WO2005119716A1 - Élément fritté pour condensateur électrolytique solide, élément anodisé pour condensateur électrolytique solide, condensateur électrolytique solide et procede de fabrication de ceux-ci - Google Patents

Élément fritté pour condensateur électrolytique solide, élément anodisé pour condensateur électrolytique solide, condensateur électrolytique solide et procede de fabrication de ceux-ci Download PDF

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Publication number
WO2005119716A1
WO2005119716A1 PCT/JP2005/009741 JP2005009741W WO2005119716A1 WO 2005119716 A1 WO2005119716 A1 WO 2005119716A1 JP 2005009741 W JP2005009741 W JP 2005009741W WO 2005119716 A1 WO2005119716 A1 WO 2005119716A1
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Prior art keywords
solid electrolytic
electrolytic capacitor
sintered
particles
valve metal
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PCT/JP2005/009741
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English (en)
Japanese (ja)
Inventor
Hiroaki Wada
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Pure Material Laboratory Ltd.
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Publication of WO2005119716A1 publication Critical patent/WO2005119716A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes

Definitions

  • Sintered element for solid electrolytic capacitor Sintered element for solid electrolytic capacitor, anodized element for solid electrolytic capacitor, solid electrolytic capacitor, and method for producing them
  • the present invention relates to a sintered element for an electrolytic capacitor, which can improve the withstand voltage thereof without increasing the size of the electrolytic capacitor and without reducing its capacitance,
  • the present invention relates to an anodizing element for a capacitor, an electrolytic capacitor having excellent withstand voltage using such an element, and a method for producing the same.
  • a capacitor is used to store electricity in an electric circuit and an electronic circuit of many electric products and electronic products such as a mobile phone and a personal computer, or to interrupt a direct current and generate an alternating current. It is an important element used to serve the purpose of passing.
  • the basic structure of a capacitor is shown as a structure in which a dielectric (insulator) is sandwiched between two electrodes. When a DC voltage is applied between the two electrodes, electricity called an electric charge is stored in each of the electrodes, and a current flows during storage, and stops flowing when storage is completed.
  • Capacitors for electronic circuits include plastic film capacitors, ceramic capacitors, microcapacitors, aluminum electrolytic capacitors, tantalum solid electrolytic capacitors, and electric double layer capacitors.
  • tantalum solid electrolytic capacitors are slightly more expensive than capacitors made of other materials, have extremely long service life, are small in size and have excellent high-frequency characteristics, and are compact digital devices such as mobile phones. It is a capacitor that is ideal for equipment, is currently in the spotlight, and is in high demand.
  • the solid electrolytic capacitor uses, as a positive electrode, a metal called a valve metal having a highly corrosion-resistant and insulating oxide film (passive film) formed on its surface by anodic oxidation.
  • the oxide film is used as a dielectric, and a cathode material is formed on the anodic film.
  • This is a capacitor using this as a cathode.
  • Aluminum electrolytic capacitors and tantalum electrolytic capacitors are currently in practical use.
  • the valve metal include aluminum, tantalum, niobium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony. Recently, trial production of a niobium electrolytic capacitor using niobium has started.
  • the aluminum electrolytic capacitor has a structure in which an electrolytic solution (cathode) impregnated in kraft paper or the like is sandwiched between metal aluminum foils on which an oxide film is formed and wound.
  • a tantalum solid electrolytic capacitor has a structure that utilizes the gap created when the metal tantalum powder is sintered and hardened, and can secure a high surface area. Excellent in frequency characteristics.
  • a tantalum solid electrolytic capacitor is formed by pressing a fine particle powder of tantalum (Ta) metal and sintering it in a vacuum at a high temperature. Forming a dielectric oxide film (tantalum pentoxide: TaO) layer having a thickness of about several tens of nanometers.
  • TaO tantalum pentoxide
  • Non-Patent Document 1 It is used as a denser (Non-Patent Document 1).
  • FIG. 1 is a schematic cross-sectional view of the sintered element
  • FIG. 2 is a scanning electron microscope (SEM) photograph of a fractured surface of the sintered element.
  • SEM scanning electron microscope
  • the three-dimensional space 4 has a very complicated structure, as is clear from the SEM photograph power of FIG. 2, and as a result, the surface area of the inner wall surface of the space 4 is enormous.
  • the particles that make up the tantalum metal powder are actually composed of a single particle (called a primary particle) and a particle group formed by aggregating multiple particles (called a secondary particle).
  • the three-dimensional space 4 in the sintered particles 1 has a complicated main road-like space and a branch-like space branched from it. It is composed of a three-dimensional continuous space combined with.
  • each particle 2 has a complicated shape having many irregularities, rather than a circular shape as shown in the figure, thereby further complicating the internal space. That is, the surface area of the inner wall portion forming the three-dimensional internal space is very large.
  • the porous sintered element is immersed in an electrolytic solution and anodized.
  • an electrolytic solution a solution such as phosphoric acid, nitric acid, sulfuric acid, or various carboxylic acid solutions that can easily oxidize tantalum metal by applying a voltage is used.
  • the entire inner and outer surfaces of the tantalum sintered element 1 are completely oxidized by this anodic oxidation, so that
  • This pentoxide film 5 is a passive film, and its thickness is
  • FIG. 4 shows a SEM photograph of a fractured surface of the anodized device.
  • the sintered element that has been subjected to anodizing treatment so that the SEM photographic power also contributes has a structure in which an anodized film is formed outside and metal tantalum is wrapped inside.
  • a three-dimensional space having the anodized film 5 as an inner wall is filled with a cathode material to form a cathode 6.
  • a cathode material to form a cathode 6.
  • Manganese dioxide, polythiophene, polypropylene and the like are used as the cathode material.
  • diacid manganese dilute manganese nitrate Mn (NO) with water.
  • a carbon layer 7 and a silver paste layer 8 are sequentially formed outside the cathode 6, and the cathode 6 is connected to a cathode terminal (not shown) via these layers.
  • niobium (Nb) is used instead of tantalum.
  • Niobium is the anode
  • niobium pentoxide (NbO) coating is the dielectric
  • Such a coating constitutes the cathode.
  • the niobium Z interface is unstable, and good performance cannot be obtained.
  • an oxidized niobium solid electrolytic capacitor using a conductive niobium oxide (NbO) having a low oxygen number as an anode has been experimentally manufactured. It has been confirmed that the withstand voltage is improved by using niobium oxide as the anode (Patent Document 1, Non-Patent Documents 2 and 3).
  • an overvoltage such as a surge voltage or a back electromotive voltage when the circuit switch is turned on or off, or a high ripple voltage during use. If this occurs, the element will be burned due to the overvoltage, and in some cases, a fire may occur in the equipment.
  • the capacitor ideally has an infinite impedance during the application of a direct current, so that no current flows.
  • the impedance does not become infinite even when a direct current is applied, and a current flows. This is the leakage current, which occurs at places where the anodic oxide coating is thin or where there are minute defects. Therefore, strict process control and quality control are required during the production of capacitors, and attention is paid to the formation of high quality anodized films.
  • the series (product name) is known.
  • Non-Patent Document 4 Thin tantalum wires and leads of tantalum solid electrolytic capacitors
  • Patent Document 1 Japanese Patent Application Publication No. 2002-524378
  • Non-Patent Document 1 Atsushi Ihara, Akihiko Masuda "Latest Handbook of Electronic Components and Device Mounting Technologies” Published by: R & D Planning, published December 16, 2002
  • Non-Patent Document 2 “Comparison of Niobium and Niobium Oxide Solid Electrolytic Capacitors” CARTS 2003: 23rd Capacitor And Resistor Technology Symposium, March 31—April 3, 2003
  • Non-Patent Document 3 “Regarding the electrical performance of NbO-based electrolytic capacitor powder Role of synthesis and phase formation '' CARTS 2003: 23rd Capacitor AndResistor Technology Symposium, March 31- April 3, 2003
  • Non-Patent Document 4 Kazuyuki Kanemoto “Development of Open Mode Capacitors"
  • Non-Patent Document 5 “Voltage derating for solid tantalum and niobium capacitors; ⁇ ” ARTS 2003: 23rd Capacitor AndResistor Technology symposium, March 31—April 3, 2003
  • the measures (1) and (2) described above can prevent a fire accident, the important function as a capacitor is lost, and electronic equipment incorporating the capacitor cannot be used. It becomes unusable.
  • the method of (3) can be effective as a measure for preventing ignition, but the size of the element is increased, and if it cannot be used for electronic devices that require miniaturization, it will be less powerful. This leads to higher costs.
  • a slag of NbO suboxide is formed.
  • the slag is sintered to obtain a sintered element.
  • the obtained sintered element is subjected to anodizing treatment, and the surface of the element is coated with a niobium pentoxide niobium film ( (Dielectric film).
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a solid electrolytic capacitor element that does not increase the size of the element and does not reduce the capacitance of the element. It is an object of the present invention to provide a sintered element for a solid electrolytic capacitor capable of improving a voltage, an anode element for a solid electrolytic capacitor, a solid electrolytic capacitor using these elements and having excellent withstand voltage, and a method for producing the same.
  • the present inventor has earnestly conducted experiments and studies to solve the above-described problems and achieve the object, and has obtained the following knowledge.
  • a tantalum solid electrolytic capacitor is manufactured through a number of steps as described above.
  • the cross section of the sintered particles in the element is as shown in FIG. That is, amorphous tantalum pentoxide is formed by anodic oxidation on the outside of the sintered particles, and metal tantalum is formed on the inside thereof.
  • the metal tantalum that functions as the anode When exposed to the above-mentioned overvoltage, which has a high reactivity with oxygen, the metal tantalum that functions as the anode generates heat and reacts with the surrounding oxygen to burn, causing fires in electronic equipment and other causes. .
  • the raw material tantalum powder is changed to a conductive oxide, and the oxide powder is formed and sintered.
  • a method was conceived in which the obtained oxide sintered body was subjected to anodizing treatment to obtain a conductive oxide sintered element having a tantalum pentoxide film formed on the surface.
  • the conductive oxide Ti O or
  • the powder is easily broken at the time of molding, and a metal tantalum powder tends to have a complicated shape, whereas an oxide powder tends to have a relatively simple shape. Therefore, the specific surface area of the molded element is reduced, and the capacitance value of the capacitor is reduced.
  • each particle has a complicated uneven shape, and the particles are connected while maintaining many voids by a so-called fastener effect. Thus, the effect of increasing the three-dimensional space of the molded body, maintaining a complicated uneven shape, and maintaining a large surface area could be obtained.
  • the oxide powder when the oxide powder is formed, the particles are broken into a simple shape, so that the fastener effect is significantly reduced and the formability is deteriorated. It is necessary to use a binder. It was also confirmed that the use of a strong binder caused the binder to remain as a carbon component even after sintering in a vacuum heating furnace, immediately affecting the electrical characteristics of the capacitor.
  • a metal tantalum powder is molded, the obtained molded element is sintered to form a sintered element, and the sintered element is subjected to a heat treatment, and the entire element is made of a conductive oxide.
  • a heat treatment at this stage, the shape of the metal tantalum particles constituting the molded element was not broken, so that the capacitance value of the obtained capacitor did not decrease.
  • the entire element is made of conductive oxide (Ta O or
  • the transport amount of oxygen for forming the 2 2 5 oxidized oxide film depends on the surface of the metal tantalum particles.
  • the current efficiency of anodic oxidation is improved because it may be smaller than in the case of 25.
  • thermal distortion and micro-cracks generated in the metal tantalum particles constituting the element by this heat treatment are eliminated during the subsequent anodic oxidation, and a stable anodic oxidation film can be formed.
  • a fastener effect of the particles can be obtained, so that the binder amount can be reduced.
  • oxygen has an effect of purifying the device by reacting with residual impurities in the device. In particular, it is effective in removing the residual carbon of the binder added during the preparation of the tantalum powder.
  • the anodic oxide film is electrically stabilized as compared with the case of the normal treatment, and the electric characteristics such as leakage current are improved.
  • a metal tantalum is formed and sintered to obtain a sintered element, and the obtained sintered element is subjected to anodizing treatment, so that the surface of the metal tantalum is anodized.
  • An anodized element having a tantalum film formed thereon was obtained.
  • Heat treatment was performed on this anodized element, and the case where the metal tantalum inside the anodized film was used as a conductive oxide was examined.
  • the anodic oxide film is stabilized by the aging effect of this heat treatment. That was confirmed.
  • another factor was the possibility of heat distortion and micro-cracking in a part of the anodic oxide coating.
  • the iridescence by these heat treatments can be achieved by controlling the heat treatment conditions as follows.
  • tantalum metal is converted to the desired conductive oxide TaO or Z and TaO
  • the sintered element before anodizing or the anodizing element after anodizing is heat-treated in an electric furnace.
  • the heat treatment conditions are different in each case.
  • the heating temperature is 200 ° C to 500 ° C
  • the heating time is 10 minutes to 10 hours
  • the oxygen concentration in the atmosphere is 5% to 50%.
  • the sintered element for a solid electrolytic capacitor according to the present invention is formed by sintering the conductive oxide particles of the valve metal in a state of being formed into a predetermined shape, thereby forming the conductive oxide particles. It is characterized in that the primary and secondary particles maintain the same complex asperities as the primary and secondary particles when the non-oxidized valve metal particles are molded and sintered.
  • the conductive oxide particles of the valve metal are sintered in a state of being formed into a predetermined shape, and the surface of the sintered particles is insulated.
  • the primary oxide and secondary particles constituting the acidic oxide particles are formed into non-oxidized valve metal particles, and are the same as the primary particles and secondary particles when sintered. Characterized by maintaining a complicated uneven shape.
  • the solid electrolytic capacitor according to the present invention is characterized in that the conductive oxide particles of the valve metal are sintered in a state of being formed into a predetermined shape, and the surface of the sintered particles has an insulating oxide particle.
  • a conductive film is further formed on the surface of the insulating oxide, and the conductive oxide particles are connected by sintering to form an anode.
  • Coating A capacitor structure is formed by forming a dielectric and further, the conductive film forms a cathode, and the primary particles and the secondary particles forming the oxide particles are non-oxidized valve metal particles. It is characterized by maintaining the same complex asperities as primary and secondary particles when molded and sintered.
  • valve metal particles are formed into a predetermined shape, and then sintered to form a sintered element. Then, the conductive oxide is used to obtain a sintered element for a solid electrolytic capacitor.
  • the heat treatment is preferably performed in an atmosphere having an oxygen concentration of 5% to 50%, at a heating temperature of 200 ° C to 500 ° C, and for a heating time of 10 minutes to 10 hours.
  • the valve metal particles are formed into a predetermined shape, and then sintered to form a sintered element.
  • An anodizing treatment is performed to form an insulating oxide film on the surface of the sintered element, and the obtained anodizing element is heat-treated so that the valve metal particles covered with the insulating oxide film are conductively oxidized.
  • an anodic oxidation element for a solid electrolytic capacitor is obtained.
  • the heat treatment is preferably performed in an atmosphere having an oxygen concentration of 5% to 50% at a heating temperature of 200 ° C to 500 ° C and a heating time of 10 minutes to 10 hours.
  • a constant current of a constant current value is 1 minute to 60 minutes, and preferably, a constant voltage of a constant voltage value is followed by 1 hour to 8 hours. That is.
  • the application time at the constant current is more preferably 2 minutes to 20 minutes.
  • the application time at the constant voltage is preferably 1 hour to 5 hours.
  • the valve metal particles are formed into a predetermined shape, and then sintered to form a sintered element.
  • a sintered element is formed by forming an oxide film, and the sintered element is subjected to anodizing treatment to form an insulating oxide film on the surface of the sintered element.
  • a conductive oxide film is formed, the insulating oxide film is used as a dielectric, the conductive oxide inside the dielectric acts as an anode, and the conductive oxide film outside the dielectric serves as a cathode.
  • a capacitor structure that functions as follows.
  • the valve metal particles are formed into a predetermined shape, and then sintered to form a sintered element, and the obtained sintered element is subjected to anodizing treatment.
  • an insulating oxide film on the surface of the sintered element, and heat treating the obtained anodic oxide element to make the valve metal particles covered with the insulating oxide film conductive.
  • An anodized element is formed by converting it to an oxide, a conductive oxide film is formed on the surface of the insulating oxide film of the anodized element, and the insulating oxide film is used as a dielectric. It is characterized in that a capacitor structure in which an inner conductive oxide acts as an anode and an outer conductive oxide film of the dielectric acts as a cathode.
  • the heat treatment is performed under the conditions of an oxygen concentration of 5% to 50%, a heating temperature of 200 ° C to 500 ° C, and a heating time of 10 minutes to 10 hours. It is preferred that
  • a constant current of a constant current value is 1 minute to 60 minutes, and preferably, a constant voltage of a constant voltage value is followed by 1 hour to 8 hours. That is.
  • the application time at the constant current is more preferably 2 minutes to 20 minutes.
  • the application time at the constant voltage is preferably 1 hour to 5 hours.
  • valve metal tantalum, vanadium, niobium, titanium, tungsten, hafnium, and zirconium can be used, and tantalum and niobium are more preferable.
  • the heat resistance of the solid electrolytic capacitor can be remarkably improved, and even when an overvoltage is applied. In addition, it is possible to make burning harder than ever. Further, it is possible to significantly reduce the residual carbon in the element of the solid electrolytic capacitor. Also, it is possible to reduce the leakage current of the solid electrolytic capacitor. Further, according to the production method of the present invention, a stable solid electrolytic capacitor having extremely high thermal stability can be provided.
  • FIG. 1 is a schematic cross-sectional structure diagram of a sintered element for a tantalum solid electrolytic capacitor.
  • FIG. 2 is an SEM photograph of a fractured surface of a sintered element for a tantalum solid electrolytic capacitor.
  • FIG. 3 is a schematic cross-sectional structure diagram of an anodizing element for a tantalum solid electrolytic capacitor.
  • FIG. 4 is an SEM photograph of a fractured surface of an anodizing element for a tantalum solid electrolytic capacitor.
  • FIG. 5 is an X-ray diffraction chart of sintered particles when a sintered element is heat-treated, for explaining the example of the present invention.
  • FIG. 6 is an X-ray diffraction chart of internal components of sintered particles when an anodizing element is subjected to a heat treatment, for explaining an example of the present invention.
  • FIG. 7 is a chart showing a low intensity region of the X-ray diffraction chart shown in FIG. 6. Explanation of symbols
  • the following embodiment is an example in which tantalum is used as a valve metal.
  • the average particle size of the tantalum metal powder used was 0.6 m.
  • the sintered element used in the experiment was manufactured by pressing a tantalum metal powder using a mold and sintering at 1400 ° C for 20 minutes.
  • 3mm X 3. 5mm density after sintering is about one third of the true density 5.
  • the anodizing treatment is carried out in a phosphoric acid aqueous solution having a concentration of lwt% at 60 ° C and a constant current of 35 mA / g (58 mA / m 2 ) at a constant current of about 5 hours until it reaches 40 V. , And 40 V—maintained at a constant voltage for 2 hours to obtain an anodized element.
  • the sintered element sintered element before anodization
  • the anodized element sintered element after anodization
  • the heat treatment conditions include (i) no heat treatment, (ii) 300 ° C for 1 hour, (iii) 350 ° C for 1 hour, (iv) 350 ° C x 4 hours,
  • the heat treatment conditions were (i) 400 ° C. for 30 minutes and (ii) 450 ° C. for 30 minutes.
  • the measurement of the electric characteristics was performed in an electrolytic solution by a wet method.
  • the re- (post-treatment) anodization was performed for 5 minutes at a constant current of the same current density as that of the first (main treatment) anodization, and then performed at a constant voltage of the same voltage as that of the first (main treatment) anodization. Hold for hours.
  • the formation of the conductive oxide by the heat treatment was confirmed by subjecting the heat-treated tantalum metal portion to X-ray diffraction and identifying the obtained peak.
  • the X-ray diffraction device used was MXP18VAHF (product number) manufactured by Mac Science, Inc. of the United States, and the X-ray output was
  • the ignition temperature was measured.
  • the force was measured by a glow-wire flammability tester (Model G, manufactured by Suga Test Instruments Co., Ltd.).
  • the chart in Fig. 5 is an X-ray diffraction chart when the sintered element is subjected to a heat treatment.
  • the curve indicated by A is the peak line of (i) the X-ray diffraction of the sample without heat treatment
  • the curve indicated by B is (ii) the X-ray of the sample heat-treated at 300 ° C for 1 hour.
  • the peak line of X-ray diffraction, the curve indicated by C is (iii) the peak line of X-ray diffraction of the heat-treated sample at 350 ° C X l hours
  • the curve indicated by D is (iv) X of the heat-treated sample at 350 ° CX for 4 hours.
  • the curve indicated by E is the peak line of (V) X-ray diffraction of the heat-treated sample at 350 ° C for 9 hours.
  • Vertical lines displayed at the bottom of these peak curves over three levels are Ta, Ta 0,
  • the Ta O peak position is shown.
  • the chart in Fig. 6 is an X-ray diffraction chart when a heat treatment is applied to the anodized element.
  • the curve indicated by W is the peak line of X-ray diffraction of the sintered element sample without heat treatment, and the curve indicated by X was obtained by performing anodizing treatment of the sintered element at 40VX for 2 hours.
  • the peak line of the X-ray diffraction of the anodized device sample and the curve indicated by Y are (i) the peak line of the X-ray diffraction of the sample obtained by subjecting the anodized device to a heat treatment at 400 ° C.
  • the curve shown is (ii) the peak line of X-ray diffraction of the sample obtained by subjecting the anodized element to heat treatment at 450 ° C. for 30 minutes.
  • Vertical lines displayed in three steps below these peak curves indicate the peak positions of Ta, Ta0, and TaO, respectively.
  • the conductive oxide was formed in the samples after the heat treatment at 400 ° C. for 30 minutes (curve Y) after the anodizing treatment at 40 V ⁇ 2 hours so that these peak curve forces also contributed. It has been confirmed that, after anodizing at 40VX for 2 hours, the heat treatment product at 450 ° C for 30 minutes (curve Z) further replaced all of the inside of the particles with conductive oxide.
  • FIG. 7 is a chart in which the diffraction angle 2 ° of the curves W and Z is enlarged in the vicinity of 10 degrees to 50 degrees. It is. It can be confirmed that a broad peak appears at a diffraction angle 20 of curve Z of 20 degrees to 35 degrees. This is a peak peculiar to the anodized film, and is observed in the curves X and Y. Since the peak is not a sharp peak but appears broad, it may be an amorphous film. You can check. In this curve Z, as in the case of curves X and Y, it can be confirmed that the anodized film is amorphous. This means that the anodized film can be crystallized even after further heat treatment after the anodizing treatment. This indicates that the heat treatment employed in the present invention does not cause deterioration of the anodized film.
  • the results are shown in Table 1 below.
  • various characteristics of the anodized element without heat treatment represented by the curve W as the sample I were measured, and also shown in Table 1. Note that the characteristic values shown in Table 1 are for one sintered element.
  • the measured values of the ignition temperature shown in Table 1 are the ignition temperatures obtained by external ignition.
  • a passivation film (Ta O) is formed on the surface of the sintered particles.
  • the passive body coating protects the inside and the accurate evaluation cannot be performed. Therefore, the ignition temperature when the inside of the sintered particles of the anodized element is metal tantalum, and the ignition temperature when the conductive oxide such as TaO or TaO is used.
  • pellets formed and sintered of Ta 2 O particles were used as samples II and III.
  • the conventional sintered device (Sample I) was a device in which the entire device was made of conductive oxide TaO or TaO force by heat treatment ignited at 375 ° C (Samples II and III).
  • the ignition temperature increased significantly to 545 ° C. That is, the heat resistance was significantly improved.
  • the central part of the sintered particles of the anodized element is metal tantalum. This is converted into a tantalum conductive acid TaO or TaO to form a capacitor.
  • the ignition temperature of the tantalum sintered element incorporated in the device increased from 375 ° C to 545 ° C, confirming that the heat resistance was significantly improved.
  • the measured ignition temperature of NbO is 353 ° C
  • the measured ignition temperature of Nb is 290 ° C.
  • the ignition temperature of Ta is 375 ° C, and when it is Ta O or TaO which is a conductive oxide, the ignition temperature is 545 ° C. Therefore, at least heat resistant
  • Tantalum oxide solid electrolytic capacitors are superior to niobium oxide solid electrolytic capacitors from the viewpoints of performance and ⁇ ⁇ .
  • the carbon content was 1170 at ppm for the normal treatment (conventional product).
  • the sintered element before the anodization was heat-treated at 350 ° C for 9 hours (sample II).
  • 610 At ppm it decreased to 750 at ppm in the anodized device after heat treatment at 450 ° C for 30 minutes (Sample III).
  • Example 1 shows the electrical properties of the conventional product (sample I) and the product of the present invention (samples II and III) which were normally treated.
  • the leakage current is 1.41 A in the conventional product (Sample I). It is 1.21 / ⁇ ⁇ in Sample II, which is the product of the present invention, and 0.83 A in Sample III, which is greatly improved. .
  • the solid electrolytic capacitor in the case where tantalum is used as a valve metal is described.
  • the present invention is also applied to valve metals that may constitute other solid electrolytic capacitors such as niobium. It is clear that the present invention is similarly applicable, and in that case, the same operation and effect can be obtained.
  • the heat resistance can be remarkably improved, and even when an overvoltage is applied, the solid electrolytic capacitor is compared with the conventional one. It is possible to make it extremely difficult to burn. Furthermore, it is possible to greatly reduce the residual carbon in the elements of the solid electrolytic capacitor. It is also possible to reduce the leakage current of the solid electrolytic capacitor. Further, according to the manufacturing method of the present invention, a stable solid electrolytic capacitor having extremely high thermal stability can be provided.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

Il est prévu une anode constituant un condensateur formé d'un métal valve. L'anode est convertie en oxyde conducteur par traitement thermique après formage et frittage d'un élément ou bien après anodisation de l'élément, et la résistance thermique de l'anode contre toute tension excessive appliquée au condensateur est améliorée. Ainsi, on obtient un élément fritté pour condensateur électrolytique solide et un élément d'anode pour condensateur électrolytique solide, susceptible d'améliorer la tension de résistance de l'élément condensateur électrolytique solide sans augmenter la taille des éléments ni compromettre la capacitance de l'élément. Il est également prévu un condensateur électrolytique solide utilisant ces éléments et d'une excellente tension de résistance de même qu'un procédé de fabrication de tels éléments et le condensateur.
PCT/JP2005/009741 2004-06-03 2005-05-27 Élément fritté pour condensateur électrolytique solide, élément anodisé pour condensateur électrolytique solide, condensateur électrolytique solide et procede de fabrication de ceux-ci WO2005119716A1 (fr)

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JP2004-166318 2004-06-03
JP2004166318A JP4139354B2 (ja) 2004-06-03 2004-06-03 固体電解コンデンサの製造方法および固体電解コンデンサ

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010074049A (ja) * 2008-09-22 2010-04-02 Sanyo Electric Co Ltd 固体電解コンデンサ
CN105489376A (zh) * 2016-01-14 2016-04-13 中国振华（集团）新云电子元器件有限责任公司 一种高可靠性电解电容器的制造方法

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JP2006108626A (ja) * 2004-09-10 2006-04-20 Sanyo Electric Co Ltd 固体電解コンデンサおよびその製造方法
US7649730B2 (en) * 2007-03-20 2010-01-19 Avx Corporation Wet electrolytic capacitor containing a plurality of thin powder-formed anodes
WO2010125778A1 (fr) * 2009-04-28 2010-11-04 三洋電機株式会社 Corps de pointe d'électrode de condensateur, procédé de fabrication de corps de pointe d'électrode de condensateur, condensateur et procédé de fabrication de condensateur

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JPH11150041A (ja) * 1997-11-19 1999-06-02 Hitachi Aic Inc 固体電解コンデンサの製造方法
JP2003217980A (ja) * 2002-01-18 2003-07-31 Nec Tokin Corp Ｎｂ固体電解コンデンサおよびその製造方法

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JP2003217980A (ja) * 2002-01-18 2003-07-31 Nec Tokin Corp Ｎｂ固体電解コンデンサおよびその製造方法

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Publication number Priority date Publication date Assignee Title
JP2010074049A (ja) * 2008-09-22 2010-04-02 Sanyo Electric Co Ltd 固体電解コンデンサ
CN105489376A (zh) * 2016-01-14 2016-04-13 中国振华（集团）新云电子元器件有限责任公司 一种高可靠性电解电容器的制造方法

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