JP5726836B2 - Semiconductor light emitting device - Google Patents

Description

  Embodiments described herein relate generally to a semiconductor light emitting device.

  Group III nitride semiconductors have been put into practical use as light-emitting elements such as blue light-emitting diodes (LEDs) and blue-violet semiconductor lasers (LDs). In a light-emitting element using a group III nitride semiconductor, the light emission efficiency decreases as the wavelength becomes longer than that of blue light. For example, the light emission efficiency of a green light-emitting element is significantly lower than the light emission efficiency of a blue light-emitting element.

JP 2007-19455 A

  Embodiments of the present invention provide a semiconductor light emitting device having high luminous efficiency even at a long wavelength.

According to the implementation mode of the present invention, the n-type semiconductor layer, a p-type semiconductor layer, a semiconductor light-emitting device comprising a light emitting unit, it is provided. The n-type semiconductor layer and the p-type semiconductor layer include a nitride semiconductor. The light emitting unit includes a first light emitting layer, a first barrier layer, a first cap layer, and an n-side barrier layer. The first light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer, and is juxtaposed in a plane perpendicular to the first direction from the n-type semiconductor layer toward the p-type semiconductor layer. A first well layer region containing In at a composition ratio of 20 atomic percent or more in the group III element, and a first non-well layer region having an In composition ratio lower than that of the first well layer region. Including nitride semiconductor. The first barrier layer is provided between the first light emitting layer and the p-type semiconductor layer, and has a band gap energy larger than a band gap energy of the first well layer region. Wherein the first cap layer of the first barrier layer and the first well layer region contacting to provided in the first non-well layer regions between said first well layer region and the first barrier layer There is no space in between . The n-side barrier layer is provided between the first light emitting layer and the n-type semiconductor layer, and has a band gap energy larger than a band gap energy of the first well layer region. The peak wavelength of the emitted light is 500 nanometers or more.

FIG. 1A and FIG. 1B are schematic cross-sectional views illustrating the configuration of the semiconductor light emitting device according to the first embodiment. FIG. 2A and FIG. 2B are schematic plan views illustrating the configuration of the semiconductor light emitting element according to the first embodiment. It is a typical sectional view which illustrates the composition of the semiconductor light emitting element concerning an example. FIG. 4A and FIG. 4B are transmission electron micrographs illustrating the configuration of the semiconductor light emitting device according to the example. It is a table | surface which illustrates the structure of the semiconductor light-emitting device based on an Example. It is a transmission electron microscope photograph figure which illustrates the structure of another semiconductor light-emitting device based on an Example. It is a typical sectional view which illustrates the composition of the semiconductor light emitting element of a reference example. It is a transmission electron microscope photograph figure which illustrates the structure of the semiconductor light emitting element of a reference example. It is a graph which illustrates the characteristic of a semiconductor light emitting element. It is a graph which illustrates the characteristic of a semiconductor light emitting element. FIG. 11A and FIG. 11B are schematic cross-sectional views illustrating the configuration of a semiconductor light emitting element of a reference example. FIG. 6 is a flowchart illustrating a method for manufacturing a semiconductor light emitting element according to a third embodiment. FIG. 13A to FIG. 13D are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting element according to the third embodiment. It is a flowchart figure which illustrates another manufacturing method of the semiconductor light-emitting device based on 3rd Embodiment. FIG. 15A to FIG. 15D are schematic cross-sectional views in order of the processes, illustrating a method for manufacturing another semiconductor light emitting element according to the third embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic cross-sectional views illustrating the configuration of the semiconductor light emitting device according to the first embodiment.
FIG. 2A and FIG. 2B are schematic plan views illustrating the configuration of the semiconductor light emitting element according to the first embodiment.
1A and 1B are cross-sectional views corresponding to the cross section taken along the line A1-A2 of FIG. 2A or the cross section taken along the line B1-B2 of FIG.

  As shown in FIG. 1A, the semiconductor light emitting device 110 according to this embodiment includes an n-type semiconductor layer 10, a p-type semiconductor layer 20, and between the n-type semiconductor layer 10 and the p-type semiconductor layer 20. And the light emitting unit 30 provided in the.

  Here, a direction from the n-type semiconductor layer 10 toward the p-type semiconductor layer 20 is defined as a Z-axis direction (first direction). One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

The n-type semiconductor layer 10 and the p-type semiconductor layer 20 include a nitride semiconductor.
The light emitting unit 30 has a single quantum well (SQW) structure or a multiple quantum well (MQW) structure. In the semiconductor light emitting device 110 shown in FIG. 1A, the light emitting unit 30 has an MQW structure.

The light emitting unit 30 includes a plurality of light emitting layers 32 (a layer including a well layer) stacked along the Z-axis direction, and a barrier layer 31 provided between the plurality of light emitting layers 32. The light emitting layer 32 includes a nitride semiconductor.
In the specification of the present application, “lamination” includes not only the case of direct stacking but also the case of stacking by inserting other layers.

  The light emitting layer 32 closest to the n-type semiconductor layer 10 among the light emitting layers 32 is referred to as a first light emitting layer LE1. Of the barrier layers 31, the barrier layer 31 closest to the n-type semiconductor layer 10 is defined as an n-side barrier layer BLn. The i-th barrier layer BLi (i is an integer of 1 or more) is provided between the i-th light emitting layer LEi and the p-type semiconductor layer 20.

  Each of the light emitting layers 32 has a well layer region 34 and a non-well layer region 33 juxtaposed in a plane perpendicular to the first direction (in the XY plane). The well layer region 34 has an In composition ratio in the group III element of 20% (atomic percent) or more and contains In. The non-well layer region 33 has a lower In composition ratio than the well layer region 34. The In composition ratio in the non-well layer region 33 is substantially the same as, for example, the In composition ratio in the barrier layer 31.

  That the In composition ratio in the well layer region 34 is 20% or more corresponds to the well layer region 34 having a band gap energy corresponding to light of a green color wavelength. The In composition ratio in the well layer region 34 is 20% or more and 28% or less. That is, the well layer region 34 emits light having a wavelength of 500 nanometers (nm) or more and 560 nm or less.

2A and 2B schematically illustrate the pattern shapes of the well layer region 34 and the non-well layer region 33 in one light emitting layer 32. FIG.
As in the pattern illustrated in FIG. 2A, for example, in one light emitting layer 32, an independent island-shaped well layer region 34 is provided in the non-well layer region 33.
As in the pattern illustrated in FIG. 2B, for example, in one light emitting layer 32, an independent island-shaped non-well layer region 33 is provided in the well layer region 34.

  As described above, the well layer region 34 may be provided continuously or discontinuously (for example, in an island shape). The non-well layer region 33 may be provided continuously or discontinuously (for example, in an island shape). The pattern shapes of the well layer region 34 and the non-well layer region 33 are arbitrary.

  As described above, the light emitting unit 30 in the semiconductor light emitting device 110 includes the first light emitting layer LE1, the n-side barrier layer BLn, and the first barrier layer BL1.

  As illustrated in FIG. 1A, the first light emitting layer LE <b> 1 is provided between the n-type semiconductor layer 10 and the p-type semiconductor layer 20. The first light emitting layer LE1 includes a nitride semiconductor. The first light emitting layer LE1 includes a first well layer region WR1 and a first non-well layer region NR1. The first well layer region WR1 and the first non-well layer region NR1 are juxtaposed in a plane perpendicular to the first direction (in the XY plane). The first well layer region WR1 contains In at a composition ratio of 20 atomic percent or more in the group III element. The In composition ratio of the first non-well layer region NR1 is lower than the In composition ratio of the first well layer region WR1. The In composition ratio in the first non-well layer region NR1 is, for example, substantially the same as the In composition ratio in the n-side barrier layer BLn and the first barrier layer BL1. For example, the first non-well layer region NR1 is a layer that does not substantially contain In, and the In composition ratio of the first non-well layer region NR1 is substantially zero.

  The first barrier layer BL1 is provided between the first light emitting layer LE1 and the p-type semiconductor layer 20, and has a band gap energy larger than the band gap energy of the first well layer region WR1.

  The n-side barrier layer BLn is provided between the first light emitting layer LE1 and the n-type semiconductor layer 10, and has a band gap energy larger than the band gap energy of the first well layer region WR1.

In the specific example, the light emitting unit 30 further includes a second light emitting layer LE2 and a second barrier layer BL2.
The second light emitting layer LE2 is provided between the first barrier layer BL1 and the p-type semiconductor layer 20. The second light emitting layer LE2 includes a nitride semiconductor. The second light emitting layer LE2 includes a second well layer region WR2 and a second non-well layer region NR2 juxtaposed in a plane perpendicular to the first direction. The second well layer region WR2 contains In at the same In composition ratio as the In composition ratio in the first well layer region WR1. The In composition ratio in the second non-well layer region NR2 is lower than the In composition ratio in the second well layer region WR2.

  The fact that the In composition ratio of the second well layer region WR2 is the same as the In composition ratio of the first well layer region WR1 means that the wavelength band of light emitted from the second well layer region WR2 is emitted from the first well layer region WR1. It means that it is substantially the same as the wavelength band of the light to be emitted. That is, the light emitted from the first well layer region WR1 has a green color, and the light emitted from the second well layer region WR2 also has a green color. For example, when the light emitted from the first well layer region WR1 is green, the light emitted from the second well layer region WR2 is not blue, not yellow, and not red.

  The second barrier layer BL2 is provided between the second light emitting layer LE2 and the p-type semiconductor layer 20, and has a band gap energy larger than the band gap energy of the second well layer region WR2.

  In the specific example, the light emitting unit 30 further includes a third light emitting layer LE3, a third barrier layer BL3, a fourth light emitting layer LE4, and a fourth barrier layer BL4. The third light emitting layer LE3 includes a third well layer region WR3 and a third non-well layer region NR3 juxtaposed in the XY plane. The fourth light emitting layer LE4 includes a fourth well layer region WR4 and a fourth non-well layer region NR4 juxtaposed in the XY plane.

Thus, the light emitting unit 30 can include N (N is an integer of 2 or more) light emitting layers 32 and N barrier layers 31.
In i of 2 or more and N or less, the light emitting unit 30 is provided between the (i-1) th barrier layer BL (i-1) and the p-type semiconductor layer 20, and is in a plane perpendicular to the first direction. The i-th well layer region WRi containing In at the same In composition ratio as the In composition ratio in the (i-1) -th well layer region WR (i-1) juxtaposed in FIG. Band gap energy of the i-th well layer region WRi provided between the i-th light emitting layer LEi including the i-th non-well layer region NRi having a low composition ratio, and the i-th light emitting layer LEi and the p-type semiconductor layer 20. And an i-th barrier layer BLi having a larger band gap energy.

  The In composition ratio of the i-th well layer region WRi is the same as the In composition ratio in the (i-1) -th well layer region WR (i-1). The wavelength band of light emitted from the i-th well layer region WRi is This means that the wavelength band of the light emitted from the (i-1) th well layer region WR (i-1) is substantially the same. That is, the light emitted from the (i-1) -th well layer region WR (i-1) has a green color, and the light emitted from the i-th well layer region WRi also has a green color.

  Thus, in the semiconductor light emitting device 110, the well layer region 34 and the non-well layer region 33 are provided in each of the light emitting layers 32 of the light emitting unit 30. That is, instead of using a well layer continuous over the entire surface of the light emitting layer 32, a region where the well layer is provided (well layer region 34) and a region where the well layer is not provided (non-well layer) in the plane of the light emitting layer 32 Region 33).

  The inventor does not use a continuous well layer over the entire surface of the light emitting layer 32 in a green color in which the light emission wavelength of the light emitting layer 32 is longer than blue, that is, when the In composition ratio is as high as 20% or more, A region where the well layer is provided in the plane of the light emitting layer 32 (well layer region 34) and a region where the well layer is not provided (non-well layer region 33) are provided, and the well layer is in the XY plane. It has been found that the luminous efficiency increases when there is a divided portion.

  The well layer region 34 has a portion with a width W of 50 nm or more in the XY plane. In the case where the plurality of light emitting layers 32 are provided, the well layer region 34 in at least one of the plurality of light emitting layers 32 has a portion having a width W of 50 nm or more in the XY plane.

  The well layer region 34 and the non-well layer region 33 can be distinguished from, for example, a transmission electron microscope (TEM) photograph of a cross section of the light emitting unit 30.

  As will be described later, the well layer region 34 in the light emitting layer 32 is formed, for example, by forming a base layer (for example, an InGaN layer) to be the well layer region 34 and then partially forming a cap layer on the base layer, It can be formed by a method of eliminating In (reducing the In composition ratio) from the base layer in a region not covered with the cap layer. As a result, the portion of the base layer covered by the cap layer becomes the well layer region 34, and the portion of the base layer not covered by the cap layer becomes the non-well layer region 33.

  That is, as shown in FIG. 1B, in the semiconductor light emitting device 110a according to this embodiment, the cap layer 35 is provided on the well layer region 34 (on the p-type semiconductor layer 20 side). The cap layer 35 is not provided in the non-well layer region 33.

As described above, the light emitting unit 30 includes the first light emitting layer LE1, the n-side barrier layer BLn, the first barrier layer BL1, and the first cap layer CL1.
The first light emitting layer LE1 is provided between the n-type semiconductor layer 10 and the p-type semiconductor layer 20, and is juxtaposed in a plane perpendicular to the first direction, and includes a first well layer region WR1 containing In. And a first non-well layer region NR1 having an In composition ratio lower than that of the first well layer region WR1. The first light emitting layer LE1 includes a nitride semiconductor.

  The n-side barrier layer BLn is provided between the first light emitting layer LE1 and the n-type semiconductor layer 10, and has a band gap energy larger than the band gap energy of the first well layer region 34.

  The first barrier layer BL1 is provided between the first light emitting layer LE1 and the p-type semiconductor layer 20, and has a band gap energy larger than the band gap energy of the first well layer region.

  The first cap layer CL1 is in contact with the first well layer region 34 between the first well layer region 34 of the first light emitting layer LE1 and the first barrier layer BL1.

  Further, the light emitting unit 30 further includes a second light emitting layer LE2, a second barrier layer BL2, and a second cap layer CL2.

  The second light emitting layer LE2 is provided between the first barrier layer BL1 and the p-type semiconductor layer 20, and is arranged in parallel in a plane perpendicular to the first direction, and the In composition ratio in the first well layer region WR1. The second well layer region WR2 containing In at the same In composition ratio and the second non-well layer region NR2 having an In composition ratio lower than that of the second well layer region WR2. The second light emitting layer LE2 includes a nitride semiconductor.

  The second barrier layer BL2 is provided between the second light emitting layer LE2 and the p-type semiconductor layer 20, and has a band gap energy larger than the band gap energy of the second well layer region WR2.

  The second cap layer CL2 is in contact with the second well layer region WR2 between the second well layer region WR2 of the second light emitting layer LE2 and the second barrier layer BL2.

  In the semiconductor light emitting device 110a, the light emitting unit 30 further includes a third light emitting layer LE3, a third barrier layer BL3, a third cap layer CL3, a fourth light emitting layer LE4, a fourth barrier layer BL4, 4 cap layer CL4. The third light emitting layer LE3 includes a third well layer region WR3 and a third non-well layer region NR3 juxtaposed in the XY plane. The fourth light emitting layer LE4 includes a fourth well layer region WR4 and a fourth non-well layer region NR4 juxtaposed in the XY plane. The third cap layer CL3 is in contact with the third well layer region WR3 between the third well layer region WR3 of the third light emitting layer LE3 and the third barrier layer BL3. The fourth cap layer CL4 is in contact with the fourth well layer region WR4 between the fourth well layer region WR4 of the fourth light emitting layer LE4 and the fourth barrier layer BL4.

As described above, the light emitting unit 30 can include the N light emitting layers 32, the N barrier layers 31, and the N cap layers 35.
In i of 2 or more and N or less, the light emitting unit 30 is provided between the (i-1) th barrier layer BL (i-1) and the p-type semiconductor layer 20, and is in a plane perpendicular to the first direction. The i-th well layer region WRi containing In at the same In composition ratio as the In composition ratio in the (i-1) -th well layer region WR (i-1) juxtaposed in FIG. Band gap energy of the i-th well layer region WRi provided between the i-th light emitting layer LEi including the i-th non-well layer region NRi having a low composition ratio, and the i-th light emitting layer LEi and the p-type semiconductor layer 20. An i-th cap in contact with the i-th well layer region WRi between the i-th barrier layer BLi having a larger band gap energy, the i-th well layer region WRi of the i-th light emitting layer LEi, and the i-th barrier layer BLi. A layer CLi.

  At this time, the light emitted from the i-th well layer region WRi means that the In composition ratio of the i-th well layer region WRi is the same as the In composition ratio in the (i-1) -th well layer region WR (i-1). This means that the wavelength band is substantially the same as the wavelength band of light emitted from the (i-1) th well layer region WR (i-1).

  Thus, also in the semiconductor light emitting device 110a, a region where the well layer is provided (well layer region 34) and a region where the well layer is not provided (non-well layer region 33) are provided in the plane of the light emitting layer 32. Since the well layer is divided in the XY plane, even if the In composition ratio in the well layer region 34 is 20% or more of the green color, crystal defects are suppressed, and as a result, the luminous efficiency is improved. A high semiconductor light emitting device can be obtained.

  As will be described later, the cap layer 35 can be observed by TEM. However, the detection of the cap layer 35 may be difficult depending on the performance of the TEM.

(Example)
Hereinafter, semiconductor light emitting devices according to examples of the first embodiment will be described.
FIG. 3 is a schematic cross-sectional view illustrating the configuration of the semiconductor light emitting element according to the example.
As shown in FIG. 3, in the semiconductor light emitting device 111 according to the example, for example, a substrate 5 is provided. For example, sapphire is used for the substrate 5.

  The surface of the substrate 5 is processed into an uneven shape. A buffer layer 6 is provided on the substrate 5. For example, GaN is used for the buffer layer 6. An n-type semiconductor layer 10 is provided on the buffer layer 6. For the n-type semiconductor layer 10, for example, GaN doped with Si is used. The n-type semiconductor layer 10 becomes an n-side contact layer.

For example, a stacked film 60 is provided on the n-type semiconductor layer 10. The laminated film 60 is a superlattice layer, for example. The stacked film 60 includes a plurality of first layers 61 and a plurality of second layers 62 that are alternately stacked along the Z-axis direction. The first layer 61 is, for example, a GaN layer, and the second layer 62 is, for example, an In _0.07 Ga _0.93 N layer. The number of first layers 61 is 21, and the number of second layers 62 is 20.

  The light emitting unit 30 is provided on the stacked film 60. The light emitting unit 30 has the configuration described with reference to FIGS. 1A and 1B and FIGS. 2A and 2B. In the semiconductor light emitting device 111, the number of the light emitting layers 32 is eight. However, in FIG. 3, four light emitting layers 32 are drawn for simplicity. An n-side barrier layer BLn (not shown) is provided under the first light emitting layer LE1 that is closest to the n-type semiconductor layer 10 (closest to the stacked film 60). An eighth barrier layer BL8 (not shown) is provided on the uppermost eighth light emitting layer LE8.

A p-type semiconductor layer 20 is provided on the light emitting unit 30. The p-type semiconductor layer 20 includes a first p-side layer 21 in contact with the light emitting unit 30, a third p-side layer 23, a second p-side layer 22 provided between the first p-side layer 21 and the third p-side layer 23, ,including. For the first p-side layer 21, for example, Mg-doped Al _0.1 Ga _0.9 N is used. The first p-side layer 21 functions as an electron overflow suppression layer, for example. For the second p-side layer 22, for example, GaN doped with Mg is used. For the third p-side layer 23, GaN doped with Mg at a high concentration is used. The third p-side layer 23 becomes a p-side contact layer.

  A part of the n-type semiconductor layer 10 on the p-type semiconductor layer 20 side is exposed, and an n-side electrode 40 that is in electrical contact with the n-type semiconductor layer 10 is provided. Further, a p-side electrode 50 that is in electrical contact with the p-type semiconductor layer 20 is provided. The p-side electrode 50 includes a p-side transparent electrode 51 provided on the p-type semiconductor layer 20 and a p-side conductive layer 52 provided on the p-side transparent electrode 51.

  An example of a method for manufacturing the semiconductor light emitting device 111 will be described. In the method for manufacturing the semiconductor light emitting device 111, for example, a metal organic chemical vapor deposition (MOCVD) apparatus is used for crystal growth of the nitride semiconductor.

  The substrate 5 is placed on the susceptor in the reaction chamber of the MOCVD apparatus. Next, while introducing hydrogen gas, the pressure in the reaction chamber is maintained at 500 Torr. Next, the substrate 5 is heated to 1100 ° C. and held for 10 minutes.

Next, the temperature of the substrate 5 is set to 500 ° C., and hydrogen gas containing trimethylgallium (TMG) gas and NH ₃ gas are introduced. Thereby, a lower buffer layer made of polycrystalline GaN is grown on the substrate 5. The thickness of the lower buffer layer is, for example, 20 nanometers (nm).

The introduction of the TMG gas is stopped, and the temperature of the substrate 5 is raised to 1050 ° C.
Then, an upper buffer layer made of GaN is grown by introducing hydrogen gas containing TMG gas and NH ₃ gas. The thickness of the upper buffer layer is, for example, 2 micrometers (μm). The lower buffer layer and the upper buffer layer correspond to the buffer layer 6.

  Monosilane gas is introduced, and an n-type semiconductor layer 10 made of GaN doped with Si is grown on the buffer layer 6 (on the upper buffer layer).

The introduction of TMG gas and monosilane gas is stopped, the hydrogen gas is switched to nitrogen gas, and the temperature of the substrate 5 is set to 850 ° C.
Thereafter, TMG gas is introduced to grow the first layer 61 made of GaN. The thickness of the first layer 61 is, for example, 3 nm.

  Subsequently, trimethylindium (TMI) gas is further introduced. Thereby, the second layer 62 is grown. For the second layer 62, for example, InGaN having an In composition ratio of 7% (7 atomic percent) in the group III element is used. The thickness of the second layer 62 is, for example, 1 nm.

  Thereafter, the combination of the first layer 61 and the second layer 62 is repeated for a total of 19 times to further grow, and then the first layer 61 is further grown on the same conditions as described above. Thereby, the laminated film 60 in which the combination of the first layer 61 and the second layer 62 is laminated in 20 cycles is formed.

  Next, the introduction of TMG gas is stopped, and the temperature of the substrate 5 is set to 800 ° C. Thereafter, TMG gas is introduced to grow a lower barrier layer made of GaN. The thickness of the lower barrier layer is 6 nm, for example.

Next, the introduction of TMG gas is stopped, and the temperature of the substrate 5 is set to 700 ° C. Thereafter, TMG gas is introduced to grow an upper barrier layer made of GaN. The thickness of the upper barrier is, for example, 2 nm.
The lower barrier layer and the upper barrier layer correspond to the n-side barrier layer BLn.

  Subsequently, TMI gas is further introduced. Thus, a base layer made of InGaN having an In composition ratio of 25% (25 atomic percent) in the group III element is grown. The base layer is a layer that becomes the light emitting layer 32 (first light emitting layer LE1). The thickness of the base layer is 2.5 nm.

  Subsequently, the introduction of the TMI gas is stopped, and the cap layer 35 made of GaN is grown. The cap layer 35 is formed unevenly. That is, the base layer has a portion covered with the cap layer 35 and a portion not covered with the cap layer 35. The cap layer 35 is formed in an island shape, for example. The cap layer 35 is provided in a mesh shape, for example. The average thickness of the cap layer 35 is, for example, about 2 nm or less.

  Next, the introduction of TMG gas is stopped, and the temperature of the substrate 5 is raised to 800 ° C. At this time, In is released from a portion of the base layer that is not covered with the cap layer 35, and the In composition ratio in this portion decreases. In the portion of the base layer covered with the cap layer 35, In is difficult to disappear. As a result, the portion of the base layer covered with the cap layer 35 becomes the well layer region 34, and the portion of the base layer not covered with the cap layer 35 becomes the non-well layer region 33. The In concentration in the non-well layer region 33 is reduced to the same level as that of the barrier layer 31.

  Thereafter, TMG gas is introduced to grow the barrier layer 31 (first barrier layer BL1) made of GaN. The thickness of the first barrier layer BL1 is 6 nm, for example.

  Thereafter, the combination of the base layer, the cap layer 35, and the barrier layer 31 is further grown by repeating the combination a total of seven times. As a result, the light-emitting portion 30 having an eight-cycle multiple quantum well structure is formed.

Next, the introduction of TMG gas and TMI gas is stopped, and the temperature of the substrate 5 is raised to 1000 ° C.
Thereafter, hydrogen gas containing TMG gas, TMA gas and Cp ₂ Mg gas, and NH ₃ gas are introduced, and the first p-side layer 21 made of Mg-doped Al _0.1 Ga _0.9 N is grown.

Next, the introduction of TMA gas is stopped, the second p-side layer 22 made of Mg-doped GaN is grown, and then the third p-side layer 23 is grown by adjusting the flow rate of the Cp ₂ Mg gas.

  The grown substrate 5 is taken out, for example, a crystal laminated film is processed into a predetermined shape, and a p-side electrode 50 including a p-side transparent electrode 51 and a p-side conductive layer 52 and an n-side electrode 40 are formed. Then, the semiconductor light emitting device 111 is manufactured.

FIG. 4A and FIG. 4B are transmission electron micrographs illustrating the configuration of the semiconductor light emitting device according to the example.
4A is a TEM photograph of the light emitting portion 30 of the semiconductor light emitting device 111, and FIG. 4B is a view of the cap layer 35 that appears relatively clearly in the TEM photograph of FIG. 4A. A contour line is drawn.

  As shown in FIG. 4A, in the semiconductor light emitting device 111, a portion corresponding to the light emitting layer 32 (a plane parallel to the XY plane) has a high density and a low density of the photographic image. A part is observed. The density of the photographic image is low between the light emitting layers 32, and this portion corresponds to the barrier layer 31. In a portion corresponding to the light emitting layer 32 (a plane parallel to the XY plane), a portion having a high photographic image density corresponds to the well layer region 34, and a portion having a low concentration corresponds to the non-well layer region 33. The density of the image corresponding to the non-well layer region 33 is as low as the density of the image corresponding to the barrier layer 31.

  As described above, in the semiconductor light emitting device 111, the well layer continuous with the entire surface of the light emitting layer 32 is not used, but the well layer region 34 and the non-well layer region 33 are provided in the surface of the light emitting layer 32. The layer region 34 is divided in the XY plane.

  In this specific example, the low density portion of the photographic image corresponds to the barrier layer 31 and the non-well layer region 33, and the high density portion corresponds to the well layer region 34. Depending on the image processing conditions, a portion where the density of the photographic image is high may correspond to the barrier layer 31 and the non-well layer region 33, and a portion where the concentration is low may correspond to the well layer region 34. The well layer region 34 having a high In composition ratio, and the barrier layer 31 and the non-well layer region 33 having an In composition ratio lower than the well layer region 34 are different in at least the image concentration. The barrier layer 31 and the non-well layer region 33 can be distinguished.

  As shown in FIG. 4B, in the semiconductor light emitting device 111, a cap layer 35 is formed on the well layer region 34. In this TEM photograph, the cap layer 35 is clearly observed in a region having a high image density corresponding to the well layer region 34. In the present TEM photograph, the cap layer 35 is not observed in a portion where the image density is relatively low (for example, the non-well layer region 33).

  In the portion where the cap layer 35 is clearly observed, the concentration of the portion corresponding to the well layer region 34 is high, and the well layer region 34 is clear. On the contrary, in the portion where the cap layer 35 is not clearly observed, the density of the photographic image is low, the well layer region 34 is not provided, and the non-well layer region 33 is provided.

  In the plurality of light emitting layers 32 stacked in the Z-axis direction, positions in the XY plane where the well layer regions 34 are provided are different from each other. The cap layer 35 formed on the base layer is considered to be formed in an unspecified shape at an unspecified location. Since the well layer region 34 and the non-well layer region 33 are formed depending on the presence or absence of the cap layer 35, the well layer region 34 and the non-well layer region 33 are formed at unspecified locations in the XY plane. it is conceivable that.

  However, the well layer region 34 and the non-well layer region 33 are juxtaposed on the XY plane. That is, the well layer region 34 and the non-well layer region 33 are formed in the same plane in the Z-axis direction. This is because the well layer region 34 and the non-well layer region 33 are formed based on the base layer.

FIG. 5 is a table illustrating the configuration of the semiconductor light emitting device according to the example.
That is, FIG. 4 shows the maximum value tmax and the minimum value tmin of the thickness of the well layer region 34 of each light emitting layer 32 (first to eighth light emitting layers LE1 to LE8) in the semiconductor light emitting device 111. The value read from the TEM photograph of FIG. 4B is shown.

  As shown in FIG. 5, in the first light emitting layer LE1 to the eighth light emitting layer LE8, the maximum value tmax of the thickness of the well layer region 34 is 1.9 nm to 2.5 nm. On the other hand, in the first light emitting layer LE1 to the eighth light emitting layer LE8, there is one in which the minimum thickness tmin of the well layer region 34 is zero. That is, in the second light emitting layer LE2, the fifth light emitting layer LE5, and the seventh light emitting layer LE7, the minimum value tmin of the thickness of the well layer region 34 is zero. The portion where the minimum thickness tmin of the well layer region 34 is 0 corresponds to the non-well layer region 33 instead of the well layer region 34. That is, in this specific example, the well layer region 34 and the non-well layer region 33 are provided in the second light emitting layer LE2, the fifth light emitting layer LE5, and the seventh light emitting layer LE7.

  Thus, in the case where the plurality of light emitting layers 32 are provided, the well layer region 34 and the non-well layer region 33 are provided in at least one of the plurality of light emitting layers 32.

FIG. 6 is a transmission electron micrograph illustrating the configuration of another semiconductor light emitting device according to the example.
FIG. 6 is a TEM photograph of the light emitting unit 30 of another semiconductor light emitting device 112 according to the example of the first embodiment.

  The semiconductor light emitting device 112 is manufactured by changing a part of the manufacturing conditions of the semiconductor light emitting device 111. Also in the semiconductor light emitting device 112, a well layer continuous over the entire surface of the light emitting layer 32 is not used, but a well layer region 34 and a non-well layer region 33 are provided in the surface of the light emitting layer 32, and the well layer region 34 is It is divided in the XY plane. In the semiconductor light emitting device 112, the ratio of the non-well layer region 33 is larger than that of the semiconductor light emitting device 111.

  In the semiconductor light emitting device according to this embodiment, the ratio between the well layer region 34 and the non-well layer region 33 can be variously changed.

FIG. 7 is a schematic cross-sectional view illustrating the configuration of a semiconductor light emitting element of a reference example.
As shown in FIG. 7, in the semiconductor light emitting device 119 a of the first reference example, the entire surface of the light emitting layer 32 is the well layer region 34. That is, in the semiconductor light emitting device 119a, the well layer (light emitting layer 32) is provided over the entire surface of the XY plane. Also in the semiconductor light emitting device 119a, the In composition ratio in the light emitting layer 32 is 25%. Other conditions are the same as those of the semiconductor light emitting device 111.

  Such a semiconductor light emitting device 119a is manufactured by forming the barrier layer 31 on the entire surface of the base layer (the layer that becomes the light emitting layer 32) without providing the cap layer 35. That is, In in the base layer is blocked by the barrier layer 31 covering the entire surface of the base layer and does not disappear from the base layer. Thereby, a well layer (light emitting layer 32) is formed on the entire surface of the XY plane.

FIG. 8 is a transmission electron micrograph illustrating the configuration of the semiconductor light emitting device of the reference example.
As shown in FIG. 8, in the semiconductor light emitting device 119a, a defect occurs in the crystal of the light emitting unit 30. In the semiconductor light emitting device 119a, since the well layer (light emitting layer 32) is continuously provided on the entire surface, lattice strain due to lattice mismatch is likely to occur in the well layer (light emitting layer 32). Due to the lattice distortion, the crystal quality of the light emitting layer 32 is deteriorated. The deterioration of the crystal quality occurs during the crystal growth of the light emitting layer 32, and is also caused by various stresses during the formation process of the electrodes and the like after the crystal growth is completed.
As described above, when the In composition ratio in the well layer of the light emitting layer 32 is 20% or more and the light emitting layer 32 is a continuous layer on the entire surface of the XY plane, crystal defects are likely to occur.

FIG. 9 is a graph illustrating characteristics of the semiconductor light emitting device.
That is, this figure exemplifies the results of producing samples with different In composition ratios in the light emitting layer 32 and evaluating the main wave wavelength (peak wavelength) of the emitted light and the light output at that time. In the figure, the semiconductor light emitting device of the reference example in which the well layer region of the light emitting layer 32 is continuous over the entire surface of the XY plane, and the well layer region 34 and the non-well layer region 33 are provided in the light emitting layer 32. The result of the semiconductor light emitting device of the example is shown. The horizontal axis of the figure is the wavelength λ of the emission wavelength, and the vertical axis of the figure is the optical output OP when a current of 20 milliamperes (mA) is applied.

  As shown in FIG. 9, in the semiconductor light emitting device 119b of the second reference example in which the well layer region of the light emitting layer 32 is continuous over the entire surface of the XY plane and the wavelength λ is about 500 nm or less, the optical output OP Is big. However, when the well layer region of the light emitting layer 32 is continuous over the entire surface of the XY plane, the light output OP is remarkably low when the wavelength λ is longer than 500 nm. In the semiconductor light emitting device 119a of the first reference example in which the wavelength λ is larger than 500 nm, the optical output OP is reduced to a half or less compared to the semiconductor light emitting device 119b of the second reference example in which the wavelength λ is about 500 nm or less. doing.

On the other hand, in the region where the wavelength λ is longer than 500 nm, in the semiconductor light emitting device 111 according to the example in which the light emitting layer 32 has the well layer region 34 and the non-well layer region 33, the optical output OP maintains a high value. I found out that
This phenomenon was newly found by the inventors' experiments.

  The light emitting unit 30 is formed on a base layer such as GaN (for example, the n-type semiconductor layer 10). In the light emitting layer 32 of the light emitting unit 30, In is added to GaN so as to emit light having a desired wavelength. By adding In to GaN, the lattice mismatch between the GaN underlayer and the well layer containing In increases, and defects are easily generated in the crystal in the well layer.

  In the case of a blue color wavelength, the In composition ratio in the well layer of the light emitting layer 32 is about 13% to 18%. In the case of a green color wavelength, the In composition in the well layer of the light emitting layer 32 is set. The composition ratio is about 20% to 28%. For this reason, in the case of a semiconductor light emitting device that emits a green color wavelength, the lattice mismatch is particularly large, and crystal defects are particularly likely to occur. The In composition ratio of the well layer of 20% to 28% corresponds to the wavelength of light emitted from the well layer of 500 nm to 560 nm.

  As illustrated in FIG. 9, in the reference example in which the well layer region of the light emitting layer 32 is continuous over the entire surface of the XY plane, the wavelength λ is about 500 nm or less (semiconductor light emitting device 119b of the second reference example). When the wavelength is longer than 500 nm (semiconductor light emitting device 119a of the first reference example), the optical output OP is significantly reduced because the In composition ratio is high and the lattice mismatch is large. As a result, as illustrated in FIG. It is considered that such crystal defects occurred and the optical output was greatly reduced.

  On the other hand, in the semiconductor light emitting device 111, since the well layer region 34 and the non-well layer region 33 are provided in the light emitting layer 32, the lattice distortion is easily relaxed and the crystal quality is high. It is thought that the decrease was suppressed.

The configurations of the semiconductor light emitting devices 110 and 110a (semiconductor light emitting device 111 and the like) according to the present embodiment are constructed based on the above experimental facts found for the first time.
That is, a well layer continuous over the entire surface of the light emitting layer 32 is not used, but a well layer region 34 and a region in which no well layer is provided (non-well layer region 33) are provided in the plane of the light emitting layer 32. The well layer (well layer region 34) is divided in the XY plane. For this reason, crystal defects are unlikely to occur in the light emitting layer 32. Thereby, even if the In composition ratio in the well layer region 34 is 20% or more of the green color, it is considered that a crystal defect is suppressed, and as a result, a semiconductor light emitting device with high luminous efficiency is obtained.

FIG. 10 is a graph illustrating characteristics of the semiconductor light emitting device.
In the figure, in the semiconductor light emitting device, when the well layer region 34 and the non-well layer region 33 are provided in the light emitting layer 32 (solid line), the non-well layer region 33 is not provided in the light emitting layer 32. The case where it is continuous over the entire surface of the XY plane (broken line) is shown.

  As illustrated by a broken line in FIG. 10, when the non-well layer region 33 is not provided in the light emitting layer 32 and the well layer region is continuous over the entire surface of the XY plane, the wavelength λ is short, and the In When the composition ratio is low (semiconductor light emitting device 119b of the second reference example), the optical output OP is high because the lattice mismatch is small and the crystal quality is high. However, in the case where the wavelength λ is long and the In composition ratio in the well layer is high (the semiconductor light emitting device 119a of the first reference example), the lattice mismatch becomes large, the crystal quality is lowered, and the optical output OP is remarkably lowered. .

On the other hand, as illustrated by a solid line in FIG. 10, when the well layer region 34 and the non-well layer region 33 are provided in the light emitting layer 32 and the wavelength λ is short and the In composition ratio in the well layer region 34 is low (third reference In the example semiconductor light emitting device 119c), the lattice mismatch is small and the crystal quality is high, but the area ratio in the XY plane of the well layer region 34 is low. For this reason, it is considered that the light output of the semiconductor light emitting device 119c of the third reference example is lower than that of the semiconductor light emitting device 119b of the second reference example.
For this reason, it is considered that the method of dividing the well layer was not adopted in the case of the In composition ratio with a small lattice mismatch.

On the other hand, in the case where the well layer region 34 and the non-well layer region 33 are provided in the light emitting layer 32 and the wavelength λ is long and the In composition ratio in the well layer region 34 is high (semiconductor light emitting devices 110 and 110a according to the embodiment). The light output OP decreases to some extent due to the low area ratio in the XY plane of the well layer region 34, but the lattice mismatch is small and the crystal quality is high. For this reason, the light output in the semiconductor light emitting device 111 (semiconductor light emitting devices 110 and 110a) is higher than that in the semiconductor light emitting device 119a of the first reference example.
As described above, in the case of the In composition ratio having a large lattice mismatch, the merit of increasing the crystal quality is exhibited over the disadvantage that the area ratio of the well layer region 34 is reduced by dividing the well layer. The Thereby, high luminous efficiency can be obtained even at a long wavelength.

FIG. 11A and FIG. 11B are schematic cross-sectional views illustrating the configuration of a semiconductor light emitting element of a reference example.
As shown in FIG. 11A, an island-shaped crystal 39a is provided in the light emitting unit 30 of the semiconductor light emitting device 119d of the fourth reference example. The island-shaped crystal 39a can be formed by forming a layer different from the lattice constant of the underlayer by, for example, the MOCVD method on the n-type semiconductor layer 10 (cladding layer) serving as the underlayer. A structure is also known in which a base layer 39b is formed on an island-shaped crystal 39a, and an island-shaped crystal 39a is further formed thereon. The average diameter of the island-shaped crystals 39a (the average diameter at the bottom surface of the island-shaped crystals) is set to 5 nm to 30 nm. Furthermore, the structure which produces | generates white light is also known by changing light emission wavelength for every island-like crystal located in each laminated | stacked stage. Light with different wavelengths is obtained from the island-shaped crystal by changing the size of the island-shaped crystal (width along the XY plane). That is, in this configuration, the quantum effect in the island crystal is used.

  As shown in FIG. 11B, in the light emitting unit 30 of the semiconductor light emitting device 119e of the fifth reference example, a large number of well boxes WB are scattered in the barrier layer BL. The well box WB is a quantum box. For example, the width W along the XY plane of the well box WB is about 10 nm, the thickness is 5 nm, and the well box WB is a rectangular parallelepiped. The interval between the well boxes WB is, for example, 10 nm. In the light emitting unit 30, the well boxes WB are scattered with regularity. Such a well box WB is supposed to be formed by controlling the lattice constant of the layer that becomes the well box WB and the barrier layer BL. By using the well box WB, the carrier can be confined three-dimensionally and the light emission efficiency is improved.

  In the semiconductor light emitting device 119d of the fourth reference example and the semiconductor light emitting device 119e of the fifth reference example, an island crystal 39a or a well box WB is used in order to obtain a quantum effect. For this reason, in the semiconductor light emitting device 119d, the average diameter (width W along the XY plane) of the island-shaped crystal 39a is set to a relatively small value such that the quantum effect is remarkably exhibited, such as 5 nm to 30 nm. ing. In the semiconductor light emitting device 119d, the width W along the XY plane of the well box WB is set to a relatively small value in which the quantum effect is remarkably exhibited, such as about 10 nm.

  On the other hand, in the semiconductor light emitting devices 110 and 110a (for example, the semiconductor light emitting device 111) according to the present embodiment, the crystal quality deteriorates due to lattice mismatch in the light emitting layer 32 due to the well layer region 34 and the non-well layer region 33. It suppresses by providing. For this reason, the quantum effect in the XY plane in the well layer region 34 is not required. The width W of the well layer region 34 in the XY plane is arbitrary, and may be a size that does not exhibit the quantum effect. The well layer region 34 has a portion having a width W of 50 nm or more in the XY plane. For example, at least one of the first well layer region WR1 and the second well layer region WR2 has a portion having a width of 50 nm or more along a direction perpendicular to the Z-axis direction.

  In the configuration using quantum dots and quantum boxes such as island crystals and well boxes, the emission wavelength is shortened by the quantum effect. For this reason, in order to obtain the target emission wavelength (for example, green wavelength), the In composition ratio is set higher. Since the crystal quality tends to decrease as the In composition ratio increases, the light emission efficiency tends to decrease in a configuration using quantum dots or quantum boxes.

  On the other hand, in the present embodiment, since the quantum effect in the XY plane is not required, shortening of the emission wavelength is suppressed. For this reason, the In composition ratio can be set lower than in the case of using the quantum effect. Thereby, high crystal quality is obtained, and as a result, the luminous efficiency is high.

  In a structure in which a plurality of continuous well layers are stacked on the entire surface and the emission color is changed for each well layer to obtain white light, a well layer that emits light mainly in a well layer with high emission efficiency and has low emission efficiency. In the case of, substantially no light is emitted and the desired white light cannot be obtained. For this reason, an attempt to obtain white light by a configuration in which any one of the well layers is made up of a large number of quantum dots or crystallites is known. In other words, a configuration in which a long-wavelength well layer is made up of a large number of quantum dots or crystals is known in order to increase the current injection efficiency into the short-wavelength well layer by making the long-wavelength well layer discontinuous. It has been. Further, a configuration using island crystals having different wavelengths, such as the semiconductor light emitting device 119d, is known.

  On the other hand, in the semiconductor light emitting devices 110 and 110a (for example, the semiconductor light emitting device 111) according to the present embodiment, the emission colors in the plurality of light emitting layers 32 may be similar to each other. That is, the semiconductor light emitting devices 110 and 110a according to the present embodiment are not intended to obtain white light using, for example, red, blue, and green light, or light of a plurality of colors that are complementary to each other. The light emitting layer 32 is provided with a well layer region 34 and a non-well layer region 33 to suppress lattice distortion in the light emitting layer 32.

  For this reason, the In composition ratio of each well layer region 34 of the plurality of light emitting layers 32 to be stacked is substantially the same. That is, the In composition ratio in the second well layer region WR2 is substantially the same as the In composition ratio in the first well layer region WR1. However, as already described, it is only necessary that the emission color in the second well layer region WR2 and the emission color in the first well layer region WR1 are similar to each other. The In composition ratio in the second well layer region WR2 is about plus or minus 20% or less with respect to the In composition ratio in the first well layer region WR1. Thereby, the emission color in the second well layer region WR2 and the emission color in the first well layer region WR1 can be the same color.

  A configuration is also known in which a p-type semiconductor layer is grown and activation annealing is performed, and thereafter, an island-shaped crystal light-emitting layer and an n-type semiconductor layer are grown. In this configuration, the thermal degradation of the island crystals is significant, and in order to avoid thermal degradation of the light emitting layer, the island crystals (light emitting layer) grow after the growth of the p-type semiconductor layer and the activation annealing. It has been broken.

  On the other hand, in the semiconductor light emitting devices 110 and 110a according to the present embodiment, the light emitting layer 32 including the well layer region 34 is formed after the n-type semiconductor layer 10 is formed. In the semiconductor light emitting devices 110 and 110a according to the present embodiment, by providing the well layer region 34 and the non-well layer region 33 in the light emitting layer 32, for example, deterioration of crystal quality due to heat is suppressed.

  In the semiconductor light emitting devices 110 and 110a according to the present embodiment, the ratio of the area of the non-well layer region 33 to the light emitting layer 32 is desirably larger than 30%. When the ratio of the area occupied by the non-well layer region 33 to the light emitting layer 32 is 30% or less, the effect of suppressing the lattice distortion by providing the non-well layer region 33 may be reduced. The ratio of the area of the non-well layer region 33 to the light emitting layer 32 is more preferably 50% or more.

  In the case where the plurality of light emitting layers 32 are provided, the proportion of the area occupied by the non-well layer region 33 in the light emitting layer 32 in at least one of the plurality of light emitting layers 32 may be larger than 30%. Further, it is more desirable that the ratio of the non-well layer region 33 to the light emitting layer 32 in at least one of the plurality of light emitting layers 32 is 50% or more.

  The ratio of the area of the non-well layer region 33 in the light emitting layer 32 can be estimated by, for example, the TEM photographic images illustrated in FIGS. 4A and 4B and FIG.

  That is, in the TEM image, the length of the non-well layer region 33 along the X-axis direction (or Y-axis direction) with respect to the entire length (light-emitting layer 32) along the X-axis direction (or Y-axis direction). From the ratio, a value corresponding to the ratio of the area of the non-well layer region 33 in the light emitting layer 32 can be calculated.

  For example, the length along the second direction (for example, the X-axis direction or the Y-axis direction) perpendicular to the Z-axis direction of at least one of the first non-well layer region NR1 and the second non-well layer region NR2 is It is desirable that the length of the first light emitting layer LE1 and the second light emitting layer LE2 is longer than 30% of the length along the second direction. The length along the second direction perpendicular to the Z-axis direction of at least one of the first non-well layer region NR1 and the second non-well layer region NR2 is the length of the first light-emitting layer LE1 and the second light-emitting layer LE2. It is further desirable that it is 50% or more of the length along the second direction.

  In addition, a configuration (sixth reference example) that attempts to improve the light emission efficiency by making the thickness of the well layer non-uniform is known, but in this case, the region where the thickness of the well layer is zero is known. It is known that the presence of the well layer has a smaller area where the film thickness of the well layer is zero because it causes a decrease in light emission output. In such a sixth reference example, for example, the ratio of the region where the thickness of the well layer is 0 to the whole well layer is preferably 30% or less, more preferably 20% or less, and further preferably 10% or less. It has been known.

  On the other hand, in the semiconductor light emitting devices 110 and 110a according to the present embodiment, contrary to the sixth reference example, the non-well layer regions 33 are provided at a certain ratio or more, particularly under the condition that the lattice mismatch is large. Suppresses the lattice distortion that occurs.

(Third embodiment)
FIG. 12 is a flowchart illustrating the method for manufacturing the semiconductor light emitting element according to the third embodiment.
FIG. 13A to FIG. 13D are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting element according to the third embodiment.
As shown in FIGS. 12 and 13A, in the method for manufacturing the semiconductor light emitting device according to this embodiment, the first base layer BF1 including a nitride semiconductor including In on the n-type semiconductor layer 10. Is formed (step S110).

  In the specification of the present application, “to form a layer on” refers to the case where an upper layer is directly formed on the underlayer, or another layer is formed on the underlayer, and the upper layer is formed on the other layer. Forming.

  In the example shown in FIG. 13A, an n-side barrier layer BLn (for example, a GaN layer) is formed on the n-type semiconductor layer 10, and a first base layer BF1 is formed on the n-side barrier layer BLn. Has been. Furthermore, as described regarding the semiconductor light emitting device 111 according to the embodiment and the manufacturing method thereof, the stacked film 60 (for example, a superlattice layer) is formed on the n-type semiconductor layer 10 and the n-side barrier is formed on the stacked film 60. The layer BLn may be formed, and the first base layer BF1 may be formed on the n-side barrier layer BLn.

  As the first base layer BF1, for example, a crystal made of InGaN having an In composition ratio of 25% is grown. The thickness of the first base layer BF1 is not less than 2.0 nm and not more than 5.0 nm.

  As shown in FIGS. 12 and 13B, the first cap layer CL1 is formed on a part of the first base layer BF1 (step S120). For example, a crystal made of GaN is grown as the first base layer BF1. A part of the first base layer BF1 is covered with the first cap layer CL1, and the other part of the first base layer BF1 is not covered with the first cap layer CL1. The first cap layer CL1 is formed in an island shape, for example. The first cap layer CL1 is provided in a mesh shape, for example. The average thickness of the first cap layer CL1 is, for example, about 2 nm or less.

  As shown in FIG. 12 and FIG. 13C, the content ratio of In contained in the portion of the first base layer BF1 that is not covered with the first cap layer CL1 is reduced, and the first base layer BF1 Of these, the above-mentioned portion not covered with the first cap layer CL1 is changed to the first non-well layer region NR1, and the first well composed of the portion covered with the first cap layer CL1 in the first base layer BF1. A first light emitting layer LE1 including the layer region WR1 and the first non-well layer region NR1 is formed (step S130). For example, when the temperature is raised, In contained in a portion of the first base layer BF1 that is not covered with the first cap layer CL1 disappears, and the In composition ratio of this portion decreases. Thereby, for example, the first non-well layer region NR1 that is a region substantially not containing In is formed.

  As shown in FIGS. 12 and 13D, the first barrier layer BL1 is formed on the first light emitting layer LE1 and on the first cap layer CL1 (step S140). A crystal made of GaN is grown as the first barrier layer BL1. The thickness of the first barrier layer BL1 is 6 nm, for example.

  Then, the p-type semiconductor layer 20 is formed on the first barrier layer BL1 (step S150). As already described, the first p-side layer 21, the second p-side layer 22, and the third p-side layer 23 are sequentially formed as the p-type semiconductor layer 20 on the first barrier layer BL1.

  According to the method for manufacturing a semiconductor light emitting device according to this embodiment, the light emitting layer 32 having the well layer region 34 and the non-well layer region 33 can be easily and stably formed, and the light emitting layer having a high In composition ratio is also high. Crystal quality can be maintained. As a result, a semiconductor light emitting device having high light emission efficiency even at a long wavelength can be manufactured.

FIG. 14 is a flowchart illustrating another method for manufacturing the semiconductor light emitting element according to the third embodiment.
FIG. 15A to FIG. 15D are schematic cross-sectional views in order of the processes, illustrating a method for manufacturing another semiconductor light emitting element according to the third embodiment.
As shown in FIG. 14, the present manufacturing method is performed between the formation of the first barrier layer BL1 (step S140) and the formation of the p-type semiconductor layer 20 (step S150) in the manufacturing method illustrated in FIG. The following steps (step S210 to step S240) to be performed are further provided.

  As shown in FIG. 15A, the second base layer BF2 including the nitride semiconductor including In at the same In composition ratio as the In composition ratio included in the first base layer BF1 on the first barrier layer BL1. Is formed (step S210).

  As shown in FIG. 15B, the second cap layer CL2 is formed on a part of the second base layer BF2 (step S220).

  As shown in FIG. 15C, the content ratio of In contained in the portion of the second base layer BF2 that is not covered with the second cap layer CL2 is reduced, and the second base layer BF2 The above-mentioned portion not covered with the second cap layer CL2 is changed to the second non-well layer region NR2, and the second well layer region composed of the portion covered with the second cap layer CL2 in the second base layer BF2 A second light emitting layer LE2 including WR2 and the second non-well layer region NR2 is formed (step S230).

A second barrier layer BL2 is formed on the second light emitting layer LE2 and on the second cap layer CL2 (step S240).
The p-type semiconductor layer 20 is formed on the second barrier layer BL2.

  Further, formation of the base layer, formation of the cap layer 35, formation of the light emitting layer 32 including the well layer region 34 and the non-well layer region 33 by eliminating In from a part of the base layer, and the barrier layer 31 The combination of formation can be repeated any number of times. Thereby, a semiconductor light emitting device including the light emitting unit 30 having the MQW structure can be manufactured.

  According to the embodiment, it is possible to provide a semiconductor light emitting device having high luminous efficiency even at a long wavelength and a method for manufacturing the same.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strict vertical and strict parallel but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, a substrate, a buffer layer, an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a light emitting layer, a barrier layer, a well layer region, a non-well layer region, a laminated film (superlattice layer) and an electrode included in a semiconductor light emitting device With regard to the specific configuration of each element such as those described above, the present invention is similarly implemented by appropriately selecting from the well-known ranges by those skilled in the art, and is included in the scope of the present invention as long as similar effects can be obtained. .
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting devices and methods for manufacturing the same that can be implemented by those skilled in the art based on the semiconductor light-emitting devices and methods for manufacturing the same described above as embodiments of the present invention are also included in the gist of the present invention. As long as it is included, it belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 5 ... Board | substrate, 6 ... Buffer layer, 10 ... N-type semiconductor layer, 20 ... P side semiconductor layer, 21 ... 1st p side layer, 22 ... 2nd p side layer, 23 ... 3rd p side layer, 30 ... Light emitting part, 31 DESCRIPTION OF SYMBOLS ... Barrier layer, 32 ... Light emitting layer, 33 ... Non-well layer region, 34 ... Well layer region, 35 ... Cap layer, 39a ... Island crystal, 39b ... Base layer, 40 ... N-side electrode, 50 ... P-side electrode, 51 ... p-side transparent electrode, 52 ... p-side conductive layer, 60 ... laminated film, 61 ... first layer, 62 ... second layer, 110, 110a, 111, 112, 119a, 119b, 119c, 119d, 119e ... semiconductor light emitting Element, BF1, BF2 ... 1st and 2nd base layer, BL1-BL8 ... 1st-8th barrier layer, BLn ... n-side barrier layer, CL1-CL4 ... 1st-4th cap layer, NR1-NR4 ... 1st 1st to 4th non-well layer region OP ... light output, WB ... well box, WR1 to WR4 ... first to fourth well layer region, tmax ... maximum value, tmin ... minimum value

Claims (4)

An n-type semiconductor layer including a nitride semiconductor;
A p-type semiconductor layer including a nitride semiconductor;
A group III element provided between the n-type semiconductor layer and the p-type semiconductor layer and juxtaposed in a plane perpendicular to the first direction from the n-type semiconductor layer toward the p-type semiconductor layer. A first semiconductor layer including a nitride semiconductor including a first well layer region including In at an In composition ratio of 20 atomic percent or more and a first non-well layer region having an In composition ratio lower than that of the first well layer region. A light emitting layer;
A first barrier layer provided between the first light emitting layer and the p-type semiconductor layer and having a band gap energy larger than a band gap energy of the first well layer region;
Not provided between the first provided against the well layer region and the first non-well layer region and said first barrier layer between said first well layer region and the first barrier layer A first cap layer;
An n-side barrier layer provided between the first light emitting layer and the n-type semiconductor layer and having a band gap energy larger than a band gap energy of the first well layer region;
A light emitting part having a peak wavelength of emitted light of 500 nanometers or more,
A semiconductor light emitting device comprising: The peak wavelength semiconductor light emitting device according to claim 1, wherein a is less than or equal to 560 nm. The light emitting unit
The In composition ratio is the same as the In composition ratio in the first well layer region provided between the first barrier layer and the p-type semiconductor layer and juxtaposed in a plane perpendicular to the first direction. A second light-emitting layer including a nitride semiconductor including a second well layer region including In and a second non-well layer region having an In composition ratio lower than that of the second well layer region;
A second barrier layer provided between the second light emitting layer and the p-type semiconductor layer and having a band gap energy larger than a band gap energy of the second well layer region;
Not provided between the second provided against the well layer region and the second non-well layer region and the second barrier layer between said second well layer region and the second barrier layer A second cap layer;
The device according to claim 1 or 2, further comprising a. Wherein at least one of the first well layer region and the second well layer region, claims 1 to 3, the width of the direction perpendicular to the first direction and having a portion of more than 50 nm The semiconductor light-emitting device according to any one of the above.