WO2004077547A3 - Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen - Google Patents

Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen Download PDF

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Publication number
WO2004077547A3
WO2004077547A3 PCT/EP2004/000574 EP2004000574W WO2004077547A3 WO 2004077547 A3 WO2004077547 A3 WO 2004077547A3 EP 2004000574 W EP2004000574 W EP 2004000574W WO 2004077547 A3 WO2004077547 A3 WO 2004077547A3
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WO
WIPO (PCT)
Prior art keywords
connection system
internal connection
power semiconductors
area terminals
terminals
Prior art date
Application number
PCT/EP2004/000574
Other languages
English (en)
French (fr)
Other versions
WO2004077547A2 (de
Inventor
Norbert Seliger
Karl Weidner
Joerg Zapf
Original Assignee
Siemens Ag
Norbert Seliger
Karl Weidner
Joerg Zapf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Norbert Seliger, Karl Weidner, Joerg Zapf filed Critical Siemens Ag
Priority to US10/547,119 priority Critical patent/US7427532B2/en
Priority to EP04704561A priority patent/EP1597756A2/de
Publication of WO2004077547A2 publication Critical patent/WO2004077547A2/de
Publication of WO2004077547A3 publication Critical patent/WO2004077547A3/de

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
  • Wire Bonding (AREA)

Abstract

Auf einem Substrat (1) und einem darauf angeordneten Bauelement (2) wird eine Schicht aus elektrisch isolierendem Material (3) so aufgebracht wird, dass die sie der aus Substrat und Bauelement gebildeten Oberflächenkontur folgt.
PCT/EP2004/000574 2003-02-28 2004-01-23 Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen WO2004077547A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/547,119 US7427532B2 (en) 2003-02-28 2004-01-23 Method of manufacturing a device having a contacting structure
EP04704561A EP1597756A2 (de) 2003-02-28 2004-01-23 Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10308977.2 2003-02-28
DE10308977 2003-02-28

Publications (2)

Publication Number Publication Date
WO2004077547A2 WO2004077547A2 (de) 2004-09-10
WO2004077547A3 true WO2004077547A3 (de) 2005-05-19

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PCT/EP2004/000574 WO2004077547A2 (de) 2003-02-28 2004-01-23 Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen

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Country Link
US (1) US7427532B2 (de)
EP (1) EP1597756A2 (de)
CN (1) CN100468670C (de)
WO (1) WO2004077547A2 (de)

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DE10308928B4 (de) * 2003-02-28 2009-06-18 Siemens Ag Verfahren zum Herstellen freitragender Kontaktierungsstrukturen eines ungehäusten Bauelements
EP1597757A2 (de) * 2003-02-28 2005-11-23 Siemens Aktiengesellschaft Verbindungstechnik für leistungshalbleiter mit einer der oberflächenkontur folgenden schicht aus elektrisch isolierendem material
DE102004057497B4 (de) * 2004-11-29 2012-01-12 Siemens Ag Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Wärmeaustauschvorrichtung sowie Anordnung eines Bauelements und der Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Anordnung
DE102004057494A1 (de) * 2004-11-29 2006-06-08 Siemens Ag Metallisierte Folie zur flächigen Kontaktierung
US7727813B2 (en) 2007-11-26 2010-06-01 Infineon Technologies Ag Method for making a device including placing a semiconductor chip on a substrate
US7982292B2 (en) * 2008-08-25 2011-07-19 Infineon Technologies Ag Semiconductor device
DE102009036418B4 (de) * 2009-08-06 2011-06-22 Siemens Aktiengesellschaft, 80333 Wellenleiter, insbesondere beim Dielektrikum-Wand-Beschleuniger
DE102018214778A1 (de) * 2018-08-30 2020-03-05 Siemens Aktiengesellschaft Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul

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WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

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CN100468670C (zh) 2009-03-11
WO2004077547A2 (de) 2004-09-10
EP1597756A2 (de) 2005-11-23

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