WO2000021143A1 - Radiation emitting semiconductor chip - Google Patents

Radiation emitting semiconductor chip Download PDF

Info

Publication number
WO2000021143A1
WO2000021143A1 PCT/DE1999/003211 DE9903211W WO0021143A1 WO 2000021143 A1 WO2000021143 A1 WO 2000021143A1 DE 9903211 W DE9903211 W DE 9903211W WO 0021143 A1 WO0021143 A1 WO 0021143A1
Authority
WO
WIPO (PCT)
Prior art keywords
active layer
semiconductor chip
gainn
gan
radiation
Prior art date
Application number
PCT/DE1999/003211
Other languages
German (de)
French (fr)
Inventor
Volker HÄRLE
Berthold Hahn
Andreas Hangleiter
Original Assignee
Osram Opto Semiconductors Gmbh & Co. Ohg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19845748.0 priority Critical
Priority to DE19845748 priority
Application filed by Osram Opto Semiconductors Gmbh & Co. Ohg filed Critical Osram Opto Semiconductors Gmbh & Co. Ohg
Publication of WO2000021143A1 publication Critical patent/WO2000021143A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] characterised by special barrier layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor chip, especially a GaN/GaInN based chip, that emits radiation, whereby the active layer has a multi quantum wave structure. The active layer has very thin quantum films (maximum thickness: 3 nm) and/or electro-conductive doped barrier layers and/or quantum films. The wavelengths of the emitted radiation is substantially independent of changes in the intensity of the current through the chip.

Description


  
 



  description
Radiation-emitting semiconductor chip
The invention relates to a radiation-emitting
Semiconductor chip, in particular based on GaN / GaInN, in which the active layer is a single or multiple
Has quantum well structure, especially on W, blue
Semiconductor chips emitting light or green light.



  With a single quantum well, the active layer shows in the
Usually two barrier layers and a quantum film lying between them, and for a multiple quantum well usually x quantum films and x + 1 barrier layers (where x> 1) in which the quantum films are embedded. Easy-and
Multiple quantum well structures are known per se and are therefore not explained in more detail here.



  The wavelength of the emitted radiation from known light-emitting semiconductor chips of this type (LED (Light
Emitting diode) chips) is strongly dependent on the height of the
Operating current.



  One reason for this can be an in-segregation in the
Quantum wave range and can also be piezoelectric
Fields that are caused by internal tension in the chip. Applying electrical voltage to the chip in the forward direction leads to a scanning of the internal fields and with increasing current through the
Chip to a wavelength shift of the emitted
Radiation towards shorter wavelengths. The bigger the
The wavelength of the emitted radiation is the stronger this effect is shown.



  The object of the invention is to develop a semiconductor chip of the type mentioned, in which the
The wavelength of the emitted radiation is largely independent of changes in the current intensity through the chip.



  This task is accomplished with a semiconductor chip
Features of claim 1,4,5 or 6 solved. In such a semiconductor chip, the piezoelectric fields are kept small and / or largely compensated for by the installation of additional internal fields.



  The former is done with a semiconductor chip of the type mentioned
Type achieved in which the active layer has thin quantum films with a thickness <3nm.



  A particularly preferred exemplary embodiment for this, shown schematically in FIG. 1, is a
Semiconductor chip with an active layer 4, the one
GaN / GaInN multi-quantum well structure, in which 3.5 GaInN quantum films with a thickness <3nm are arranged between GaN barrier layers and which on a SiC
Substrate 1 is produced, with further layers, in particular a buffer layer 2, being able to be located between the substrate 1 and the active layer 4.



  The second is achieved with a semiconductor chip of the type mentioned in the introduction, in which the barrier layers 3, 5 and / or the quantum films are doped in an electrically conductive manner.



  The doping is designed for the existing fields so that they are compensated for. It is based on the
Tension in the active layer.



  Optimal compensation of the piezo fields is achieved by high doping of the active layer. As a result, the piezo fields are virtually short-circuited. This also anticipates the charge carrier densities that occur in later operation. Technically, this is possible, for example, through high n-doping in the area of the active zone. In order to achieve the highest possible ratio p / (p + n), high p
Doping required.



  The necessary for the compensation of the internal fields
Load carrier densities are greater than 10 cm '. You will be through
Doping of the quantum well range or achieved by remote doping of barrier layers.



  Alternatively, the barrier layers can be doped bipolar. Effective compensation can be achieved through acceptors and
Donors can be achieved directly at the quantum well. The
Charge carrier densities are greater than 10cm3. Advantageously, for effective doping above the quantum well, p- and heavily n-doped below the quantum well. The piezo fields are canceled by the fields caused by the ionized donors and acceptors.



  A particularly preferred exemplary embodiment is a
Semiconductor chip with an active layer, which is a GaN / GaInN
Has multi-quantum well structure in which between GaN
Barrier layers GaInN quantum films are arranged and which is produced on an SiC substrate, and in which there are still more between the substrate and the active layer
Layers, in particular a buffer layer, can be located, the GaN barrier layers and / or the GaInN
Quantum films are electrically doped, that is to say they are n-doped or p-doped. The endowment is based on the
Bracing and not on the structure, d. H. z. B. on an n- or p-doped buffer layer.



  A third solution is between the
Substrate and the active layer a relaxed
Semiconductor layer arranged, which has the same lattice constant as the lattice constant in the quantum well.



  A particularly preferred exemplary embodiment for this, shown schematically in FIG. 2, is a
Semiconductor chip with an active layer 4, the one
GaN / GaInN multi-quantum well structure, in which 3.5 GaInN quantum films are arranged between GaN barrier layers and which is produced on an SiC substrate 1, wherein between the substrate 1 and the active
Layer 4 is a relaxed InGaAlN layer 6, which has the same lattice constant as that of the quantum well. The
Barrier layers 5,6 consist of AlGaInN.



  The structures given above can be used for all GaInN / GaN-based LEDs as well as for all structures that have strong internal stress fields.
  

Claims

1. Radiation-emitting semiconductor chip, in particular  the base of GaN / GaInN, in which an active layer (4)  has a single or multiple quantum well structure,  characterized in that  the active layer quantum films with a thickness <3 nm  having.
2. Radiation-emitting semiconductor chip according to claim 1,  characterized by dab  the active layer (4) is a GaN / GaInN multiquantum well  Has structure in which between GaN barrier layers  (3,5) GaInN quantum films arranged with a thickness <3nm  and which is produced over an SiC substrate (1).
3. Radiation-emitting semiconductor chip according to claim 2,  characterized in that  the quantum films and / or the barrier layers are electrical  are conductively endowed.
4. Radiation-emitting semiconductor chip, in particular on  the base of GaN / GaInN, in which an active layer (4)  has a single or multiple quantum well structure,  characterized in that  the quantum films of single or multiple quantum wells  Structure are electrically conductive doped.
5. Radiation-emitting semiconductor chip, in particular on  the base of GaN / GaInN, in which the active layer (4)  has a single or multiple quantum well structure,  which is arranged between barrier layers (3, 5),  characterized in that  the quantum films and / or the barrier layers are electrical  are conductively endowed.
6. Radiation-emitting semiconductor chip, in particular on  the base of GaN / GaInN, in which an active layer (4)  has a single or multiple quantum well structure,  characterized in that  between a substrate (1) and the active layer (4)  a relaxed semiconductor layer arranged, the  has the same lattice constant as the lattice constant  in quantum well.
7. radiation-emitting semiconductor chip according to claim 6,  characterized by dab  the active layer (4) is a GaN / GaInN multiquantum well  Has structure in which between GaN barrier layers  (3,5) GaInN quantum films are arranged on a  SiC substrate (1) is produced, wherein between the  Substrate (1) and the active layer a relaxed  InGaAlN layer is located.
PCT/DE1999/003211 1998-10-05 1999-10-05 Radiation emitting semiconductor chip WO2000021143A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19845748.0 1998-10-05
DE19845748 1998-10-05

Publications (1)

Publication Number Publication Date
WO2000021143A1 true WO2000021143A1 (en) 2000-04-13

Family

ID=7883410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/003211 WO2000021143A1 (en) 1998-10-05 1999-10-05 Radiation emitting semiconductor chip

Country Status (1)

Country Link
WO (1) WO2000021143A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001092428A1 (en) * 2000-06-02 2001-12-06 Erhard Kohn Heterostructure with rear-face donor doping
WO2002097904A2 (en) * 2001-05-30 2002-12-05 Cree, Inc. Group iii nitride based light emitting diode structures with a quantum well and superlattice
WO2003012877A2 (en) * 2001-07-20 2003-02-13 Erhard Kohn Field effect transistor
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
WO2011098799A2 (en) 2010-02-10 2011-08-18 Pulmagen Therapeutics (Inflammation) Limited Respiratory disease treatment
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US20170213868A1 (en) * 2014-04-01 2017-07-27 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19613265C1 (en) * 1996-04-02 1997-04-17 Siemens Ag Circuit element, e.g. laser diode
EP0772249A2 (en) * 1995-11-06 1997-05-07 Nichia Chemical Industries, Ltd. Nitride semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0772249A2 (en) * 1995-11-06 1997-05-07 Nichia Chemical Industries, Ltd. Nitride semiconductor device
DE19613265C1 (en) * 1996-04-02 1997-04-17 Siemens Ag Circuit element, e.g. laser diode

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AKASAKI I ET AL: "STIMULATED EMISSION BY CURRENT INJECTION FROM AN ALGAN/GAN/GAINN QUANTUM WELL DEVICE", JAPANESE JOURNAL OF APPLIED PHYSICS,JP,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 34, PART 2, no. 11B, 15 November 1995 (1995-11-15), pages L1517 - L1519, XP000735115, ISSN: 0021-4922 *
CHICHIBU S ET AL: "EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM WELL PURPLISH-BLUE LASER DIODES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 73, no. 4, 27 July 1998 (1998-07-27), pages 496 - 498, XP000774917, ISSN: 0003-6951 *
DEGUCHI T ET AL: "Luminescence spectra from InGaN multiquantum wells heavily doped with Si", APPLIED PHYSICS LETTERS, 22 JUNE 1998, AIP, USA, vol. 72, no. 25, pages 3329 - 3331, XP002129502, ISSN: 0003-6951 *
SUN C J ET AL: "QUANTUM SHIFT OF BAND-EDGE STIMULATED EMISSION IN INGAN-GAN MULTIPLE QUANTUM WELL LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 70, no. 22, 2 June 1997 (1997-06-02), pages 2978 - 2980, XP000694810, ISSN: 0003-6951 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352008B2 (en) * 2000-06-02 2008-04-01 Microgan Gmbh Heterostructure with rear-face donor doping
WO2001092428A3 (en) * 2000-06-02 2002-05-30 Erhard Kohn Heterostructure with rear-face donor doping
WO2001092428A1 (en) * 2000-06-02 2001-12-06 Erhard Kohn Heterostructure with rear-face donor doping
WO2002097904A2 (en) * 2001-05-30 2002-12-05 Cree, Inc. Group iii nitride based light emitting diode structures with a quantum well and superlattice
WO2002097904A3 (en) * 2001-05-30 2003-02-20 Cree Inc Group iii nitride based light emitting diode structures with a quantum well and superlattice
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CN100350637C (en) * 2001-05-30 2007-11-21 克里公司 Group III nitride based light emitting diode structures with a quantum well and superlattice
US7312474B2 (en) 2001-05-30 2007-12-25 Cree, Inc. Group III nitride based superlattice structures
US9112083B2 (en) 2001-05-30 2015-08-18 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US9054253B2 (en) 2001-05-30 2015-06-09 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
WO2003012877A3 (en) * 2001-07-20 2003-09-18 Erhard Kohn Field effect transistor
WO2003012877A2 (en) * 2001-07-20 2003-02-13 Erhard Kohn Field effect transistor
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
WO2011098799A2 (en) 2010-02-10 2011-08-18 Pulmagen Therapeutics (Inflammation) Limited Respiratory disease treatment
US20170213868A1 (en) * 2014-04-01 2017-07-27 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
US10103195B2 (en) * 2014-04-01 2018-10-16 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

Similar Documents

Publication Publication Date Title
US8653540B2 (en) Optoelectronic semiconductor body and method for producing the same
US9530932B2 (en) Nitride semiconductor light-emitting device and method for producing the same
US8772792B2 (en) LED with surface roughening
JP2014160854A (en) Optoelectronic semiconductor body and method for production thereof
US9634191B2 (en) Wire bond free wafer level LED
US6943381B2 (en) III-nitride light-emitting devices with improved high-current efficiency
US7345315B2 (en) Gallium nitride based light-emitting device
EP2274774B1 (en) Radiation-emitting semiconductor chip
TWI506811B (en) Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US20140008671A1 (en) Light emitting device having vertically stacked light emitting diodes
US7026653B2 (en) Semiconductor light emitting devices including current spreading layers
US5945689A (en) Light-emitting semiconductor device using group III nitride compound
US8643029B2 (en) Light emitting device having a plurality of light emitting cells and package mounting the same
US6526082B1 (en) P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
US8008647B2 (en) Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps
EP2212931B1 (en) Led having current spreading layer
TWI293806B (en) Light emitting devices including tunnel junctions
US7145184B2 (en) Nitride semiconductor element
US20120112233A1 (en) Semiconductor light emitting device
KR101714039B1 (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
US7880181B2 (en) Light emitting diode with improved current spreading performance
US7482696B2 (en) Light-emitting diode package structure
US7323721B2 (en) Monolithic multi-color, multi-quantum well semiconductor LED
JP2013009013A (en) Optoelectronic semiconductor chip, optoelectronic module, and method for producing optoelectronic semiconductor chip
US8643034B2 (en) Monolithic, optoelectronic semiconductor body and method for the production thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase