WO2006079333A3 - Iii/v-halbleiter - Google Patents

Iii/v-halbleiter Download PDF

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Publication number
WO2006079333A3
WO2006079333A3 PCT/DE2006/000140 DE2006000140W WO2006079333A3 WO 2006079333 A3 WO2006079333 A3 WO 2006079333A3 DE 2006000140 W DE2006000140 W DE 2006000140W WO 2006079333 A3 WO2006079333 A3 WO 2006079333A3
Authority
WO
WIPO (PCT)
Prior art keywords
mol
semiconductor
iii
carrier layer
doped
Prior art date
Application number
PCT/DE2006/000140
Other languages
English (en)
French (fr)
Other versions
WO2006079333A2 (de
Inventor
Bernardette Kunert
Joerg Koch
Stefan Reinhard
Kerstin Volz
Wolfgang Stolz
Original Assignee
Univ Marburg Philipps
Bernardette Kunert
Joerg Koch
Stefan Reinhard
Kerstin Volz
Wolfgang Stolz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102005004582A external-priority patent/DE102005004582A1/de
Application filed by Univ Marburg Philipps, Bernardette Kunert, Joerg Koch, Stefan Reinhard, Kerstin Volz, Wolfgang Stolz filed Critical Univ Marburg Philipps
Priority to CA2594947A priority Critical patent/CA2594947C/en
Priority to EP06705870.1A priority patent/EP1842268B1/de
Priority to JP2007551544A priority patent/JP5369325B2/ja
Priority to KR1020077017168A priority patent/KR101320836B1/ko
Publication of WO2006079333A2 publication Critical patent/WO2006079333A2/de
Publication of WO2006079333A3 publication Critical patent/WO2006079333A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32375—In(As)N with small amount of P, or In(As)P with small amount of N

Abstract

Die Erfindung betrifft eine monolithische integrierte Halbleiterstruktur mit einer Trägerschicht auf Basis dotiertem Si oder dotiertem GaP und mit einem hierauf angeordneten III/V Halbleiter mit der Zusammensetzung Gaxlny-NaAsbPcSbd, wobei x = 70 - 100 Mol-%, y = 0 - 30 Mol-%, a = 0,5 - 15 Mol-%, b = 67,5 - 99,5 Mol-%, c = 0 - 32,0 Mol-% und d = 0 - 15 Mol-%, wobei sich x und y stets zu 100 Mo1-% addieren, wobei sich a, b, c und d stets zu 100 Mol-% addieren, und wobei das Verhältnis der Summen aus x und y einerseits und a bis d andererseits im wesentlichen 1:1beträgt, Verfahren zu deren Herstellung, neue Halbleiter, deren Verwendung zur Herstellung von Lumineszenzdioden und Laserdioden, oder auch Modulator- und Detektorstrukturen, die monolithisch in integrierte Schaltkreise auf Basis der Si- oder GaP Technologie integriert sind.
PCT/DE2006/000140 2005-01-26 2006-01-26 Iii/v-halbleiter WO2006079333A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA2594947A CA2594947C (en) 2005-01-26 2006-01-26 Iii/v semiconductor
EP06705870.1A EP1842268B1 (de) 2005-01-26 2006-01-26 Iii/v-halbleiter
JP2007551544A JP5369325B2 (ja) 2005-01-26 2006-01-26 Ｉｉｉ／ｖ半導体
KR1020077017168A KR101320836B1 (ko) 2005-01-26 2006-01-26 Ⅲ/ⅴ 반도체

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64710605P 2005-01-26 2005-01-26
DE102005004582A DE102005004582A1 (de) 2005-01-26 2005-01-26 III/V-Halbleiter
DE102005004582.0 2005-01-26
US60/647,106 2005-01-26

Publications (2)

Publication Number Publication Date
WO2006079333A2 WO2006079333A2 (de) 2006-08-03
WO2006079333A3 true WO2006079333A3 (de) 2008-04-10

Family

ID=36644280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2006/000140 WO2006079333A2 (de) 2005-01-26 2006-01-26 Iii/v-halbleiter

Country Status (5)

Country Link
EP (1) EP1842268B1 (de)
JP (5) JP5369325B2 (de)
KR (1) KR101320836B1 (de)
CA (1) CA2594947C (de)
WO (1) WO2006079333A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011016366B4 (de) 2011-04-07 2018-09-06 Nasp Iii/V Gmbh III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung
DE102011107657A1 (de) * 2011-07-12 2013-01-17 Nasp Iii/V Gmbh Monolithische integrierte Halbleiterstruktur
US9595438B2 (en) 2011-09-12 2017-03-14 Nasp Iii/V Gmbh Method for producing a III/V Si template
US9410890B2 (en) * 2012-03-19 2016-08-09 Kla-Tencor Corporation Methods and apparatus for spectral luminescence measurement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621646A2 (de) * 1993-04-22 1994-10-26 Sharp Kabushiki Kaisha Farbanzeige / Farbdetektor
EP0896406A2 (de) * 1997-08-08 1999-02-10 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung , optisches Kommunikationssystem unter Verwendung desselben und Herstellungsverfahren
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US20020195607A1 (en) * 1996-08-27 2002-12-26 Shunichi Sato Optical semiconductor device having an active layer containing N

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211912A (ja) * 1988-02-18 1989-08-25 Nec Corp 半導体基板
JPH0637355A (ja) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｉｉｉ−ｖ族合金半導体およびその製造方法
JP3425185B2 (ja) * 1993-03-26 2003-07-07 日本オプネクスト株式会社 半導体素子
JPH09213918A (ja) * 1996-02-01 1997-08-15 Furukawa Electric Co Ltd:The 光電子集積回路素子
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
JP4045639B2 (ja) * 1997-10-24 2008-02-13 住友電気工業株式会社 半導体レーザおよび半導体発光素子
US6479844B2 (en) * 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US6813295B2 (en) * 2002-03-25 2004-11-02 Agilent Technologies, Inc. Asymmetric InGaAsN vertical cavity surface emitting lasers
JP2004296845A (ja) * 2003-03-27 2004-10-21 Ricoh Co Ltd 量子井戸構造および半導体発光素子および光送信モジュールおよび光伝送システム
JP2004221428A (ja) * 2003-01-16 2004-08-05 Toshiba Corp 光半導体素子およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621646A2 (de) * 1993-04-22 1994-10-26 Sharp Kabushiki Kaisha Farbanzeige / Farbdetektor
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US20020195607A1 (en) * 1996-08-27 2002-12-26 Shunichi Sato Optical semiconductor device having an active layer containing N
EP0896406A2 (de) * 1997-08-08 1999-02-10 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung , optisches Kommunikationssystem unter Verwendung desselben und Herstellungsverfahren

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. YONEZU: "Control of structural defects in group III-V-N alloys grown on Si", SEMICONDUCTOR SCIENCE AND TECHNOLOGY IOP PUBLISHING UK, vol. 17, no. 8, 1 August 2002 (2002-08-01), stevenage, pages 762 - 768, XP002468397, ISSN: 0268-1242 *
IZADIFARD M ET AL: "Evaluation of optical quality and defect properties of GaNxP1Ÿ#x2212;x alloys lattice matched to Si", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 85, no. 26, 27 December 2004 (2004-12-27), pages 6347 - 6349, XP012063933, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
JP2016213488A (ja) 2016-12-15
JP2019075540A (ja) 2019-05-16
JP2013102209A (ja) 2013-05-23
JP5369325B2 (ja) 2013-12-18
EP1842268A2 (de) 2007-10-10
EP1842268B1 (de) 2019-08-28
KR101320836B1 (ko) 2013-10-22
JP2008529260A (ja) 2008-07-31
JP2015167249A (ja) 2015-09-24
CA2594947A1 (en) 2006-08-03
KR20070092752A (ko) 2007-09-13
JP6748156B2 (ja) 2020-08-26
CA2594947C (en) 2015-11-24
WO2006079333A2 (de) 2006-08-03

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