WO2006082932A1 - 欠陥粒子測定装置および欠陥粒子測定方法 - Google Patents
欠陥粒子測定装置および欠陥粒子測定方法 Download PDFInfo
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- WO2006082932A1 WO2006082932A1 PCT/JP2006/301882 JP2006301882W WO2006082932A1 WO 2006082932 A1 WO2006082932 A1 WO 2006082932A1 JP 2006301882 W JP2006301882 W JP 2006301882W WO 2006082932 A1 WO2006082932 A1 WO 2006082932A1
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- Prior art keywords
- defective
- particle
- scattered light
- positional deviation
- sample
- Prior art date
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- 239000002245 particle Substances 0.000 title claims abstract description 255
- 230000002950 deficient Effects 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims description 38
- 238000009826 distribution Methods 0.000 claims abstract description 89
- 230000007547 defect Effects 0.000 claims description 83
- 238000003384 imaging method Methods 0.000 claims description 24
- 238000012937 correction Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 19
- 238000012545 processing Methods 0.000 description 15
- 238000000691 measurement method Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
- G01N15/1429—Signal processing
- G01N15/1433—Signal processing using image recognition
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
- G01N15/1434—Optical arrangements
- G01N2015/1452—Adjustment of focus; Alignment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
Definitions
- the present invention relates to a defective particle measuring apparatus and a defective particle for irradiating a sample with a focused laser beam, imaging scattered light from the sample, and measuring defective particles in the sample based on the imaging result It relates to a measurement method.
- Patent Document 1 Japanese Patent No. 2604607
- Patent Document 2 Japanese Patent No. 2832269
- a defect particle scattering image having a large scattering intensity can be determined to be a defective particle having a large size.
- the laser beam incident on the sample has a light intensity distribution in a plane perpendicular to the incident axis of the laser beam, even if it is a defective particle having the same size, it is near the incident axis. Compared to the scattering intensity from a certain defective particle, the scattering intensity from the defective particle located away from the incident axial force is lower. For this reason, the size of the defective particle cannot be determined by measuring only the scattering intensity of the defective particle scattering image. In other words, the defect particle scattering image and the size of the defect particle do not directly correspond.
- Fig. 18 shows the scattering intensity distribution when the beam diameter of the incident laser beam is 8 ⁇ m. ing.
- the defective particle SB exists on the incident axis
- the defective particle SA exists at a position 8 m away from the incident axis
- the size of the defective particle SA is 100 times that of the larger defective particle SB.
- Curve LA is the scattering intensity distribution of defect particle SA
- curve LB is the scattering intensity distribution of defect particle SB.
- the measured scattering intensity is about 7, which is the same scattering intensity, and the size of the defective particle cannot be determined only by the scattering intensity.
- Patent Document 2 has a problem that it takes a long time to measure because it is necessary to obtain a plurality of tomographic images.
- the present invention has been made in view of the above, and it is possible to determine the size of defective particles with high accuracy in a short time with a simple configuration and to obtain the density distribution of defective particles.
- An object is to provide an apparatus and a method for measuring defective particles.
- a defect particle measuring apparatus irradiates a sample with a focused laser beam, images the scattered light of the sample force, and performs the imaging
- a defect particle measuring apparatus for measuring defect particles in the sample based on the results, and based on the in-plane intensity distribution of each image of the defect particle scattered light on the image point side of each defect particle scattered light.
- a positional deviation calculating means for obtaining a focal position deviation and calculating a positional deviation amount in the depth direction of the defect particle corresponding to the focal position deviation is provided, and based on the positional deviation amount calculated by the positional deviation calculating means. The characteristics of the defective particles are measured.
- the defect particle measuring apparatus irradiates a sample with a focused laser beam, images the scattered light of the sample force, and detects defective particles in the sample based on the imaging result.
- This is a defective particle measuring device that measures the focal point deviation on the image point side of each defective particle scattered light based on the in-plane intensity distribution of each imaged defective particle scattered light, and corresponds to this focal position deviation.
- a positional deviation calculating means for calculating a positional deviation amount in the depth direction of the defect particles, and the depth
- a light intensity correcting means for correcting the light intensity of the defective particle scattered light corresponding to the amount of positional deviation in the direction, and the size of the defective particle is specified based on the light intensity corrected by the light intensity correcting means.
- a size specifying means is provided.
- the defective particle measuring apparatus irradiates a sample with focused laser light, images the in-plane intensity distribution of scattered light from within the sample, and measures defective particles in the sample
- a defect particle measuring apparatus that determines a focal position shift on the image point side of each defective particle scattered light based on an in-plane intensity distribution of each captured defective particle scattered light, and corresponds to the focal position shift.
- the positional deviation calculating means for calculating the positional deviation amount in the depth direction of the defective particles, the positional deviation amount in the depth direction are divided into a plurality of ranges, the number of defective particles existing in each range is obtained, and imaging optics
- the object point side focal position force of the system comprises density calculating means for calculating the distribution density of the defective particles in the depth direction.
- the positional deviation calculating means obtains the in-plane intensity distribution of the scattered light by approximating the Gaussian distribution.
- the sample is irradiated with the focused laser beam, the scattered light of the sample force is imaged, and the defective particle in the sample is detected based on the imaging result.
- This is a method for measuring defective particles, and based on the in-plane intensity distribution of each image of defective particle scattered light, the focal position deviation on the image point side of each defective particle scattered light is obtained, and this focal position deviation is handled.
- a positional deviation calculation step for calculating a positional deviation amount in the depth direction of the defect particles, and measuring the characteristics of the defective particles based on the positional deviation amount calculated by the positional deviation calculation step.
- the defective particle measurement method irradiates a sample with focused laser light, images scattered light from the sample force, and detects defective particles in the sample based on the imaging result.
- This is a defect particle measurement method that calculates the focal position shift of each defect particle scattered light on the image point side based on the in-plane intensity distribution of each captured defect particle scattered light, and copes with this focal position shift.
- a positional shift calculation step for calculating a positional shift amount in the depth direction of the defective particles; a light intensity correction step for correcting the light intensity of the defective particle scattered light in accordance with the positional shift amount in the depth direction; , Based on the light intensity corrected by the light intensity correction step.
- a size specifying step for specifying the size of the recessed particles.
- the defective particle measurement method is a method for irradiating a sample with focused laser light, imaging an in-plane intensity distribution of scattered light from within the sample, and measuring defective particles in the sample.
- a method of measuring a fallen particle wherein a focal position shift on the image point side of each defective particle scattered light is obtained based on an in-plane intensity distribution of each captured defective particle scattered light, and the defect corresponding to this focal position shift
- a position shift calculating step for calculating a position shift amount in the depth direction of the particles, and a position shift amount in the depth direction are divided into a plurality of ranges, and the number of defective particles existing in each range is obtained to obtain an imaging optical system.
- a density calculating step of calculating a distribution density of the defective particles in the depth direction are divided into a plurality of ranges, and the number of defective particles existing in each range is obtained to obtain an imaging optical system.
- the positional deviation calculating step obtains the in-plane intensity distribution of the scattered light by approximating a Gaussian distribution.
- the positional deviation calculating means has an image of each defective particle scattered light based on the in-plane intensity distribution of each imaged defective particle scattered light. A focal position shift on the point side is obtained, a positional shift amount in the depth direction of the defect particle corresponding to the focal position shift is calculated, and a light intensity correction unit corresponds to the positional shift amount in the depth direction.
- the light intensity of the defective particle scattered light is corrected
- the size specifying means specifies the size of the defective particle based on the light intensity corrected by the light intensity correcting means
- the density calculating means further includes the density calculating means
- the amount of positional deviation in the depth direction is divided into a plurality of ranges, the number of defective particles existing in each range is obtained, and the distribution density of the defective particles in the depth direction is calculated. So, so for example one When only a two-dimensional defect particle image is acquired, there is an effect that with a simple configuration, the size of the defect particle can be specified with high accuracy in a short time and the density distribution of the defect particle can be obtained.
- FIG. 1 is a block diagram showing a configuration of a defective particle measuring apparatus according to an embodiment of the present invention.
- FIG. 2 is a diagram for explaining the principle of the 90-degree scattering method.
- FIG. 3 is a diagram showing an example of a two-dimensional defect particle image in which defect particles are distributed almost uniformly.
- FIG. 4 is a diagram showing an example of a two-dimensional defect particle image in which foreign defect particles exist.
- FIG. 5 is a diagram showing the relationship between the spread of the point image at the image point side focal length and the distance of the object point side focal length force of the defective particle.
- FIG. 6 is a schematic diagram for explaining the relationship between the spread of a point image at the image point side focal length and the distance of the object point side focal length force of the defective particle.
- FIG. 7 is a diagram showing a scattering intensity distribution when the positional deviation is 2.4 / z m.
- FIG. 8 is a diagram showing a scattering intensity distribution when the positional deviation is 4 m.
- FIG. 9 is a diagram showing the scattering intensity distribution when the positional deviation is 8 ⁇ m.
- FIG. 10 is a diagram showing the scattering intensity distribution when the positional deviation is 20 m.
- FIG. 11 is a diagram showing a fitting result of a scattering intensity distribution and a Gaussian distribution of a defective particle image on a two-dimensional defective particle image.
- FIG. 12 is a diagram showing the relationship between the intensity distribution of incident laser light and the correction of scattering intensity.
- FIG. 13 is a diagram showing an example of a position shift table.
- FIG. 14 is a flowchart showing a size specifying process procedure by the control unit.
- FIG. 15 is a detailed flowchart showing the positional deviation calculation processing procedure shown in FIG.
- FIG. 16 is a diagram for explaining processing for obtaining a density distribution of defective particles with respect to positional deviation from a two-dimensional defective particle image.
- FIG. 17 is a flowchart showing a density distribution calculation processing procedure by the control unit.
- FIG. 1 is a block diagram showing a configuration of a defective particle measuring apparatus according to an embodiment of the present invention.
- this defective particle measuring apparatus 10 has an XYZ stage 12 placed on a seismic proof base 11, and a sample 14 such as a semiconductor wafer is placed on the XYZ stage 13 via a specimen stage 14. .
- the sample 14 is irradiated from the Y direction through the laser light mirrors 16 and 17 and the focusing lens 18 emitted from the laser light source 15.
- the irradiated laser light is scattered by defective particles in the sample 14, and a defective particle image is captured by the imaging unit 22 through an optical system realized by the microscope 21 arranged in the ⁇ Z direction.
- FIG. 2 laser light 41 focused from the Y direction is input to the sample 14, and the laser light scattered by the defective particles is captured as a defective particle image 43.
- the XYZ stage 12 moves in the X direction and relatively scans the sample 14 with the laser beam 41 for one line.
- the XYZ stage 12 is moved in the Z direction in units of beam diameter, and scanning of the next line is sequentially repeated.
- a two-dimensional defect particle image 42 obtained by scanning the XZ plane is obtained.
- 3 and 4 are diagrams showing examples of two-dimensional defect particle images. In Fig. 3, there are evenly uniform defect particle images, and in Fig. 4, there are two different types of large defect particles.
- the control unit C is realized by a CPU or the like, controls the imaging by the imaging unit 22, and controls the drive control unit 23 of the drive unit 23 that drives the XYZ stage 12.
- the control unit C is connected to the monitor 24, the input unit 25, and the storage unit 26, and the monitor 24 realized by a liquid crystal display or the like displays and outputs the measurement result by the control unit C, and the input unit 25 Realized by a mouse, keyboard, etc., inputs various information and instructions to the control unit C, and the storage unit 26 stores various types of information used for control processing of the control unit C, especially the position shift table 26a and intensity correction. Table 26b is stored.
- the control unit C includes an image processing unit 30.
- the image processing unit 30 acquires a two-dimensional defective particle image obtained by capturing a defective particle image in units of pixels corresponding to the scan, and performs various image processing.
- the positional deviation calculation unit 31 calculates the object point side focal position force of the microscope 21 based on the spread of the point image at the image point side focal position of the microscope 21 and the distance to the defective particle.
- the size of defective particles in the sample 14 is about several tens of meters, and the resolution of the microscope 21 is several hundred nm. Therefore, the defective particle can be considered as a point light source. Therefore, the size of the point light source can be obtained by obtaining the spread of the point image at the focal point position on the image point side.
- FIG. 5 is a diagram showing the relationship between the spread of the point image and the image point side focal position force and the distance to the defect particle
- FIG. 6 shows the object point side focus position, the defect particle, and the image point side focus.
- It is a schematic diagram showing the relationship of the spread of point images at positions. 5 and 6, the defect particle 50 in the sample 14 is a force for forming a point image on the image sensor 52 by the optical system 51 of the microscope 21.
- This point image has a spread L1.
- the relationship between the spread L1 and the distance between the defective particle 50 and the focal point P1 is as shown in FIG. 5, and as the point image spreads, the defective particle 50 is displaced in the Z direction from the focal position. !
- the spread of the point image corresponds to the intensity distribution of the defective particle image, as shown in FIGS.
- the intensity distributions shown in Fig. 7 to Fig. 10 show that when the displacement force of the defect particle is 0, 4 / ⁇ ⁇ , 8 ⁇ ⁇ , 20 ⁇ m, the wide force of the observed image is 2.4 m, 5 m, respectively. This indicates that the distance is 6 m, 13 m, or 34 m. Therefore, the positional deviation calculation unit 31 uses the fact that this intensity distribution approximates the Gaussian distribution, performs fitting between the intensity distribution and the Gaussian distribution, specifies the intensity distribution, and corresponds to the specified intensity distribution. It is possible to identify the displacement of defective particles.
- the relationship between the intensity distribution and the positional deviation of the defective particles is stored as a positional deviation table 26a, and the positional deviation calculating unit 31 identifies the intensity distribution and then refers to the positional deviation table 26a to detect the defective particles. Find the position shift.
- FIG. 11 shows a difference result between each fitting result and fitting in the X direction and the Z direction with respect to one defective particle image on the two-dimensional defective particle image.
- the intensity distribution is well fitted to the Gaussian distribution, and the resulting force in the X direction is defective.
- the focal point force is 5.3 m in the Y direction (depth direction) and in the Z direction. Fitting result force It is determined that the defective particles are displaced by 3.72 m in the focal position force Y direction (depth direction). Note that this difference in position shift is also considered to be affected by the aberration of the optical system 51.
- the incident laser light has an intensity distribution in a plane perpendicular to the incident axis, and this intensity distribution causes the scattering intensity to vary even for defective particles of the same size. Therefore, it is not possible to specify the defect particle size only by the scattering intensity. It was.
- the positional deviation calculation unit calculates the positional deviation amount of the object side focal position force for each defective particle image, as shown in FIG. Based on the relationship with the light intensity distribution, the intensity correction unit 32 has the same scattering intensity as when the defect particles are irradiated with the same incident light intensity as when the defect particles existed on the incident axis, regardless of the positional deviation amount.
- the detected scattering intensity is corrected so that The correction of the scattering intensity by this positional deviation amount is performed with reference to the intensity correction table 26b shown in FIG.
- the intensity correction table 26b stores a correction coefficient for correcting the scattering intensity corresponding to the positional deviation amount. By correcting such scattering intensity, the difference in scattering intensity due to positional deviation can be removed, so the size specifying unit 33 specifies the size of the missing particle only by the corrected scattering intensity alone. can do.
- the defect particle size specifying process will be described with reference to the flowchart shown in FIG. In FIG. 14, first, the image processing unit 30 acquires a two-dimensional defect particle image (step S101). Thereafter, the positional deviation calculation unit 31 performs a positional deviation calculation process for calculating the positional deviation amount of the defective particle for each defective particle image of the two-dimensional defective particle image (step S102). Thereafter, based on this positional deviation amount, the scattering intensity is corrected so that the incident light intensity is independent of the positional deviation (step S103). Thereafter, the size specifying unit 33 specifies the size of the defective particle based on the corrected scattering intensity (step S104), and the process is terminated. In order to specify the size of the defect particles, a table storing the relationship between the scattering intensity and the defect lattice size may be used.
- FIG. 15 is a flowchart showing the procedure of the positional deviation calculation process in step S102.
- one defect particle image is selected from the two-dimensional defect particle image (step S 201), and the in-plane intensity distribution and Gaussian distribution of the selected defect particle image are subjected to the fitting process. (Step S202). Thereafter, the positional deviation amount with respect to the fitted Gaussian distribution is acquired from the positional deviation table 26a (step S203). Thereafter, it is determined whether or not all the defective particle images have been processed (step S204).
- step S204 If all the defective particle images have not been processed (step S204, No), step The process proceeds to S201, the next defective particle image is selected, the above processing is repeated, and if all the defective particle images are processed (step S204, Yes), the process returns to step S102.
- the positional deviation of the defective particles obtained by the positional deviation calculating unit 31 described above is also used for calculating the density distribution of the defective particles.
- each of the defect particle images on the two-dimensional defect particle image 42 has a positional deviation amount. Therefore, depending on the range of the positional deviation amount, a plurality of sub-dimensional defect particle images 42-1 to 42-4 Can be classified. The number of defect particles for each of the classified sub-two-dimensional defect particle images 42-1 to 42-4 can be measured. As shown in FIG. 16, the distribution of the number of defect lattices corresponding to the displacement amount, That is, a density distribution can be obtained.
- the image processing unit 30 acquires a two-dimensional defect particle image (step S301). Thereafter, as in step S102, the positional deviation calculation unit 31 performs a positional deviation calculation process for calculating the positional deviation amount of the defective particles for each defective particle image of the two-dimensional defective particle image (step S302). Thereafter, the density distribution calculation unit 34 classifies each defective particle in a plurality of positional deviation ranges based on this positional deviation amount (step S303), obtains the number of defective particles for the positional deviation amount, and calculates the density distribution. Calculate (step S304) and end the process. The density distribution obtained in step S304 can be displayed and output on the monitor 24.
- the defective particle is regarded as a point light source, and the relationship between the spread of the point image at the image point side focal position and the positional deviation of the defective particle at the object point side focal position is used to obtain a two-dimensional defect particle.
- the intensity distribution of the defect particle image is fitted to the Gaussian distribution based on the image, the positional deviation amount of the defective particle is obtained, and based on this positional deviation amount, the scattering intensity is corrected to reduce the size of the defective particle. Since it is specified or the density distribution is obtained, it is possible to obtain a high-precision defect particle size in a simple configuration and in a short time without acquiring tomographic images, which are multiple two-dimensional defect particle images. ⁇ can measure the density distribution of defective particles.
- the size of the defective particles and the density distribution of the defective particles are obtained based on only one two-dimensional defective particle image. 3D images obtained by applying the embodiment of the present invention to each tomographic image. You can get a statue.
- a semiconductor wafer is shown as an example of the sample 14.
- the sample 14 is not limited to such a solid, and the sample 14 may be a fluid such as a liquid or a gas.
- the defective particle measuring apparatus and the defective particle measuring method according to the present invention are useful for a defective particle measuring apparatus and a defective particle measuring method for measuring defective particles in a sample such as a solid or a fluid.
- it is suitable for a defective particle measuring apparatus and a defective particle measuring method for measuring defective particles in a semiconductor wafer!
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EP06713025A EP1862790A1 (en) | 2005-02-03 | 2006-02-03 | Defective particle measuring apparatus and defective particle measuring method |
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JP2005-027941 | 2005-02-03 | ||
JP2005027941A JP4313322B2 (ja) | 2005-02-03 | 2005-02-03 | 欠陥粒子測定装置および欠陥粒子測定方法 |
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US (1) | US7633617B2 (ja) |
EP (1) | EP1862790A1 (ja) |
JP (1) | JP4313322B2 (ja) |
KR (1) | KR100926019B1 (ja) |
WO (1) | WO2006082932A1 (ja) |
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KR101186964B1 (ko) * | 2010-06-14 | 2012-09-28 | 건국대학교 산학협력단 | 미립자 분석 시스템 및 방법 |
CN106323809A (zh) * | 2016-11-07 | 2017-01-11 | 浙江师范大学 | 一种等厚透明高聚物制品的密度连续分布测定装置 |
US10437036B2 (en) * | 2017-10-02 | 2019-10-08 | Arkray, Inc. | Analysis apparatus |
KR102138222B1 (ko) * | 2019-04-11 | 2020-07-27 | 주식회사 제이에스티앤랩 | 배출가스 입자 측정 장치 |
US11353389B2 (en) | 2020-09-25 | 2022-06-07 | Applied Materials, Inc. | Method and apparatus for detection of particle size in a fluid |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964136A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体ウェーハの欠陥測定方法及び同装置 |
WO1997035162A1 (fr) * | 1996-03-15 | 1997-09-25 | Hitachi, Ltd. | Procede et dispositif permettant de mesurer les defauts d'un cristal a partir de la surface de ce dernier |
JP3190157B2 (ja) * | 1993-03-05 | 2001-07-23 | 株式会社東芝 | 結晶欠陥検査方法 |
JP2002071564A (ja) * | 2000-08-24 | 2002-03-08 | Toshiba Ceramics Co Ltd | シリコン単結晶ウエハ中の欠陥評価方法 |
JP3536203B2 (ja) * | 1999-06-09 | 2004-06-07 | 東芝セラミックス株式会社 | ウェーハの結晶欠陥測定方法及び装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844340A (ja) * | 1981-09-10 | 1983-03-15 | Kureha Chem Ind Co Ltd | 電気泳動度測定装置 |
JP2604607B2 (ja) | 1987-12-09 | 1997-04-30 | 三井金属鉱業株式会社 | 欠陥分布測定法および装置 |
JP2722362B2 (ja) * | 1992-03-27 | 1998-03-04 | 三井金属鉱業株式会社 | 粒子または欠陥の大きさ情報の測定方法および装置 |
JP2832269B2 (ja) * | 1992-09-14 | 1998-12-09 | 三井金属鉱業株式会社 | 三次元粒子検出方法及び装置 |
JP3366066B2 (ja) | 1993-09-03 | 2003-01-14 | ラトックシステムエンジニアリング株式会社 | 結晶欠陥検出装置における観察深度設定方法 |
JPH07286953A (ja) * | 1994-04-19 | 1995-10-31 | Toa Medical Electronics Co Ltd | イメージングフローサイトメータ |
JPH11148903A (ja) | 1997-09-04 | 1999-06-02 | Komatsu Electron Metals Co Ltd | 半導体の欠陥密度測定装置および方法並びに半導体の欠陥散乱能測定装置および方法 |
-
2005
- 2005-02-03 JP JP2005027941A patent/JP4313322B2/ja active Active
-
2006
- 2006-02-03 US US11/883,510 patent/US7633617B2/en active Active
- 2006-02-03 EP EP06713025A patent/EP1862790A1/en not_active Withdrawn
- 2006-02-03 WO PCT/JP2006/301882 patent/WO2006082932A1/ja active Application Filing
- 2006-02-03 KR KR1020077018949A patent/KR100926019B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3190157B2 (ja) * | 1993-03-05 | 2001-07-23 | 株式会社東芝 | 結晶欠陥検査方法 |
JPH0964136A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体ウェーハの欠陥測定方法及び同装置 |
WO1997035162A1 (fr) * | 1996-03-15 | 1997-09-25 | Hitachi, Ltd. | Procede et dispositif permettant de mesurer les defauts d'un cristal a partir de la surface de ce dernier |
JP3536203B2 (ja) * | 1999-06-09 | 2004-06-07 | 東芝セラミックス株式会社 | ウェーハの結晶欠陥測定方法及び装置 |
JP2002071564A (ja) * | 2000-08-24 | 2002-03-08 | Toshiba Ceramics Co Ltd | シリコン単結晶ウエハ中の欠陥評価方法 |
Also Published As
Publication number | Publication date |
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US20080111992A1 (en) | 2008-05-15 |
US7633617B2 (en) | 2009-12-15 |
JP2006214867A (ja) | 2006-08-17 |
KR100926019B1 (ko) | 2009-11-11 |
KR20070091236A (ko) | 2007-09-07 |
EP1862790A1 (en) | 2007-12-05 |
JP4313322B2 (ja) | 2009-08-12 |
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