TW200402853A - Magnetic shielding package body of magnetic nonvolatile memory device and packaging material - Google Patents

Magnetic shielding package body of magnetic nonvolatile memory device and packaging material Download PDF

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TW200402853A
TW200402853A TW092107106A TW92107106A TW200402853A TW 200402853 A TW200402853 A TW 200402853A TW 092107106 A TW092107106 A TW 092107106A TW 92107106 A TW92107106 A TW 92107106A TW 200402853 A TW200402853 A TW 200402853A
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magnetic
soft magnetic
package
resin
magnetic field
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TW092107106A
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Chinese (zh)
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Katsumi Okayama
Kaoru Kobayashi
Makoto Motoyoshi
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

A magnetic shielding package body of magnetic nonvolatile memory device capable of increasing the record maintenance reliability of MRAM device and the packaging material are disclosed in the present invention. In the invention, the resin compound, which contains a soft magnetic body and is obtained by mixing soft magnetic material with the resin, is used as the package resin (14) to package MRAM device (11) so as to form the magnetic shielding package body (10). Thus, by providing the real part μ' item of permeability for low-frequency magnetic field, entrance of magnetic beam into the MRAM device (11) is then suppressed. In addition, by providing the imaginary part μ'' item of permeability for high-frequency magnetic field to absorb the magnetic field as the heat energy, entrance of magnetic beam into the MRAM device (11) is then suppressed. Furthermore, by performing packaging under the condition of surrounding periphery of MRAM device (11), it is capable of effectively suppressing the entrance of magnetic beam from each direction. Therefore, for the external magnetic field with wide frequency range, it is capable of increasing the record maintenance reliability of MRAM device (11).

Description

200402853 玖、發明說明： 【發明所屬之技術領域】 本發明係有關磁性非揮發性記憶元件之磁屏蔽封裝體及 封裝材料，特另是有關抑制外部磁場對磁性非揮發性=憶 讀之影響用之磁性非揮發性記憶元件之磁屏蔽封裝體^ 封裝材料。 & 【先前技術】 近年來，半導體記憶體，如日本應用磁性 究會資料等報告所示，正弟人汗 • 、仃磁性非揮發性記憶體 a_lc Random Access Mem〇ry，以下稱「μ 開發。 」 MRAM7t件係利用依據毫微磁性體特有之依賴自旋之傳 ^見象之磁性電阻效果的半導體記憶體，不自外部供給電 力而可保持記憶之非揮發性記憶體。 ^MRAMtg件《資訊寫入係藉由配線成矩陣狀之位元線 舁字7C線之交點的合成磁 ^ 1文人又 < 早兀的磁性自旋反 相’將其方向作為丨,丨丨 试 為，0《資訊來記憶。此外，讀取時， 係利用應用磁性電阻敎莫+ ， y <TMR(隧道磁性電阻）效果來進 厅。所謂TMR效果，係一赫茲山a a 、 、種精由自旋之方向而改變電阻值 《現象’並藉由電阻之高低檢測資訊之” ”，”〇、 曰件被期待作為省電力、高速且非揮發性之大容 I記憶體。 在::：二RAM7C件因使用磁性體於記憶保持上，因此存 外部磁場刪除我重窝資訊的問題。200402853 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to magnetic shielding packages and packaging materials of magnetic non-volatile memory elements, and particularly to the effects of suppressing the influence of external magnetic fields on magnetic non-volatile = recall. Magnetic shielding package of magnetic non-volatile memory element ^ packaging material. & [Previous technology] In recent years, semiconductor memory, as shown in the report of the Japan Applied Magnetic Research Society, etc., are young people ’s sweat and magnetic non-volatile memory a_lc Random Access Memory, hereinafter referred to as "μ development ”MRAM7t is a non-volatile memory that can maintain memory without supplying power from the outside, using semiconductor memory based on the magnetoresistance effect of spin-dependent transmission that is unique to nano-magnets. ^ MRAMtg "Information writing is a synthetic magnetism by crossing the intersection of 7C lines of bit lines and word lines in a matrix shape. ^ 1 writer again < Early Wu's magnetic spin inversion 'takes its direction as 丨, 丨 丨Try, 0 "information to remember. In addition, the reading is performed by applying the magnetoresistance +, y < TMR (tunnel magnetoresistance) effect. The so-called TMR effect is a Hertzian aa, a seed that changes the resistance value "phenomenon" by the direction of the spin and detects the information by the resistance level "", "〇", which is expected to be power-saving, high-speed and Non-volatile large-capacity I memory. In :: 2. RAM7C parts use magnetic body for memory retention, so the external magnetic field is deleted to delete the problem of my heavy nest information.

84020.DOC 200402853 實際上使用MRAM元件者，主要係在電子機器内部之高 密度安裝基板上。此種高密度安裝基板上，藉由近年來安 裝技術之發達，可高密度地安裝半導體元件、通信用元件 及超小型馬達等。此外，電子機器内部高密度安裝有天線 元件、各種機械零件、電源等，來構成一個機器。 此等各元件、零件以近接狀態配置之MRAM元件，各元 件等形成之磁場具有外部磁場作用。 圖8係顯示假設自外部作用於MRAM元件之一種磁場強 度圖。 假設自配置於安裝基板上之馬達之如磁場強度約200 Oe 〜3 00 Oe，頻率約50 Hz〜60 Hz之交流磁場，此外，自電源 部之磁場強度約100 Oe〜300 Oe，頻率約50 Hz〜數MHz之交 流磁場作用於MRAM元件。則自馬達及電源部等穩定地產 生頻率較低之磁場成分。 此外，亦有於MRAM元件附近配置永久磁石等，此時， 如磁場強度約1000 Oe之直流（DC)的磁場作用於MRAM元 件。再者，假設形成於安裝基板近旁之磁場（基板近旁磁場） 如為磁場強度約100 Oe，頻率超過數MHz之高頻磁場，作 用於MRAM元件。 因而，於所安裝之MRAM元件周圍同時有直流磁場成分 與自低頻至高頻之寬廣頻率範圍之交流磁場成分。而 M R A Μ元件之反相磁場強度約為3 0 Ο e〜5 0 Ο e，為求確保 MRAM元件之記錄保持可靠性，須確立防止外部磁性進入 之磁屏蔽方法。84020.DOC 200402853 Those who actually use MRAM components are mainly on high-density mounting substrates inside electronic equipment. On such a high-density mounting substrate, semiconductor devices, communication components, ultra-small motors, and the like can be mounted at high density due to the development of mounting technology in recent years. In addition, antenna elements, various mechanical parts, power supplies, etc. are mounted inside the electronic device at high density to form a single device. For these MRAM elements in which each element and part are arranged in close proximity, the magnetic field formed by each element has an external magnetic field. Fig. 8 is a graph showing a magnetic field intensity assumed to be applied to the MRAM element from the outside. It is assumed that the magnetic field strength of a motor arranged on a mounting substrate is about 200 Oe to 3 00 Oe, and an AC magnetic field having a frequency of about 50 Hz to 60 Hz. In addition, the magnetic field strength from the power source is about 100 Oe to 300 Oe, and the frequency is about 50. An AC magnetic field of Hz to several MHz acts on the MRAM element. The magnetic field components with a low frequency are generated from the stable parts of the motor and power supply. In addition, there are also permanent magnets arranged near the MRAM element. At this time, for example, a direct current (DC) magnetic field with a magnetic field strength of about 1000 Oe acts on the MRAM element. In addition, it is assumed that a magnetic field formed near the mounting substrate (a magnetic field near the substrate) is a high-frequency magnetic field having a magnetic field strength of about 100 Oe and a frequency exceeding several MHz, and is used as an MRAM element. Therefore, there are both a DC magnetic field component and an AC magnetic field component in a wide frequency range from low frequency to high frequency around the mounted MRAM element. The reverse magnetic field strength of the M R A M element is about 300 e ~ 500 e. In order to ensure the reliability of the recording retention of the MRAM element, it is necessary to establish a magnetic shielding method to prevent the entry of external magnetism.

84020.DOC 200402853 有鑑於這一點，本發明之目的在提供一種抑制外部磁場 對MRAM元件之影響，提高記錄保持可靠性之MRAM元件 之磁屏蔽封裝體。 再者，本發明之目的在提供一種形成MRAM元件之磁屏 蔽封裝體用之封裝材料。 【發明内容】 本發明提供一種MRAM元件之磁屏蔽封裝體，其係抑制 外部磁場對MRAM元件之影響，其特徵為：MRAM元件係 使用於樹脂内混合軟磁性材料之含軟磁性體之樹脂複合體 來封裝。 採用此種MRAM元件之磁屏蔽封裝體，MRAM元件係使 用如包含軟磁性鐵素體等軟磁性材料之含軟磁性體之樹脂 複合體來封裝。因而外部磁場之磁束之行進路線在磁屏蔽 封裝體内改變，或是強度被吸收而減弱。藉此可抑制磁束 進入MRAM元件内。 此外，藉由使用此種含軟磁性體之樹脂複合體作為封裝 材料，可謀求簡化MRAM元件之磁屏蔽封裝體的形成。 【實施方式】 以下，參照圖式說明本發明之實施形態。 圖1係MRAM元件之磁屏蔽封裝體之概略剖面圖。 於磁屏蔽封裝體10内，MRAM元件11以配線12連結於引 導框架13，於MRAM元件11之周圍藉由封裝樹脂14封裝。 該磁屏蔽封裝體10以自引導框架13延伸之引線13a連接於 基板20。84020.DOC 200402853 In view of this, an object of the present invention is to provide a magnetic shield package of an MRAM element that suppresses the influence of an external magnetic field on the MRAM element and improves the reliability of record keeping. Furthermore, an object of the present invention is to provide a packaging material for forming a magnetic shielding package for an MRAM device. [Summary of the Invention] The present invention provides a magnetic shielding package of an MRAM element, which suppresses the influence of an external magnetic field on the MRAM element. The feature is that the MRAM element is a resin composite containing a soft magnetic body and a soft magnetic material mixed in a resin Body to package. A magnetic shield package of such an MRAM element is used. The MRAM element is packaged using a soft magnetic body-containing resin composite such as soft magnetic ferrite and the like. Therefore, the course of the magnetic flux of the external magnetic field is changed in the magnetic shielding package, or the intensity is absorbed and weakened. This prevents the magnetic flux from entering the MRAM element. In addition, by using such a soft magnetic body-containing resin composite as a packaging material, it is possible to simplify the formation of a magnetic shield package of an MRAM element. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view of a magnetic shield package of an MRAM element. In the magnetic shielding package 10, the MRAM element 11 is connected to the guide frame 13 by wiring 12, and is packaged around the MRAM element 11 by a packaging resin 14. The magnetic shield package 10 is connected to the substrate 20 with leads 13a extending from the guide frame 13.

84020.DOC 200402853 本發明於該MRAM元件11之封裝材料内使用於樹脂内混 合軟磁性材料之含軟磁性體之樹脂複合體。因而，係以含 軟磁性材料之封裝樹脂14保護MRAM元件11，可抑制外部 磁場對MRAM元件11之影響。 亦即，先前通常對於低頻磁場，係採用於MRAM元件附 近配置透磁率高之物質，使更多之磁數流入該物質内，來 抑制磁束進入MRAM元件之方法。此外，對於高磁場，係 採用於MRAM元件附近配置電磁波吸收材料，將進入之磁 束轉換成熱能加以吸收的方法。 而本發明則是使用含軟磁性體之樹脂複合體作為封裝材 料來保護MRAM元件11。藉此，藉由對低頻磁場提供透磁 率之實部卜’項，改變磁束行進路線，而抑制磁束進入MRAM 元件11。此外，藉由對高頻磁場提供透磁率之虛部μ"項， 將磁場作為熱能吸收，而抑制磁束進入MRAM元件11。 再者，因MRAM元件11處於其周圍被含軟磁性體之樹脂 複合體包圍之狀態，因此該磁屏蔽封裝體10對於來自各方 向之磁束，可有效保護MRAM元件11。 藉此，可使MRAM元件11之記錄保持可靠性提高。再者 亦可預防因電晶體之切換而產生雜訊。 此外，因該磁屏蔽封裝體10保護整個MRAM元件11避免 受外部磁場影響，因此無須於MRAM元件11之上部形成軟 磁性體之板，或於MRAM元件11本身形成鈍化膜之軟磁性 絕緣膜。因而無須變更先前之半導體製造步驟的流程，即 可製造磁屏蔽封裝體10。 84020.DOC -9- 200402853 另外，MRAM元件之封裝體構造，可將圖丨所示之磁屏蔽 封裝把10形成第一封裝體構造，亦可為以下圖2至圖5所示 之第一至第五封裝體構造。此時，圖2至圖5中，與圖1所示 之構成要素相同的要素註記相同符號。 圖2係顯示第二封裝體構造圖。該第二封裝體構造，以配 線12連結有MRAM元件11之引導框架13係經由數個球電極 15連接於基板20。而後，整個基板2〇上之Mram元件n、 配線12、引導框架13及球電極15係以封裝樹脂“保護避免 文外邵影響’而形成有磁屏蔽封裝體1 〇a。 圖3係顯示第三封裝體構造圖。該第三封裝體構造與第二 封裝體構造相同，以配線12連結有MRAM元件丨丨之引導框 木13係經由數個球電極丨5連接於基板2〇。而後，整個引導 框架13上之MRAM元件u及配線12係以封裝樹脂14保護避 免受外邵影響，而形成有磁屏蔽封裝體10b。 圖4係顯示第四封裝體構造圖。該第四封裝體構造之 MRAM元件11係經由數個球電極15連接於基板2〇。而後， 整個基板20上之MRAM元件11及球電極15係以封裝樹脂14 保護避免受外部影響，而形成有磁屏蔽封裝體1〇c。 圖5係顯示第五封裝體構造圖。該第五封裝體構造，以配 線12連結於MRAM元件π之引導框架13，係藉由將自此伸 出之數個接腳16插入基板2〇來連接。而後整個引導框架13 上之MRAM兀件11及配線12係以封裝樹脂14保護避免受外 部影響，而形成有磁屏蔽封裝體1〇d。 如此，藉由在包圍MRAM元件11周圍的狀態下封裝，可84020.DOC 200402853 The present invention uses a soft magnetic body-containing resin composite containing a soft magnetic material in a resin in the packaging material of the MRAM element 11. Therefore, the MRAM element 11 is protected by the encapsulating resin 14 containing a soft magnetic material, and the influence of the external magnetic field on the MRAM element 11 can be suppressed. That is, in the past, generally, for a low-frequency magnetic field, a substance having a high magnetic permeability is arranged near the MRAM element, and more magnetic numbers are flowed into the substance to suppress the magnetic beam from entering the MRAM element. For high magnetic fields, an electromagnetic wave absorbing material is arranged near the MRAM element, and the incoming magnetic beam is converted into thermal energy and absorbed. In the present invention, the MRAM element 11 is protected by using a resin composite containing a soft magnetic body as a packaging material. Thereby, by providing the real part of the permeability of the low-frequency magnetic field, the magnetic flux travelling path is changed, and the magnetic flux is prevented from entering the MRAM element 11. In addition, by providing the imaginary part μ " of the magnetic permeability of the high-frequency magnetic field, the magnetic field is absorbed as thermal energy, and the magnetic flux is prevented from entering the MRAM element 11. Furthermore, since the MRAM element 11 is surrounded by a resin composite containing a soft magnetic body, the magnetic shield package 10 can effectively protect the MRAM element 11 from magnetic flux from various directions. This makes it possible to improve the recording retention reliability of the MRAM element 11. Furthermore, noise can be prevented due to the switching of the transistor. In addition, since the magnetic shielding package 10 protects the entire MRAM element 11 from being affected by an external magnetic field, it is not necessary to form a soft magnetic plate on the upper portion of the MRAM element 11 or a soft magnetic insulating film of a passivation film on the MRAM element 11 itself. Therefore, the magnetic shielding package 10 can be manufactured without changing the flow of the previous semiconductor manufacturing steps. 84020.DOC -9- 200402853 In addition, the package structure of the MRAM device can form the magnetic shield package 10 shown in Figure 丨 into the first package structure, or the first to the following shown in Figure 2 to Figure 5 Fifth package structure. At this time, in Figs. 2 to 5, the same components as those shown in Fig. 1 are denoted by the same reference numerals. FIG. 2 is a structural diagram of a second package. In the second package structure, the guide frame 13 to which the MRAM element 11 is connected by the wiring 12 is connected to the substrate 20 via a plurality of ball electrodes 15. Then, the Mram element n, the wiring 12, the guide frame 13, and the ball electrode 15 on the entire substrate 20 are formed with a sealing resin "protected from external influences" to form a magnetic shielding package 10a. Fig. 3 shows the first Three package structure diagrams. The third package structure is the same as the second package structure, and the guide frame wood 13 connected to the MRAM element with wiring 12 is connected to the substrate 20 through a plurality of ball electrodes 5. Then, The MRAM element u and the wiring 12 on the entire guide frame 13 are protected by the encapsulating resin 14 from external influences, and thus a magnetic shielding package 10b is formed. Fig. 4 shows a structure diagram of a fourth package. The structure of the fourth package The MRAM element 11 is connected to the substrate 20 via a plurality of ball electrodes 15. Then, the MRAM element 11 and the ball electrode 15 on the entire substrate 20 are protected by an encapsulating resin 14 from external influences, and a magnetic shield package 1 is formed. 〇c. Fig. 5 is a diagram showing the structure of a fifth package. The fifth package structure is connected to the guide frame 13 of the MRAM element π by wiring 12, and is inserted into the substrate by a plurality of pins 16 protruding from the guide frame 13. 2〇 to connect. Then the whole MRAM Wu member 13 of the guide frame 11 and the wiring lines 12 to prevent the sealing resin 14 protects the affected outer portion, there is formed a magnetic shield package 1〇d. Thus, in the state encapsulated by surrounding the periphery of MRAM element 11 may be

84020.DOC -10- 200402853 有效抑制磁束自各方向進入。因此，除MRAM元件u經由 引線13a電性連接於基板2〇之安裝形態之外，如上所述，即 使為MRAM元件11經由球電極15及接腳16電性連接於基板 20等BGA(球柵陣列）及PGA(接腳栅陣列）之安裝形態，仍可 對外邵磁場實施磁屏蔽。 以上所示之磁屏蔽封裝體10，10a，10b，l〇c，i〇d中之用 作封裝材料之含軟磁性體之樹脂複合體可使用各種軟磁性 材料。 一 口奴磁性體之樹脂複合體之軟磁性材料宜使用鎳鋅鐵素 、錳鋅鐵素體、鎂錳鐵素體、鎳鋅銅鐵素體、鎳鋅鈷鐵 素體等，一般而言採尖晶石型構造之軟磁性鐵素體。發現 此種軟磁性鐵素體藉由其軟磁性特性，如前述，具有對於 低頻磁場及高頻磁場，藉由改變磁束行進路線或吸收其能 里抑制磁束進入的效果。此外，軟磁性鐵素體之電阻高， 用於封裝材料時，即使其粒子進人配線間，仍可防止短路。 此外，亦可將以氧切及高絕緣性樹脂等絕緣塗敷鐵、 鈷、鎳等軟磁性金屬粉末，或鐵錄、鐵姑、鐵銘、鐵石夕、 鐵石夕銘、鐵珍硼、料等高透磁率之軟磁性合金粉末者 用作叙磁性材料。實施該絕緣塗敷之目的與軟磁性鐵素體 同樣地，係防止粒子進入配線間時之短路。 “旦 絕緣塗敷方法，如混合攪拌軟磁性金屬粉末或軟磁性合 金粉末與錢_合劑（如乙烯基甲氧基丙料)，於其表: 形成薄<錢_合層。其次，將該粉末封人減壓容器内， 力二、土、4 450 C，將石夕燒耦合層予以熱分解反應，於表面形84020.DOC -10- 200402853 effectively suppresses the magnetic flux from entering from all directions. Therefore, in addition to the mounting form in which the MRAM element u is electrically connected to the substrate 20 via the lead 13a, as described above, even the MRAM element 11 is electrically connected to a BGA (ball grid) such as the substrate 20 via the ball electrode 15 and the pin 16 Array) and PGA (Pin Grid Array) installations can still be magnetically shielded from external magnetic fields. Various soft magnetic materials can be used for the soft magnetic body-containing resin composite used as a packaging material in the magnetic shield packages 10, 10a, 10b, 10c, and 10d shown above. The soft magnetic material of the resin composite of the bite magnet is preferably nickel zinc ferrite, manganese zinc ferrite, magnesium manganese ferrite, nickel zinc copper ferrite, nickel zinc cobalt ferrite, etc. Soft magnetic ferrite with spinel structure. It has been found that this soft magnetic ferrite has the effect of suppressing the entry of magnetic flux by changing the course of the magnetic flux or absorbing its energy for the low frequency magnetic field and the high frequency magnetic field due to its soft magnetic properties. In addition, the soft magnetic ferrite has high resistance, and when used in packaging materials, even if its particles enter the wiring room, it can still prevent short circuits. In addition, soft magnetic metal powders such as iron, cobalt, and nickel can also be coated with oxygen-cutting and highly insulating resins, or Tielu, Tiegu, Tieming, Tieshixi, Tieshiximing, Tiezhen-Boron, etc. Those with high magnetic permeability and soft magnetic alloy powder are used as magnetic materials. The purpose of the insulation coating is the same as that of the soft magnetic ferrite to prevent short-circuiting when particles enter the wiring room. "Dan insulation coating methods, such as mixing and stirring soft magnetic metal powder or soft magnetic alloy powder and money mixture (such as vinyl methoxypropane), in the table: forming a thin < money mixture layer. Second, the The powder was sealed in a decompression container, and the second layer, soil, and 4 450 C were used to thermally decompose the coupling layer of Shi Xiuyao.

84020.DOC -11 - 200402853 成薄足氧化矽塗敷層。藉此，可獲得經過絕緣塗敷之 性材料。 再者，將上述軟磁性金屬粉末或軟磁性合金粉末作為敕 磁性材料時，亦可於粒子表面形成其金屬本身或合金本身 之氧化物之Fe^3或Co0,使用將該氧化物作為絕緣塗敷者。 ^匕外’料含軟磁性體之樹脂複合體之樹脂，通常適用 %乳系樹脂。此外，液晶聚合物、聚乙烯、聚醯胺、或尼 龍系樹脂等亦考慮成形性時亦適用。 含軟磁性體之樹脂複合财可為於樹脂内混合可抑制磁 束進入之—定量之軟磁性材料來組成，或是亦可為於樹脂 内僅混合軟磁性材料來組成。含軟磁性體之樹脂複合體之 軟磁性材料之含量，可配合败剔元件u之安裝環境^ 變更。 上述軟磁性材料之粒子形狀，考慮抑制磁束進入所需之 填充率及含軟磁性體之樹脂複合體之流動性，可使用 形狀者。 、軟磁性鐵素體可使用以熟知之方法製造，而在市面上銷 售之直徑為數μχη〜數十μιη之破碎粒子。再者為长進一 + 提高填充率且確保流動性，可使用以噴霧乾燥法等=造^ 法所形成之球狀粒子。 ° i 此外，經過絕緣塗敷之軟磁性材料，除上述破碎形大 及球狀者之外，亦可使用具有高頻電磁場進入粒= 二 度（Skin Depth)之厚度的爲平狀者或形成圓盤狀或糖圓: 者0 84020.DOC -12- 200402853 精由此種使用軟磁性材料及樹脂之含軟磁性體之樹脂複 合體’形成磁屏蔽封裝體時，可使用轉移模式法或裝罐法 。此時含軟磁性體之㈣複合體之敕磁輯料之填充率在 5 0體積％以上。此外 率約為85體積％，不過為求呈現粒子形狀 粒度’填充率多在85體積％以下。 般之軟磁性材料粉末之最大填充 必要之黏度及 以下，舉出具體例來說明磁屏蔽封裝體之形成方法。 形成磁屏蔽封裝體時，首先使用捏和機、三輥混煉機混 煉軟磁性材料及樹脂，而形成含軟磁性體之樹脂複合體。 此時轉和模式用之填充率為60體積％〜8〇體積％，需要 低黏度之裝罐用之填充率為5〇體積％〜7〇體積％。 圖6係藉由轉移模式法形成磁屏蔽封裝體之說明圖。 知用轉移模式法時，首先藉由熟知之方法將混煉後之含 軟磁性體之樹脂複合體31加工成薄片狀。其次，將該薄片 狀尤含軟磁性體之樹脂複合體3丨設置於成形機之模具32内 ，溫度加熱至約15〇。〇〜180t。而後，藉由柱塞33,以特 定之擠塵力擠壓含軟磁性體之樹脂複合體31，來封裝 MRAM元件 11。 圖7係藉由裝罐法形成磁屏蔽封裝體之說明圖。 採用裝罐法時，首先將混練後之含軟磁性體之樹脂複合 體41注入分料器42内。而後，以閘43切割基板20上之MRAM 元件11，於目的之MRAM元件11上部，自分料器42，以一 足之擦壓力流入含軟磁性體之樹脂複合體41，來封裝 MRAM元件 11。84020.DOC -11-200402853 into a thin foot silicon oxide coating. Thereby, an insulating-coated material can be obtained. Furthermore, when the above-mentioned soft magnetic metal powder or soft magnetic alloy powder is used as a rhenium magnetic material, Fe ^ 3 or Co0 of the metal itself or the oxide of the alloy itself can be formed on the particle surface, and the oxide is used as an insulating coating. Spreader. ^ External resins containing resins containing soft magnetic materials are usually suitable for% resins. In addition, liquid crystal polymers, polyethylene, polyamide, or nylon resins are also applicable when moldability is considered. The resin composite material containing soft magnetic body may be composed of a soft magnetic material mixed with a certain amount of magnetic magnetic material in the resin, or may be composed of only a soft magnetic material mixed in the resin. The content of the soft magnetic material of the resin composite containing the soft magnetic body can be changed in accordance with the installation environment of the defective element u. As the particle shape of the soft magnetic material, a shape can be used in consideration of a filling rate required to suppress the entry of a magnetic beam and a fluidity of the resin composite containing the soft magnetic body. The soft magnetic ferrite can be produced by a well-known method, and the commercially available crushed particles having a diameter of several μx to several tens of μm are available. Furthermore, to increase the growth rate and increase the filling rate and ensure fluidity, spherical particles formed by a spray drying method or the like can be used. ° i In addition, the soft magnetic material that has been coated with insulation, in addition to the above-mentioned broken shape and spherical shape, can also be used with a high-frequency electromagnetic field to enter the particle = 2 degrees (Skin Depth) thickness is flat or formed Disk-shaped or sugar-shaped: 0 84020.DOC -12- 200402853 When a magnetic shielding package is formed from such a resin composite containing soft magnetic materials using soft magnetic materials and resins, the transfer mode method or device can be used. Pot method. At this time, the filling rate of the rhenium magnetic material of the rhenium complex containing the soft magnetic body is more than 50% by volume. The ratio is about 85% by volume, but in order to show the shape of the particles, the particle size 'filling ratio is usually not more than 85% by volume. The maximum filling of a general soft magnetic material powder, the necessary viscosity and the following, specific examples will be used to explain the method of forming a magnetic shield package. When forming a magnetic shield package, a kneader and a three-roll kneader are first used to knead the soft magnetic material and the resin to form a resin composite containing the soft magnetic body. At this time, the filling rate for the transfer mode is 60 vol% to 80 vol%, and the filling rate for cans requiring low viscosity is 50 vol% to 70 vol%. FIG. 6 is an explanatory diagram of a magnetic shield package formed by a transfer mode method. When the transfer mode method is known, the kneaded soft magnetic body-containing resin composite 31 is first processed into a sheet shape by a well-known method. Next, the sheet-like resin composite 3 containing a soft magnetic body is set in a mold 32 of a molding machine, and the temperature is heated to about 150 °. 〇 ~ 180t. Then, the plunger 33 is used to squeeze the resin composite 31 containing the soft magnetic body with a specific dust squeezing force to package the MRAM element 11. FIG. 7 is an explanatory diagram of a magnetic shield package formed by a canning method. When the canning method is used, the kneaded soft magnetic body-containing resin composite 41 is first poured into the dispenser 42. Then, the MRAM element 11 on the substrate 20 is cut by the gate 43. From the dispenser 42, the MRAM element 11 is poured into the soft magnetic body-containing resin composite 41 with a sufficient rubbing pressure on the upper part of the target MRAM element 11 to package the MRAM element 11.

84020.DOC -13- 200402853 如此於樹脂内混合軟磁性材料，而形成含軟磁性體之樹 脂複合體，使用其封裝MRAM元件11。因而含軟磁性體之 樹脂複合體之調整容易，並且不變更先前之半導體製造步 騾流程，即可廉價且簡便地形成磁屏蔽封裝體。 產業上之利用可行性- 如以上之說明，本發明係藉由於樹脂内混合軟磁性材料 之含軟磁性體之樹脂複合體來封裝MRAM元件，而形成磁 屏蔽封裝體。藉此，可對自低頻至高頻之外部磁場，抑制 磁束進入MRAM元件，使其記錄保持可靠性提高。 此外，用作磁屏蔽封裝體之封裝材料之含軟磁性體之樹 脂複合體調整容易，再者，使用此種封裝材料可廉價且簡 便地形成磁屏蔽封裝體。 【圖式之簡單說明】 圖1係MRAM元件之磁屏蔽封裝體之概略剖面圖。 圖2係顯示第二封裝體構造圖。 圖3係顯示第三封裝體構造圖。 圖4係顯示第四封裝體構造圖。 圖5係顯示第五封裝體構造圖。 圖6係藉由轉移模式法形成磁屏蔽封裝體之說明圖。 圖7係藉由裝罐法形成磁屏蔽封裝體之說明圖。 圖8係顯示假設自外部作用於MRAM元件之一種磁場強 度圖。 84020.DOC -14- 200402853 【圖式代表符號說明】 10, 10a，10b，10c，10d 磁屏蔽封裝體 11 元件 12 13 13a 14 15 配線 引導框架 引線 封裝樹脂 球電極 16 接腳 20 基板 31 樹脂複合體 32 模具 33 栓塞 41 樹脂複合體 42 分料器 43 閘 84020.DOC - 15-84020.DOC -13- 200402853 In this way, a soft magnetic material is mixed in a resin to form a resin composite containing a soft magnetic body, and the MRAM element 11 is packaged with the resin composite. Therefore, the soft magnetic body-containing resin composite can be easily adjusted, and the magnetic shielding package can be formed inexpensively and simply without changing the previous semiconductor manufacturing process. Industrial feasibility-As explained above, the present invention forms a magnetically shielded package by encapsulating an MRAM element by mixing a soft magnetic material-containing resin composite with a soft magnetic material in a resin. Thereby, it is possible to suppress an external magnetic field from a low frequency to a high frequency, and prevent a magnetic beam from entering the MRAM element, thereby improving the reliability of recording and holding. In addition, the soft magnetic body-containing resin composite used as the packaging material of the magnetic shielding package is easy to adjust. Furthermore, the use of such a packaging material allows the magnetic shielding package to be formed inexpensively and simply. [Brief description of the drawings] FIG. 1 is a schematic cross-sectional view of a magnetic shielding package of an MRAM element. FIG. 2 is a structural diagram of a second package. FIG. 3 is a structural diagram of a third package. FIG. 4 is a structural diagram of a fourth package. FIG. 5 is a structural diagram of a fifth package. FIG. 6 is an explanatory diagram of a magnetic shield package formed by a transfer mode method. FIG. 7 is an explanatory diagram of a magnetic shield package formed by a canning method. Fig. 8 is a graph showing a magnetic field intensity assumed to be applied to the MRAM element from the outside. 84020.DOC -14- 200402853 [Explanation of Symbols] 10, 10a, 10b, 10c, 10d Magnetic shield package 11 Element 12 13 13a 14 15 Wiring lead frame lead resin ball electrode 16 Pin 20 Substrate 31 Resin compound Body 32 Mould 33 Plug 41 Resin composite 42 Dispenser 43 Gate 84020.DOC-15-

Claims (1)

200402853 拾、申請專利範園： r —種磁性非揮發性記憶元件之磁屏蔽封裝體，其係抑制 外部磁場對磁性非揮發性記憶元件之影響，其特徵為： 磁性非揮發性記憶元件係使料樹脂内混合軟磁性 材料之含軟磁性體之樹脂複合體來封裝。 2. ^申請專利範圍第i項之磁性非揮發性記憶元件之磁屏 敗封裝體，其中前述磁性_發性記憶元件係在藉由前 迷含軟磁性體之樹脂複合體包園其周圍之狀態下實施封 3. 4. ^申請專㈣圍第丨項之魏㈣發性記憶元件之磁屏 ^封裝體，其中前述軟磁性材料係絕緣塗敷軟磁性鐵素 岐或軟磁性金屬或軟磁性合金者。 二種封裝材料，其係用於形成磁性非揮發性記憶元件之 磁屏蔽封裝體，其特徵為： 而成之含軟磁性體之 包含於樹脂内混合軟磁性材料 樹脂複合體。 5. 如申請專利範圍第 係絕緣塗敷軟磁性 成者。 /、之封裝材料，其中前述軟磁性材料 鐵素體或軟磁性金屬或軟磁性合金而 84020.DOC200402853 Patent application park: r — a magnetic shielding package of a magnetic non-volatile memory element, which suppresses the influence of an external magnetic field on the magnetic non-volatile memory element. Its characteristics are: A soft magnetic material-containing resin composite body is mixed with the resin to encapsulate it. 2. ^ The magnetic screen failure package of the magnetic non-volatile memory element in the scope of application for item i, wherein the aforementioned magnetic-generating memory element is located around the periphery of the resin composite package containing the soft magnetic body by the front fan. 3. 4. ^ Application of the magnetic screen ^ package for Wei ’s non-volatile memory element that specifically applies to item 丨, wherein the aforementioned soft magnetic material is insulated and coated with soft magnetic ferrite or soft magnetic metal or soft Magnetic alloy. Two kinds of packaging materials are magnetic shielding packages for forming magnetic non-volatile memory elements, and are characterized by: a soft magnetic body containing a soft magnetic material mixed with a resin and a resin composite. 5. For example, the scope of patent application is for insulation coated soft magnetic. / 、 The packaging material, in which the aforementioned soft magnetic material ferrite or soft magnetic metal or soft magnetic alloy is 84020.DOC
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JP4013140B2 (en) 2003-01-15 2007-11-28 ソニー株式会社 Magnetic memory device
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KR101855294B1 (en) 2010-06-10 2018-05-08 삼성전자주식회사 Semiconductor package
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KR20140041880A (en) 2011-09-30 2014-04-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Fe-al based alloy sputtering target
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