WO2006022133A1 - Appareil de placage auto-catalytique - Google Patents

Appareil de placage auto-catalytique Download PDF

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Publication number
WO2006022133A1
WO2006022133A1 PCT/JP2005/014445 JP2005014445W WO2006022133A1 WO 2006022133 A1 WO2006022133 A1 WO 2006022133A1 JP 2005014445 W JP2005014445 W JP 2005014445W WO 2006022133 A1 WO2006022133 A1 WO 2006022133A1
Authority
WO
WIPO (PCT)
Prior art keywords
electroless plating
temperature
fluid
substrate
temperature adjusting
Prior art date
Application number
PCT/JP2005/014445
Other languages
English (en)
Japanese (ja)
Inventor
Kenichi Hara
Miho Jomen
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2006022133A1 publication Critical patent/WO2006022133A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L’invention porte sur un régulateur de température supérieure comportant une chambre de circulation de fluide de régulation de température opposée à une surface d’un substrat maintenu sur une pièce de maintien de substrat. Dans le régulateur de température supérieure, un canal d’alimentation pour la solution de placage auto-catalytique est installé pour assurer l’échange thermique entre le fluide de régulation de température et la solution de placage auto-catalytique. La solution de placage auto-catalytique est déchargée d’un côté inférieur du régulateur de température supérieure de façon à remplir l’interstice entre le régulateur de température supérieure et le substrat. De plus, un régulateur de température inférieure est disposé au dos du substrat, et un fluide de régulation de température est mis en circulation dans celui-ci. Dans le régulateur de température inférieure, l’échange thermique avec un fluide pour la partie dos, par exemple, de l’eau pure est réalisé. Ainsi, on peut réguler la température de l’eau pure et l’interstice entre le dos du substrat et le régulateur de température inférieure est rempli d’eau pure. En conséquence, dans les parties du procédé de fabrication d’un dispositif semi-conducteur, par exemple, le traitement de placage auto-catalytique se déroulant sur une surface de matériau de câblage incrustée dans un film isolant intercouche, il devient possible de constituer un film de placage auto-catalytique à l’épaisseur voulue du film avec une homogénéité élevée dans le plan et entre les plans.
PCT/JP2005/014445 2004-08-23 2005-08-05 Appareil de placage auto-catalytique WO2006022133A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004242905A JP2006057171A (ja) 2004-08-23 2004-08-23 無電解めっき装置
JP2004-242905 2004-08-23

Publications (1)

Publication Number Publication Date
WO2006022133A1 true WO2006022133A1 (fr) 2006-03-02

Family

ID=35967351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/014445 WO2006022133A1 (fr) 2004-08-23 2005-08-05 Appareil de placage auto-catalytique

Country Status (2)

Country Link
JP (1) JP2006057171A (fr)
WO (1) WO2006022133A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4571208B2 (ja) * 2008-07-18 2010-10-27 東京エレクトロン株式会社 半導体製造装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161895A (ja) * 1983-03-07 1984-09-12 株式会社　プランテツクス プリント基板のスルーホールメッキ装置
JPH05171451A (ja) * 1991-12-19 1993-07-09 Taiho Kogyo Co Ltd 無電解めっき方法
JP2003129251A (ja) * 2001-10-17 2003-05-08 Ebara Corp めっき装置
JP2004107747A (ja) * 2002-09-19 2004-04-08 Tokyo Electron Ltd 無電解メッキ装置、および無電解メッキ方法
JP2004128016A (ja) * 2002-09-30 2004-04-22 Ebara Corp 基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161895A (ja) * 1983-03-07 1984-09-12 株式会社　プランテツクス プリント基板のスルーホールメッキ装置
JPH05171451A (ja) * 1991-12-19 1993-07-09 Taiho Kogyo Co Ltd 無電解めっき方法
JP2003129251A (ja) * 2001-10-17 2003-05-08 Ebara Corp めっき装置
JP2004107747A (ja) * 2002-09-19 2004-04-08 Tokyo Electron Ltd 無電解メッキ装置、および無電解メッキ方法
JP2004128016A (ja) * 2002-09-30 2004-04-22 Ebara Corp 基板処理装置

Also Published As

Publication number Publication date
JP2006057171A (ja) 2006-03-02

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