WO2005079293A3 - Dispositifs de production energetique integree a nitrure iii - Google Patents

Dispositifs de production energetique integree a nitrure iii Download PDF

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Publication number
WO2005079293A3
WO2005079293A3 PCT/US2005/004388 US2005004388W WO2005079293A3 WO 2005079293 A3 WO2005079293 A3 WO 2005079293A3 US 2005004388 W US2005004388 W US 2005004388W WO 2005079293 A3 WO2005079293 A3 WO 2005079293A3
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WO
WIPO (PCT)
Prior art keywords
power devices
nitride power
iii
integrated iii
integrated
Prior art date
Application number
PCT/US2005/004388
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English (en)
Other versions
WO2005079293A2 (fr
Inventor
Daniel M Kinzer
Robert Beach
Original Assignee
Int Rectifier Corp
Daniel M Kinzer
Robert Beach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp, Daniel M Kinzer, Robert Beach filed Critical Int Rectifier Corp
Priority to DE112005000352T priority Critical patent/DE112005000352T5/de
Priority to JP2006553268A priority patent/JP2007522677A/ja
Publication of WO2005079293A2 publication Critical patent/WO2005079293A2/fr
Publication of WO2005079293A3 publication Critical patent/WO2005079293A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur intégré à base de nitrure III comprenant au moins deux dispositifs semi-conducteurs à base de nitrure III formés sur un dé commun.
PCT/US2005/004388 2004-02-12 2005-02-14 Dispositifs de production energetique integree a nitrure iii WO2005079293A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112005000352T DE112005000352T5 (de) 2004-02-12 2005-02-14 Integrierte III-Nitrid-Leistungsanordnungen
JP2006553268A JP2007522677A (ja) 2004-02-12 2005-02-14 集積型ｉｉｉ族−窒化物電力デバイス

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54462604P 2004-02-12 2004-02-12
US60/544,626 2004-02-12
US11/056,794 2005-02-11
US11/056,794 US7550781B2 (en) 2004-02-12 2005-02-11 Integrated III-nitride power devices

Publications (2)

Publication Number Publication Date
WO2005079293A2 WO2005079293A2 (fr) 2005-09-01
WO2005079293A3 true WO2005079293A3 (fr) 2006-04-06

Family

ID=34889856

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/004388 WO2005079293A2 (fr) 2004-02-12 2005-02-14 Dispositifs de production energetique integree a nitrure iii

Country Status (5)

Country Link
US (1) US7550781B2 (fr)
JP (1) JP2007522677A (fr)
KR (1) KR100868103B1 (fr)
DE (1) DE112005000352T5 (fr)
WO (1) WO2005079293A2 (fr)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7863877B2 (en) * 2006-12-11 2011-01-04 International Rectifier Corporation Monolithically integrated III-nitride power converter
JP2008153748A (ja) * 2006-12-14 2008-07-03 Matsushita Electric Ind Co Ltd 双方向スイッチ及び双方向スイッチの駆動方法
US8525224B2 (en) * 2007-03-29 2013-09-03 International Rectifier Corporation III-nitride power semiconductor device
WO2008155085A1 (fr) * 2007-06-18 2008-12-24 Microgan Gmbh Circuit électrique à mise en contact verticale
WO2008155083A1 (fr) * 2007-06-18 2008-12-24 Microgan Gmbh Composant semiconducteur à contacts imbriqués
JPWO2009001529A1 (ja) * 2007-06-22 2010-08-26 パナソニック株式会社 プラズマディスプレイパネル駆動装置及びプラズマディスプレイ
US7875907B2 (en) * 2007-09-12 2011-01-25 Transphorm Inc. III-nitride bidirectional switches
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8680579B2 (en) * 2007-09-20 2014-03-25 International Rectifier Corporation Individually controlled multiple III-nitride half bridges
US8659275B2 (en) * 2008-01-11 2014-02-25 International Rectifier Corporation Highly efficient III-nitride power conversion circuit
US8063616B2 (en) * 2008-01-11 2011-11-22 International Rectifier Corporation Integrated III-nitride power converter circuit
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
JP5338433B2 (ja) * 2008-09-30 2013-11-13 富士電機株式会社 窒化ガリウム半導体装置およびその製造方法
JP5608322B2 (ja) * 2008-10-21 2014-10-15 パナソニック株式会社 双方向スイッチ
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US9502973B2 (en) * 2009-04-08 2016-11-22 Infineon Technologies Americas Corp. Buck converter with III-nitride switch for substantially increased input-to-output voltage ratio
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5530682B2 (ja) * 2009-09-03 2014-06-25 パナソニック株式会社 窒化物半導体装置
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
US8624662B2 (en) * 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
JP2011165749A (ja) * 2010-02-05 2011-08-25 Panasonic Corp 半導体装置
JP5895170B2 (ja) 2010-02-23 2016-03-30 パナソニックＩｐマネジメント株式会社 ２線式交流スイッチ
US9219058B2 (en) * 2010-03-01 2015-12-22 Infineon Technologies Americas Corp. Efficient high voltage switching circuits and monolithic integration of same
US8981380B2 (en) * 2010-03-01 2015-03-17 International Rectifier Corporation Monolithic integration of silicon and group III-V devices
JP5789967B2 (ja) * 2010-12-03 2015-10-07 富士通株式会社 半導体装置及びその製造方法、電源装置
US9263439B2 (en) * 2010-05-24 2016-02-16 Infineon Technologies Americas Corp. III-nitride switching device with an emulated diode
JP2012084743A (ja) 2010-10-13 2012-04-26 Fujitsu Semiconductor Ltd 半導体装置及び電源装置
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
CN103582939B (zh) 2011-06-24 2016-03-09 松下知识产权经营株式会社 氮化物半导体装置
JP5919521B2 (ja) 2011-07-12 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体装置
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
US9093366B2 (en) 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
KR101946008B1 (ko) * 2012-07-17 2019-02-08 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
WO2014035794A1 (fr) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Dispositif latéral à semi-conducteur à région verticale de claquage
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US20140070627A1 (en) * 2012-09-07 2014-03-13 International Rectifier Corporation Integrated Group III-V Power Stage
WO2014048504A1 (fr) * 2012-09-28 2014-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composant à semi-conducteur doté d'au moins une structure de contact servant à amener et/ou évacuer des porteurs de charge
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
KR102083495B1 (ko) 2013-01-07 2020-03-02 삼성전자 주식회사 Ｃｍｏｓ 소자와 이를 포함하는 광학장치와 그 제조방법
US9041067B2 (en) * 2013-02-11 2015-05-26 International Rectifier Corporation Integrated half-bridge circuit with low side and high side composite switches
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
KR102034712B1 (ko) * 2013-03-12 2019-10-21 엘지이노텍 주식회사 전력 반도체 소자 및 패키지
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
JP6277429B2 (ja) * 2013-05-20 2018-02-14 パナソニックＩｐマネジメント株式会社 半導体装置
WO2015006111A1 (fr) 2013-07-09 2015-01-15 Transphorm Inc. Onduleurs multiniveaux et leurs composants
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads
US10236236B2 (en) 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
TWI577022B (zh) 2014-02-27 2017-04-01 台達電子工業股份有限公司 半導體裝置與應用其之半導體裝置封裝體
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
WO2016017068A1 (fr) 2014-07-30 2016-02-04 パナソニックＩｐマネジメント株式会社 Dispositif semi-conducteur
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10200030B2 (en) 2015-03-13 2019-02-05 Transphorm Inc. Paralleling of switching devices for high power circuits
US20160293597A1 (en) 2015-04-06 2016-10-06 Infineon Technologies Austria Ag Integrated Semiconductor Device
TWI584467B (zh) 2015-09-24 2017-05-21 台達電子工業股份有限公司 半導體裝置
JP6888013B2 (ja) 2016-01-15 2021-06-16 トランスフォーム テクノロジー，インコーポレーテッド ＡＬ（１−ｘ）Ｓｉ（ｘ）Ｏゲート絶縁体を有するエンハンスメントモードＩＩＩ族窒化物デバイス
US9722065B1 (en) 2016-02-03 2017-08-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
DE102016205079B4 (de) * 2016-03-29 2021-07-01 Robert Bosch Gmbh High-electron-mobility Transistor
WO2017210323A1 (fr) 2016-05-31 2017-12-07 Transphorm Inc. Dispositifs au nitrure du groupe iii comprenant une couche d'appauvrissement à gradient
US10741644B2 (en) * 2016-11-22 2020-08-11 Delta Electronics, Inc. Semiconductor devices with via structure and package structures comprising the same
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
US10601300B2 (en) 2017-05-19 2020-03-24 Efficient Power Conversion Corporation Integrated gallium nitride based DC-DC converter
DE102017210165A1 (de) * 2017-06-19 2018-12-20 Robert Bosch Gmbh Mehrfach-Transistor-Anordnung, Brückengleichrichter und Verfahren zur Herstellung einer Mehrfach-Transistor-Anordnung
US10637411B2 (en) * 2017-10-06 2020-04-28 Qualcomm Incorporated Transistor layout for improved harmonic performance
US12074093B2 (en) * 2019-08-30 2024-08-27 Panasonic Intellectual Property Management Co., Ltd. Integrated semiconductor device
CN115117055B (zh) * 2021-05-25 2023-12-05 英诺赛科(苏州)科技有限公司 氮化物基半导体双向切换器件和其制造方法
US20240128368A1 (en) * 2022-10-13 2024-04-18 Microwave Technology Inc. RF Power Transistor Having Off-Axis Layout

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387880A (en) * 1993-10-20 1995-02-07 Trw Inc. Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias
US20020041003A1 (en) * 2000-09-21 2002-04-11 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
US20020171405A1 (en) * 2000-02-08 2002-11-21 Yuichi Watanabe Apparatus and circuit for power supply, and apparatus for controlling large current load Apparatus and circuit for power supply,and apparatus for controlling large current load

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033037B1 (fr) 1979-12-28 1990-03-21 Fujitsu Limited Dispositifs semiconducteurs à hétérojonction
US4511813A (en) 1981-06-12 1985-04-16 Harris Corporation Dual-gate MESFET combiner/divider for use in adaptive system applications
JPH08250520A (ja) 1995-03-14 1996-09-27 Mitsubishi Electric Corp 電界効果型半導体装置
JP3439290B2 (ja) * 1995-12-28 2003-08-25 日本電気株式会社 半導体装置
JP3478005B2 (ja) * 1996-06-10 2003-12-10 ソニー株式会社 窒化物系化合物半導体のエッチング方法および半導体装置の製造方法
JP2000277724A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
JP2001223341A (ja) * 2000-02-08 2001-08-17 Furukawa Electric Co Ltd:The 電源装置
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
US6690042B2 (en) 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP4177048B2 (ja) * 2001-11-27 2008-11-05 古河電気工業株式会社 電力変換装置及びそれに用いるＧａＮ系半導体装置
JP2003228320A (ja) 2002-02-05 2003-08-15 Matsushita Electric Ind Co Ltd プラズマディスプレイ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387880A (en) * 1993-10-20 1995-02-07 Trw Inc. Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias
US20020171405A1 (en) * 2000-02-08 2002-11-21 Yuichi Watanabe Apparatus and circuit for power supply, and apparatus for controlling large current load Apparatus and circuit for power supply,and apparatus for controlling large current load
US20020041003A1 (en) * 2000-09-21 2002-04-11 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device

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WO2005079293A2 (fr) 2005-09-01
KR20060110357A (ko) 2006-10-24
US20050189562A1 (en) 2005-09-01
JP2007522677A (ja) 2007-08-09
DE112005000352T5 (de) 2007-03-01
US7550781B2 (en) 2009-06-23
KR100868103B1 (ko) 2008-11-11

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