WO2003083939A1 - Ensemble ecran magnetique et materiau d'etancheite pour element de memoire non volatile magnetique - Google Patents

Ensemble ecran magnetique et materiau d'etancheite pour element de memoire non volatile magnetique Download PDF

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Publication number
WO2003083939A1
WO2003083939A1 PCT/JP2003/003643 JP0303643W WO03083939A1 WO 2003083939 A1 WO2003083939 A1 WO 2003083939A1 JP 0303643 W JP0303643 W JP 0303643W WO 03083939 A1 WO03083939 A1 WO 03083939A1
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WO
WIPO (PCT)
Prior art keywords
magnetic
soft magnetic
mram element
shield package
memory element
Prior art date
Application number
PCT/JP2003/003643
Other languages
English (en)
Japanese (ja)
Inventor
Katsumi Okayama
Kaoru Kobayashi
Makoto Motoyoshi
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Publication of WO2003083939A1 publication Critical patent/WO2003083939A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a magnetic shield package and a sealing material for a magnetic nonvolatile memory element, and more particularly to a magnetic shield package and a sealing material for a magnetic nonvolatile memory element for suppressing the influence of an external magnetic field on the magnetic nonvolatile memory element.
  • a magnetic shield package and a sealing material for a magnetic nonvolatile memory element for suppressing the influence of an external magnetic field on the magnetic nonvolatile memory element.
  • MRAM magnetic random access memory
  • MRAM devices are semiconductor memories that use the magnetoresistive effect based on the spin-dependent conduction phenomenon peculiar to nanomagnets, and are non-volatile memories that can retain memory without external power supply.
  • the TMR effect is a phenomenon in which the resistance value changes depending on the direction of the spin, and detects "1" and "0" of information according to the level of the resistance.
  • MRAM devices are expected to be power-saving, high-speed, and nonvolatile large-capacity memories.
  • MRAM elements use a magnetic material for storing data, the problem is that information is erased or rewritten by an external magnetic field.
  • MRAM elements are actually used mainly on high-density mounting boards inside electronic devices.
  • semiconductor elements, communication elements, ultra-small motors, etc. are mounted at high density due to the recent development of mounting technology.
  • antenna elements, various mechanical components, power supplies, etc. are mounted at high density to constitute one device.
  • the magnetic field formed by each element and the like acts as an external magnetic field on the MRAM element where these elements and components are arranged close to each other.
  • Fig. 8 is a diagram showing an example of the magnetic field intensity assumed to act on the MRAM element from the outside.
  • an AC magnetic field with a magnetic field strength of about 200 Oe to 300 ⁇ e and a frequency of about 50 Hz to 60 Hz from the motor arranged on the mounting board It is assumed that an AC magnetic field having a magnetic field strength of about 100 Oe to 300 Oe and a frequency of about 50 Hz to several MHz acts on the MRAM element.
  • a relatively low-frequency magnetic field component is constantly generated from the power supply and the power supply.
  • a permanent magnet or the like may be arranged near the MRAM element.
  • a direct current (DC) magnetic field having a magnetic field strength of about 100 OOe may act on the MRAM element.
  • the magnetic field formed near the mounting substrate is, for example, a magnetic field intensity of about 100 ⁇ e and a frequency Is expected to act as a high-frequency magnetic field exceeding several MHz and act on the MRAM element.
  • the switching field strength of the MR AM element is about 30 3e to 50 ⁇ e, and in order to secure the record retention reliability of the MR AM element, the magnetic Is essential.
  • the present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a magnetic shield package of an MR AM element in which the influence of an external magnetic field on the MR AM element is suppressed and record retention reliability is improved.
  • Still another object of the present invention is to provide a sealing material for forming a magnetic shield package of an MRAM element. Disclosure of the invention
  • the MRAM element in an MR AM element magnetic shield package that suppresses the influence of an external magnetic field on the MR AM element, the MRAM element is sealed using a soft magnetic material-containing resin composite in which a soft magnetic material is mixed with a resin.
  • the MRAM element is sealed using a soft magnetic material-containing resin composite containing a soft magnetic material such as a soft magnetic fiber.
  • a soft magnetic material such as a soft magnetic fiber.
  • Such a soft magnetic material-containing resin composite may be used as a sealing material.
  • the formation of the magnetic shield package of the MRAM element can be simplified.
  • FIG. 1 is a schematic sectional view of a magnetic shield package of an MRAM element.
  • FIG. 2 is a diagram showing a second package structure.
  • FIG. 3 is a diagram showing a third package structure.
  • FIG. 4 is a diagram showing a fourth package structure.
  • FIG. 5 is a diagram showing a fifth package structure.
  • FIG. 6 is an explanatory view of forming a magnetic shield package by a transfer molding method.
  • FIG. 7 is an explanatory view of forming a magnetic shield package by the potting method.
  • FIG. 8 is a diagram showing an example of a magnetic field intensity assumed to act on the MRAM element from the outside.
  • Fig. 1 is a schematic cross-sectional view of the magnetic shield package of the MR AM element.
  • the MRAM element 11 is connected to the lead frame 13 by wire 12
  • the periphery of the element 11 is sealed with a sealing resin 14.
  • the magnetic shield package 10 is connected to the substrate 20 by leads 13 a extending from the lead frame 13.
  • a soft magnetic material is used as a resin for the encapsulant of the MRAM element 11. Is used. As described above, by protecting the MR AM element 11 with the sealing resin 14 containing the soft magnetic material, it is possible to suppress the influence of the external magnetic field on the MR AM element 11.
  • the MRAM element 11 is protected by using a soft magnetic material-containing resin composite as a sealing material.
  • a soft magnetic material-containing resin composite as a sealing material.
  • the magnetic shield package 10 is capable of handling magnetic flux from various directions. Protect 1 effectively.
  • the magnetic shield package 10 since the entire MRAM element 11 is protected from an external magnetic field, for example, a soft magnetic plate may be formed on the MRAM element 11 or the MRAM element 1 It is not necessary to form a soft magnetic insulating film as a passivation film on itself. for that reason, The magnetic shield package 10 can be manufactured without changing the flow of the conventional semiconductor manufacturing process.
  • the package structure of the MRAM element is, for example, the second to fifth packages shown in FIGS. 2 to 5 below.
  • FIGS. 2 to 5 the same elements as those shown in FIG. 1 are denoted by the same reference numerals.
  • FIG. 2 is a diagram showing a second package structure.
  • a lead frame 13 to which the MRAM element 11 is connected by a wire 12 is connected to the substrate 20 via a plurality of pole electrodes 15. Then, the entire MR AM element 11, the wire 12, the lead frame 13 and the pole electrode 15 on the substrate 20 are protected from the outside by the sealing resin 14 to form the magnetic shield package 10a. Have been.
  • FIG. 3 is a diagram showing a third package structure.
  • a lead frame 13 in which the MRAM element 11 is connected with a wire 12 is connected via a plurality of pole electrodes 15. Connected to substrate 20. Then, the entire MRAM element 11 and the wire 12 on the lead frame 13 are protected from the outside by the sealing resin 14 to form the magnetic shield package 10b.
  • FIG. 4 is a diagram showing a fourth package structure.
  • the MRAM element 11 is connected to the substrate 20 via the pole electrode 15. Then, the whole of the MRAM element 11 and the pole electrode 15 on the substrate 20 is protected from the outside by the sealing resin 14 to form the magnetic shield package 10c.
  • FIG. 5 is a diagram showing a fifth package structure.
  • the lead frame in which the MRAM element 11 is connected by the wire 12 is used.
  • the arm 13 is connected by inserting a plurality of pins 16 extending therefrom into the board 20. Then, the entire MRAM element 11 and the wire 12 on the lead frame 13 are protected from the outside by the sealing resin 14 to form a magnetic shield package 10d.
  • the MRAM element 11 is connected to the substrate 2 through the pole electrode 15 and the pin 16 as described above. Magnetic shielding against external magnetic fields is possible even in mounting forms such as BGA (Ball Grid Array) and PGA (Pin Grid Array) that are electrically connected to zero.
  • the soft magnetic material-containing resin composite used as the sealing material includes various soft magnetic materials. Can be used.
  • the soft magnetic material of the soft magnetic material-containing resin composite examples include NiZn ferrite, MnZn ferrite, MgMn ferrite, NiZnCu ferrite, NiZnCo ferrite, and the like.
  • a soft magnetic ferrite having a spinel structure is preferably used.
  • such a soft magnetic ferrite has an effect of suppressing the entry of the magnetic flux by changing the course of the magnetic flux or absorbing the energy with respect to the low-frequency magnetic field and the high-frequency magnetic field due to its soft magnetic characteristics.
  • soft magnetic ferrite has a high electric resistance and, when used as a sealing material, can prevent a short circuit even if the particles enter between wirings.
  • soft magnetic metal powders such as Fe, Co, and Ni, or FeNi, FeCo, FeA1, FeSi, FeSiAl, FeSiB the soft magnetic alloy powder of high magnetic permeability, such as C o S i B, absolute and more at S i 0 2 and highly insulating resin
  • the coated material can be used as a soft magnetic material. This insulating coating is applied for the purpose of preventing a short circuit when particles enter between wirings, as in the case of soft magnetic ferrite.
  • a soft magnetic metal powder or a soft magnetic alloy powder and a silane coupling agent for example, vinylmethoxytrisilane
  • a silane coupling agent for example, vinylmethoxytrisilane
  • this powder is sealed in a vacuum container and heated to about 450 ° C., and the silane coupling layer is subjected to a thermal decomposition reaction to form a thin Si 2 coating layer on the surface.
  • a soft magnetic material on which insulation coating has been performed can be obtained.
  • the soft magnetic metal powder or soft magnetic alloy powder of the above, to form a F e 2 0 3 or C o O is an oxide of the metal itself or alloy itself on the particle surfaces, the oxide It is also possible to use an insulating coating.
  • an epoxy resin is usually preferably used as the resin used for the soft magnetic material-containing resin composite.
  • liquid crystal polymers, polyethylenes, polyamides, Ni-based resins, and the like are also preferably used in consideration of moldability.
  • the soft magnetic material-containing resin composite has a composition in which a certain amount of soft magnetic material capable of suppressing the entry of magnetic flux is mixed with the resin, or a composition in which only the soft magnetic material is mixed with the resin. Is also good.
  • the content of the soft magnetic material in the soft magnetic material-containing resin composite can be appropriately changed according to the mounting environment of the MRAM element 11.
  • the particle shape of the soft magnetic material may be of various shapes in consideration of the filling factor necessary for suppressing the entry of magnetic flux and the fluidity of the soft magnetic material-containing resin composite.
  • the soft magnetic ferrite crushed particles having a diameter of several m to several tens of m, which are produced by a known method and are commercially available, can be used.
  • spherical particles formed by a granulation method such as a spray drying method can be used.
  • Examples of the soft magnetic material coated with an insulating material include those having a crushed shape and a spherical shape as described above, and those having a flat shape to a thickness (skin depth) at which a high-frequency electromagnetic field enters the particle skin.
  • a disc-shaped or elliptical one may be used.
  • a transfer mold method or a potting method can be used.
  • the filling ratio of the soft magnetic material of the soft magnetic material-containing resin composite is 50% by volume or more.
  • the maximum filling rate of ordinary soft magnetic material powder is about 85% by volume, but the filling rate is less than 85% by volume in order to develop the particle shape, required viscosity and particle size Often.
  • a soft magnetic material and a resin are mixed using an ender and three rolls to form a resin composite containing a soft magnetic material.
  • the filling rate is 60% by volume to 80% by volume for transfer molding, and 50% by volume to "(0% by volume" for potting requiring low viscosity.
  • FIG. 6 is an explanatory view of forming a magnetic shield package by the transfer molding method.
  • the soft magnetic material-containing resin composite 31 after mixing is processed into a tablet by a known method. Then 643
  • This tablet-shaped soft magnetic material-containing resin composite 31 is set in a mold 32 of a molding machine, and is heated to a temperature of 150 ° C. (approximately 180 ° C.).
  • the soft magnetic material-containing resin composite 31 is extruded at a predetermined extrusion pressure by a jaw 33 to seal the MRAM element 11.
  • FIG. 7 is an explanatory view of forming a magnetic shield package by the potting method.
  • the soft magnetic material-containing resin composite 41 after mixing is injected into a dispenser 42. Then, the MRAM element 11 on the substrate 20 is partitioned by the dam 43, and the soft magnetic material-containing resin composite 41 is placed above the target MRAM element 11 at a constant extrusion pressure from the transducer 42. And seal the MRAM element 11.
  • the soft magnetic material is mixed with the resin to form a soft magnetic material-containing resin composite, and the MRAM element 11 is sealed using the soft magnetic material-containing resin composite. Therefore, the soft magnetic material-containing resin composite can be easily adjusted, and the magnetic shield package can be formed inexpensively and easily without changing the flow of the conventional semiconductor manufacturing process.
  • the MRAM element is sealed with a soft magnetic material-containing resin composite in which a soft magnetic material is mixed with a resin to form a magnetic shield package.
  • the soft magnetic material-containing resin composite used as the sealing material of the magnetic shield package is easy to adjust, and the use of such a sealing material makes it possible to form the magnetic shield package at low cost and simply. Can do it can.

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un ensemble écran magnétique et un matériau d'étanchéité pour un élément de mémoire non volatile magnétique, servant à améliorer la fiabilité de conservation des enregistrements d'un élément d'une mémoire RAM magnétique. Selon l'invention, un matériau composite contenant un matériau magnétique doux mélangé à une résine est utilisé comme résine d'étanchéité (14) pour étanchéifier l'élément (11) de la RAM magnétique de façon à former un ensemble écran magnétique (10). Ainsi, dans le cas d'un champ magnétique basse fréquence, il est possible d'empêcher la pénétration d'un flux magnétique dans l'élément de RAM magnétique (11) en raison du terme ν' de la partie réelle de la perméabilité. En outre, dans le cas d'un champ magnétique haute fréquence, en raison du terme ν'' de la partie imaginaire, le champ magnétique est absorbé sous forme d'énergie thermique et la pénétration du champ magnétique dans l'élément de RAM magnétique (11) est empêchée. De plus, en étanchéifiant l'élément de RAM magnétique (11) de façon à l'entourer, il est possible d'empêcher efficacement la pénétration d'un flux magnétique provenant de différentes directions. Par conséquent, il est possible d'améliorer l'efficacité de la conservation des enregistrements de l'élément de RAM magnétique (11) dans le cas d'un champ magnétique externe présentant une large plage de fréquences.
PCT/JP2003/003643 2002-04-03 2003-03-25 Ensemble ecran magnetique et materiau d'etancheite pour element de memoire non volatile magnetique WO2003083939A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002101258A JP3879566B2 (ja) 2002-04-03 2002-04-03 磁気不揮発性メモリ素子の磁気シールドパッケージおよび封止材料
JP2002-101258 2002-04-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1696486A1 (fr) * 2005-02-25 2006-08-30 Fuji Photo Film Co., Ltd. Circuit intégré et étiquette sans fil pour circuit intégré

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013140B2 (ja) * 2003-01-15 2007-11-28 ソニー株式会社 磁気メモリ装置
KR101855294B1 (ko) 2010-06-10 2018-05-08 삼성전자주식회사 반도체 패키지
JP5533367B2 (ja) * 2010-07-07 2014-06-25 日本電気株式会社 電子部品の実装構造及び実装方法
EP2762606B1 (fr) 2011-09-30 2016-04-13 JX Nippon Mining & Metals Corporation CIBLE DE PULVÉRISATION CATHODIQUE EN ALLIAGE À BASE DE Fe-Al
JP6401036B2 (ja) 2014-12-10 2018-10-03 株式会社ジェイデバイス 磁気不揮発性メモリ素子の磁気シールドパッケージ
US9972579B1 (en) * 2016-11-16 2018-05-15 Tdk Corporation Composite magnetic sealing material and electronic circuit package using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60184630U (ja) * 1984-05-18 1985-12-07 凸版印刷株式会社 電磁気シ−ルド材料
JP2002093608A (ja) * 2000-09-19 2002-03-29 Mitsui Chemicals Inc マイクロカプセル化電磁シールド材及びそれを配合した樹脂組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60184630U (ja) * 1984-05-18 1985-12-07 凸版印刷株式会社 電磁気シ−ルド材料
JP2002093608A (ja) * 2000-09-19 2002-03-29 Mitsui Chemicals Inc マイクロカプセル化電磁シールド材及びそれを配合した樹脂組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1696486A1 (fr) * 2005-02-25 2006-08-30 Fuji Photo Film Co., Ltd. Circuit intégré et étiquette sans fil pour circuit intégré

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TW200402853A (en) 2004-02-16
JP2003297983A (ja) 2003-10-17

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