JP2011135095A - 光起電活性層および有機性光起電素子の処理方法 - Google Patents
光起電活性層および有機性光起電素子の処理方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000013086 organic photovoltaic Methods 0.000 title description 2
- 239000002904 solvent Substances 0.000 claims abstract description 28
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 229910003472 fullerene Inorganic materials 0.000 claims description 9
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- JNGDCMHTNXRQQD-UHFFFAOYSA-N 3,6-dioxocyclohexa-1,4-diene-1,2,4,5-tetracarbonitrile Chemical compound O=C1C(C#N)=C(C#N)C(=O)C(C#N)=C1C#N JNGDCMHTNXRQQD-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000882 Ca alloy Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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Abstract
【解決手段】光起電活性層を溶媒分子に接触させることと、起電活性層を加熱することとによって、光起電活性層を処理する。
【選択図】図1
Description
特に知られているものとして、ポリアルキルチオフェン(P3AT)に基づく有機太陽電池である。この光起電素子に対する典型的なセル構造は次のような層を含む。例えばITO(酸化インジウム・スズ)からなるアノードの上に、アニオンとしてPSSを有するPEDOTの混合物などの共重合体の正孔伝導層が積層される。その上には、光起電活性層である、P3AT:PCBM[ポリ(3−ヘキシルチオフェン)とフェニルC61−ブトキシメトキシとの混合物]の層が設けられる。その上には、例えばアルミニウムまたはCa/Ag合金などの金属からなるカソード層が設けられる。しかしながら、個々の層は、この案とは異なるものであってもよく、特に、電極と受容体(PCBM)はいずれも別の材料で構成してもよい。例えば、シアン置換PPV(CN PPV)が、すでに受容体として使用されているが、ポリチオフェンに対する多くの添加物が任意で含まれていてもよい。
本発明の一実施形態において、光起電活性層を最低でも70℃、好ましくは約80℃以上でアニールする。アニーリングの進行は、短絡回路電流の増加によって監視することができる。その他の温度および時間の組み合わせも考えられ、光起電パラメータの増大が止まるとすぐにプロセスが終了するものと想定される。光起電活性層を乾燥機内またはホットプレートなどの上に置くことによって、アニーリングを実施することができる。溶媒処理を、アニーリングと同時に行ってもよい。
図1は、ガラス上に、フラーレンの共存または非共存下でクロロホルムでスピンコートしたP3AT薄膜の吸収に対して観察された溶媒蒸気の効果を示している。三角は、ガラス上の純粋なP3AT薄膜を表し、黒四角は、P3AT/PCBM薄膜を表す。この薄膜が、P3ATに典型的な550nm付近の波長範囲における吸収に寄与しないことが明確に示されている。薄膜を一旦クロロホルム蒸気に曝露すると(白菱形)、その吸収挙動が変化し、P3ATに典型的な吸収特性が再びはっきりと見られるようになる。
a)P3AT/フラーレン薄膜の吸収を、溶媒アニーリングによって赤色スペクトル領域に引き戻し、さらに
b)温度アニーリングによって太陽電池の効率を増加させる。
Claims (8)
- 溶媒およびアニーリングの少なくともいずれかによって光起電活性層を処理する方法であって、前記光起電活性層を溶媒分子に接触させること、および前記光起電活性層を加熱することの少なくともいずれかを特徴とする方法。
- 前記光起電活性層は、フラーレン、特にメタノフラーレンなどの添加物とともに、混合物中に存在するポリアルキルチオフェンであることを特徴とする請求項1に記載の方法。
- 前記光起電活性層は、溶媒蒸気に曝露されることを特徴とする請求項1および2のいずれかに記載の方法。
- 前記光起電活性層は、室温において前記溶媒蒸気に曝露されることを特徴とする請求項3に記載の方法。
- 前記光起電活性層は、1分未満の間、前記溶媒蒸気に曝露されることを特徴とする請求項1乃至4のいずれか1項に記載の方法。
- 前記溶媒、キシレン、トルエン、ブタノン、およびクロロホルム、およびさらなる溶媒および前記溶媒の任意の混合物の少なくともいずれかは、少なくとも部分的に前記ポリアルキルチオフェンを腐食または軟化させることを特徴とする請求項1乃至5のいずれか1項に記載の方法。
- 前記光起電活性層は、最低でも70℃の温度においてアニーリングすることを特徴とする請求項1乃至6のいずれか1項に記載の方法。
- 混合物中のポリアルキルチオフェンを含む光起電活性層を備えた光起電素子であって、光起電層が深紅領域に吸収を有することを特徴とする光起電素子。
Applications Claiming Priority (2)
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DE10241205 | 2002-09-05 | ||
DE10241205.7 | 2002-09-05 |
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JP2004535001A Division JP2005538555A (ja) | 2002-09-05 | 2003-09-03 | 光起電活性層および有機性光起電素子の処理方法 |
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JP2011135095A true JP2011135095A (ja) | 2011-07-07 |
JP2011135095A5 JP2011135095A5 (ja) | 2012-05-31 |
JP5415468B2 JP5415468B2 (ja) | 2014-02-12 |
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JP2004535001A Pending JP2005538555A (ja) | 2002-09-05 | 2003-09-03 | 光起電活性層および有機性光起電素子の処理方法 |
JP2011043332A Expired - Fee Related JP5415468B2 (ja) | 2002-09-05 | 2011-02-28 | 光起電活性層および有機性光起電素子の処理方法 |
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Country | Link |
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US (1) | US7306968B2 (ja) |
EP (1) | EP1535323B1 (ja) |
JP (2) | JP2005538555A (ja) |
CN (1) | CN1682362A (ja) |
DE (1) | DE50306270D1 (ja) |
WO (1) | WO2004025746A2 (ja) |
Families Citing this family (24)
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KR20070102661A (ko) * | 2004-09-24 | 2007-10-19 | 플렉스트로닉스, 인크 | 광기전 전지에서의 헤테로 원자를 갖는 위치 규칙적폴리(3-치환 티오펜) |
KR101102133B1 (ko) * | 2004-10-27 | 2012-01-02 | 삼성전자주식회사 | 박막 트랜지스터의 제조방법 및 그 방법에 의해서 제조되는 박막 트랜지스터를 포함하는 표시소자 |
EP1861881B1 (en) * | 2005-03-21 | 2017-09-06 | Merck Patent GmbH | Polymer photovoltaic cell |
EP1866982A2 (en) * | 2005-04-07 | 2007-12-19 | The Regents Of The University Of California | Highly efficient polymer solar cell by polymer self-organization |
WO2006130717A2 (en) * | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Effective organic solar cells based on triplet materials |
JP4991126B2 (ja) * | 2005-06-14 | 2012-08-01 | パナソニック株式会社 | 積層型有機太陽電池及びその製造方法 |
US20090134385A1 (en) * | 2005-06-16 | 2009-05-28 | Siemens Aktiengesellschaft | Organic Line Detector and Method for the Production Thereof |
EP1925044A2 (en) * | 2005-08-01 | 2008-05-28 | Plextronics, Inc. | Latent doping of conducting polymers |
JP5118296B2 (ja) * | 2005-10-19 | 2013-01-16 | パナソニック株式会社 | 積層型有機太陽電池 |
KR20080108475A (ko) * | 2006-02-24 | 2008-12-15 | 플렉스트로닉스, 인크 | 고성능 중합체 광전지 |
WO2007134616A1 (en) * | 2006-05-19 | 2007-11-29 | Interuniversitair Microelektronica Centrum Vzw | Method for the production of a layer of organic material |
SM200600027A (it) * | 2006-08-08 | 2008-02-13 | Stefano Segato | Preparazione fotovoltaica multistrato per la generazione di energia elettrica nonché' metodo di realizzazione ed applicazione |
US9112447B2 (en) * | 2006-11-03 | 2015-08-18 | Solera Laboratories, Inc. | Nano power cell and method of use |
US8319092B1 (en) | 2006-11-03 | 2012-11-27 | Solera Laboratories, Inc. | Nano power cell and method of use |
US7906724B2 (en) * | 2007-07-31 | 2011-03-15 | Agency For Science, Technology And Research | N-type conjugated materials based on 2-vinyl-4,5-dicyanoimidazoles and their use in organic photovoltaics |
TWI380490B (en) * | 2009-05-05 | 2012-12-21 | Univ Nat Chiao Tung | Organic photosensitive photoelectric device |
SM200900070B (it) * | 2009-08-07 | 2012-03-05 | Antonio Maroscia | Composizione fotovoltaica multistrato e metodo di realizzazione |
US20110048489A1 (en) * | 2009-09-01 | 2011-03-03 | Gabriel Karim M | Combined thermoelectric/photovoltaic device for high heat flux applications and method of making the same |
US20110048488A1 (en) * | 2009-09-01 | 2011-03-03 | Gabriel Karim M | Combined thermoelectric/photovoltaic device and method of making the same |
US20120216868A1 (en) * | 2009-10-30 | 2012-08-30 | Takahiro Seike | Manufacturing method of organic photovoltaic cell |
US9768402B2 (en) * | 2010-04-08 | 2017-09-19 | University Of Southern California | Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes |
CN102623642B (zh) * | 2012-03-22 | 2014-04-16 | 中国科学院长春应用化学研究所 | 聚合物太阳能电池的制备方法 |
JP6382781B2 (ja) * | 2015-09-15 | 2018-08-29 | 株式会社東芝 | 半導体素子の製造方法および製造装置 |
CN110518120B (zh) * | 2018-05-22 | 2021-04-06 | 中国科学院化学研究所 | 一种固体添加剂及其在有机太阳能电池中的应用 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS6316679A (ja) * | 1986-06-02 | 1988-01-23 | Agency Of Ind Science & Technol | 光起電力素子の製造方法 |
JPH0281479A (ja) * | 1988-09-16 | 1990-03-22 | Matsushita Electric Ind Co Ltd | 光起電力装置及びその製造方法 |
JPH05152594A (ja) * | 1991-10-01 | 1993-06-18 | Ricoh Co Ltd | 光起電力素子 |
JPH0774377A (ja) * | 1993-08-31 | 1995-03-17 | Kawamura Inst Of Chem Res | 光電変換素子 |
JPH0974238A (ja) * | 1995-09-07 | 1997-03-18 | Sumitomo Electric Ind Ltd | 光電流増倍素子 |
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2003
- 2003-09-03 US US10/524,964 patent/US7306968B2/en not_active Expired - Lifetime
- 2003-09-03 JP JP2004535001A patent/JP2005538555A/ja active Pending
- 2003-09-03 CN CN03821159.9A patent/CN1682362A/zh active Pending
- 2003-09-03 DE DE50306270T patent/DE50306270D1/de not_active Expired - Lifetime
- 2003-09-03 EP EP03750316A patent/EP1535323B1/de not_active Expired - Lifetime
- 2003-09-03 WO PCT/DE2003/002929 patent/WO2004025746A2/de active IP Right Grant
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- 2011-02-28 JP JP2011043332A patent/JP5415468B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6316679A (ja) * | 1986-06-02 | 1988-01-23 | Agency Of Ind Science & Technol | 光起電力素子の製造方法 |
JPH0281479A (ja) * | 1988-09-16 | 1990-03-22 | Matsushita Electric Ind Co Ltd | 光起電力装置及びその製造方法 |
JPH05152594A (ja) * | 1991-10-01 | 1993-06-18 | Ricoh Co Ltd | 光起電力素子 |
JPH0774377A (ja) * | 1993-08-31 | 1995-03-17 | Kawamura Inst Of Chem Res | 光電変換素子 |
JPH0974238A (ja) * | 1995-09-07 | 1997-03-18 | Sumitomo Electric Ind Ltd | 光電流増倍素子 |
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WO2004025746A3 (de) | 2004-09-16 |
US7306968B2 (en) | 2007-12-11 |
US20060105491A1 (en) | 2006-05-18 |
WO2004025746A2 (de) | 2004-03-25 |
EP1535323B1 (de) | 2007-01-10 |
EP1535323A2 (de) | 2005-06-01 |
JP2005538555A (ja) | 2005-12-15 |
JP5415468B2 (ja) | 2014-02-12 |
DE50306270D1 (de) | 2007-02-22 |
CN1682362A (zh) | 2005-10-12 |
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