Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
  • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
  • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K85/211—Fullerenes, e.g. C60
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K85/211—Fullerenes, e.g. C60
  • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• the invention relates to an organic-based photovoltaic element, in particular a solar cell with a photovoltaically active layer that absorbs in the blue region.
• organic solar cells based on polyalkylthiophene are also known.
• a typical cell structure of this photovoltaic element comprises the following layers: an anode, for example made of ITO (indium tin oxide), and a perforated layer made of a copolymer such as a mixture of PEDOT with PSS as the anion.
• anode for example made of ITO (indium tin oxide)
• a perforated layer made of a copolymer such as a mixture of PEDOT with PSS as the anion.
• P3AT.PCBM poly-3-hexylthiophene in a mixture with PhenylC 6 ⁇ -
• ButoxyMethoxy which is the photovoltaically active layer.
• the cathode layer is then still on this, for example made of a metal such as aluminum or a Ca / Ag alloy.
• the individual layers can differ, in particular both the electrodes and the acceptor (PCBM) can be made of a different material.
• PCBM acceptor
• CN-PPVs cyano-substituted PPVs
• any number of additions to the polythiophene are conceivable.
• the object of the invention is to provide a method by which the absorption maximum of a photovoltaically active layer can be shifted into the longer-wave region and / or an improvement in efficiency (eg by increasing the short-circuit current) can be achieved.
• the invention relates to a method for treating a photovoltaically active layer with a solvent and / or by tempering, characterized in that the photovoltaically active layer comes into contact with solvent molecules and / or is heated.
• the invention also relates to a photovoltaic element with a photovoltaically active layer which contains a mixture of polyalkylthiophene which absorbs in the deep red region.
• the photovoltaically active layer is preferably a polyalkylthiophene which is present in a mixture with an additive such as a fullerene, in particular a methanofullerene.
• an additive such as a fullerene, in particular a methanofullerene.
• Other possible additives instead of the fullerene would be e.g. B. inorganic nanoparticles based on CdTe (cadmium tellurium), CdS (cadmium sulfide), polymers with a high electron affinity such as.
• the photovoltaically active layer is exposed to a solvent vapor at room temperature. This can be done, for example, by passing (holding) the photovoltaically active layer over a vessel with solvent and / or by medium vapor is passed over the photovoltaically active layer.
• the photovoltaically active layer is exposed to the solvent vapor only for a very short time, that is to say less than a minute or, for example, only in the seconds or milliseconds range.
• the photovoltaically active layer is annealed at a temperature of at least 70 ° C., preferably approximately 80 ° C. or higher.
• the progress of the tempering can be followed by increasing the short-circuit current. Other combinations of temperature and time are conceivable, the process is considered complete as soon as the photovoltaic parameters no longer improve.
• the tempering can be carried out by introducing the photovoltaically active layer into a drying oven or onto a hotplate or the like. Treatment with solvent can also take place simultaneously with the tempering.
• Aromatic solvents such as xylene, toluene or the like can be used as solvents or halogen-containing solvents such as chloroform or the like.
• the choice of the suitable solvent depends on the mixture of the material forming the photovoltaically active layer.
• the effect of the solvent is, for example, that the solvent xylene, toluene, butanone and / or chloroform and / or another solvent or any mixture of these solvents at least partially dissolves and / or softens the polyalkyl thiophene.
• the photovoltaically active layer is produced in a conventional manner; according to the prior art, a varnished film is formed, for example, from a P3AT (poly-3-alkyl-thiophene) / PCBM (phenylC ⁇ iButoxymethoxy) solution or by conventional printing processes (screen printing, Fle - xo printing ...) applied.
• P3AT poly-3-alkyl-thiophene
• PCBM phenylC ⁇ iButoxymethoxy
• Figure 1 shows the observation of the effect of solvent vapors on the absorption of chloroform-coated P3AT films with and without fullerenes on glass: the triangles show a pure P3AT film on glass, the full squares a P3AT / PCBM film. It can be clearly observed that this film lacks the absorption contribution typical of the P3AT in the wavelength range around 550 nm. After the film has been exposed to chloroform vapor (open diamonds), its absorption behavior changes and the absorption characteristics typical of the P3AT can be observed again.
• Figure 2 Change in short-circuit current Isc (full squares) and efficiency (full circles) with the temperature at which the layer was annealed.
• the sample structure: ITO / PEDOT / P3HT: PCBM / Ca / Ag
• the electrical characteristics were measured in each case at room temperature under illumination with 70 mW / cm 2 white light from a xenon lamp. It can be seen that from a temperature of> 80 ° C the short-circuit current and thus the efficiency begins to increase.
• Figure 3 Current / voltage (I / V) - characteristic of temperature-treated cells, once before (full circles) and after (full squares) the treatment with solvent vapor.
• the increase in the short-circuit current (Isc) and the efficiency reflects the red shift in the absorption behavior (as shown in FIG. 1) of the cell.
• the absorption maximum of P3ATs is shifted by more than 100 nm into the blue spectral range. postponed. This increases the spectral mismatch of the solar cell to the solar spectrum.
• the invention solves the following problems: a.) Shifting the absorption of the P3AT / fullerene film back into the red spectral range by solvent annealing and b.) Increasing the efficiency of the solar cell by temperature annealing.
• Annealing is the treatment of a photovoltaically active layer in the context of this invention to achieve the object, that is to say to red shift the absorption maximum of the layer.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Chemical & Material Sciences (AREA)
• Nanotechnology (AREA)
• Electromagnetism (AREA)
• Mathematical Physics (AREA)
• Theoretical Computer Science (AREA)
• Crystallography & Structural Chemistry (AREA)
• Photovoltaic Devices (AREA)
• Electroluminescent Light Sources (AREA)

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Cited By (12)

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• 2003
  • 2003-09-03 WO PCT/DE2003/002929 patent/WO2004025746A2/de not_active Ceased
  • 2003-09-03 DE DE50306270T patent/DE50306270D1/de not_active Expired - Lifetime
  • 2003-09-03 US US10/524,964 patent/US7306968B2/en not_active Expired - Lifetime
  • 2003-09-03 EP EP03750316A patent/EP1535323B1/de not_active Expired - Lifetime
  • 2003-09-03 JP JP2004535001A patent/JP2005538555A/ja active Pending
  • 2003-09-03 CN CN03821159.9A patent/CN1682362A/zh active Pending
• 2011
  • 2011-02-28 JP JP2011043332A patent/JP5415468B2/ja not_active Expired - Fee Related

Non-Patent Citations (3)

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