WO2005079293A3 - Dispositifs de production energetique integree a nitrure iii - Google Patents
Dispositifs de production energetique integree a nitrure iii Download PDFInfo
- Publication number
- WO2005079293A3 WO2005079293A3 PCT/US2005/004388 US2005004388W WO2005079293A3 WO 2005079293 A3 WO2005079293 A3 WO 2005079293A3 US 2005004388 W US2005004388 W US 2005004388W WO 2005079293 A3 WO2005079293 A3 WO 2005079293A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power devices
- nitride power
- iii
- integrated iii
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006553268A JP2007522677A (ja) | 2004-02-12 | 2005-02-14 | 集積型iii族−窒化物電力デバイス |
DE112005000352T DE112005000352T5 (de) | 2004-02-12 | 2005-02-14 | Integrierte III-Nitrid-Leistungsanordnungen |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54462604P | 2004-02-12 | 2004-02-12 | |
US60/544,626 | 2004-02-12 | ||
US11/056,794 US7550781B2 (en) | 2004-02-12 | 2005-02-11 | Integrated III-nitride power devices |
US11/056,794 | 2005-02-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005079293A2 WO2005079293A2 (fr) | 2005-09-01 |
WO2005079293A3 true WO2005079293A3 (fr) | 2006-04-06 |
Family
ID=34889856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/004388 WO2005079293A2 (fr) | 2004-02-12 | 2005-02-14 | Dispositifs de production energetique integree a nitrure iii |
Country Status (5)
Country | Link |
---|---|
US (1) | US7550781B2 (fr) |
JP (1) | JP2007522677A (fr) |
KR (1) | KR100868103B1 (fr) |
DE (1) | DE112005000352T5 (fr) |
WO (1) | WO2005079293A2 (fr) |
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CN115548014B (zh) * | 2021-05-25 | 2023-12-29 | 英诺赛科(苏州)科技有限公司 | 氮化物基双向切换器件和其制造方法 |
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US5387880A (en) * | 1993-10-20 | 1995-02-07 | Trw Inc. | Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias |
US20020041003A1 (en) * | 2000-09-21 | 2002-04-11 | Cambridge Semiconductor Limited | Semiconductor device and method of forming a semiconductor device |
US20020171405A1 (en) * | 2000-02-08 | 2002-11-21 | Yuichi Watanabe | Apparatus and circuit for power supply, and apparatus for controlling large current load Apparatus and circuit for power supply,and apparatus for controlling large current load |
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CA1145482A (fr) * | 1979-12-28 | 1983-04-26 | Takashi Mimura | Dispositif a semiconducteur a heterojonction unique a grande mobilite electronique |
US4511813A (en) * | 1981-06-12 | 1985-04-16 | Harris Corporation | Dual-gate MESFET combiner/divider for use in adaptive system applications |
JPH08250520A (ja) * | 1995-03-14 | 1996-09-27 | Mitsubishi Electric Corp | 電界効果型半導体装置 |
JP3439290B2 (ja) * | 1995-12-28 | 2003-08-25 | 日本電気株式会社 | 半導体装置 |
JP3478005B2 (ja) * | 1996-06-10 | 2003-12-10 | ソニー株式会社 | 窒化物系化合物半導体のエッチング方法および半導体装置の製造方法 |
JP2000277724A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 電界効果トランジスタとそれを備えた半導体装置及びその製造方法 |
JP2001223341A (ja) * | 2000-02-08 | 2001-08-17 | Furukawa Electric Co Ltd:The | 電源装置 |
JP4022708B2 (ja) * | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | 半導体装置 |
JP4186032B2 (ja) * | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
JP4177048B2 (ja) * | 2001-11-27 | 2008-11-05 | 古河電気工業株式会社 | 電力変換装置及びそれに用いるGaN系半導体装置 |
JP2003228320A (ja) | 2002-02-05 | 2003-08-15 | Matsushita Electric Ind Co Ltd | プラズマディスプレイ装置 |
-
2005
- 2005-02-11 US US11/056,794 patent/US7550781B2/en active Active
- 2005-02-14 KR KR1020067016011A patent/KR100868103B1/ko active IP Right Grant
- 2005-02-14 WO PCT/US2005/004388 patent/WO2005079293A2/fr active Application Filing
- 2005-02-14 JP JP2006553268A patent/JP2007522677A/ja active Pending
- 2005-02-14 DE DE112005000352T patent/DE112005000352T5/de not_active Withdrawn
Patent Citations (3)
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US5387880A (en) * | 1993-10-20 | 1995-02-07 | Trw Inc. | Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias |
US20020171405A1 (en) * | 2000-02-08 | 2002-11-21 | Yuichi Watanabe | Apparatus and circuit for power supply, and apparatus for controlling large current load Apparatus and circuit for power supply,and apparatus for controlling large current load |
US20020041003A1 (en) * | 2000-09-21 | 2002-04-11 | Cambridge Semiconductor Limited | Semiconductor device and method of forming a semiconductor device |
Also Published As
Publication number | Publication date |
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US7550781B2 (en) | 2009-06-23 |
KR20060110357A (ko) | 2006-10-24 |
US20050189562A1 (en) | 2005-09-01 |
DE112005000352T5 (de) | 2007-03-01 |
JP2007522677A (ja) | 2007-08-09 |
KR100868103B1 (ko) | 2008-11-11 |
WO2005079293A2 (fr) | 2005-09-01 |
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