EP1313744A4 - Compositions de reactif de source et procede pour former des films metalliques sur un substrat par depot chimique en phase vapeur - Google Patents

Compositions de reactif de source et procede pour former des films metalliques sur un substrat par depot chimique en phase vapeur

Info

Publication number
EP1313744A4
EP1313744A4 EP01964374A EP01964374A EP1313744A4 EP 1313744 A4 EP1313744 A4 EP 1313744A4 EP 01964374 A EP01964374 A EP 01964374A EP 01964374 A EP01964374 A EP 01964374A EP 1313744 A4 EP1313744 A4 EP 1313744A4
Authority
EP
European Patent Office
Prior art keywords
substrate
vapor deposition
chemical vapor
metal films
forming metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01964374A
Other languages
German (de)
English (en)
Other versions
EP1313744A1 (fr
Inventor
Robin A Gardiner
Peter S Kirlin
Thomas H Baum
Douglas Gordon
Timothy E Glassman
Sofia Pombrik
Brian A Vaartstra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/649,549 external-priority patent/US7323581B1/en
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of EP1313744A1 publication Critical patent/EP1313744A1/fr
Publication of EP1313744A4 publication Critical patent/EP1313744A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic Table compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0033—Iridium compounds
    • C07F15/004—Iridium compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/069—Aluminium compounds without C-aluminium linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005—Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
EP01964374A 2000-08-28 2001-08-23 Compositions de reactif de source et procede pour former des films metalliques sur un substrat par depot chimique en phase vapeur Withdrawn EP1313744A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/649,549 US7323581B1 (en) 1990-07-06 2000-08-28 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US649549 2000-08-28
PCT/US2001/026339 WO2002018394A1 (fr) 2000-08-28 2001-08-23 Compositions de reactif de source et procede pour former des films metalliques sur un substrat par depot chimique en phase vapeur

Publications (2)

Publication Number Publication Date
EP1313744A1 EP1313744A1 (fr) 2003-05-28
EP1313744A4 true EP1313744A4 (fr) 2004-03-31

Family

ID=24605280

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01964374A Withdrawn EP1313744A4 (fr) 2000-08-28 2001-08-23 Compositions de reactif de source et procede pour former des films metalliques sur un substrat par depot chimique en phase vapeur

Country Status (4)

Country Link
EP (1) EP1313744A4 (fr)
JP (1) JP2004507551A (fr)
AU (1) AU2001285235A1 (fr)
WO (1) WO2002018394A1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005035823A1 (fr) * 2003-10-14 2005-04-21 Ube Industries, Ltd. Complexe metallique comportant un ligand $g(b)-dicetonato, et procede de production d'une fine couche contenant un metal
US7947814B2 (en) 2006-04-25 2011-05-24 Air Products And Chemicals, Inc. Metal complexes of polydentate beta-ketoiminates
WO2007140813A1 (fr) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de formation de films à constante diélectrique élevée à base de nouveaux précurseurs de titane, de zirconium et d'hafnium et utilisation desdits films pour la fabrication de semi-conducteurs
US7691984B2 (en) 2007-11-27 2010-04-06 Air Products And Chemicals, Inc. Metal complexes of tridentate β-ketoiminates
EP2257561B1 (fr) 2008-02-27 2017-11-08 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Procédé de formation d'une couche à teneur en titane sur un substrat à l'aide d'un procédé de déposition en couches atomiques (ald)
US8471049B2 (en) * 2008-12-10 2013-06-25 Air Product And Chemicals, Inc. Precursors for depositing group 4 metal-containing films
US8507704B2 (en) 2009-09-08 2013-08-13 Air Products And Chemicals, Inc. Liquid composition containing aminoether for deposition of metal-containing films
US9079923B2 (en) 2010-08-05 2015-07-14 Air Products And Chemicals, Inc. Multidentate ketoimine ligands for metal complexes
US8617305B2 (en) 2011-01-25 2013-12-31 Air Products And Chemicals, Inc. Metal complexes for metal-containing film deposition
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9499571B2 (en) 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
CN107923039B (zh) 2015-05-27 2021-06-29 Asm Ip 控股有限公司 用于含钼或钨薄膜的ald的前体的合成和用途
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10358407B2 (en) 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
US20230092935A1 (en) 2019-09-11 2023-03-23 Credoxys GmbH Cerium (iv) complexes and their use in organic electronics
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
TW202136571A (zh) 2020-02-10 2021-10-01 荷蘭商Ａｓｍ Ｉｐ 控股公司 高深寬比孔內的氧化鉿之沉積
WO2022189431A1 (fr) 2021-03-10 2022-09-15 Credoxys GmbH Nouveaux complexes de cérium (iv) et leur utilisation dans l'électronique organique

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501602A (en) * 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
WO1996008587A1 (fr) * 1994-09-16 1996-03-21 Advanced Technology Materials, Inc. Reactifs a base de tantale et de niobium utilises pour des procedes de depot en phase gazeuse par procede chimique, et procede de depot de revetements les utilisant
WO1996040690A1 (fr) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Reactifs a base de complexes metalliques pour depot en phase gazeuse par procede chimique
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
WO1999000530A1 (fr) * 1997-06-26 1999-01-07 Advanced Technology Materials, Inc. Procede de depot chimique en phase vapeur basse temperature servant a former de minces films de ceramique contenant du bismuth utiles dans des dispositifs a memoires ferroelectriques
WO1999027030A1 (fr) * 1997-11-20 1999-06-03 Advanced Technology Materials, Inc. Compositions de solvant alcane/polyamine pour procede de depot chimique en phase vapeur avec apport de liquide

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JPS5874693A (ja) * 1981-10-29 1983-05-06 Nippon Soda Co Ltd 複合オキシアルコキシド誘導体及びその製造法
JPS59168678A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 反射防止膜形成用組成物
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
JPH06272042A (ja) * 1993-03-17 1994-09-27 Kawasaki Steel Corp 薄膜形成方法
WO1998051837A2 (fr) * 1997-05-14 1998-11-19 Secretary Of State For Defence Acting Through His Defence Evaluation And Research Agency Precurseurs utilises dans les techniques de depot chimique en phase vapeur
JP4104713B2 (ja) * 1998-01-09 2008-06-18 東京応化工業株式会社 チタン錯体及びその合成方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501602A (en) * 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
WO1996008587A1 (fr) * 1994-09-16 1996-03-21 Advanced Technology Materials, Inc. Reactifs a base de tantale et de niobium utilises pour des procedes de depot en phase gazeuse par procede chimique, et procede de depot de revetements les utilisant
WO1996040690A1 (fr) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Reactifs a base de complexes metalliques pour depot en phase gazeuse par procede chimique
WO1999000530A1 (fr) * 1997-06-26 1999-01-07 Advanced Technology Materials, Inc. Procede de depot chimique en phase vapeur basse temperature servant a former de minces films de ceramique contenant du bismuth utiles dans des dispositifs a memoires ferroelectriques
WO1999027030A1 (fr) * 1997-11-20 1999-06-03 Advanced Technology Materials, Inc. Compositions de solvant alcane/polyamine pour procede de depot chimique en phase vapeur avec apport de liquide

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JONES, ANTHONY C. ET AL: "Metal-organic chemical vapour deposition of lead scandium tantalate: chemical issues and precursor selection", POLYHEDRON (2000), 19(3), 351-355, XP002268230 *
See also references of WO0218394A1 *

Also Published As

Publication number Publication date
WO2002018394A1 (fr) 2002-03-07
AU2001285235A1 (en) 2002-03-13
JP2004507551A (ja) 2004-03-11
EP1313744A1 (fr) 2003-05-28

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Inventor name: VAARTSTRA, BRIAN, A.

Inventor name: POMBRIK, SOFIA

Inventor name: GLASSMAN, TIMOTHY, E.

Inventor name: GORDON, DOUGLAS

Inventor name: BAUM, THOMAS, H.

Inventor name: KIRLIN, PETER, S.

Inventor name: GARDINER, ROBIN, A.

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