WO2005050701A3 - Structures contraintes de dispositif a semi-conducteur comprenant un materiau semi-conducteur granulaire - Google Patents

Structures contraintes de dispositif a semi-conducteur comprenant un materiau semi-conducteur granulaire Download PDF

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Publication number
WO2005050701A3
WO2005050701A3 PCT/US2004/037434 US2004037434W WO2005050701A3 WO 2005050701 A3 WO2005050701 A3 WO 2005050701A3 US 2004037434 W US2004037434 W US 2004037434W WO 2005050701 A3 WO2005050701 A3 WO 2005050701A3
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WIPO (PCT)
Prior art keywords
semiconductor material
semiconductor device
device structures
stressed
granular
Prior art date
Application number
PCT/US2004/037434
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English (en)
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WO2005050701A2 (fr
WO2005050701A8 (fr
Inventor
Bruce B Doris
Michael P Belyansky
Diane C Boyd
Dusreti Chidambarrao
Oleg Gluschenkov
Original Assignee
Ibm
Doric Bruce B
Michael P Belyansky
Diane C Boyd
Chidambarrao Dureseti
Oleg Gluschenkov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Doric Bruce B, Michael P Belyansky, Diane C Boyd, Chidambarrao Dureseti, Oleg Gluschenkov filed Critical Ibm
Priority to JP2006539779A priority Critical patent/JP4843498B2/ja
Priority to AT04810633T priority patent/ATE512465T1/de
Priority to EP04810633A priority patent/EP1683187B1/fr
Publication of WO2005050701A2 publication Critical patent/WO2005050701A2/fr
Publication of WO2005050701A8 publication Critical patent/WO2005050701A8/fr
Publication of WO2005050701A3 publication Critical patent/WO2005050701A3/fr

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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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Abstract

L'invention concerne un procédé permettant de fabriquer une structure de dispositif à semi-conducteur, qui consiste: à fournir un substrat et une électrode sur ledit substrat, à former un évidemment dans l'électrode, ledit évidemment possédant une ouverture, à disposer un matériau semi-conducteur à petits grains dans l'évidement, à recouvrir l'ouverture afin que ledit évidement contienne le matériau semi-conducteur à petits grains, et à effectuer un recuit de la structure résultante.
PCT/US2004/037434 2003-11-14 2004-11-09 Structures contraintes de dispositif a semi-conducteur comprenant un materiau semi-conducteur granulaire WO2005050701A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006539779A JP4843498B2 (ja) 2003-11-14 2004-11-09 半導体デバイス構造を製造する方法
AT04810633T ATE512465T1 (de) 2003-11-14 2004-11-09 Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial
EP04810633A EP1683187B1 (fr) 2003-11-14 2004-11-09 Structures contraintes de dispositif a semi-conducteur comprenant un materiau semi-conducteur granulaire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,018 US7122849B2 (en) 2003-11-14 2003-11-14 Stressed semiconductor device structures having granular semiconductor material
US10/707,018 2003-11-14

Publications (3)

Publication Number Publication Date
WO2005050701A2 WO2005050701A2 (fr) 2005-06-02
WO2005050701A8 WO2005050701A8 (fr) 2005-11-03
WO2005050701A3 true WO2005050701A3 (fr) 2006-01-05

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PCT/US2004/037434 WO2005050701A2 (fr) 2003-11-14 2004-11-09 Structures contraintes de dispositif a semi-conducteur comprenant un materiau semi-conducteur granulaire

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US (2) US7122849B2 (fr)
EP (1) EP1683187B1 (fr)
JP (1) JP4843498B2 (fr)
KR (1) KR100946038B1 (fr)
CN (1) CN100468785C (fr)
AT (1) ATE512465T1 (fr)
WO (1) WO2005050701A2 (fr)

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US20080064172A1 (en) 2008-03-13
EP1683187A2 (fr) 2006-07-26
US7122849B2 (en) 2006-10-17
ATE512465T1 (de) 2011-06-15
KR20070015499A (ko) 2007-02-05
WO2005050701A2 (fr) 2005-06-02
JP4843498B2 (ja) 2011-12-21
JP2007511909A (ja) 2007-05-10
EP1683187B1 (fr) 2011-06-08
CN1879227A (zh) 2006-12-13
CN100468785C (zh) 2009-03-11
WO2005050701A8 (fr) 2005-11-03
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Free format text: IN PCT GAZETTE 22/2005 UNDER (71) THE ADDRESS SHOULD READ "NEW ORCHARD ROAD ARMONK, NY 10504 (US)."

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