KR20070116971A - 마이크로파 발생 장치 및 마이크로파 발생 방법 - Google Patents

마이크로파 발생 장치 및 마이크로파 발생 방법 Download PDF

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Publication number
KR20070116971A
KR20070116971A KR1020077025383A KR20077025383A KR20070116971A KR 20070116971 A KR20070116971 A KR 20070116971A KR 1020077025383 A KR1020077025383 A KR 1020077025383A KR 20077025383 A KR20077025383 A KR 20077025383A KR 20070116971 A KR20070116971 A KR 20070116971A
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KR
South Korea
Prior art keywords
microwave
signal
switching power
switch signal
fundamental frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020077025383A
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English (en)
Korean (ko)
Inventor
시게루 가사이
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20070116971A publication Critical patent/KR20070116971A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B28/00—Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/68—Circuits for monitoring or control
    • H05B6/686—Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
KR1020077025383A 2005-04-04 2006-03-31 마이크로파 발생 장치 및 마이크로파 발생 방법 Ceased KR20070116971A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00107953 2005-04-04
JP2005107953A JP2006287817A (ja) 2005-04-04 2005-04-04 マイクロ波発生装置、マイクロ波供給装置、プラズマ処理装置及びマイクロ波発生方法

Publications (1)

Publication Number Publication Date
KR20070116971A true KR20070116971A (ko) 2007-12-11

Family

ID=37073495

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077025383A Ceased KR20070116971A (ko) 2005-04-04 2006-03-31 마이크로파 발생 장치 및 마이크로파 발생 방법

Country Status (5)

Country Link
US (1) US20090267669A1 (enExample)
JP (1) JP2006287817A (enExample)
KR (1) KR20070116971A (enExample)
CN (1) CN101156314A (enExample)
WO (1) WO2006106945A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220016968A (ko) * 2019-06-12 2022-02-10 도쿄엘렉트론가부시키가이샤 마이크로파 공급 기구, 플라스마 처리 장치 및 플라스마 처리 방법

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US7777567B2 (en) * 2007-01-25 2010-08-17 Mks Instruments, Inc. RF power amplifier stability network
JP4882824B2 (ja) * 2007-03-27 2012-02-22 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5344733B2 (ja) * 2007-09-14 2013-11-20 株式会社日立ハイテクノロジーズ 高周波電力発生装置
KR101282026B1 (ko) * 2007-10-15 2013-07-04 삼성전자주식회사 표면 탄성파 센서 및 표면 탄성파를 이용한 센싱 방법
WO2010091697A1 (de) * 2009-02-13 2010-08-19 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zur leistungsversorgung eines plasmaprozesses und plasmaversorgungseinrichtung
CN202721890U (zh) * 2009-02-13 2013-02-06 许廷格电子两合公司 用于等离子体供给装置的模块和等离子体供给装置
WO2010110256A1 (ja) * 2009-03-27 2010-09-30 東京エレクトロン株式会社 チューナおよびマイクロ波プラズマ源
US8659335B2 (en) * 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
TWI425876B (zh) * 2010-09-30 2014-02-01 Beyond Innovation Tech Co Ltd 螢光燈管的驅動裝置與方法
TWI462649B (zh) * 2011-07-11 2014-11-21 Beyond Innovation Tech Co Ltd 螢光燈管的驅動裝置
JP5817906B2 (ja) * 2012-02-23 2015-11-18 東京エレクトロン株式会社 プラズマ処理装置、および高周波発生器
CN102679417B (zh) * 2012-05-21 2014-06-11 广东美的厨房电器制造有限公司 半导体微波炉
CN103580608B (zh) * 2013-09-11 2016-08-31 昆山龙仕达电子材料有限公司 一种可调信号源电路
US10368404B2 (en) * 2014-03-21 2019-07-30 Whirlpool Corporation Solid-state microwave device
TW201613421A (en) 2014-07-03 2016-04-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP6817889B2 (ja) * 2016-05-10 2021-01-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6718788B2 (ja) * 2016-10-18 2020-07-08 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
JP6754665B2 (ja) * 2016-10-18 2020-09-16 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
US10790118B2 (en) * 2017-03-16 2020-09-29 Mks Instruments, Inc. Microwave applicator with solid-state generator power source
US10707058B2 (en) 2017-04-11 2020-07-07 Applied Materials, Inc. Symmetric and irregular shaped plasmas using modular microwave sources
WO2019055476A2 (en) * 2017-09-14 2019-03-21 Cellencor, Inc. HIGH POWER SEMICONDUCTOR MICROWAVE GENERATOR FOR RADIO FREQUENCY ENERGY APPLICATIONS
CN111262528A (zh) * 2020-03-04 2020-06-09 扬州嘉明环保科技有限公司 一种简易而稳定的正弦波信号发生电路
US11159124B2 (en) * 2020-03-09 2021-10-26 Biosense Webster (Israel) Ltd. Sine-wave generation using pulsed D-class amplifier
JP2022091378A (ja) * 2020-12-09 2022-06-21 東京エレクトロン株式会社 電源および検査装置
JP2024068670A (ja) * 2022-11-09 2024-05-21 シャープ株式会社 装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895368A (en) * 1972-08-09 1975-07-15 Sensormatic Electronics Corp Surveillance system and method utilizing both electrostatic and electromagnetic fields
EP0691733A2 (en) * 1994-07-08 1996-01-10 Victor Company Of Japan, Ltd. Frequency converting circuit
JPH10200363A (ja) * 1997-01-09 1998-07-31 Toshiba Corp 弾性表面波装置及びその製造方法
US6384540B1 (en) * 1997-02-24 2002-05-07 Advanced Energy Industries, Inc. System for high power RF plasma processing
JP2002280846A (ja) * 2001-03-14 2002-09-27 Toshiba Corp マイクロ波回路
JP3998986B2 (ja) * 2002-01-22 2007-10-31 株式会社ダイヘン 高周波電源の進行波電力制御方法及び高周波電源装置
JP3992580B2 (ja) * 2002-10-01 2007-10-17 東京エレクトロン株式会社 プラズマ処理装置
TW551782U (en) * 2002-10-09 2003-09-01 Ind Tech Res Inst Microwave plasma processing device
JP2005064658A (ja) * 2003-08-08 2005-03-10 Mitsubishi Electric Corp 電力増幅器用過出力電圧保護回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220016968A (ko) * 2019-06-12 2022-02-10 도쿄엘렉트론가부시키가이샤 마이크로파 공급 기구, 플라스마 처리 장치 및 플라스마 처리 방법

Also Published As

Publication number Publication date
CN101156314A (zh) 2008-04-02
US20090267669A1 (en) 2009-10-29
JP2006287817A (ja) 2006-10-19
WO2006106945A1 (ja) 2006-10-12

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