WO2006066544A1 - Verfahren zur herstellung einer dünnschichtsolarzelle mit mikrokristallinem silizium sowie schichtfolge - Google Patents
Verfahren zur herstellung einer dünnschichtsolarzelle mit mikrokristallinem silizium sowie schichtfolge Download PDFInfo
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- WO2006066544A1 WO2006066544A1 PCT/DE2005/002237 DE2005002237W WO2006066544A1 WO 2006066544 A1 WO2006066544 A1 WO 2006066544A1 DE 2005002237 W DE2005002237 W DE 2005002237W WO 2006066544 A1 WO2006066544 A1 WO 2006066544A1
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- microcrystalline
- hwcvd
- silicon
- solar cell
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- -1 but not limited to Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000001190 organyl group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for producing a thin-film solar cell with microcrystalline silicon and a layer sequence.
- Microcrystalline thin-film solar cells comprise different layers of silicon, which differ in their doping and in their degree of crystallization.
- the layers are deposited on substrates, such as glass.
- substrates such as glass.
- various methods are known.
- PECVD method a gas mixture in a plasma is broken down into fragments
- HWCVD method the decomposition of the gas or the gas mixture takes place by heating a wire.
- decomposition products are deposited on the substrate, resulting in a coating.
- the photo CVD method and sputtering are known, with which a deposition of layers on surfaces is possible.
- the layer adjacent to the transparent substrate is a p-layer, that is to say a p-doped silicon layer, the i-layer is located on the p-layer and is not doped.
- the n-layer On the i-layer is the n-layer, which is n-doped.
- the p- and n-layers are interchanged and also enclose an i-layer.
- the microcrystalline p-layer is p-doped silicon, which is doped with boron, for example.
- positively doping compounds for example boron compounds and hydrogen gas are used, which are decomposed and deposited on the surface.
- the resulting layer is microcrystalline.
- HWCVD, PECVD and Photo-CVD be used.
- a mixture comprising a silicon compound and hydrogen is decomposed, resulting in a microcrystalline.
- dlline Si layer separates.
- the known methods HWCVD, PECVD, sputtering and photo-CVD can also be used for this purpose.
- the deposition of the microcrystalline n-type layer a mixture comprising a silicon-containing compound, hydrogen and negatively doping compounds, such as a phosphorus-containing compound, is decomposed.
- the HWCVD, PECVD and Photo-CVD methods can be used.
- thin-film solar cells are deposited on transparent substrates by means of PECVD.
- the order of deposition is pin or nip, with the individual layers usually being deposited in different chambers.
- the microcrystalline layers are deposited using various possible excitation frequencies, such as radio frequencies, microwave, or Vhf (very high frequency). To achieve high deposition rates, high plasma efficiencies are required in the PECVD.
- the HWCVD process requires high wire temperatures to achieve high deposition rates. So far, solar cells with low filling factor and low no-load voltage have been produced at high deposition rates.
- the HWCVD method is also much more time-consuming than the PECVD method. At low substrate temperatures, solar cells with very high Voc and FF could be achieved.
- the open circuit voltage of the solar cells should be increased by the process. Furthermore, a layer sequence is to be made available which has properties which enable higher open-circuit voltages and filling factors. The procedure should be carried out in as short a time as possible.
- the object is achieved by the in the character- the part specified in claim 1 .Features.
- a transparent, current-conducting layer is deposited on a transparent substrate, such as glass or plastic, which is referred to in the art as a TCO layer. It usually has a layer thickness of 0.5-2 ⁇ m and, for example but not by way of limitation, may have the following composition: SnO 2 , ZnO, ITO.
- the deposition can be carried out by conventional methods, such as sputtering or CVD.
- the invention encompasses the production of a nip-type solar cell.
- the same steps are carried out, except that the order for the application of the p- and the n-layer are reversed.
- a microcrystalline p-layer is deposited onto the TCO layer, preferably by means of the PECVD method, on the transparent substrate with the TCO layer lying over it.
- the separation can also be carried out using other methods known from the prior art, such as, for example, the HWCVD method, sputtering or the photo-CVD method.
- This step is carried out with process parameters and gas mixtures known to the person skilled in the art.
- the gas mixture components include a silicon-containing compound, hydrogen and a compound which deposits a substance which leads to a p-type doping.
- silicon-containing compound is, for example, but not limited, at least one component from the group consisting of SiH 4 , methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, disilane, trisilane or halosilanes, such as HSiCl 3 , H 2 SiCl 2 , H 3 SiCl, SiCl 4 or the corresponding fluorine compounds into consideration.
- the concentration of the silicon compounds is for example between 0.1% and 10%.
- the total pressure may, for example, be between 0.2 hPa and 20 hPa.
- At least one component from the group consisting of diborane, trimethylborane or organyl compounds of Ga and Al, such as the trimethylsulfonyl or triethyls are used.
- the concentration of the p-doping compound is, for example, between 0.1% -2% based on the silicon-containing compound.
- the gas mixture comprising the silicon-containing compound component, the compound which precipitates the component resulting in a p-type doping and hydrogen, is prepared by the PECVD method or another method such as the HWCVD method or the Photo CVD method. Process decomposes and the resulting components are deposited in the form of a microcrystalline p-doped silicon layer.
- the substrate temperature may for example be between 50 0 C and 300 0 C.
- the depositing layers have a layer thickness of 2 nm - 100 nm, preferably 5 nm - 30 nm, particularly preferably 10 nm -20 nm.
- a microcrystalline silicon layer is deposited by the HWCVD method. It has surprisingly been found that the deposition of a layer of microcrystalline silicon by means of the HWCVD method leads to an increase in the open-circuit voltage, the fill factor and thus to an increase in the efficiency of solar cells.
- the thickness of the layer deposited by the HWCVD method those layers may have a thickness of 2 nm - 200 nm, preferably 5 nm - 50 nm, particularly preferably 10 nm - 20 nm.
- a gas comprising hydrogen and a silicon-depositing compound such as, but not limited to, SiH 4 , disilane, trisilane or halosilanes, such as HSiCl 3 , H 2 SiCl 2 , H 3 SiCli / SiCl 4 or the corresponding fluorine compounds - used gene.
- a silicon-depositing compound such as, but not limited to, SiH 4 , disilane, trisilane or halosilanes, such as HSiCl 3 , H 2 SiCl 2 , H 3 SiCli / SiCl 4 or the corresponding fluorine compounds - used gene.
- Wire material tungsten, tantalum, graphite, rhenium or osmium or high-melting materials.
- Wire temperature 1200 0 C - 2200 0 C (or preferably 1500 0 C - 1800 0 C)
- the layer produced with these parameters is 2 nm-200 nm thick, preferably 5-20 nm, and has a crystallinity of> 0%.
- the substrate temperatures are preferably 50 0 C - 300 0 C, more preferably between 150 0 C and 200 0 C.
- the gas concentrations are for example at 0, 1- 10% silane or silicon-containing compound based on hydrogen.
- the ranges of the total pressure are on the order of 1 Pa - 100 Pa.
- microcrystalline silicon layer causes the entire solar cell has a higher open circuit voltage and a higher fill factor and thus a higher efficiency. It forms part of the microcrystalline i-layer applied to the p-doped layer.
- the absolute efficiency is increased up to 0, 8%, the idle voltage up to 25 mV and the fill factor increased up to 3%.
- a further microcrystalline i-silicon layer is preferably deposited by means of the PECVD method.
- alternation methods such as HWCVD, sputtering or photo-CVD.
- the deposition can in principle be carried out with the same components as in the deposition of the intermediate layer.
- the compounds used for the deposition are hydrogen and at least, but not limited to, a component from the group consisting of SiH 4 , disilane, trisilane, or halosilanes, such as HSiCl 3 , H 2 SiCl 2 , H 3 SiCl, SiCl 4 or. the corresponding fluorine compounds.
- This layer preferably has a crystallinity of> 20%.
- the silane concentrations or the concentration of the silicon-containing compound can be for example 0, 1% - 100%. Hydrogen is optional.
- the temperature is in a range of preferably 50-400 0 C, most preferably 150 ° C-200 0 C at pin layer sequences or 150 0 C - 250 0 C at nip layer sequences.
- the total pressure is for example between 0, 2 hPa - 20 hPa.
- the layer thickness of the microcrystalline i-layer deposited by the PECVD method is preferably between 0.2 ⁇ m and 10 ⁇ m, particularly preferably between 0.5 ⁇ m and 2 ⁇ m.
- Thickness preferably 0, 5 ⁇ m -5 ⁇ m.
- the layer deposited by the HWCVD method and the PECVD method forms an i-layer of microcrystalline silicon which, compared to an i-layer according to the prior art, enables a higher open circuit voltage, a higher fill factor and a higher efficiency.
- n-layer is deposited on the i-layer.
- the n-layer may be amorphous or microcrystalline.
- a gas mixture comprising a silicon-depositing compound, if necessary. Hydrogen and a n-doping effecting component used.
- SiH 4 methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane or HSiCl 3 , H 2 SiCl 2 , HSiCl 3 or SiCl 4 can be used as the silicon-depositing component, for example but not by way of limitation.
- phosphine As an n-doping compound, for example, phosphine can be used.
- the deposition of the n-doped layer can be carried out, for example, by the PECVD method, photo-CVD, sputtering or by the HWCVD method.
- the layer thickness of the n-layer is preferably between 5 nm and 50 nm, particularly preferably between 10 nm and 30 nm.
- the preferred coating temperatures are between 100 0 C and 400 0 C.
- the total pressure is usually between 0, 2 hPa - 20 hPa.
- the concentration of the silicon-containing compound in the gas phase is between 0, 1% - 100%.
- Phosphine is used in a concentration range between preferably 0, 1% - 5%, based on silane or the silicon-containing compound.
- the uppermost layer ie the n-layer at pin and the p-layer at nip, is coated with a reflective layer.
- a reflective layer This can consist, for example, of a TCO layer and a metal layer, for example of Ag or Al.
- the invention also encompasses stackings of layers which contain the layer sequence according to the invention at least once.
- the invention also includes layer sequences with the following patterns:
- a thin film solar cell comprising: a transparent substrate, a TCO layer, a microcrystalline p-layer, a microcrystalline intrinsic silicon layer applied by the HWCVD method, an applied with the PECVD method i-layer, a microcrystalline or amorphous n-layer, a reflective layer.
- a thin film solar cell comprising: a transparent substrate, a TCO layer, a microcrystalline n-layer, a microcrystalline intrinsic silicon layer applied by the HWCVD method, an i-layer applied by the PECVD method, a microcrystalline or amorphous p Layer, a reflective layer.
- the layers p, n, TCO are conventional and not limited to the parameters and methods of preparation described in the description.
- a 5-50 nm thick intrinsic HW layer is deposited on the p-layer, which was deposited on a ZnO substrate by means of vhf-PECVD.
- This layer is made with a wire temperature of 1650 0 C, 3, 5 Pa and 2 -10% silane in hydrogen at a deposition rate of 1-2 A / s.
- the production of the solar cell is continued with the deposition of the i-layer by means of vhf-PECVD at high growth rate. This increases the no-load voltage by 20 mV, the fill factor by 2% and the efficiency by 0, 8% absolute.
- FIG. 1 shows the comparison of the open-circuit voltages between pin solar cells with and without the intermediate layer according to the invention.
- the abscissa represents the silane concentration for the i-layer deposition in%.
- the ordinate shows the achieved no-load voltages in mV.
- FIG. 2 shows the comparison of the filling factors between pin solar cells with and without the intermediate layer according to the invention.
- the abscissa indicates the silane concentration for the i
- the ordinate shows the achieved fill factors in%.
- the circles represent solar cells without inventive
- the triangles represent solar cells with inventive Intermediate layer. It can be seen how the filling factors increase according to the invention.
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Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05825838A EP1829117A1 (de) | 2004-12-21 | 2005-12-13 | Verfahren zur herstellung einer dünnschichtsolarzelle mit mikrokristallinem silizium sowie schichtfolge |
KR1020077015447A KR101326671B1 (ko) | 2004-12-21 | 2005-12-13 | 미세결정 실리콘 및 적층체를 갖는 박막 태양 전지를 생성하는 방법 |
US11/793,690 US8110246B2 (en) | 2004-12-21 | 2005-12-13 | Method for producing a thin-film solar cell by use of microcrystalline silicon and a layer sequence |
CN2005800441709A CN101088171B (zh) | 2004-12-21 | 2005-12-13 | 利用微晶硅制造薄层太阳能电池的方法以及层序列 |
AU2005318723A AU2005318723B2 (en) | 2004-12-21 | 2005-12-13 | Method for production of a thin-layer solar cell with microcrystalline silicon and layer sequence |
JP2007547162A JP5336084B2 (ja) | 2004-12-21 | 2005-12-13 | マイクロ結晶シリコンを有する薄膜太陽電池及び積層体を製造する方法 |
US13/286,359 US8664522B2 (en) | 2004-12-21 | 2011-11-01 | Method for producing a thin-film solar cell by use of microcrystalline silicon and a layer sequence |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004061360A DE102004061360A1 (de) | 2004-12-21 | 2004-12-21 | Verfahren zur Herstellung einer Dünnschichtsolarzelle mit mikrokristallinem Silizium sowie Schichtfolge |
DE102004061360.5 | 2004-12-21 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/793,690 A-371-Of-International US8110246B2 (en) | 2004-12-21 | 2005-12-13 | Method for producing a thin-film solar cell by use of microcrystalline silicon and a layer sequence |
US13/286,359 Division US8664522B2 (en) | 2004-12-21 | 2011-11-01 | Method for producing a thin-film solar cell by use of microcrystalline silicon and a layer sequence |
Publications (1)
Publication Number | Publication Date |
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WO2006066544A1 true WO2006066544A1 (de) | 2006-06-29 |
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PCT/DE2005/002237 WO2006066544A1 (de) | 2004-12-21 | 2005-12-13 | Verfahren zur herstellung einer dünnschichtsolarzelle mit mikrokristallinem silizium sowie schichtfolge |
Country Status (8)
Country | Link |
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US (2) | US8110246B2 (de) |
EP (1) | EP1829117A1 (de) |
JP (1) | JP5336084B2 (de) |
KR (1) | KR101326671B1 (de) |
CN (1) | CN101088171B (de) |
AU (1) | AU2005318723B2 (de) |
DE (1) | DE102004061360A1 (de) |
WO (1) | WO2006066544A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8642450B2 (en) | 2007-11-09 | 2014-02-04 | Alliance For Sustainable Energy, Llc | Low temperature junction growth using hot-wire chemical vapor deposition |
EP2216826A4 (de) * | 2007-11-30 | 2016-10-12 | Kaneka Corp | Photoelektrische siliciumdünnfilm-umwandlungsvorrichtung |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101820006B (zh) * | 2009-07-20 | 2013-10-02 | 湖南共创光伏科技有限公司 | 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法 |
JP4902779B2 (ja) * | 2009-11-30 | 2012-03-21 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
WO2011076466A2 (en) * | 2009-12-22 | 2011-06-30 | Oerlikon Solar Ag, Truebbach | Thin-film silicon tandem solar cell and method for manufacturing the same |
KR20130112148A (ko) * | 2012-04-03 | 2013-10-14 | 엘지전자 주식회사 | 박막 태양 전지 |
US8735210B2 (en) * | 2012-06-28 | 2014-05-27 | International Business Machines Corporation | High efficiency solar cells fabricated by inexpensive PECVD |
CN205994360U (zh) | 2013-10-30 | 2017-03-08 | 阿祖家电工具贸易产业公司 | 双腔壶 |
CN108336185A (zh) * | 2018-02-09 | 2018-07-27 | 中国科学院宁波材料技术与工程研究所 | 一种钝化接触晶体硅太阳电池的制备方法 |
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US6124545A (en) * | 1998-03-31 | 2000-09-26 | Angewandte Solarenergie-Ase Gmbh | Thin film solar cell |
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DE3441044A1 (de) * | 1984-11-09 | 1986-05-22 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen |
EP0394674B1 (de) * | 1989-03-23 | 1996-05-08 | Victor Company Of Japan, Limited | Element zur Lichtumwandlung und eine Abbildungsvorrichtung |
US5397737A (en) * | 1992-05-05 | 1995-03-14 | The United States Of America As Represented By The United States Department Of Energy | Deposition of device quality low H content, amorphous silicon films |
CN1135635C (zh) * | 1994-03-25 | 2004-01-21 | 阿莫科/恩龙太阳公司 | 增强光电器件和电子器件的光和电特性的等离子淀积工艺 |
JPH11135818A (ja) * | 1997-10-30 | 1999-05-21 | Sharp Corp | 太陽電池 |
DE19935046C2 (de) | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
JP4412766B2 (ja) * | 1999-07-29 | 2010-02-10 | 京セラ株式会社 | 薄膜多結晶Si太陽電池 |
JP2002198549A (ja) * | 2000-12-27 | 2002-07-12 | Kyocera Corp | 薄膜結晶質シリコン系太陽電池 |
JP2003282902A (ja) * | 2002-03-20 | 2003-10-03 | Kyocera Corp | 薄膜太陽電池 |
JP2003298077A (ja) | 2002-03-29 | 2003-10-17 | Ebara Corp | 太陽電池 |
JP2003347220A (ja) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Cat−PECVD法、それを用いて形成した膜、およびその膜を備えた薄膜デバイス |
JP2004158619A (ja) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびその製造方法 |
-
2004
- 2004-12-21 DE DE102004061360A patent/DE102004061360A1/de not_active Withdrawn
-
2005
- 2005-12-13 WO PCT/DE2005/002237 patent/WO2006066544A1/de active Application Filing
- 2005-12-13 JP JP2007547162A patent/JP5336084B2/ja not_active Expired - Fee Related
- 2005-12-13 AU AU2005318723A patent/AU2005318723B2/en not_active Ceased
- 2005-12-13 CN CN2005800441709A patent/CN101088171B/zh not_active Expired - Fee Related
- 2005-12-13 US US11/793,690 patent/US8110246B2/en not_active Expired - Fee Related
- 2005-12-13 EP EP05825838A patent/EP1829117A1/de not_active Withdrawn
- 2005-12-13 KR KR1020077015447A patent/KR101326671B1/ko not_active IP Right Cessation
-
2011
- 2011-11-01 US US13/286,359 patent/US8664522B2/en not_active Expired - Fee Related
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US6124545A (en) * | 1998-03-31 | 2000-09-26 | Angewandte Solarenergie-Ase Gmbh | Thin film solar cell |
Non-Patent Citations (1)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8642450B2 (en) | 2007-11-09 | 2014-02-04 | Alliance For Sustainable Energy, Llc | Low temperature junction growth using hot-wire chemical vapor deposition |
EP2216826A4 (de) * | 2007-11-30 | 2016-10-12 | Kaneka Corp | Photoelektrische siliciumdünnfilm-umwandlungsvorrichtung |
Also Published As
Publication number | Publication date |
---|---|
CN101088171B (zh) | 2013-03-20 |
DE102004061360A1 (de) | 2006-07-13 |
US8664522B2 (en) | 2014-03-04 |
EP1829117A1 (de) | 2007-09-05 |
KR20070090235A (ko) | 2007-09-05 |
US20090007964A1 (en) | 2009-01-08 |
US8110246B2 (en) | 2012-02-07 |
AU2005318723A1 (en) | 2006-06-29 |
KR101326671B1 (ko) | 2013-11-08 |
AU2005318723B2 (en) | 2011-12-01 |
US20120067411A1 (en) | 2012-03-22 |
CN101088171A (zh) | 2007-12-12 |
JP2008524863A (ja) | 2008-07-10 |
JP5336084B2 (ja) | 2013-11-06 |
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