WO2004097441A1 - 制御素子と一体化した感磁素子 - Google Patents
制御素子と一体化した感磁素子 Download PDFInfo
- Publication number
- WO2004097441A1 WO2004097441A1 PCT/JP2004/004964 JP2004004964W WO2004097441A1 WO 2004097441 A1 WO2004097441 A1 WO 2004097441A1 JP 2004004964 W JP2004004964 W JP 2004004964W WO 2004097441 A1 WO2004097441 A1 WO 2004097441A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- operation control
- magneto
- control element
- sensitive element
- magnetic
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
Definitions
- the present invention relates to a magneto-sensitive element such as a magnetic element that can cause a large Barkhausen jump phenomenon.
- magneto-sensitive elements such as magnetic elements capable of causing a large Barkhausen jump phenomenon have been used for various purposes by being used together with an operation control element for operating and controlling the operation of the magneto-sensitive element. It has been applied to equipment or devices.
- Hall elements In addition to magnetic elements that can cause a large Barkhausen jump phenomenon, Hall elements, MRs (magnetoresistive elements), GMRs (giant magnetoresistive elements), TMRs Resistance element).
- magnetic elements that can cause a large Barkhausen jump phenomenon have been widely used in a wide range such as a pulse generator, various measuring devices, various detecting devices, and various markers.
- a magneto-sensitive element and an operation control element are individually manufactured and adjusted, and then the magneto-sensitive element and the operation control element are operated.
- the control element has been manufactured by arranging it on a substrate or some kind of base, adjusting, connecting and fixing.
- a magneto-sensitive element characterized by being integrated with an operation control element.
- the operation control element and the magneto-sensitive element are integrated by a film forming process.
- the operation control element and the magneto-sensitive element are integrated by laminating a film.
- the activation control element is provided in a single layer.
- the operation control element is provided in a multilayer.
- the operation control element includes a permanent magnet.
- the operation control element includes an electromagnet. According to still another embodiment of the present invention, the operation control element includes a magnetic circuit forming member.
- the magneto-sensitive element is a magnetic element capable of causing a large Barkhausen jump phenomenon.
- a pickup coil is further integrated with the magneto-sensitive element.
- FIG. 1 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element as a first embodiment of the present invention.
- FIG. 2 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a second embodiment of the present invention.
- FIG. 3 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a third embodiment of the present invention.
- FIG. 4 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a fourth embodiment of the present invention.
- FIG. 5 is a diagram schematically showing a configuration of a magnetic sensing element integrated with an operation control element according to a fifth embodiment of the present invention.
- FIG. 6 is a diagram schematically showing a configuration of a magnetic sensing element integrated with an operation control element according to a sixth embodiment of the present invention.
- FIG. 5 is a side view schematically showing a configuration of a magneto-sensitive element integrated with an operation control element and a pickup coil as a seventh embodiment of the present invention.
- FIG. 8 is a plan view showing the seventh embodiment of FIG.
- FIG. 9 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to an eighth embodiment of the present invention.
- FIG. 10 is a view schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a ninth embodiment of the present invention.
- FIG. 1 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element as a first embodiment of the present invention.
- an operation control element 11 and a magneto-sensitive element 12 are integrally formed on a substrate 10.
- the substrate 10 is a substrate on which a thin film can be formed, and is a solid material such as silicon or glass. Not limited to this, it may be a flexible material or a liquid.
- the substrate 10 may have various laminated structures such as flip chips and bonding.
- the magneto-sensitive element 12 may be a large Barkhausen element, a Hall, an MR, a GMR, a TMR, or the like.
- the operation control element 11 generally means a magnetic field that exerts a magnetic field on the magneto-sensitive element 11, specifically, a permanent magnet, an electromagnet, or the like, in the vicinity of the magneto-sensitive element 12
- a member that forms a magnetic circuit for guiding or inducing a magnetic field in order to properly apply the magnetic field of these various magnets disposed at spaced positions to the magneto-sensitive element 12 may be included.
- the operation control element 11 is provided on the substrate 10, and the operation control element 11 is further arranged so that the magneto-sensitive element 12 overlaps the operation control element 11.
- the magneto-sensitive element 11 and the magneto-sensitive element 12 are integrally formed by a thin film manufacturing process.
- an insulating layer, a nonmagnetic layer, and the like are also provided in the thin film manufacturing process.
- the magneto-sensitive element 12 is a magnetic element that causes a large Barkhausen jump phenomenon
- the operation control element 11 is a permanent magnet.
- a magnetic element that can cause a large Barkhausenjump phenomenon for example, a magnetic element based on an iron-nickel alloy or an iron-cobalt alloy, or an amorphous element is used.
- As a structure there is a multi-layer structure having a hard layer and a soft layer or a single-layer structure. When an external magnetic field having a different polarity is applied to such a magnetic element alternately, the magnetic domain wall rapidly moves, causing a reversal of the magnetic field, thereby inducing a sudden pulse voltage in a nearby pickup coil. I do.
- the film forming process and manufacturing conditions for forming such a magnetic sensing element and an operation control element in a thin film include the following.
- the same composition material can be obtained.
- the magnetic layers formed by film formation have different crystal structures, for example, crystal grain size, directionality, By controlling the properties and the like, the coercive force and the anisotropy of each magnetic layer can be varied to obtain a magnetic element capable of causing a large Barthahausen jump phenomenon.
- the operation control element that becomes a permanent magnet can be formed of a magnet material unique to a thin film such as CoPt in addition to a general permanent magnet material.
- the method of integrally forming the magneto-sensitive element and the operation control element on the substrate is not limited to the film forming process described above, and the film-shaped operation control element and the magneto-sensitive element may be formed on the substrate. It is also conceivable to stick them together. '
- FIG. 2 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a second embodiment of the present invention.
- an operation control element 21 and a magneto-sensitive element 22 are integrally formed on a substrate 20.
- the operation control element 21 and the magneto-sensitive element 22 are arranged on the substrate 20 so that the operation control element 21 and the magneto-sensitive element 22 are arranged in an axis-aligned manner. Is thin
- FIG. 3 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a third embodiment of the present invention.
- an operation control element 31 and a magneto-sensitive element 32 are integrally formed on a substrate 30.
- the operation control element 31 and the magneto-sensitive element 32 are arranged such that the operation control element 31 and the magneto-sensitive element 32 are juxtaposed on the substrate 30. It is formed integrally by the thin film manufacturing process.
- the method of forming the integral ridge is the same as that described above for the first embodiment.
- FIG. 4 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a fourth embodiment of the present invention.
- the operation control element integrated with the magneto-sensitive element is provided in a single layer.
- the operation control element integrated with the magneto-sensitive element is provided in multiple layers. That is, in the fourth embodiment, the magneto-sensitive element 42 is provided on one surface of the substrate 40, and the first operation control element 41 is provided on the magneto-sensitive element 42.
- the first operation control element 41 and the second operation control element 43 are provided on the substrate 40 such that the second operation control element 43 is provided on the surface opposite to 40.
- the element 42 is formed integrally with the thin film manufacturing process. The method of forming this integration is the same as described above for the first embodiment.
- FIG. 5 is a diagram schematically showing a configuration of a magnetic sensing element integrated with an operation control element according to a fifth embodiment of the present invention.
- an operation control element is provided to the magneto-sensitive element in multiple layers.
- one of the substrates 50 is provided.
- a magnetic sensing element 52 is provided on the surface
- a first operation control element 51 is provided in axial alignment with the magnetic sensing element 52
- a second operation control element 51 is provided on the surface on the opposite side of the substrate 50.
- the first operation control element 51, the second operation control element 53, and the magneto-sensitive element 52 are formed on the substrate 50 by the thin film manufacturing process. It is formed integrally.
- FIG. 6 is a diagram schematically showing a configuration of a magnetic sensing element integrated with an operation control element according to a sixth embodiment of the present invention.
- the operation control element is provided to the magneto-sensitive element in multiple layers.
- one of the substrates 60 is provided.
- a magnetic sensing element 62 is provided on the surface, and a first operation control element 61 is provided in parallel with the magnetic sensing element 62, and a second operation control element 61 is provided on the surface on the opposite side of the substrate 60.
- the operation control element 63 provided, the first operation control element 61, the second operation control element 63, and the magneto-sensitive element 62 are integrally formed on the substrate 60 in the thin film manufacturing process. Is formed.
- first to third embodiments are cases in which only an operation control element of one polarity is provided in advance as a method of alternately applying a magnetic field, and the fourth to sixth embodiments are described above.
- an operation control element having the other polarity is provided in advance.
- it is not limited to giving to the front and back of the substrate, and it is also possible to give two layers to the front surface of the substrate or two layers to the back surface of the substrate.
- FIG. 7 is a side view schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a seventh embodiment of the present invention
- FIG. 8 is a plan view thereof.
- the operation control element is provided to the magneto-sensitive element in multiple layers.
- the magneto-sensitive element is provided.
- the pick-up coil to be applied to the above is also provided in an integrated manner.
- the first operation control element 71 and the magneto-sensitive element 72 are provided on one surface of the substrate 70 so as to be axially aligned, and are provided on the opposite side of the substrate 70.
- a thin-film pickup coil 74 is provided on the surface, and a second operation control element 73 is provided so as to overlap on the thin-film pickup coil 74, so that the first operation coil 73 is provided on the substrate 70.
- the motion control element 71, the second operation control element 73, the thin-film pickup coil 74, and the magneto-sensitive element 72 are integrally formed by a thin-film manufacturing process.
- FIG. 9 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to an eighth embodiment of the present invention.
- an operation control element 81 serving as a permanent magnet and a magnetic sensing element 82 are juxtaposed on a substrate 80, and the magnetic field of the permanent magnet serving as the operation control element 81 is applied to a magnetic sensing element.
- a magnetic circuit forming member 85 for guiding or inducing a magnetic field in order to more appropriately apply the element 82 is also provided integrally. Therefore, in the present invention, such a magnetic circuit forming member is also regarded as a kind of operation control element.
- an operation control element 81, a magnetic sensing element 82, and a magnetic circuit forming member 85 are integrally formed on a substrate 80 by a thin film manufacturing process.
- the method of forming the integral ridge is the same as that described above for the first embodiment.
- FIG. 10 is a diagram schematically showing a configuration of a magneto-sensitive element integrated with an operation control element according to a ninth embodiment of the present invention.
- an operation control element 91 serving as a permanent magnet and a magnetic sensing element 92 are axially aligned on a substrate 90, and the magnetic field of the permanent magnet serving as the operation control element 91 is sensed.
- a magnetic circuit forming member 96 connecting between the permanent magnets 91 to effectively act on the magnetic element 92 is also provided integrally. Therefore, in the present invention, such a magnetic circuit forming member also has an operation control element. It is regarded as a kind of child.
- an operation control element 91, a magneto-sensitive element 92, and a magnetic circuit forming member 96 are integrally formed on a substrate 90 by a thin film manufacturing process.
- the magneto-sensitive element is a magnetic element capable of causing a large Baltahausen jump phenomenon.
- the present invention is not limited to such a magnetic element, but may be a Hall element, The same applies to the relationship between other magnetic elements such as MR (magnetoresistive element), GMR (giant magnetoresistive element), and TMR (tunnel magnetoresistive element) and the operation control element for controlling the operation of this magnetic element. It has the same effect.
- MR magnetoresistive element
- GMR giant magnetoresistive element
- TMR tunnel magnetoresistive element
- a permanent magnet is provided as the operation control element.
- the present invention is not limited to this, and an electromagnet may be provided.
- the present invention is effective because a magnetic element capable of causing a large Barkhausen jump phenomenon and an element for controlling the magnetic element have an extremely delicate balance of magnetic force.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04725993A EP1612574A4 (en) | 2003-04-25 | 2004-04-06 | INTEGRATED MAGNETIC FIELD SENSOR IN A CONTROL UNIT |
US11/227,617 US20060007607A1 (en) | 2003-04-25 | 2005-09-15 | Magnetically sensitive element having its control element integrated therewith |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-122387 | 2003-04-25 | ||
JP2003122387A JP2004325344A (ja) | 2003-04-25 | 2003-04-25 | 制御素子と一体化した感磁素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/227,617 Continuation US20060007607A1 (en) | 2003-04-25 | 2005-09-15 | Magnetically sensitive element having its control element integrated therewith |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004097441A1 true WO2004097441A1 (ja) | 2004-11-11 |
Family
ID=33410073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/004964 WO2004097441A1 (ja) | 2003-04-25 | 2004-04-06 | 制御素子と一体化した感磁素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060007607A1 (ja) |
EP (1) | EP1612574A4 (ja) |
JP (1) | JP2004325344A (ja) |
CN (1) | CN1777816A (ja) |
WO (1) | WO2004097441A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013145297A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社フジクラ | 薄膜フラックスゲート型磁気素子 |
WO2013145284A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社フジクラ | 電流センサ |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7196881B2 (en) * | 2004-03-08 | 2007-03-27 | Hitachi Global Storage Technologies Netherlands B.V. | Adaptive domain stabilization for magnetic recording read sensors |
US7570461B2 (en) * | 2005-02-28 | 2009-08-04 | Seagate Technology Llc | Magnetic sensor with in-stack biasing |
JP2007218700A (ja) * | 2006-02-15 | 2007-08-30 | Tdk Corp | 磁気センサおよび電流センサ |
JP2008249556A (ja) | 2007-03-30 | 2008-10-16 | Tdk Corp | 磁気センサ |
US9958511B2 (en) * | 2014-12-08 | 2018-05-01 | Infineon Technologies Ag | Soft switching of magnetization in a magnetoresistive sensor |
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JPS59104573A (ja) * | 1982-12-07 | 1984-06-16 | Matsushita Electric Ind Co Ltd | 薄膜磁気センサ |
JPH0784019A (ja) * | 1993-09-17 | 1995-03-31 | Seiko Instr Inc | 高感度磁場検出器 |
JPH0875835A (ja) * | 1994-09-09 | 1996-03-22 | Mitsumi Electric Co Ltd | 磁気インピーダンス素子および磁気検出回路 |
JPH08179023A (ja) * | 1994-12-27 | 1996-07-12 | Res Dev Corp Of Japan | 半導体基板に集積される磁気検出素子及び磁気検出モジュール |
JP2000193728A (ja) * | 1998-12-25 | 2000-07-14 | Toyota Central Res & Dev Lab Inc | 磁界検出素子 |
JP2001013231A (ja) * | 1999-05-12 | 2001-01-19 | Asulab Sa | 半導体基板上に形成された磁気センサ |
JP2001194181A (ja) * | 2000-01-07 | 2001-07-19 | Hirose Cherry Precision:Kk | 磁気センサに用いるピックアップコイル |
Family Cites Families (6)
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US6001430A (en) * | 1994-09-08 | 1999-12-14 | Nec Corporation | Magnetoresistance effect film and production process thereof |
JP3096413B2 (ja) * | 1995-11-02 | 2000-10-10 | キヤノン電子株式会社 | 磁気検出素子、磁気センサー、地磁気検出型方位センサー、及び姿勢制御用センサー |
US5889403A (en) * | 1995-03-31 | 1999-03-30 | Canon Denshi Kabushiki Kaisha | Magnetic detecting element utilizing magnetic impedance effect |
EP0989411A3 (en) * | 1998-09-25 | 2004-10-06 | Alps Electric Co., Ltd. | Magneto-impedance effect element |
ATE434192T1 (de) * | 2000-10-26 | 2009-07-15 | Foundation The Res Inst Of Ele | Dünnfilm-magnetfeldsensor |
US7141966B2 (en) * | 2004-07-01 | 2006-11-28 | Denso Corporation | Rotation detecting apparatus |
-
2003
- 2003-04-25 JP JP2003122387A patent/JP2004325344A/ja active Pending
-
2004
- 2004-04-06 EP EP04725993A patent/EP1612574A4/en not_active Withdrawn
- 2004-04-06 WO PCT/JP2004/004964 patent/WO2004097441A1/ja active Application Filing
- 2004-04-06 CN CN200480011080.5A patent/CN1777816A/zh active Pending
-
2005
- 2005-09-15 US US11/227,617 patent/US20060007607A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104573A (ja) * | 1982-12-07 | 1984-06-16 | Matsushita Electric Ind Co Ltd | 薄膜磁気センサ |
JPH0784019A (ja) * | 1993-09-17 | 1995-03-31 | Seiko Instr Inc | 高感度磁場検出器 |
JPH0875835A (ja) * | 1994-09-09 | 1996-03-22 | Mitsumi Electric Co Ltd | 磁気インピーダンス素子および磁気検出回路 |
JPH08179023A (ja) * | 1994-12-27 | 1996-07-12 | Res Dev Corp Of Japan | 半導体基板に集積される磁気検出素子及び磁気検出モジュール |
JP2000193728A (ja) * | 1998-12-25 | 2000-07-14 | Toyota Central Res & Dev Lab Inc | 磁界検出素子 |
JP2001013231A (ja) * | 1999-05-12 | 2001-01-19 | Asulab Sa | 半導体基板上に形成された磁気センサ |
JP2001194181A (ja) * | 2000-01-07 | 2001-07-19 | Hirose Cherry Precision:Kk | 磁気センサに用いるピックアップコイル |
Non-Patent Citations (1)
Title |
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See also references of EP1612574A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013145297A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社フジクラ | 薄膜フラックスゲート型磁気素子 |
WO2013145284A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社フジクラ | 電流センサ |
Also Published As
Publication number | Publication date |
---|---|
EP1612574A4 (en) | 2008-08-27 |
EP1612574A1 (en) | 2006-01-04 |
JP2004325344A (ja) | 2004-11-18 |
US20060007607A1 (en) | 2006-01-12 |
CN1777816A (zh) | 2006-05-24 |
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