WO2004113023A1 - 薬液供給装置 - Google Patents
薬液供給装置 Download PDFInfo
- Publication number
- WO2004113023A1 WO2004113023A1 PCT/JP2003/007858 JP0307858W WO2004113023A1 WO 2004113023 A1 WO2004113023 A1 WO 2004113023A1 JP 0307858 W JP0307858 W JP 0307858W WO 2004113023 A1 WO2004113023 A1 WO 2004113023A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- supply
- liquid
- path
- chemical
- supply path
- Prior art date
Links
- 239000002002 slurry Substances 0.000 claims abstract description 47
- 238000003860 storage Methods 0.000 claims abstract description 31
- 239000000725 suspension Substances 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims description 121
- 239000007788 liquid Substances 0.000 claims description 76
- 238000010992 reflux Methods 0.000 claims description 27
- 239000000243 solution Substances 0.000 claims description 26
- 238000011144 upstream manufacturing Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 17
- 239000006061 abrasive grain Substances 0.000 claims description 16
- 239000011550 stock solution Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 238000007865 diluting Methods 0.000 claims 2
- 239000008155 medical solution Substances 0.000 claims 1
- 230000003134 recirculating effect Effects 0.000 claims 1
- 230000001112 coagulating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 32
- 230000002776 aggregation Effects 0.000 description 15
- 238000004062 sedimentation Methods 0.000 description 13
- 238000004220 aggregation Methods 0.000 description 10
- 238000005054 agglomeration Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000006285 cell suspension Substances 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- -1 respectively Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/80—Forming a predetermined ratio of the substances to be mixed
- B01F35/83—Forming a predetermined ratio of the substances to be mixed by controlling the ratio of two or more flows, e.g. using flow sensing or flow controlling devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
Definitions
- the slurry prepared by the chemical supply device is used, for example, in a final polishing process of a wafer to improve the flatness of the surface of the silicon wafer.
- the wafer surface is polished by the mechanical stress and chemical action of the slurry applied between the polishing pad and the eno.
- An object of the present invention is to provide a chemical liquid supply device capable of stably supplying a mixed chemical liquid that is likely to aggregate or settle.
- FIG. 1 is a schematic diagram of a chemical solution supply device according to a first embodiment of the present invention.
- FIG. 3 is a graph showing a conventional example of the flow rate of the orifice at the start of the supply of the abrasive grains.
- FIG. 4 is an explanatory diagram showing the flow rate of the orifice at the start of the supply of the abrasive grains of the first embodiment.
- FIG. 5 is a schematic diagram of a chemical solution supply device according to a second embodiment of the present invention.
- a first chemical (for example, a stock slurry such as an abrasive suspension) stored in a first storage tank 1 is pumped out by a first pump 3 and sent to a chemical mixing device 4 by pressure.
- a part of the first chemical pumped from the first pump 3 is returned to the first storage tank 1 in order to stir the first chemical in the first storage tank 1.
- the second chemical stored in the second storage tank 2 (for example, a dispersion medium for dilution for preparing a slurry by being mixed with the abrasive suspension) is pumped out by the second pump 5 and mixed with the chemical. It is pumped to device 4.
- Part of the second chemical pumped from the second pump 5 is returned to the second storage tank 2 in order to stir the second chemical in the second storage tank 2.
- the upstream pressure gauge 10 measures the pressure of the first chemical supplied from the upstream valve 8 and supplies the first chemical to the first constant pressure valve 12. The measurement value of the upstream pressure gauge 10 is supplied to the controller 15.
- the first orifice 13 adjusts the flow rate of the first chemical supplied from the downstream pressure gauge 11 and then supplies the first chemical to the first flow meter 14.
- the first flow meter 14 detects the flow rate of the first chemical supplied from the first orifice 13 and supplies the detected value to the control device 15.
- the graph in FIG. 2 shows the relationship between the air pressure for adjusting the first constant pressure valve 12 (horizontal axis) and the flow rate of the first chemical flowing through the first orifice 13 (vertical axis).
- the relationship between the air pressure and the flow rate is changed according to the opening of the first orifice 13.
- a straight line X indicates the relationship when the first orifice 13 is fully opened
- a straight line Y indicates a relationship when the opening of the first orifice 13 is reduced to half
- a straight line Z indicates the relationship.
- the relationship when the flow rate of orifice 13 of 1 is further reduced is shown.
- the second supply route B consists of an upstream pulp 18, a downstream valve 19, an upstream pressure gauge 20, a downstream pressure gauge 21, a second constant pressure valve 22, and a second orifice (flow control means) 2 3 , And a second flow meter 24, and is controlled by a control device 15 that controls the chemical liquid mixing device 4.
- a second return path E similar to the first return path C is connected in the middle of the second supply path B.
- a second return pulp 25 that is opened when the downstream valve 19 is closed.
- the slurry is prepared by mixing the abrasive suspension and the dispersion medium while supplying them to the mixer 6 at a predetermined flow rate. Since the prepared slurry is immediately supplied to the electronic device manufacturing apparatus 7, sedimentation and coagulation of the slurry are prevented, and a slurry of stable quality can be supplied to the electronic device manufacturing apparatus. ' (2) When the slurry is not supplied to the electronic device manufacturing apparatus 7, the flow of the abrasive suspension in the first supply path A causes the slurry to flow to the electronic device manufacturing apparatus 7 due to the reflux through the first reflux path C. It is maintained at the same flow rate as the one being supplied.
- the second reflux route E can prevent the sedimentation and aggregation of the second chemical.
- This time is for adjusting the flow rate by adjusting the constant pressure valve and orifice based on the values detected by the pressure gauge and flow meter after the supply is resumed.
- a chemical solution supply device 200 according to a second embodiment of the present invention will be described with reference to FIG.
- the second embodiment is different from the first embodiment in that a third pump 26 is provided between the mixer 6 and the electronic device manufacturing apparatus 7.
- the third pump 26 is preferably a pump that can appropriately adjust the discharge flow rate.
- the slurry can be supplied at a stable pressure by the third pump 26.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN038255790A CN1713967B (zh) | 2003-06-20 | 2003-06-20 | 药液供给装置 |
JP2005500911A JP4362473B2 (ja) | 2003-06-20 | 2003-06-20 | 薬液供給装置及び供給装置 |
PCT/JP2003/007858 WO2004113023A1 (ja) | 2003-06-20 | 2003-06-20 | 薬液供給装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/007858 WO2004113023A1 (ja) | 2003-06-20 | 2003-06-20 | 薬液供給装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004113023A1 true WO2004113023A1 (ja) | 2004-12-29 |
Family
ID=33524170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/007858 WO2004113023A1 (ja) | 2003-06-20 | 2003-06-20 | 薬液供給装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4362473B2 (pt-PT) |
CN (1) | CN1713967B (pt-PT) |
WO (1) | WO2004113023A1 (pt-PT) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008011014A3 (en) * | 2006-07-17 | 2008-03-20 | Celerity Inc | System and method for processing high puruity materials |
US7799115B2 (en) | 2006-07-17 | 2010-09-21 | Mega Fluid Systems, Inc. | System and method for processing high purity materials |
JP2014000644A (ja) * | 2012-06-19 | 2014-01-09 | Disco Abrasive Syst Ltd | 混合液供給システム |
WO2015133516A1 (ja) * | 2014-03-07 | 2015-09-11 | 株式会社 荏原製作所 | 基板処理システムおよび基板処理方法 |
JP2015536239A (ja) * | 2012-11-13 | 2015-12-21 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | スラリー及び/又は化学ブレンド供給装置 |
US10525568B2 (en) | 2017-01-03 | 2020-01-07 | Sk Siltron Co., Ltd. | Wafer polishing system |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102082200A (zh) * | 2010-11-29 | 2011-06-01 | 常州亿晶光电科技有限公司 | 制绒槽补充均匀浓度化学试剂的装置 |
CN107111324B (zh) * | 2014-10-08 | 2021-09-24 | 弗萨姆材料美国有限责任公司 | 低压力波动流动控制装置及方法 |
CN108145595B (zh) * | 2017-12-22 | 2020-07-07 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种抛光液供给装置及系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000202774A (ja) * | 1999-01-18 | 2000-07-25 | Tokyo Seimitsu Co Ltd | スラリ―の供給装置 |
JP2000218107A (ja) * | 1998-11-25 | 2000-08-08 | Ebara Corp | フィルタ装置及び砥液供給装置 |
JP2001150347A (ja) * | 1999-11-29 | 2001-06-05 | Ebara Corp | 砥液供給装置 |
JP2001345296A (ja) * | 2000-06-02 | 2001-12-14 | Reiton:Kk | 薬液供給装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6280300B1 (en) * | 1998-11-25 | 2001-08-28 | Ebara Corporation | Filter apparatus |
-
2003
- 2003-06-20 CN CN038255790A patent/CN1713967B/zh not_active Expired - Fee Related
- 2003-06-20 WO PCT/JP2003/007858 patent/WO2004113023A1/ja active Application Filing
- 2003-06-20 JP JP2005500911A patent/JP4362473B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000218107A (ja) * | 1998-11-25 | 2000-08-08 | Ebara Corp | フィルタ装置及び砥液供給装置 |
JP2000202774A (ja) * | 1999-01-18 | 2000-07-25 | Tokyo Seimitsu Co Ltd | スラリ―の供給装置 |
JP2001150347A (ja) * | 1999-11-29 | 2001-06-05 | Ebara Corp | 砥液供給装置 |
JP2001345296A (ja) * | 2000-06-02 | 2001-12-14 | Reiton:Kk | 薬液供給装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008011014A3 (en) * | 2006-07-17 | 2008-03-20 | Celerity Inc | System and method for processing high puruity materials |
US7799115B2 (en) | 2006-07-17 | 2010-09-21 | Mega Fluid Systems, Inc. | System and method for processing high purity materials |
US8308845B2 (en) | 2006-07-17 | 2012-11-13 | Mega Fluid Systems, Inc. | System and method for processing high purity materials |
JP2014000644A (ja) * | 2012-06-19 | 2014-01-09 | Disco Abrasive Syst Ltd | 混合液供給システム |
JP2015536239A (ja) * | 2012-11-13 | 2015-12-21 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | スラリー及び/又は化学ブレンド供給装置 |
WO2015133516A1 (ja) * | 2014-03-07 | 2015-09-11 | 株式会社 荏原製作所 | 基板処理システムおよび基板処理方法 |
JP2015168035A (ja) * | 2014-03-07 | 2015-09-28 | 株式会社荏原製作所 | 基板処理システムおよび基板処理方法 |
KR101852705B1 (ko) | 2014-03-07 | 2018-04-26 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 처리 시스템 및 기판 처리 방법 |
US10618140B2 (en) | 2014-03-07 | 2020-04-14 | Ebara Corporation | Substrate processing system and substrate processing method |
US10525568B2 (en) | 2017-01-03 | 2020-01-07 | Sk Siltron Co., Ltd. | Wafer polishing system |
Also Published As
Publication number | Publication date |
---|---|
JP4362473B2 (ja) | 2009-11-11 |
CN1713967A (zh) | 2005-12-28 |
CN1713967B (zh) | 2011-10-19 |
JPWO2004113023A1 (ja) | 2006-07-20 |
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