WO2006083520A2 - Procede de separation de moule depuis une couche solidifiee etablie sur un substrat - Google Patents

Procede de separation de moule depuis une couche solidifiee etablie sur un substrat Download PDF

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Publication number
WO2006083520A2
WO2006083520A2 PCT/US2006/001160 US2006001160W WO2006083520A2 WO 2006083520 A2 WO2006083520 A2 WO 2006083520A2 US 2006001160 W US2006001160 W US 2006001160W WO 2006083520 A2 WO2006083520 A2 WO 2006083520A2
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WO
WIPO (PCT)
Prior art keywords
substrate
template
recited
regions
force
Prior art date
Application number
PCT/US2006/001160
Other languages
English (en)
Other versions
WO2006083520A3 (fr
Inventor
Byung-Jin Choi
Anshuman Cherala
Yeong-Jun Choi
Mario J. Meissl
Sidlgata V. Sreenivasan
Norman E. Schumaker
Xiaoming Lu
Ian M. Mcmackin
Daniel A. Babbs
Original Assignee
Molecular Imprints, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/047,428 external-priority patent/US7798801B2/en
Priority claimed from US11/047,499 external-priority patent/US7636999B2/en
Application filed by Molecular Imprints, Inc. filed Critical Molecular Imprints, Inc.
Priority to JP2007553123A priority Critical patent/JP5247153B2/ja
Priority to KR1020077019969A priority patent/KR101254042B1/ko
Publication of WO2006083520A2 publication Critical patent/WO2006083520A2/fr
Publication of WO2006083520A3 publication Critical patent/WO2006083520A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005—Vacuum work holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces

Definitions

  • the field of the invention relates generally to nano- fabrication of structures . More particularly, the present invention is directed to a method of separating a template from a solidified layer disposed on a substrate in an imprint lithography process .
  • Nano-fabrication involves the fabrication of very small structures , e .g . , having features on the order of nano-meters or smaller .
  • One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits .
  • nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
  • Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like .
  • An exemplary nano-fabrication technique is commonly referred to as imprint lithography .
  • Exemplary imprint lithographic processes are described in detail in numerous publications , such as United States published patent application 2004/0065976 filed as United States patent application 10/264 , 960 , entitled, "Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability" ,- United States published patent application 2004/0065252 filed as United States patent application 10/264 , 926 , entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards” ; and United States published patent application 2004/0046271 filed as United States patent application 10/235 , 314 , entitled “Functional Patterning Material for Imprint Lithography Processes , " all of which are assigned to the assignee of the present invention.
  • the fundamental imprint lithography technique disclosed in each of the aforementioned United States published patent applications includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate .
  • a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate and in contact therewith.
  • the liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid .
  • the template is separated from the solidified layer such that the template and the substrate are spaced-apart .
  • the substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer .
  • the recorded pattern may be damaged.
  • the present invention is directed towards a method of separating a mold, included in a template , from a layer disposed on a substrate .
  • the method includes , inter alia, applying a separation force to the template to separate the template from the layer, and facilitating localized deformation in the substrate to reduce the magnitude of separation force required to achieve separation. It is believed that , by reducing the separation forces , damage to the recorded layer may be minimized.
  • Fig . 1 is a cross-sectional view of a template in contact • with an imprinting layer, and undergoing separation therefrom in accordance with the prior art;
  • Fig . 2 is a cross-sectional view of a template undergoing separation from an imprinting layer, disposed upon a substrate, in accordance with one embodiment of the present invention
  • Fig . 3 is a cross-sectional view of a template undergoing separation from an imprinting layer, disposed upon a substrate , in accordance with a second embodiment of the present invention
  • Fig. 4 is a cross-sectional view of a template mounted to a template holder in accordance with the present invention
  • Fig . 5 is a top down view of a wafer chuck demonstrating a first embodiment of differing vacuum sections that may be provided in accordance with the present invention
  • Fig . 6 is a top down view of a wafer chuck demonstrating a second embodiment of differing vacuum sections that may be provided in accordance with the present invention
  • Fig . 7 is a top down view of a wafer chuck demonstrating a third embodiment of differing vacuum sections that may be provided in accordance with the present invention
  • Fig . 8 is a side view of the wafer chuck and substrate shown in Fig. 3 being subject to a release scheme in accordance with an alternate embodiment
  • Fig . 9 is a top down view of one embodiment of the wafer chuck shown in Fig . 2 ;
  • Fig . 10 is a cross-sectional view of the wafer chuck shown in Fig . 9 taken along lines 10-10 ;
  • FIG. 11 is a cross-sectional view of a wafer chuck shown in Fig. 10 having a substrate disposed thereon;
  • Fig . 12 is a cross-sectional view of a second embodiment of the wafer chuck, shown in Fig. 2 , having a substrate disposed thereon;
  • Fig . 13 is a cross-sectional view of a template in contact with an imprinting layer, disposed upon a substrate , wherein the substrate is subj ected to a pushing force ;
  • Fig . 14 is a simplified top down plan view showing a template having a plurality of air nozzles arranged locally to exert a pushing force ;
  • Fig. 15 is a simplified top down plan view showing a template having a plurality of air nozzles arranged as an array to exert a pushing force ;
  • Fig . 16 is a simplified top down plan view showing a template having a plurality of trenches disposed therein to facilitate release of air located between a template and an imprinting layer;
  • Fig. 17 is a side view of a template shown in Fig. 16 ;
  • Fig . 18 is a simplified top plan down view showing a template having a plurality of holes disposed therein to facilitate release of air located between a template and an imprinting layer;
  • Fig . 19 is a side down view of the template shown in Fig . 17.
  • a template 10 is shown in contact with an imprinting layer 12.
  • template 10 may be comprised of fused silica and imprinting layer 12 may be formed from any material known in the art .
  • Exemplary compositions for imprinting material 12 are disclosed in United States patent application number 10/763 , 885 , filed January 24 , 2003 , entitled Materials and Methods for Imprint Lithography, which is incorporated by reference .
  • Imprinting layer 12 may be positioned on a substrate 14 , with substrate 14 having a thickness ⁇ t ' associated therewith .
  • Substrate 14 may be formed from virtually any material including silicon, fused silica, metal or compound materials typically associated with the manufacture of integrated circuits .
  • Template 10 comprises a surface 16 having a plurality of features disposed thereon, with the plurality of features comprising a plurality of protrusions 18 and recessions 20.
  • the plurality of protrusions 18 and recessions 20 form a pattern to be transferred into imprinting layer 12 , forming a relief image therein. More specifically, template 10 contacts imprinting layer 12 such that the material of imprinting layer 12 ingresses into and fills the plurality of recessions 20 to form imprinting layer 12 with a contiguous structure across surface 16 of template 10 , wherein typically the atmosphere surrounding template 10 , and imprinting layer 12 may be saturated with a gas , such as helium.
  • Template 10 may be connected to an imprint head 11. The imprint head
  • substrate 14 may be adapted to move along the X- , Y- , and/or Z-axes , thereby generating separation force P s by moving template 10 along the Z-axis away from substrate 14.
  • substrate 14 typically remains in a fixed position with respect to the Z-axis while imprint head 11 undergoes movement .
  • Imprinting layer 12 may be formed from a photo-sensitive material such that when exposed to an actinic component , the same is polymerized and cross-linked to form a solidified material .
  • the actinic component may include ultraviolet wavelengths, thermal energy, electromagnetic energy, visible light and the like .
  • the actinic component employed is known to one skilled in the art and typically depends on the material from which imprinting layer 12 is formed .
  • Wafer chuck 22 may retain substrate 14 during separation using any number of well known straining forces , F c , e . g. , electrostatic forces , magnetic forces, vacuum forces and the like . As a result, the direction of separation force F 3 is typically opposite to that of the direction of the straining force F c .
  • wafer chuck 22 is supported by a stage 23 that facilitates movement along X, Y and/or Z axes .
  • An exemplary imprint lithography system is sold under the tradename IMPRIOTM 100 available from Molecular Imprints , Inc . of Austin, Texas .
  • a magnitude of the strain (deformation) of substrate 14 is a function of the separation " force F 3 applied and typically results in the formation of strained region 24 in which substrate 14 is spaced from wafer chuck 22 a distance d.
  • Strained region 24 is typically generated proximate to a region of imprinting layer 12 in contact with template 10 , referred to as the processing region.
  • F s the magnitude of the separation force F s necessary to achieve separation of template 10 and solidified imprinting layer 12.
  • minimizing the magnitude of the separation force P 3 facilitates alignment processes so that template 10 and substrate 14 may be properly aligned, as well as allow an increased ratio of template patterning area versus total template area .
  • minimizing the separation force F 3 necessary to achieve separation of template 10 and solidified imprinting layer 12 reduces the probability of structural comprise of template 10 , substrate 14 , and solidified imprinting material 12.
  • deformation of substrate 14 creates potential energy in strained region 24 that is transformed into kinetic energy upon separation of template 10 from solidified imprinting layer 12.
  • the separation force F s upon substrate 14 approaches zero .
  • the straining force F c and the elasticity of the material from which substrate 14 is formed causes strained region 24 to accelerate toward chuck 22 , such that strained region 24 typically collides with wafer chuck 22.
  • the present invention attenuates , if not prevents , the aforementioned deleterious effects associated with separation of template 10 from solidified imprinting layer 12. This is achieved by reducing, for a given substrate 14 , template 10 , and solidified imprinting layer 12 , the magnitude of the separation force F 3 necessary to achieve separation between template 10 and solidified imprinting layer 12.
  • wafer chuck 122 is configured to control a magnitude of the strain (deformation) to which substrate 14 is subj ected, particularly during separation.
  • Wafer chuck 122 generates a straining force F 0 from a plurality of independently generated forces F 1 and F 2 .
  • This facilitates providing a straining force F c that may vary in direction and magnitude across substrate 14.
  • the magnitude of variable forces F 2 may be substantially less than the magnitude of chucking forces F 1 .
  • chucking forces F 1 may be associated with a non-strained region 26 of substrate 14
  • variable forces F 2 may be associated with strained region 24 of substrate 14.
  • forces F 1 and F 2 are both along directions substantially opposite to the direction of the separation force F 3 .
  • Separation force F s may be generated by movement of an imprinting head 11 to which template is connected, as discussed above with respect to Fig . 1.
  • wafer chuck 122 shown in Fig . 2 , may be supported by a stage 23 , as discussed above with respect to Fig . 1.
  • separation force F s may be generated by keeping the position of template 10 fixed with respect to the Z-axis and moving substrate 14 along the Z-axis away from template 10 employing stage 23.
  • the separation force FS may result from the combination of moving template 10 and substrate 14 in opposite directions along the Z axis .
  • the invention is discussed with respect to moving imprint head 11 so that template 10 moves along the
  • variable forces F 1 and F 2 may have virtually any value desired, so long as portions of substrate 14 outside of strained region 24 is retained upon wafer chuck 122 when the same is subj ected to separation force F 3 .
  • variable forces F 2 may have a magnitude approaching zero .
  • the magnitude of variable forces F 2 being substantially less than the magnitude of chucking forces F 1 , the magnitude of the separation force F 3 required to separate template 10 from solidified imprinting layer 12 may be reduced .
  • the magnitude of variable forces F 2 are established to facilitate strain (deformation) of a portion of substrate 14 in superimposition with template 14 in response to separation force F s , referred to as strained region 24.
  • straining force F c may be varied across substrate 14 such that the direction of variable forces F 2 may be opposite to the direction of chucking forces F 1 and commensurate with the direction of separation force F 3 .
  • the magnitude of the variable forces F 2 may be the same, greater or less than a magnitude of chucking forces F 1 .
  • chucking forces F 1 function to hold substrate 14 upon wafer chuck 122 when subj ected to separation force F s .
  • the magnitude of the separation forces F 3 required to separate template 10 from solidified imprinting layer 12 may be reduced .
  • variable forces F 2 may reduce the impact, if not avoid collision, of strained region 24 with template 10. More specifically, second variable forces F 2 reduce the velocity, and thus , the kinetic energy of strained region 24 as the same propagates towards wafer chuck 122 , after separation of template 10 from solidified imprinting layer 12. In this manner, strained region 24 comes to rest against wafer chuck 122 without unduly compromising the structural integrity of the same .
  • variable forces F 2 may be changed.
  • variable forces F 2 may be provided to have the same magnitude and direction as chucking forces F 1 .
  • variable forces F 2 may vary linearly during a period of time such that the magnitude of variable forces F 2 having a direction opposite to chucking forces F 1 approaches zero .
  • Upon reaching zero variable forces F 2 change direction and are slowly increased to be commensurate with the magnitude and direction of chucking forces F 1 .
  • substrate 14 may be subj ected to a gradient of variable forces F 2 that slowly decelerate strained region 24 and gradually increase to fixedly secure substrate 14 to wafer chuck 122. Therefore , an abrupt deceleration of substrate 14 in response to contact with wafer chuck 122 , i . e . , a collision, may be avoided while minimizing the force of impact with wafer chuck 122.
  • the direction of the variable forces F 2 may be substantially the opposite as the direction of separation force F 3 , as described above with respect to Fig . 2. However, upon separation of template 10 from solidified imprinting layer 12 , the direction of variable forces F 2 may be substantially the same as the direction of separation force F 3 , as described above with respect to Fig . 3. [0041] Referring to Figs . 1 and 4 , to further facilitate the separation of template 10 from imprinting layer 12 , template 10 may be subjected to a bowing force F B .
  • bowing force F B may be applied along a center region 28 of template 10 and along a direction opposite to that of the direction of the separation force F s , shown in Fig . 1.
  • the bowing force F B may be applied in conjunction with, or independent of , varying the magnitude and the direction of the straining forces F c , as discussed above .
  • template 10 may be attached to a template chuck as disclosed in United States patent application number 10/999 , 898 , filed November 30 , 2004 , assigned to the assignee of the present patent application and having Cherala et al . identified as inventors , which is incorporated by reference herein.
  • the template chuck includes a body 31 having a centralized throughway 33 , one side of which is sealed by a fused silicate plate 35 and a gasket 36. Surrounding throughway 33 is a recess 37 and gaskets 38. Properly positioning template 10 upon body 31 seals throughway 33 forming a chamber, as well as sealing of recess forming a second chamber surrounding the centralized chamber .
  • the centralized chamber and the second chamber may each be provided with a desired pressurization vis-a-vis passageways 40 and 41 , respectively. By evacuating the second chamber and pressurizing the central chamber, bowing force F B may be applied to template 10 without removing the same from body 31.
  • wafer chuck 122 may be employed to vary the magnitude and the direction of the straining force F c across substrate 14 .
  • the following embodiments may be employed in step and repeat processes , wherein an exemplary step and repeat process is disclosed in United States published patent application number 2004/0008334 filed as United patent application number 10/194 , 414 , assigned to assignee of the present invention and incorporated herein by reference .
  • wafer chuck 122 may be configured to provide a plurality of discrete vacuum sections 30 A -30 z .
  • each of the plurality of vacuum sections 30 A -30 z is defined as providing one or more chucking forces of common magnitude and direction.
  • straining force, F c there may be one straining force, F c , associated with, one of discrete vacuum sections 30 A -30 z or multiple chucking forces , each of which are substantially identical in direction and magnitude .
  • the number, size and shape of vacuum sections 30 A -30 z may vary dependent upon several factors .
  • any one of the plurality of vacuum sections 30 A -30 z may differ from the remaining vacuum sections of the plurality of vacuum sections 30 A -30 z .
  • the size and/or shape of one or more of the vacuum sections may be commensurate with the size and/or shape of the region 24.
  • each of the plurality of vacuum sections 30 A -30 z may be provided with one of a number of shapes , including any polygonal shape, such as the square shape as shown, as well as circular shapes shown as 130 or annular shapes shown as 230 , in Fig . 6.
  • vacuum sections may include any one or more of irregular shapes 330 , shown in Fig . 7.
  • each of the plurality of vacuum sections defined on a common wafer chuck 122 may have a common shape and size, it is not necessary.
  • wafer chuck 222 may define irregular vacuum sections 330 , along with a hexagonal vacuum section 430 , a rectangular vacuum section 530 , a circular vacuum section 130 , and an annular vacuum section 230.
  • each of the plurality of vacuum sections 30 A -30 z may be individually addressed so that differing chucking forces may be associated with the plurality of vacuum sections 30 A -30 z .
  • the locus of the desired chucking forces e .g . , F 1 and/or F 2
  • F c the straining forces associated with the plurality of vacuum sections 30 A -30 z so that substrate 14 may be along an axis that extends across the entire area of substrate 14.
  • adj acent rows of said plurality of vacuum sections 30 A -30 z define a straining force differential ⁇ F C .
  • vacuum sections 30 D , 3O 1 , 3O 0 , 3 O n , 30 z , 3Oj, 30 P , 30 v may generate variable force F 2 , that is lower than chucking force F 1 , generated by the remaining vacuum sections , 30 A , 30 B , 30 c , 30 E , 30 P , 30 G/ 30 H , 30 K , 30 L , 30 M , 3 O N , 30 Q , 30 R , 30 S , 30 T , 30 W , 3 O X , and 30 Y .
  • wafer chuck 122 and 222 are integrally formed from stainless steel or aluminum with a plurality of spaced-apart pins 32 and 33 , defining a plurality of channels 36 therebetween.
  • each, of the plurality of pins 32 and 33 may have virtually any cross-sectional shape desired, including polygonal shapes and typically have a pitch of 3 millimeters .
  • One or more of the plurality of pins are hollow defining a throughway 34 that extends from a passageway 35 , terminating in an opening facing substrate 14 , as shown in Fig . 11. These are shown as pins 32 , with throughway typically having a diameter of approximately 1 millimeter to prevent bowing of the portion of substrate 124 in superimposition therewith.
  • each of pins 32 is shown in fluid communication with a common passageway 35 , this is not necessary.
  • throughway 34 of each of the plurality of pins 32 may be individually addressable such that the volume and direction of fluid passing therethrough per unit time is independent of the fluid flow through throughways 34 associated with the remaining pins 32. This may be achieved by placing one or more of pins 32 in fluid communication with a passageway that differs from the passageways in fluid communication with the remaining pins 32.
  • throughways 34 may comprise a stepped structure .
  • the plurality of pins 34 may be surrounded by a land 37 upon which substrate 14 rests .
  • Channels 36 are typically in fluid communication with a common passageway 39 via aperture 40.
  • substrate 14 is retained on wafer chuck 122 by straining force F c generated by fluid flow through channels 36 and/or throughways 34.
  • passageway 35 is in fluid communication with a pressure control system 41 and passageway 39 is in fluid communication with a pressure control system 43.
  • Both of pressure control systems 41 and 43 are operated under control of processor 45 that is in data communication therewith.
  • processor may include computer readable code operated on by the processor to carrying out the fluid flows mentioned with respect to Figs . 2 -11.
  • separation force F 3 Upon application of separation force F 3 , a portion of surface 47 in superimposition with solidified imprinting layer 12 becomes separated from pins 32 and/or 33. To facilitate this separation by reducing a magnitude of separation force F 3 required to achieve the same, pins 32 are disposed throughout the area of wafer chuck 122. The fluid flowing through throughways 34 is selected so that variable force F 2 is less than chucking force F 1 . Typically, chucking force F 1 is generated by operating pressure control system 43 at full vacuum. When variable force F 2 is operated in a pressure state , it is of sufficient magnitude to generate a pressure of approximately 200 kilo Pascals (kPa) in the volume disposed between strained region 24 and wafer chuck 122.
  • kPa kilo Pascals
  • wafer chuck 322 may provide the aforementioned vacuum characteristics , without use of pins 32 and 33.
  • a surface 49 of wafer chuck 322 includes a plurality of apertures 50 and 52 that may be configured to have a flow of fluid therethrough, the magnitude and direction of which may be independent of the flow of fluid through the remaining apertures 50 and 52.
  • Apertures typically have a 3 millimeter pitch and a diameter of 2 millimeters , sufficient to reduce the probability of bowing of the portion of substrate 14 in superimposition therewith.
  • apertures 50 are in fluid communication with a common passageway 53 and apertures 52 are in fluid communication with a common passageway 55.
  • the straining force F c generated by fluid flows through one or more of the plurality of spaced-apart apertures 50 and 52.
  • the portion of the plurality of spaced-apart apertures 50 and 52 may have fluid passing therethrough at a first flow rate, 0 seem or greater .
  • fluid may pass through apertures 50 and 52 at a flow rate that differs from the first flow rate .
  • the flow rate of fluid passing through apertures 50 and 52 may vary in response to the presence of separation force F 8 .
  • the aforementioned change in flow rate is localized to apertures 50 and 52 in superimposition with strained region 24.
  • the change in flow rate is typically sufficient to reduce the magnitude of the straining force F c .
  • the change in flow rate typically affects the fluid passing though only one of apertures 52 or apertures 50.
  • the imprinting layer may be composed of material that produces a gaseous by-product when exposed to predetermined wavelengths as disclosed in United States patent number 6 , 218 , 316 which is incorporated by reference herein.
  • the gaseous by-product can produce localized pressure at the interface between imprinting layer 12 and mold the flat surface . The localized pressure can facilitate separation of template 10 from imprinting layer 12.
  • the wavelength of radiation that facilitates generation of the gaseous by-product may include such wavelengths as 157 nm, 248 nm, 257 nm and 308 nm, or a combination thereof .
  • the gaseous by-product located between template 10 and imprinting layer 12 may leak out from between template 10 and imprinting layer 12 , which is undesirable .
  • the separation of template 10 from imprinting layer 12 should be orthogonal to imprinting layer 12 to minimize distortions of the imprinting layer 12.
  • a pushing force F p may be employed between template 10 and substrate 14.
  • the pushing force F p may be applied proximate to substrate 14 in areas of substrate 14 not in superimposition with template 10.
  • the pushing force F p facilitates in separation of template 10 by moving substrate 14 away from template 10.
  • pushing force F P is directed along a direction opposite to separation force F 3 ; thereby the magnitude of the separation force F s required to achieve separation may be reduced.
  • the pushing force F p may be applied by a plurality of air nozzles 62 arranged locally, as shown in Pig . 14 , or as an array 162 , as shown in Fig. 15.
  • the gas employed within the plurality of air nozzles includes , but is not limited to, nitrogen (N 2 ) .
  • the pushing force F p may be applied independent or in conjunction with varying the straining force F c , as discussed above with respect to Figs . 2 -12.
  • template 10 may comprises a plurality of trenches 38 to decrease the vacuum sealing effect between template 10 and imprinting layer 12.
  • Trenches 66 facilitate release of air positioned between template 10 and imprinting layer 12 when template 10 and imprinting layer 12 are in contact, thus decreasing the vacuum sealing effect between template 10 and imprinting layer 12.
  • template 10 may comprise a plurality of holes 68 , wherein the plurality of holes 68 function analogously to trenches 66 , such that holes 68 function to decrease the vacuum sealing effect between template 10 and imprinting layer 12.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Procédé de séparation de moule, incorporé à un gabarit, depuis une couche établie sur un substrat : entre autres étapes, application de force de séparation au gabarit pour le séparer de la couche, et action visant à faciliter la déformation localisée dans le substrat pour réduire la force de séparation requise..
PCT/US2006/001160 2005-01-31 2006-01-12 Procede de separation de moule depuis une couche solidifiee etablie sur un substrat WO2006083520A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007553123A JP5247153B2 (ja) 2005-01-31 2006-01-12 基板上に配置された固化層からモールドを分離させる方法
KR1020077019969A KR101254042B1 (ko) 2005-01-31 2006-01-12 기판 위에 배치된 고형화된 층으로부터 주형을 분리하는방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11/047,499 2005-01-31
US11/047,428 US7798801B2 (en) 2005-01-31 2005-01-31 Chucking system for nano-manufacturing
US11/047,499 US7636999B2 (en) 2005-01-31 2005-01-31 Method of retaining a substrate to a wafer chuck
US11/047,428 2005-01-31
US11/108,208 2005-04-18
US11/108,208 US7635445B2 (en) 2005-01-31 2005-04-18 Method of separating a mold from a solidified layer disposed on a substrate

Publications (2)

Publication Number Publication Date
WO2006083520A2 true WO2006083520A2 (fr) 2006-08-10
WO2006083520A3 WO2006083520A3 (fr) 2009-05-14

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Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2006/001151 WO2006083519A2 (fr) 2005-01-31 2006-01-12 Procede de fixation d'un substrat sur un support de tranche
PCT/US2006/001145 WO2006083518A2 (fr) 2005-01-31 2006-01-12 Systeme de mandrin destine a la nano-fabrication
PCT/US2006/001160 WO2006083520A2 (fr) 2005-01-31 2006-01-12 Procede de separation de moule depuis une couche solidifiee etablie sur un substrat

Family Applications Before (2)

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PCT/US2006/001151 WO2006083519A2 (fr) 2005-01-31 2006-01-12 Procede de fixation d'un substrat sur un support de tranche
PCT/US2006/001145 WO2006083518A2 (fr) 2005-01-31 2006-01-12 Systeme de mandrin destine a la nano-fabrication

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EP (1) EP1843884A4 (fr)
KR (1) KR101254042B1 (fr)
TW (2) TWI277504B (fr)
WO (3) WO2006083519A2 (fr)

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WO2015155988A1 (fr) * 2014-04-09 2015-10-15 Canon Kabushiki Kaisha Appareil d'impression et procédé de fabrication d'article
US9272462B2 (en) 2010-03-29 2016-03-01 Fujifilm Corporation Minute convexo-concave pattern forming method and forming device, and transfer substrate producing method and transfer substrate
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JP5069979B2 (ja) * 2007-09-03 2012-11-07 東芝機械株式会社 離型装置、給排システムおよび離型方法
JP4774125B2 (ja) * 2010-10-04 2011-09-14 キヤノン株式会社 転写装置、型、および、デバイス製造方法
JP6659104B2 (ja) * 2014-11-11 2020-03-04 キヤノン株式会社 インプリント方法、インプリント装置、型、および物品の製造方法
JP7284639B2 (ja) 2019-06-07 2023-05-31 キヤノン株式会社 成形装置、および物品製造方法

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US9272462B2 (en) 2010-03-29 2016-03-01 Fujifilm Corporation Minute convexo-concave pattern forming method and forming device, and transfer substrate producing method and transfer substrate
WO2015155988A1 (fr) * 2014-04-09 2015-10-15 Canon Kabushiki Kaisha Appareil d'impression et procédé de fabrication d'article
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US10620532B2 (en) * 2014-11-11 2020-04-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method

Also Published As

Publication number Publication date
WO2006083519A2 (fr) 2006-08-10
TWI277504B (en) 2007-04-01
EP1843884A4 (fr) 2008-12-17
WO2006083518A3 (fr) 2007-03-29
TW200633114A (en) 2006-09-16
EP1843884A2 (fr) 2007-10-17
TW200633846A (en) 2006-10-01
WO2006083520A3 (fr) 2009-05-14
WO2006083519A3 (fr) 2009-04-23
KR20070102723A (ko) 2007-10-19
KR101254042B1 (ko) 2013-04-12
WO2006083518A2 (fr) 2006-08-10
TWI291212B (en) 2007-12-11

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