WO2005010959A1 - 現像処理装置及び現像処理方法 - Google Patents
現像処理装置及び現像処理方法 Download PDFInfo
- Publication number
- WO2005010959A1 WO2005010959A1 PCT/JP2004/010112 JP2004010112W WO2005010959A1 WO 2005010959 A1 WO2005010959 A1 WO 2005010959A1 JP 2004010112 W JP2004010112 W JP 2004010112W WO 2005010959 A1 WO2005010959 A1 WO 2005010959A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- porous plate
- developing solution
- developer
- housing
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/027—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0254—Coating heads with slot-shaped outlet
Definitions
- the present invention relates to a substrate development processing apparatus and a substrate development processing method.
- a resist solution is applied to a wafer surface to form a resist film, and a wafer is exposed to a predetermined pattern of light to expose the wafer.
- a developing solution is supplied to the wafer after processing and exposure, and developing processing is performed to develop the wafer.
- the above-described development processing is usually performed in a development processing apparatus, and the development processing apparatus is provided with a developer discharge nozzle having a slit-shaped discharge port longer than the diameter of the wafer.
- the developing solution is supplied to the wafer in the developing process by moving the developing solution discharge nozzle from one end to the other end of the wafer while discharging the developing solution from the discharge port. ing.
- the developing solution reacts with a predetermined portion of the resist film, for example, the exposed portion, to develop the wafer.
- Patent Document 1 JP 2003-100589 A
- the present invention has been made in view of the power, and has been developed in order to prevent air bubbles from being mixed in the developer, to reduce the time required for the developer to flow on a substrate such as a wafer, and to prevent the developer from flowing on a substrate such as a wafer. It is an object of the present invention to provide a developing apparatus and a developing method capable of supplying a developing solution to a substrate.
- the present invention relates to a developing apparatus for developing a substrate, comprising: a substrate holding member for horizontally holding the substrate; and a substrate holding member provided above the substrate held by the substrate holding member.
- a housing that is disposed and forms a negative pressure chamber therein, a developer discharge nozzle that is provided in the housing and that discharges a developer, and moves the developer discharge nozzle in the housing.
- a nozzle moving mechanism A discharge port is formed on a lower surface of the developer discharge nozzle over a distance longer than a dimension in one direction of the substrate. The nozzle moving mechanism moves the developer discharge nozzle in one direction of the substrate.
- the housing can be moved at least a distance longer than the size of the substrate in the direction orthogonal to the substrate, and the lower surface of the housing is formed of a porous plate through which a developer can pass.
- the discharge port is close to the upper surface of the porous plate, and the developer discharged from the discharge port is supplied to the substrate through the porous plate.
- proximity includes not only the case where the gap is approached with a gap but also the case where the discharge port of the developer discharge nozzle is in contact with the porous plate.
- the developer is discharged from the discharge port toward the porous plate while the developer discharge nozzle moves in the housing, and the developer is supplied to the substrate through the porous plate.
- the developing solution passes through the porous plate, the flow rate of the developing solution is sufficiently reduced, and the developing solution is supplied onto the substrate after the speed direction is dispersed.
- the developer The development of the substrate that does not flow thereon is performed evenly in the substrate plane.
- the developing solution discharge nozzle moves on the porous plate, the developer is continuously supplied from the porous plate onto the substrate without interruption, so that bubbles are not mixed into the developer.
- the moving speed of the liquid discharge nozzle can be increased. Therefore, development of the substrate can be performed in a short time.
- a negative pressure chamber can be formed in the housing, for example, the developer is contained in the porous plate while the housing is kept under negative pressure, so that the developer does not drip from the porous plate. That can be S.
- the developing solution in the porous plate By discharging the developing solution from the upper developing solution discharge nozzle to the porous plate containing the developing solution, the developing solution in the porous plate can be pushed out to the lower substrate side. In this case, since the developer is immediately pushed out from the lower surface of the porous plate to the substrate by discharging the developer from the discharge port, the supply of the developer can be performed in a short time. In addition, it is possible to prevent the developer in the porous plate from dripping to the substrate side by setting the inside of the housing to a negative pressure. Furthermore, since the developing solution can be spread by sandwiching the developing solution between the porous plate and the substrate surface, even if the surface of the substrate is hydrophobic or the amount of the developing solution is small, the developing solution can be spread. The developer can be spread over the entire surface. Therefore, the consumption of the developing solution can be reduced, and appropriate development can be performed on any substrate.
- the porous plate of the housing may be formed in a rectangular shape that is at least larger than the substrate when viewed from a plane.
- the development processing device may further include a housing elevating / lowering drive unit that moves the housing up and down. By using the housing lifting drive, the distance between the porous plate on the lower surface of the housing and the substrate can be adjusted, and the amount of developer supplied to the substrate can be strictly controlled. As a result, appropriate development can be performed with the minimum necessary amount of developer.
- the nozzle moving mechanism may be provided in the housing. In this case, since the nozzle moving mechanism is inside the housing, it is easy to close the inside of the housing and apply a negative pressure to the inside of the housing.
- the development processing apparatus further includes a receiving member provided outside the substrate held by the substrate holding member and receiving a developing solution that falls outside the substrate on the same plane as the substrate. You may. If the developer falling outside the substrate falls below the substrate without being caught, the developer near the end of the substrate connected to the falling developer is also dragged by the falling developer and the substrate drops. Spills from the end of the. As in the present invention, By catching the developer falling on the outside of the plate on the same plane as the substrate, the flow of the developer near the edge of the substrate is prevented, and the development near the edge of the substrate is the same as that on other substrates. It can be performed.
- the outer shape of the receiving member is formed in a rectangular shape that is at least larger than the porous plate when viewed from above, and an opening slightly larger than the substrate when viewed from above is provided near the center of the receiving member. It may be formed. In this case, by disposing the substrate in the opening of the receiving member, it is possible to receive the developer falling outside the substrate on the same plane as the substrate.
- the development processing device may further include a receiving member lifting / lowering drive unit that moves the receiving member up and down. In such a case, the receiving member is appropriately retracted from the same plane of the substrate to prevent the developer scattered from the substrate due to the rotation of the substrate during washing, for example, from colliding with the receiving member and causing a partition.
- the discharge port of the developer discharge nozzle is formed at the lower end surface of the developer discharge nozzle, and a horizontal portion in contact with the porous plate is formed around the discharge port at the lower end surface of the developer discharge nozzle. It may be formed.
- the horizontal portion around the discharge port prevents the developer discharged from the discharge port from leaking into the housing from between the lower end surface of the developer discharge nozzle and the porous plate. Therefore, the developing solution from the discharge port surely flows into the porous plate, and the wasteful developing solution is reduced, thereby saving the developing solution.
- a plurality of developer discharge nozzles may be provided in the housing.
- the developer can be supplied by a plurality of developer discharge nozzles, so that the developer can be supplied in a shorter time.
- the porous plate may be formed such that the pore diameter decreases as approaching from the upper surface to the lower surface of the porous plate.
- the porosity decreases toward the bottom of the porous plate, the speed of the developer is gradually reduced in the porous plate, and the speed drops sufficiently, and after the direction of the speed is sufficiently diffused, And a developer can be supplied onto the substrate.
- a development processing method of the present invention is a development processing method for developing a substrate using a development processing apparatus.
- the development processing apparatus has the following configuration.
- a developing solution discharge nozzle for discharging a developing solution provided in the housing
- a nozzle moving mechanism for moving the developing solution discharge nozzle in the housing; and forming a discharge outlet on a lower surface of the developing solution discharge nozzle over a distance longer than a dimension in one direction of the substrate.
- the nozzle moving mechanism can move the developing solution discharge nozzle in a direction orthogonal to one direction of the substrate by at least a distance longer than a dimension of the substrate. Formed by a porous plate through which liquid can pass,
- the discharge port of the developer discharge nozzle is close to the upper surface of the porous plate, and the developer discharged from the discharge port is supplied to the substrate through the porous plate.
- the developing method of the present invention uses the developing apparatus having the above-described configuration to reduce the pressure in the negative pressure chamber to be lower than that of the outside of the housing and to include a developer in the porous plate. Bringing the porous plate of the housing close to the surface of the substrate;
- the developing solution is discharged from the discharge port of the developing solution discharging nozzle toward the porous plate, and the developing solution discharging nozzle in a state where the developing solution is discharged is moved along the porous plate. Supplying a developing solution to the substrate through the porous plate.
- the developer in the porous plate since the developer is contained in the porous plate in advance, when the developer is discharged from the discharge port to the porous plate in a later step, the developer in the porous plate is removed. It is extruded immediately and the developer can be supplied to the substrate quickly. Since the pressure in the negative pressure chamber is negative, the developer in the porous plate can be prevented from dripping on the substrate.
- the developing solution supply step the developing solution is supplied to the substrate through the porous plate, so that the speed of the developing solution in the porous plate is sufficiently reduced. As a result, the developer is supplied onto the substrate at an extremely low speed, and the flow of the developer on the substrate can be prevented.
- a continuous stream of the developer is supplied onto the substrate, so that bubbles are contained in the developer. Can be prevented from being mixed.
- the substrate may be developed with a developer interposed between the porous plate and the substrate.
- the developer since the state in which the developer is spread in the gap between the porous plate and the substrate is maintained, the developer can be surely brought into contact with the entire surface of the substrate. Therefore, the development of the substrate can be appropriately performed on the entire surface of the substrate.
- the amount of the developing solution supplied to the substrate may be set by the gap between the porous plate and the substrate at the time of supplying the developing solution. In such a case, the supply amount of the developing solution to the substrate can be easily controlled.
- the developer since the developer does not flow on the substrate, development is performed uniformly and stably on the substrate surface, and the yield is improved. Even if the developer discharge nozzle is moved at a high speed, no bubbles are mixed into the developer, so that the development processing time can be shortened and the throughput can be improved.
- FIG. 1 is a plan view schematically showing a configuration of a coating and developing system equipped with a developing apparatus according to an embodiment of the present invention.
- FIG. 2 is a front view of the coating and developing system of FIG. 1.
- FIG. 3 is a rear view of the coating and developing processing system of FIG. 1.
- FIG. 4 is an explanatory view of a longitudinal section showing a configuration of a developing apparatus.
- FIG. 5 is an explanatory view of a cross section showing a configuration of a developing device.
- FIG. 6 is a perspective view of a developer discharge nozzle.
- FIG. 7 is a plan view of a receiving plate.
- FIG. 8 is an explanatory view of a vertical cross section of a housing showing a state at the start of discharge of a developer.
- FIG. 9 is an explanatory view of a longitudinal section of a housing showing a state at the time of discharging a developing solution.
- FIG. 10 is an explanatory view of a vertical section of a housing showing a state at the time of termination of discharge of a developer.
- FIG. 11 is an explanatory view showing a configuration of a developer discharge nozzle having a flat lower surface.
- FIG. 12 is an explanatory view of a longitudinal section showing a configuration of a housing provided with two developer discharging nozzles.
- FIG. 13 is an explanatory diagram showing a configuration of a porous plate having a three-layer structure.
- FIG. 1 is a plan view schematically showing the configuration of a coating and developing system 1 equipped with the developing apparatus according to the present embodiment
- FIG. 2 is a front view of the coating and developing system 1.
- 3 is a rear view of the coating and developing system 1.
- the coating and developing system 1 carries, for example, 25 wafers W into and out of the coating and developing system 1 from the outside in a cassette unit and the wafer C from the cassette C.
- a cassette station 2 for loading and unloading W a processing station 3 in which various processing devices for performing predetermined processing in a single-wafer manner in the coating and developing process are arranged, and a processing station 3 adjacent to this processing station 3. It has a configuration in which an interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) provided is integrally connected.
- a plurality of cassettes C can be mounted at predetermined positions on a cassette mounting table 5 serving as a mounting portion in a line in the X direction (the vertical direction in FIG. 1).
- the wafer carrier 7 that can be moved in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W stored in the cassette C (Z direction; vertical direction) is movable along the transfer path 8. , So that each cassette C can be selectively accessed.
- the wafer carrier 7 has an alignment function for aligning the position of the wafer W.
- This wafer carrier 7 belongs to a third processing unit group G3 on the processing station 3 side as described later.
- the configuration is such that the user can also access the extension device 32 to be used.
- a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group.
- this coating and developing system 1 four processing unit groups Gl, G2, G3 and G4 are arranged, and the first and second processing unit groups Gl and G2 are located on the front side of the coating and developing system 1.
- the third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4.
- a fifth processing unit group G5 indicated by a broken line as an option can be separately arranged on the back side.
- the main transfer device 13 is capable of carrying in and out the wafers W to and from various processing devices described later arranged in these processing device groups Gl, G2, G3, G4, G5.
- the number and arrangement of the processing equipment groups differ depending on the type of processing performed on the wafer W, and can be arbitrarily selected.
- a resist coating device 17 for applying a resist solution to the wafer W to form a resist film on the wafer W for example, as shown in FIG. 2, a resist coating device 17 for applying a resist solution to the wafer W to form a resist film on the wafer W, and a current processing device according to the present embodiment.
- the image processing devices 18 are arranged in two stages from the bottom.
- a resist coating unit 19 and a development processing unit 20 are also arranged in two stages from the bottom.
- a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, An extension device 32 for delivery, a pre-baking device 33, 34 for evaporating the solvent in the resist solution, and a post-baking device 35 for heating after the development process are, for example, 6 stages from the bottom. Are stacked.
- a cooling device 40 for example, a cooling device 40, an extension for naturally cooling the placed wafer W, a cooling device 41, an extension device 42, a cooling device 43, and a post for performing a heating process after exposure.
- Exposure baking devices 44 and 45 and a post baking device 46 are stacked, for example, in seven stages from the bottom.
- a wafer carrier 50 is provided as shown in Fig. 1.
- the wafer carrier 50 is configured to freely move in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and the ⁇ direction (rotation direction about the Z axis).
- the extension unit belonging to the fourth processing unit group G4 has access to the cooling device 41, the etastation device 42, the peripheral exposure device 51, and the exposure device (not shown) so that the wafer W can be transferred to each of them. It is configured.
- a spin chuck 60 as a substrate holding member for holding the wafer W is provided at a central portion in the casing 18a of the developing device 18.
- the spin chuck 60 has a horizontal upper surface, and on the upper surface, for example, a suction port (not shown) for sucking the wafer W is provided. The suction from the suction port allows the spin chuck 60 to horizontally hold the wafer W by suction.
- the spin chuck 60 is provided with, for example, a chuck drive mechanism 61 for rotating and moving the spin chuck 60 up and down.
- the chuck driving mechanism 61 includes, for example, a rotary driving unit (not shown) such as a motor for rotating the spin chuck 60 at a predetermined speed around a vertical axis, and a motor or a cylinder for raising and lowering the spin chuck 60 for a predetermined distance. (Not shown).
- the chuck driving mechanism 61 can raise and lower the wafer W when loading and unloading the wafer W, and rotate the wafer W when cleaning the wafer W, for example.
- a cup 62 for receiving and collecting the liquid scattered or dropped by the force of the wafer W.
- the cup 62 surrounds, for example, the side of the spin chuck 60 and mainly receives the liquid scattered to the outside of the wafer W.
- the side wall 63 covers the lower part of the wafer W, and mainly covers the liquid falling from the wafer W. It has a separate bottom 64 for receiving.
- the side wall portion 63 is formed, for example, as shown in FIG. As shown in FIG. 4, the side wall 63 can be moved up and down by a lift drive unit 65 such as a cylinder.
- a spin chuck 60 penetrates the bottom 64 at the center.
- Around the spin chuck 60 there is provided an annular member 66 for blocking the flow of the liquid wrapping around from the front surface to the rear surface.
- the annular member 66 has, for example, a top portion close to the back surface of the wafer W, and blocks the flow of the liquid at the top portion.
- a discharge pipe 67 is connected to the bottom 64, and the liquid collected in the cup 62 can be discharged from the discharge pipe 67 to the outside of the developing device 18.
- a housing 70 having a substantially rectangular parallelepiped outer shape is arranged above the spin chuck 60.
- the housing 70 is configured to be hermetically sealed, and a negative pressure chamber S is formed in the housing 70.
- the housing 70 is formed to be larger than the wafer W when viewed from above, and the lower surface of the housing 70 faces the wafer W held by the spin chuck 60 and covers the upper surface of the wafer W.
- the lower surface of the housing 70 is formed of a porous plate 71 through which liquid can flow.
- the material of the porous plate 71 is, for example, a resin such as Teflon (registered trademark of DuPont) or PP (polypropylene) or a metal such as stainless steel, alumina, titanium, or glass fiber, and has a porosity of 50% to 50%. They have a pore size of about 0.01-0.5 mm.
- the thickness of the porous plate 71 is set to, for example, about 0.5-5 mm.
- a developer discharge nozzle 72 is provided in the housing 70 and on the porous plate 71.
- the developer discharge nozzle 72 has an elongated shape longer than the diameter of the wafer W in, for example, the X direction (the vertical direction in FIG. 5), and has a lower end surface as shown in FIG.
- a slit-like discharge port 73 is formed along the longitudinal direction. As shown in FIG. 4, the discharge port 73 is close to the upper surface of the porous plate 71.
- a developer supply pipe 75 communicating with a developer supply source 74 installed outside the image processing apparatus 18 is connected to an upper portion of the developer discharge nozzle 72. The developer supplied from the developer supply source 74 to the developer discharge nozzle 72 through the developer supply pipe 75 passes through the inside of the developer discharge nozzle 72 and is discharged into the porous plate 71 from the discharge port 73. .
- a nozzle moving mechanism 80 for moving the developing solution discharge nozzle 72 is mounted on the upper surface inside the housing 70.
- the nozzle moving mechanism 80 includes, for example, a renole 81 formed in a Y direction (horizontal direction in FIG. 4) orthogonal to a slit direction of the discharge port 73 (X direction: a depth direction in FIG. 4), and a developer discharge nozzle.
- a nozzle drive unit 82 for moving 72 along the rail 81 is provided.
- the rail 81 is formed, for example, from the vicinity of one end in the Y direction in the housing 70 to the vicinity of the other end. Therefore, the developer discharge nozzle 72 can reciprocate between the two side walls in the Y direction in the housing 70 with the discharge port 73 close to the porous plate 71.
- An exhaust pipe 90 is connected to a side surface of the housing 70, for example.
- the exhaust pipe 90 communicates with, for example, a negative pressure generating device 91 installed outside the image processing device 18 to exhaust gas in the housing 70 and reduce the pressure in the housing 70 to a predetermined pressure. be able to.
- the housing 70 is supported by, for example, an arm 100 from above.
- the arm 100 can be moved up and down by a housing elevating drive unit 101 such as a cylinder installed outside the cup 62, for example. Therefore, the housing 70 can be moved up and down on the spin chuck 60.
- the operation of the housing lifting / lowering drive unit 101 is controlled by, for example, the gap control unit 102.
- a gap D between the housing 70 and the wafer W which is determined based on the optimum supply amount of the developer to the wafer W, is set.
- the height of the housing 70 can be adjusted based on the height.
- a receiving plate 110 is provided as a receiving member for receiving a developing solution supplied to the outside of the wafer W held by the spin chuck 60.
- the receiving plate 110 is formed in a rectangular shape larger than the porous plate 71 of the housing 70 when viewed from above as shown in FIG.
- a circular opening 111 slightly larger than the shape of the wafer W as viewed from above is formed.
- the radius of the opening 111 is formed to be larger than the radius of the wafer W by about 0.1 mm to lmm.
- the receiving plate 110 is arranged such that the opening 111 coincides with the position of the wafer W on the spin chuck 60 when viewed from above. As shown in FIG.
- the receiving plate 110 is provided with a receiving plate elevating drive unit 112 composed of a cylinder or the like, and the receiving plate 110 may be positioned on the same plane as the wafer W on the spin chuck 60 or may be mounted on the wafer. You can retreat to a position lower than W.
- a rail 120 extending in the Y direction is formed outside the cup 62 in the positive X direction.
- the renole 120 is formed, for example, from the outside of the cup 62 on the negative side in the Y direction (left direction in FIG. 5) to the vicinity of the center of the spin chuck 60.
- a rinsing arm 122 that holds a cleaning liquid supply nozzle 121 is attached to the renole 120.
- the rinse arm 122 can be moved along the rail 120 by the drive unit 123. Therefore, the cleaning liquid supply nozzle 121 can move up to the external force of the cup 62 and above the wafer W of the spin chuck 60.
- one unprocessed wafer W is taken out of the cassette C by the wafer transfer body 7 and transferred to the extension device 32 belonging to the third processing device group G3.
- wafer W The wafer W is carried into the adhesion device 31 by the main transfer device 13, and the wafer W is coated with, for example, HMDS for improving the adhesiveness of the resist solution.
- the wafer W is transferred to the cooling device 30, cooled to a predetermined temperature, and then transferred to the resist coating device 17.
- the wafer W on which the resist film is formed in the resist coating device 17 is sequentially transferred to the pre-baking device 33 and the extension cooling device 41 by the main transfer device 13, and further to the peripheral exposure device 51,
- the wafers are sequentially conveyed to an exposure apparatus (not shown), and are subjected to predetermined processing in each apparatus.
- the wafer W is transferred to the extension device 42 by the wafer carrier 50, and then subjected to predetermined processing by the post-exposure baking device 44 and the cooling device 43. It is conveyed and developed.
- the wafer W that has been subjected to the development processing in the development processing device 18 is sequentially transferred to the post-baking device 46 and the cooling device 30 and subjected to predetermined processing in each device. Then, it is returned to cassette C, and a series of photolithography processes is completed.
- the housing 70 Before the start of the coating and developing system 1, the housing 70 is waiting above the cup 62 by the housing lifting / lowering drive unit 101.
- the atmosphere in the housing 70 is exhausted through the exhaust pipe 90, and the interior of the housing 70 is reduced to a negative pressure of, for example, about 10-10 OPa.
- the pressure in the housing 70 becomes negative, the developing solution is discharged from the developing solution discharging nozzle 72, and the developing solution discharging nozzle 72 is the end of the porous plate 71 on the negative side in the Y direction (hereinafter referred to as “one end”).
- the other end To the end on the positive side in the Y direction (hereinafter referred to as “the other end”). By doing so, the developer is supplied into the porous plate 71 in a dry state. The developer supplied to the porous plate 71 is maintained in the porous plate 71 without dripping from below by the negative pressure in the housing 70.
- the processing of (c) W is started, and when the wafer W is transferred into the developing processing apparatus 18, first, the wafer W is moved to the spin chuck 60 which has been raised and waited beforehand. Will be retained. Subsequently, the spin chuck 60 is lowered, and the wafer W is stored in a predetermined position in the cup 62 as shown in FIG. After that, the housing 70 is lowered by the housing lifting / lowering drive unit 101, and the gap D between the porous plate 71 of the housing 70 and the wafer W becomes 0.5-3 as shown in FIG. Adjusted to about 0mm. The supply amount of the developer to be supplied to the wafer W later through the gap D is set by the gap D.
- the receiving plate 110 is raised to the same plane as the wafer W by the receiving plate raising / lowering drive unit 112 as shown in FIG. Placed in
- the developing solution discharge nozzle 72 in the housing 70 is connected to the discharge port at one end of the porous plate 71 as shown in FIG.
- the developer is discharged from 73. Due to the discharge of the developer, the developer in the porous plate 71 corresponding to the discharge port 73 is pressurized, and the developer is pushed out from the lower surface of the porous plate 71.
- the developer is applied onto the direction-side receiving plate 110 in a line. Thereafter, as shown in FIG. 9, the developer discharge nozzle 72 moves to the upper end of the porous plate 71 and to the upper end of the porous plate 71 with the developer discharged from the developer discharge nozzle 72.
- the developing solution discharged from the developing solution discharge nozzle 72 pushes the developing solution into the porous plate 71, and a continuous developing solution is continuously supplied onto the wafer W.
- the developing solution pushed out from the inside of the porous plate 71 is decelerated when passing through the inside of the porous plate 71, and is supplied to the wafer W extremely statically.
- the developing solution discharge nozzle 72 moves to the other end of the porous plate 71 in this manner, the developing solution is filled between the wafer W and the porous plate 71 as shown in FIG. Of developer is supplied.
- the developer supplied outside the wafer W is received by the receiving plate 110 and is sandwiched between the receiving plate 110 and the porous plate 71. Therefore, the flow of the developer is prevented even outside the wafer W.
- the developer discharge nozzle 72 stops when it reaches the other end of the porous plate 71, and at that time, discharge from the discharge outlet 73 also stops. Thereafter, the wafer W is statically developed for a predetermined time with the developer interposed between the porous plate 71 and the wafer W.
- the housing 70 rises above the cup 62 and the developer discharge nozzle 72 is returned to one end of the porous plate 71.
- the receiving plate 110 is lowered to a position lower than ⁇ and W.
- the cleaning liquid supply nozzle 121 Then, the side wall 63 of the cup 62 is moved up by the lifting drive unit 65.
- the wafer W is rotated by the spin chuck 60, and the cleaning liquid is supplied to the center of the wafer W from the cleaning liquid supply nozzle 121 to clean the wafer W.
- the negative pressure in the housing 70 is maintained even during this cleaning process, thereby preventing the developer in the porous plate 71 from dropping.
- the rotation of the wafer W is maintained and the wafer W is shaken off and dried.
- the rotation of the wafer W is stopped, the spin chuck 60 is raised, and the wafer W is delivered to the main transport device 13.
- the wafer W is carried out of the developing device 18 by the main transfer device 13 and a series of developing processes is completed.
- the developing solution discharged from the developing solution discharge nozzle 72 is supplied to the wafer W after being decelerated in the porous plate 71, so that the developing solution It does not flow.
- the development of the wafer W is stabilized without being affected by the flow of the developer, and the development is performed evenly within the wafer surface. Since the developing solution supplied onto the wafer W is continuously extruded from the porous plate 71, it is possible to prevent development unevenness due to bubbles that do not mix with the developing solution. Since the developer is sandwiched between the porous plate 71 and the wafer W, even a small amount of the developer can be spread over the entire surface of the wafer W. Therefore, the consumption of the developer can be reduced.
- the developing solution can be spread over the entire surface of the wafer W, so that development can be properly performed on any type of wafer. Further, since the developer passes through the fine porous plate 71, impurities contained in the developer can be removed from the porous plate 71.
- the gap D between the porous plate 71 and the wafer W can be adjusted to control the supply amount of the developer to the wafer W. Since the exhaust pipe 90 is connected to the housing 70 and the inside of the housing 70 is made to have a negative pressure, the developer is held in the porous plate 71 and the dripping of the developer can be prevented. In addition, since the developing solution is contained in the porous plate 71 and the developing solution can be discharged from the discharge port 73, the developing solution is immediately extruded from the porous plate 71 and supplied to the wafer W. Can be done quickly.
- the nozzle moving mechanism 80 Since the nozzle moving mechanism 80 is provided in the casing 70, the negative pressure chamber S is sealed and the casing is immediately closed. The inside of 70 can be easily maintained in a negative pressure state. Note that.
- the nozzle moving mechanism 80 may be provided outside the housing 70. Since the receiving plate 110 is provided in the cup 62, the developer supplied to the outside of the wafer W is received on the same plane as the wafer W, and the flow of the developer at the edge of the wafer W is prevented. it can. As a result, the flow of the developer is prevented even at the end of the wafer W, and stable development is performed.
- the receiving plate 110 is provided with the receiving plate raising / lowering drive unit 112, the receiving plate 110 can be retracted to a position lower than the wafer W during the cleaning process and the drying process other than the developing process. By doing so, it is possible to prevent the generation of particles caused by the liquid scattered from the rotated wafer W colliding with the receiving plate 110.
- the developing solution discharge nozzle 72 of the developing device 18 described in the above embodiment has the lower end surface 131 of the developing solution discharge nozzle 130 formed flat, and the lower end surface
- the discharge port 131a may be opened at the center and the horizontal part 131b may be formed around the discharge port 131a.
- the horizontal portion 131b is formed to have a length, for example, about five times the diameter of the discharge port 131a.
- the lower end surface 131 of the developing solution discharge nozzle 130, that is, the discharge port 131a and the horizontal portion 131b are close to the upper surface of the porous plate 71 as in the above embodiment.
- the developing solution when supplying the developing solution to the wafer W, the developing solution is discharged from the discharge port 131a toward the porous plate 71 with the horizontal portion 131b close to the porous plate 71.
- the developer discharged from the discharge port 131a is prevented from flowing out of the gap between the lower end surface 131 and the porous plate 71 into the housing 70, and the developer is efficiently discharged into the porous plate 71. Flows into. As a result, the amount of the developer that is accumulated in the housing 70 and is wasted is reduced, and the developer can be saved.
- the horizontal portion 131b is close to the porous plate 71 in this example, it may be in contact with the porous plate 71.
- one developer discharge nozzle 72 is provided in the housing 70.
- FIG. 12 shows such an example, in which two first and second developer discharge nozzles 150 and 151 are provided in a housing 70.
- the first and second developer ejection nozzles 150 and 151 are attached to a common rail 152 provided on the upper surface of the housing 70 along the Y direction, for example.
- the first developer discharge nozzle 150 is provided on the negative side in the Y direction
- the second developer discharge nozzle 151 is provided on the positive side in the Y direction.
- the discharge port 155 of the first developing solution discharging nozzle 150 is formed, for example, on the positive side in the Y direction with respect to the vertical center axis of the first developing solution discharging nozzle 150.
- the discharge port 156 of the second developer discharge nozzle 151 is formed, for example, on the negative side in the Y direction with respect to the vertical center axis of the second developer discharge nozzle 151.
- the discharge port 155 and the discharge port 156 are close to each other.
- the first and second developing solution discharge nozzles 150, 151 rotate at the center on the porous plate 71, that is, with the porous plate 71 interposed therebetween.
- the chucks 60 are arranged close to each other at a position facing the center of the wafer W.
- the developing solution is discharged from the first and second developing solution discharging nozzles 150 and 151.
- the first developing solution discharging nozzle 150 extends from the center of the porous plate 71 to the end on the negative side in the Y direction.
- the second developer discharge nozzle 151 moves from the center of the porous plate 71 to the end in the positive Y direction.
- the developer is supplied to the entire surface of the wafer W below the porous plate 71.
- the time of the developer supply step can be shortened, and the processing efficiency of the development process can be improved.
- the number of developing solution discharge nozzles is not limited to two, but may be three or more.
- the entire porous plate 71 is formed of a porous material having the same characteristics. However, a plurality of materials are used for the porous plate 71 so that the porous plate 71 extends from the upper surface to the lower surface.
- the pore diameter may be reduced as approaching.
- the porous plate 160 has a three-layer structure, and the upper layer 160a is made of a porous material having a pore diameter of about 0.5 mm and a porosity of about 50 Q / o.
- a porous plate 160 may be formed by superposing a plurality of fine plate-like nets so that the positions of the holes are shifted. Further, a porous plate may be formed by combining a fine mesh, a mesh and a porous material.
- the discharge port of the developer discharge nozzle has a slit shape.
- the discharge port of the developer discharge nozzle has a circular shape, and a plurality of discharge ports are arranged in parallel on the lower surface of the developer discharge nozzle.
- the present invention is applied to a developing apparatus for a wafer W, the present invention can also be applied to a developing apparatus for a substrate other than a wafer, such as an FPD substrate such as an LCD substrate and a glass substrate for a photomask. .
- a developing apparatus for developing a substrate it is useful when supplying the developing solution to the substrate so as to prevent air bubbles from entering the developing solution and to prevent the flow of the developing solution on the substrate. Confuse.
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- General Physics & Mathematics (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
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JP2003280842A JP4263559B2 (ja) | 2003-07-28 | 2003-07-28 | 現像処理装置及び現像処理方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20180301356A1 (en) * | 2012-08-31 | 2018-10-18 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
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KR101254698B1 (ko) * | 2006-10-20 | 2013-04-15 | 주식회사 케이씨텍 | 대면적 기판의 처리장치 |
JP6390732B2 (ja) * | 2013-08-05 | 2018-09-19 | 東京エレクトロン株式会社 | 処理液供給装置 |
JP6221954B2 (ja) * | 2013-08-05 | 2017-11-01 | 東京エレクトロン株式会社 | 現像方法、現像装置及び記憶媒体 |
TWI815827B (zh) * | 2017-11-07 | 2023-09-21 | 日商東京威力科創股份有限公司 | 基板處理裝置 |
CN111433888B (zh) | 2017-12-12 | 2023-09-26 | 东京毅力科创株式会社 | 液供给装置和液供给方法 |
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JP2000173906A (ja) * | 1998-12-10 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | 現像液供給方法及び現像装置 |
JP2001239187A (ja) * | 1999-09-10 | 2001-09-04 | Sigma Meltec Ltd | 液体供給ノズルと処理方法 |
JP2002289502A (ja) * | 2001-03-27 | 2002-10-04 | Toshiba Corp | 基板処理方法及び基板処理装置 |
JP2003100589A (ja) * | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | 現像装置及び現像方法 |
JP2003158061A (ja) * | 2001-11-22 | 2003-05-30 | Tokyo Electron Ltd | 基板処理装置および基板処理方法 |
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- 2003-07-28 JP JP2003280842A patent/JP4263559B2/ja not_active Expired - Fee Related
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Patent Citations (5)
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JP2000173906A (ja) * | 1998-12-10 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | 現像液供給方法及び現像装置 |
JP2001239187A (ja) * | 1999-09-10 | 2001-09-04 | Sigma Meltec Ltd | 液体供給ノズルと処理方法 |
JP2002289502A (ja) * | 2001-03-27 | 2002-10-04 | Toshiba Corp | 基板処理方法及び基板処理装置 |
JP2003100589A (ja) * | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | 現像装置及び現像方法 |
JP2003158061A (ja) * | 2001-11-22 | 2003-05-30 | Tokyo Electron Ltd | 基板処理装置および基板処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180301356A1 (en) * | 2012-08-31 | 2018-10-18 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
US10707096B2 (en) * | 2012-08-31 | 2020-07-07 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
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JP2005051008A (ja) | 2005-02-24 |
JP4263559B2 (ja) | 2009-05-13 |
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