WO2004075405A3 - Betrieb einer halbbrücke, insbesondere einer feldeffekttransistor-halbbrücke - Google Patents

Betrieb einer halbbrücke, insbesondere einer feldeffekttransistor-halbbrücke Download PDF

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Publication number
WO2004075405A3
WO2004075405A3 PCT/EP2004/001443 EP2004001443W WO2004075405A3 WO 2004075405 A3 WO2004075405 A3 WO 2004075405A3 EP 2004001443 W EP2004001443 W EP 2004001443W WO 2004075405 A3 WO2004075405 A3 WO 2004075405A3
Authority
WO
WIPO (PCT)
Prior art keywords
bridge
lead
circuit arrangement
terminal connection
electrically connecting
Prior art date
Application number
PCT/EP2004/001443
Other languages
English (en)
French (fr)
Other versions
WO2004075405A2 (de
Inventor
Martin Goetzenberger
Michael Kirchberger
Wolfgang Speigl
Original Assignee
Siemens Ag
Martin Goetzenberger
Michael Kirchberger
Wolfgang Speigl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Martin Goetzenberger, Michael Kirchberger, Wolfgang Speigl filed Critical Siemens Ag
Priority to US10/546,075 priority Critical patent/US7332942B2/en
Priority to EP04711361A priority patent/EP1620947A2/de
Publication of WO2004075405A2 publication Critical patent/WO2004075405A2/de
Publication of WO2004075405A3 publication Critical patent/WO2004075405A3/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)

Abstract

Die Erfindung betrifft eine Schaltungsanordnung (1) zum Steuern eines Betriebes einer Halbbrücke (13) durch Pulsweitenmodulation, insbesondere im Synchrongleichrichtungsbetrieb, mit einem ersten Anschluss (23, 25) zum elektrischen Anschließen der Schaltungsanordnung (1) an einen isolierten Steueranschluss eines Brückenventils (15, 17) der Halbbrücke (13), mit einem zweiten Anschluss (20, 22) zum elektrischen Anschließen der Schaltungsanordnung (1) an einen weiteren Anschluss des Brückenventils (15, 17), mit einer elektrischen Leitung (16, 18), die den ersten Anschluss (23, 25) und den zweiten Anschluss (20, 22) elektrisch miteinander verbindet, und mit einem durch pulsweitenmodulierte Signale ein- und ausschaltbaren elektrischen Ventil (43, 45), wobei das elektrische Ventil (43, 45) in der elektrischen Leitung (16, 18) angeordnet ist, sodass ein Stromfluss durch die Leitung (16, 18) freigebbar und sperrbar ist. Es wird vorgeschlagen, zumindest ein induktives Bauelement (35, 37) in der Leitung (16, 18) vorzusehen, sodass ein zeitlicher Verlauf eines elektrischen Stromflusses in der Leitung (16, 18) zusätzlich zu einem Einfluss einer etwaig vorhandenen parasitären Induktivität durch eine Induktivität des induktiven Bauelements (35, 37) beeinflusst wird.
PCT/EP2004/001443 2003-02-18 2004-02-16 Betrieb einer halbbrücke, insbesondere einer feldeffekttransistor-halbbrücke WO2004075405A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/546,075 US7332942B2 (en) 2003-02-18 2004-02-16 Operation of a half-bridge, in particular a field-effect transistor half-bridge
EP04711361A EP1620947A2 (de) 2003-02-18 2004-02-16 Betrieb einer halbbrücke, insbesondere einer feldeffekttransistor-halbbrücke

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10306809.0 2003-02-18
DE10306809A DE10306809A1 (de) 2003-02-18 2003-02-18 Betrieb einer Halbbrücke, insbesondere einer Feldeffekttransistor-Halbbrücke

Publications (2)

Publication Number Publication Date
WO2004075405A2 WO2004075405A2 (de) 2004-09-02
WO2004075405A3 true WO2004075405A3 (de) 2006-09-14

Family

ID=32797495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/001443 WO2004075405A2 (de) 2003-02-18 2004-02-16 Betrieb einer halbbrücke, insbesondere einer feldeffekttransistor-halbbrücke

Country Status (4)

Country Link
US (1) US7332942B2 (de)
EP (1) EP1620947A2 (de)
DE (1) DE10306809A1 (de)
WO (1) WO2004075405A2 (de)

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JP5047653B2 (ja) * 2007-03-13 2012-10-10 三菱電機株式会社 半導体装置
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JP4380726B2 (ja) * 2007-04-25 2009-12-09 株式会社デンソー ブリッジ回路における縦型ｍｏｓｆｅｔ制御方法
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
US7986172B2 (en) * 2009-08-31 2011-07-26 Freescale Semiconductor, Inc. Switching circuit with gate driver having precharge period and method therefor
US9655221B2 (en) 2013-08-19 2017-05-16 Eagle Harbor Technologies, Inc. High frequency, repetitive, compact toroid-generation for radiation production
US9706630B2 (en) 2014-02-28 2017-07-11 Eagle Harbor Technologies, Inc. Galvanically isolated output variable pulse generator disclosure
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
US10790816B2 (en) 2014-01-27 2020-09-29 Eagle Harbor Technologies, Inc. Solid-state replacement for tube-based modulators
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11542927B2 (en) 2015-05-04 2023-01-03 Eagle Harbor Technologies, Inc. Low pressure dielectric barrier discharge plasma thruster
US10038442B2 (en) * 2015-06-30 2018-07-31 Fronius International Gmbh Circuit arrangement for controlling a transistor
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US9994110B2 (en) * 2016-08-30 2018-06-12 Ford Global Technologies, Llc Dual gate solid state devices to reduce switching loss
EP3316463A1 (de) * 2016-10-27 2018-05-02 Siemens Aktiengesellschaft Ändern eines schaltzustands einer schalt-halbbrücke
US10122294B2 (en) * 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
CN110692188B (zh) 2017-02-07 2022-09-09 鹰港科技有限公司 变压器谐振转换器
KR102601455B1 (ko) 2017-08-25 2023-11-13 이글 하버 테크놀로지스, 인코포레이티드 나노초 펄스를 이용한 임의의 파형 발생
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
KR20230025034A (ko) 2018-08-10 2023-02-21 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
CN113906677A (zh) 2019-01-08 2022-01-07 鹰港科技有限公司 纳秒脉冲发生器电路中的高效能量恢复
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
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Also Published As

Publication number Publication date
US7332942B2 (en) 2008-02-19
DE10306809A1 (de) 2004-09-02
WO2004075405A2 (de) 2004-09-02
EP1620947A2 (de) 2006-02-01
US20070115705A1 (en) 2007-05-24

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