WO2005071733A1 - Dispositif a semi-conducteur, convertisseur de puissance le mettant en oeuvre, moteur electrique le mettant en oeuvre, automobile hybride le mettant en oeuvre, et systeme de commande de moteur electrique le mettant en oeuvre - Google Patents

Dispositif a semi-conducteur, convertisseur de puissance le mettant en oeuvre, moteur electrique le mettant en oeuvre, automobile hybride le mettant en oeuvre, et systeme de commande de moteur electrique le mettant en oeuvre Download PDF

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Publication number
WO2005071733A1
WO2005071733A1 PCT/JP2004/000660 JP2004000660W WO2005071733A1 WO 2005071733 A1 WO2005071733 A1 WO 2005071733A1 JP 2004000660 W JP2004000660 W JP 2004000660W WO 2005071733 A1 WO2005071733 A1 WO 2005071733A1
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WO
WIPO (PCT)
Prior art keywords
power
motor
semiconductor device
power semiconductor
semiconductor element
Prior art date
Application number
PCT/JP2004/000660
Other languages
English (en)
Japanese (ja)
Inventor
Shinji Shirakawa
Toshiyuki Innami
Shinichi Fujino
Keita Hashimoto
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP2004/000660 priority Critical patent/WO2005071733A1/fr
Priority to JP2005517178A priority patent/JPWO2005071733A1/ja
Publication of WO2005071733A1 publication Critical patent/WO2005071733A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60K—ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES; ARRANGEMENT OR MOUNTING OF PLURAL DIVERSE PRIME-MOVERS IN VEHICLES; AUXILIARY DRIVES FOR VEHICLES; INSTRUMENTATION OR DASHBOARDS FOR VEHICLES; ARRANGEMENTS IN CONNECTION WITH COOLING, AIR INTAKE, GAS EXHAUST OR FUEL SUPPLY OF PROPULSION UNITS IN VEHICLES
    • B60K6/00—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00
    • B60K6/20—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00 the prime-movers consisting of electric motors and internal combustion engines, e.g. HEVs
    • B60K6/22—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00 the prime-movers consisting of electric motors and internal combustion engines, e.g. HEVs characterised by apparatus, components or means specially adapted for HEVs
    • B60K6/26—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00 the prime-movers consisting of electric motors and internal combustion engines, e.g. HEVs characterised by apparatus, components or means specially adapted for HEVs characterised by the motors or the generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B60K—ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES; ARRANGEMENT OR MOUNTING OF PLURAL DIVERSE PRIME-MOVERS IN VEHICLES; AUXILIARY DRIVES FOR VEHICLES; INSTRUMENTATION OR DASHBOARDS FOR VEHICLES; ARRANGEMENTS IN CONNECTION WITH COOLING, AIR INTAKE, GAS EXHAUST OR FUEL SUPPLY OF PROPULSION UNITS IN VEHICLES
    • B60K6/00—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00
    • B60K6/20—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00 the prime-movers consisting of electric motors and internal combustion engines, e.g. HEVs
    • B60K6/42—Arrangement or mounting of plural diverse prime-movers for mutual or common propulsion, e.g. hybrid propulsion systems comprising electric motors and internal combustion engines ; Control systems therefor, i.e. systems controlling two or more prime movers, or controlling one of these prime movers and any of the transmission, drive or drive units Informative references: mechanical gearings with secondary electric drive F16H3/72; arrangements for handling mechanical energy structurally associated with the dynamo-electric machine H02K7/00; machines comprising structurally interrelated motor and generator parts H02K51/00; dynamo-electric machines not otherwise provided for in H02K see H02K99/00 the prime-movers consisting of electric motors and internal combustion engines, e.g. HEVs characterised by the architecture of the hybrid electric vehicle
    • B60K6/48—Parallel type
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Definitions

  • the present invention relates to a semiconductor device, a power conversion device using the semiconductor device, a motor using the semiconductor device, a hybrid vehicle using the semiconductor device, and a motor drive system using the semiconductor device.
  • semiconductor devices that can perform well even in high-temperature environments such as engine rooms, power converters using them, modules using them, and hybrid automatic writing using them
  • the present invention relates to a vehicle and a motor drive system using the same.
  • a power converter that supplies AC power to an electric motor is required for a vehicle that uses driving power extracted from the engine and electric motor, such as a hybrid electric vehicle, and that uses power in combination. .
  • the engine is stopped when the vehicle is stopped, such as waiting for a signal.
  • an idle stop system that facilitates mounting on a wide variety of vehicles at low cost is necessary.
  • semiconductor devices built in the evening are: 1) downsizing for incorporation into the motor, and 2) the high temperature of the semiconductor device due to the fact that the motor is located near the engine that is a high heating element. Two points are improvement of long-term reliability for the environment.
  • the one described in Japanese Patent Application Laid-Open No. 2000-183249 does not assume a high-temperature environment near the engine. 1) The temperature of the power semiconductor element rises to near the curing temperature of the conductive resin material. Therefore, curing progresses and the joint becomes weak against stress. 2) Since the environment is high, it is necessary to reduce the heat generation and suppress the temperature of the power semiconductor element.
  • the electrical resistance value of the conductive resin material is large.
  • the volume resistivity of lead tin solder used as a bonding material is about 15 ⁇ ⁇ cm, whereas the volume resistivity of conductive resin material is 1 ⁇ ⁇ cm (from JP 2000-1832 49).
  • the resistance of conductive grease is about 70,000 times that of lead-tin solder.
  • the bus bar wiring expands at a higher temperature than the low thermal expansion material and shrinks at a low temperature due to the difference in the linear expansion coefficient. This phenomenon is conspicuous in a high temperature environment.
  • the bus bar wiring is deformed into a bow shape, and the force in the direction of peeling the bus bar wiring from the semiconductor device is idle stop. It occurs repeatedly depending on the cycle of driving and stopping the car. For this reason, peeling is more likely to occur at the joint.
  • the surface electrode connected to the insulating substrate is on the positive electrode side, and the other surface is the electrode on the negative electrode side.
  • the electrode of the power semiconductor element is referred to as the electrode of MO SFET (Metal Oxide Semiconductor Field Effect Transistor), and the positive electrode side is referred to as the drain electrode and the negative electrode side is referred to as the source electrode.
  • MO SFET Metal Oxide Semiconductor Field Effect Transistor
  • An object of the present invention is to provide a case where a semiconductor device is located in a high-temperature environment near the engine, as in the case where a semiconductor device is built in a generator motor (alternative evening) and a power supply function is added. In other words, it is to provide a semiconductor device capable of improving long-term reliability against a high temperature environment.
  • Another object of the present invention is to provide a power conversion device incorporating a semiconductor device with improved long-term reliability against high temperature environments.
  • Another object of the present invention is to provide a generator motor that incorporates a semiconductor device with improved long-term reliability in a high temperature environment and enables a cascade operation.
  • Still another object of the present invention is to provide a hybrid vehicle that incorporates a semiconductor device with improved long-term reliability against high temperature environments and is capable of idle stop operation.
  • the present invention provides a power semiconductor element having upper and lower electrodes for input / output of a main current, an insulating substrate supporting the one lower electrode, A semiconductor device comprising a laminated conductor plate joined to the other upper surface electrode, wherein the laminated conductor plate has a linear expansion coefficient in the range of 8 to 12 ppm / ⁇ C and is made of solder, gold or silver.
  • One of the nanoparticles is used to join the top electrode.
  • the present invention provides a power semiconductor element having upper and lower electrodes for input and output of a main current, an insulating substrate that supports the one lower electrode, A semiconductor device comprising a laminated conductor plate joined to the other upper surface electrode, wherein the laminated conductor plate is a copper plate, iron-nickel so that the ratio of the respective plate thicknesses is 1: (1-2): 1 It consists of an alloy plate and a copper plate.
  • the present invention provides a power module having power semiconductor elements in upper and lower arms that use upper and lower electrodes for main current input and output, and the power module.
  • a power conversion device including a control unit for controlling driving of the semiconductor element, using a conductor plate having a linear expansion coefficient in the range of 8 to 12 pp mZ ° C, and the upper electrode of the semiconductor element
  • the conductor plates are joined using solder or any material of gold or silver.
  • the present invention provides a motor comprising a stator and a rotor, wherein the power semiconductor element uses two upper and lower electrodes for input and output of a main current.
  • the upper arm and lower arm equipped with a power conversion device that converts power from the battery and supplies power to the motor, using a conductor plate with a linear expansion coefficient in the range of 8 to 12 ppm /
  • the power semiconductor element of the semiconductor device in which the upper surface electrode of the power semiconductor element and the conductor plate are joined using solder or any material of gold or silver and the heat radiating plate are electrically connected, and the heat radiating plate is electrically connected to the bracket. Fixed mechanically and mechanically.
  • the present invention is a hybrid vehicle in which wheels are driven by an engine and a motor, and uses a power having two upper and lower electrodes for main current input and output.
  • a semiconductor device is provided in the upper arm and the lower arm, provided with a power conversion device that converts power from the battery and supplies power to the motor, each having a thickness of 1: (1-2): 1
  • the motor is mounted in an engine room with the heat sink fixed electrically and mechanically to a bracket.
  • FIG. 1 is a block diagram showing a configuration of a hybrid vehicle having an idle stop function for restarting an engine with a motor incorporating a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is a block diagram showing the configuration of a motor incorporating a semiconductor device according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing the configuration of a motor incorporating a semiconductor device according to an embodiment of the present invention.
  • FIG. 4 shows a motor semiconductor device incorporating a semiconductor device according to an embodiment of the present invention. It is a perspective view which shows the structure of a certain power converter device.
  • FIG. 5 is a cross-sectional view showing a configuration of a power conversion device that is a semiconductor device according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a configuration of a power conversion device which is a semiconductor device according to another embodiment of the present invention.
  • FIG. 1 is a block diagram showing a configuration of a hybrid vehicle having an idle stop function for restarting an engine in a motor vehicle incorporating a semiconductor device according to an embodiment of the present invention.
  • the control device 51 stops the engine 53. After that, when the control device 51 detects an operation that shifts to starting, such as when the driver removes his foot from the brake pedal, or a state where power generation is required such as a battery voltage drop, the control device 51 drives the motor 60 built in the semiconductor device. The power is transmitted to engine 53 by belt B, and engine 53 is restarted.
  • the power source of the semiconductor device built-in module 60 is a DC power source 31 such as a battery.
  • the semiconductor device built-in motor 60 also has a function of a power generation motor that generates electric power by rotating the engine during traveling and charges the electric power to the DC power source 31.
  • the motor 60 with the built-in semiconductor device can be used for conventional power generation, regardless of whether the rotating shafts of the engine 53 and motor 60 are directly connected or belt driven. It is necessary to place it near the engine 53 where the motor (alternate overnight) was placed. That is, the semiconductor device built-in motor 60 is placed in a high-temperature environment, but the semiconductor device built-in motor 60 has a structure that improves the reliability against the high-temperature environment, as will be described later. Semiconductor built-in motor 60 It is possible to replace the generator motor mounted in the high-temperature environment near the engine in terms of size and reliability by integrating functions such as providing the heat radiation function in addition to the heat dissipation function to the heat sink of the body device.
  • the semiconductor built-in motor 60 can be applied to an already designed vehicle. Therefore, according to this embodiment, an idle stop system can be easily realized at low cost.
  • an automobile such as an alternator that has a power operation function, used as a motor, and restarts the engine is generally called a mild hybrid car.
  • FIG. 2 is a block diagram showing the configuration of a motor incorporating a semiconductor device according to an embodiment of the present invention.
  • the semiconductor device built-in motor 60 includes an AC motor (motor / generator) 61 and a motor control device 63.
  • the AC motor 61 includes magnetic pole position detection means 61 MD for detecting the rotational position of the mouth.
  • the motor control device 3 includes a power conversion device 6 3 P, a motor controller 6 3, and an excitation drive circuit 6 3 ED.
  • the power converter 6 3 P is configured as a three-phase bridge circuit including a switching element (UP to ⁇ ) and a rectifying element connected in antiparallel to each switching element.
  • a field effect transistor M0SFET
  • I G B T can also be used as a switching element.
  • the AC motor 61 has a step and a low and is configured as a wound field type three-phase AC motor.
  • An excitation coil 6 1 RC is installed in the low drive connected to the power transmission means 2, and an U-phase, V-phase, and W-phase armature coil 6 1 SC is installed in the steering. .
  • the exciting coil 6 1 RC at the mouth of the AC motor 6 1 is fed by the excitation drive circuit 6 3 ED.
  • the voltage applied to the excitation coil 6 1 RC is also adjusted by this excitation drive circuit 6 3 ED.
  • AC motor 6 1 Steady armature coil 6 1 SC output line of each phase is power converter 6 3 P 3-phase switching element (UP ⁇ book) And a power supply line connected to the high potential side terminal and the low potential side terminal of the DC power supply 31 via the rectifier element.
  • the power converter 6 3 P is an inverter that converts the DC power stored in the DC power supply 3 1 to DC to AC and feeds it to the armature coil 6 1 SC when the AC motor 61 is controlled. Operates as a circuit.
  • the power converter 6 3 P when controlling the power generation using the AC motor 61 as a generator, converts the AC power output from the armature coil 6 1 SC by power generation into AC / DC conversion and supplies the power to the power line. It operates as a bar (rectifier) circuit.
  • the on / off operation of the switching elements (U! 1 to WN) related to the operation of the power converter 6 3 P is operated by the motor controller 6 3 C.
  • the motor controller 6 3 C has switching means for switching the power mode and the power generation mode based on a command from the control device 51, and performs power control and power generation control.
  • the motor controller 6 3 When controlling the AC motor 61 as a motor, the motor controller 6 3 operates as an inverse circuit that converts DC power from the DC power source 31 into AC power, and the AC motor 61 as a generator. When generating control is performed, it operates as a converter (rectifier) circuit that converts AC power from AC motor 61 to DC power.
  • a converter rectifier
  • the motor control device 63 controls the AC motor 61. That is, AC power is supplied to the AC motor 61 from the DC power source 31 via the motor control device 63.
  • the output shaft of the AC motor 61 generates a running torque and rotates the crankshaft of the engine via the power transmission means.
  • the motor controller 6 3 stops the power control to the AC motor 61 and performs power generation control. That is, the AC motor 61 is driven by the power of the engine to generate power.
  • the AC power generated by the power generation is converted to DC power by the motor control device 63 and charged to the DC power source 31.
  • the AC motor 61 functions as a motor that generates power by supplying power from the DC power source 31 and also functions as a generator that generates power by supplying power from the engine.
  • FIG. 3 is a cross-sectional view showing the configuration of a motor incorporating a semiconductor device according to an embodiment of the present invention.
  • the AC motor 61 includes a steering 61 S fixed by two brackets 61 BF and 61 BR, and a rotor 61 R rotatably held inside the steering 61 S.
  • the shaft 61 RS of the rotor 61 R is rotatably supported by bearings 61 BE 1 and 61 BE 2 mounted on two brackets.
  • the stage 61 S is composed of a stator core 61 SC and a stator coil 61 SO.
  • Koutuchichi 61 R is composed of a rotor core 61 RC and a rotor coil 61 RO.
  • the motor control device 63 shown in FIG. 2 is attached to the bracket 61 BR.
  • the power conversion device 63 P in the motor control device 63 is fixed to the rear bracket 61 BR by its heat sink.
  • the rear bracket 61 BR is provided with air cooling fins 6 1 CF.
  • the battery terminal 61BT is a positive terminal and the rear bracket 61BR is a negative terminal (ground terminal).
  • the rear bracket 61 BR has the two functions of a power converter 63 P, which is a semiconductor device, and a cooler and electrical wiring, so that the motor 60 with a built-in semiconductor device is dedicated inside the module 60 with a built-in semiconductor device.
  • the ground wiring can be omitted. Due to the effect of reducing the number of components, the semiconductor device built-in mode of the present embodiment makes it possible to incorporate the semiconductor device without enlarging the motor.
  • the rear bracket 61 BR uses a good conductor such as aluminum for use as wiring.
  • the configuration of the power conversion device 63P which is a semiconductor device used in the motor 60 incorporating the semiconductor device according to the present embodiment, will be described with reference to FIG.
  • FIG. 4 is a perspective view showing a configuration of a power conversion device which is a mobile semiconductor device incorporating a semiconductor device according to an embodiment of the present invention.
  • the wiring structure of the power converter 63 P which is a semiconductor device, needs to be a structure that enables this.
  • the structure of the power conversion device 6 3 P which is a semiconductor device, is configured as shown in FIG.
  • FIG. 4 illustrates a wiring structure directly related to the present invention in a semiconductor device built in a motor.
  • the heat dissipation plate 7 is made of a good conductor such as copper or copper-molybdenum, and the power semiconductor element 1 3 b on the low side of the bridge circuit
  • the laminated conductor plate 15 b connected to the source electrode of the switching element UN, VN, ⁇ in Fig. 2 is connected to the heat sink 7 at the other end.
  • the heat sink functions as a ground wiring.
  • the heat sink 7 is fixed to the rear bracket 6 1 BR with the conductor screw 8 etc., heat is transferred from the contact surface with the heat sink 7 and electricity is transferred from the conductor screw to the rear bracket 6 1 BR.
  • Abracket 6 1 BR has the two functions of a semiconductor device cooler and electrical wiring as a power converter.
  • the reliability of a high-temperature environment is improved by integrating functions such as providing a semiconductor device heat sink and a motor rear bracket with heat dissipation and electrical wiring functions. Space saving is realized. As a result, motors with built-in semiconductor devices can be replaced with generator motors installed in high-temperature environments near the engine in terms of size and reliability.
  • FIG. 5 is a cross-sectional view showing a configuration of a power conversion device that is a semiconductor device according to an embodiment of the present invention.
  • the power semiconductor element 13 a and the laminated conductor plate 15 a are joined together by a joining material 18 a.
  • the laminated conductor plate 15a and the conductor plate 10b are joined by a joining material 18b. Since the bonding materials 1 8 a and 1 8 b are parts through which current flows, the materials used are solder or nano-particle high electrical conductivity materials mainly composed of Au and Ag.
  • the laminated conductor plate 15a is a component in which an iron-nickel alloy plate 17 is sandwiched from both sides by copper plates 16a, 16b of approximately the same thickness. When 1 6 b is 1, iron-nickel alloy 1 7 is 1-2.
  • the equivalent linear expansion coefficient of the laminated conductor plate 15 a is calculated as follows.
  • Equation (1) is the result of a laminated board made of different materials. It is a formula that approximates the equivalent linear expansion coefficient.
  • Equivalent linear expansion coefficient- ⁇ Linear expansion coefficient X Young's modulus X plate thickness
  • No. Young's modulus X plate thickness
  • the equivalent linear expansion coefficient of laminated conductor plate 15a is approximately 8 It can be calculated as ⁇ 12 ppm / ° C.
  • the linear expansion coefficient of copper is about 18 p pmZ ° C
  • the linear expansion coefficient of iron-nickel alloy is about 1.5 p pmZ ° C
  • the Young's modulus of copper is 118 Gpa
  • the ungau rate of iron-nickel alloy is 144 Gpa. .
  • the semiconductor element 13a and the conductor plate 10a are joined by solder 12b.
  • the insulating substrate 9 and the heat sink 7 are joined by solder 12a.
  • the insulating substrate 9 is a member in which the conductive plates 10a and 1Ob are stacked in the first layer, the insulator 11 is stacked in the second layer, and the conductive plate 10c is stacked in the third layer.
  • Conductor plates 10a, 10b, and 10c are made of copper, and insulator 1 1 is made of silicon nitride.
  • the thickness of each layer is 0.4mm for the first and third layers, and the second layer is 0mm.
  • the equivalent linear expansion coefficient of the insulating substrate 9 is about 1 O p pm / ° C from equation (1).
  • the linear expansion coefficient of silicon nitride was 2.7 p pmZ
  • the Young's modulus was 303 Gpa
  • the physical properties of copper were the values described above.
  • a heat resistant material is used because it is used in a high temperature environment near the engine.
  • the power semiconductor element 13a is made to have substantially the same linear expansion as the insulating substrate 9 having an equivalent linear expansion coefficient of 10 ppm / ° C and the laminated conductor plate 15a having an equivalent linear expansion coefficient of 8 to 12 ppmZt: Therefore, the difference in expansion of each member, which becomes remarkable in a high temperature environment, can be reduced.
  • the thermal stress generated in the solder 12 b and the bonding material 18 a is minimized, and the long-term reliability is most improved. be able to.
  • the above-mentioned equivalent linear expansion coefficient of the insulating substrate 9 is an example calculated with specific values, but the equivalent linear expansion coefficient range is calculated from the material and thickness range used for the insulating substrate as follows: .
  • the copper thickness of the 1st and 3rd layers is about 0.4mm to 0.
  • the second layer is a silicon nitride plate
  • the thickness is from 0.32 mm to 64 mm
  • the second layer is an aluminum nitride plate
  • the thickness is approximately 0. 6 4 mm.
  • the laminated conductor plate 15 a has a linear expansion coefficient of the insulating substrate when the thickness of the iron-nickel alloy 17 is in the range of 1 to 2 with respect to the thickness 1 of the copper plates 16 a and 16 b. It can be seen that the values can be close.
  • the above explanation is based on the premise that each component remains flat even after thermal expansion.
  • the laminated conductor plate 15 a is made of the same material and the same thickness, but different materials. By sandwiching this plate, it is possible to keep the joint surface with the power semiconductor element flat without deforming into a bow shape even when thermally expanded.
  • the semiconductor device includes the semiconductor device in the generator motor (alternate-evening), and the semiconductor device is located in a high-temperature environment near the engine, as in the case of adding a caulking function. In some cases, long-term reliability in high temperature environments can be improved.
  • the long-term reliability of the power conversion device incorporating the semiconductor device according to the present embodiment against a high temperature environment can be improved.
  • the power generation module according to the present embodiment is capable of a power running operation by incorporating a semiconductor device with improved long-term reliability against a high temperature environment.
  • the hybrid vehicle according to the present embodiment incorporates a semiconductor device with improved long-term reliability against high temperature environments and can perform an idle stop operation.
  • FIG. 6 is a cross-sectional view showing a configuration of a power conversion device which is a semiconductor device according to another embodiment of the present invention.
  • one of the laminated conductor plates 15a is joined to the conductor plate 10b, but the present invention has a configuration in which one of the laminated conductor plates 15a is joined to the conductor plate 1Ob. Limited to However, another embodiment will be described with reference to FIG.
  • This embodiment is different from the embodiment of FIG. 5 in that the wire 14 d is joined to the laminated wiring board 18 a and the wire 14 d is joined to the conductor plate 10 b.
  • the wire 14 d is a wiring mainly composed of aluminum. Since the rest of the structure is the same, this embodiment has the effect of reducing the thermal stress generated in the bonding material 18a and the solder 12b in a high temperature environment, as in the embodiment of FIG.
  • the iron-nickel alloy used in the second layer of laminated wiring board 1 8a has a thermal conductivity of 1 l W / m ° C (reference value: thermal conductivity of copper 3 80 W / m ° C, thermal conductivity of aluminum 2 3 3 W / m ° C), power semiconductor element 1 3 a to wire 1 4 d
  • the thermal conductivity 1 l W / m ° C
  • the power semiconductor element that performs current switching is the hottest component, but due to the increase in thermal resistance, the temperature at the junction between the above-mentioned laminated wiring board 1 8a and wire 1 4d is reduced to the conventional level.
  • the wire can be lowered.
  • a reduction in the temperature of the joint means a reduction in the thermal expansion of the part, and thus shows that long-term reliability is improved compared to the case where the wire is directly joined to the power semiconductor element.
  • the semiconductor device includes the semiconductor device in the generator motor (alternate-evening), and the semiconductor device is located in a high-temperature environment near the engine, as in the case of adding a caulking function. In some cases, long-term reliability in high temperature environments can be improved.
  • the wire wiring that can increase the degree of freedom of the wiring layout of the semiconductor device can be applied to a semiconductor device that uses it in a high temperature environment.
  • the long-term reliability of the power conversion device incorporating the semiconductor device according to the present embodiment against a high temperature environment can be improved.
  • the power generation motor according to the present embodiment can be operated in a row by incorporating a semiconductor device with improved long-term reliability against a high temperature environment.
  • the hybrid vehicle according to the present embodiment incorporates a semiconductor device with improved long-term reliability against high temperature environments and can perform an idle stop operation.
  • the power semiconductor element is a MO SFET.
  • the present invention can be applied to any semiconductor device having two upper and lower electrodes for input and output of the main current, such as IGBT (Insulated Gate Bipolar Transistor).
  • IGBT Insulated Gate Bipolar Transistor
  • the semiconductor device of the present invention is not limited to a semiconductor device built in a motor, and can also be applied to a power conversion device.
  • this semiconductor device By applying this semiconductor device to a power conversion device, it is possible to provide a power conversion device that can be installed in a high-temperature environment and can ensure long-term reliability without having a dedicated cooler. become.
  • the linear expansion coefficient of the laminated conductor plate bonded to the electrode of the power semiconductor element is in the range of 8 to 12 pp mZ ° C, and the solder, gold, or Bonding to the upper surface electrode using any of the silver nanoparticles can improve the long-term reliability of the power semiconductor element junction in a high temperature environment.
  • the semiconductor built-in module of this embodiment has a high temperature in the vicinity of the engine in terms of dimensions and reliability by integrating functions such as providing the heat sink function of the semiconductor device in addition to the heat dissipation function. Since it can replace the generator motor installed in the environment, an idle stop system that can be easily applied to a wide variety of vehicles can be realized at low cost.
  • the semiconductor device when the semiconductor device is located in a high-temperature environment near the engine as in the case where a power generation function is added to a built-in semiconductor device in the generator motor (alternate evening), a long-term operation against a high-temperature environment is possible.
  • a semiconductor device capable of improving reliability can be provided.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
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Abstract

L'invention concerne un dispositif à semi-conducteur dont la fiabilité à long terme dans un milieu à température élevée peut être améliorée lorsque ce dispositif est placé au voisinage d'un moteur à combustion, par exemple lorsqu'un moteur de génératrice (alternateur) intégrant un dispositif à semi-conducteur est doté de surcroît d'une fonction d'alimentation électrique. Ce dispositif à semi-conducteur comporte un élément à semi-conducteur de puissance (13a) mettant en oeuvre, sur ses surfaces supérieure et inférieure, des électrodes permettant d'injecter/de débiter un courant principal, et un panneau isolant (9) destiné à porter l'électrode de surface inférieure d'un élément à semi-conducteur de puissance (12a). Une plaque conductrice (15a) présentant un coefficient de dilatation linéaire de l'ordre de 8-12 ppm/°C est mise en oeuvre et soudée à l'électrode de surface supérieure de l'élément à semi-conducteur de puissance (13a) par soudure à l'étain ou indifféremment à l'or ou à l'argent.
PCT/JP2004/000660 2004-01-26 2004-01-26 Dispositif a semi-conducteur, convertisseur de puissance le mettant en oeuvre, moteur electrique le mettant en oeuvre, automobile hybride le mettant en oeuvre, et systeme de commande de moteur electrique le mettant en oeuvre WO2005071733A1 (fr)

Priority Applications (2)

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PCT/JP2004/000660 WO2005071733A1 (fr) 2004-01-26 2004-01-26 Dispositif a semi-conducteur, convertisseur de puissance le mettant en oeuvre, moteur electrique le mettant en oeuvre, automobile hybride le mettant en oeuvre, et systeme de commande de moteur electrique le mettant en oeuvre
JP2005517178A JPWO2005071733A1 (ja) 2004-01-26 2004-01-26 半導体装置，それを用いた電力変換装置，それを用いたモータ，それを用いたハイブリッド自動車及びそれを用いたモータ駆動システム

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PCT/JP2004/000660 WO2005071733A1 (fr) 2004-01-26 2004-01-26 Dispositif a semi-conducteur, convertisseur de puissance le mettant en oeuvre, moteur electrique le mettant en oeuvre, automobile hybride le mettant en oeuvre, et systeme de commande de moteur electrique le mettant en oeuvre

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WO2012076259A1 (fr) * 2010-12-06 2012-06-14 Robert Bosch Gmbh Composant à semi-conducteur, à stabilité renforcée vis-à-vis des effets thermomécaniques et procédé de mise en contact d'un semi-conducteur
JP2012145489A (ja) * 2011-01-13 2012-08-02 Sankei Engineering:Kk 検査用プローブの製造方法
WO2013171084A3 (fr) * 2012-05-16 2014-01-23 Robert Bosch Gmbh Dispositif de mise en contact électrique pour semi-conducteurs
JP2015222759A (ja) * 2014-05-22 2015-12-10 三菱電機株式会社 電力半導体装置
JP2017005037A (ja) * 2015-06-08 2017-01-05 三菱電機株式会社 電力用半導体装置
JP2019009349A (ja) * 2017-06-27 2019-01-17 日立金属株式会社 電気接続用部材、電気接続構造、および電気接続用部材の製造方法
WO2020255663A1 (fr) * 2019-06-20 2020-12-24 ローム株式会社 Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur
CN112410178A (zh) * 2020-12-04 2021-02-26 李娄 一种温控的微生物保存装置
CN112567504A (zh) * 2018-11-30 2021-03-26 日立金属株式会社 电连接用部件、电连接结构和电连接用结构的制造方法
JP7392558B2 (ja) 2020-04-13 2023-12-06 住友電気工業株式会社 光モジュール

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JP2001036001A (ja) * 1999-07-21 2001-02-09 Toyota Central Res & Dev Lab Inc 電力半導体モジュール
JP2002186222A (ja) * 2000-12-18 2002-06-28 Mitsubishi Electric Corp 制御装置一体型電動機およびこれを搭載した自動車
JP2003229449A (ja) * 2002-01-31 2003-08-15 Toyota Motor Corp 半導体装置およびその製造方法
JP2003332393A (ja) * 2002-05-16 2003-11-21 Sanyo Electric Co Ltd 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012076259A1 (fr) * 2010-12-06 2012-06-14 Robert Bosch Gmbh Composant à semi-conducteur, à stabilité renforcée vis-à-vis des effets thermomécaniques et procédé de mise en contact d'un semi-conducteur
JP2012145489A (ja) * 2011-01-13 2012-08-02 Sankei Engineering:Kk 検査用プローブの製造方法
WO2013171084A3 (fr) * 2012-05-16 2014-01-23 Robert Bosch Gmbh Dispositif de mise en contact électrique pour semi-conducteurs
JP2015222759A (ja) * 2014-05-22 2015-12-10 三菱電機株式会社 電力半導体装置
JP2017005037A (ja) * 2015-06-08 2017-01-05 三菱電機株式会社 電力用半導体装置
JP2019009349A (ja) * 2017-06-27 2019-01-17 日立金属株式会社 電気接続用部材、電気接続構造、および電気接続用部材の製造方法
CN112567504A (zh) * 2018-11-30 2021-03-26 日立金属株式会社 电连接用部件、电连接结构和电连接用结构的制造方法
WO2020255663A1 (fr) * 2019-06-20 2020-12-24 ローム株式会社 Dispositif à semi-conducteur et procédé de production de dispositif à semi-conducteur
JP7451521B2 (ja) 2019-06-20 2024-03-18 ローム株式会社 半導体装置及び半導体装置の製造方法
JP7392558B2 (ja) 2020-04-13 2023-12-06 住友電気工業株式会社 光モジュール
CN112410178A (zh) * 2020-12-04 2021-02-26 李娄 一种温控的微生物保存装置

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