WO2006023060A2 - Group iii nitride based quantum well light emitting device structures with an indium containing capping structure - Google Patents
Group iii nitride based quantum well light emitting device structures with an indium containing capping structure Download PDFInfo
- Publication number
- WO2006023060A2 WO2006023060A2 PCT/US2005/022597 US2005022597W WO2006023060A2 WO 2006023060 A2 WO2006023060 A2 WO 2006023060A2 US 2005022597 W US2005022597 W US 2005022597W WO 2006023060 A2 WO2006023060 A2 WO 2006023060A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- group iii
- iii nitride
- type
- forming
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 96
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 67
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 119
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 55
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims 10
- 230000004888 barrier function Effects 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
Definitions
- This invention relates to microelectronic devices and fabrication methods therefor, and more particularly to structures which may be utilized in Group III nitride semiconductor devices, such as light emitting diodes (LEDs).
- LEDs light emitting diodes
- a light emitting diode generally includes a diode region on a microelectronic substrate.
- the microelectronic substrate may comprise, for example, gallium arsenide, gallium phosphide, alloys thereof, silicon carbide and/or sapphire.
- Group III nitride based LEDs such as gallium nitride based LEDs
- gallium nitride LEDs have been fabricated on sapphire or silicon carbide substrates. Such substrates may result in mismatches between the crystal lattice of the substrate and the gallium nitride.
- Various techniques have been employed to overcome potential problems with the growth of gallium nitride on sapphire and/or silicon carbide. For example, aluminum nitride (AlN) may be utilized as a buffer between a silicon carbide substrate and a Group III active layer, particularly a gallium nitride active layer.
- aluminum nitride is insulating rather than conductive.
- structures with aluminum nitride buffer layers typically require shorting contacts that bypass the aluminum nitride buffer to electrically link the conductive silicon carbide substrate to the Group III nitride active layer.
- conductive buffer layer materials such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), or combinations of gallium nitride and aluminum gallium nitride may allow for elimination of the shorting contacts typically utilized with AlN buffer layers.
- GaN gallium nitride
- AlGaN aluminum gallium nitride
- Group III nitride devices may be produced at lower cost with a higher performance. Nevertheless, although these conductive buffer materials offer these advantages, their crystal lattice match with silicon carbide is less satisfactory than is that of aluminum nitride.
- Some embodiments of the present invention provide Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices that include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride- layer and including at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer.
- the Group III nitride layer including indium also includes aluminum.
- the Group III nitride layer including indium may include InAlGaN.
- the Group III nitride layer including indium may also include InGaN.
- the Group III nitride layer including indium may be from about 20 to about 320 A thick.
- the Group III nitride layer including indium includes a layer of InAlGaN having a higher Al composition in a region distal from the active region than is present in a region proximate the active region.
- the InAlGaN layer may be continuously graded.
- the InAlGaN layer may include a plurality oflnAlGaN layers having different Al and/or In compositions.
- the Group III nitride layer including indium includes a first layer of In x AI y Ga ⁇ -x-y N, where 0 ⁇ x ⁇ 0.2 and 0 ⁇ y ⁇ 0.4 and a second layer of In w Al z Gai -w-z N, where 0 ⁇ w ⁇ 0.2 and y ⁇ z ⁇ l.
- the first layer may have a thickness of from about 10 to about 200 A and the second layer may have a thickness of from about 10 to about 120 A.
- the light emitting devices further include a p-type Group III nitride layer disposed between the second contact and the p-type Group III nitride layer including aluminum.
- the p-type Group HI nitride layer disposed between the second contact arid the p-type Group III nitride layer including aluminum may also include indium.
- the p-type Group III nitride layer including aluminum may also include indium.
- the light emitting devices include a silicon carbide substrate disposed between the first contact and the n-type Group III nitride layer.
- Some embodiments of the present invention provide light emitting devices and methods of fabricating light emitting devices that include an n-type gallium nitride based layer on a substrate, a gallium nitride based active region on the n-type gallium nitride based layer and include at least one quantum well structure, a gallium nitride based layer including indium on the active region, a p-type gallium nitride based layer including aluminum on the gallium nitride based layer including indium, a first contact on the n-type gallium nitride based layer and a second contact on the p-type gallium nitride based layer.
- the n-type gallium nitride layer includes an n-type AlGaN layer on the substrate and an n-type GaN layer on the n-type AlGaN layer.
- the gallium nitride based active region may include a plurality of InGaN/GaN quantum wells.
- the p-type gallium nitride based layer includes a p-type AlGaN layer on the gallium nitride based layer including indium and a p-type GaN layer on the p-type AlGaN layer.
- the second contact is on the p-type GaN layer.
- the gallium nitride based layer including indium may include a first layer of In x AI y Ga !-x-y N, where 0 ⁇ x ⁇ 0.2 and 0 ⁇ y ⁇ 0.4 and a second layer of fti w Al z Gai -w-z N, where 0 ⁇ w ⁇ 0.2 and y ⁇ z ⁇ l .
- the first layer may have a thickness of from about 10 to about 200 A and the second layer may have a thickness of from about 10 to about 120 A.
- the substrate is a silicon carbide substrate and the first contact is on the silicon carbide substrate opposite the n-type AlGaN layer.
- Figure 1 is a schematic illustration of a Group III nitride light emitting diode incorporating embodiments of the present invention
- Figure 2 is a schematic illustration of a Group III nitride light emitting diode incorporating further embodiments of the present invention
- Figure 3 is a schematic illustration of a quantum, well .structure and. a multi- ._ quantum well structure according to additional embodiments of the present invention.
- Figure 4 is a schematic illustration of a Group III nitride light emitting diode incorporating further embodiments of the present invention.
- first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
- relative terms such as “lower” or “bottom” and “iipper” or “top,” may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending of the particular orientation of the figure.
- Embodiments of the present invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, variations from the. shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated or described as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present invention.
- LEDs disclosed herein include a substrate
- the crystalline epitaxial growth substrate on which the epitaxial layers comprising an LED are grown may be removed, and the freestanding epitaxial layers may be mounted on a substitute carrier substrate or submount which may have better thermal, electrical, structural and/or optical characteristics than the original substrate.
- the invention described herein is not limited to structures having crystalline epitaxial growth substrates and may be utilized in connection with structures in which the epitaxial layers have been removed from their original growth substrates and bonded to substitute carrier substrates.
- Embodiments of the present invention will be described with reference to Figure 1 that illustrates a light emitting diode (LED) structure 40.
- LED light emitting diode
- the LED structure 40 of Figure 1 includes a substrate 10, which is preferably 4H or 6H n-type silicon carbide.
- Substrate 10 may also comprise sapphire, bulk gallium nitride or another suitable substrate.
- a layered semiconductor structure comprising gallium nitride-based semiconductor layers on substrate 10. Namely, the LED structure 40 illustrated includes the following layers:, .
- a conductive buffer layer 11 a first silicon-doped GaN layer 12, a second silicon doped GaN layer 14, a superlattice structure 16 comprising alternating layers of silicon-doped GaN and/or InGaN, an active region 18, which may be provided by a multi-quantum well structure, an undoped GaN and/or AlGaN layer 22, an AlGaN layer 30 doped with a p-type impurity, and a GaN contact layer 32, also doped with a p-type impurity.
- the structure further includes an n-type ohmic contact 23 on the substrate 10 and a p-type ohmic contact 24 on the contact layer 32.
- Buffer layer 11 is preferably n-type AlGaN.
- buffer layers between silicon carbide and group Ill-nitride materials are provided in U.S. Patents 5,393,993 and 5,523,589, and U.S. Application Serial No. 09/154,363 entitled "Vertical Geometry InGaN Light Emitting Diode” assigned to the assignee of the present invention, the disclosures of which are incorporated by reference as if fully set forth herein.
- embodiments of the present invention may also include structures such as those described in United States Patent No. 6,201,262 entitled “Group III Nitride Photonic Devices on Silicon Carbide Substrates With Conductive Buffer Interlay Structure," the disclosure of which is incorporated herein by reference as if set forth fully herein.
- GaN layer 12 is preferably between about 500 and 4000 nm thick inclusive and is most preferably about 1500 nm thick. GaN layer 12 may be doped with silicon at a level of about 5xlO 17 to 5xlO 18 cm "3 . GaN layer 14 is preferably between about 10 and 500 A thick inclusive, and is most preferably about 80 A thick. GaN layer 14 maybe doped with silicon at a level of less than about 5xlO 19 cm "3 .
- a superlattice structure 16 includes alternating layers of In ⁇ Gai- ⁇ N and InyGaj-yN, wherein X is between 0 and 1 inclusive and X is not equal to Y.
- the superlattice structure 16 may include from about 5 to about 50 periods (where one period equals one repetition each of the In ⁇ Gai_ ⁇ N and In ⁇ Gai. ⁇ N layers that comprise the superlattice). In one embodiment, the superlattice structure 16 comprises 25 periods. In another embodiment, the superlattice structure 16 comprises 10 periods. The number of periods, however, may be decreased by, for example, increasing the thickness of the respective layers. Thus, for example, doubling the thickness of the layers may be utilized with half the number of periods. Alternatively, the number and thickness of the periods may be independent of one another.
- the superlattice 16 is doped with an n-type impurity such as silicon at a level of from about 1x10 17 cm “3 to about 5xlO 19 cm “"3 .
- a doping level may be actual doping or average doping of the layers of the superlattice 16. If such doping level is an average doping level, then it may be beneficial to provide doped layers adjacent the superlattice structure 16 that provide the desired average doping which the doping of the adjacent layers is averaged over the adjacent layers and the superlattice structure 16.
- a better surface may be provided on which to grow InGaN-based active region 18.
- strain effects in the superlattice structure 16 provide a growth surface that is conducive to the growth of a high-quality InGaN-containing active region. Further, the superlattice is known to influence the operating voltage of the device. Appropriate choice of superlattice thickness and composition parameters can reduce operating voltage and increase optical efficiency.
- the superlattice structure 16 may be grown in an atmosphere of nitrogen or other gas, which enables growth of higher-quality LiGaN layers in the structure.
- a silicon-doped InGaN/GaN superlattice on a silicon-doped GaN layer in a nitrogen atmosphere By growing a structure having improved crystallinity and conductivity with optimized strain may be realized.
- the active region 18 may comprise a single or multi-quantum well structure as well as single or double heteroj unction active regions.
- the active region 18 comprises a multi-quantum well structure that includes multiple InGaN quantum well layers separated by barrier layers (not shown in Figure 1).
- Layer 22 is provided on active region 18 and is preferably undoped GaN or AlGaN between about 0 and 120 A thick inclusive. As used herein, undoped refers to a not intentionally doped. Layer 22 is preferably about 35 A thick. If layer 22 comprises AlGaN, the aluminum percentage in such layer is preferably about 10-30% and most preferably about 24%. The level of aluminum in layer 22 may also be graded in a stepwise or continuously decreasing fashion.. Layer 22 maybe grown at a. higher temperature than the growth temperatures in quantum well region 25 in order to improve the crystal quality of layer 22. Additional layers of undoped GaN or
- AlGaN may be included in the vicinity of layer 22.
- LED 1 may include an additional layer of undoped AlGaN about 6-9A thick between the active region 18 and the layer 22.
- An AlGaN layer 30 doped with a p-type impurity such as magnesium is provided on layer 22.
- the AlGaN layer 30 may be between about 0 and 300 A thick inclusive and is preferably about 130 A thick.
- a contact layer 32 of p-type GaN is provided on the layer 30 and is preferably about 1800 A thick.
- Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 and the substrate 10, respectively.
- Figure 2 illustrates further embodiments of the present invention incorporating a multi-quantum well active region.
- the embodiments of the present invention illustrated in Figure 2 include a layered semiconductor structure 100 comprising gallium nitride-based semiconductor layers grown on a substrate 10.
- the substrate 10 may be SiC, sapphire or bulk gallium nitride.
- LEDs may include a conductive buffer layer 11, a first silicon-doped GaN layer 12, a second silicon doped GaN layer 14, a superlattice structure 16 comprising alternating layers of silicon-doped GaN and/or InGaN, an active region 125 comprising a multi-quantum well structure, an undoped GaN or AlGaN layer 22, an AlGaN layer 30 doped with a p-type impurity, and a GaN contact layer 32, also doped with a p-type impurity.
- the LEDs may further include an n-type ohmic contact 23 on the substrate 10 and a p-type ohmic contact 24 on the contact layer 32. In embodiments of the present invention where the substrate 10 is sapphire, the n-type ohmic contact 23 would be provided on n-type GaN layer 12 and/or n-type GaN layer 14.
- buffer layer 11 is preferably n- type AlGaN.
- GaN layer 12 is preferably between about 500 and 4000 nm thick inclusive and is most preferably about 1500 nm thick.
- GaN layer 12 may be doped with silicon at a level of about 5xlO 17 to 5xlO 18 cm "3 .
- GaN layer 14 is preferably between about 10 and 500 A thick inclusive, and is most preferably about 80 A thick.
- GaN layer 14 may be doped with silicon at a level of less than about 5xlO. 19 cm "3 .
- the superlattice structure 16 may also be provided as described ..above . with reference to Figure 1.
- the active region 125 comprises a multi-quantum well structure that includes multiple InGaN quantum well layers 120 separated by barrier layers 118.
- the barrier layers 118 comprise In ⁇ Gai_ ⁇ N where 0 ⁇ X ⁇ l .
- the indium composition of the barrier layers 118 is less than that of the quantum well layers 120, so that the barrier layers 118 have a higher bandgap than quantum well layers 120.
- the barrier layers 118 and quantum well layers 120 may be undoped (i.e. not intentionally doped with an impurity atom such as silicon or magnesium). However, it may be desirable to dope the barrier layers 118 with Si at a level of less than 5x10 19 cm "3 , particularly if ultraviolet emission is desired. .
- the barrier layers 118 comprise Al ⁇ In ⁇ Gai -x- ⁇ N where 0 ⁇ X ⁇ l, 0 ⁇ Y ⁇ l and X+Y ⁇ 1.
- the barrier layers 118 may be lattice- matched to the quantum well layers 120, thereby providing improved crystalline quality in the quantum well layers 120, which increases the luminescent efficiency of the device.
- an active region 225 comprises a periodically repeating structure 221 comprising a well support layer 218a having high crystal quality, a quantum well layer 220 and a cap layer 218b that serves as a protective cap layer for the quantum well layer 220.
- the cap layer 218b and the well support layer 218a together form the barrier layer between adjacent quantum wells 220.
- the high quality well support layer 218a is grown at a higher temperature than that used to grow the InGaN quantum well layer 220.
- the well support layer 218a is grown at a slower growth rate than the cap layer 218b.
- lower growth rates may be used during the lower temperature growth process and higher growth rates utilized during the higher temperature growth process.
- the well support layer 218a may be grown at a growth temperature of between about 700 and 900- 0 C. -Then, the temperature of the growth chamber is lowered by from about 0 to about 200 0 C to permit growth of the high-quality InGaN quantum well layer 220.
- the cap layer .218b is grown. In that manner, a multi-quantum well region comprising high quality InGaN layers may be fabricated.
- the active regions 125 and 225 of Figures 2 and 3 are preferably grown in a nitrogen atmosphere, which may provide increased InGaN crystal quality.
- the barrier layers 118, the well support layers 218a and/or the cap layers 218b may be between about 50 - 400 A thick inclusive.
- the combined thickness of corresponding ones of the well support layers 218a and the cap layers 218b may be from- about 50-400 A thick inclusive.
- the barrier layers 118 the well support layers 218a and/or the cap layers 218b are greater than about 90 A thick and most preferably are about 225 A thick. Also, it is preferred that the well support layers 218a be thicker than the cap layers 218b. Thus, the cap layers 218b are preferably as thin as possible while still reducing the desorption of Indium from or the degradation of the quantum well layers 220.
- the quantum well layers 120 and 220 may be between about 10 - 50 A thick inclusive.
- the quantum well layers 120 and 220 are greater than 20 A thick and most preferably are about 25 A thick.
- the thickness and percentage of indium in the quantum well layers 120 and 220 may be varied to produce light having a desired wavelength. Typically, the percentage of indium in quantum well layers 120 and 220 is about 25-30%, however, depending on the desired wavelength, the percentage of indium has been varied from about 5% to about 50%.
- the bandgap of the superlattice structure 16 exceeds the bandgap of the quantum well layers 120. This may be achieved by by adjusting the average percentage of indium in the superlattice 16.
- the thickness (or period) of the superlattice layers and the average Indium percentage of the layers should be chosen such that the bandgap of the superlattice structure 16 is greater than the bandgap of the quantum wells 120.
- the bandgap of the superlattice structure 16 may be from about 2.95 eV to about 3.35 eV. In a preferred embodiment, the bandgap of the superlattice structure 16 is about 3.15 eV. .
- the LED structure illustrated in Figure 2 includes a spacer layer 17 disposed between the superlattice 16 and the active region 125.
- the spacer layer 17 preferably comprises undoped GaN.
- the presence of the optional spacer layer 17 between the doped superlattice 16 and active region 125 may deter silicon impurities from becoming incorporated into the active region 125. This, in turn, may improve the material quality of the active region 125 that provides more consistent device performance and better uniformity.
- a spacer layer may also be provided in the LED structure illustrated in Figure 1 between the superlattice 16 and the active region 18.
- the layer 22 may be provided on the active region 125 and is preferably undoped GaN or AlGaN between about 0 and 120 A thick inclusive.
- the layer 22 is preferably about 35 A thick. If the layer 22 comprises AlGaN, the aluminum percentage in such layer is preferably about 10-30% and most preferably about 24%.
- the level of aluminum in the layer 22 may also be graded in a stepwise or continuously decreasing fashion.
- the layer 22 may be grown at a higher temperature than the growth temperatures in the active region 125 in order to improve the crystal quality of the layer 22. Additional layers of undoped GaN or AlGaN may be included in the vicinity of layer 22.
- the LED illustrated in Figure 2 may include an additional layer of undoped AlGaN about 6-9A thick between the active regions 125 and the layer 22.
- An AlGaN layer 30 doped with a p-type impurity such as magnesium is provided on layer 22.
- the AlGaN layer 30 may be between about 0 and 300 A thick inclusive and is preferably about 130 A thick.
- a contact layer 32 of p-type GaN is provided on the layer 30 and is preferably about 1800 A thick.
- Ohmic contacts 24 * and 25 are provided on the p-GaN contact layer 32 and the substrate 10, respectively.
- Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 and the substrate 10, respectively.
- Figure 4 illustrates further embodiments of the present invention incorporating a Group Ill-nitride layer incorporating Indium on the active region of the device.
- an InAlGaN cap structure may be provided.
- the embodiments of the present invention illustrated in Figure 4 include a layered semiconductor structure 400 comprising gallium nitride-based semiconductor layers grown on a substrate 10.
- the substrate 10 may be SiC, sapphire or, bulk gallium nitride., .
- the substrate 10 is a SiC substrate having a thickness of from about 50 to about 800 ⁇ m and in some embodiments, about 100 ⁇ m.
- LEDs may include a conductive buffer layer 11, a first silicon-doped GaN layer 12, a second silicon doped GaN layer 14, a superlattice structure 16 comprising alternating layers of silicon-doped GaN and/or InGaN, an active region 125 comprising a multi-quantum well structure, an undoped AlInGaN layer 40, an AlGaN layer 30 doped with a p-type impurity, and a GaN contact layer 32, also doped with a p-type impurity.
- the LEDs may further include an n-type ohmic contact 23 on the substrate 10 and a p-type ohmic contact 24 on the contact layer 32. In embodiments of the present invention where the substrate 10 is sapphire, the n-type ohmic contact 23 would be provided on n-type GaN layer 12 and/or n-type GaN layer 14.
- the buffer layer 11 may be n-type AlGaN.
- the buffer layer 11 may be AlGaN doped with Si and having a thickness of from about 100 to about 10.000 A. In certain embodiments the thickness is about 1500 A.
- the GaN layer 12 may be doped with Si and may have a thickness of from about 5000 to 50,000 A thick inclusive and, in particular embodiments, is about 18,000 A thick.
- the GaN layer 12 maybe doped with silicon at a level of about 5x10 17 to 5x10 18 cm "3 .
- the superlattice structure 16 may also be provided as described above with reference to Figure 1.
- the superlattice structure 16 may have from 3 to 35 periods of InGaN/GaN.
- the thickness of the periods may be from about 30 to about 100 A.
- twenty five (25) periods of InGaN/GaN are provided with the thickness of a period of layers being about 70 A and the thickness of the GaN or InGaN layer being about 15 A with the other layer making up the remainder.
- the active region 325 may include a multi-quantum well structure that includes multiple InGaN quantum well layers 320 separated by barrier layers 318.
- the barrier layers 318 comprise In ⁇ Gai_ ⁇ N where 0 ⁇ X ⁇ l .
- the indium composition of the barrier layers 318 is less than that of the quantum well layers 320, so that the barrier layers 318 have a higher bandgap than 1 quantum well layers 320.
- the barrier layers 318 and quantum well layers 320 may be undoped (i.e. not intentionally doped with an impurity atom such as silicon or magnesium). However, it may be desirable to dope the barrier layers 318 with Si at a level of less than 5x10 19 cm " , particularly if ultraviolet emission is desired.
- the barrier layers 318 comprise Al ⁇ In ⁇ Gai. ⁇ . ⁇ N where 0 ⁇ X ⁇ l , 0 ⁇ Y ⁇ l and X+Y ⁇ 1.
- the barrier layers 318 may be lattice- matched to the quantum well layers 320, thereby allowing improved crystalline quality in the quantum well layers 320, which can increase the luminescent efficiency of the device.
- the active region 325 may also be provided as illustrated in Figure 3 and described above with reference to Figures 1 through 3.
- the active region 325 includes 3 or more quantum wells and in- ⁇ certain embodiments, eight (8) quantum wells are provided.
- the thickness of the quantum well structures may be from about 30 to about 250 A.
- the thickness of a quantum well structure may be about 120 A with the thickness of the well layer being about 25 A.
- the LED structure illustrated in Figure 4 may also include a spacer layer disposed between the superlattice 16 and the active region 325 as described above.
- a Group Ill-nitride capping layer 40 that includes Indium may be provided on the active region 325 and, more specifically, on the quantum well 320 of the active region 325.
- the Group Ill-nitride capping layer 40 may include InAlGaN between about 10 and 320 A thick inclusive.
- the capping layer 40 may be of uniform composition, multiple layers of different compositions and/or graded composition.
- the capping layer 40 includes a first capping layer having a composition of In x AIy Gai -X _ y N, where 0 ⁇ x ⁇ 0.2 and 0 ⁇ y ⁇ 0.4 and has a thickness of from about 10 to about 200 A and a second capping layer having a composition, of In w Al z Gai_ w-z N, where 0 ⁇ w ⁇ 0.2 and y ⁇ z ⁇ l and has a thickness of from about 10 to about 120 A.
- the capping layer 40 may be grown at a higher temperature than the growth temperatures in the active region 325 in order to improve the crystal quality of the layer 40. Additional layers of undoped GaN or AlGaN may be included in the vicinity of layer 40. For example, a thin layer of GaN may be provided between a last quantum well layer and the. capping layer 40.
- the capping Layer 40. . that includes indium may be more closely lattice matched to the quantum wells of the active region 325 and may provide a transition from the lattice structure of the active region 325 to the lattice structure of the p-type layers. Such a structure may result in increased brightness of the device.
- An AlGaN hole injection layer 42 doped with a p-type impurity such as magnesium is provided on the capping layer 40.
- the AlGaN layer 42 may be between about 50 and 2500 A thick inclusive and, in particular embodiments, is about 150 A thick.
- the AlGaN layer 42 may be doped with Mg. In some embodiments of the present invention, the layer 42 may also include Indium. •
- a contact layer 32 of p-type GaN is provided on the layer 42 and may be from about 250 to abut 10,000 A thick and in some embodiments, about 1500 A thick.
- the contact layer 32 may also include Indium.
- Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 and the substrate 10, respectively.
- Ohmic contacts 24 and 25 are provided on the p-GaN contact layer 32 and the substrate 10, respectively.
- the indium containing capping layer 40 may be provided in light emitting devices as described, for example, in United States Provisional Patent Application Serial No. (Attorney Docket No. 5308-463PR) entitled "ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES" and filed concurrently herewith, United States Patent
- Electroluminescence (EL) testing was performed on LED wafers having devices with and without the indium containing capping layer, in particular, an InAlGaN capping layer, as illustrated in Figure 4.
- the EL test is an on-wafer test that measures the brightness of LED epitaxial structures. This test is not influenced by the LED fabrication method, chip shaping, or packaging method. Approximately 176 wafers with the structure including the indium containing layer and 615 wafers without the indium containing layer were tested. Both structures were grown continuously on a number of reactors. The reactors were all essentially the same (i.e.
- the data from the wafers was binned and shows that the structure with the indium containing layer was approximately 1.15 to 1.25 times brighter than the structure without the indium containing layer.
- a light emitting diode may be provided with a single occurrence of the structure 221 of Figure 3 as the active region of the device.
- the number of quantum wells will typically range from 1 to 10 quantum wells.
- embodiments of the present invention have been described with reference to gallium nitride based devices, the teachings and benefits of the present invention may also be provided in other Group III nitrides.
- embodiments of the present invention provide Group III nitride based superlattice structures, quantum well structures and/or Group III nitride based light emitting diodes having superlattices and/or quantum wells.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007523569A JP2008508720A (en) | 2004-07-27 | 2005-06-24 | Group III nitride-based quantum well light-emitting device structure with a capping structure containing indium |
EP10180328.6A EP2259342B1 (en) | 2004-07-27 | 2005-06-24 | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
KR1020137005591A KR101363826B1 (en) | 2004-07-27 | 2005-06-24 | Group ⅲ nitride based semiconductor device |
EP05784977A EP1771894B1 (en) | 2004-07-27 | 2005-06-24 | Group iii nitride based quantum well light emitting device structures with an indium containing capping structure |
KR1020117021897A KR101388369B1 (en) | 2004-07-27 | 2005-06-24 | Group ⅲ nitride based light emitting diode |
CA2567739A CA2567739C (en) | 2004-07-27 | 2005-06-24 | Group iii nitride based quantum well light emitting device structures with an indium containing capping structure |
EP10180325.2A EP2259341B1 (en) | 2004-07-27 | 2005-06-24 | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
KR1020077001904A KR101236063B1 (en) | 2004-07-27 | 2005-06-24 | Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/899,791 | 2004-07-27 | ||
US10/899,791 US7692182B2 (en) | 2001-05-30 | 2004-07-27 | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006023060A2 true WO2006023060A2 (en) | 2006-03-02 |
WO2006023060A3 WO2006023060A3 (en) | 2006-04-13 |
Family
ID=35115753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/022597 WO2006023060A2 (en) | 2004-07-27 | 2005-06-24 | Group iii nitride based quantum well light emitting device structures with an indium containing capping structure |
Country Status (8)
Country | Link |
---|---|
US (1) | US7692182B2 (en) |
EP (5) | EP1771894B1 (en) |
JP (2) | JP2008508720A (en) |
KR (4) | KR101236063B1 (en) |
CN (1) | CN101006590A (en) |
CA (1) | CA2567739C (en) |
TW (2) | TWI394288B (en) |
WO (1) | WO2006023060A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101636850A (en) * | 2006-12-22 | 2010-01-27 | 皇家飞利浦电子股份有限公司 | III-nitride light emitting devices grown on templates to reduce strain |
JP2011501408A (en) * | 2007-10-12 | 2011-01-06 | エイジェンシー フォア サイエンス テクノロジー アンド リサーチ | Fabrication of red and white nitride based LEDs without phosphors |
JP5136765B2 (en) * | 2005-05-02 | 2013-02-06 | 日亜化学工業株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
US8963176B2 (en) | 2010-03-08 | 2015-02-24 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
US9252325B2 (en) | 2012-12-04 | 2016-02-02 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor light-emitting device |
US9570656B2 (en) | 2013-09-25 | 2017-02-14 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
AU2003258919A1 (en) * | 2002-06-26 | 2004-01-19 | Ammono Sp.Zo.O. | Nitride semiconductor laser device and a method for improving its performance |
US7557380B2 (en) * | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
WO2006035852A2 (en) * | 2004-09-28 | 2006-04-06 | Sumitomo Chemical Company, Limited | A group iii-v compound semiconductor and a method for producing the same |
US7446345B2 (en) * | 2005-04-29 | 2008-11-04 | Cree, Inc. | Light emitting devices with active layers that extend into opened pits |
US20060289891A1 (en) * | 2005-06-28 | 2006-12-28 | Hutchins Edward L | Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures |
DE102005037022A1 (en) * | 2005-06-28 | 2007-01-04 | Osram Opto Semiconductors Gmbh | Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier |
CN101449393A (en) * | 2006-05-26 | 2009-06-03 | 罗姆股份有限公司 | A nitride semiconductor luminous element |
DE102006025964A1 (en) * | 2006-06-02 | 2007-12-06 | Osram Opto Semiconductors Gmbh | Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component |
PL1883119T3 (en) * | 2006-07-27 | 2016-04-29 | Osram Opto Semiconductors Gmbh | Semiconductor layer structure with overlay grid |
EP1883140B1 (en) * | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD or LED with superlattice clad layer and graded doping |
EP1883141B1 (en) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD or LED with superlattice cladding layer |
JP4948134B2 (en) * | 2006-11-22 | 2012-06-06 | シャープ株式会社 | Nitride semiconductor light emitting device |
US8026517B2 (en) * | 2007-05-10 | 2011-09-27 | Industrial Technology Research Institute | Semiconductor structures |
DE102007031926A1 (en) * | 2007-07-09 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body |
KR100838196B1 (en) * | 2007-07-20 | 2008-06-13 | 서울옵토디바이스주식회사 | Light emitting diode with improved structre |
KR20100064383A (en) | 2007-09-19 | 2010-06-14 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | (al, in, ga, b)n device structures on a patterned substrate |
KR100961109B1 (en) * | 2008-02-11 | 2010-06-07 | 삼성엘이디 주식회사 | GaN-based semiconductor light emitting device |
KR101017396B1 (en) * | 2008-08-20 | 2011-02-28 | 서울옵토디바이스주식회사 | Light emitting diode having modulation doped layer |
CN101488550B (en) * | 2009-02-27 | 2010-10-13 | 上海蓝光科技有限公司 | Manufacturing method for LED in high In ingredient multiple InGaN/GaN quantum wells structure |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
EP2523228B1 (en) * | 2010-01-05 | 2017-04-26 | Seoul Viosys Co., Ltd | Light emitting diode |
US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
CA2814119C (en) | 2010-10-12 | 2017-01-17 | Alliance For Sustainable Energy, Llc | High bandgap iii-v alloys for high efficiency optoelectronics |
US9496454B2 (en) * | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
US9263636B2 (en) | 2011-05-04 | 2016-02-16 | Cree, Inc. | Light-emitting diode (LED) for achieving an asymmetric light output |
JP5598437B2 (en) * | 2011-07-12 | 2014-10-01 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device manufacturing method |
US8648384B2 (en) * | 2011-07-25 | 2014-02-11 | Lg Innotek Co., Ltd. | Light emitting device |
JP5762901B2 (en) * | 2011-09-15 | 2015-08-12 | 株式会社東芝 | Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer |
US8957440B2 (en) | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
JP2012060170A (en) * | 2011-12-16 | 2012-03-22 | Toshiba Corp | Semiconductor light-emitting element and method for manufacturing the same |
KR20130078345A (en) * | 2011-12-30 | 2013-07-10 | 일진엘이디(주) | Nitride based light emitting device with excellent light efficiency using strain buffer layer |
KR20130079873A (en) * | 2012-01-03 | 2013-07-11 | 엘지이노텍 주식회사 | Light emitting device and lighting system including the same |
WO2013170016A1 (en) * | 2012-05-09 | 2013-11-14 | The Regents Of The University Of California | Light-emitting diodes with low temperature dependence |
US8814376B2 (en) | 2012-09-26 | 2014-08-26 | Apogee Translite, Inc. | Lighting devices |
KR101936312B1 (en) * | 2012-10-09 | 2019-01-08 | 엘지이노텍 주식회사 | Light emitting device |
JP5726836B2 (en) * | 2012-11-02 | 2015-06-03 | 株式会社東芝 | Semiconductor light emitting device |
US9182091B2 (en) | 2012-12-14 | 2015-11-10 | Remphos Technologies Llc | LED panel light fixture |
US8882298B2 (en) | 2012-12-14 | 2014-11-11 | Remphos Technologies Llc | LED module for light distribution |
CN103107256B (en) * | 2012-12-21 | 2016-03-30 | 湘能华磊光电股份有限公司 | A kind of LED |
CN103187497B (en) * | 2013-01-28 | 2015-11-25 | 上海博恩世通光电股份有限公司 | A kind of epitaxial structure and growing method thereof improving large size chip light efficiency |
JP5928366B2 (en) * | 2013-02-13 | 2016-06-01 | 豊田合成株式会社 | Method for producing group III nitride semiconductor |
CN103236477B (en) * | 2013-04-19 | 2015-08-12 | 安徽三安光电有限公司 | A kind of LED epitaxial structure and preparation method thereof |
US10753558B2 (en) | 2013-07-05 | 2020-08-25 | DMF, Inc. | Lighting apparatus and methods |
US9964266B2 (en) | 2013-07-05 | 2018-05-08 | DMF, Inc. | Unified driver and light source assembly for recessed lighting |
US10551044B2 (en) | 2015-11-16 | 2020-02-04 | DMF, Inc. | Recessed lighting assembly |
US10563850B2 (en) | 2015-04-22 | 2020-02-18 | DMF, Inc. | Outer casing for a recessed lighting fixture |
US11435064B1 (en) | 2013-07-05 | 2022-09-06 | DMF, Inc. | Integrated lighting module |
US11255497B2 (en) | 2013-07-05 | 2022-02-22 | DMF, Inc. | Adjustable electrical apparatus with hangar bars for installation in a building |
US11060705B1 (en) | 2013-07-05 | 2021-07-13 | DMF, Inc. | Compact lighting apparatus with AC to DC converter and integrated electrical connector |
US10139059B2 (en) | 2014-02-18 | 2018-11-27 | DMF, Inc. | Adjustable compact recessed lighting assembly with hangar bars |
US9660133B2 (en) | 2013-09-23 | 2017-05-23 | Sensor Electronic Technology, Inc. | Group III nitride heterostructure for optoelectronic device |
CN103872197B (en) * | 2014-03-20 | 2017-07-11 | 西安神光皓瑞光电科技有限公司 | A kind of epitaxial growth method for lifting GaN base LED chip antistatic effect |
TWI550902B (en) * | 2014-04-02 | 2016-09-21 | 國立交通大學 | Light emitting diode device |
US10797204B2 (en) | 2014-05-30 | 2020-10-06 | Cree, Inc. | Submount based light emitter components and methods |
TW201603315A (en) * | 2014-07-14 | 2016-01-16 | 晶元光電股份有限公司 | Light-emitting device |
KR102237111B1 (en) * | 2014-07-28 | 2021-04-08 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
CN104319321B (en) * | 2014-10-27 | 2017-02-08 | 苏州新纳晶光电有限公司 | Intermittent-annealing isothermal-growth multi-quantum well LED extension structure and manufacturing method thereof |
US9985168B1 (en) | 2014-11-18 | 2018-05-29 | Cree, Inc. | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers |
KR101622097B1 (en) * | 2014-12-01 | 2016-05-18 | 전북대학교산학협력단 | Nitride semiconductor light emitting diode and fabrication method thereof |
CN104659170B (en) * | 2015-01-29 | 2019-01-18 | 华灿光电(苏州)有限公司 | A kind of LED epitaxial slice and preparation method thereof |
EP3289281A1 (en) | 2015-04-30 | 2018-03-07 | Cree, Inc. | Solid state lighting components |
JP2016219547A (en) * | 2015-05-18 | 2016-12-22 | ローム株式会社 | Semiconductor light emitting element |
CA3102022C (en) | 2015-05-29 | 2023-04-25 | DMF, Inc. | Lighting module for recessed lighting systems |
KR101713426B1 (en) * | 2015-07-24 | 2017-03-08 | 전남대학교산학협력단 | Light emitting diode and method for fabricating thereof |
USD851046S1 (en) | 2015-10-05 | 2019-06-11 | DMF, Inc. | Electrical Junction Box |
DE102016117477A1 (en) | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence |
KR101996424B1 (en) * | 2017-04-24 | 2019-07-04 | 아주대학교산학협력단 | Laser diode and manufacturing method thereof |
WO2018237294A2 (en) | 2017-06-22 | 2018-12-27 | DMF, Inc. | Thin profile surface mount lighting apparatus |
US10488000B2 (en) | 2017-06-22 | 2019-11-26 | DMF, Inc. | Thin profile surface mount lighting apparatus |
USD905327S1 (en) | 2018-05-17 | 2020-12-15 | DMF, Inc. | Light fixture |
US11067231B2 (en) | 2017-08-28 | 2021-07-20 | DMF, Inc. | Alternate junction box and arrangement for lighting apparatus |
WO2019108667A1 (en) | 2017-11-28 | 2019-06-06 | Dmf. Inc. | Adjustable hanger bar assembly |
CA3087187A1 (en) | 2017-12-27 | 2019-07-04 | DMF, Inc. | Methods and apparatus for adjusting a luminaire |
FR3078442B1 (en) * | 2018-02-26 | 2023-02-10 | Valeo Vision | ELECTRO-LUMINESCENT LIGHT SOURCE INTENDED TO BE POWERED BY A VOLTAGE SOURCE |
USD877957S1 (en) | 2018-05-24 | 2020-03-10 | DMF Inc. | Light fixture |
WO2019241198A1 (en) | 2018-06-11 | 2019-12-19 | DMF, Inc. | A polymer housing for a recessed lighting system and methods for using same |
USD903605S1 (en) | 2018-06-12 | 2020-12-01 | DMF, Inc. | Plastic deep electrical junction box |
US11393948B2 (en) | 2018-08-31 | 2022-07-19 | Creeled, Inc. | Group III nitride LED structures with improved electrical performance |
CA3115146A1 (en) | 2018-10-02 | 2020-04-09 | Ver Lighting Llc | A bar hanger assembly with mating telescoping bars |
USD901398S1 (en) | 2019-01-29 | 2020-11-10 | DMF, Inc. | Plastic deep electrical junction box |
USD864877S1 (en) | 2019-01-29 | 2019-10-29 | DMF, Inc. | Plastic deep electrical junction box with a lighting module mounting yoke |
USD1012864S1 (en) | 2019-01-29 | 2024-01-30 | DMF, Inc. | Portion of a plastic deep electrical junction box |
USD966877S1 (en) | 2019-03-14 | 2022-10-18 | Ver Lighting Llc | Hanger bar for a hanger bar assembly |
WO2021051101A1 (en) | 2019-09-12 | 2021-03-18 | DMF, Inc. | Miniature lighting module and lighting fixtures using same |
US11557695B2 (en) | 2020-02-04 | 2023-01-17 | Seoul Viosys Co., Ltd. | Single chip multi band LED |
US12095001B2 (en) | 2020-04-16 | 2024-09-17 | Seoul Viosys Co., Ltd. | Single chip multi band LED |
US11621370B2 (en) | 2020-06-19 | 2023-04-04 | Seoul Viosys Co., Ltd. | Single chip multi band led and application thereof |
USD990030S1 (en) | 2020-07-17 | 2023-06-20 | DMF, Inc. | Housing for a lighting system |
CA3124976A1 (en) | 2020-07-17 | 2022-01-17 | DMF, Inc. | Polymer housing for a lighting system and methods for using same |
US11585517B2 (en) | 2020-07-23 | 2023-02-21 | DMF, Inc. | Lighting module having field-replaceable optics, improved cooling, and tool-less mounting features |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US604646A (en) * | 1898-05-24 | Liams | ||
US615389A (en) * | 1898-12-06 | Wristlet | ||
JPH0614564B2 (en) * | 1987-07-13 | 1994-02-23 | 日本電信電話株式会社 | Semiconductor light emitting element |
US5351255A (en) | 1992-05-12 | 1994-09-27 | North Carolina State University Of Raleigh | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
US5818072A (en) | 1992-05-12 | 1998-10-06 | North Carolina State University | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
US5323022A (en) | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
JP2932467B2 (en) | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
JP2932468B2 (en) | 1993-12-10 | 1999-08-09 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JP2800666B2 (en) | 1993-12-17 | 1998-09-21 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor laser device |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6005258A (en) * | 1994-03-22 | 1999-12-21 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities |
JP2956489B2 (en) | 1994-06-24 | 1999-10-04 | 日亜化学工業株式会社 | Crystal growth method of gallium nitride based compound semiconductor |
JP2890390B2 (en) | 1994-07-06 | 1999-05-10 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JP2790242B2 (en) | 1994-10-07 | 1998-08-27 | 日亜化学工業株式会社 | Nitride semiconductor light emitting diode |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JP2921746B2 (en) | 1995-01-31 | 1999-07-19 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
US5585648A (en) | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US5661074A (en) | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JP2890396B2 (en) | 1995-03-27 | 1999-05-10 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
JP3135041B2 (en) | 1995-09-29 | 2001-02-13 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP2900990B2 (en) | 1995-11-24 | 1999-06-02 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP2891348B2 (en) | 1995-11-24 | 1999-05-17 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
JP3371830B2 (en) | 1995-11-24 | 2003-01-27 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3298390B2 (en) | 1995-12-11 | 2002-07-02 | 日亜化学工業株式会社 | Method for manufacturing nitride semiconductor multicolor light emitting device |
JP3635757B2 (en) * | 1995-12-28 | 2005-04-06 | 昭和電工株式会社 | AlGaInP light emitting diode |
US5874747A (en) | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JP3336855B2 (en) * | 1996-03-27 | 2002-10-21 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
JP3314620B2 (en) * | 1996-04-11 | 2002-08-12 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3366188B2 (en) | 1996-05-21 | 2003-01-14 | 日亜化学工業株式会社 | Nitride semiconductor device |
JPH1012969A (en) | 1996-06-19 | 1998-01-16 | Nichia Chem Ind Ltd | Nitride semiconductor laser element |
US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JPH1065271A (en) | 1996-08-13 | 1998-03-06 | Toshiba Corp | Gallium nitride based semiconductor light-emitting element |
JP3660446B2 (en) | 1996-11-07 | 2005-06-15 | 日亜化学工業株式会社 | Nitride semiconductor device and manufacturing method thereof |
JP3424465B2 (en) | 1996-11-15 | 2003-07-07 | 日亜化学工業株式会社 | Nitride semiconductor device and method of growing nitride semiconductor |
JP3374737B2 (en) | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | Nitride semiconductor device |
CN1297016C (en) | 1997-01-09 | 2007-01-24 | 日亚化学工业株式会社 | Nitride semiconductor device |
JPH10209569A (en) | 1997-01-16 | 1998-08-07 | Hewlett Packard Co <Hp> | P-type nitride semiconductor device and its manufacture |
WO1998047170A1 (en) | 1997-04-11 | 1998-10-22 | Nichia Chemical Industries, Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
JP3642157B2 (en) | 1997-05-26 | 2005-04-27 | ソニー株式会社 | P-type group III nitride compound semiconductor, light-emitting diode, and semiconductor laser |
JPH1174562A (en) | 1997-06-30 | 1999-03-16 | Nichia Chem Ind Ltd | Nitride semiconductor element |
JP3606015B2 (en) | 1997-07-23 | 2005-01-05 | 豊田合成株式会社 | Method for manufacturing group 3 nitride semiconductor device |
WO1999005728A1 (en) | 1997-07-25 | 1999-02-04 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3744211B2 (en) | 1997-09-01 | 2006-02-08 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3651260B2 (en) | 1997-10-01 | 2005-05-25 | 日亜化学工業株式会社 | Nitride semiconductor device |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JPH11238945A (en) | 1997-12-18 | 1999-08-31 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting device |
JP3647236B2 (en) | 1997-12-22 | 2005-05-11 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
JP3468082B2 (en) | 1998-02-26 | 2003-11-17 | 日亜化学工業株式会社 | Nitride semiconductor device |
US7193246B1 (en) | 1998-03-12 | 2007-03-20 | Nichia Corporation | Nitride semiconductor device |
JPH11298090A (en) | 1998-04-09 | 1999-10-29 | Nichia Chem Ind Ltd | Nitride semiconductor element |
JPH11330552A (en) | 1998-05-18 | 1999-11-30 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element and light-emitting device |
US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
JP3279266B2 (en) * | 1998-09-11 | 2002-04-30 | 日本電気株式会社 | Gallium nitride based semiconductor light emitting device |
US6459100B1 (en) * | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
US6608330B1 (en) | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
WO2000021143A1 (en) | 1998-10-05 | 2000-04-13 | Osram Opto Semiconductors Gmbh & Co. Ohg | Radiation emitting semiconductor chip |
JP3063756B1 (en) | 1998-10-06 | 2000-07-12 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP2000133883A (en) | 1998-10-22 | 2000-05-12 | Nichia Chem Ind Ltd | Nitride semiconductor element |
US6153894A (en) | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
JP3470622B2 (en) | 1998-11-18 | 2003-11-25 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3705047B2 (en) | 1998-12-15 | 2005-10-12 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
US6614059B1 (en) | 1999-01-07 | 2003-09-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device with quantum well |
US6838705B1 (en) * | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
JP3567790B2 (en) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
JP3656456B2 (en) | 1999-04-21 | 2005-06-08 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3719047B2 (en) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | Nitride semiconductor device |
US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
JP3624794B2 (en) | 2000-05-24 | 2005-03-02 | 豊田合成株式会社 | Method for manufacturing group III nitride compound semiconductor light emitting device |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
JP2002190621A (en) * | 2000-10-12 | 2002-07-05 | Sharp Corp | Semiconductor light emitting element and manufacturing method of it |
US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
US6906352B2 (en) * | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
CN1252883C (en) | 2001-04-12 | 2006-04-19 | 日亚化学工业株式会社 | Gallium nitride compound semiconductor element |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP3876649B2 (en) * | 2001-06-05 | 2007-02-07 | ソニー株式会社 | Nitride semiconductor laser and manufacturing method thereof |
CN101834245B (en) * | 2001-06-15 | 2013-05-22 | 克里公司 | GaN based LED formed on a SiC substrate |
US6833564B2 (en) * | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
TWI275220B (en) * | 2001-11-05 | 2007-03-01 | Nichia Corp | Nitride semiconductor device |
US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
TW549767U (en) | 2001-12-28 | 2003-08-21 | Veutron Corp | L-type reflection mirror set |
JP2003298192A (en) * | 2002-02-04 | 2003-10-17 | Sanyo Electric Co Ltd | Nitride based semiconductor laser element |
US6943381B2 (en) * | 2004-01-30 | 2005-09-13 | Lumileds Lighting U.S., Llc | III-nitride light-emitting devices with improved high-current efficiency |
JP3933637B2 (en) * | 2004-03-17 | 2007-06-20 | シャープ株式会社 | Gallium nitride semiconductor laser device |
-
2004
- 2004-07-27 US US10/899,791 patent/US7692182B2/en active Active
-
2005
- 2005-06-24 KR KR1020077001904A patent/KR101236063B1/en active IP Right Grant
- 2005-06-24 EP EP05784977A patent/EP1771894B1/en active Active
- 2005-06-24 EP EP10169579.9A patent/EP2242117B1/en active Active
- 2005-06-24 EP EP10180328.6A patent/EP2259342B1/en active Active
- 2005-06-24 KR KR1020137005591A patent/KR101363826B1/en active IP Right Grant
- 2005-06-24 EP EP10180319.5A patent/EP2259340B1/en active Active
- 2005-06-24 EP EP10180325.2A patent/EP2259341B1/en active Active
- 2005-06-24 WO PCT/US2005/022597 patent/WO2006023060A2/en active Application Filing
- 2005-06-24 CA CA2567739A patent/CA2567739C/en active Active
- 2005-06-24 CN CNA2005800253273A patent/CN101006590A/en active Pending
- 2005-06-24 KR KR1020127003236A patent/KR20120017473A/en not_active Application Discontinuation
- 2005-06-24 JP JP2007523569A patent/JP2008508720A/en active Pending
- 2005-06-24 KR KR1020117021897A patent/KR101388369B1/en active IP Right Grant
- 2005-07-05 TW TW094122647A patent/TWI394288B/en active
- 2005-07-05 TW TW102102712A patent/TWI474505B/en active
-
2011
- 2011-08-24 JP JP2011182184A patent/JP2012015535A/en active Pending
Non-Patent Citations (1)
Title |
---|
None |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5136765B2 (en) * | 2005-05-02 | 2013-02-06 | 日亜化学工業株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
CN101636850A (en) * | 2006-12-22 | 2010-01-27 | 皇家飞利浦电子股份有限公司 | III-nitride light emitting devices grown on templates to reduce strain |
CN102544286A (en) * | 2006-12-22 | 2012-07-04 | 皇家飞利浦电子股份有限公司 | III-nitride light emitting devices grown on templates to reduce strain |
JP2011501408A (en) * | 2007-10-12 | 2011-01-06 | エイジェンシー フォア サイエンス テクノロジー アンド リサーチ | Fabrication of red and white nitride based LEDs without phosphors |
US8963176B2 (en) | 2010-03-08 | 2015-02-24 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing same |
US9252325B2 (en) | 2012-12-04 | 2016-02-02 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor light-emitting device |
US9570656B2 (en) | 2013-09-25 | 2017-02-14 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
CN101006590A (en) | 2007-07-25 |
CA2567739A1 (en) | 2006-03-02 |
US20050056824A1 (en) | 2005-03-17 |
CA2567739C (en) | 2014-09-16 |
JP2012015535A (en) | 2012-01-19 |
EP2259341A3 (en) | 2017-11-22 |
EP2259342A2 (en) | 2010-12-08 |
EP2259341A2 (en) | 2010-12-08 |
KR20130038415A (en) | 2013-04-17 |
EP2242117A3 (en) | 2011-01-05 |
EP2242117B1 (en) | 2018-05-30 |
EP2259342A3 (en) | 2017-11-22 |
EP2259340B1 (en) | 2016-12-21 |
KR20070042983A (en) | 2007-04-24 |
TWI394288B (en) | 2013-04-21 |
TWI474505B (en) | 2015-02-21 |
EP2259342B1 (en) | 2021-03-10 |
JP2008508720A (en) | 2008-03-21 |
EP2259340A2 (en) | 2010-12-08 |
KR101236063B1 (en) | 2013-02-22 |
WO2006023060A3 (en) | 2006-04-13 |
US7692182B2 (en) | 2010-04-06 |
EP1771894A2 (en) | 2007-04-11 |
EP2259341B1 (en) | 2020-08-26 |
TW201338193A (en) | 2013-09-16 |
KR101363826B1 (en) | 2014-02-17 |
TW200625679A (en) | 2006-07-16 |
KR20120017473A (en) | 2012-02-28 |
EP1771894B1 (en) | 2013-04-03 |
EP2259340A3 (en) | 2011-01-05 |
EP2242117A2 (en) | 2010-10-20 |
KR101388369B1 (en) | 2014-04-23 |
KR20110110868A (en) | 2011-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1771894B1 (en) | Group iii nitride based quantum well light emitting device structures with an indium containing capping structure | |
US9054253B2 (en) | Group III nitride based quantum well light emitting device structures with an indium containing capping structure | |
EP1401027B1 (en) | Group III nitride based light emitting diode with a superlattice structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2567739 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 7210/DELNP/2006 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005784977 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077001904 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580025327.3 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007523569 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005784977 Country of ref document: EP |