ATE434192T1 - Dünnfilm-magnetfeldsensor - Google Patents

Dünnfilm-magnetfeldsensor

Info

Publication number
ATE434192T1
ATE434192T1 AT01978911T AT01978911T ATE434192T1 AT E434192 T1 ATE434192 T1 AT E434192T1 AT 01978911 T AT01978911 T AT 01978911T AT 01978911 T AT01978911 T AT 01978911T AT E434192 T1 ATE434192 T1 AT E434192T1
Authority
AT
Austria
Prior art keywords
magnetic field
thin
film
field sensor
bridge circuit
Prior art date
Application number
AT01978911T
Other languages
English (en)
Inventor
Nobukiyo Kobayashi
Takeshi Yano
Shigehiro Ohnuma
Kiwamu Shirakawa
Tsuyoshi Masumoto
Original Assignee
Foundation The Res Inst Of Ele
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000367822A external-priority patent/JP4023997B2/ja
Priority claimed from JP2001316084A external-priority patent/JP2003078187A/ja
Priority claimed from JP2001315935A external-priority patent/JP4204775B2/ja
Application filed by Foundation The Res Inst Of Ele filed Critical Foundation The Res Inst Of Ele
Application granted granted Critical
Publication of ATE434192T1 publication Critical patent/ATE434192T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
AT01978911T 2000-10-26 2001-10-25 Dünnfilm-magnetfeldsensor ATE434192T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000367822A JP4023997B2 (ja) 2000-10-26 2000-10-26 薄膜磁界センサ
JP2001316084A JP2003078187A (ja) 2001-09-05 2001-09-05 磁界センサ
JP2001315935A JP4204775B2 (ja) 2001-10-12 2001-10-12 薄膜磁界センサ
PCT/JP2001/009385 WO2002037131A1 (en) 2000-10-26 2001-10-25 Thin-film magnetic field sensor

Publications (1)

Publication Number Publication Date
ATE434192T1 true ATE434192T1 (de) 2009-07-15

Family

ID=27345351

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01978911T ATE434192T1 (de) 2000-10-26 2001-10-25 Dünnfilm-magnetfeldsensor

Country Status (8)

Country Link
US (1) US6642714B2 (de)
EP (1) EP1329735B1 (de)
KR (1) KR100687513B1 (de)
CN (1) CN100403048C (de)
AT (1) ATE434192T1 (de)
DE (1) DE60139017D1 (de)
TW (1) TW550394B (de)
WO (1) WO2002037131A1 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG106612A1 (en) * 2001-05-29 2004-10-29 Sony Electronics Singapore Pte A force sensing device
US7292414B1 (en) 2001-11-09 2007-11-06 Maxtor Corporation External coil bias for giant magneto-resistive sensor
JP2004271323A (ja) * 2003-03-07 2004-09-30 Delta Tooling Co Ltd 漏洩磁場検出装置
US20040189292A1 (en) * 2003-03-25 2004-09-30 Kautz David R. Mechanism for and method of biasing magnetic sensor
JP2004325344A (ja) * 2003-04-25 2004-11-18 Hirose Cherry Precision Co Ltd 制御素子と一体化した感磁素子
JP2004356338A (ja) * 2003-05-28 2004-12-16 Res Inst Electric Magnetic Alloys 薄膜磁気センサ及びその製造方法
JP2004363157A (ja) * 2003-06-02 2004-12-24 Res Inst Electric Magnetic Alloys 薄膜磁気センサ及びその製造方法
DE10345017A1 (de) 2003-09-23 2005-04-14 Deutsche Telekom Ag Verfahren und Vorrichtung zur Adressierbarkeit von Personen für Sprachkommunikation hinter beliebigen verbindungsorientierten Anschlussarten
FR2876800B1 (fr) * 2004-10-18 2007-03-02 Commissariat Energie Atomique Procede et dispositif de mesure de champ magnetique a l'aide d'un capteur magnetoresitif
US7505233B2 (en) * 2004-12-15 2009-03-17 International Business Machines Corporation Magnetic sensor
US7436184B2 (en) 2005-03-15 2008-10-14 Pathfinder Energy Services, Inc. Well logging apparatus for obtaining azimuthally sensitive formation resistivity measurements
US7414405B2 (en) 2005-08-02 2008-08-19 Pathfinder Energy Services, Inc. Measurement tool for obtaining tool face on a rotating drill collar
CN101427394B (zh) * 2006-04-28 2010-12-15 微门有限公司 薄膜三轴磁通门及其实施方法
DE102006062750B4 (de) * 2006-09-15 2010-07-08 Infineon Technologies Ag Vorrichtung zum Erfassen einer Änderung einer physikalischen Grösse mittels einer Stromleiterstruktur
GB2446146B (en) 2007-01-31 2009-11-18 Gm Global Tech Operations Inc Arrangement of a two stage turbocharger system for an internal combustion engine
JP5151551B2 (ja) * 2008-02-27 2013-02-27 大同特殊鋼株式会社 薄膜磁気センサ
US8519703B2 (en) * 2008-03-20 2013-08-27 Infineon Technologies Ag Magnetic sensor device and method of determining resistance values
US8120353B2 (en) 2008-04-28 2012-02-21 International Business Machines Corporation Methods for detecting damage to magnetoresistive sensors
US8018226B2 (en) 2008-04-28 2011-09-13 International Business Machines Corporation Methods for detecting damage to magnetoresistive sensors
JP5128416B2 (ja) * 2008-08-20 2013-01-23 株式会社東海理化電機製作所 磁気センサ装置
CN102132168B (zh) * 2008-09-29 2013-07-24 欧姆龙株式会社 磁场检测元件及信号传递元件
US8283921B2 (en) * 2008-11-26 2012-10-09 General Electric Company Magnetoresistance sensors for position and orientation determination
US8358128B2 (en) * 2008-11-28 2013-01-22 General Electric Company Surgical navigation system with magnetoresistance sensors
US8483800B2 (en) * 2008-11-29 2013-07-09 General Electric Company Surgical navigation enabled imaging table environment
US20100249571A1 (en) * 2009-03-31 2010-09-30 General Electric Company Surgical navigation system with wireless magnetoresistance tracking sensors
JP5392108B2 (ja) 2010-01-21 2014-01-22 大同特殊鋼株式会社 薄膜磁気センサ及びその製造方法
WO2012105459A1 (ja) * 2011-02-01 2012-08-09 公立大学法人大阪市立大学 電力計測装置
US9207292B2 (en) * 2011-02-02 2015-12-08 Infineon Technologies Ag Magnetoresistive device and method for manufacturing the same
JP5429717B2 (ja) * 2011-03-07 2014-02-26 国立大学法人名古屋大学 磁気検出装置
JP5979214B2 (ja) * 2012-02-13 2016-08-24 株式会社村田製作所 磁気センサ装置
CN102937705B (zh) * 2012-11-20 2015-07-08 重庆大学 复合结构的直流磁传感器
EP2746795B1 (de) * 2012-12-20 2015-10-07 Alstom Technology Ltd Vorrichtung und Verfahren zum Messen des Magnetfeldes im Luftspalt einer Elektromaschine
CN103383441B (zh) * 2013-05-10 2016-05-11 安徽大学 一种数字式自旋阀磁场传感器及其制备技术
CN103424719B (zh) * 2013-07-10 2015-09-09 中北大学 一种基于纳米磁颗粒的磁矢量敏感元件及其制造方法
CN103901363B (zh) * 2013-09-10 2017-03-15 江苏多维科技有限公司 一种单芯片z轴线性磁电阻传感器
CN107037381A (zh) * 2015-12-29 2017-08-11 爱盛科技股份有限公司 磁场感测装置及其感测方法
JP6583208B2 (ja) * 2016-10-14 2019-10-02 株式会社デンソー 磁気検出素子
JP6438930B2 (ja) * 2016-12-06 2018-12-19 Tdk株式会社 磁場検出装置
JP2018096895A (ja) * 2016-12-15 2018-06-21 Tdk株式会社 磁場検出装置
CN106885997B (zh) * 2017-02-20 2019-10-01 上海微小卫星工程中心 地磁场中进行星载磁强计干扰补偿的方法
JP6913617B2 (ja) * 2017-12-01 2021-08-04 昭和電工株式会社 磁気センサ、計測装置及び磁気センサの製造方法
CN110780243A (zh) * 2019-11-19 2020-02-11 中国电子科技集团公司第四十九研究所 用于水下导航的高灵敏度微型磁传感单元、含有该传感单元的传感器及传感单元的制备方法
JP2021103145A (ja) * 2019-12-25 2021-07-15 昭和電工株式会社 磁気センサ
US11719772B2 (en) * 2020-04-01 2023-08-08 Analog Devices International Unlimited Company AMR (XMR) sensor with increased linear range
JP7734098B2 (ja) * 2022-02-17 2025-09-04 Tdk株式会社 磁気センサ
CN115307772A (zh) * 2022-07-26 2022-11-08 中国计量大学 一种利用巨磁阻进行瞬时温度测量的装置及方法
CN115963437B (zh) * 2022-12-21 2023-10-20 南方电网数字电网研究院有限公司 多量程磁传感器、磁场测量方法及导体制备方法
CN119619925B (zh) * 2024-12-09 2025-11-11 深圳技术大学 一种微弱磁场测量仪器及其测量方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4312473B1 (de) * 1963-02-13 1968-05-27
JPH0688635B2 (ja) 1987-10-29 1994-11-09 株式会社タツノ・メカトロニクス 給油装置
JPH06148301A (ja) * 1992-05-15 1994-05-27 Fujitsu Ltd 磁気センサ
US5552949A (en) * 1993-03-03 1996-09-03 Kabushiki Kaisha Toshiba Magnetoresistance effect element with improved antiferromagnetic layer
JP3305445B2 (ja) * 1993-07-30 2002-07-22 エヌイーシートーキン株式会社 回線電流検出用電流検出器
US5475304A (en) * 1993-10-01 1995-12-12 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall
US5422621A (en) * 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
JPH0875835A (ja) * 1994-09-09 1996-03-22 Mitsumi Electric Co Ltd 磁気インピーダンス素子および磁気検出回路
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
JPH0933257A (ja) * 1995-07-21 1997-02-07 Tokin Corp 磁気方位センサ
JP3461999B2 (ja) * 1996-03-28 2003-10-27 株式会社東芝 磁気抵抗効果素子
DE19614460A1 (de) * 1996-04-12 1997-10-16 Bosch Gmbh Robert Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor
US6184680B1 (en) * 1997-03-28 2001-02-06 Tdk Corporation Magnetic field sensor with components formed on a flexible substrate
JPH1124599A (ja) * 1997-07-07 1999-01-29 Toshiba Corp 投射型液晶表示装置
EP0899798A3 (de) * 1997-08-28 2000-01-12 Alps Electric Co., Ltd. Magnetoimpedanz-Element und Magnetkopf, Dünnfilmmagnetkopf, Azimuthfühler und Autokompensator unter Verwendung dieses Elements
JP3640230B2 (ja) * 1997-09-04 2005-04-20 財団法人電気磁気材料研究所 薄膜磁界センサ
JP4047955B2 (ja) * 1997-10-01 2008-02-13 ミネベア株式会社 磁気インピーダンスセンサ
US6232775B1 (en) * 1997-12-26 2001-05-15 Alps Electric Co., Ltd Magneto-impedance element, and azimuth sensor, autocanceler and magnetic head using the same
JP3466470B2 (ja) * 1998-03-18 2003-11-10 財団法人電気磁気材料研究所 薄膜磁気抵抗素子
JP3456409B2 (ja) * 1998-03-23 2003-10-14 Ｔｄｋ株式会社 薄膜磁気ヘッドの製造方法
US6472868B1 (en) * 1998-08-05 2002-10-29 Minebea Co., Ltd. Magnetic impedance element having at least two thin film-magnetic cores
JP2000055997A (ja) * 1998-08-05 2000-02-25 Tdk Corp 磁気センサ装置および電流センサ装置
JP2002522866A (ja) * 1998-08-14 2002-07-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピントンネル接合素子を具える磁界センサ
EP0989411A3 (de) * 1998-09-25 2004-10-06 Alps Electric Co., Ltd. Magnetoimpedanzeffekt-Element

Also Published As

Publication number Publication date
EP1329735A1 (de) 2003-07-23
EP1329735B1 (de) 2009-06-17
KR100687513B1 (ko) 2007-02-27
KR20020089317A (ko) 2002-11-29
CN100403048C (zh) 2008-07-16
DE60139017D1 (de) 2009-07-30
CN1394284A (zh) 2003-01-29
EP1329735A4 (de) 2005-05-11
WO2002037131A1 (en) 2002-05-10
TW550394B (en) 2003-09-01
US6642714B2 (en) 2003-11-04
US20030042902A1 (en) 2003-03-06

Similar Documents

Publication Publication Date Title
DE60139017D1 (de) Dünnfilm-magnetfeldsensor
US8519703B2 (en) Magnetic sensor device and method of determining resistance values
DE50215023D1 (de) Magnetfeldsensor mit einem hallelement
JPH038482B2 (de)
ATE448487T1 (de) Magnetfeldempfindliche sensoranordnung
US2769340A (en) Room temperature compensating circuits for pyrometers
US12442698B2 (en) Strain sensor
JP3373603B2 (ja) センサ用ブリッジ回路
KR20230079974A (ko) 박막 자기저항 센서의 구동 방법
RU2216822C1 (ru) Магниторезистивный датчик
RU1798744C (ru) Устройство дл измерени магнитного пол
KR20090019947A (ko) 듀얼 형상 방법을 적용한 휴대용 4탐침 면저항 측정장치
KR900000980B1 (ko) 자기저항소자를 이용한 각도 측정 장치 및 패턴 형성 방법
Thulin Double bridge for resistance thermometry using fixed ratio arms
JPH0486524A (ja) 液面レベル検出器
JPS6328615Y2 (de)
US20050088175A1 (en) Permalloy magnetization reversal sensor
FI71198B (fi) Halvledaromvandlare foer spaenningsmaetare
US10365241B2 (en) Sensing system for a humidity sensor
WO2001067077A1 (fr) Procede et appareil de mesure de la dilatation thermique, et structure conçue par voie thermique
SU1719924A1 (ru) Термоэлектрический термометр
JPH04294201A (ja) 変位検出装置
Reischl et al. Programmable linear magnetic Hall-effect sensor with excellent accuracy
KR870006731A (ko) 엔코우더용의 개선된 자기 저항기형 센서
JPH03144387A (ja) 磁気抵抗効果素子

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties