting the matching box is set to a voltage capable of igniting the plasma, and the negative impedance section 42 is directly connected to the shower head 10, which is the upper electrode. .
- the negative impedance conversion circuit that constitutes the negative impedance unit 42 is intended for low-voltage applications such as the communication field, and there is no example of application to high-voltage applications such as plasma ignition.
- a negative impedance conversion circuit using an operational amplifier general-purpose operational amplifiers use elements that are driven at a low voltage of 15 V or less, so it is difficult to handle plasma ignition that requires a high voltage of 50 V or more.
- a booster such as a step-up transformer is used as the boosting or amplifying section 43 .
- the high-frequency power supply circuit is configured as follows so that the step-up or amplification unit 43 may not be used.
- the negative impedance unit 42 is configured by a negative impedance conversion circuit having an operational amplifier 44 as shown in FIG. output voltage can be realized.
- operational amplifier 44 has input stage 71 , gain stage 72 and output stage 73 .
- a specific circuit is a combination of a plurality of transistors, and has a configuration as shown in FIG. 12, for example.
- Input stage 71 is a differential amplifier stage that amplifies the differential voltage between inverting input terminal 47 and non-inverting input terminal 49 and cancels the common mode signal component without amplifying it.
- Gain stage 72 increases the open gain of op amp 44 .
- a phase compensation capacitor 74 for preventing oscillation is connected between the gain stages 72 .
- the output stage 73 is a push-pull circuit having a plurality of transistors 81 and the output voltage is determined by the transistors 81 . Therefore, the transistor 81 has a high voltage that enables plasma ignition at the high frequency used in this embodiment. Examples of high-performance transistors capable of high-frequency operation at such high voltages include GaN, Ga 2 O 3 , and diamond.
- a general-purpose operational amplifier 44 is used, and a booster circuit 56 such as a transistor circuit that realizes a high voltage capable of plasma ignition is connected to its subsequent stage.
- An impedance conversion circuit may be used.
- FIG. 14 is a cross-sectional view schematically showing the main part of the plasma processing apparatus according to the fourth embodiment.
- the plasma processing apparatus 100c of this embodiment has a configuration in which the negative impedance section 42 is connected to the showerhead 10 without an amplifier, as in the third embodiment. It has a feeding circuit 40c.
- the same components as those of the plasma processing apparatus 100 of FIG. 14 are identical to those of the plasma processing apparatus 100 of FIG.
- feed lines extending from each of the plurality of negative impedance portions 42 are connected to the shower head 10, which is the upper electrode, so as to feed power at multiple points.
- outputs from a plurality of negative impedance sections 42 may be combined by a combiner 57 to supply power to the shower head 10, which is the upper electrode, at one point.
- FIG. 16 is a configuration diagram schematically showing a plasma processing apparatus according to the fifth embodiment.
- the impedance of the matching box including the negative impedance section 42 can be adjusted.
- the impedance of the load plasma fluctuates little, there is no need to adjust the impedance of the matching box including the negative impedance section 42.
- the plasma conditions fluctuate and the plasma impedance fluctuates greatly adjustment is necessary. can be
- the plasma processing apparatus 100d of this embodiment includes a high-frequency power supply circuit 40d having a matching box composed of a negative impedance section 42 and a variable reactance circuit 91 as an impedance adjustment section.
- FIG. 16 shows an example using a negative impedance conversion circuit having an operational amplifier 44 as shown in FIG.
- the variable reactance circuit 91 has a variable coil and/or a variable capacitor, and is connected to a negative impedance conversion circuit that constitutes the negative impedance section 42 .
- the impedance of the matching box is adjusted by the variable reactance circuit 91 according to the conditional fluctuations of the plasma generated inside the processing container 1 .
- the impedance on the power supply side can be matched with the impedance of the plasma that is the load.
- FIG. 17 is a configuration diagram schematically showing a plasma processing apparatus according to the sixth embodiment.
- the impedance of the matching box including the negative impedance section 42 can be adjusted so that it can cope with the case where the plasma impedance fluctuates greatly. is.
- the plasma processing apparatus 100e of this embodiment includes a high-frequency power feed circuit 40e having a matching box composed of a negative impedance section 42 and a plasma generation section 92 as an impedance adjustment section. 17 also shows an example using a negative impedance conversion circuit having an operational amplifier 44 as shown in FIG.
- the plasma generating section 92 has an upper electrode 10' and a lower electrode 2'. Plasma is simultaneously generated in the plasma generator 92 with the same recipe as the processing container 1 .
- the plasma generation section 92 is connected to a negative impedance conversion circuit that constitutes the negative impedance section 42 .
- the plasma generation section 92 that generates plasma with the same recipe as the plasma generated in the processing container 1 is connected to the negative impedance conversion circuit that constitutes the negative impedance section 42 .
- the same impedance as the plasma generated in the processing container 1 is negatively inverted by the negative impedance conversion circuit and becomes the impedance of the matching box. Therefore, the impedance of the matching device can cancel the impedance of the plasma in the processing container 1, and even if the impedance of the plasma fluctuates, the impedance of the power supply side can be matched with the impedance of the plasma that is the load.
- FIG. 18 is a configuration diagram schematically showing a plasma processing apparatus according to the seventh embodiment.
- the impedance of the matching box including the negative impedance section 42 can be adjusted so that it can cope with the case where the plasma impedance fluctuates greatly. It is the one that was made.
- the plasma processing apparatus 100f of this embodiment includes a high-frequency power supply circuit 40f having a matching box composed of a negative impedance section 42 and an impedance mirroring circuit 93 as an impedance adjustment section. 18 also shows an example using a negative impedance conversion circuit having an operational amplifier 44 as shown in FIG.
- the impedance mirroring circuit 93 has an active element such as an operational amplifier, and its impedance is adjusted so that the same impedance as the plasma in the processing container 1 is realized. It is connected to the.
- the impedance of the impedance mirroring circuit 93 which has the same impedance as that of the plasma in the processing container 1, is negatively inverted by the negative impedance conversion circuit and becomes the impedance of the matching box. Therefore, the impedance of the matching device can cancel the impedance of the plasma in the processing container 1, and even if the impedance of the plasma fluctuates, the impedance of the power supply side can be matched with the impedance of the plasma that is the load.
- FIG. 19 shows voltage waveforms when two frequencies of 10 MHz and 5 MHz are superimposed. As shown in this figure, no distortion was observed in the voltage waveform when the plasma was generated by superimposing two frequencies. From this, it was inferred that by using a negative impedance conversion circuit as a matching box, impedance matching could be achieved for a plurality of frequencies even if the load was plasma.
- the present invention is not limited to this, and may be applied to the lower electrode or may be applied to both the upper electrode and the lower electrode. .
- the plasma is not limited to this, and other plasmas such as inductively coupled plasma and microwave plasma may be used.
- processing container chamber
- substrate mounting table lower electrode
- shower head upper electrode
- RF power supply circuit 42 Negative impedance section (negative impedance conversion circuit) 44; Operational amplifier 100, 100a, 100b, 100c, 100d, 100e, 100f;
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Abstract
Description
図1は、第1の実施形態に係るプラズマ処理装置を概略的に示す断面図である。
プラズマ処理装置100は、基板Wに対してプラズマ処理を行うものであり、容量結合プラズマ処理装置として構成されている。基板Wとしては、例えば半導体ウエハを挙げることができるが、これに限定されない。
まず、ゲートバルブ(図示せず)を開にして搬送装置(図示せず)により基板Wを搬入出口を介して処理容器1内に搬入し、基板載置台2上に載置する。搬送装置を退避させた後、ゲートバルブを閉じる。
本実施形態のプラズマ処理装置100aは、第1の実施形態の高周波電力給電回路40の代わりに、複数の負性インピーダンス部42を有する整合器と、複数の負性インピーダンス部42の出力を合成する合成器55とを備えた高周波電力給電回路40aを設けている。図8のプラズマ処理装置100aにおいて図1のプラズマ処理装置100と同じものには同じ符号を付して説明を省略する。
本実施形態のプラズマ処理装置100bは、第1の実施形態の高周波電力給電回路40から昇圧または増幅部43を除いた高周波電力給電回路40bを有している。図9のプラズマ処理装置100bにおいて、図1のプラズマ処理装置100と同じものには同じ符号を付して説明を省略する。
本実施形態のプラズマ処理装置100cは、第3の実施形態と同様の負性インピーダンス部42を増幅器を介することなくシャワーヘッド10に接続する構成であるが、負性インピーダンス部42を複数有する高周波電力給電回路40cを有している。図14のプラズマ処理装置100cにおいて、図1のプラズマ処理装置100と同じものには同じ符号を付して説明を省略する。
本実施形態のプラズマ処理装置100dは、負性インピーダンス部42を含む整合器のインピーダンスを調整可能としたものである。負荷であるプラズマのインピーダンスの変動が少ない場合は負性インピーダンス部42を含む整合器のインピーダンスを調整する必要がないが、プラズマの条件が変動してプラズマのインピーダンスが大きく変動する場合は調整が必要となることがある。
本実施形態のプラズマ処理装置100eは、第5の実施形態と同様、負性インピーダンス部42を含む整合器のインピーダンスを調整可能として、プラズマのインピーダンスが大きく変動する場合にも対応できるようにしたものである。
本実施形態のプラズマ処理装置100fは、第5および第6の実施形態と同様、負性インピーダンス部42を含む整合器のインピーダンスを調整可能として、プラズマのインピーダンスが大きく変動する場合にも対応できるようにしたものである。
まず、ネットワークアナライザを用いて、図2に示す負性インピーダンス変換回路の電力反射を測定した。その結果、周波数が13.5~310MHzの範囲で、反射電力に対応するSパラメータで表される反射割合S11が-10dB以下(電力の反射が1/10以下)であることが確認された。すなわち、負性インピーダンス変換回路を用いることにより広い周波数帯域でインピーダンス整合を行えることが確認された。
Claims (20)
- 基板に対してプラズマ処理を施すプラズマ処理装置であって、
基板が収容される処理容器と、
前記処理容器内にプラズマを生成するための高周波電力が印加される電極と、
前記電極に高周波電力を印加する高周波電源と、
前記高周波電源から前記電極へ高周波電力を給電する高周波電力給電回路と、
を備え、
前記高周波電力給電回路は、
前記高周波電源から前記電極へ給電する給電路と、
前記給電路に接続され、前記プラズマ側のインピーダンスに対応する負のインピーダンスを実現する負性インピーダンス部を含み、前記高周波電源側のインピーダンスと負荷であるプラズマ側のインピーダンスとを整合させる整合器と、
を有する、プラズマ処理装置。 - 前記負性インピーダンス部は、負性インピーダンス変換回路またはメタマテリアルで構成される、請求項1に記載のプラズマ処理装置。
- 前記負性インピーダンス変換回路は、オペアンプを有する、請求項2に記載のプラズマ処理装置。
- 前記オペアンプの出力段は、前記プラズマが着火可能な程度の電圧を出力する複数のトランジスタを有する、請求項3に記載のプラズマ処理装置。
- 前記負性インピーダンス変換回路は、前記オペアンプの後段に設けられた、プラズマ着火可能な程度の電圧を出力する昇圧回路をさらに有する、請求項3に記載のプラズマ処理装置。
- 前記整合器は前記負性インピーダンス部を複数有する、請求項1から請求項5のいずれか一項に記載のプラズマ処理装置。
- 前記高周波電力給電回路は、複数の前記負性インピーダンス部の出力を合成する合成器をさらに有する、請求項6に記載のプラズマ処理装置。
- 前記高周波電力給電回路は、前記負性インピーダンス部の出力を昇圧する昇圧器、または出力を増幅する増幅器をさらに有する、請求項1から請求項7のいずれか一項に記載のプラズマ処理装置。
- 前記整合器は、前記負性インピーダンス部に接続され、前記整合器のインピーダンスを調整するインピーダンス調整部をさらに有する、請求項1から請求項8のいずれか1項に記載のプラズマ処理装置。
- 前記インピーダンス調整部は、可変キャパシタおよび/または可変コイルを有する可変リアクタンス回路を有する、請求項9に記載のプラズマ処理装置。
- 前記インピーダンス調整部は、前記処理容器に生成されるプラズマと同一レシピでプラズマが生成されるプラズマ生成部を有する、請求項9に記載のプラズマ処理装置。
- 前記インピーダンス調整部は、能動素子を有し、前記処理容器内のプラズマと同じインピーダンスを有するようにインピーダンスが調整されるインピーダンスミラリング回路を有する、請求項9に記載のプラズマ処理装置。
- 高周波電源からプラズマを生成するための高周波電力を電極に給電する高周波電力給電回路であって、
前記高周波電源から前記電極へ給電する給電路と、
前記給電路に接続され、前記プラズマ側のインピーダンスに対応する負のインピーダンスを実現する負性インピーダンス部を含み、前記高周波電源側のインピーダンスと負荷であるプラズマ側のインピーダンスとを整合させる整合器と、
を有する、高周波電力給電回路。 - 前記負性インピーダンス部は、負性インピーダンス変換回路または負のインピーダンスを有するメタマテリアルである、請求項13に記載の高周波電力給電回路。
- 前記負性インピーダンス変換回路は、オペアンプを有する請求項14に記載の高周波電力給電回路。
- 前記整合器は前記負性インピーダンス部を複数有する、請求項13から請求項15のいずれか一項に記載の高周波電力給電回路。
- 前記負性インピーダンス部の出力を昇圧する昇圧器、または出力を増幅する増幅器をさらに有する、請求項13から請求項16のいずれか一項に記載の高周波電力給電回路。
- 前記整合器は、前記負性インピーダンス部に接続され、前記整合器のインピーダンスを調整するインピーダンス調整部をさらに有する、請求項13から請求項17のいずれか1項に記載の高周波電力給電回路。
- 高周波電力を供給してプラズマを生成する際に実行されるインピーダンス整合方法であって、
高周波電源から給電路を介してプラズマを生成するための高周波電力を電極に給電することと、
前記給電路に接続され、前記プラズマ側のインピーダンスに対応する負のインピーダンスを実現する負性インピーダンス部を含む整合器により、前記高周波電源側のインピーダンスと負荷であるプラズマ側のインピーダンスとを整合させることと、
を含む、インピーダンス整合方法。 - 前記負性インピーダンス部は、負性インピーダンス変換回路または負のインピーダンスを有するメタマテリアルである、請求項19に記載のインピーダンス整合方法。
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US5288971A (en) * | 1991-08-09 | 1994-02-22 | Advanced Energy Industries, Inc. | System for igniting a plasma for thin film processing |
JP2005303503A (ja) * | 2004-04-08 | 2005-10-27 | General Res Of Electronics Inc | 負性インピーダンス変換器 |
JP2008505447A (ja) * | 2004-07-02 | 2008-02-21 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッド | ダイナミックインピーダンスのリアルタイム推定を用いたdc電力供給装置 |
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US5288971A (en) * | 1991-08-09 | 1994-02-22 | Advanced Energy Industries, Inc. | System for igniting a plasma for thin film processing |
JP2005303503A (ja) * | 2004-04-08 | 2005-10-27 | General Res Of Electronics Inc | 負性インピーダンス変換器 |
JP2008505447A (ja) * | 2004-07-02 | 2008-02-21 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッド | ダイナミックインピーダンスのリアルタイム推定を用いたdc電力供給装置 |
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