WO2004088834A1 - 温度変動を改善するバラクタ容量 - Google Patents

温度変動を改善するバラクタ容量 Download PDF

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Publication number
WO2004088834A1
WO2004088834A1 PCT/JP2003/003893 JP0303893W WO2004088834A1 WO 2004088834 A1 WO2004088834 A1 WO 2004088834A1 JP 0303893 W JP0303893 W JP 0303893W WO 2004088834 A1 WO2004088834 A1 WO 2004088834A1
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Prior art keywords
capacitance
varactor
temperature
variable
poly
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PCT/JP2003/003893
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English (en)
French (fr)
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Minoru Horinaka
Takuji Yamamoto
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Fujitsu Limited
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Publication of WO2004088834A1 publication Critical patent/WO2004088834A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1271—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the frequency being controlled by a control current, i.e. current controlled oscillators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range

Definitions

  • the present invention relates to a varactor capacitance used in a variable frequency LC oscillation circuit provided in an IC used for a communication device or the like.
  • the parameter capacitance has the characteristic that the capacitance varies depending on the bias voltage, and is often used in a variable frequency LC oscillation circuit (Fig. 1). As shown in Fig. 1, when Vdd ⁇ (Vdd-0.5V) is applied to Vcont (Vsd), the inductor capacitance changes as shown in Fig. 2 and the oscillation frequency of the LC oscillation circuit can be varied. .
  • the varactor capacitance used in the LC oscillation circuit includes
  • variable capacitance characteristic of the Poly-Nwell capacitor is as shown in Fig. 3.
  • Vcont-2 Vdd-(Vdd-) Vcont-2 Vdd-(Vdd-
  • the variable width of the capacitance that can be changed by 0.5V) is narrowed, and the variable width of the oscillation frequency of the LC oscillation circuit is narrowed.
  • Patent Document 1
  • Patent Document 2
  • each Vcont (Vsd) is differentially controlled.
  • the offset potential is differentially controlled, focusing on the fact that the characteristics with respect to the offset potential are opposite characteristics between the Poly-Nwell capacitance and the Poly-Pwell capacitance.
  • control can be simplified, and a parameter capacitor having a desired variable capacitance even if there is a temperature fluctuation can be created ( ( Figure 8).
  • the temperature is monitored by means such as a temperature monitor.
  • the current of the current source is reduced to reduce the capacity of the Poly-Nwell capacitance, and the offset potential is reduced to the Poly-Pwell capacitance.
  • the temperature fluctuation is improved by providing a means for providing the temperature and increasing the offset potential (FIG. 9).
  • the opposite operation is performed at low tones.
  • the temperature is monitored by means such as a temperature monitor, and when the temperature is high, the capacity of the poly-pwell capacitance is reduced by increasing the current of the current source, and the offset potential is reduced in the poly-nwell capacitance.
  • the temperature fluctuation is improved by providing a means for providing the temperature and lowering the offset potential (FIG. 10).
  • the opposite operation is performed at low tones.
  • variable frequency LC resonance circuit the above-mentioned parameter capacitance is used, so that a wide frequency variable width can be realized even when the temperature fluctuates (Fig. 11).
  • the differential circuit component is shared with PLLamp.
  • Figure 1 is a diagram of a variable frequency LC oscillator circuit
  • Fig. 2 is a graph showing the variable characteristics of the palacta capacity
  • Figure 3 is a graph showing the variable capacitance characteristics of a Poly-Nwell capacitor:
  • Figure 4 is a graph showing the variable capacitance characteristics of the Poly-Pwell capacitance
  • FIG. 5 shows a first embodiment of the present invention
  • FIG. 6 is a diagram showing a second embodiment of the present invention.
  • FIG. 7 is a diagram showing a third embodiment of the present invention.
  • FIG. 8 is a diagram showing a fourth embodiment of the present invention.
  • FIG. 9 is a diagram showing a fifth embodiment of the present invention.
  • FIG. 10 is a diagram showing a sixth embodiment of the present invention.
  • FIG. 11 is a diagram showing a seventh embodiment of the present invention.
  • FIG. 12 is a diagram showing an eighth embodiment of the present invention.
  • the oscillating frequency of the LC oscillation circuit can be changed by varying the varactor capacitance (an example of the variable frequency LC resonance circuit using the varactor capacitance of claim 1 in FIG. 11).
  • the temperature fluctuation can be achieved by combining two parameter capacitors having a high Q value, a wide variable range, a constant conversion gain (CZV), and reverse characteristics.
  • a varactor capacitance with a wide variable capacitance width can be realized, and a variable frequency LC oscillator circuit that can obtain a desired frequency even when the temperature fluctuates can be obtained. This greatly contributes to the performance improvement of large capacity (ultra high speed) communication equipment.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

Poly−Nwell 容量をPoly−Pwell 容量が逆特性であることに着目し、Poly−Nwell容量にその逆特性を有するPoly−Pwell 容量を組み合わせ、それぞれのVcont(Vsd)を差動制御する。

Description

明 細 書 温度変動を改善するパラクタ容量 技術分野
本発明は、 通信機器等に用いられる IC内に設ける周波数可変型 LC 発振回路に用いられるバラク タ容量に関する。 背景技術
パラクタ容量は、 パイァス電圧によ り容量が可変する特性があり 、 しばしば周波数可変型 LC発振回路に用いられる （図 1 ) 。 図 1 に ぉレヽて、 Vcont(Vsd)に Vdd 〜 （Vdd — 0.5V) を印加すると、 ノ ラ クタ容量が図 2のよ うに変化し、 LC発振回路の発振周波数を可変す ることができる。
LC発振回路に用いられるバラクタ容量には、
• Qが高い （寄生抵抗が小さい）
• 可変範囲が広い
• 変換利得 （CZV) が一定
これらの特性が求められ、 Poly-Nwell 容量が有望である。
しかし、 Poly— Nwell 容量の容量可変特性は図 3のよ うな特性で あり、 これを図 1の周波数可変型 LC発振回路に用いた場合、 温度変 動によ り、 Vcont 二 Vdd 〜 （Vdd - 0.5V) で可変できる容量可変 幅が狭まり、 LC発振回路の発振周波数可変幅を狭めてしまう。
特許文献 1
特開昭 54— 111740
特許文献 2
実開平 6 -41223 発明の開示
Poly— Nwell 容量と Poly— Pwell 容量が逆特性であることに着目 し、 Poly— Nwell 容量にその逆特性を有する Poly— Pwel 1 容量を組 み合わせる。
Poly— Nwell 容量を周波数可変型 LC発振回路に用いた場合、 Vcon t =Vdd 〜 （Vdd — 0.5V) で可変できる容量可変幅は、 高温時に 狭く、 低音時には広い。 一方、 Poly— Pwell 容量は、 Poly— Nwell 容量の逆特性を有し、 周波数可変型 LC発振回路に用いた場合、 Vcon t =Vdd 〜 （Vdd — 0.5V) で可変できる容量可変幅は、 高温時に 広く、 低音時には狭い （図 4 ) 。
これらの特性に着目 し、 逆特性を有する Poly— Nwell 容量と Poly -Pwell 容量を組み合わせることによ り、 温度変動があっても所望 の容量可変幅を有するパラクタ容量を作ることができる （図 5 — ( a ) 、 図 5 — ( b ) ) 。
上記において、 Poly—Nwell 容量と Poly— Pwell 容量が逆特性で あることに着目 し、 それぞれの Vcont(Vsd)を差動制御する。
このよ う に差動回路を組合せることにより、 制御を簡易化すると 共に、 温度変動があっても所望も容量可変幅を有するパラクタ容量 を作ることができる （図 6 ) 。
上記において、 差動電位それぞれにオフセッ ト電位を与える手段 を設け、 温度モニタ等の手段によ り温度を監視し、 高温時には Poly -Nwell 容量のオフセッ ト電位を上げ、 Poly— Pwell 容量のオフセ ッ ト電位を下げることによ り、 温度変動を改善する （図 7 ) 。 低音 時にはその反対の動作をさせる。
上記において、 オフセッ ト電位に対しての特性が、 Poly—Nwell 容量と Poly— Pwell 容量で逆特性であることに着目 し、 オフセッ ト 電位を差動制御する。 このようにオフセッ ト電位に対しても差動回路を組合せることに よ り、 制御を簡易化すると共に、 温度変動があっても所望も容量可 変幅を有するパラクタ容量を作ることができる （図 8 ) 。
上記において、 温度モニタ等の手段によ り温度を監視し、 高温時 には電流源の電流を小さくすることによ り Poly— Nwell 容量の容量 を下げ、 Poly— Pwell 容量にはオフセッ ト電位を与える手段を設け 、 オフセッ ト電位を上げるこ とによ り、 温度変動を改善する （図 9 ) 。 低音時にはその反対の動作をさせる。
上記において、 温度モニタ等の手段によ り温度を監視し、 高温時 には電流源の電流を大きくすることによ り Poly— Pwell 容量の容量 を下げ、 Poly— Nwell 容量にはオフセッ ト電位を与える手段を設け 、 オフセッ ト電位を下げることによ り、 温度変動を改善する （図 10 ) 。 低音時にはその反対の動作をさせる。
周波数可変型 LC共振回路において、 上記のパラクタ容量を用いる これによ り、 温度変動時にも広い周波数可変幅を実現できる （図 11) 。
上記において、 差動回路構成部を PLLampと共有する。
これにより、 差動制御部のノイズを抑圧でき、 CNR特性のよい周 波数可変型 LC共振回路を作ることが可能となる （図 12) 。 図面の簡単な説明
図 1 は周波数可変型 LC発振回路の図 ；
図 2はパラクタ容量の容量可変特性を示すグラフ ；
図 3は Poly— Nwell 容量の容量可変特性を示すグラフ ：
図 4は Poly— Pwell 容量の容量可変特性を示すグラフ ；
図 5は本発明の第 1の実施例を示す図 ； 図 6は本発明の第 2の実施例を示す図
図 7は本発明の第 3の実施例を示す図
図 8は本発明の第 4の実施例を示す図
図 9は本発明の第 5の実施例を示す図
図 10は本発明の第 6の実施例を示す図
図 11は本発明の第 7の実施例を示す図
図 12は本発明の第 8の実施例を示す図 発明を実施するための最良の形態
図 5 — ( a ) において、 温度が高くなつた場合、 Poly— Nwell 容 量は Vcont =Vdd 時の容量以下下げられなくなるが （図 3 ) 、 Poly -Pwell 容量は逆特性を有する為、 Vcont電位を下げれば容量を下 げることが可能である。 温度が低くなつた場合は、 逆の動作をする 図 6において、 温度が高く なつた場合、 Vcont nを上げると同時 に Vcont pを下げると （差動動作） 、 前述と同様な動作が実現.でき る。 温度が低くなつた場合は、 逆の動作をする。
図 7において、 温度が高くなつた場合、 素子 Aによ り 十のオフセ ッ ト電位を与え Vcont nを上げると容量が下がるが、 Vcont = Vdd 時の容量以下下げられなくなる。 そこで素子 Bによ り 一のオフセッ ト電位を与え Vcont pを下げるとさらに容量を下げることが可能で ある。 温度が低くなつた場合は、 逆の動作をする。 これらの作業を 温度モニタによ り監視、 制御を行う。
図 8において、 温度が高くなつた場合、 差動回路 Aによ り 十のォ フセッ ト電位を与え Vcont nを上げると同時に一のオフセッ ト電位 を与え Vcont pを下げると （差動動作） 、 前述と同様な動作が実現 できる。 温度が低くなつた場合は、 逆の動作をする。 これらの作業 を温度モユタによ り監視、 制御を行う。
図 9において、 温度が高くなつた場合、 電流源 Aによ り電流を小 さく し Vcont nを上げると容量が下がるが、 Vcont == Vdd 時の容量 以下下げられなく なる。 そこで素子 Bによ り一のオフセッ ト電位を 与え Vcont pを下げるとさ らに容量を下げることが可能である。 温 度が低くなつた場合は、 逆の動作をする。 これらの作業を温度モニ タにより監視、 制御を行う。
図 10において、 温度が高く なつた場合、 素子 Bによ り +のオフセ ッ ト電位を与え Vc ont nを上げると容量が下がるが、 Vcont = Vdd 時の容量以下下げられなくなる。 そこで電流源 Aによ り電流を大き く し Vcont pを下げるとさ らに容量を下げることが可能である。 温 度が低くなつた場合は、 逆の動作をする。 これらの作業を温度モニ タにより監視、 制御を行う。
前に述べたようにパラクタ容量を可変することによ り、 LC発振回 路の発振周波数を変えることができる （図 11 請求項 1のパラクタ 容量を用いた周波数可変型 LC共振回路の一例） 。
前述のパラクタ容量の差動回路部を図 12の PLLamp部に取り込むと 、 PLLamp内のループフィルタによ り差動回路部のノイズが抑圧させ る。
以上述べたように、 本発明によれば、 Q値が高く、 可変範囲が広 く、 変換利得 （C Z V ) が一定な、 逆特性を有する 2つのパラクタ 容量を組み合せることによ り、 温度変動時にも広い容量可変幅を有 するパラクタ容量が実現でき、 温度変動時でも所望の周波数が得ら れる周波数可変型 LC発振回路を得られる。 これは、 大容量 （超高速 ) 通信機器の性能向上に寄与するところが大きい。

Claims

請 求 の 範 囲
1 . 周波数可変型 LC発振回路で用いられるバラクタ容量の温度変 動による挟容量可変特性を、 その逆特性を有するバラクタ容量を組 み合わせることによ り改善するパラクタ容量。
2 . 請求項 1 において、 差動回路を設けて逆特性を有する 2つの バラクタ容量を差動制御することにより、 制御を簡易化すると共に 、 温度変動による挟容量可変特性を改善するバラクタ容量。
3 . 請求項 2において、 温度モニタを設けて逆特性を有する 2つ のバラクタ容量にオフセ ッ ト電位を与え、 温度変動による挟容量可 変特性を改善するパラクタ容量。
4 . 請求項 2において、 温度モニタおよび差動回路を設けてを設 けて逆特性を有する 2つのパラクタ容量にオフセッ ト電位を差動で 与え、 温度変動による挟容量可変特性を改善するバラクタ容量。
5 . 請求項 2において、 温度モニタを設けて差動回路の電流源電 流を制御して逆特性を有する 2つのパラクタ容量のパイァス電圧を 可変すると共に、 一方のパラクタ容量 （Po ly— Pwe l l容量） にオフ セッ ト電位を与え、 温度変動による挟容量可変特性を改善するバラ クタ容量。
6 . 請求項 2において、 温度モニタを設けて差動回路の電流源電 流を制御して逆特性を有する 2つのパラクタ容量のバイ アス電圧を 可変すると共に、 一方のパラクタ容量 （Po ly— Nwe l l容量） にオフ セッ ト電位を与え、 温度変動による挟容量可変特性を改善するパラ クタ容量。
7 . 請求項 1 〜 6のパラクタ容量を用いることによ り、 温度変動 時にも広い周波数可変幅を有する周波数可変型 LC発振回路。
8 . 請求項 1〜 6において、 差動制御部を PLLampに取り込むこと により、 CNR特性を改善すると共に、 温度変動時にも広い周波数可 変幅を有する周波数可変型 LC発振回路、 及び PLLamp。
PCT/JP2003/003893 2003-03-27 2003-03-27 温度変動を改善するバラクタ容量 WO2004088834A1 (ja)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125253U (ja) * 1983-02-15 1984-08-23 松下電工株式会社 カウンタ−
JPH0478220A (ja) * 1990-07-20 1992-03-12 Samsung Electron Co Ltd 信号遅延回路
JPH10107598A (ja) * 1996-09-06 1998-04-24 Samsung Electron Co Ltd 遅延回路
JP2001060828A (ja) * 1999-06-17 2001-03-06 Toyo Commun Equip Co Ltd 温度補償発振器
JP2001196853A (ja) * 2000-01-14 2001-07-19 Internatl Business Mach Corp <Ibm> 帯域スイッチされる集積電圧制御発振器
JP2001251171A (ja) * 2000-03-08 2001-09-14 Nec Corp 遅延回路
JP2002190709A (ja) * 2000-12-22 2002-07-05 Kawasaki Microelectronics Kk 電圧制御発振回路

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125253U (ja) * 1983-02-15 1984-08-23 松下電工株式会社 カウンタ−
JPH0478220A (ja) * 1990-07-20 1992-03-12 Samsung Electron Co Ltd 信号遅延回路
JPH10107598A (ja) * 1996-09-06 1998-04-24 Samsung Electron Co Ltd 遅延回路
JP2001060828A (ja) * 1999-06-17 2001-03-06 Toyo Commun Equip Co Ltd 温度補償発振器
JP2001196853A (ja) * 2000-01-14 2001-07-19 Internatl Business Mach Corp <Ibm> 帯域スイッチされる集積電圧制御発振器
JP2001251171A (ja) * 2000-03-08 2001-09-14 Nec Corp 遅延回路
JP2002190709A (ja) * 2000-12-22 2002-07-05 Kawasaki Microelectronics Kk 電圧制御発振回路

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