JP3424465B2 - Nitride semiconductor device and method of growing nitride semiconductor - Google Patents

Description

Detailed Description of the Invention

[0001]

The present invention relates to an LED (light emitting diode).
LED), LD (laser diode), etc., or
Is a nitriding material used for light receiving elements such as solar cells and optical sensors.
Semiconductor (In _XAl_YGa_1-XYN, 0 ≦ X, 0 ≦ Y, X +
A device consisting of Y ≦ 1) and a nitride half that composes the device
A method for growing a conductor.

[0002]

2. Description of the Related Art Nitride semiconductors have recently been put into practical use as materials for high-intensity blue LEDs and pure green LEDs in full-color LED displays, traffic signals and the like. These LEDs have a single-quantum well structure (SQW: Single-Quant) between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer.
It has a double hetero structure having an active layer made of InGaN having um-well). Wavelengths such as blue and green are determined by increasing or decreasing the In composition ratio of the InGaN active layer.

Further, the present applicant recently announced a laser oscillation of 410 nm at room temperature in pulse current using this material (for example, Jpn. J. Appl. Phys. Vol35 (1996).
pp.L74-76). Figure 1 shows the structure of the announced laser device. This laser device comprises a GaN buffer layer, n-GaN, n-In0.1Ga0.9N, n-Al on a sapphire substrate.
0.15 Ga0.85N, n-GaN, InGaN active layer of multi-quantum well structure (MQW: Multi-Quantum-Well), p-Al0.2 Ga0.8 N, p-GaN, p-Al0.15
This is an electrode stripe type laser device in which Ga0.85N and p-GaN are sequentially laminated. The uppermost p-type GaN has a striped p-electrode, and the n-GaN on the buffer layer exposed by etching has the same striped n-electrode.
Electrodes are formed. This laser element has a threshold current of 610 mA, a threshold current density of 8.7 kA / cm ² , and a threshold voltage of 21 V at a pulse current (pulse width 2 μs, pulse period 2 ms), and the threshold current and voltage are considerably high. In order to perform continuous oscillation at room temperature, it is necessary to realize an element having higher luminous efficiency such that the threshold current and voltage drop.

[0004]

As described above, in nitride semiconductors, LEDs are in the practical range, and further improvement in luminous intensity and long life are desired. In LDs, continuous oscillation at room temperature at an early stage is desired. . For that purpose, it is necessary to improve the structure of the element itself to improve the characteristics of the nitride semiconductor device. For that purpose, it is easiest to lower the threshold value of the laser element used under the most severe conditions so that the laser element continuously oscillates. Therefore, an object of the present invention is to realize a highly reliable and highly efficient nitride semiconductor device by lowering the threshold of a laser device mainly made of a nitride semiconductor and continuously oscillating at room temperature for a long time. Especially. By realizing this, the luminous efficiency of the LED can be improved at the same time, and the efficiency of the light receiving element such as the solar cell and the optical sensor can be improved. To this end, the present invention provides a novel structure of a nitride semiconductor device and a method of growing a nitride semiconductor constituting the device.

[0005]

A nitride semiconductor device of the present invention comprises an n-type nitride semiconductor layer (hereinafter referred to as an n-type layer) and a p-type nitride semiconductor layer (hereinafter referred to as a p-type layer). In the nitride semiconductor device in which the active layer having the quantum structure is formed between the two, the active layer is formed in contact with the n-type layer having fine irregularities on the surface. The quantum structure is a single quantum well structure (SQW: Si
ngle-quantum-Well), MQW, quantum dot, quantum box, etc., which means an active layer formed with a very thin single film thickness such that the quantum effect of a nitride semiconductor appears. Is an active layer consisting of a single well layer having a film thickness of 70 Å or less, more preferably 50 Å or less for SQW, and a barrier layer of 150 Å or less, more preferably 100 Å or less for MQW. Means an active layer formed by laminating a plurality of barrier layers and the well layers.
The quantum box and the quantum dot are formed of an indium-rich region containing a large amount of indium and an indium poor region containing a small amount of indium due to phase separation of a part of a well layer and / or a barrier layer having a thin active layer. , A state in which the indium-rich region and the indium-poor region are regularly arranged on a plane to form a quantum box. Alternatively, a quantum dot or a quantum box is also included here if the thickness of the well layer generated by the In-rich region and the In-poor region is non-uniform in the plane and carriers are confined in the in-plane direction. However, quantum boxes and quantum dots will be described in detail later.

The semiconductor device of the present invention is characterized in that the average step of the unevenness of the n-type layer formed in contact with the active layer is in the range of 10 Å to 100 Å. The average step of the unevenness can be determined by measuring the surface roughness of the nitride semiconductor layer.

The method for growing a nitride semiconductor of the present invention comprises two types of modes. The first mode is to grow an n-type layer and then provide fine irregularities on the surface of the n-type layer. ,
And a step of growing an active layer made of a nitride semiconductor having a quantum structure and in contact with the n-type layer provided with the unevenness.

A second aspect of the growth method of the present invention is a step of growing an n-type layer so that fine irregularities are formed on the outermost surface of the nitride semiconductor layer after the growth, and n having the irregularities. Contacting the type nitride semiconductor layer, and growing an active layer made of a nitride semiconductor having a quantum structure and containing indium.

Furthermore, in the first and second aspects of the growth method of the present invention, the average step of the irregularities is in the range of 10 Å to 100 Å.

[0010]

FIG. 2 is a schematic sectional view showing an enlarged structure near an active layer of a nitride semiconductor device of the present invention. In the nitride semiconductor device of the present invention, an active layer is formed n
Fine irregularities are provided on the surface of the mold layer. When an active layer having a quantum structure is grown on this n-type layer, irregularities also occur on the surface of the active layer. The film thickness of the single well layer of the active layer forming the quantum structure is very thin, 70 angstroms or less. When such a layer having a very small single film thickness is grown on the surface of the n-type layer having irregularities, the active layer inherits the property and irregularities are generated. Uniformity tends to occur. That is, when an active layer is grown on the unevenness of the n-type layer, the carriers injected into the active layer (well layer) have a band gap difference between the n-type layer and the p-type layer in the in-plane direction. The carriers are confined in the lateral direction, which is the same as the quantum box or quantum dot structure, and the output is greatly improved.

In FIG. 2, the carrier is indicated by a circle,
The carrier is confined in the n-type layer existing in the lateral direction of the active layer. When the n-type layer has irregularities in this manner, the composition of In tends to be nonuniform in the active layer containing In, and an In-poor region having a low In content and an In-rich region having a high In content are likely to be formed. There is a tendency. Alternatively, when an active layer containing In is grown on an n-type layer, for example, InGaN tends to cause phase separation during growth, and when phase separation occurs, the thickness of the InGaN active layer tends to be nonuniform. Therefore, even if the unevenness of the lower n-type layer is small, the unevenness due to the phase separation of InGaN tends to further increase the unevenness of the active layer. Therefore, the quantum dots or quantum boxes formed in the active layer have two effects of confinement of carriers due to unevenness and separation of In composition. Moreover, as described above, the InGaN concavo-convex region has the In-rich region and the poor region. That is, the non-uniform composition of indium in the plane of the active layer having at least one well layer means that InGaN regions (In-rich regions, In regions) having different band gaps in the plane direction of the single well layer are formed.
Poor region), and in the in-plane direction, there is lateral carrier confinement caused by unevenness. Therefore, the carriers injected into the active layer are confined in the lateral direction due to the In-rich region or the unevenness. This corresponds to the effect that carriers are confined in three dimensions. That is, the active layer corresponds to the quantum box and quantum dot effects.

Further, in addition to the quantum dot effect, the electron carriers and hole carriers injected into the active layer are I in the well layer.
When the carrier is confined in the lateral direction by the n-rich region or unevenness, the carriers are three-dimensionally localized to form localized excitons or biexcitons, which helps lower the laser threshold and improves the output. It may be. More carriers exist in the In-rich region than in the poor region, and electron carriers and hole carriers are localized to emit light based on excitons or light based on biexcitons. That is, the In rich region constitutes a quantum dot or a quantum box. Therefore, it is presumed that the active layer having a quantum structure made of InGaN formed on the surface of the uneven n-type layer easily forms a quantum dot or a quantum box, and thus the output is significantly improved. Therefore, the active layer has a single quantum well structure (SQW).
l) 、 Multi quantum well structure (MQW: Multi quantum well)
In the case of a quantum well structure such as
It is necessary to have a well layer made of a nitride semiconductor containing a single well layer, and the thickness of the single well layer is preferably adjusted to 70 angstroms or less, more preferably 50 angstroms or less. In the case of MQW, the barrier layer is composed of a nitride semiconductor layer having a bandgap energy larger than that of the well layer, and the film thickness is adjusted to 150 angstroms or less, more preferably 100 angstroms or less.

The unevenness of the surface of the n-type layer in which the above-mentioned effect of the active layer is most remarkable is 10 angstroms or more and 100 angstroms or less, more preferably 10 angstroms or more and 60 angstroms or less, and most preferably 10 angstroms or more. , 40 Å or less. If it is smaller than 10 angstroms, the ground energy level of the quantum dots energetically overflows the energy barrier of the barrier layer, and the effects of the quantum dots and quantum boxes tend not to appear. If it is larger than 100 angstroms,
The crystallinity of the active layer deteriorates, and the light emission output tends to decrease.

Furthermore, when such an active layer is doped with an n-type impurity of the same type as that of the n-type layer in which the irregularities are formed, the threshold current of the laser element further decreases. When the active layer is doped with an n-type impurity, an impurity level energy level is further formed between the conduction band and the valence band. As a result, the electron carriers drop to a deeper impurity level energy level, where the electron carriers and hole carriers recombine and emit a smaller energy hν ′. This means that the electron carriers are more localized,
It is presumed that the threshold value of the nitride semiconductor device, particularly the laser device, is lowered due to the effect of the exciton formed more localizedly. Further, since the active layer and the n-type layer contain the same impurities, there is no adverse effect even if the impurities diffuse between the layers. As n-type impurities,
At least one element selected from Group 4A, Group 4B, Group 6A and Group 6B of the periodic table such as Si, Ge, Sn and the like can be mentioned, but Si is particularly preferably used.

In the first aspect of the growth method of the present invention,
After growing the n-type layer, for example, the following method is used to provide fine irregularities on the surface of the n-type layer.

The first is a means for etching the surface of the n-type layer. The etching is roughly classified into dry etching and wet etching, but dry etching is preferably used. Examples of dry etching include devices such as reactive ion etching (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance etching (ECR), ion milling, and photoexcited etching. Both of them are devices for introducing a gas into the etching chamber and activating the gas to etch the nitride semiconductor. The surface roughness can be adjusted by appropriately selecting the type of gas. For example, RIE
Then, the nitride semiconductor can be etched in an atmosphere containing active Si and active Cl. If it is wet etching, for example, a mixed acid of phosphoric acid and sulfuric acid can be used.

The second is a means for polishing (lapping, polishing) the surface of the n-type layer. Examples of the abrasive include diamond, SiC, WC and the like. Fine irregularities are provided on the surface of the n-type layer by appropriately adjusting the particle size of the polishing agent during polishing, the polishing pressure, and the like.

In the second aspect of the growth method of the present invention, for growing the n-type layer so that fine irregularities are formed on the outermost surface of the nitride semiconductor layer after growth, for example, the following method is used. Can be grown in.

First, there is a method in which the n-type layer is doped with a large amount of n-type impurities immediately before the growth of the n-type layer, and finally the n-type layer containing a large amount of impurities is grown. The thickness of the layer containing a large amount of impurities is not particularly limited, but 1
It is desirable to adjust it to be 000 angstroms or less. When a layer doped with more impurities than 1000 Å is formed, the crystallinity of the n-type layer itself becomes too poor, and it tends to be difficult to grow an active layer having good crystallinity. The preferable doping amount of the n-type impurity is 1 × 10 ¹⁸ / cm ³ or more, more preferably 1 × 10 8.
^It is adjusted to ¹⁹ / cm ³ or more, most preferably 1 × 10 ²⁰ / cm ³ or more.

Secondly, immediately before the end of the growth of the n-type layer, the growth rate of the n-type layer crystal is increased to n.
There is a method of intentionally making the crystallinity worse than that of the mold layer. According to this method, the film thickness of the layer that accelerates the growth rate is not particularly limited, but 10 angstroms or more and 100
It is desirable to adjust it to 0 angstrom or less. Although the growth rate varies depending on the crystal growth method, for example, in the MOVPE method, the growth rate is 1.5 to 10 times as high as the growth rate of the crystal that has been grown so far.

To grow a nitride semiconductor, for example, metal organic chemical vapor deposition (MOVPE), molecular beam vapor phase epitaxy (MBE), metal organic molecular beam epitaxy (MOMB).
E), nitride vapor deposition (HDVPE) method, and other conventionally proposed methods for growing a nitride semiconductor can be used.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The steps of producing a laser device made of a nitride semiconductor according to the device of the present invention by MOVPE will be described in detail below with reference to the drawings.

[Embodiment 1] FIG. 3 is a schematic sectional view showing the structure of a laser device according to an embodiment of the present invention, which is obtained when the device is cut in a direction perpendicular to the resonance direction of laser light. The figure is shown.

After the substrate 1 made of sapphire (C-face) is set in the reaction vessel and the vessel is sufficiently replaced with hydrogen, the temperature of the substrate is raised to 1050 ° C. while flowing hydrogen to clean the substrate. . In addition to the C plane of sapphire, sapphire having R plane and A plane as main surfaces, and other insulating substrates such as spinel (MgA1 ₂ O ₄ ) can be used for the substrate 1. On the insulating substrate, the obtained laser element has a structure in which an n electrode and ap electrode are formed on the same surface side. In addition to an insulating substrate, a semiconductor substrate of SiC (including 6H, 4H, 3C), ZnS, ZnO, GaAs, GaN, or the like is used, and an n electrode and ap electrode are provided in upper and lower nitride semiconductor layers. It is also possible to form both the n and p electrodes on the same surface of the nitride semiconductor layer as in an insulating substrate.

Then, the temperature is lowered to 510 ° C., hydrogen is used as a carrier gas, ammonia and TMG (trimethylgallium) are used as source gases, and a buffer layer 2 made of GaN is formed on the substrate 1 to a film thickness of about 200 Å. Grow. The buffer layer is made of AlN, GaN, AlGaN, etc.
It can be formed at a temperature of 900 ° C. or less and a film thickness of several tens of angstroms to several hundreds of angstroms. This buffer layer is formed in order to mitigate the lattice constant irregularity between the substrate and the nitride semiconductor, but it may be omitted depending on the growth method of the nitride semiconductor, the type of the substrate, and the like.

After growing the buffer layer 2, stop only TMG,
The temperature is raised to 1030 ° C. When the temperature reached 1030 ° C., TMG, ammonia gas, and silane gas were used as the raw material gas and the impurity gas, and the n-type contact layer 3 was formed.
Si-doped n-type Ga doped with Si at 8 × 10 ¹⁸ / cm ³
N layer 5μ at a speed of 800 Å / min
m to grow. The n-type contact layer is In _X Al _Y Ga
_1-XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1), and particularly n-type having a high carrier concentration by being composed of GaN, InGaN, and GaN doped with Si or Ge. A layer is obtained and a favorable ohmic contact with the n-electrode is obtained. The material for the n-electrode is A
A metal or alloy such as l, Ti, W, Cu, Zn, Sn, or In provides a preferable ohmic contact.

Next, the temperature was set to 800 ° C., TMG, TMI (trimethylindium), ammonia was used as a source gas, and silane gas was used as an impurity gas. Si was also grown at 8 × 10 ¹⁸ / min at a growth rate of 800 Å / min. c
A crack prevention layer 4 made of m ³ -doped Si-doped In0.1Ga0.9N is grown to a thickness of 500 Å. The crack prevention layer 4 is grown from an n-type nitride semiconductor containing In, preferably InGaN, so that the n-type cladding layer 5 containing Al to be grown next can be grown as a thick film. preferable. LD
In the case of, the layer serving as the optical confinement layer is preferably 0.1
It is necessary to grow with a film thickness of μm or more. Conventionally Ga
If a thick film of AlGaN is grown directly on the N and AlGaN layers, it is difficult to fabricate the device because the AlGaN grown later has cracks. It is possible to prevent cracks from entering the n-type clad layer 5 containing. The crack prevention layer is 100 angstroms or more, 0.5 μm
It is preferable to grow the film with the following film thickness. When the thickness is less than 100 Å, it is difficult to act as a crack preventive as described above, and when the thickness is more than 0.5 μm, the crystal itself tends to turn black. The crack prevention layer 4 may be omitted depending on conditions such as a growth method and a growth apparatus, but it is preferable to grow it when an LD is manufactured. The crack prevention layer 4 may be grown in the n-type contact layer 3.

Next, the temperature is set to 1030 ° C., and TMA (trimethylaluminum), TMG, NH ₃ , and
An n-type clad layer 5 made of Si-doped n-type Al0.2Ga0.8N doped with Si at 8 × 10 ¹⁸ / cm ³ and having a film thickness of 0.5 μm was also formed using SiH ₄ at a growth rate of 800 Å / min. Grow. The first n-type cladding layer 5 acts as a carrier confinement layer and an optical confinement layer, and it is desirable to grow a nitride semiconductor containing Al, preferably AlGaN as described above. 100 angstroms or more and 2 μm or less, More preferably 5
A carrier confinement layer having good crystallinity can be formed by growing the film at a thickness of 00 angstrom or more and 1 μm or less.

Subsequently, at 1030 ° C., Si was added at 8 × 10 ¹⁸ /
The n-type optical guide layer 6 made of cm ³ -doped Si-doped n-type GaN is grown to a thickness of 0.2 μm at the same growth rate of 800 Å / min. The n-type light guide layer 6 acts as a light guide layer of the active layer, and includes GaN and In.
It is desirable to grow GaN, and usually it is desirable to grow it to a film thickness of 100 angstroms to 5 μm, and more preferably 200 angstroms to 1 μm.

After the growth of the optical guide layer 6, the temperature inside the reaction vessel is returned to room temperature, and then the wafer is taken out and transferred to the RIE apparatus. Then, the entire surface of the n-type optical guide layer 6 is slightly etched by using an RIE apparatus with Cl ₂ and SiCl ₄ gas. After the etching was completed, the surface of the n-type optical guide layer was observed with an atomic force electron microscope. As a result, a surface roughness of about 30 Å could be measured.

After the etching, the wafer is transferred again to the reaction vessel, and the active layer 7 is grown by using TMG, TMI, ammonia, and silane gas as the source gas. The active layer 7 is maintained at a temperature of 800 ° C., and a well layer made of In0.2Ga0.8N doped with Si at 8 × 10 ¹⁸ / cm ³ is grown to a thickness of 25 Å. Next, Si is changed to 8 × 10 ¹⁸ / cm at the same temperature only by changing the TMI molar ratio.
^A barrier layer made of ^3- doped In0.01Ga0.95N is used.
It is grown to a film thickness of angstrom. This operation is repeated twice, and finally the active layer 7 having a multiple quantum well structure in which well layers are stacked is grown. The n-type impurity of the active layer may be doped in both the well layer and the barrier layer as in this embodiment, or may be doped in either one.

Next, the temperature is raised to 1050 ° C. and TMG,
Using TMA, NH ₃ and Cp 2 Mg (cyclopentadienyl magnesium), a p-type cap layer 8 made of Mg-doped p-type Al0.1Ga0.9N having a bandgap energy larger than that of the active layer is grown to a thickness of 300 angstroms. Let Although the p-type cap layer 8 is p-type, since it is thin, it may be i-type in which carriers are compensated by doping n-type impurities, and most preferably p-type.
The thickness of the p-type cap layer 8 is 0.1 μm or less, more preferably 500 angstroms or less, and most preferably 3 μm.
Adjust to less than 00 angstroms. This is because if the film is grown to a thickness greater than 0.1 μm, cracks are likely to occur in the p-type cap layer 8 and a nitride semiconductor layer having good crystallinity is difficult to grow. Also, carriers cannot pass through this energy barrier due to the tunnel effect. Also,
If AlGaN with a large Al composition ratio is formed thinner, LD
The element becomes easy to oscillate. For example, in the case of Al _Y Ga _{1 -Y} N having a Y value of 0.2 or more, it is desirable to adjust it to 500 angstroms or less. The lower limit of the film thickness of the p-type cap layer 8 is not particularly limited, but it is desirable to form the p-type cap layer 8 with a film thickness of 10 angstroms or more.

Subsequently, at 1050 ° C., the Mg-doped p layer having a bandgap energy smaller than that of the p-type cap layer 8 is formed.
The p-type light guide layer 9 made of n-type GaN is grown to a thickness of 0.2 μm. This layer acts as a light guide layer of the active layer, and it is desirable to grow GaN or InGaN as with the n-type light guide layer 6. This layer also acts as a buffer layer when growing the p-type cladding layer 10.
100 angstrom to 5 μm, more preferably 2
When grown to a film thickness of 00 Å to 1 μm, it acts as a preferable light guide layer.

Subsequently, at 1050 ° C., the Mg-doped p having a bandgap energy larger than that of the p-type optical guide layer 9 is formed.
The p-type clad layer 10 made of Al0.2Ga0.8N is 0.2
Grow with a film thickness of 5 μm. This layer is the n-type cladding layer 5
Similarly, a nitride semiconductor containing Al, which acts as a carrier confinement layer and a light confinement layer and contains Al, preferably AlG.
It is desirable to grow aN, and by growing it at 100 angstroms or more and 2 μm or less, more preferably 500 angstroms or more and 1 μm or less,
A carrier confinement layer having good crystallinity can be formed.

In the case of the active layer 7 having the quantum structure having the well layer made of InGaN as in this embodiment, the p-type cap layer 8 containing Al and having a film thickness of 0.1 μm or less is provided in contact with the active layer 7. A p-type optical guide layer 9 having a smaller bad gap energy than the p-type cap layer 8 is provided at a position farther from the active layer than the p-type cap layer 8, and the p-type optical guide layer 9 is closer to the active layer than the p-type optical guide layer 9. It is very preferable to provide the p-type cladding layer 10 made of a nitride semiconductor containing Al having a bandgap larger than that of the p-type optical guide layer 9 at distant positions. Moreover, the film thickness of the p-type cap layer 8 is 0.1 μm.
Since it is set as thin as m or less, it does not act as a carrier barrier, and holes injected from the p layer can pass through the p-type cap layer 8 due to the tunnel effect, so that the active layer can be efficiently formed. The output of the LD is improved by recombining. That is, since the injected carriers have a large band gap energy of the p-type cap layer 8, the carriers do not overflow into the active layer even if the temperature of the semiconductor element rises or the injection current density increases, and p Since it is blocked by the mold cap layer 8, carriers are accumulated in the active layer, and it is possible to efficiently emit light. Therefore, even if the temperature of the semiconductor element rises, the light emission efficiency is less likely to decrease, so that the LD having a low threshold current can be realized.
In addition, in the present invention, the layer above the active layer 7 has a most preferable structure in which it easily oscillates in the nitride semiconductor when the LD is formed. However, in the present invention, the structure above the active layer 7 is the p-type layer. Is not specifically defined.

Finally, on the p-type cladding layer 10, 10
At 50 ° C., the p-type contact layer 11 made of Mg-doped p-type GaN is grown to a film thickness of 0.5 μm. The p-type contact layer 11 is a p-type In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦
Y, X + Y ≦ 1), preferably Mg
The most preferable ohmic contact with the p-electrode 21 is obtained by using GaN doped with. Note that examples of the material of the p-electrode which can obtain a preferable ohmic contact with the p-type contact layer include Ni, Pd, Ni / Au and the like.

After the reaction is completed, the temperature is lowered to room temperature, and the wafer is further heated to 700 ° C. in a reaction vessel in a nitrogen atmosphere.
Annealing is performed at 0 ° C. to further reduce the resistance of the p-type layer.

After the annealing, the wafer was taken out of the reaction container, and the uppermost p-type contact layer 11 and the p-type clad layer 10 were etched by an RIE apparatus to obtain a stripe width of 4 μm as shown in FIG. It has a ridge shape. As described above, by forming the p-type layer above the active layer into a stripe ridge shape, the light emission of the active layer is concentrated under the stripe ridge, and the threshold value is lowered. In particular, it is preferable that the layer above the p-type nitride semiconductor layer containing Al, which is above the active layer, has a ridge shape. After the ridge is formed, a mask is formed on the surface of the ridge, and as shown in FIG. 3, the surface of the n-type contact layer 3 is exposed by making the stripe ridge symmetrical.

Next, p electrodes 21 made of Ni and Au are formed in stripes on the surface of the p-type contact layer 11. On the other hand, the n electrode 22 made of Ti and Al is formed into a stripe-shaped n
It is formed on almost the entire surface of the mold contact layer 3. The term "almost entire surface" means an area of 80% or more.

Next, as shown in FIG.
Si is formed on the surface of the nitride semiconductor layer exposed between the electrode 21 and
An insulating film 30 made of O ₂ is formed, and a pad electrode 23 electrically connected to the p-electrode 21 via the insulating film 30 is formed. The pad electrode 23 has a function of substantially expanding the surface area of the p-electrode 21 so that the p-electrode side can be wire-bonded.

As described above, the wafer on which the n-electrode and the p-electrode are formed is transferred to the polishing apparatus, and the sapphire substrate 1 on the side where the nitride semiconductor is not formed is lapped by using the diamond abrasive. The thickness of the substrate is 50 μm. After lapping, the substrate surface is mirror-finished by polishing with 1 μm with a finer polishing agent.

After polishing the substrate, scribe the polishing surface side,
Cleavage is performed in a bar shape in a direction perpendicular to the striped electrode, and a resonator is formed on the cleaved surface. The cleavage plane is the surface of the nitride semiconductor surface grown on the sapphire substrate.

[Outer 1] Face. The outer one surface is a surface corresponding to a quadrangular surface (M surface) corresponding to a side surface of the hexagonal prism when the nitride semiconductor is approximated by a regular hexagonal prism hexagonal system. In addition, the end face may be etched by a dry etching means such as RIE to manufacture the resonator. In addition to this, it is also possible to create the cleaved surface by mirror polishing.

After cleavage, a dielectric multilayer film made of SiO ₂ and TiO ₂ was formed on the cavity surface, and finally the bar was cut in the direction parallel to the p electrode to obtain a laser chip. Next, the chip was placed face-up (the substrate and the heat sink faced each other) on the heat sink, each electrode was wire-bonded, and laser oscillation was attempted at room temperature. The threshold current density was 1.5 kA / With a cm ² and a threshold voltage of 6 V, continuous oscillation with an oscillation wavelength of 405 nm was confirmed, and continuous oscillation for 3 days was confirmed.

[Embodiment 2] In Embodiment 1, after the n-type light guide layer 6 is grown, the surface of the n-type light guide layer 6 is slightly polished with an abrasive containing diamond powder.
When the surface of the n-type light guide layer was observed in the same manner after polishing, a surface roughness of about 50 Å could be observed. After that, when an active layer, a p-type layer and the like were grown in the same manner as in Example 1 to obtain a laser device, the threshold current density was 1.5 kA / cm ² , and the threshold voltage was 6 V.
We confirmed continuous oscillation for one day. It is speculated that this is because the life of the product was slightly shortened due to the increase in the unevenness.

[Third Embodiment] The step of growing the n-type optical guide layer 6 in the first embodiment is performed as follows. That is, maintaining the temperature at 1030 ° C., the n-type optical guide layer 6 made of Si-doped n-type GaN doped with Si at 8 × 10 ¹⁸ / cm ³
Is grown at a growth rate of 800 Å / min for 0.16 μm. At the same time as the growth of 0.16 μm, the flow rate of only the silane gas was increased without stopping the TMG gas and the ammonia gas, and the optical guide layer was continuously formed to 3
After growing for 0 second, the optical guide layer having a film thickness of the last 400 Å is doped with Si at a high concentration. The Si concentration of the n-type light guide layer for the last 400 Å was 1 × 10 ²¹ / cm ³ . After the growth, the wafer was taken out of the reaction container, and the surface roughness was measured in the same manner as in Example, and it was 40 Å. After that, an active layer and a p-type layer were grown on this n-type optical guide layer in the same manner as in Example 1 to produce a laser device, and a laser device having almost the same characteristics as in Example 1 was produced. did it.

[Embodiment 4] The step of growing the n-type optical guide layer 6 in Embodiment 1 is performed as follows. That is, maintaining the temperature at 1030 ° C., the n-type optical guide layer 6 made of Si-doped n-type GaN doped with Si at 8 × 10 ¹⁸ / cm ³
At the same growth rate of 800 Å / min, 0.16 μm and 0.16 μm, and at the same time, the flow rate of the source gas was doubled and the light guide layer was continuously formed at a growth rate of 1600 Å / min. 15
The optical guide layer having a thickness of 400 angstroms is grown at a doubling growth rate. After the growth, the wafer was taken out of the reaction container, and the surface roughness was measured in the same manner as in the example, and it was 30 Å. After that, an active layer and a p-type layer were grown on this n-type optical guide layer in the same manner as in Example 1 to produce a laser device, and a laser device having almost the same characteristics as in Example 1 was produced. did it.

As described above, in Examples 3 and 4, the wafer is taken out from the reaction container in order to measure the surface roughness of the n-type optical guide layer after it is grown. However, the actual laser device is taken out from the reaction container. Instead, the nitride semiconductor layer is continuously grown up to the p-type contact layer on the substrate.

[Embodiment 4] In Embodiment 1, the etching rate is changed to change the surface roughness of the n-type optical guide layer 6 to 10.
A laser device was obtained in the same manner except that it was set to 0 angstrom, and it was confirmed that continuous oscillation for 1 hour was performed at a threshold current density of 1.5 kA / cm ² and a threshold voltage of 6V.

[Embodiment 5] A laser element was obtained in the same manner as in Embodiment 2 except that the polishing agent was changed and the surface roughness of the n-type optical guide layer 6 was set to 150 Å. Continuous oscillation was confirmed. There was not, but pulse width 200μ
Oscillation was confirmed for 100 days with a pulse current of s and a pulse period of 2 ms.

[0050]

As described above, in the nitride semiconductor device of the present invention, the output of the device is remarkably improved by contacting the n-type layer having fine irregularities and growing the active layer having the quantum structure. . It is speculated that this is because the active layer containing indium is likely to have a quantum dot structure or a quantum box structure. Therefore, it is possible to realize a laser device having a high output and a long life. Due to the improvement of the laser element, the LED element used under a more lenient condition than the laser element has higher reliability. In addition, the technology of the present invention is applicable not only to light emitting devices such as LEDs and LDs but also to transistors and FEs.
It goes without saying that the present invention can be applied to all electronic devices using nitride semiconductors such as T and MOS.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing one structure of a conventional laser element.

FIG. 2 is a schematic cross-sectional view showing a structure near an active layer of a nitride semiconductor device according to the present invention.

FIG. 3 is a schematic cross-sectional view showing the structure of a laser device according to an embodiment of the present invention.

[Explanation of symbols]

1 ... Sapphire substrate 2 ... Buffer layer 3 ... n-type contact layer 4 ... Crack prevention layer 5 ... n-type clad layer 6 ... n type light guide layer 7 ... Active layer 8: p-type cap layer 9 ... p-type optical guide layer 10 ... p-type clad layer 11 ... p-type contact layer 21 ... p electrode 22 ... n electrode 23 ... Pad electrode 30 ... Insulating film

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-61-22085 (JP, A) JP-A-5-21903 (JP, A) JP-A-3-34594 (JP, A) JP-A-5- 183230 (JP, A) JP-A-6-112122 (JP, A) 9p-ZF-1, 1996 (1996) Autumn Proceedings of 57th Annual Meeting of the Society of Applied Physics, Japan, 1996 September, pp. 254 9p-ZF-2, 1996 (1996) Autumn Proceedings of 57th Annual Meeting of Japan Society of Applied Physics, 1st volume, Japan, September 1996, pp. 254, 9p-ZF-9 , 1996 (1996) Autumn Proceedings of 57th Annual Meeting of the Japan Society of Applied Physics, Volume 1, Japan, September 1996, p. 253 (58) Fields investigated (Int.Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 33/00

Claims (8)

(57) [Claims] 1. In a nitride semiconductor device having an active layer having a quantum structure formed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the active layer has a well layer made of InGaN. Then, the active layer is formed in contact with the n-type nitride semiconductor layer having fine irregularities on the surface thereof, and the InGa
A nitride semiconductor device, wherein N has a concavo-convex region, and is provided with a quantum structure by confining carriers in the lateral direction in the plane of the active layer. 2. A nitride semiconductor device having an active layer having a quantum structure formed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the active layer contains In. The active layer is formed in contact with the n-type nitride semiconductor layer having the well layer made of, and the surface of which is provided with fine irregularities, thereby forming an indium-rich region and an indium poor region in the active layer surface. Then, the nitride semiconductor device is provided with a quantum structure by confining lateral carriers. 3. The active layer has unevenness, has the indium rich region and the indium poor region, and is provided with a quantum structure by lateral confinement of carriers. Nitride semiconductor device. 4. The nitride semiconductor device according to claim 2, wherein the well layer made of a nitride semiconductor containing In is InGaN. 5. The nitride semiconductor device according to claim 1, wherein the average step of the unevenness on the surface of the n-type nitride semiconductor layer is in the range of 10 Å to 100 Å. 6. The nitride semiconductor device according to claim 1, wherein the well layer has a film thickness of 70 angstroms or less. 7. A step of, after growing an n-type nitride semiconductor layer, providing fine irregularities on the surface of the n-type nitride semiconductor layer, and contacting the n-type nitride semiconductor layer provided with the irregularities. A step of growing an active layer having a quantum structure and a well layer made of InGaN, wherein the average step of the unevenness is in the range of 10 Å to 100 Å. How to grow. 8. The step of providing the irregularities is performed so that fine irregularities are formed on the outermost surface of the nitride semiconductor layer after growth.
The method for growing a nitride semiconductor according to claim 7, wherein a type nitride semiconductor layer is grown.