WO2006085515A1 - 反射率制御光学素子及び超薄膜光吸収増強素子 - Google Patents
反射率制御光学素子及び超薄膜光吸収増強素子 Download PDFInfo
- Publication number
- WO2006085515A1 WO2006085515A1 PCT/JP2006/302029 JP2006302029W WO2006085515A1 WO 2006085515 A1 WO2006085515 A1 WO 2006085515A1 JP 2006302029 W JP2006302029 W JP 2006302029W WO 2006085515 A1 WO2006085515 A1 WO 2006085515A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- reflectance
- light
- ultrathin
- thickness
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/206—Filters comprising particles embedded in a solid matrix
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
Definitions
- the present invention relates to an optical element that can change the reflectance and absorption rate of light according to the wavelength.
- Patent Document 1 an island-shaped metal thin film having a small metal particle force with a diameter of 100 mm or less is used as one optical recording layer, and a plurality of island-shaped metal thin films having different spectral characteristics and a transparent resin layer are laminated. It is described that the multilayer film structure obtained by the above is used as a wavelength multiplexing optical recording medium. When laser light with a high energy density near the resonance wavelength of each metal thin film is irradiated, the metal particles absorb the light and generate heat, and the surrounding transparent resin medium melts or deforms locally. The mark is recorded by changing the reflectance of.
- Patent Document 2 discloses a light-transmitting material ablation-type three-layer optical system including a light-reflecting material, a layer of a light-transmitting material on the light-reflecting material, and a layer of a light-absorbing material on the light-transmitting layer. According to this, the light reflectance of the light absorbing material layer can be reduced by appropriately setting the thickness of the light transmitting layer and the thickness of the light absorbing material layer.
- Patent Document 3 in a three-layer optical recording medium as described in Patent Document 2, metal particles having a particle size of about 10 to 30 nm are independently separated from each other by about 5 to 20 nm in the outermost layer. A technique using a so-called island film in the existing form is disclosed. In Patent Document 3, gold having excellent stability in the air is used as the metal particles.
- the peripheral portion of the irradiated area is thermally aggregated and the gap is increased, resulting in a decrease in light absorption at that area.
- Optical recording can be performed by utilizing this optical change.
- Patent Document 1 JP 2002-11957 A
- Patent Document 2 US Patent No. 4329697
- Patent Document 3 International Publication No. 83/043327 Pamphlet
- the reflectance control optical element according to the present invention which has been made to solve the above-mentioned problems, is a reflectance control optical element in which the reflectance of light changes according to the wavelength, and has a high reflectance.
- the ultrathin film is a metal thin film in a state where metal nanoparticles having an average particle size of lOnm or less are in close contact with or in contact with each other. Is composed of a displacement force of a white metal element alone, an alloy of white metal elements, an alloy of white metal element and nickel.
- the light absorption enhancing element in the ultrathin film which is another aspect of the reflectance control optical element according to the present invention, is such that the substrate surface is a light-scattering reflection film in the reflectance control optical element. It is characterized by
- light includes electromagnetic waves other than visible light.
- the reflectance control optical element of the present invention since the reflectance changes according to the wavelength, the reliability of the optical recording medium for recording or reproducing digital information can be remarkably improved by the change in reflectance. .
- the wavelength at which the reflectance is maximized and the wavelength at which the reflectance is minimized can be freely controlled. be able to.
- the ultra-thin film is a metal thin film in which platinum-based metal nanoparticles with an average particle size of 10 or less are in close contact with or in contact with each other. Therefore, when the reflectance control optical element of the present invention is used as an optical recording medium, it is possible to realize high-density recording using its high resolution. It becomes possible.
- the basic structure of this element is a simple structure consisting of three layers, so it also has the advantage that the manufacturing cost is very low.
- the light absorption enhancing element which is another form of the reflectance control optical element according to the present invention, can enhance the light absorption effect in the ultrathin film by 10 times or more with a very simple structure. it can. Therefore, it is possible to form an ultrathin film having a very small thickness and excellent light absorption ability.
- FIG. 1 is a schematic configuration diagram of a reflectance control optical element according to the present invention.
- FIG. 2 AFM image of Pt ultra-thin film produced by DC sputtering.
- FIG. 3 AFM image after irradiating the ultrathin Pt film in Fig. 2 with a pulsed laser.
- FIG. 5 is a graph showing the reflectance of the reflectance control optical element according to the present invention.
- FIG. 7 is a graph showing the reflectance when the thickness of the transparent film is 90 nm.
- FIG. 9 is a graph showing the relationship between the thickness of an ultrathin film and the reflectance.
- FIG. 12 is a schematic configuration diagram of the light absorption enhancing element in the ultrathin film according to the present invention (upper stage), and an explanatory view of the expression of the light absorption enhancing effect (lower stage).
- FIG. 13 is a diagram showing another configuration of the light absorption enhancing element in the ultrathin film according to the present invention.
- FIG. 15 is a graph showing the relationship between the excitation light wavelength and fluorescence intensity of each comparative element.
- ⁇ 22] Device configuration diagram in the case where the reflectance is changed by changing the thickness of the transparent film, and a table showing the relationship between the thickness of the transparent film and the reflectance.
- FIG.23 Scanning interference pattern produced by irradiating pulsed laser onto ultrathin Pt film (thickness 5mm) Electron microscope image.
- FIG. 24 Optical microscope image of an interference pattern produced by irradiating a pulsed laser onto an ultra-thin Pt film (thickness 20 °).
- FIG. 25 is a graph showing the first-order diffraction efficiency of a diffraction grating created using the element according to the present invention. Explanation of symbols
- FIG. 1 shows a schematic diagram of a reflectance control optical element according to the present invention.
- the reflectance control optical element according to the present invention basically comprises three layers: a substrate transparent film 2 and an ultrathin film 3.
- a substrate transparent film 2 and an ultrathin film 3.
- the material for forming each layer will be described.
- the material for forming the substrate is not particularly limited, but from the viewpoint of obtaining a large difference in reflectance, it is naturally desirable that the material has as high a reflectance as possible. Examples of such materials are metals such as aluminum, gold and silver. Further, the thickness of the substrate is not limited in the present invention, and it may be a thin film or a balta! /.
- the material for forming the transparent film may be any glass or polymer, as long as it is a light-transmitting substance. However, from the viewpoint of obtaining a high reflectivity, it is as transparent as possible. High (low light absorption) is desirable. Further, when utilizing the light absorption enhancement effect of the reflectance control optical element of the present invention, a transparent electrode such as ITO (Indium Tin Oxide) may be used as the transparent film. Yo! /
- the reflectance corresponding to the wavelength of the reflectance control optical element of the present invention varies depending on the thickness and refractive index of the transparent film.
- the ultra-thin film is formed on the surface of the transparent film, and the thickness is usually several tens or less.
- the existence of this ultra-thin film is considered to be the main cause of large changes in reflectivity.
- the material for forming the ultrathin film is not particularly limited, but in order to increase the change in reflectance, the light absorption is high (in the present invention as described later, it is preferable). In the case of an appropriate thickness, it is desirable to use a material whose light absorptivity exceeds the reflectance.
- the ultrathin film is composed of metal nanoparticle forces, and is dense so that each particle is close to or in contact with each other.
- the layer is formed into a metal thin film that is almost uniformly distributed in the plane direction.
- the average particle size of the metal nanoparticles is preferably 3 to 10 nm.
- a metal thin film having such a structure can be produced by, for example, DC sputtering.
- Figure 2 shows an AFM image of an ultra-thin platinum (Pt) film prepared by DC sputtering. The film thickness is about 5 mm.
- Such a metal thin film is optically equivalent to a completely continuous film, and is capable of using Balta's optical constant in simulation, which is advantageous for device design.
- thermal and electrical discontinuities make it difficult for heat diffusion along the film to occur, and the conductivity is low.
- the ultrathin film having the above characteristics is advantageous when the element according to the present invention is used as an optical recording medium.
- the metal nanoparticles existing in the region absorb the energy of the irradiated light, generate heat and melt, and a plurality of metal nanoparticles merge to form aggregated particles.
- light absorption does not occur for the following reason, so that a region substantially free of an ultrathin film can be formed.
- the energy concentrates only on the portion of the ultrathin film that has been irradiated with the laser.
- a white metal element such as platinum or palladium is particularly suitable as a metal that can realize the ultrathin film as described above relatively easily.
- the element of white metal has a low thermal conductivity of about 1/5 and is excellent in chemical stability and thermal stability.
- independent spherical nanoparticles of white metal elements have almost absorption in the visible light region.
- FIG. 3 shows the AFM image of the ultrathin platinum film in Fig. 2 after irradiation with a pulse laser. It is observed that the platinum that has spread in the form of a film is agglomerated in a spherical shape. Thus, even after laser irradiation, several tens of percent of the total area is covered with agglomerated particles (Fig. 3), but the absorption spectra before and after the pulse laser irradiation shown in Fig. 4 As shown by the change graph, it can be seen that there is almost no light absorption.
- the white metal element may be used alone or an alloy.
- the material forming the ultrathin film can be a hard material such as nickel or an alloy with the material.
- the reflectance according to the wavelength of the reflectance control optical element according to the present invention varies depending on the thickness of the transparent film 2.
- Figure 5 shows a device in which silver is used for the substrate, PVA (Poly Vinyl Alcohol) is used for the transparent film, platinum is used for the ultrathin film, the thickness of the transparent film is 2.6 ⁇ m, and the thickness force of the ultrathin film.
- the graph which measured the reflectance of is shown.
- FIG. 6 shows a graph of reflectance when the thickness of the transparent film is 0.5 ⁇ m under the above conditions.
- Figure 7 shows a graph of reflectivity when the thickness of the transparent film is 90 °. It is confirmed that the maximum / minimum period of the reflectance is increased by reducing the thickness of the transparent film. Also, this result was in very good agreement with the simulation result conducted by the present inventor. That is, by appropriately setting the thickness of the transparent film, it is possible to design a reflectance control optical element having a characteristic that the reflectivity greatly decreases at a desired wavelength. ⁇ Refractive index of transparent film>
- FIG. 8 shows a graph showing the reflectance in this case. It was found that the change in reflectance with respect to the wavelength of incident light can be controlled by decreasing the thickness of the transparent film as the refractive index of the transparent film increases. In addition, it was confirmed that it is preferable to use a transparent film having a relatively low refractive index in order to greatly reduce the reflectance in the widest possible wavelength range.
- the substrate was silver, and a spin-on glass (refractive index n ⁇ l.3 to 1.5) was used as the transparent film, and the thickness of the ultrathin film (platinum) was varied between 3 and 10 degrees.
- Figure 9 shows the results. In Fig. 9, the thickness of the ultrathin film decreases in the order of 1-7. From this result, it was confirmed that the reflectance was greatly reduced by the presence of an ultra-thin film with a thickness of several nm.
- the thickness of the ultra-thin film is too large or too small, the reflectivity tends to increase as a whole, and the thickness is about several nm to several tens of nm. It was confirmed that the reflectance decreased most.
- the light transmittance at that wavelength of the ultra-thin film is 30-60%. It was found that it was preferable to set the thickness so that
- a dye can be used as the material for the ultrathin film.
- the dye is not limited to what is generally called a dye, but refers to a material having a property of absorbing light in a specific wavelength range. This includes composite materials that contain pigments as the main component. With the dye alone, the light absorption rate does not change much as the thickness of the dye film increases. On the other hand, by using the dye in the ultrathin film of the element of the present invention, the light absorption rate can be remarkably increased.
- an ultrathin film with a plurality of dyes having different light absorption characteristics.
- the dyes may be mixed together, or an ultrathin film may be formed by overlapping the layers of each dye.
- the graph of the simulation result of the reflectance of is shown. From FIG. 11, it can be seen that this element has a reflectance characteristic in which the decrease in reflectance at the light absorption wavelength unique to each pixel overlaps.
- the reflectance control optical element according to the present invention can be made extremely low in reflectance by appropriately designing its configuration. In other words, this means that the light absorption rate in the ultrathin film can be greatly increased.
- optical functional devices such as an optical sensor and a photoelectric conversion element have a laminated structure including a photoexcitation layer (light absorption layer). It is desirable that the thickness of the light absorption layer be as small as possible because energy transfer and mass transfer across the layer interface play an important role in the energy of non-equilibrium and charge carriers (electrons and holes) generated in the light absorption layer. . Otherwise, these carriers are deactivated inside the light absorption layer, and the intended function is not exhibited. Reduce the thickness of the light absorption layer to the monolayer level!
- An example of a typical device in which the light absorption layer is formed thin is a dye-sensitized solar cell that utilizes light absorption of a dye adsorbed on the surface of titanium oxide.
- the light capture (absorption) efficiency of the dye layer at the monomolecular layer level is about several to 10% due to its thinness. Will fall to a degree.
- the effective surface area for dye adsorption can be increased by making titanium oxide nanoparticle aggregates or making them porous. The technique to take is taken. However, this method cannot always be extended in general, and there is a problem that the system naturally becomes complicated. At the same time, there is also the problem of high costs.
- the light absorptivity of the thin layer at the monomolecular layer level can be increased by 10 times or more, the light capture rate nearly 100% can be obtained, which is compared with the conventional ones.
- Optical functional devices can be realized with a much simpler element structure.
- the present inventor has applied the surface of the substrate in the reflectance control optical element according to the present invention.
- the present inventors have come up with a configuration that provides a light-scattering reflective film. That is, for example, as shown in FIG. 12, a light-scattering reflective film 1S is provided on the surface of the substrate 1, a transparent film 2 is provided on the light-scattering reflective film 1S, and an ultrathin film 3 is provided on the transparent film.
- the configuration is as follows.
- the ultrathin film should use a dye from the viewpoint of enhancing the light absorption capability.
- a platinum-based metal used in the reflectance control optical element may be used.
- “ultra-thin film” is appropriately referred to as “absorption layer”.
- the standard absorption enhancement several times that obtained with a three-layer structure having a transparent film of about lOOnm is maintained even in a system in which light scattering occurs in this way.
- the combined effect of these effects is remarkable. Normally, only a few percent of light absorption is available. Even with ultra-thin films, the light absorption can be improved by a factor of 10 or more.
- the optimum roughness of the light-scattering reflective film 1S depends on the thickness of the transparent film. As described above, in the reflectance control optical element according to the present invention, the reflectance should be increased. In order to decrease, that is, to obtain a high absorption rate, it is desirable that the refractive index of the transparent film 2 is as low as possible, and the optimum thickness of the transparent film 2 is about lOOnm (described later). For this reason, the upper limit of the roughness of the light-scattering reflective film 1S is about 100 when expressed by a ten-point average roughness (Rz) value. More preferably, the roughness of the light-scattering reflective film 1S is about 20% of the thickness of the transparent film 2.
- the period in which the height is formed in the light-scattering reflective film 1S is approximately the same as the wavelength of incident light.
- a reflective film having such a roughness can be produced relatively easily by using, for example, a DC sputtering method.
- the surface of the transparent film 2 has the same degree as the light scattering reflection film substrate as shown in FIG. It is desirable to have a roughness of.
- the transparent film 2 having such a suitable roughness can be naturally obtained by forming the transparent film 2 by spin-on-glass (hereinafter abbreviated as SOG).
- rhodamine B (RhB), a fluorescent organic dye, was dissolved at a concentration of 0.05 mM in a 0.1% polybulual alcohol aqueous solution, and this solution was spin-coated on a transparent film at 3000 rpm. .
- the film thickness of the ultrathin film thus obtained was about 3 mm, and the amount of RhB dye contained therein was 1.3 to 2.0 ⁇ 10 13 / cm 2 as the number of molecules per unit projected area. This supported amount was within the above range regardless of whether the surface of the transparent film was smooth or rough.
- the ultrathin film itself has an optical absorptance of about 1% at the maximum absorption wavelength. In the experiment, instead of directly measuring the absorptance, we measured the fluorescence intensity when photoexcited under the same conditions in order to see the effect of increasing the absorptance.
- Substrate None, Transparent film: Slide glass (thickness: about lmm), Ultrathin film: RhB b. Substrate: High reflective film (Ag), Transparent film: Slide glass, Ultrathin film: RhB
- Substrate highly reflective film (Ag), transparent film: SOG (thickness: about lOOnm), ultra-thin film: RhB
- the fluorescence intensity was increased fourfold (a ⁇ b). This is because, among the fluorescence generated in the ultrathin film, the light directed toward the reflective film is reflected by the reflective film, and incident light transmitted without being absorbed by the ultrathin film is reflected by the reflective film. This is in line with the expectation that the absorption will increase about 4 times.
- the transparent film an ultra-thin film having a thickness of about 100 mm, the fluorescence intensity was increased about 3 times (b ⁇ c;).
- the basic configuration of the reflectance control optical element according to the present invention is effective for enhancing the absorptance as well as controlling the reflectance.
- the present inventor examined the relationship between the fluorescence intensity and the thickness of the transparent film (material: SOG, refractive index: ⁇ 1.4). As shown in FIG. 16, the fluorescence intensity reached its maximum when the thickness of the transparent film was about 100 °, and the fluorescence intensity decreased even when the thickness was increased or decreased at the maximum of 100 °.
- Substrate Light scattering reflection film substrate, transparent film: SOG (thickness: about lOOnm), ultra-thin film: RhB
- Light scattering reflection film uses DC sputtering method, and the silver thin film being deposited is strong on the glass substrate. It was produced under the conditions of plasma irradiation. Even if the substrate is not intentionally heated, it is naturally heated to 50 to 100 ° C. by plasma irradiation during film formation. Note that if excessive heating is used at this time, the surface roughness becomes excessive, so care must be taken.
- FIG. 17 shows the results of measuring the surface roughness of the light-scattering / reflecting film and the surface roughness of the SOG film (transparent film) having a thickness of lOOnm with a stylus-type roughness meter for Ag-SS.
- Fig. 18 shows the same measurement results for Ag-S. The following can be understood from the result of the roughness measurement.
- the height difference of the light scattering reflection film is almost the same as the thickness of the transparent film. • In the Ag-S sample, the height difference of the light scattering reflection film is about 20% of the thickness of the transparent film.
- the surface roughness of the transparent film is not much different from the surface roughness of the light-scattering / reflecting film.
- FIG. 19 and FIG. 20 show the specular reflection spectrum (left) and the scattering spectrum (right) with and without the transparent film for Ag-SS and Ag-S. From these graphs, it can be understood that the presence of the transparent film significantly changes the reflection characteristics.
- Ag-SS Fig. 19
- the regular reflectance is reduced by 10 to 30% due to the presence of the transparent film, while the scattering reflectance is hardly changed. This means that the amount of light whose regular reflectance has been reduced is trapped inside the transparent film.
- FIG. 21 shows the fluorescence intensity of sample d (Ag-S) together with the fluorescence intensity of samples a to c.
- the maximum fluorescence intensity of Ag-SS was ⁇ 700, and as expected, the enhancement effect was reduced compared to Ag-S.
- the reflectance control optical element according to the present invention can be applied immediately to high-density ROM recording because the reflectance varies greatly depending on the presence or absence of an ultrathin film.
- a large change in reflectance means that the intensity of the reproduction light can be lowered.
- this reflectance does not change much even if the angle of incident light is tilted to about 40 °. That is, even if the recording medium is slightly inclined with respect to the incident light, the reflectance is almost Since there is no influence, it is possible to greatly simplify the medium tilt control mechanism in the regenerator.
- the reflectance is 80% within the range of the thickness of the transparent film of 180 ⁇ 20 nm, and the thickness of the transparent film If is in the range of 100 ⁇ 20 nm, the reflectance is 10% or less. This means that even if irregularities are created with rough accuracy with an error of about ⁇ 20 nm, it is sufficiently practical.
- the thickness of the ultrathin film does not need to be so strict, but it may be about 5 to 10 nm. Of course, the thickness of the transparent film and the like may be appropriately adjusted according to the wavelength of the incident light.
- An element whose reflectance changes greatly within a relatively narrow wavelength range (such as the element shown in Fig. 5) has a small energy loss and can be used as a reflective multiband pass optical filter. Moreover, you may use together with another optical filter according to the objective.
- the reflectance control optical element according to the present invention it is possible to obtain an interference fringe with excellent resolution, high definition, and thus a holographic recording medium suitable for a multiplex digital hologram is obtained. be able to.
- the thickness of the ultrathin film should be 20 nm or less, preferably lOnm or less.
- Figure 23 shows a scanning electron microscope image of the interference pattern produced by interfering two separated pulse lasers at the position where a Pt ultrathin film with a thickness of about 5 nm exists. A stripe pattern is observed in which the agglomerated and alternating portions are alternately repeated. It can be seen that the boundary between the two points is sharp enough and can have a spatial resolution of up to 0.1 ⁇ m. Such a high spatial resolution can be obtained because a platinum-based metal is used as a material.
- Figure 24 shows an optical micrograph of the same pulsed laser irradiation on a 20 nm thick Pt ultrathin film. Patterns are shattered everywhere!
- the ultra-thin platinum film is irradiated with a 532 pulse laser.
- an interference pattern of about 1000 lines / mm was recorded, and the first-order diffraction efficiency was obtained.
- Figure 25 shows a graph showing the relationship of the first-order diffraction efficiency (vertical axis).
- the first-order diffraction efficiency increased as the ultrathin film thickness increased.
- the first-order diffraction efficiency increases to about 8% in the element with the lowest reflectivity, and continues to increase in the region where the reflectivity increases and the reflection prevention effect is lost, and the first-order diffraction efficiency exceeds 21% at the maximum. Efficiency was obtained.
- the enhancement of the first-order diffraction efficiency is caused by the phase of reflected diffraction light from the location where the ultrathin film exists! / (Where A is assumed) and the location where the ultrathin film is substantially removed (assumed as B). ) Diffraction of enhanced electric field force Phase force of light It is thought to be caused by strengthening each other in the first-order diffraction direction. In order to achieve this relationship, the phase of the complex reflection coefficient at location A should be approximately 180 degrees different from that of B.
- the thickness of the ultrathin film is appropriately set in the reflectance control optical element according to the present invention, a high diffraction efficiency of about 10% is obtained while maintaining a high spatial resolution during recording of the interference pattern. be able to. With a normal configuration, the diffraction efficiency is about 2% at most, so it can be seen that this increase in diffraction efficiency is very significant. As the thickness of the ultrathin film increases, it becomes increasingly difficult to maintain the spatial resolution of the interference pattern. The power diffraction efficiency further increases. For use for purposes such as displays, personal ID cards, diffraction gratings, and spectroscopy, holographic recording media with a very high diffraction efficiency of 20% are not required because of the high resolution. You can also get
- the ultrathin film light absorption enhancing element according to the present invention is extremely thick. Since it is thin and has an ultra-thin film having high light absorption, it can be immediately applied as an efficient optical functional device such as a solar cell.
- the reflectance control optical element according to the present invention and its application have been described with examples, but it is needless to say that the use thereof is not limited to the above-described one, and it is possible to control the change in reflectance. It is possible to freely improve and change within the spirit of a simple element.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007502600A JP4565197B2 (ja) | 2005-02-09 | 2006-02-07 | 反射率制御光学素子及び超薄膜光吸収増強素子 |
DE112006000344T DE112006000344T5 (de) | 2005-02-09 | 2006-02-07 | Reflektanzkontroll-Optikelement und Ultradünnfilm-Licht-Absorptionsverbesserungselement |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-033358 | 2005-02-09 | ||
JP2005033358 | 2005-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006085515A1 true WO2006085515A1 (ja) | 2006-08-17 |
Family
ID=36793087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/302029 WO2006085515A1 (ja) | 2005-02-09 | 2006-02-07 | 反射率制御光学素子及び超薄膜光吸収増強素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080007852A1 (ja) |
JP (1) | JP4565197B2 (ja) |
DE (1) | DE112006000344T5 (ja) |
WO (1) | WO2006085515A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086236A1 (ja) * | 2010-12-22 | 2012-06-28 | 国立大学法人京都大学 | 光増強素子 |
WO2013061881A1 (ja) | 2011-10-26 | 2013-05-02 | 住友化学株式会社 | 光電変換素子 |
US9257662B2 (en) | 2011-10-03 | 2016-02-09 | Sumitomo Chemical Company, Limited | Quantum dot light-emitting device |
US9263630B2 (en) | 2012-03-27 | 2016-02-16 | Sumitomo Chemical Company, Limited | Inorganic layer light-emitting device |
US9693424B2 (en) | 2011-03-31 | 2017-06-27 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US9693423B2 (en) | 2011-03-31 | 2017-06-27 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US9696462B2 (en) | 2011-03-31 | 2017-07-04 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
WO2017135430A1 (ja) * | 2016-02-03 | 2017-08-10 | 国立大学法人大阪大学 | プラズモニック構造体、カラー生成構造体、及び記録媒体 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080311392A1 (en) * | 2007-06-12 | 2008-12-18 | Ming Scientific, Llc | Thermal barrier |
FR2946639B1 (fr) * | 2009-06-12 | 2011-07-15 | Saint Gobain | Procede de depot de couche mince et produit obtenu. |
MX2012005886A (es) * | 2009-11-27 | 2012-06-19 | Basf Se | Composicion de revestimiento para elementos de seguridad y hologramas. |
WO2011099968A1 (en) * | 2010-02-11 | 2011-08-18 | Hewlett-Packard Development Company, L.P. | Plasmonic element with waveguide trapping |
KR101198476B1 (ko) * | 2010-08-31 | 2012-11-06 | 연세대학교 산학협력단 | 나노 구조 기반의 초고해상도 영상 방법 및 장치 |
US9455093B2 (en) | 2012-05-14 | 2016-09-27 | The Hong Kong Polytechnic University | Dye-sensitized solar cell based on indirect charge transfer |
JP6293138B2 (ja) * | 2013-06-17 | 2018-03-14 | 株式会社カネカ | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121156A (ja) * | 1981-12-31 | 1983-07-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 光学的記憶媒体 |
JPH01178144A (ja) * | 1988-01-06 | 1989-07-14 | Toa Nenryo Kogyo Kk | 情報記録媒体およびその製造方法 |
JPH0241288A (ja) * | 1988-08-01 | 1990-02-09 | Matsushita Electric Ind Co Ltd | 光記録媒体及び光記録方法 |
JPH10261244A (ja) * | 1997-03-17 | 1998-09-29 | Ricoh Co Ltd | 微粒子の規則的配列方法および光記録媒体 |
JP2001331972A (ja) * | 2000-05-16 | 2001-11-30 | Ricoh Co Ltd | 光情報記録媒体 |
JP2002279690A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 相変化記録媒体、記録装置、及び記録方法 |
JP2003077181A (ja) * | 2001-08-31 | 2003-03-14 | Sony Corp | 光ディスク |
JP2003157575A (ja) * | 2001-11-22 | 2003-05-30 | Sharp Corp | 光ディスク及び光ディスク記録再生装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4329697A (en) * | 1977-03-28 | 1982-05-11 | Rca Corporation | Information record |
US5188923A (en) * | 1981-12-31 | 1993-02-23 | International Business Machines Corporation | Optical storage media with discontinuous thin metallic films |
-
2006
- 2006-02-07 WO PCT/JP2006/302029 patent/WO2006085515A1/ja not_active Application Discontinuation
- 2006-02-07 US US11/883,530 patent/US20080007852A1/en not_active Abandoned
- 2006-02-07 JP JP2007502600A patent/JP4565197B2/ja active Active
- 2006-02-07 DE DE112006000344T patent/DE112006000344T5/de not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121156A (ja) * | 1981-12-31 | 1983-07-19 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 光学的記憶媒体 |
JPH01178144A (ja) * | 1988-01-06 | 1989-07-14 | Toa Nenryo Kogyo Kk | 情報記録媒体およびその製造方法 |
JPH0241288A (ja) * | 1988-08-01 | 1990-02-09 | Matsushita Electric Ind Co Ltd | 光記録媒体及び光記録方法 |
JPH10261244A (ja) * | 1997-03-17 | 1998-09-29 | Ricoh Co Ltd | 微粒子の規則的配列方法および光記録媒体 |
JP2001331972A (ja) * | 2000-05-16 | 2001-11-30 | Ricoh Co Ltd | 光情報記録媒体 |
JP2002279690A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 相変化記録媒体、記録装置、及び記録方法 |
JP2003077181A (ja) * | 2001-08-31 | 2003-03-14 | Sony Corp | 光ディスク |
JP2003157575A (ja) * | 2001-11-22 | 2003-05-30 | Sharp Corp | 光ディスク及び光ディスク記録再生装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012086236A1 (ja) * | 2010-12-22 | 2012-06-28 | 国立大学法人京都大学 | 光増強素子 |
JP2012132804A (ja) * | 2010-12-22 | 2012-07-12 | Kyoto Univ | 光増強素子 |
US9693424B2 (en) | 2011-03-31 | 2017-06-27 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US9693423B2 (en) | 2011-03-31 | 2017-06-27 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US9696462B2 (en) | 2011-03-31 | 2017-07-04 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US10379267B2 (en) | 2011-03-31 | 2019-08-13 | Sumitomo Chemical Company, Limited | Metal-based particle assembly |
US9257662B2 (en) | 2011-10-03 | 2016-02-09 | Sumitomo Chemical Company, Limited | Quantum dot light-emitting device |
WO2013061881A1 (ja) | 2011-10-26 | 2013-05-02 | 住友化学株式会社 | 光電変換素子 |
US9263630B2 (en) | 2012-03-27 | 2016-02-16 | Sumitomo Chemical Company, Limited | Inorganic layer light-emitting device |
WO2017135430A1 (ja) * | 2016-02-03 | 2017-08-10 | 国立大学法人大阪大学 | プラズモニック構造体、カラー生成構造体、及び記録媒体 |
JPWO2017135430A1 (ja) * | 2016-02-03 | 2018-06-28 | 国立大学法人大阪大学 | プラズモニック構造体、カラー生成構造体、及び記録媒体 |
Also Published As
Publication number | Publication date |
---|---|
JP4565197B2 (ja) | 2010-10-20 |
DE112006000344T5 (de) | 2007-12-27 |
US20080007852A1 (en) | 2008-01-10 |
JPWO2006085515A1 (ja) | 2008-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4565197B2 (ja) | 反射率制御光学素子及び超薄膜光吸収増強素子 | |
Ji et al. | Engineering light at the nanoscale: structural color filters and broadband perfect absorbers | |
JP4582755B2 (ja) | 光記録/再生方法および光記録媒体 | |
Chon et al. | Nanoplasmonics: advanced device applications | |
TWI247301B (en) | Recording media with super-resolution near-field structure, reproducing method and reproducing device therefor | |
CN101271274A (zh) | 微小结构和信息记录介质 | |
JP2008290227A (ja) | 微小構造体 | |
US7345980B2 (en) | Optically storing digital data in the form of spectrally coded particles | |
JP2010020849A5 (ja) | ||
JP2002074666A (ja) | 光ディスクの記録密度と容量を増大する方法 | |
US20070098946A1 (en) | Optical recording disc | |
CN102414749A (zh) | 包含基本惰性的低熔化温度数据层的光学数据存储介质 | |
JP2006172613A (ja) | プラズモンを用いた光記録再生方法及び光記録媒体 | |
TWI398865B (zh) | 具有奈米粒的二或以上儲存層之光學儲存媒體 | |
JP2006511014A (ja) | 光記憶用新材料としての2層光転写レジストの利用 | |
TWI297152B (en) | A limited-readout optical storage disk by using surface plasmon effects | |
CN1273976C (zh) | 氧化铂作掩膜的只读超分辨光盘 | |
JP4389052B2 (ja) | 近接場光メモリヘッド | |
JP4331060B2 (ja) | 有機薄膜とその製造方法、該薄膜を用いた光記録媒体及び記録再生方法 | |
CN2751406Y (zh) | 氧化铂作掩膜的只读超分辨光盘 | |
JP2007226955A5 (ja) | ||
JP4134110B2 (ja) | 光記録媒体 | |
JP4366625B2 (ja) | 記憶部材 | |
US20100195468A1 (en) | Optical data storage media containing metal and metal oxide dark layer structure | |
JP2006099887A (ja) | 光記録媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPE2 | Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007502600 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11883530 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120060003445 Country of ref document: DE |
|
RET | De translation (de og part 6b) |
Ref document number: 112006000344 Country of ref document: DE Date of ref document: 20071227 Kind code of ref document: P |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06713172 Country of ref document: EP Kind code of ref document: A1 |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 6713172 Country of ref document: EP |