WO2005112246A1 - 高電圧パルス発生回路 - Google Patents
高電圧パルス発生回路 Download PDFInfo
- Publication number
- WO2005112246A1 WO2005112246A1 PCT/JP2005/008793 JP2005008793W WO2005112246A1 WO 2005112246 A1 WO2005112246 A1 WO 2005112246A1 JP 2005008793 W JP2005008793 W JP 2005008793W WO 2005112246 A1 WO2005112246 A1 WO 2005112246A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- semiconductor switch
- voltage
- voltage pulse
- pulse generating
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
Definitions
- the present invention relates to a high-voltage pulse generation circuit capable of supplying a high-voltage pulse having an extremely short rise time and an extremely narrow pulse width, and capable of detecting a failure of a constituent circuit at an early stage.
- this high-voltage pulse generating circuit 200 has an inductor 204, a first semiconductor switch 206, and a second semiconductor switch 208 connected in series at both ends of a DC power supply 202, and This is a very simple circuit in which a force source is connected to the other end of the inductor 204 having one end connected to the anode terminal of the switch 206, and a diode 210 is connected to the gate terminal of the first semiconductor switch 206 so as to serve as an anode.
- the first semiconductor switch 206 When the second semiconductor switch 208 is turned on, the first semiconductor switch 206 also conducts, the voltage of the DC power supply unit 202 is applied to the inductor 204, and the induced energy is stored in the inductor 204. . Thereafter, when the second semiconductor switch 208 is turned off, the first semiconductor switch 206 is also turned off rapidly, so that a very narrow high voltage pulse Po is generated in the inductor 204, which rises very steeply, and the output terminal 212 And high voltage pulse Po can be extracted from 214.
- this high-voltage pulse generation circuit 200 a high-voltage pulse having a steep rise time and an extremely narrow pulse width can be obtained with a simple circuit configuration without using a plurality of semiconductor switches to which a high voltage is applied. Po can be supplied.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2004-72994
- the voltage applied to the first semiconductor switch 206 greatly depends on the load connected to the output terminals 212 and 214, if the output terminals 212 and 214 are open, the first semiconductor switch 206 When the 206 is turned off, there is a possibility that a high voltage (overvoltage) that may destroy the first semiconductor switch 206 is applied. In this case, it is conceivable to connect a snubber circuit in parallel with the first semiconductor switch 206.
- the present invention has been made in view of such a problem, and can detect a short-circuit fault of the first semiconductor switch at an early stage, and can detect a fault in another component circuit or a fault in another component. It is an object of the present invention to provide a high-voltage pulse generation circuit capable of avoiding ripples.
- the high-voltage pulse generating circuit includes an inductor, a first semiconductor switch and a second semiconductor switch connected in series at both ends of a DC power supply unit, and an anode terminal of the first semiconductor switch.
- a diode having one end connected to the other end of the inductor, a force source terminal connected to the other end of the inductor, and a gate terminal of the first semiconductor switch connected to an anode terminal.
- the voltage across the first semiconductor switch and the voltage across the second semiconductor switch is in a normal range. If it deviated al, and having a failure diagnosis circuit for stopping the driving of the pre-Symbol second semiconductor switch.
- the short-circuit fault can be detected early.
- the energy stored in the exciting inductance of the inductor is consumed by the diode, the diode does not heat up, and the diode is not thermally damaged, and an excessive current does not flow through the second semiconductor switch. That is, the first semiconductor switch does not cause a failure of another component circuit due to the short-circuit failure, and it is possible to prevent the first semiconductor switch from spreading to other components.
- a drive circuit for controlling the second semiconductor switch to be turned on and off at a predetermined switching frequency based on the input switching command signal, and the failure diagnosis circuit is provided with the first diagnosis switch.
- the input of the switching command signal to the drive circuit may be inhibited when the voltage between both ends of the semiconductor switch and the second semiconductor switch is out of a normal range.
- the failure diagnosis circuit may include a detection circuit that detects a voltage between both ends of the first semiconductor switch and the second semiconductor switch, and a detection voltage from the detection circuit.
- a discrimination circuit that compares the detected voltage with the specified voltage, outputs a drive signal when the detected voltage is within the normal range, and outputs a stop signal when the detected voltage is equal to or lower than the specified voltage;
- a gate circuit for prohibiting the input of the switching command signal to the drive circuit based on the input of the stop signal.
- the failure diagnosis circuit can be configured with an extremely simple circuit configuration.
- the detection circuit includes a voltage having a snubber diode and a snubber capacitor connected in series to both ends of the first semiconductor switch and the second semiconductor switch, and a surge absorber connected in parallel to the snubber capacitor. It may have a clamp-type snubber circuit, and take out the voltage between both ends of the snubber capacitor or the surge absorber as the detection voltage. [0017] Since a snubber circuit for avoiding an overvoltage applied to the first semiconductor switch is used, an overvoltage can be avoided and a short-circuit fault can be detected, thereby providing a high-safety high-voltage pulse generation circuit. be able to.
- the second gate for transmitting the output of the discriminating circuit power to the gate circuit over the operation start time force of the high voltage pulse generation circuit based on the input of the operation command signal and the operation stop time.
- a circuit may be provided.
- the discrimination circuit has an adjustment circuit for forcibly outputting the drive signal for a predetermined time from the start of operation of the high-voltage pulse generation circuit based on the input of the operation command signal.
- the drive signal is forcibly output from the discrimination circuit for a predetermined time from the start of operation, for example, the time until the normal high-voltage pulse generation circuit operates normally. Erroneous determination can be avoided.
- the first semiconductor switch may be an electrostatic induction thyristor! Further, the second semiconductor switch may be a metal oxide semiconductor field effect transistor for power.
- a short-circuit failure of the first semiconductor switch can be detected at an early stage, and a failure of another component circuit or another component can be detected. Can be avoided.
- FIG. 1 is a circuit diagram showing a configuration of a high-voltage pulse generating circuit according to the present embodiment.
- FIGS. 2A to 2D are diagrams illustrating operation waveforms of voltages and currents of respective parts of the high-voltage pulse generation circuit according to the present embodiment.
- FIG. 3 is a block diagram showing a failure diagnosis circuit of the high-voltage pulse generation circuit according to the present embodiment.
- FIG. 4 is a circuit diagram showing a configuration of a high-voltage pulse generating circuit according to an embodiment.
- FIG. 5 is a waveform diagram showing a normal operation of the high-voltage pulse generating circuit according to the embodiment.
- FIG. 6 is a waveform diagram showing an abnormal operation of the high-voltage pulse generation circuit according to the embodiment.
- FIG. 7 is a circuit diagram showing a high-voltage pulse generation circuit according to a conventional example.
- the high-voltage pulse generation circuit 10 has a circuit body 12 and a failure diagnosis circuit 14.
- the failure diagnosis circuit 14 will be described later in detail.
- the circuit body 12 includes inductors 30 connected in series to both ends 26 and 28 of a DC power supply 24 having a DC power supply 20 and a capacitor 22 for reducing high-frequency impedance. It has a first semiconductor switch 32 and a second semiconductor switch 34.
- the inductor 30 has a transformer 40 having a primary winding 36 and a secondary winding 38, and a high voltage pulse Po is output from both ends 42 and 44 (output terminals) of the secondary winding 38 of the transformer 40. It is designed to be taken out. As shown by broken lines, for example, a discharge gap 46 is connected to the output terminals 42 and 44 of the secondary winding 38, or a resistance load (not shown) is connected. The anode terminal of the first semiconductor switch 32 is connected to one end 48 of the inductor 30 (one end of the primary winding 36).
- two diodes 54 a and 54 b connected in parallel between the gate terminal 50 of the first semiconductor switch 32 and the other end 52 of the inductor 30 are connected!
- the two diodes 54a and 54b have their respective anode terminals connected to the gate terminal 50 of the first semiconductor switch 32 through a common contact, and have the other end 52 of each of the force source terminals 30 (the primary winding 36). Connected to the other end).
- the second semiconductor switch 34 is provided on the negative terminal 28 side of the DC power supply unit 24 in the example of FIG. 1, it goes without saying that the same effect can be obtained by providing the second semiconductor switch 34 on the positive terminal 26 side. Nor. The output is also taken from both ends of the first semiconductor switch 32, not from the inductor 30. It may be issued.
- the second semiconductor switch 34 is a power capable of using a self-arc-extinguishing type or a commutation-extinguishing type device.
- a power metal oxide in which an avalanche diode 56 is built in anti-parallel is used.
- a dangling semiconductor field effect transistor is used.
- the switching pulse signal Vs from the gate drive circuit 58 is supplied between the gate terminal and the source terminal of the second semiconductor switch 34.
- various amplifiers and inverters for amplifying an input signal can be used as the gate drive circuit 58.
- the first semiconductor switch 32 is a force capable of using a current control type device or a self-extinguishing type or commutation-extinguishing type device.
- the voltage rise rate at turn-off (dvZdt ) and use an SI thyristor with a very high voltage rating.
- a diode 60 is connected in parallel to the first semiconductor switch 32.
- the diode 60 has an anode terminal connected to the force source terminal of the first semiconductor switch 32, a force source terminal connected to the anode terminal of the first semiconductor switch 32, and an anti-parallel connection to the first semiconductor switch 32. Connected! RU
- circuit operation of the circuit body 12 will be described with reference to the circuit diagram of FIG. 1 and the waveform diagrams of FIGS. 2A to 2D.
- the switching pulse signal Vs supplied between the gate and the source of the second semiconductor switch 34 goes high (see FIG. 2D), so that the second semiconductor switch 34 Turn on.
- the first semiconductor switch 32 is turned on by the electric field effect applied between the gate and the force source due to the extremely large impedance having the opposite polarity of the diodes 54a and 54b. Since the rise of the anode current of the first semiconductor switch 32 is suppressed by the inductor 30, a normal turn-on can be performed only by the electric field effect.
- Ton the waveform of the current 12 flowing through the secondary winding 38 also has a waveform according to the negative polarity pulse Pn (see FIG. 2B).
- the switching pulse signal Vs becomes low at time tl, whereby the second semiconductor switch 34 is turned off.
- the current from the force source of the first semiconductor switch 32 is also zero, that is, it is in an open state, so that the current II flowing through the primary winding 36 is cut off,
- the diodes 54a and 54b act on the primary winding 36 to generate a back electromotive force by the residual electromagnetic energy.
- the current II of the primary winding 36 is applied to the anode terminal of the first semiconductor switch 32.
- the generation of the high voltage pulse Po to the output terminals 42 and 44 starts, and the output voltage Vo rises sharply due to the induced electromotive force generated in the transformer 40 (see FIG. 2C).
- the high-voltage panless Po becomes a peak.
- n is the turns ratio of the transformer 40
- L is the primary inductance of the transformer 40
- L is the cutoff speed of the current II flowing through the primary winding 36 of the transformer 40.
- the voltage is higher than the withstand voltage V between the anode and the force. Also, the first semiconductor switch
- the high-voltage pulse generation circuit 10 As described above, in the high-voltage pulse generation circuit 10 according to the present embodiment, it is possible to supply the high-voltage pulse Po having a steep rise time and an extremely narrow pulse width with a simple circuit configuration. it can.
- the high-voltage pulse generation circuit 10 has a failure diagnosis circuit 14 in addition to the circuit main body 12.
- the failure diagnosis circuit 14 has a function of stopping the driving of the second semiconductor switch 34 when the voltage between both ends of the first semiconductor switch 32 and the second semiconductor switch 34 is out of the normal range. That is, when the voltage between both ends is out of the normal range, the input of the switching pulse signal Vs to the gate drive circuit 58 is prohibited.
- the failure diagnosis circuit 14 has a detection circuit 70, a determination circuit 72, a first gate circuit 74, and a second gate circuit 76.
- the gate drive circuit amplifies the input switching pulse signal Ps to a predetermined gain and supplies it as a switching pulse signal Vs between the gate and the source of the second semiconductor switch 34.
- the detection circuit 70 detects the voltage Va across the first semiconductor switch 32 and the second semiconductor switch 34, and outputs it as a detection voltage Vb.
- the determination circuit 72 compares the detection voltage Vb from the detection circuit 70 with a predetermined voltage Vc.If the detection voltage Vb is higher than the predetermined voltage Vc, the determination circuit 72 outputs a drive signal Sd. Stop signal when is less than the specified voltage Vc A comparison circuit 78 that outputs Sn is provided.
- the first gate circuit 74 inhibits the input of the switching command signal Ps to the gate drive circuit 58 based on the input of the stop signal Sn from the determination circuit 72.
- the second gate circuit 76 is connected between the discriminating circuit 72 and the first gate circuit 74, and determines whether the power at the start of operation of the high-voltage pulse generating circuit 10 based on the input of the operation command signal Pc also reaches the point at which the operation is stopped.
- the output from 72 is transmitted to the first gate circuit 74.
- the operation command signal Pc is a signal for instructing the operation Z stop of the high-voltage pulse generation circuit 10, and is supplied with, for example, a control computer.
- the discrimination circuit 72 also forcibly drives the power at the start of operation of the high-voltage pulse generation circuit 10 based on the input of the operation command signal Pc over a predetermined time td. It has an adjustment circuit 80 that outputs the signal Sd.
- the predetermined time td is, for example, a time until the normal high-voltage pulse generation circuit 10 also normally operates at the operation start time.
- the adjustment circuit 80 forcibly outputs a drive signal Sd for a predetermined time td.
- the first gate circuit 74 is supplied through the second gate circuit 76.
- the first gate circuit 74 outputs the supplied switching command signal Ps to the gate drive circuit 58 based on the input of the drive signal Sd from the second gate circuit 76.
- the gate drive circuit 58 amplifies the supplied switching noise signal Ps to a predetermined gain and supplies it as a switching pulse signal Vs between the gate and source of the second semiconductor switch 34. As a result, the circuit body 12 operates.
- the determination circuit 72 outputs a stop signal Sn.
- the first gate circuit 74 inhibits the output of the supplied switching command signal Ps to the gate drive circuit 58 based on the input of the stop signal Sn. As a result, the operation of the circuit body 12 is stopped.
- the first semiconductor switch 32 does not cause a failure of another component circuit due to the short-circuit failure, and it is possible to prevent the first semiconductor switch 32 from spreading to other components.
- the present invention when the detection voltage Vb from the detection circuit 70 becomes equal to or lower than the specified voltage Vc, the input of the switching command signal Ps to the gate drive circuit 58 is prohibited. In a state where the high-voltage pulse Po having a very narrow pulse period and a short pulse width is output, the present invention can be effectively applied even when the first semiconductor switch 32 is short-circuited.
- the adjustment circuit 80 is incorporated in the determination circuit 72.
- the high-voltage pulse generation circuit 100 includes a snubber as a detection circuit 70 connected in parallel to the first semiconductor switch 32 and the second semiconductor switch 34. It has a circuit 102 and an overvoltage detection circuit 104 connected in parallel to the snapper circuit 102.
- a comparator 106 serving as a comparison circuit 78 of the determination circuit 72 is connected to a stage subsequent to the overvoltage detection circuit 104.
- the adjusting circuit 80 of the discriminating circuit 72 includes a capacitor 108, a NAN
- the snubber circuit 102 includes a series circuit of a snubber diode 120 and a capacitor 122 connected in parallel to the first semiconductor switch 32 and the second semiconductor switch 34, and a capacitor 122 of the series circuit.
- This is a voltage clamp type snubber circuit having a surge absorber 124 connected in parallel.
- the snubber diode 120 has an anode connected to the anode terminal of the first semiconductor switch 32, and a power source connected to the capacitor 122.
- a resistor may be connected instead of the snubber diode 120.
- a surge absorber 124 connected in parallel to the capacitor 122 refers to an element capable of suppressing overvoltage such as a semiconductor-type surge absorber varistor such as a Zener diode and an arrester.
- the overvoltage detection circuit 104 has a series circuit of two resistors (first and second resistors 126 and 128) connected in parallel to the surge absorber 124.
- the second resistor A low noise filter may be configured by connecting the capacitor 130 in parallel with the anti-128, thereby providing a circuit configuration resistant to noise.
- the connection of the capacitor 130 can function as a latch circuit for holding the voltage between both ends of the second resistor 128 for a certain period of time.
- a protection circuit 132 having a Zener diode or the like may be connected between the second resistor 128 and the capacitor 130.
- the capacitor 130 is connected in parallel to the second resistor 128.
- the capacitor 130 need not be connected.
- the output voltage Vb of the capacitor 130 is input to the + terminal, and the specified voltage Vc is input to one terminal, and the output voltage Vb of the capacitor 130 is higher than the specified voltage Vc.
- a high-level signal (drive signal Sd) is output, and a low-level signal (stop signal Sn) is output when the output voltage Vb of the capacitor 130 is equal to or lower than the specified voltage Vc.
- the specified voltage Vc is set such that the output voltage Vb of the capacitor 130 when the voltage Va across the capacitor 122 in the snubber circuit 102 is at the failure detection level Vd (see FIG. 5) is defined as the specified voltage Vc.
- the failure detection level Vd for example, the maximum voltage Vth of the capacitor 122, for example, the voltage level of 1Z2, and the like are given.
- the capacitor 108 of the adjustment circuit 80 is connected between the input terminal 134 to which the operation instruction signal Pc is supplied and GND (ground).
- the operation instruction signal Pc from the input terminal 134 is supplied to one input of the NAND circuit 110, and a parallel circuit of a resistor 136 and a diode 138 is inserted between the input terminal 134 and the other input of the NAND circuit 110. It is connected.
- the diode 138 has an anode connected to the other input of the NAND circuit 110 and a power source connected to the input terminal 134.
- One input of the AND circuit 112 is supplied with the operation instruction signal Pc from the input terminal 134, and the other input is supplied with the output of the NAND circuit 110.
- the output of the comparator 106 is supplied to one input of the OR circuit 114, and the output of the AND circuit 112 is supplied to the other input.
- the operation instruction signal Pc becomes low (operation stop) the output of the NAND circuit 110 becomes high again. A low level signal is output from the AND circuit 112. Become virtually irrelevant.
- the AND circuit 116 as the second gate circuit 76 is configured such that the output of the OR circuit 114 is supplied to one input, and the operation instruction signal Pc from the input terminal 134 is supplied to the other input. I have.
- the AND circuit 118 as the first gate circuit 74 is configured such that the output of the AND circuit 116 is supplied to one input, and the switching command signal Pc is supplied to the other input.
- the output of the AND circuit 118 is supplied between a gate and a source of the second semiconductor switch 34 via a gate drive circuit 58 constituted by an inverter 140 and a resistor 142, for example.
- the output level La of the NAND circuit 110 and the output level Lb of the AND circuit 112 also become high. Accordingly, the output level Ld of the OR circuit 114 and the output level Le of the AND circuit 116 also become high.
- the output level Lf of the AND circuit 118 changes in synchronization with the switching command signal Ps. That is, this is equivalent to the output of the switching command signal Ps from the AND circuit 118, and the switching command signal Ps is supplied to the second semiconductor switch 34 as the switching norse signal Vs via the inverter 140 and the resistor 142. Supplied.
- time t21 to time t23 is the same as the above-described normal operation (see FIG. 5) from time tl1 to tl3.
- the short-circuited fault is detected early and the operation of the circuit body 12 is started. Can be stopped.
- the snubber circuit 102 for avoiding the overvoltage applied to the first semiconductor switch 32 is used as the detection circuit 70, the overvoltage is avoided and the short-circuit fault is detected.
- the high-voltage pulse generation circuit 100 with high safety can be provided.
- the high-voltage pulse generating circuit according to the present invention is not limited to the above-described embodiment, but may adopt various configurations without departing from the gist of the present invention.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Generation Of Surge Voltage And Current (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/579,539 US7548402B2 (en) | 2004-05-14 | 2005-05-13 | High voltage pulse generating circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-145197 | 2004-05-14 | ||
JP2004145197A JP4585792B2 (ja) | 2004-05-14 | 2004-05-14 | 高電圧パルス発生回路 |
Publications (1)
Publication Number | Publication Date |
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WO2005112246A1 true WO2005112246A1 (ja) | 2005-11-24 |
Family
ID=35394479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/008793 WO2005112246A1 (ja) | 2004-05-14 | 2005-05-13 | 高電圧パルス発生回路 |
Country Status (3)
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US (1) | US7548402B2 (ja) |
JP (1) | JP4585792B2 (ja) |
WO (1) | WO2005112246A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106612065A (zh) * | 2015-10-17 | 2017-05-03 | 英特希尔美国公司 | 电压调整器中的增强的故障报告 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007258591A (ja) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | 電流抑制層付き静電誘導サイリスタ、電流抑制層付き静電誘導サイリスタの保護回路及びパルス発生回路 |
JP4949710B2 (ja) * | 2006-03-24 | 2012-06-13 | 日本碍子株式会社 | パルス発生方法 |
DE102012207689A1 (de) * | 2012-05-09 | 2013-11-14 | Infineon Technologies Ag | Steuereinheit für eine elektrische Maschine und Verfahren |
CN104981961B (zh) * | 2013-02-20 | 2018-05-22 | 松下知识产权经营株式会社 | 非接触充电装置以及非接触充电方法 |
JP6602573B2 (ja) * | 2015-06-30 | 2019-11-06 | ダイハツ工業株式会社 | プラズマリアクタ用電源装置 |
CN113632360A (zh) * | 2019-03-20 | 2021-11-09 | 松下知识产权经营株式会社 | 电力转换系统、以及电力转换电路的诊断方法和程序 |
Citations (5)
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JPH05276739A (ja) * | 1992-03-24 | 1993-10-22 | Fujitsu Denso Ltd | シリーズレギュレータの保護回路 |
JPH10215587A (ja) * | 1997-01-28 | 1998-08-11 | Nec Corp | 圧電トランスの駆動回路 |
JPH10295078A (ja) * | 1997-04-17 | 1998-11-04 | Fuji Elelctrochem Co Ltd | スイッチング電源 |
JP2002112452A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 電力変換装置 |
JP2004072994A (ja) * | 2002-06-12 | 2004-03-04 | Ngk Insulators Ltd | 高電圧パルス発生回路 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6841124B2 (en) * | 2000-10-02 | 2005-01-11 | Ethicon, Inc. | Sterilization system with a plasma generator controlled by a digital signal processor |
-
2004
- 2004-05-14 JP JP2004145197A patent/JP4585792B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-13 WO PCT/JP2005/008793 patent/WO2005112246A1/ja active Application Filing
- 2005-05-13 US US11/579,539 patent/US7548402B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05276739A (ja) * | 1992-03-24 | 1993-10-22 | Fujitsu Denso Ltd | シリーズレギュレータの保護回路 |
JPH10215587A (ja) * | 1997-01-28 | 1998-08-11 | Nec Corp | 圧電トランスの駆動回路 |
JPH10295078A (ja) * | 1997-04-17 | 1998-11-04 | Fuji Elelctrochem Co Ltd | スイッチング電源 |
JP2002112452A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 電力変換装置 |
JP2004072994A (ja) * | 2002-06-12 | 2004-03-04 | Ngk Insulators Ltd | 高電圧パルス発生回路 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106612065A (zh) * | 2015-10-17 | 2017-05-03 | 英特希尔美国公司 | 电压调整器中的增强的故障报告 |
CN106612065B (zh) * | 2015-10-17 | 2020-06-12 | 英特希尔美国公司 | 电压调整器中的增强的故障报告 |
Also Published As
Publication number | Publication date |
---|---|
US20070241619A1 (en) | 2007-10-18 |
JP4585792B2 (ja) | 2010-11-24 |
US7548402B2 (en) | 2009-06-16 |
JP2005328653A (ja) | 2005-11-24 |
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