WO2006083025A1 - Semiconducteur optique, materiau d’etancheite pour celui-ci et composition d’etancheite - Google Patents
Semiconducteur optique, materiau d’etancheite pour celui-ci et composition d’etancheite Download PDFInfo
- Publication number
- WO2006083025A1 WO2006083025A1 PCT/JP2006/302295 JP2006302295W WO2006083025A1 WO 2006083025 A1 WO2006083025 A1 WO 2006083025A1 JP 2006302295 W JP2006302295 W JP 2006302295W WO 2006083025 A1 WO2006083025 A1 WO 2006083025A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- optical semiconductor
- carbon atoms
- composition
- branched
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Polymers (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
L'invention décrit une composition destinée à l’encapsulation de semiconducteur optique contenant un polyorganosiloxane (A), de 100 à 1 000 parties en poids d’un composé époxy aliphatique ou alicyclique (B) pour 100 parties en poids du polyorganosiloxane (A) et un durcisseur anhydre à base d’acide carboxylique (C). La composition peut en outre contenir un accélérateur de durcissement (D). La composition destinée à l’encapsulation de semiconducteur optique est utile en tant que composant principal pour des matériaux d’étanchéité de semiconducteurs optiques qui peuvent être utilisés pour l’enrobage et permet de former un matériau d’étanchéité de semiconducteur optique qui est excellent de par sa transparence, sa résistance aux UV, sa résistance à la chaleur et sa résistance aux fissures pendant le cycle de fusion et de traitement thermique.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-029398 | 2005-02-04 | ||
JP2005029398 | 2005-02-04 | ||
JP2005296471 | 2005-10-11 | ||
JP2005-296471 | 2005-10-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006083025A1 true WO2006083025A1 (fr) | 2006-08-10 |
Family
ID=36777386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/302295 WO2006083025A1 (fr) | 2005-02-04 | 2006-02-03 | Semiconducteur optique, materiau d’etancheite pour celui-ci et composition d’etancheite |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200711060A (fr) |
WO (1) | WO2006083025A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008019422A (ja) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
JP2009001752A (ja) * | 2007-06-25 | 2009-01-08 | Nitto Denko Corp | 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置 |
JP2009091438A (ja) * | 2007-10-05 | 2009-04-30 | Nitto Denko Corp | 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置 |
WO2011155583A1 (fr) * | 2010-06-11 | 2011-12-15 | 日本化薬株式会社 | Composition de résine durcissable et produit durci obtenu |
KR101390087B1 (ko) | 2006-06-16 | 2014-04-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 에폭시ㆍ실리콘 혼성 수지 조성물 및 발광 반도체 장치 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100126295A (ko) * | 2008-01-08 | 2010-12-01 | 다우 코닝 도레이 캄파니 리미티드 | 실세스퀴옥산 수지 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05287172A (ja) * | 1992-04-03 | 1993-11-02 | Nippon Kayaku Co Ltd | エポキシ樹脂組成物 |
JPH0725987A (ja) * | 1993-07-14 | 1995-01-27 | Nitto Denko Corp | 光半導体封止用エポキシ樹脂組成物 |
JPH11209579A (ja) * | 1998-01-26 | 1999-08-03 | Matsushita Electric Works Ltd | 封止用のエポキシ樹脂組成物および樹脂封止型光半導体装置 |
-
2006
- 2006-02-03 TW TW095103803A patent/TW200711060A/zh unknown
- 2006-02-03 WO PCT/JP2006/302295 patent/WO2006083025A1/fr not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05287172A (ja) * | 1992-04-03 | 1993-11-02 | Nippon Kayaku Co Ltd | エポキシ樹脂組成物 |
JPH0725987A (ja) * | 1993-07-14 | 1995-01-27 | Nitto Denko Corp | 光半導体封止用エポキシ樹脂組成物 |
JPH11209579A (ja) * | 1998-01-26 | 1999-08-03 | Matsushita Electric Works Ltd | 封止用のエポキシ樹脂組成物および樹脂封止型光半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008019422A (ja) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
KR101390087B1 (ko) | 2006-06-16 | 2014-04-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 에폭시ㆍ실리콘 혼성 수지 조성물 및 발광 반도체 장치 |
JP2009001752A (ja) * | 2007-06-25 | 2009-01-08 | Nitto Denko Corp | 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置 |
JP2009091438A (ja) * | 2007-10-05 | 2009-04-30 | Nitto Denko Corp | 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置 |
WO2011155583A1 (fr) * | 2010-06-11 | 2011-12-15 | 日本化薬株式会社 | Composition de résine durcissable et produit durci obtenu |
Also Published As
Publication number | Publication date |
---|---|
TW200711060A (en) | 2007-03-16 |
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