WO2005035823A1 - Complexe metallique comportant un ligand $g(b)-dicetonato, et procede de production d'une fine couche contenant un metal - Google Patents

Complexe metallique comportant un ligand $g(b)-dicetonato, et procede de production d'une fine couche contenant un metal Download PDF

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WO2005035823A1
WO2005035823A1 PCT/JP2004/015083 JP2004015083W WO2005035823A1 WO 2005035823 A1 WO2005035823 A1 WO 2005035823A1 JP 2004015083 W JP2004015083 W JP 2004015083W WO 2005035823 A1 WO2005035823 A1 WO 2005035823A1
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metal
thin film
complex
carbon atoms
group
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PCT/JP2004/015083
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English (en)
Japanese (ja)
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Takumi Kadota
Chihiro Hasegawa
Kouhei Watanuki
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Ube Industries, Ltd.
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Priority to JP2005514638A priority Critical patent/JPWO2005035823A1/ja
Publication of WO2005035823A1 publication Critical patent/WO2005035823A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages

Definitions

  • the present invention relates to a metal complex having a diketonato ligand and a method for producing a metal-containing thin film.
  • the present invention relates to a metal complex having a novel ⁇ -diketonato ligand and a metal complex such as a metal thin film or a metal oxide thin film formed by a chemical vapor deposition method (CVD method) using the metal complex.
  • the present invention relates to a method for producing a thin film.
  • a thin film of a noble metal such as ruthenium or iridium belonging to Group VIII metal or an oxide thin film thereof has been studied as a material for forming a thin film electrode of a semiconductor memory such as DRAM or FeRAM. This is because these noble metals have excellent electrical properties as electrode forming materials.
  • a thin film of noridium or nickel for improving the density of copper nucleation in copper wiring used for a silicon semiconductor and for improving the adhesion between the copper wiring and its base has been studied.
  • Patent Document 1 proposes a ruthenium complex of 2,2,6-trimethyl-3,5-heptanedione or 2,6-dimethyl-3,5-heptanedione, and an iridium complex. Although the complex has a relatively low melting point, the complex of V and deviation has a high melting point of 110 ° C. or more, which is a problem as a metal raw material used in the CVD method.
  • Patent Document 2 discloses that j8-diketone having a large number of carbon atoms and an alkyl group is used as a ligand. Ruthenium complexes have been proposed. Since this complex is liquid at room temperature, the problem of clogging the piping of CVD equipment can be solved, but the deposition rate of ruthenium film can be reduced by the conventional tris (2,2,6,6-tetramethyl-3,5 heptadionate). As with ruthenium complexes, the industrial productivity of ruthenium thin films remains problematic.
  • Patent Documents 3 and 4 disclose a tris (2,4-octanedionato) ruthenium complex (compound of the formula (I)) and a tris (2,4-ota A method for separating a cis-trans isomer of a (tandionato) iridium complex has been proposed.
  • ruthenium complex As for the ruthenium complex, a ruthenium complex of a cyclopentagel group different from the j8-diketonato group has been proposed.
  • Patent Documents 5-7 describe bis (ethylcyclopentagel) ruthenium complexes which are liquid at room temperature.
  • this ruthenium complex is an organic metal, it is sensitive to moisture, and the operation during synthesis and post-treatment is complicated.
  • a reduction reaction is required because the target bis (ethylcyclopentagenenyl) ruthenium complex is divalent. This poses a problem when considering mass production as an industrial production method, such as using zinc metal as a reducing agent.
  • Patent Document 8 describes an example of palladium thin film production using a bis (2,2,7-trimethyl-3,5-tactadionato) palladium complex in supercritical ethane instead of the CVD method. Reaction in supercritical ethane, not practical.
  • Non-Patent Document 1 describes production of a nickel thin film by a CVD method using a bis (cyclopentagenenyl) nickel complex. However, this complex is a solid (melting point: 173 ° C).
  • vanadium-containing thin film as a thin film material in the fields of semiconductors, electronic components, optical materials, and the like has been studied.
  • Methods for producing vanadium-containing thin films include coating pyrolysis, PVD, and CVD.However, in consideration of composition controllability and the tendency for device miniaturization in the future, the CVD method is easy to produce uniform thin films. Film formation is the preferred method, It is necessary to provide a suitable raw material.
  • a complex containing an alkoxide group is liable to undergo decomposition and deterioration due to the presence of a small amount of moisture, and has a problem that storage is difficult.
  • Patent Document 9 discloses that V (dpm) (where dpm is 2,2,6,6-tetramethyl 3,5-heptane
  • Thin films containing oxides of metal elements such as titanium, zirconium, and hafnium belonging to Group IVA of the periodic table have been studied as materials in the fields of semiconductors, electronic components, optical components, and the like.
  • hafnium oxide has been promoted as a gate insulating film of a transistor.
  • Methods for producing thin films containing these elements include coating pyrolysis, PVD, and CVD.However, in consideration of the composition controllability of film formation and the response to miniaturization of semiconductor devices, the CVD method is used. Is the most preferred method.
  • Patent Document 13 discloses that Hf (dpm) containing no alkoxide group (where dpm is 2, 2, 6, 6
  • Thin films containing metals such as boron, aluminum, gallium, and indium, which are metals belonging to Group III elements, or compounds thereof are being studied as materials in the fields of semiconductors, electronic components, optical components, and the like.
  • metals such as boron, aluminum, gallium, and indium
  • Methods for producing thin films containing these metals include the coating pyrolysis method, PVD method, and CVD method.However, considering the composition controllability of the thin film and the tendency for device miniaturization in the future, a uniform thin film can be produced. Easy! ⁇ Film formation by the CVD method is a preferable method, and it is necessary to provide a suitable raw material.
  • Alkali (dpm) complex is a solid with a melting point of 265 ° C.
  • Patent Documents 14 and 15 disclose an aluminum complex containing an alkoxide group in the molecule.However, the complex containing the alkoxide group is also degraded and deteriorated by the presence of a small amount of water. However, there is a problem with its preservability. Further, Patent Literature 16 proposes an alkylaluminum hydride. However, like the trialkylaluminum, this complex is severely deteriorated by a small amount of moisture or air, and is difficult to handle because of its ignitability.
  • Group III metals other than aluminum such as boron, gallium and indium
  • trialkyl metal complexes such as boron, gallium and indium
  • j8-diketonato complexes of these metals for example, tris (acetylacetonato) indium Complexes, such as In (dpm)
  • dpm In
  • tin and lead oxide thin films belonging to Group IVB metals are used in fields such as semiconductors and electronic components. Investigations are being made on materials such as transparent conductive thin films such as tin oxide and tin-doped indium oxide (ITO), BTS (barium, titanium, tin oxide), PZT (lead, zirconium, and titanium oxide). ), Etc.
  • a Group IVB metal oxide is used for the ferroelectric film.
  • Methods for producing thin films containing Group IVB metals include coating pyrolysis, PVD, and CVD.However, in consideration of composition controllability and future trends in device miniaturization, uniform thin films can be produced. The preferred method is to form a film by the easy CVD method, and it is necessary to provide a suitable raw material.
  • a ⁇ -diketonato metal complex As a raw material for producing a thin film containing a Group IVB metal element by a CVD method, a ⁇ -diketonato metal complex may be mentioned.
  • Sn (AcAc) (where Ac Ac is an acetyl-acetonato group
  • Patent Document 17 tetramethyltin having a Sn—C bond in which an alkyl group is directly bonded to Sn (denoted as Sn (CH 2)) is used as a raw material for producing a BTS thin film that is an oxide-based ferroelectric substance.
  • the resulting BTS film is inferior in characteristics. This is,
  • the Sn—C bond between Sn and the alkyl group has a strong covalent bond, so that the Sn—C bond is less likely to be decomposed than the Sn (dpm) complex having the Sn—O—C bond. .
  • Patent Document 21 j8-diketonato lead complexes, such as ru 1,3-propanedionato) lead.
  • Zinc-based composites are used as transparent conductive films such as solar cells and liquid crystal display devices, and as surface acoustic wave devices.
  • Compounds have been used and studied as thermistor elements, which take advantage of the fact that they have high resistance to temperature change and resistance change with temperature, and yttrium compounds as materials for copper oxide-based high-temperature superconductors. hand! /
  • thermistor elements which take advantage of the fact that they have high resistance to temperature change and resistance change with temperature
  • yttrium compounds as materials for copper oxide-based high-temperature superconductors.
  • Patent Document 24 The method (Patent Document 24) is known. However, since all zinc complexes are solid at room temperature and have a high melting point, there is a risk of clogging of the piping in the raw material supply system in the CVD apparatus during film formation by the CVD method. Not suitable as a raw material for thin film production.
  • Non-Patent Document 2 A method for producing a manganese oxide film by a CVD method using the above method is known (Non-Patent Document 2).
  • this manganese complex like the zinc complex, has a problem that it is solid at room temperature and has a high melting point.
  • Examples of the production of an yttrium-containing thin film using an yttrium complex include, for example, Y (tod)
  • Patent Document 25 A method of manufacturing an yttrium oxide film by a CVD method using No. 3 is known (Patent Document 25).
  • this yttrium complex like the zinc complex, is solid at room temperature and has a high V ⁇ melting point!
  • Chromium compounds for optical fiber lasers The use and study of magnesium compounds for the production of glass and the coating of steel sheet surfaces, and the use of magnesium compounds as protective films on dielectric glass layers of plasma display panels have been conducted. As a method of producing a thin film containing these metal atoms, a uniform thin film can be easily produced! The film formation by the cVD method is most actively employed, and a suitable raw material is required. I have.
  • 3 3 -Diketonato such as tramethyl-3,5-heptanedionato group), Mg (acac), Mg (dpm)
  • Cyclopentajenyl groups such as MgCp (Cp cyclopentagenenyl group) and ligands
  • An example of the production of a chromium-containing thin film using a chromium complex is a plasma using Cr (dpm).
  • Patent Document 28 A method of coating a steel sheet with chromium (Patent Document 28) is known.
  • Examples of the production of a magnesium-containing thin film using a magnesium complex include Mg (acac), Mg (dpm) and
  • Patent Documents 27 and 29 A known method is known (Patent Documents 27 and 29). However, since all metal complexes are solid at room temperature and have a high melting point, there is a risk of clogging of the piping in the raw material supply system in the CVD equipment during film formation by the CVD method. It is not suitable as a raw material for thin film production by the method.
  • a copper complex having ⁇ -diketonate having a silyl ether bond as a ligand is described in Patent Document 30.
  • Patent Document 1 JP-A-949081
  • Patent Document 2 JP-A-2000-212744
  • Patent Document 3 JP-A-2003-55294
  • Patent Document 4 JP 2003-64019 A
  • Patent Document 5 JP-A-11 35589
  • Patent Document 6 JP-A-2002-105091
  • Patent Document 7 JP-A-2003-55390
  • Patent Document 8 US Patent No. 5789027
  • Patent Document 9 JP-A-2003-49269
  • Patent Document 10 Japanese Patent Application Laid-Open No. 2001-200367
  • Patent Document 11 Japanese Patent Application Laid-Open No. 2002-69641
  • Patent Document 12 Japanese Patent Application Laid-Open No. 2002-69027
  • Patent Document 13 Japanese Patent Application Laid-Open No. 2002-249455
  • Patent Document 14 JP 2001-2142689 A
  • Patent Document 15 JP-A-2003-34868
  • Patent Document 16 JP-A-9-12581
  • Patent Document 17 JP-A-6-234779
  • Patent Document 18 JP-A-9-249973
  • Patent Document 19 JP-A-7-25886
  • Patent Document 20 JP-A-2002-155008
  • Patent Document 21 JP-A-2003-226664
  • Patent Document 22 JP-A-2000-273636
  • Patent Document 23 JP-A-2003-89875
  • Patent Document 24 JP 2003-31846 A
  • Patent Document 25 JP-A-9-228049
  • Patent Document 26 JP-A-6-92647
  • Patent Document 27 JP-A-11 3665
  • Patent Document 28 JP-A-2-66171
  • Patent Document 29 JP-A-10-269952
  • Patent Document 30 WO 03Z064437A1 Nonfret
  • Non-patent document 1 Electrochemical and Solid-State letters, 5 (6) C64- C66 (2002)
  • Non-patent document 2 J. Electrochemical Society, 142 (9), 3137 (1995)
  • the present invention relates to ruthenium, iridium, palladium, nickel, vanadium, titanium, zirconium, hafnium, aluminum, gallium, indium, tin, lead, zinc, manganese, yttrium, chromium, magnesium, cobalt, iron, and It is an object of the present invention to provide a novel complex of a metal atom selected from the group consisting of silver. In addition, because of its low melting point, excellent stability in air, and excellent film-forming properties, it is suitable for forming metal-containing thin films such as metal thin films or metal oxide thin films by CVD. The purpose is to provide
  • the present inventor has proposed a metal complex having ⁇ -diketonate having a silyl ether bond as a ligand.
  • the present invention was found to be a compound that solved the above-mentioned problems, and the present invention was completed.
  • the present invention provides a metal complex represented by the following formula (1):
  • X represents a silyl ether group represented by the following (2)
  • ⁇ represents a silyl ether group represented by the following (2) or a straight-chain or branched alkyl group having 118 carbon atoms;
  • ⁇ represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
  • n represents the valence of the metal atom represented by M (for example, 2, 3, 4);
  • R a represents a straight-chain or branched alkylene group having 115 carbon atoms
  • R b and RR d each independently represent Represents a straight-chain or branched alkyl group having 1 to 5 carbon atoms
  • the present invention also relates to a metal complex having a
  • X represents a silyl ether group represented by the following (2)
  • Y is a silyl ether group represented by the following (2) or a straight chain having 118 carbon atoms. Or a branched alkyl group,
  • Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
  • R a represents a linear or branched alkylene group having 115 carbon atoms
  • R b and RR d each independently represent Represents a straight or branched alkyl group having 1 to 5 carbon atoms
  • Y is a linear or branched alkyl group having 18 to 18 carbon atoms
  • Z is a hydrogen atom.
  • Y is a straight-chain or branched alkyl group having 14 to 14 carbon atoms
  • Ra is a dimethylmethylene group
  • R b and RR d are each a straight-chain or branched alkyl group having 13 to 13 carbon atoms. It is preferably an alkyl group.
  • the present invention also vaporizes a metal complex having the above-mentioned formula (1) or a metal complex having a ⁇ -diketonato group having a silyl ether group represented by the above-mentioned formula (3) as a ligand.
  • a method for producing a metal-containing thin film which comprises thermally decomposing the deposited metal complex and depositing it on a substrate to form a metal-containing thin film.
  • a metal oxide thin film can be formed on the substrate.
  • the metal complex of the present invention has excellent stability and a low melting point as compared with the conventionally known corresponding metal complex, and also has a high deposition rate of the metal-containing thin film. It is effective for industrial production of various metal-containing thin films.
  • ⁇ -diketones used as ligands of metal complexes and having a silyl ether group include the following compounds.
  • These diketones are obtained by reacting a silylated organic acid ester with a ketone in the presence of a base, adding an acid treatment to the product, and isolating the product by a purification means such as distillation or column chromatography.
  • a purification means such as distillation or column chromatography.
  • ⁇ It can be obtained by a conventionally known method for purification.
  • 8-diketone conjugate as a ligand can be obtained by a known method of reacting ⁇ -diketone with a salt of the metal in the presence of a base.
  • the metal complex obtained by the reaction can be purified by a column chromatography method or a distillation method.
  • the divalent metal ions eg, Ni 2+, Pd 2+, Sn Pb 2+, Zn Mg 2 +, Co 2+, Ag 2+
  • M 3+ Is a trivalent metal ion e.g., Lu 3+ , Ir 3+ , V 3+ , Al 3+ , B 3+ , Ga 3+ , In 3+ , Mn 3+ , Y 3+ , Cr 3+ , Fe 3+
  • M 4+ represents a tetravalent metal ion (eg, Hf 4+ , Zr 4+ , Ti 4+ ).
  • a method in which the complex is charged or transported into a chamber and vaporized, or these complexes are converted into a suitable solvent eg, an aliphatic hydrocarbon such as hexane, octane, methylcyclohexane, or ethylcyclohexane, an aromatic hydrocarbon such as toluene, Then, the solution diluted with tetrahydrofuran or ether such as dibutyl ether) is pumped by a liquid transfer pump.
  • a suitable solvent eg, an aliphatic hydrocarbon such as hexane, octane, methylcyclohexane, or ethylcyclohexane, an aromatic hydrocarbon such as toluene
  • the solution diluted with tetrahydrofuran or ether such as dibutyl ether
  • a so-called solution method in which the gas is introduced into a vaporization chamber and vaporized can be used.
  • a known CVD method can be used for the vapor deposition on the substrate. That is, the metal complex vapor of the present invention is contact pyrolyzed with a heated substrate under a reduced pressure or in the presence of an inert gas to deposit a metal thin film, or the metal complex vapor is present in the presence of a reducing gas such as hydrogen.
  • a method of depositing the metal-containing thin film by a plasma CVD method can also be used.
  • the following conditions can be mentioned as vapor deposition conditions when a metal-containing thin film is formed by vapor deposition using the metal complex containing a ⁇ -diketonato ligand having a silyl ether group of the present invention.
  • the pressure in the reaction system is preferably lPa-200 kPa, more preferably lOPa-11 OkPa
  • the substrate temperature is preferably 50-700 ° C, more preferably 100-500 ° C
  • the vaporization temperature of the metal complex Is preferably 50-250 ° C, more preferably 90-200 ° C.
  • the content of the oxidizing gas in the formation of the metal oxidized thin film using an oxidizing gas such as oxygen is preferably 10 to 90% by volume, more preferably 20 to 90% by volume. — 70% by volume.
  • a reducing gas such as hydrogen
  • the content ratio of the reducing gas to the total gas amount is preferably 10 to 95% by volume, more preferably 30 to 90% by volume.
  • a nitrogen-containing basic gas such as ammonia
  • the content ratio of the nitrogen-containing basic gas to the total gas amount is preferably 10 to 95% by volume, and more preferably 20 to 90% by volume.
  • the obtained i-danied product was identified by IR analysis, elemental analysis, and MS analysis.
  • the apparatus shown in FIG. 1 was used for the vapor deposition test.
  • the Ru (sopd) complex 20 in the vaporizer 3 (glass ampoule) is heated by the heater 10B and vaporized, and the mass flow controller 1A
  • the gas After passing through the helium gas introduced after preheating in the preheater 10A, the gas leaves the vaporizer and is introduced into the reactor 4.
  • the pressure in the reaction system is controlled to a predetermined pressure by opening and closing a valve 6 in front of a vacuum pump, and monitored by a pressure gauge 5.
  • the center of the glass reactor has a structure that can be heated with a heater at 10C.
  • the thermal decomposition is performed on the surface of the substrate 21 to be deposited, which is set at the center of the reactor and heated to a predetermined temperature by the heater 10C, and ruthenium metal is deposited on the substrate 21.
  • the gas exiting the reactor 4 is exhausted into the atmosphere via a trap 7 and a vacuum pump.
  • As the substrate 21 to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • Ni (sopd) complex obtained in Example 4 was subjected to a CVD method using the apparatus shown in FIG.
  • Vaporizer 3 is filled with Ni (sopd) complex and converted to helium gas.
  • Example 7 Using the vanadium complex obtained in Example 7, a deposition test was performed by a CVD method to evaluate film formation characteristics.
  • the apparatus shown in Fig. 1 was used for the evaluation test.
  • the vanadium complex 20 placed in the vaporizer 3 (glass ampule) is heated by the heater 10B and vaporized, and the mass flow controller 1A After passing through the preheater 10A, the gas leaves the vaporizer accompanying the helium gas introduced after preheating.
  • the gas exiting the vaporizer 3 is introduced into the reactor 4 together with the oxygen gas introduced via the mass flow controller 1B and the stop valve 2.
  • the pressure in the reaction system is controlled to a predetermined pressure by opening and closing a valve 6 in front of a vacuum pump, and monitored by a pressure gauge 5.
  • the central part of the glass reactor has a structure that can be heated by a heater 10C.
  • the vanadium complex introduced into the reactor is oxidized and thermally decomposed on the surface of the substrate 21 to be deposited, which is set in the center of the reactor and heated to a predetermined temperature by the heater 10C, and a vanadium oxide film is formed on the substrate 21. Precipitates.
  • the gas exiting the reactor 4 is exhausted into the atmosphere via a trap 7 and a vacuum pump.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • the obtained i-danied product was identified by IR analysis, elemental analysis, and MS analysis.
  • the method was performed by the method described in 8, and the film formation characteristics were evaluated.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • the obtained i-danied product was identified by IR analysis, elemental analysis, and MS analysis.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • the use of the indium complex of the present invention as a raw material contributes to the ability to form a uniform indium oxide thin film.
  • Substrate SiO / Si Substrate temperature: 350 ° C
  • the obtained i-danied product was identified by IR analysis, elemental analysis, and MS analysis.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • Bis (2,6-dimethyl-2-trimethylsilyloxy 3,5-heptanedionato) zinc (II) is a novel compound having the following physical properties.
  • Tris (2,6-dimethyl-2-trimethylsilyloxy 3,5-heptanedionato) manganese (III) is a novel compound having the following physical properties.
  • Tris (2,6-dimethyl-2-trimethylsilyloxy 3,5-heptanedionato) yttrium (III) is a novel compound having the following physical properties.
  • Example 8 The test was performed by the method described in Example 8 to evaluate the film forming characteristics.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • As the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • the use of the zinc complex of the present invention as a raw material contributes to the formation of a uniform zinc oxide thin film.
  • Tris (2,6-dimethyl-2-trimethylsilyloxy 3,5-heptanedionato) manganese (III) is a novel compound having the following physical properties.
  • Bis (2,6-dimethyl-2-trimethylsilyloxy-3,5-heptanedionato) magnesium (II) is a novel compound having the following physical properties.
  • the method was performed according to the method, and the film forming characteristics were evaluated.
  • the deposition conditions and the characteristics of the deposited film are shown below.
  • As the substrate to be deposited a rectangular substrate having a size of 7 mm ⁇ 40 mm was used.
  • the use of the magnesium complex of the present invention as a raw material contributes to the ability to form a uniform magnesium oxide thin film.
  • FIG. 1 is a diagram showing a configuration of a vapor deposition device.

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Abstract

L'invention concerne un nouveau complexe métallique β-dicétonato qui peut être utilisé de manière avantageuse dans un procédé au cours duquel une fine couche de métal est produite par dépôt chimique en phase vapeur (CVD). Le complexe métallique selon l'invention est représenté par la formule (I), dans laquelle : X désigne un groupe éther silyle présentant une structure spécifique ; Y représente ledit groupe éther silyle ou un groupe alkyle ; Z représente un atome d'hydrogène ou un groupe alkyle ; M représente Lu, Ir, Pd, Ni, V, Ti, Zr, Hf, Al, Ga, In, Sn, Pb, Zn, Mn, It, Cr, Mg, Co, Fe ou Ag ; et n représente la valeur de l'atome de métal M.
PCT/JP2004/015083 2003-10-14 2004-10-13 Complexe metallique comportant un ligand $g(b)-dicetonato, et procede de production d'une fine couche contenant un metal WO2005035823A1 (fr)

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Cited By (7)

* Cited by examiner, † Cited by third party
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JP2008200558A (ja) * 2007-02-16 2008-09-04 National Institute Of Advanced Industrial & Technology 化学気相析出法を用いた水素透過膜製造装置
JP2011023706A (ja) * 2009-06-17 2011-02-03 Tokyo Electron Ltd 金属酸化物膜の形成方法及び成膜装置
JP2011241396A (ja) * 2010-05-18 2011-12-01 Rohm & Haas Electronic Materials Llc セレン／第３ａ族インク、並びにその製造方法および使用方法
WO2014118750A1 (fr) * 2013-01-31 2014-08-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Composés contenant du manganèse, leur synthèse et utilisation dans un dépôt de film contenant du manganèse
JP2019053043A (ja) * 2017-07-27 2019-04-04 公立大学法人大阪市立大学 近赤外分光法プローブ、及び当該プローブを用いた近赤外光法解析方法
WO2022145267A1 (fr) * 2020-12-28 2022-07-07 株式会社Adeka Matériau de départ de formation d'un film mince pour dépôt de couche atomique, procédé de production de films minces, et composé d'aluminium
WO2023199853A1 (fr) * 2022-04-15 2023-10-19 東ソー株式会社 Complexe de ruthénium, son procédé de production et procédé de production d'un film mince contenant du ruthénium

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JP2008200558A (ja) * 2007-02-16 2008-09-04 National Institute Of Advanced Industrial & Technology 化学気相析出法を用いた水素透過膜製造装置
JP2011023706A (ja) * 2009-06-17 2011-02-03 Tokyo Electron Ltd 金属酸化物膜の形成方法及び成膜装置
JP2011241396A (ja) * 2010-05-18 2011-12-01 Rohm & Haas Electronic Materials Llc セレン／第３ａ族インク、並びにその製造方法および使用方法
WO2014118750A1 (fr) * 2013-01-31 2014-08-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Composés contenant du manganèse, leur synthèse et utilisation dans un dépôt de film contenant du manganèse
JP2019053043A (ja) * 2017-07-27 2019-04-04 公立大学法人大阪市立大学 近赤外分光法プローブ、及び当該プローブを用いた近赤外光法解析方法
JP7209997B2 (ja) 2017-07-27 2023-01-23 公立大学法人大阪 近赤外分光法プローブ、及び当該プローブを用いた近赤外光法解析方法
WO2022145267A1 (fr) * 2020-12-28 2022-07-07 株式会社Adeka Matériau de départ de formation d'un film mince pour dépôt de couche atomique, procédé de production de films minces, et composé d'aluminium
WO2023199853A1 (fr) * 2022-04-15 2023-10-19 東ソー株式会社 Complexe de ruthénium, son procédé de production et procédé de production d'un film mince contenant du ruthénium

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