WO2005050845A1 - Taktsignal-ein-/ausgabevorrichtung, insbesondere zur korrektur von taktsignalen - Google Patents
Taktsignal-ein-/ausgabevorrichtung, insbesondere zur korrektur von taktsignalen Download PDFInfo
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- WO2005050845A1 WO2005050845A1 PCT/EP2004/052937 EP2004052937W WO2005050845A1 WO 2005050845 A1 WO2005050845 A1 WO 2005050845A1 EP 2004052937 W EP2004052937 W EP 2004052937W WO 2005050845 A1 WO2005050845 A1 WO 2005050845A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/15—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
- H03K5/151—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
- H03K5/1565—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern the output pulses having a constant duty cycle
Definitions
- the invention relates to a clock signal input / output device, in particular for correcting clock signals, and a clock signal correction method.
- DRAM Dynamic Random Access Memory or dynamic random access memory
- clock signals are used to coordinate the processing or switching of the data.
- a single clock signal present on a single line is used (i.e. a so-called “single ended” clock signal).
- the data can then e.g. be switched on each time on the rising clock edge of the individual clock signal (or alternatively, for example, each time on the falling single clock signal edge).
- DDR DRAM double data rate - DRAM or DRAM with double data rate
- Clock signals from a "logic high” state e.g. a high voltage level
- a "logic low” state for example a low voltage level
- the second clock signal changes its state from “logic low” to "logic high” (for example from a low to a high voltage level) substantially simultaneously.
- the second clock signal changes its state from “again essentially simultaneously” logic high “to” logic low “(eg from a high to a low voltage level).
- the data is generally switched on both on the rising edge of the first clock signal and on the rising edge of the second clock signal (or both on the falling edge of the first clock signal and on the falling edge of the second clock signal).
- the data is thus passed on more frequently or faster in a DDR component (in particular twice as often or twice as quickly) as in the case of corresponding conventional components with a single or "single ended" clock signal - ie the data rate higher, in particular twice as high, as with corresponding, conventional components.
- the clock signal (“DQS” or “data strobe” signal used internally in the component for the temporal coordination of the processing or further switching of the data) (or - when using differential, counter-inverse clock signals - the internal clock signal DQS , and the clock signal BDQS, which is inverse to the clock signal DQS, must be synchronous with a clock signal (“clk” - or “Clock” signal) (or in synchronism with the differential clock signals clk, bclk entered externally into the component).
- clk clock signal
- the one or more external clock signals clk, bclk is or are generated by a corresponding external clock signal transmitter connected to the component.
- DLL Delay-Locked-Loop
- a clock signal synchronization device can have, for example, a first delay device into which the external clock signal (s) clk, bclk are input and which input clock signal (s) clk, bclk - depending on a control signal output by a phase comparison device - with - by the control signal adjustable, variable - delay time t va r applied.
- the signal (s) output by the first delay device can be - internally - in
- Component for the temporal coordination of the processing or further switching of the data can be used (i.e. as - internal (s) - clock signal (s) DQS or BDQS).
- the signal DQS output by the first delay device is fed to a second delay device which applies a - fixed - delay time t const to the input signal DQS, which is approximately the sum corresponds to the signal delays caused by the receiver or receivers (“receiver delay”), the respective data path (“data path delay”), and the off-chip driver (s) (“OCD delay”).
- receiver delay the signal delays caused by the receiver or receivers
- data path delay the respective data path
- OCD delay off-chip driver
- the signal output by the second delay device (FB signal or “feedback signal”) is fed to the above-mentioned phase comparison device, and there the phase position of the FB signal is compared with that of the clk signal, which is also input into the phase comparison device.
- phase comparison device - determines whether the phase of the FB signal leads or lags that of the clk signal is determined by the phase comparison device - as a control signal for the above-mentioned first delay device - an increment signal (INC signal) or a decrement signal (DEC signal ) are output, which lead to the fact that the delay t va r of the clk signal caused by the first signal delay device - with an INC signal - is increased or - with a DEC signal - is reduced, so that the clk and the FB signal synchronized, ie the clock signal synchronization device is “locked”.
- IRC signal increment signal
- DEC signal decrement signal
- the clock signal clk (or the differential clock signals clk, bclk provided by the above-mentioned external clock signal generator).
- the "logically low" state of the clk signal lasts, for example, shorter (or, for example, longer) than the "logically high” state of the clk signal (and, for example, the "logically low” state of the bclk signal longer (or shorter, for example) than the "logically high” state of the bclk signal).
- the clock signal synchronization device for example the DLL Circuit internal clock signal DQS or BDQS obtained from the external clock signal clk or bclk are relatively strongly distorted.
- the object of the invention is therefore to provide a - novel - clock signal input / output device and a novel clock signal correction method, in particular a device and a method with which - distorted - external clock signals clk, bclk less distorted or essentially undistorted clock signals can be obtained.
- a clock signal input / output device into which a clock signal (clk) or a signal obtained therefrom is input and forwarded to a frequency divider device, an output from the frequency divider device, or a signal (clk2) obtained therefrom is forwarded to a signal integrating device, and wherein a signal output from the signal integrating device, or a signal (12) obtained therefrom is forwarded to a first signal comparison circuit, the The signal (clk2) output by the frequency divider device, or the signal obtained therefrom, is additionally passed on to a second signal comparison circuit, and the clock signal input / output device additionally has a signal output circuit for outputting a clock signal.
- Output signal (clk50) as a function of a signal (riclk) output or obtained from the first signal comparison circuit, and of a signal (rclk) output or obtained from the second signal comparison circuit.
- Figure 1 is a schematic representation of a clock signal input / output device according to an embodiment of the invention.
- FIG. 2 shows a schematic illustration of a clock signal input / output device according to a further exemplary embodiment of the invention
- FIG. 3 shows timing diagrams of the signals clk and bclk, respectively, input to the clock signal input / output device shown in FIG. 1 and FIG. 2, the signals generated internally in the device, and the signals output by the device;
- FIG. 4 shows a schematic illustration of a system for correcting clock signals according to an exemplary embodiment of the invention.
- FIG. 5 shows a detailed illustration of the frequency restoration circuit shown in FIG. 1 and FIG. 2.
- FIG. 1 shows a schematic illustration of a clock signal input / output device 1 or a clock signal correction device 1 according to an exemplary embodiment of the invention.
- This has a frequency divider device 4, a signal integrating device 6, two - identical or essentially identical - signal comparison or signal receiver circuits 8, 9, and a frequency restoring circuit 11 ,
- DRAM Dynamic Random Access Memory or dynamic random access memory
- DDRDRAM Double Data Rate - DRAM or DRAM with double data rate
- the corresponding semiconductor component has an - external - connection 2a, (for example a corresponding pad or a corresponding pin) on which - for the temporal coordination of the processing or further switching of the data in the semiconductor component - by an external clock signal transmitter an external clock signal clk is applied.
- an external clock signal clk for example a corresponding pad or a corresponding pin
- the component has a corresponding - further - external connection 2b (for example a corresponding further pad or a corresponding further pin), to which a further external clock signal bclk is applied, for example by the above-mentioned external clock signal transmitter.
- the clock signals clk, bclk can be opposite-inverse to each other (ie in the Clock signals can be so-called "differential" clock signals clk, bclk).
- the data can e.g. both on the rising edge of the clk and the rising edge of the bclk clock signal (or both the rising edge of a DQS signal obtained therefrom and the rising edge of a BDQS signal obtained therefrom are switched on (or - alternatively - for example with the falling clock edges of the corresponding signals)).
- the clk signal present at the connection 2a of the semiconductor component - possibly with the interposition of a corresponding receiver circuit - is fed via a line 3a to a first input of the frequency divider device 4.
- connection 2b of the semiconductor component is - possibly also with the interposition of the above.
- Receiver circuit - fed via a line 3b to a second input of the frequency divider device 4.
- Frequency f / 2 signal clk2 is output - is via a line 5a to a first input of the.
- Signal integrator 6 connected.
- Frequency division is achieved such that - as shown in FIG. 3 - the signal clk2 changes its state (for example with a first positive edge of the clk signal from “logic low” to “logic high”, and on a second, subsequent positive edge of the clk signal back from “logic high” to “logic low”).
- a second output of the frequency divider device 4 (at which a signal bclk2 which is half the frequency f / 2 compared to the frequency f of the signal bclk and is inverse to the signal clk2) is output via a line 5b to a second input of the Signal integrator ⁇ connected.
- the frequency division achieved by the frequency divider device 4 ensures that - as shown in FIG. 3 - e.g.
- the signal bclk2 changes its state on a positive edge of the clk signal (for example the signal bclk2 changes on a first positive edge of the clk signal - vice versa like the signal clk2 - from “logic high” to “logic low”, and at a second, subsequent positive edge of the clk signal - vice versa like the signal clk2 - back from "logic low” to "logic high”).
- Signal 12 is output - via a line 7a to a first input of the above.
- Signal comparison circuit 8 connected.
- any signal comparison or signal receiver circuits can be used as signal comparison or signal receiver circuits 8, 9, e.g. correspondingly constructed similarly to corresponding conventional clock receiver circuits, e.g. four cross-coupled transistors (e.g. a first and a second p-channel field effect transistor, and a first and a second n-channel field effect transistor) having receiver circuits.
- cross-coupled transistors e.g. a first and a second p-channel field effect transistor, and a first and a second n-channel field effect transistor
- the source of the first and second n-channel field effect transistors can e.g. be connected to a (direct or constant) current source, e.g. is connected to the ground potential.
- the drain of the first n-channel field effect transistor can e.g. to the gate of the first and second p-channel
- Field effect transistor can be connected, and to the drain of the first p-channel field effect transistor, and to a (first) output of the respective circuit 8, 9 (at which - as shown in FIG. 1 - a signal riclk or a signal rclk are picked up, for example can).
- the drain of the second n-channel field effect transistor can be connected, for example, to the drain of the second p-channel Field-effect transistors can be connected, as well as to a (second) output of the respective circuit 8, 9 (at which - as shown in FIG. 1 - a signal brlclk or brclk, for example, which is inverse to the signal riclk or rclk, can be tapped).
- the sources of the first and second p-channel field effect transistors can e.g. each connected to the supply voltage.
- the first output of the signal comparison circuit 8 - e.g. via a first line of a corresponding line pair 10a - to the above Frequency recovery circuit 11 connected.
- the second exit is the
- Signal comparison circuit 8 - e.g. via a second line from the above Line pairs 10a - to the above Frequency recovery circuit 11 connected.
- Signal integrating device 6 additionally via a line 5d connected to line 5b to a second one Input of the above - second - signal comparison circuit 9 supplied.
- a first output of the signal comparison circuit 9 is - e.g. via a first line of a corresponding, further line pair 10b - to the above Frequency recovery circuit 11 connected.
- the signals clk2 and bclk2 present on the line 5a and 5b are integrated by the signal integrating device 6.
- the level of the signal 12 output on the line 7a by the signal integrating device 6 therefore rises - starting from the point in time at which a negative edge occurs with the signal clk2 - in a linear ramp-like manner until a point in time at which Signal clk2 a positive edge occurs, which leads to the fact that - until the next negative edge of the clk2 signal - the level of the signal 12 output on the line 7a by the signal integrating device 6 continues to decrease in a linear ramp manner.
- the level of the signal bl2 output on the line 7b by the signal integrating device 6 falls correspondingly inversely - starting from the point in time at which a negative edge (or a positive edge at the signal bclk2) occurs - in a linear, ramped manner from to a point in time in which a positive edge (or a negative bclk2 signal) occurs with the signal clk2, which leads to the fact that - until the next negative edge of the clk2 signal - the level of the signal integrator 6 on line 7b output signal bl2 continues to rise linearly in ramp form.
- the signal comparison circuit 8 always, when the level of the signal 12 is greater than the level of the signal bl2, at the (first) output - and thus on the first line of the above.
- Line pairs 10a - a "logic low" signal riclk output, and whenever the level of signal 12 is lower than the level of signal bl2, at the (first) output - and thus on the first line of the above.
- Line pairs 10a - a "logic high" signal riclk are Line pairs 10a - a "logic high" signal riclk.
- the signal comparison circuit 8 whenever the level of the signal 12 is lower than the level of the signal bl2 at the (second) output - and thus on the second line of the above.
- Line pairs 10a - a "logic low” signal brlclk is output, and whenever the level of signal 12 is greater than the level of signal bl2, a (second) output - and thus on the second line of the above-mentioned line pair 10a - turns on "Logically high" signal brlclk.
- the signal comparison circuit 9 whenever the level of the signal clk2 is lower than the level of the signal bclk2 at the (second) output - and thus on the second line of the above.
- Line pairs 10b - a “logically high” signal brclk is output, and whenever the level of the signal clk2 is greater than the level of the signal bclk2, it is connected to the (second) output - and thus to the second line of the above-mentioned line pair 10b "Logic low" signal brclk.
- a signal clk50 output by the frequency restoration circuit 11 on a line 12a changes its state from “logic low” to “logic high” when the signal rclk present on the first line of line pair 10b changes its state from “logically low” to “logically high”, and then back to “logically low” when the signal riclk present on the first line of line pair 10a changes its state from “logically low” to “logically high” Furthermore, this changes from the frequency
- a signal bclk50 output on a line 12b by the frequency restoration circuit 11 then changes its state from “logic high” to “logic low” when this occurs on the first line of the line pair 10b present signal rclk changes its state from “logically low” to “logically high” (or the signal brclk from “logically high” to “logically low”), and then back again to "logically high” if that at the Signal riclk present on the first line of line pair 10a changes its state from “logic low” to “logic high” (or the signal brlclk changes from "logic high” to “logic low”).
- FIG. 5 shows a detailed representation of the frequency restoration circuit 11.
- Each circuit section 301a, 301b, 301c, 301d each has a delay device 302a, 302b, 302c, 302d (each consisting of an odd number of inverters), a NAND gate 303a, 303b, 303c, 303d, an (additional) inverter 304a, 304b, 304c, 304d, and two - complementarily connected - transmission gates 305a, 305b, 305c, 305d and 306a, 306b, 30 ⁇ c, 306d.
- a delay device 302a, 302b, 302c, 302d each consisting of an odd number of inverters
- a NAND gate 303a, 303b, 303c, 303d an (additional) inverter 304a, 304b, 304c, 304d
- a signal rclk ', riclk', brclk 'or brlclk' which is output at the output of the respective NAND gate 303a, 303b, 303c, 303d therefore only becomes "logic low” if this is the first
- Input of the respective NAND gate 303a, 303b, 303c, 303d applied signal rclk, riclk, brclk or brlclk changes its state from “logic low” to "logic high” (and only for a relatively short period of time - corresponding to the above-mentioned delay time ⁇ T, because after the above-mentioned delay time ⁇ T the signal present at the second input of the respective NAND gate 303a, 303b, 303c, 303d changes its state from "logically high” to " logically low "changes).
- the signal rclk ', riclk', brclk 'or brlclk' output by the respective NAND gate 303a, 303b, 303c, 303d indicates that the corresponding signal rclk, riclk, brclk or brlclk has a positive clock edge having.
- an input of the transmission gates 305a, 305b, 306c, 306d is connected to the supply voltage (Power Supply Level VDLL), and an input of the transmission gates 306a, 306b, 305c, 305d to the ground ( Ground Level VSSDL).
- Power Supply Level VDLL Power Supply Level VDLL
- Ground Level VSSDL Ground Level VSSDL
- the outputs of the transmission gates 305a, 305b, 305c, 305d are connected to one another and connected to an input of a latch 307b, the output of which is connected to the above-mentioned.
- Line 12b is connected.
- the outputs of the transmission gates 306a, 306b, 306c, 306d are connected to one another and connected to an input of a latch 307a, the output of which is connected to the above-mentioned.
- Line 12a is connected.
- Each latch 307a, 307b can have, for example, a first and a second inverter, the output of the first inverter being fed back to the input of the first inverter via the second inverter.
- the above-mentioned signal rclk ', riclk', brclk 'or brlclk' which is output by the respective NAND gate 303a, 303b, 303c, 303d, is in each case directly to a first control input to respective transmission gates 305a, 306a or 305b, 30 ⁇ b or 305c, 306c or 305d, 306d, and - with the interposition of the respective inverter 304a, 304b, 304c, 304d - to a second control input of the respective transmission Gates 305a, 306a or 305b, 306b or 305c, 306c or 305d, 306d, and
- the corresponding (positive or negative) pulse signal (bDO) generated thereby, or the inverse (negative or positive) pulse signal (DO) is forwarded to the input of the latch 307a or 307b, so that the output of the respective latches 307a, 307b, the signal output (clk50 or bclk50) is switched accordingly (ie changes its state from “logic high” to “logic low”, or from "logic low” to “logic high”).
- the respective signal clk50, bclk50 then remains in the then reached state until the next of the signals rclk ', riclk', brclk 'or brlclk' - for a short time - becomes "logic low" (ie the corresponding signal rclk, riclk, brclk or brlclk has a positive clock edge).
- clock signal input / output device 1 With the aid of the clock signal input / output device 1, less distorted or essentially undistorted (clock) signals clk50 or bclk50 can be obtained from - distorted - external clock signals clk, bclk.
- DLL Delay-Locked-Loop
- FIG. 2 shows a schematic illustration of a clock signal input / output device 101 or a clock signal correction device 101 according to a further exemplary embodiment of the invention.
- the frequency recovery circuit 111 can e.g. be constructed correspondingly similar or identical to the frequency restoration circuit 111 shown in FIG. 5.
- the clock signal input / output device 101 can e.g. be provided on a semiconductor component, in particular a memory component such as a - e.g. on CMOS
- DRAM Dynamic Random Access Memory or dynamic random access memory
- DDR-DRAM Double Data Rate - DRAM or DRAM with double data rate
- the corresponding semiconductor component has an - external - connection 102a, (for example a corresponding pad or a corresponding pin), on which - for the temporal coordination of the processing or relaying of the data in the semiconductor component - by an external clock signal transmitter an external clock signal clk is applied.
- an external clock signal clk for example a corresponding pad or a corresponding pin
- the component has a corresponding - further, not shown here - external connection (e.g. a corresponding further pad or a corresponding further pin) to which - e.g. from the above external clock signal generator - another external clock signal bclk is applied.
- the clock signals clk, bclk can be mutually inverse to one another (i.e. the clock signals can be so-called “differential” clock signals clk, bclk).
- the data can, for example, on both the rising edge of the clk and the rising edge Edge of the bclk clock signal (or both the rising edge of a DQS signal obtained therefrom and the rising edge of a BDQS signal obtained therefrom can be switched on (or - alternatively - for example with the falling clock edges of the corresponding signals)).
- the clk signal present at the connection 102a of the semiconductor component is fed to an input of the frequency divider device 104 via line 103a, possibly with the interposition of a corresponding receiver circuit.
- a first output of the frequency divider device 104 - at which a signal clk2 having half the frequency f / 2 compared to the frequency f of the signal clk is output - is connected via a line 105a to a first input of the signal integrating device 106.
- the frequency division achieved by the frequency divider device 4 ensures that - as shown in FIG. 3 - e.g.
- the signal clk2 changes its state on a positive edge of the clk signal (for example, on a first positive edge of the clk signal from “logic low” to “logic high”, and on a second, subsequent positive edge of the clk signal back from “logic high” to “logic low”).
- a second output of the frequency divider device 104 (at which a signal bclk2 which is half the frequency f / 2 compared to the frequency f of the signal clk and is inverse to the signal clk2) is output via a line 105b to a second input of the signal Integrating device 106 connected.
- the signal bclk2 not output on line 105b is not obtained directly from a bclk signal present at the above-mentioned external semiconductor component connection , but - indirectly - from the inverse clk signal to the bclk signal.
- Frequency division is achieved that - as shown in Figure 3 - e.g.
- the signal bclk2 changes its state on a positive edge of the clk signal (for example the signal bclk2 changes on a first positive edge of the clk signal - vice versa like the signal clk2 - from “logic high” to “logic low”, and at a second, subsequent positive edge of the clk signal - vice versa like the signal clk2 - back from "logic low” to "logic high”).
- the first output of the signal integrating device 106 is - additionally - (via the above-mentioned line 107a) to a - the first input of the above-mentioned signal, which is inverse to the above-mentioned second input of the above-mentioned signal comparison circuit 108a Comparison circuit 108b connected. Furthermore, a second output of the signal integrating device 106 - at which a signal bl2 obtained, for example, by appropriate integration from the signal bclk and running inversely to the signal 12, is output - via a
- Line 107b and a line 107d connected to this - to a first input of the above.
- Signal comparison circuit 108a connected.
- the second output of the signal integrating device 106 is - in addition - (via the above-mentioned line 107b) to a second input of the above-mentioned.
- Signal comparison circuit 108b connected.
- any signal comparison or signal receiver circuits can be used as signal comparison or signal receiver circuits 108a, 108b, 109a, 109b, e.g. correspondingly constructed similarly to corresponding conventional clock receiver circuits, e.g. four cross-coupled transistors (e.g. a first and a second p-channel field effect transistor, and a first and a second n-channel field effect transistor) having receiver circuits.
- cross-coupled transistors e.g. a first and a second p-channel field effect transistor, and a first and a second n-channel field effect transistor
- the source of the first and second n-channel field effect transistors can e.g. be connected to a (direct or constant) current source, e.g. is connected to the ground potential.
- the gate of the first n-channel field effect transistor can be connected to the above (first) input of the respective circuit 108a, 108b, 109a, 109b
- the gate of the second n-channel field effect transistor can be connected to the above (second) input of the respective circuit 108a, 108b, 109a, 109b.
- the drain of the first n-channel field effect transistor can e.g. to the gate of the first and second p-channel
- Field effect transistor can be connected, and to the drain of the first p-channel field effect transistor, and to a (first) output of the respective circuit 108a, 108b, 109a, 109b (on which - as shown in Figure 2 - in the circuits 108a, 108b, 109a, 109b, for example, a signal brlclk, riclk, rclk or brclk can be tapped (the corresponding signals output at the respective second output of circuits 108a and 109b are not used in the present exemplary embodiment).
- the drain of the second n-channel field effect transistor can e.g. be connected to the drain of the second p-channel field-effect transistor and to the (second) output of the respective circuit 108a, 108b, 109a, 109b (which is not used in the present exemplary embodiment)).
- the sources of the first and second p-channel field effect transistors can e.g. each connected to the supply voltage.
- the first output of the signal comparison circuit 108a is - via a line 110a - to the above.
- Frequency recovery circuit 111 connected.
- the above-mentioned first output of the signal comparison circuit 108b is also connected to the above-mentioned frequency restoration circuit 111 via a line 110b.
- the above-mentioned signal clk2 which has half the frequency f / 2 compared to the frequency f of the signal clk, is additionally sent via the line 105a to the first input of the signal integrating device 106 via one to the Line 105a connected line 105c to a first input of the above-mentioned signal comparison circuit 109a, and - via a line 105e connected to line 105e - to a second input of the above-mentioned signal comparison circuit 109b.
- a first output of the signal comparison circuit 109a is - via a line 110c - to the above.
- Frequency recovery circuit 111 connected.
- a first output of the signal comparison circuit 109b is also connected to the above via a line 11Od.
- Frequency recovery circuit 111 connected.
- the signals clk2 and bclk2 present on the lines 105a and 105b are integrated by the signal integrating device 106.
- the level of the signal 12 output on the line 107a by the signal integrating device 106 therefore rises - starting from the point in time at which a negative edge occurs with the signal clk2 - in a linear ramp-like manner until a point in time at the Signal clk2 a positive edge occurs, which leads to the fact that - until the next negative edge of the clk2 signal - the level of the signal 12 output on the line 107a by the signal integrating device 106 continues to decrease in a linear ramp manner.
- the level of the signal bI2 output on the line 107b by the signal integrating device 106 correspondingly inversely decreases - starting from the point in time at which a negative edge (or a positive edge at the signal bclk2) occurs - in a linear, ramped manner down to a point in time at which a positive edge (or a negative signal bclk2) occurs at the signal clk2, which leads to the fact that - until the next negative edge of the clk2 signal - the level of the on line 107b of the signal integrating device 106 output signal bI2 increases linearly in a ramp.
- a signal clk50 output by the frequency restoration circuit 111 on a line 112a changes its state from “logic low” to “logic high” when the signal rclk on line 110c changes its state from “Logically low” changes to “logically high”, and then back to “logically low” when the signal riclk present on line 110b changes its state from “logically low” to “logically high”.
- the mode of operation of the clock signal input / output device 101 shown in FIG. 2 thus essentially corresponds to the mode of operation of the clock signal input / output device 1 shown in FIG. 1, except that the signals brlclk and riclk, or rclk and brclk, each from two different ones , instead of being generated by one and the same signal comparison or receiver circuit 108a, 108b, 109a, 109b, all positive edges of the output signals brlclk and riclk used here, or rclk and brclk of the receiver Circuits 108a, 108b, 109a, 109b are each triggered exclusively by corresponding positive edges of the corresponding signals controlling the receiver circuits 108a, 108b, 109a, 109b (12 and bl2 or clk2 and bclk2) (and not either by positive, or from negative edges of the control signals 12 and bl2 or clk2 and bclk2).
- clock signal input / output devices 1, 101 corresponding to the clock signal input / output devices 1, 101 shown in FIGS. 1 and / or 2 can be connected in series (for example two or three, etc. clock signal inputs / Output devices 1, 101).
- the signals clk50, bclk50 output by a first clock signal input / output device 1, 101 are used here as input signals for a second clock signal input / output device 1, 101 connected behind the first clock signal input / output device 1, 101 used, so that in the signals clk50, bclk50 any distortions from the - second - clock signal input
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Pulse Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04818827A EP1687897A1 (de) | 2003-11-24 | 2004-11-12 | Taktsignal-ein-/ausgabevorrichtung, insbesondere zur korrektur von taktsignalen |
JP2006525154A JP2007504730A (ja) | 2003-11-24 | 2004-11-12 | クロック信号の補正に適したクロック信号入出力装置 |
US11/374,990 US7227396B2 (en) | 2003-11-24 | 2006-03-15 | Clock signal input/output device for correcting clock signals |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10354818.1 | 2003-11-24 | ||
DE10354818A DE10354818B3 (de) | 2003-11-24 | 2003-11-24 | Taktsignsal-Ein-/Ausgabevorrichtung, insbesondere zur Korrektur von Taktsignalen |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/374,990 Continuation US7227396B2 (en) | 2003-11-24 | 2006-03-15 | Clock signal input/output device for correcting clock signals |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005050845A1 true WO2005050845A1 (de) | 2005-06-02 |
Family
ID=34072119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/052937 WO2005050845A1 (de) | 2003-11-24 | 2004-11-12 | Taktsignal-ein-/ausgabevorrichtung, insbesondere zur korrektur von taktsignalen |
Country Status (6)
Country | Link |
---|---|
US (1) | US7227396B2 (de) |
EP (1) | EP1687897A1 (de) |
JP (1) | JP2007504730A (de) |
CN (1) | CN100379151C (de) |
DE (1) | DE10354818B3 (de) |
WO (1) | WO2005050845A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8181056B2 (en) * | 2008-09-30 | 2012-05-15 | Mosaid Technologies Incorporated | Serial-connected memory system with output delay adjustment |
US8161313B2 (en) * | 2008-09-30 | 2012-04-17 | Mosaid Technologies Incorporated | Serial-connected memory system with duty cycle correction |
US8281379B2 (en) * | 2008-11-13 | 2012-10-02 | Vasco Data Security, Inc. | Method and system for providing a federated authentication service with gradual expiration of credentials |
US8265568B2 (en) * | 2009-03-19 | 2012-09-11 | Qualcomm Incorporated | Frequency divider with synchronized outputs |
JP6372324B2 (ja) * | 2014-11-25 | 2018-08-15 | 富士通株式会社 | 受信回路、メモリインターフェース回路および受信方法 |
KR102379446B1 (ko) * | 2015-12-16 | 2022-03-30 | 에스케이하이닉스 주식회사 | 듀티 사이클 보정 회로 및 듀티 사이클 보정 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778550A (en) * | 1970-07-31 | 1973-12-11 | Philips Corp | System for synchronizing clock signals to incoming data |
US4881243A (en) * | 1984-06-07 | 1989-11-14 | British Telecommunications Public Limited Company | Signal timing circuits |
DE4305244A1 (de) * | 1993-02-20 | 1994-08-25 | Maz Mikroelektronik Anwendungs | Bit-Synchronisierer zum Einsatz in Systemen mit sehr hohen Taktraten |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2709005B1 (fr) * | 1993-08-13 | 1995-11-10 | Motorola Semiconducteurs | Circuit destiné à une utilisation avec un agencement de retour. |
FR2736780B1 (fr) * | 1995-07-13 | 1997-09-26 | Sgs Thomson Microelectronics | Circuit d'affectation d'un canal de transmission sur le reseau electrique |
US6100733A (en) * | 1998-06-09 | 2000-08-08 | Siemens Aktiengesellschaft | Clock latency compensation circuit for DDR timing |
US6127866A (en) * | 1999-01-28 | 2000-10-03 | Infineon Technologies North America Corp. | Delay-locked-loop (DLL) having symmetrical rising and falling clock edge type delays |
US6426660B1 (en) * | 2001-08-30 | 2002-07-30 | International Business Machines Corporation | Duty-cycle correction circuit |
-
2003
- 2003-11-24 DE DE10354818A patent/DE10354818B3/de not_active Expired - Fee Related
-
2004
- 2004-11-12 WO PCT/EP2004/052937 patent/WO2005050845A1/de active Application Filing
- 2004-11-12 CN CNB2004800244231A patent/CN100379151C/zh not_active Expired - Fee Related
- 2004-11-12 JP JP2006525154A patent/JP2007504730A/ja active Pending
- 2004-11-12 EP EP04818827A patent/EP1687897A1/de not_active Withdrawn
-
2006
- 2006-03-15 US US11/374,990 patent/US7227396B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778550A (en) * | 1970-07-31 | 1973-12-11 | Philips Corp | System for synchronizing clock signals to incoming data |
US4881243A (en) * | 1984-06-07 | 1989-11-14 | British Telecommunications Public Limited Company | Signal timing circuits |
DE4305244A1 (de) * | 1993-02-20 | 1994-08-25 | Maz Mikroelektronik Anwendungs | Bit-Synchronisierer zum Einsatz in Systemen mit sehr hohen Taktraten |
Also Published As
Publication number | Publication date |
---|---|
CN100379151C (zh) | 2008-04-02 |
JP2007504730A (ja) | 2007-03-01 |
DE10354818B3 (de) | 2005-02-17 |
EP1687897A1 (de) | 2006-08-09 |
CN1842963A (zh) | 2006-10-04 |
US7227396B2 (en) | 2007-06-05 |
US20060214716A1 (en) | 2006-09-28 |
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